CN115236160B - Olfactory sensation method based on field effect transistor - Google Patents
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- 230000005669 field effect Effects 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000035807 sensation Effects 0.000 title abstract description 4
- 230000000694 effects Effects 0.000 claims abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 7
- 230000000007 visual effect Effects 0.000 claims abstract description 5
- 238000004445 quantitative analysis Methods 0.000 claims abstract description 4
- 235000019645 odor Nutrition 0.000 claims description 96
- 239000007789 gas Substances 0.000 claims description 93
- 230000035943 smell Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 19
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 5
- 230000014509 gene expression Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000000862 absorption spectrum Methods 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 238000007865 diluting Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000004422 calculation algorithm Methods 0.000 abstract description 8
- 230000010354 integration Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 46
- 239000010408 film Substances 0.000 description 16
- 239000002096 quantum dot Substances 0.000 description 12
- 230000006870 function Effects 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 8
- 206010070834 Sensitisation Diseases 0.000 description 7
- 230000008313 sensitization Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 230000004069 differentiation Effects 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000008447 perception Effects 0.000 description 2
- 235000019615 sensations Nutrition 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000013075 data extraction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000006250 one-dimensional material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001953 sensory effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
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- G01N27/416—Systems
- G01N27/4162—Systems investigating the composition of gases, by the influence exerted on ionic conductivity in a liquid
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
- G06T9/00—Image coding
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
The invention provides an olfactory sensation method based on a field effect transistor, and belongs to the technical field of intelligent sensors. The method comprises the steps of constructing a field effect transistor with a gas-sensitive effect, adjusting gate voltage and collecting transistor output current data by utilizing the transistor electric adjustable attribute, carrying out interpolation processing on different smell output characteristic current data by the transistor, realizing the visual three-dimensional image coding of smell molecules, and realizing smell identification and quantitative analysis by combining an image identification algorithm. The method has high sensitivity, high specificity and high reliability, and can improve the integration and the intelligent degree of the olfactory sensor by combining the existing integrated circuit design method and wafer-level manufacturing.
Description
Technical Field
The invention belongs to the technical field of gas sensors, and particularly relates to an olfactory sensation method based on a field effect transistor.
Background
The gas sensor is a device or an apparatus which can sense smell (components and concentration) and convert the smell into a usable output signal according to a certain rule, is one of the most effective ways of monitoring various inflammable and explosive and toxic smell in real time and warning disasters, and has great demands in various fields such as environmental protection, industrial production, aerospace, military anti-terrorism, public safety and the like.
Most of the conventional gas sensors are two-terminal resistance type gas sensors, which can only collect single resistance data and have broad spectrum response to various odors and lack specificity, so that it is generally necessary to construct a gas sensor array to improve the recognition capability of specific target odors. Meanwhile, the semiconductor gas sensor based on the resistance at two ends is difficult to integrate on a large-scale die, full-feature extraction is performed through an algorithm to realize another mode of odor identification, and the method has higher accuracy rate for odor identification by selecting an adaptive algorithm model under different application taste scenes, but cannot give reasonable explanation from the aspect of materialization after the algorithm feature extraction.
The Chinese patent application with application number 201810174504.3 discloses a film field effect transistor type gas sensor and a preparation method thereof, wherein the internal composition and structure of the film field effect transistor type gas sensor, the overall process of the corresponding preparation method and parameters of each step are improved, a quantum dot film is used as a channel active layer and an odor sensitive layer, and the high-sensitivity, low-power consumption and high-selectivity gas sensor is prepared by utilizing the odor response of multiple parameters of grid bias regulation and control, so that the effect of detecting low-concentration target odor is achieved. However, it does not disclose a specific identification method.
Therefore, a new odor identification method needs to be developed to realize intelligent identification of specific target odor.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide an olfactory perception method based on a field effect transistor, which utilizes the electric adjustable attribute of the transistor to adjust the output current data of a grid voltage acquisition transistor, carries out interpolation processing on the current data with different odor output characteristics through the transistor, realizes the visual three-dimensional image coding of odor molecules, and realizes the odor identification and quantitative analysis by combining an image identification algorithm.
In order to achieve the above purpose, the invention provides an olfactory perception method based on a field effect transistor, which utilizes the electric adjustable property of the transistor to adjust the grid voltage and collect the output current data of the transistor, and carries out interpolation processing on the output characteristic current data of different odors through the transistor to realize the visual three-dimensional image coding of odor molecules, and can realize odor identification and quantitative analysis by combining image identification.
