CN115241378A - Perovskite solar cell based on quantum tunneling effect of acrylamide insulating layer and preparation method thereof - Google Patents
Perovskite solar cell based on quantum tunneling effect of acrylamide insulating layer and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect and a preparation method thereof, wherein the perovskite solar cell comprises the following steps: the conductive glass ITO, the electron transport layer, the perovskite light active layer, the insulating layer, the hole transport layer and the electrode are arranged from bottom to top in sequence; the material of the insulating layer is acrylamide. The preparation method comprises the following steps: step 10, cleaning the ITO (indium tin oxide) conductive glass; step 20, preparing an electron transmission layer on the conductive glass ITO; step 30, preparing a perovskite photoactive layer on the electron transport layer; step 40, preparing an insulating layer on the perovskite photoactive layer; the insulating layer is made of acrylamide; step 50, preparing a hole transport layer on the insulating layer; and step 60, evaporating and plating an electrode on the hole transport layer. According to the invention, acrylamide is used as an insulating layer of the perovskite solar cell, and the separation capability of current carriers is improved, the recombination of electron holes is reduced, and the efficiency and the stability of the device are finally improved through quantum tunneling effect.
Description
Technical Field
The invention belongs to the technical field of perovskite solar cells, and particularly relates to a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect and a preparation method thereof.
Background
In recent years, new organic-inorganic hybrid lead-based Perovskite Solar Cells (PSCs) are receiving attention and have made a series of major breakthroughs. The photoelectric conversion efficiency is increased from 3.8% to 25.7% in a short time of more than ten years. However, its high toxicity, low stability and theoretical efficiency have been largely limited. Therefore, it is necessary to design a new material that can improve both the efficiency and stability of the device.
The insertion of the insulating layer in the planar heterojunction solar cell can slow down the decomposition of the perovskite thin film and play a role in preventing lead leakage; on the other hand, the perovskite layer can be prevented from being damaged by moisture permeation from the upper surface; in addition, the method can play a certain passivation role, reduce the formation of defects and inhibit the non-radiative recombination efficiency. The insertion of the insulating layer in the solar cell can be significantly improved in stability, but inevitably reduces carrier transport efficiency, thereby reducing device efficiency.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect and a preparation method thereof. The technical problem to be solved by the invention is realized by the following technical scheme:
the embodiment of the invention provides a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect, which comprises: the conductive glass ITO, the electron transport layer, the perovskite light active layer, the insulating layer, the hole transport layer and the electrode are arranged from bottom to top in sequence; the material of the insulating layer is acrylamide.
In one embodiment of the invention, the thickness of the insulating layer is 1-10nm.
The second aspect of the embodiment of the invention provides a preparation method of a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect, which comprises the following steps:
step 10, cleaning the ITO (indium tin oxide) conductive glass;
step 20, preparing an electron transmission layer on the conductive glass ITO;
step 30, preparing a perovskite photoactive layer on the electron transport layer;
step 40, preparing an insulating layer on the perovskite photoactive layer; the material of the insulating layer is acrylamide;
step 50, preparing a hole transport layer on the insulating layer;
and step 60, evaporating an electrode on the hole transport layer to complete the preparation of the solar cell according to the first aspect of the embodiment of the invention.
In an embodiment of the present invention, the specific steps of step 20 include:
step 21, snO is mixed through a spin coater 2 The quantum dots are spin-coated on the clean conductive glass ITO by a spin-coating method to form an electron transport layer, wherein the equipment rotating speed is 2000rpm-4000rpm, and the spin-coating time is 30-40s;
and 22, placing the product with the spin-coated electron transport layer in an atmospheric environment at the temperature of 100-160 ℃, and drying for 10-40min.
In one embodiment of the present invention, the specific steps of step 30 include:
step 31, spin-coating PbI with concentration of 1.3M on the electron transport layer by a spin-coating device 2 (ii) a Wherein the spin coating equipment has a rotation speed of 1500-2000rpm and a spin coating time of 25-40s, and is dried at 60-70 deg.C for 1min in a glove box filled with nitrogen;
step 32 at PbI 2 Spin coating dimethyl ether hydroiodide precursor liquid at the rotation speed of 1200-1700rpm for 30-45s to form a perovskite precursor film;
and 33, transferring the product prepared in the step 32 to an atmospheric environment with the humidity of 30-40RH%, crystallizing the perovskite precursor film on a heating table at 110-160 ℃, annealing after 5-20min, and cooling the product to room temperature to finish the preparation of the perovskite photoactive layer.
