CN115246655A - Terbium stannate and preparation method thereof - Google Patents
Terbium stannate and preparation method thereof Download PDFInfo
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- CN115246655A CN115246655A CN202110059996.3A CN202110059996A CN115246655A CN 115246655 A CN115246655 A CN 115246655A CN 202110059996 A CN202110059996 A CN 202110059996A CN 115246655 A CN115246655 A CN 115246655A
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- 229910052771 Terbium Inorganic materials 0.000 title claims abstract description 99
- 229940071182 stannate Drugs 0.000 title claims abstract description 98
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- FWPIDFUJEMBDLS-UHFFFAOYSA-L tin(II) chloride dihydrate Chemical compound O.O.Cl[Sn]Cl FWPIDFUJEMBDLS-UHFFFAOYSA-L 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000010438 heat treatment Methods 0.000 claims abstract description 44
- 238000004528 spin coating Methods 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000005424 photoluminescence Methods 0.000 claims abstract description 16
- 150000001217 Terbium Chemical class 0.000 claims abstract description 9
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 239000002243 precursor Substances 0.000 claims abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- ULJUVCOAZNLCJZ-UHFFFAOYSA-K trichloroterbium;hexahydrate Chemical group O.O.O.O.O.O.[Cl-].[Cl-].[Cl-].[Tb+3] ULJUVCOAZNLCJZ-UHFFFAOYSA-K 0.000 claims description 34
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 12
- 125000005402 stannate group Chemical group 0.000 claims description 11
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 5
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims 16
- 239000010408 film Substances 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 2
- 239000000463 material Substances 0.000 abstract description 5
- VANCNPLBFRPCRC-UHFFFAOYSA-K Cl(=O)(=O)[O-].[Tb+3].Cl(=O)(=O)[O-].Cl(=O)(=O)[O-] Chemical compound Cl(=O)(=O)[O-].[Tb+3].Cl(=O)(=O)[O-].Cl(=O)(=O)[O-] VANCNPLBFRPCRC-UHFFFAOYSA-K 0.000 abstract 2
- 239000000243 solution Substances 0.000 description 36
- 239000010410 layer Substances 0.000 description 18
- 238000003756 stirring Methods 0.000 description 17
- 239000011259 mixed solution Substances 0.000 description 16
- 235000019441 ethanol Nutrition 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- -1 rare earth ions Chemical class 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- YJVUGDIORBKPLC-UHFFFAOYSA-N terbium(3+);trinitrate Chemical compound [Tb+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YJVUGDIORBKPLC-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G19/00—Compounds of tin
- C01G19/006—Compounds containing, besides tin, two or more other elements, with the exception of oxygen or hydrogen
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7743—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing terbium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
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Abstract
The invention relates to the field of luminescent materials, in particular to a stannic terbium chlorate and a preparation method thereof, wherein the preparation method of the stannic terbium chlorate comprises the steps of dissolving stannous chloride dihydrate and terbium salt serving as precursors in a solvent at room temperature to form a solution A; and spin-coating the solution A on a substrate to form a film, and heating to obtain the substrate-based terbium stannate film. The method has the advantages of simple preparation process, low requirement on equipment, high controllability, less thermal budget involved in the preparation process, and excellent photoluminescence performance of the product.
Description
Technical Field
The invention relates to the field of luminescent materials, in particular to terbium stannate and a preparation method thereof.
Background
SnO 2 The semiconductor is a wide-bandgap semiconductor, the forbidden band width is 3.6eV, the carrier mobility is high, the phonon energy is low, and the transmittance in visible and near-infrared bands is very high. Doping Sb or F can greatly improve SnO 2 Has a high electron concentration, and is an excellent conductive material. Currently, snO is prepared as a commercial transparent conductive material 2 The process is mature, and high-quality films can be obtained through vacuum vapor deposition. SnO 2 The solid solubility of the medium rare earth elements is high (the highest solid solubility can reach 10mol percent), and the oxygen-rich environment is favorable for the optical transition of rare earth ions. How to develop and prepareThe development of materials with photoluminescence properties is a subject to be researched.