Specifically, the field effect transistor gate voltage V is adjusted based on the electrically adjustable properties of the field effect transistor G Collecting current data of output characteristic curves of different concentration smells to obtain current non-continuous data, and interpolating the current non-continuous data in the output characteristic curves of different concentration smells to generate grid voltage V of field effect transistor G Target odor concentration C GAS And field effect transistor source-drain voltage V DS The target scent concentration is identified and distinguished in an intuitive visual manner. The field effect transistor has strong expansibility (for example, complex logic operation can be constructed through the transistor), and the function is expected to be further enhanced.
Further, when the non-continuous data of the current in the output characteristic curves of the odors with different concentrations are interpolated,
if the response of the target smell shows linear change along with the concentration change, the target smell is directly processed by adopting a linear interpolation mode,
and if the response of the target smell does not show linear change along with the concentration change, fitting to obtain an equation, and then carrying out linear interpolation processing. This is because the response of the target odor as a function of the concentration of the odor is affected by the odor species and the surface-sensing receptors of the gas-sensitive thin film in the field effect transistor.
Further, the gate voltage V of the field effect transistor is regulated G The output characteristic curves of the odors with different concentrations satisfy the following functional relationship: i' D ＝f(V G ，V DS ，C GAS ) Wherein V is G Also known as gate voltage, V of field effect transistor DS Representing the source-drain voltage of the field effect transistor, C GAS Representing the target odor concentration, I' D Representing the source-drain current of the field effect transistor. The source-drain current of a field effect transistor is the current of the output characteristic curve of odors with different concentrations. I' D Also represents the source leakage current of the field effect transistor, but the field effect transistor is positioned in different environments and different conditions, and has the specific meaningDifferent.
Further, functional relation I' D ＝f(V G ，V DS ，C GAS ) The method comprises the following steps:
wherein the meaning of each function is: the meaning of each parameter is: mu (mu) n Is mobility, C ox Is an insulated gate oxide capacitor, W is the channel width, L is the channel length, V G Refers to the gate voltage, V, of a field effect transistor TH Refers to the threshold voltage of the cell at which the cell is at a threshold voltage,refers to the target odor concentration, A, B being a constant.
Further, functional relationshipThe acquisition process of (a) is as follows: source leakage current I' D Concentration of odor C with target gas The change rule of (2) accords with the following power function relation:
wherein I is D The source leakage current value of the field effect transistor gas sensor in the air is specifically:
further, for different kinds of target odors, I' D ＝f(V G ，V DS ，C GAS ) The expressions have differences, the pseudo color images can be crossed and overlapped on a certain plane of the odor space, the total absorption spectrum line distribution has obvious differences, and the target gas is identified and distinguished according to the differencesThe purpose of the taste category.
Further, the target odors of different concentrations can be obtained by mixing and diluting the target odors with the carrier gas in a certain ratio.
Further, the field effect transistor having the gas-sensitive effect is classified into a thin film channel sensitization field effect transistor (the thin film channel sensitization field effect transistor is a TFT device made of channel gas-sensitive material including nanocrystalline, zero-dimensional, one-dimensional, two-dimensional materials, etc.), a gate sensitization field effect transistor, a complementary metal oxide semiconductor device (abbreviated as CMOS device), and a high electron mobility transistor (abbreviated as HEMT).
In general, the above technical solutions conceived by the present invention have the following beneficial effects compared with the prior art:
(1) The output current is modulated by utilizing the unique grid voltage modulation effect of the three-terminal device, the field effect transistor gas sensor can construct a virtual array to amplify data, the field effect transistor can acquire enough differential data based on the grid voltage modulation effect, under the same condition, the traditional semiconductor gas sensor needs to construct a huge array to realize the acquisition of enough differential data, and the intelligent recognition of target smell can be realized by further processing the data.
(2) The field effect transistor has strong expansibility, and can be used for constructing complex logic operation, thereby being expected to be further enhanced in function.
(3) The field effect transistor with the gas-sensitive effect provided by the invention perceives smell and processes and calculates as an integrated structure, and can realize a sensory calculation integrated chip on a hardware level.
(4) By using the recognition method, the data expansion can be carried out by using the adaptive interpolation function aiming at different odors to form the virtual array image with the corresponding characteristic concentration, so that the intelligent recognition of more odors is continuously expanded, the accuracy is improved, and the purpose of expanding the application range of the intelligent recognition method is achieved.