In an embodiment of the present invention, the specific steps of step 40 include:
step 41, dissolving 1mg of acrylamide in 1mL of 2-propanol solution, stirring for 2 hours at normal temperature, and dispersing the acrylamide;
42, filtering the dispersed solution by using an organic filter membrane with the diameter of 0.45 mu m to obtain an acrylamide/2-propanol solution;
step 43, diluting the acrylamide/2-propanol solution with a 2-propanol solution to form an acrylamide/2-propanol solution with the concentration of 0.01-1 mg/mL;
step 44, in a glove box filled with nitrogen, spin-coating 0.01-1mg/mL of acrylamide/2-propanol solution on the perovskite photoactive layer by using a spin coater to obtain an insulating layer; the thickness of the insulating layer is 1-10nm;
and step 45, drying the product prepared in the step 44 in a glove box at the temperature of 55-65 ℃ for 10-15min, and finishing the preparation of the insulating layer.
In an embodiment of the present invention, the specific steps of step 50 include:
step 51, dissolving 72-90mg of Spiro-OMeTAD material in 1mL of chlorobenzene, adding 20-40mg of Li-TFSI and 20-30 mu L of 4-tert-butylpyridine solution, and uniformly stirring;
step 52, further spin-coating a Spiro-OMeTAD solution on the insulating layer through spin-coating equipment to complete preparation of the hole transport layer; wherein the spin coating speed is 3000-4000rpm; the spin coating time is 25-60s.
In one embodiment of the present invention, the electrode is made of metallic silver or metallic gold.
The invention has the beneficial effects that:
according to the invention, an organic micromolecule insulating material acrylamide is used as an insulating layer (quantum tunneling layer) of an organic-inorganic hybrid perovskite solar cell. The acrylamide serving as an insulating layer of the perovskite solar cell can improve the carrier transmission capability, so that the current density is improved; electrons can be effectively prevented from passing through the layer to flow into the hole transport layer, and photo-generated holes on the perovskite valence band can be transferred into the hole transport layer through the quantum tunneling effect, so that the insertion of the insulating layer effectively reduces the recombination of the electrons and the holes, further improves the carrier transport capability, and finally improves the photoelectric conversion efficiency of the device; in addition, acrylamide has strong hydrophilic capacity, can effectively prevent water and oxygen molecules from damaging a perovskite layer, and can also slow down the degradation of perovskite and improve the stability of devices.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic diagram of calculated values of a structural formula and a forbidden band width of acrylamide in a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect, provided by an embodiment of the present invention:
fig. 2 is a schematic structural diagram of a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect according to an embodiment of the present invention;
fig. 3 is a schematic diagram of energy level matching of each layer of a perovskite solar cell based on quantum tunneling effect of an acrylamide insulating layer according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 2, a first aspect of the embodiments of the present invention provides a perovskite solar cell based on quantum tunneling effect of an acrylamide insulating layer, including: the electrode comprises a conductive glass ITO100, an electron transport layer 200, a perovskite photoactive layer 300, an insulating layer 400, a hole transport layer 500 and an electrode 600 which are arranged from bottom to top in sequence. The thickness of the insulating layer (quantum tunneling layer) 400 is 1-10nm, wherein the insulating layer serves as a quantum tunneling layer. The thickness of the insulating layer (quantum tunneling layer) 400 may be 1nm, 2nm, 5nm, or 10nm. The hole transport layer 500 employs 2,2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, i.e., spiro-OMeTAD.
In this embodiment, as shown in fig. 1 and fig. 2, the band gap of the insulating organic small molecule acrylamide is calculated through theoretical simulation, the acrylamide is used as an insulating layer (quantum tunneling layer) of the perovskite solar cell, and through quantum tunneling effect, the carrier separation capability is improved, the recombination of electron holes is reduced, a certain protection effect is provided for the perovskite layer, and finally the efficiency and the stability of the device are improved.