Disclosure of Invention
The invention aims to solve the primary technical problem of providing the terbium stannate with simple process, low cost, short reaction period and strong photoluminescence performance and the preparation method thereof.
In order to solve the above technical problem, a technical solution provided by the present application is: a method for preparing terbium stannate, comprising: dissolving stannous chloride dihydrate and terbium salt serving as precursors in a solvent at room temperature to form a solution A; and spin-coating the solution A on a substrate to form a film, and heating to obtain the substrate-based terbium stannate film.
Wherein the heating temperature is 10-250 ℃.
Wherein the terbium salt is terbium chloride hexahydrate.
Wherein the mass ratio of the stannous chloride dihydrate to the terbium chloride hexahydrate is (0.1-1) to (0.0001-0.1).
Wherein the solvent comprises ethanol.
Wherein the mass volume ratio of the stannous chloride dihydrate, the terbium chloride hexahydrate and the ethanol is (0.1-1) g, (0.0001-0.1) g, (0.5-50) ml.
Wherein the substrate comprises a silicon substrate, a germanium substrate, a gallium arsenide substrate or a gallium nitride substrate.
Wherein the number of spin-coating layers is 1-10.
The application also comprises a second technical scheme: the terbium stannate is prepared by the preparation method of the terbium stannate, and comprises a terbium stannate film which can be subjected to photoluminescence in a visible waveband.
Wherein, the terbium stannate film has the luminous intensity of 3.8 multiplied by 10 at the wave band of 550nm 3 。
The invention has the beneficial effects that:
(1) According to the preparation method of the terbium stannate, the terbium stannate film is prepared by combining a sol-gel method and heating table heat treatment, expensive instruments and equipment are not needed, the terbium stannate film can be obtained through reasonable process control, and the terbium stannate has strong photoluminescence performance in a visible waveband. The method can be applied to the fields of silicon-based light sources, LED light sources, integrated circuits, display devices and the like.
(2) The preparation method of the terbium stannate film material has the advantages of cheap and easily-obtained raw materials, simple synthesis process, high controllability, low cost, short reaction period and no pollution to the environment, and the prepared terbium stannate film material has strong photoluminescence performance.
(3) The preparation method of the terbium stannate has the advantages of low reaction temperature, less thermal budget and capability of reducing energy consumption.
Drawings
FIG. 1 is a photoluminescence chart of a terbium stannate film prepared in example 1 of the present application.
FIG. 2 is a scanning electron micrograph of a terbium stannate film prepared in example 1 of the present application.
FIG. 3 is a scanning electron micrograph of a terbium stannate film prepared in example 1 of the present application.
FIG. 4 is an EDS diagram of a terbium stannate film prepared in example 1 of the present application.
Detailed Description
The following examples are presented to further illustrate the methods of the present invention and are not intended to limit the invention to these examples.
The embodiment of the application provides a preparation method of terbium stannate, which comprises the following steps: dissolving stannous chloride dihydrate and terbium salt serving as precursors in a solvent at room temperature to form a solution A; and spin-coating the solution A on a substrate to form a film, and heating to obtain the substrate-based terbium stannate film.
The preparation method of the terbium stannate is simple, sol is formed at room temperature, gel is formed by spin coating, and the terbium stannate film can be obtained by heating; the method of the embodiment of the application is simple, the raw material cost is low, the preparation period is short, the prepared film is uniform and strong, and the preparation process has no pollution to the environment. The terbium stannate prepared by the embodiment of the application has stronger photoluminescence performance in a visible waveband, and can be used for light sources, such as silicon-based light sources, LED light sources and the field of display devices.