Drawings
FIG. 1 is a schematic diagram of a field effect transistor gas sensor according to an embodiment of the present invention;
FIG. 2 shows a FET gas sensor with different concentrations of NO according to an embodiment of the present invention 2 Output characteristic of the ambient environment. Wherein, the odor concentration range is 0-5 ppm, the source-drain voltage range is 0-5V, and the grid voltage is 4V;
FIG. 3 shows a field effect transistor gas sensor at a concentration of 1ppm NO in an embodiment of the invention 2 Output characteristic of the ambient environment. Wherein, the source-drain voltage ranges from 0V to 5V, and the grid voltages are respectively 4V, 2V, 0V, -2V and-4V;
FIG. 4 shows a FET gas sensor at different NO in accordance with an embodiment of the present invention 2 Three-dimensional distribution images of current intensity under different grid voltage conditions, wherein x, y and z axes respectively represent source-drain voltage, grid voltage and odor concentration, and each pixel point of the three-dimensional image represents source-drain current I 'corresponding to specific source-drain voltage, grid voltage and odor concentration conditions' D 。
Wherein like reference numerals refer to like structures or components throughout, and wherein: 1-heavily doped silicon substrate, 2-gate insulating layer, 3-source electrode, 4-channel active layer, 5-drain electrode and 6-gate electrode.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Fig. 1 is a schematic structural diagram of a field effect transistor gas sensor provided in an embodiment of the present invention, and as can be seen from the figure, the structure of the field effect transistor-based gas sensor adopted in the odor identification is clear, the field effect transistor-based gas sensor is a bottom gate structure, a semiconductor gas-sensitive film is used as a channel active layer and an odor sensitive layer simultaneously, the field effect transistor-based gas sensor comprises a substrate 1, a gate insulating layer 2 and a channel active layer 4 from bottom to top, an active electrode 3 and a drain electrode 5 are further deposited on the channel active layer, and the active electrode 3 and the drain electrode 5 are respectively located on opposite sides of the channel active layer 4. The channel active layer is made of semiconductor gas sensitive material, and a gate electrode 6 is led out from one side of the substrate, thereby forming the field effect transistor gas sensor. The gas sensor based on the field effect transistor can adopt a channel sensitive mode or a grid sensitive mode. The field effect transistor may be a thin film field effect transistor (abbreviated as TFT), a complementary metal oxide semiconductor device (abbreviated as CMOS device), or a high electron mobility transistor (abbreviated as HEMT). The sensitization materials in the channel of the channel sensitization FET field effect transistor are 0-dimensional materials, one-dimensional materials and two-dimensional materials, and can specifically comprise metal oxide semiconductors, two-dimensional layered materials, organic semiconductors, metal organic frame materials, colloid quantum dots and the like, and can be lead sulfide (PbS) colloid quantum dot films or two-dimensional layered Black Phosphorus (BP) for example. The field effect transistor device structure is compatible with various current semiconductor gas-sensitive materials, including metal oxide semiconductor, two-dimensional layered materials, organic semiconductor, metal organic frame materials, colloid quantum dots and the like, and is completely compatible with the current mainstream silicon-based CMOS technology, so that the sensor chip design is facilitated.
The invention provides a smell identification method based on a field effect transistor gas sensor, which comprises the following steps: based on the unique electrically adjustable advantage of the field effect transistor, the output characteristic curves of different odor concentrations are further subjected to current data extraction, and the actual data acquisition is difficult to continuously perform at short intervals (such as grid voltage V G Continuously regulating and collecting corresponding output current I' D It takes a lot of time and it is difficult to achieve continuous change concentration measurement of the target odor concentration), where a pseudo color (pcolor) image can be generated by interpolating the acquired discontinuous data by using mathematical software such as Matlab (if the response of the target odor is generated to satisfy the linear change condition with its concentration, otherwise, interpolation can be performed by fitting the equation obtained, and the function relationship of the response with the change of the odor concentration is influenced by the odor type and the film surface sensing receptor), and the NO is visually displayed in a more intuitive manner 2 The concentration is distinguished, and the technical approach of acquiring the concentration information by the semiconductor gas sensor is effectively expanded.