Specifically, the invention takes the acrylamide which is an organic micromolecule insulating material as an insulating layer (quantum tunneling layer) of the organic-inorganic hybrid perovskite solar cell, and the acrylamide has the advantages of simple preparation method, low production cost, large amount of acrylamide existing in life and production and good water solubility. Acrylamide is an insulating small molecule material, has electrophilic groups, is expected to be deposited on the surface of a perovskite thin film to form a thin and compact film, and is used as an insulating layer (quantum tunneling layer) of a perovskite solar cell, and the insulating layer mainly has the following purposes: 1. as shown in FIG. 1, acrylamide has-NH 2 Electrophilic groups, which, according to a number of literature reports, are effective in passivating Pb in perovskites 2+ The defect is reduced, so that the defect state density is reduced, the carrier transmission capability is improved, and the current density is further improved; 2. acrylamide is deposited on the surface of the perovskite layer to form an insulating thin film with the thickness of 1-10nm, as shown in figure 3, the positions of a conduction band and a valence band of the acrylamide are respectively higher and lower than those of a hole transport material Spiro-OMeTAD, the potential of the valence band of the perovskite photoactive layer 300 is lower than that of the hole transport layer 500, and therefore, holes on the valence band of the perovskite photoactive layer 300 can migrate to the valence band of the hole transport layer 500 through the quantum tunneling effect. Because a certain energy barrier exists between the conduction band of the perovskite photoactive layer 300 and the conduction band of the hole transport layer 500, electrons on the conduction band of the perovskite photoactive layer 300 are blocked by the insulating layer (quantum tunneling layer), and the electrons on the conduction band of the perovskite photoactive layer are effectively inhibited from flowing into the hole transport layer 500 through the layer. At this time, acrylamide insulationThe insertion of the layer (quantum tunneling layer) effectively reduces the recombination of electrons and holes, improves the carrier transmission capability and finally improves the photoelectric conversion efficiency of the device; 3. the acrylamide has strong hydrophilic capability, can effectively prevent water and oxygen molecules from damaging a perovskite layer, and can slow down the degradation of perovskite and improve the stability of devices.
Example two
The second aspect of the embodiment of the invention provides a preparation method of a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect, which comprises the following steps:
and step 10, cleaning the conductive glass ITO100. In particular, the amount of the solvent to be used,
step 11, ultrasonically cleaning for 10-20 minutes by using cleaning powder through an ultrasonic cleaning machine;
step 12, ultrasonically cleaning the glass substrate for 10-20 minutes by using a conductive glass cleaning solution through an ultrasonic cleaning machine;
step 13, ultrasonically cleaning the glass substrate with deionized water for 10-20 minutes by using an ultrasonic cleaning machine;
step 14, ultrasonically cleaning the glass substrate with acetone for 10-20 minutes by using an ultrasonic cleaning machine;
step 15, ultrasonically cleaning the glass substrate with isopropanol for 10-20 minutes by using an ultrasonic cleaning machine;
step 20, preparing an electron transport layer 200 on the conductive glass ITO100. The specific steps of step 20 include:
step 21, snO is mixed through a spin coater 2 The quantum dots are spin-coated on the clean conductive glass ITO100 by using a spin-coating method to form an electron transport layer 200, wherein the equipment rotating speed is 2000rpm-4000rpm, and the spin-coating time is 30-40s;
and 22, placing the product of the spin-coated electron transport layer 200 in an atmospheric environment at 100-160 ℃, and drying for 10-40min.
Step 30, preparing a perovskite photoactive layer 300 on the electron transport layer 200. The specific steps of step 30 include:
step 31, spin-coating PbI with concentration of 1.3M on the electron transport layer 200 by spin-coating equipment 2 (ii) a Wherein the spin coating equipment has a rotation speed of 1500-2000rpm, a spin coating time of 25-40s, and is charged with gasDrying at 60-70 deg.C for 1min in a nitrogen glove box;
step 32, in PbI 2 Spin-coating dimethyl ether hydroiodide precursor liquid at the rotation speed of 1200-1700rpm for 30-45s to form a perovskite precursor film;
and 33, transferring the product prepared in the step 32 to an atmospheric environment with the humidity of 30-40RH%, crystallizing the perovskite precursor film on a heating table at 110-160 ℃, annealing after 5-20min, and cooling the product to room temperature to finish the preparation of the perovskite photoactive layer 300.