In the embodiment of the application, the heating temperature is 10-250 ℃. According to the method, the terbium stannate film can be prepared by low-temperature heating, the required thermal budget is low, and the prepared terbium stannate film has photoluminescence performance. In the embodiment of the present application, the heating temperature may be 25 ℃, 50 ℃, 60 ℃, 80 ℃, 100 ℃, 120 ℃, 150 ℃, 180 ℃, 210 ℃ or 250 ℃ or the like.
In the embodiment of the present application, the terbium salt includes terbium chloride hexahydrate. In the embodiment of the application, the terbium salt is terbium chloride hexahydrate, so that the purity of the prepared terbium stannate is high. In other embodiments, the terbium salt may also include terbium nitrate, and the like.
In the embodiment of the application, the mass ratio of the stannous chloride dihydrate to the terbium chloride hexahydrate is (0.1-1) to (0.0001-0.1). In the embodiment of the application, the photoluminescent performance of the prepared terbium stannate chloride film is optimal by controlling the mass ratio of stannous chloride dihydrate to terbium chloride hexahydrate.
In an embodiment of the present application, the solvent comprises ethanol. The stannous chloride dihydrate and the terbium chloride hexahydrate can be dissolved in the ethanol, and the ethanol is volatile, so that the preparation time of a terbium stannate chloride film product can be shortened. In other embodiments, the solvent may also be a mixture of water and ethanol.
In the embodiment of the application, the mass volume ratio of the stannous chloride dihydrate, the terbium chloride hexahydrate and the ethanol is (0.1-1) g, (0.0001-0.1) g, (0.5-50) ml. According to the embodiment of the application, the mass volume ratio of the stannous chloride dihydrate, the terbium chloride hexahydrate and the ethanol is reasonably controlled, so that the stannous chloride dihydrate and the terbium chloride hexahydrate can be completely dispersed in the ethanol, and the terbium stannate can be prepared.
In the embodiment of the present application, the substrate is a silicon substrate, and in other embodiments, the substrate may also be a germanium substrate, a gallium arsenide substrate, or a gallium nitride substrate. The photoluminescence performance of the substrate can be improved, so that the silicon substrate-based terbium stannate film can be formed, and the silicon substrate-based terbium stannate film can be applied to the fields of silicon-based light sources, LED light sources, integrated circuits and the like.
In the embodiment of the application, the number of spin-coating layers is 1-10. In the embodiment of the application, the number of spin-coated layers is 1, 2, 3, 5, 6, 8, 10, and the like, and the thickness of the prepared film can be set as required by spin-coating solution A with different numbers of layers, and the photoluminescence performance is optimal at the thickness. In the embodiment of the application, the thickness of the terbium stannate film is 1-100nm.
The application also comprises a second technical scheme: the terbium stannate is prepared by the preparation method of the terbium stannate, and comprises a terbium stannate film which can be subjected to photoluminescence in a visible waveband. The terbium stannate film provided by the embodiment of the application can be applied to the fields of silicon-based light sources, LED light sources, display devices, integrated circuits and the like.
In the embodiment of the application, the terbium stannate film has the luminous intensity of 3.8 multiplied by 10 at a wavelength of 550nm 3 . The terbium stannate implemented by the application has extremely strong photoluminescence performance.
To facilitate understanding of the technical solutions of the present application, the following specific examples are provided.
Example 1:
a preparation method of terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of the solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating the film on a heating table at 150 ℃ to obtain the silicon substrate-based terbium stannate film.