In particular, since the FET current is adjustable with the gate voltage, a sufficient number of FETs are obtained and the FET current is providedDifferentiated characteristic data, and may be further increased by increasing the odor concentration variation factor by one data dimension, and finally may be formed by the gate voltage (V G ) Source drain voltage (V) DS ) Target odor concentration (C GAS ) Together determine the source-drain current (I 'of the field effect transistor under the action of smell' D ) I.e. having the following functional relationship I' D ＝f(V G ，V DS ，C GAS ) Wherein V is G Representing the gate voltage, V DS Representing the source drain current. In detail, I' D ＝f(V G ，V DS ，C GAS ) The functional relationship is given by the following theoretical derivation: the Sah equation satisfied by an ideal field effect transistor:
experiments were combined to obtain source-drain current I 'of a field effect transistor gas sensor in a target odor (such as NO 2)' D Concentration of odor C with target GAS The change rule of (2) accords with the following power function relation:
wherein I is D The source leakage current value of the field effect transistor gas sensor in the air is obtained; thus, I 'can be obtained' D ＝f(V G ，V DS ，C GASs ) The specific expression of (2) is:
wherein, the meaning of each parameter is: mu (mu) n Is mobility, C ox Is an insulated gate oxide capacitor, W is the channel width, L is the channel length, V G Refers to the gate voltage, V, of a field effect transistor TH Refers to the threshold voltage of the cell at which the cell is at a threshold voltage,refers to the target odor concentration, A, B being a constant.
For different kinds of target odors, f (V G ，V DS ，C GAS ) The expression is different, which is the key point of the invention for identifying the target smell by constructing a virtual array through a field effect transistor gas sensor. In particular, for different odors, although the images may cross and overlap, the images only appear on a certain plane of the odor space, and the odor is identified by analogy with optical means, and although the absorption lines of different odors overlap in a plurality of characteristic wavelengths, the total absorption line distribution has obvious difference, so that the aim of identifying the target odor type can still be achieved. Namely: as mentioned above, under the target odor atmosphere, different V can be obtained by the grid voltage modulation effect G And a transfer output curve of the lower field effect transistor gas sensor. On the basis, further, different target odor concentrations C can be obtained GAS The transfer output curve of the lower field effect transistor gas sensor can finally obtain the output current I' D Along with V G ，V DS ，C GASs Varied functional relation I' D ＝f(V G ，V DS ，C GAS ) Since the data obtained by actual test often consists of a series of discrete points and the collected data volume is limited, the original data is linearly interpolated by a mathematical processing tool such as MATLAB to complete the expansion of the data, thereby finally obtaining the continuous variation of independent variable I 'in mathematical sense' D The function distributes the image.
For a more detailed description of the method of the invention, it is further described below in connection with specific examples.
Example 1: preparation of field effect transistor gas sensor based on PbS colloid quantum dot film, and realization of NO 2 The identification of (or NO) odour may specifically comprise the steps of:
(1) A field effect transistor gas sensor is prepared. Fig. 1 shows a device structure of a gas sensor, as shown in fig. 1, the field effect transistor gas sensor with the bottom gate structure comprises a substrate 1, a gate insulating layer 2 and a channel active layer 4 from bottom to top, an active electrode 3 and a drain electrode 5 are further deposited on the channel active layer, the channel active layer is a gas-sensitive film formed by depositing PbS colloidal quantum dots through a solution method, and a gate electrode 6 is further led out of the substrate, so that the field effect transistor gas sensor is formed.
(2) Respectively at different gate voltages and different NO 2 The (or NO) odor concentration condition collects the output characteristic curve of the field effect transistor gas sensor of the PbS colloid quantum dot film.
(3) Performing linear interpolation on the original data by adopting a MATLAB (matrix laboratory) to complete the expansion of the data, thereby finally obtaining I' D Three-dimensional image continuously varying with odor concentration and field effect transistor operating voltage.
(4) Matching the obtained three-dimensional image with odor spaces of different odors in a pre-established odor characteristic recognition database to realize NO 2 (or NO) odor species identification and concentration differentiation.
Example 2: preparation of field effect transistor gas sensor based on two-dimensional layered BP (back propagation) to realize NO (nitric oxide) 2 The identification of (or NO) odour may specifically comprise the steps of:
(1) A field effect transistor gas sensor is prepared. Fig. 1 shows a device structure of a gas sensor, as shown in fig. 1, the field effect transistor gas sensor with a bottom gate structure comprises a substrate 1, a gate insulating layer 2 and a channel active layer 4 from bottom to top, an active electrode 3 and a drain electrode 5 are further deposited on the channel active layer, the channel active layer is a BP gas-sensitive film, and the BP film is transferred to a channel by adopting a mechanical stripping method. The substrate is also led with a gate electrode 6, thereby constituting a field effect transistor gas sensor.