Step 40, preparing an insulating layer (quantum tunneling layer) 400 on the perovskite photoactive layer 300; the material of the insulating layer (quantum tunneling layer) 400 is acrylamide. The specific steps of step 40 include:
step 41, dissolving 1mg of acrylamide in 1mL of 2-propanol solution, stirring for 2 hours at normal temperature, and dispersing the acrylamide;
42, filtering the dispersed solution by using an organic filter membrane with the diameter of 0.45 mu m to obtain an acrylamide/2-propanol solution;
step 43, diluting the acrylamide/2-propanol solution with a 2-propanol solution to form an acrylamide/2-propanol solution with the concentration of 0.01-1 mg/mL;
step 44, in a glove box filled with nitrogen, spin-coating 0.01-1mg/mL acrylamide/2-propanol solution on the perovskite photoactive layer 300 by using a spin coater to obtain an insulating layer (quantum tunneling layer) 400; the thickness of the insulating layer (quantum tunneling layer) 400 is 1-10nm; the rotating speed of the spin coater is 4000-6000rpm/s; the thickness of the insulating layer (quantum tunneling layer) 400 may be 1nm, 2nm, 5nm, or 10nm.
And step 45, drying the product prepared in the step 44 in a glove box at the temperature of 55-65 ℃ for 10-15min, and finishing the preparation of the insulating layer (quantum tunneling layer) 400.
Step 50, a hole transport layer 500 is prepared on the insulating layer (quantum tunneling layer) 400. The specific steps of step 50 include:
step 51, dissolving 72-90mg of 2,2', 7' -tetra [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene (Spiro-OMeTAD) material in 1mL of chlorobenzene, adding 20-40mg of lithium bis (trifluoromethanesulfonimide) (Li-TFSI) salt and 20-30 μ L of 4-tert-butylpyridine (tBP) solution, and uniformly stirring;
step 52, further spin-coating a Spiro-OMeTAD solution on the insulating layer (quantum tunneling layer) 400 by using spin-coating equipment to complete the preparation of the hole transport layer 500; wherein the spin coating speed is 3000-4000rpm; the spin coating time is 25-60s.
Step 60, evaporating the electrode 600 on the hole transport layer 500, and completing the preparation of the solar cell according to claim 1 or 2. The specific process for preparing electrode 600 is as follows:
step 61, scraping the product prepared in the step 52 by a knife to a width of about 2.5mm, and taking the product as a battery cathode after metal is steamed and plated;
step 62, putting the product manufactured in the step 61 into a mask plate of the evaporation electrode 600, and vertically putting the product into a position right above a tungsten filament blue boat used by a metal source;
step 63, vacuumizing the high-temperature evaporation instrument until the vacuum degree reaches 5 multiplied by 10 -3 Starting dissolving source metal (Au or Ag particles) after Pa is lower than;
step 64, by controlling the voltage, to
Depositing Au or Ag with the thickness of 80-120nm at the speed of the deposition to form an electrode 600;
step 65, the complete device plated with the electrode 600 is taken out and stored in a drying oven with humidity of 30-40%, and the preparation of the n-i-p organic-inorganic hybrid perovskite solar cell modified by the acrylamide insulating layer (quantum tunneling layer) in the first embodiment is completed (in an n-i-p formal device, the Au or Ag electrode 600 is used for collecting electrons).
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. "beneath," "under" and "beneath" a first feature includes the first feature being directly beneath and obliquely beneath the second feature, or simply indicating that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (8)
1. A perovskite solar cell based on quantum tunneling effect of an acrylamide insulating layer is characterized by comprising: the light-emitting diode comprises a conductive glass ITO (100), an electron transport layer (200), a perovskite photoactive layer (300), an insulating layer (400), a hole transport layer (500) and an electrode (600) which are sequentially arranged from bottom to top; the material of the insulating layer (400) is acrylamide.
2. The perovskite solar cell based on the quantum tunneling effect of the acrylamide insulating layer as claimed in claim 1, wherein the thickness of the insulating layer (400) is 1-10nm.