As shown in fig. 1, which is a photoluminescence chart of the terbium stannate film prepared in this embodiment, it can be seen from fig. 1 that the prepared terbium stannate film has strong photoluminescence performance in the visible wavelength band; 550nm band, luminous intensity of 3.8 × 10 3 At 490nm wavelength band, the luminous intensity is 1.8 × 10 3 The luminous intensity is 1.45 multiplied by 10 in 590nm wave band 3 (ii) a In 628nm band, the luminous intensity is 1.2 × 10 3 . As shown in FIGS. 2 and 3, which are scanning electron micrographs of the terbium stannate film prepared in the examples of the present application, it can be seen that the prepared terbium stannate film is thinThe film has strong compactness and uniform distribution, and the particle size of the terbium stannate chloride particles is between 100nm and 800 nm. Referring to fig. 4, the EDS of the product prepared in the examples of the present application shows that the product contains the elements oxygen, tin, chlorine and terbium, which indicates that the product prepared in the examples of the present application is terbium stannate.
Example 2:
this example differs from example 1 in that the amount of terbium chloride hexahydrate in step one was changed to 0.0036g, as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0036g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of the solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating on a heating table at 150 ℃ for 10 minutes to obtain the silicon substrate-based terbium stannate film.
According to the embodiment of the application, the terbium stannate film can be formed on the silicon substrate, and the appearance and the performance of the terbium stannate film are the same as or similar to those of the embodiment 1. The method for preparing the terbium stannate film has the advantages of short time, low temperature and small heat requirement.
Example 3:
this example differs from example 1 in that the amount of ethanol in step one was changed to 20ml as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 20ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of the solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating the film on a heating table at 150 ℃ to obtain the silicon substrate-based terbium stannate film.
Example 4:
this example is different from example 1 in that the temperature of the heat stage treatment in the second step is changed to 50 ℃, and the other steps are the same as example 1, specifically as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating on a heating table at 50 ℃ to obtain the silicon substrate-based terbium stannate film.
Example 5:
the difference between this example and example 1 is that the temperature of the heat stage treatment in step two is 60 ℃, and the other steps are the same as in example 1, specifically as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating on a heating table at 60 ℃ to obtain the silicon substrate-based terbium stannate film.
Example 6:
the difference between this example and example 1 is that the temperature of the heat stage treatment in step two is 70 ℃, and the other steps are the same as in example 1, specifically as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating on a heating table at 70 ℃ to obtain the silicon substrate-based terbium stannate film.
Example 7:
this example is different from example 1 in that the temperature of the heat stage treatment in step two is changed to 80 ℃, and the other steps are the same as example 1, specifically as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating on a heating table at the temperature of 80 ℃ to obtain the silicon substrate-based terbium stannate film.
Example 8:
this example is different from example 1 in that the temperature of the heat stage treatment in step two is changed to 90 ℃, and the other steps are the same as example 1, specifically as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating on a heating table at 90 ℃ to obtain the silicon substrate-based terbium stannate film.
Example 9:
the difference between this example and example 1 is that the temperature of the heat stage treatment in step two is changed to 100 ℃, and the other steps are the same as example 1, specifically as follows:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating on a heating table at 100 ℃ to obtain the silicon substrate-based terbium stannate film.
Example 10:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating the film on a heating table at 250 ℃ for 20min to obtain the silicon substrate-based terbium stannate film.
Example 11:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of the solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating the film on a heating table at 10 ℃ for 2 hours to obtain the silicon substrate-based terbium stannate film.
Example 12:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.4516g of stannous chloride dihydrate and 0.0216g of terbium chloride hexahydrate in 15ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and step two, taking 40 mu l of solution A, preparing a film on the silicon substrate by adopting a spin coating method, spin-coating 3 layers, and heating the film on a heating table at 10 ℃ for 2 hours to obtain the silicon substrate-based terbium stannate film.
Example 13:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.1g of stannous chloride dihydrate and 0.0001g of terbium chloride hexahydrate in 0.5ml of absolute ethanol in sequence, stirring at room temperature until the stannous chloride dihydrate and the terbium chloride hexahydrate are completely dissolved, and stirring for 2 minutes to form a mixed solution A;
and secondly, taking the solution A, preparing a film on a germanium substrate by adopting a spin coating method, spin-coating 1 layer, and heating on a heating table at 50 ℃ for 1 hour to obtain the germanium substrate-based terbium stannate film.