(2) Respectively at different gate voltages and different NO 2 The (or NO) odor concentration condition captures the output characteristic of the BP film's field effect transistor gas sensor.
(3) Performing linear interpolation on the original data by adopting a MATLAB (matrix laboratory) to complete the expansion of the data, thereby finally obtaining I' D Continuous variation of operating voltage of field effect transistor with odor concentrationAnd (5) a converted three-dimensional image.
(4) Matching the obtained three-dimensional image with odor spaces of different odors in a pre-established odor characteristic recognition database to realize NO 2 (or NO) odor species identification and concentration differentiation.
Example 3: preparation of a field effect transistor gas sensor based on grid sensitivity, realization of NO 2 The identification of (or NO) odour may specifically comprise the steps of:
(1) A gate-sensitive field effect transistor gas sensor was prepared. And preparing a layer of PbS quantum dot gas-sensitive layer on the grid electrode of the field effect transistor by adopting a spin coating method, and applying a grid voltage on the PbS quantum dot sensitized layer.
(2) Respectively at different gate voltages and different NO 2 The (or NO) odor concentration condition captures the output characteristic of the field effect transistor gas sensor.
(3) Performing linear interpolation on the original data by adopting a MATLAB (matrix laboratory) to complete the expansion of the data, thereby finally obtaining I' D Three-dimensional function of continuous variation with odor concentration and field effect transistor operating voltage.
(4) Testing of different concentrations of NO 2 (or NO) source leakage current I 'with smell under different gate voltage and source leakage voltage' D Comparing the data base established by the mode identification algorithm to realize NO 2 (or NO) odor species identification and concentration differentiation.
The invention takes PbS colloid quantum dot film or two-dimensional lamellar BP as an example, and simultaneously serves as a channel active layer and a gas-sensitive film to construct a field effect transistor gas sensor, and NO can be finally realized 2 (or NO) intelligent recognition of odors. The method provided by the invention can also realize H-treatment by using other semiconductor materials as channel active layers and gas-sensitive films 2 S、NH 3 And the intelligent recognition of other target odors is realized, and the intelligent recognition capability of the odors can be further improved by optimizing the structure of the device and regulating and controlling the material of the channel active layer.
The channel sensitization mode provided by the invention can be used for constructing a field effect transistor gas sensor, and similar effects can be achieved through a grid sensitization mode.
The invention discloses a field effect transistor gas sensor constructed by adopting a PbS colloid quantum dot film or a two-dimensional layered BP, and can also be constructed by adopting semiconductor gas-sensitive materials such as a metal oxide semiconductor, a two-dimensional layered material, an organic semiconductor, a metal organic frame material, colloid quantum dots and the like.
The target odor NO mentioned in the invention 2 (or NO), according to the replacement of the semiconductor material, can also be H 2 S、NH 3 And other target odors.
FIG. 2 shows a FET gas sensor with different concentrations of NO according to an embodiment of the present invention 2 Output characteristic of the ambient environment. The odor concentration ranges from 0 ppm to 5ppm, the source-drain voltage ranges from 0V to 5V, and the grid voltage is 4V, so that the output characteristic curves of the transistors are obviously distinguished by changing the target odor concentration under the same grid voltage.
FIG. 3 shows a field effect transistor gas sensor at a concentration of 1ppm NO in an embodiment of the invention 2 Output characteristic of the ambient environment. The source-drain voltage ranges from 0V to 5V, and the grid voltages are respectively 4V, 2V, 0V, -2V and-4V, and the transistor has better grid voltage modulation effect under the same target odor concentration.
FIG. 4 shows a FET gas sensor at different NO in accordance with an embodiment of the present invention 2 The three-dimensional distribution image of the current intensity under the conditions of concentration and different grid voltages, wherein x, y and z axes respectively represent the source drain voltage, the grid voltage and the odor concentration, each pixel point of the three-dimensional image represents the source drain current corresponding to the conditions of specific source drain voltage, grid voltage and odor concentration, and the three-dimensional distribution image of the current intensity finally corresponding to a specific target odor has better specificity.