3. A preparation method of a perovskite solar cell based on an acrylamide insulating layer quantum tunneling effect is characterized by comprising the following steps:
step 10, cleaning the conductive glass ITO (100);
step 20, preparing an electron transport layer (200) on the conductive glass ITO (100);
step 30, preparing a perovskite photoactive layer (300) on the electron transport layer (200);
step 40, preparing an insulating layer (400) on the perovskite photoactive layer (300); the material of the insulating layer (400) is acrylamide;
step 50, preparing a hole transport layer (500) on the insulating layer (400);
step 60, evaporating an electrode (600) on the hole transport layer (500), and preparing the solar cell according to claim 1 or 2.
4. The preparation method of the perovskite solar cell based on the quantum tunneling effect of the acrylamide insulating layer as claimed in claim 3, wherein the specific steps of the step 20 comprise:
step 21, snO is mixed through a spin coater 2 The quantum dots are spin-coated on the clean conductive glass ITO (100) by using a spin coating method to form an electron transport layer (200), wherein the equipment rotating speed is 2000rpm-4000rpm, and the spin coating time is 30-40s;
and 22, placing the product with the spin-coated electron transport layer (200) in an atmosphere environment at 100-160 ℃, and drying for 10-40min.
5. The preparation method of the perovskite solar cell based on the quantum tunneling effect of the acrylamide insulating layer as claimed in claim 3, wherein the specific steps of the step 30 comprise:
step 31, spin-coating PbI with concentration of 1.3M on the electron transport layer (200) by a spin-coating device 2 (ii) a Wherein the spin coating equipment has a rotation speed of 1500-2000rpm and a spin coating time of 25-40s, and is dried at 60-70 deg.C for 1min in a glove box filled with nitrogen;
step 32, in PbI 2 Spin-coating dimethyl ether hydroiodide precursor liquid at the rotation speed of 1200-1700rpm for 30-45s to form a perovskite precursor film;
and 33, transferring the product prepared in the step 32 to an atmospheric environment with the humidity of 30-40RH%, crystallizing the perovskite precursor film on a heating table at 110-160 ℃, annealing after 5-20min, and cooling the product to room temperature to finish the preparation of the perovskite photoactive layer (300).
6. The preparation method of the perovskite solar cell based on the quantum tunneling effect of the acrylamide insulating layer as claimed in claim 3, wherein the specific steps of the step 40 comprise:
step 41, dissolving 1mg of acrylamide in 1mL of 2-propanol solution, stirring for 2 hours at normal temperature, and dispersing the acrylamide;
42, filtering the dispersed solution by using an organic filter membrane with the diameter of 0.45 mu m to obtain an acrylamide/2-propanol solution;
step 43, diluting the acrylamide/2-propanol solution with a 2-propanol solution to form an acrylamide/2-propanol solution with the concentration of 0.01-1 mg/mL;
step 44, in a glove box filled with nitrogen, spin-coating 0.01-1mg/mL acrylamide/2-propanol solution on the perovskite photoactive layer (300) by using a spin coater to obtain an insulating layer (400); the thickness of the insulating layer (400) is 1-10nm;
and step 45, drying the product prepared in the step 44 in a glove box at 55-65 ℃ for 10-15min, and finishing the preparation of the insulating layer (400).
7. The preparation method of the perovskite solar cell based on the quantum tunneling effect of the acrylamide insulating layer as claimed in claim 3, wherein the specific steps of the step 50 comprise:
step 51, dissolving 72-90mg of Spiro-OMeTAD material in 1mL of chlorobenzene, adding 20-40mg of Li-TFSI and 20-30 mu L of 4-tert-butylpyridine solution, and uniformly stirring;
step 52, further spin-coating a Spiro-OMeTAD solution on the insulating layer (400) through a spin coating device to finish the preparation of the hole transport layer (500); wherein the spin coating speed is 3000-4000rpm; the spin coating time is 25-60s.
8. The preparation method of the perovskite solar cell based on the quantum tunneling effect of the acrylamide insulating layer as claimed in claim 3, wherein the electrode (600) is made of metal silver or metal gold.
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| CN115623842A (en) * | 2022-12-01 | 2023-01-17 | 广东工业大学 | Perovskite solar cell and preparation method thereof |
| CN115623842B (en) * | 2022-12-01 | 2023-05-05 | 广东工业大学 | Perovskite solar cell and preparation method thereof |
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