Example 14:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 1g of stannous chloride dihydrate and 0.1g of terbium chloride hexahydrate in 50ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the solutions are completely dissolved to form a mixed solution A;
and secondly, preparing a film on the gallium arsenide substrate by taking the solution A and adopting a spin coating method, spin-coating 10 layers, and heating on a heating table at the temperature of 80 ℃ for 0.5 hour to obtain the terbium stannate film based on the gallium arsenide substrate.
Example 15:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 1g of stannous chloride dihydrate and 0.0001g of terbium chloride hexahydrate in 10ml of absolute ethanol in sequence, and stirring at room temperature until the stannous chloride dihydrate and the terbium chloride hexahydrate are completely dissolved to form a mixed solution A;
and secondly, taking the solution A, preparing a film on a gallium nitride substrate by adopting a spin coating method, spin-coating 6 layers, and heating on a heating table at the temperature of 80 ℃ for 0.5 hour to obtain the terbium stannate film based on the gallium nitride substrate.
Example 16:
the preparation method of the terbium stannate comprises the following steps:
step one, dissolving 0.1g of stannous chloride dihydrate and 0.1g of terbium chloride hexahydrate in 50ml of absolute ethyl alcohol in sequence, and stirring at room temperature until the stannous chloride dihydrate and the terbium chloride hexahydrate are completely dissolved to form a mixed solution A;
and secondly, taking the solution A, preparing a film on the gallium nitride substrate by adopting a spin coating method, spin-coating 8 layers, and heating on a heating table at the temperature of 80 ℃ for 0.2h to obtain the terbium stannate film based on the gallium nitride substrate.
While embodiments of the invention have been disclosed above, it is not intended to be limited to the uses set forth in the specification and examples. It can be applied to all kinds of fields suitable for the present invention. Additional modifications will readily occur to those skilled in the art. Therefore, the invention is not to be limited to the specific details and illustrations shown and described herein, without departing from the general concept as defined by the claims and their equivalents.
Claims (10)
1. A method for preparing terbium stannate, which is characterized by comprising the following steps:
dissolving stannous chloride dihydrate and terbium salt serving as precursors in a solvent at room temperature to form a solution A;
and spin-coating the solution A on a substrate to form a film, and heating to obtain the substrate-based terbium stannate film.
2. The method for the preparation of a terbium stannate chlorate according to claim 1, wherein the heating temperature is 10-250 ℃.
3. The method for the preparation of a terbium stannate chlorate according to claim 1, wherein said terbium salt is terbium chloride hexahydrate.
4. The method for the preparation of a terbium stannate chlorate according to claim 3, wherein the mass ratio of said stannous chloride dihydrate to said terbium chloride hexahydrate is (0.1-1) to (0.0001-0.1).
5. The method for the preparation of a terbium stannate chlorate according to claim 3, wherein said solvent comprises ethanol.
6. The method for preparing the terbium stannate chlorate according to claim 5, wherein the mass-to-volume ratio of the stannous chloride dihydrate, the terbium chloride hexahydrate and the ethanol is (0.1-1) g, (0.0001-0.1) g, (0.5-50) ml.
7. The method for preparing a terbium stannate chlorate according to claim 1, wherein the substrate comprises a silicon substrate, a germanium substrate, a gallium arsenide substrate or a gallium nitride substrate.
8. The method for preparing a terbium stannate chlorate according to claim 1, wherein the number of spin-coated layers is 1 to 10.
9. A terbium stannate prepared by the method for preparing a terbium stannate according to any one of claims 1 to 8, comprising a thin film of terbium stannate, wherein the thin film of terbium stannate exhibits photoluminescence in the visible wavelength range.
10. The terbium stannate chlorate of claim 9, wherein the terbium stannate film has a luminous intensity of 3.8 x 10 in the 550nm wavelength band 3 。
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