In the invention, the field effect transistor gas sensor based on the three-terminal electrical structure has the characteristic of adjustable current with grid voltage, and can obtain a large number of differentiated current signals through a single device under the same target odor concentration condition, so that the field effect transistor gas sensor has high specificity, the problem of insufficient specificity of the existing gas sensor is solved, in addition, the field effect transistor gas sensor, particularly the grid sensitized field effect transistor gas sensor, has high sensitivity, the signal to noise ratio is high, the detection precision can be improved, more importantly, the gas sensor based on the field effect transistor structure is easy for large-scale array integration in the future application level, the future application algorithm integration and edge calculation can be easy, the intelligent recognition capability of the field effect transistor gas sensor can be further improved, meanwhile, the intelligent odor recognition can be realized without complex algorithm pretreatment, and the actual detection efficiency and the detection cost can be reduced.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (8)
1. A smell sense method based on field effect transistor is characterized by that the transistor is used to regulate the grid voltage and collect the output current data of transistor, the transistor is used to interpolate the output characteristic current data of different smell to realize the visual three-dimensional image coding of smell molecules,
specifically, the field effect transistor gate voltage V is adjusted based on the electrically adjustable properties of the field effect transistor G Collecting current data of output characteristic curves of different concentration smells to obtain current non-continuous data, and interpolating the current non-continuous data in the output characteristic curves of different concentration smells to generate grid voltage V of field effect transistor G Target odor concentration C GAS And field effect transistor source-drain voltage V DS The pseudo-color image of the odor molecule can be further realized, the visualized three-dimensional image coding of the odor molecule can be further realized, and the odor identification and quantitative analysis can be realized by combining the image identification.
2. The method of claim 1, wherein when the discontinuous data of the current in the output characteristic curve of the odor with different concentrations is interpolated,
if the response of the target smell shows linear change along with the concentration change, the target smell is directly processed by adopting a linear interpolation mode,
and if the response of the target smell does not show linear change along with the concentration change, fitting to obtain an equation, and then carrying out linear interpolation processing.
3. The method of claim 2, wherein the gate voltage V of the field effect transistor is adjusted G The output characteristic curves of the odors with different concentrations satisfy the following functional relationship: i' D ＝f(V G ，V DS ，C GAS ) Wherein V is DS Representing the source-drain voltage of the field effect transistor, C GAS Representing the target odor concentration, I' D Representing the source-drain current of the field effect transistor.
4. A method of olfactory sensing based on field effect transistors according to claim 3, wherein the functional relationship I' D ＝f(V G ，V DS ，C GAS ) The method comprises the following steps:
wherein the meaning of each function is: mu (mu) n Is mobility, C ox Is an insulated gate oxide capacitor, W is the channel width, L is the channel length, V G Refers to the gate voltage, V, of a field effect transistor TH Refers to the threshold voltage of the cell at which the cell is at a threshold voltage,refers to the target odor concentration, A, B being a constant.
5. As claimed inThe method for sensing smell based on field effect transistor as recited in claim 4, wherein the functional relationship is as followsThe acquisition process of (a) is as follows:
source leakage current I 'of field effect transistor' D Concentration of odor C with target GAS The change rule of (2) accords with the following power function relation:
wherein I is D The source leakage current value of the field effect transistor gas sensor in the air is specifically:
6. the method of claim 5, wherein for different types of target odors, I' D ＝f(V G ，V DS ，C GAS ) The expressions are different, the pseudo-color images can be crossed and overlapped on a certain plane of the odor space, the total absorption spectrum line distribution is obviously different, and the target odor types are identified and distinguished according to the difference.
7. The method of claim 6, wherein the target odors of different concentrations are obtained by mixing and diluting the target odors with a carrier gas in a predetermined ratio.
8. The method of claim 7, wherein the field effect transistor with gas-sensitive effect is divided into thin film channel sensitized field effect transistor, gate sensitized field effect transistor, complementary metal oxide semiconductor device and high electron mobility transistor, and the channel gas-sensitive material comprises nanocrystalline, zero-dimensional, one-dimensional and two-dimensional materials.
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|---|---|---|---|---|
| GB1203126A (en) * | 1968-10-31 | 1970-08-26 | James Edgar Meinhard | Electronic olfactory detector |
| CN106662517A (en) * | 2014-08-29 | 2017-05-10 | 株式会社而摩比特 | Odour detection system, odour identification device, and odour identification method |
| WO2018135550A1 (en) * | 2017-01-19 | 2018-07-26 | 国立大学法人東京大学 | Odor sensor |
| CN110325849A (en) * | 2016-12-21 | 2019-10-11 | 新西兰植物与食品研究所 | Sensor device and method |
| CN111596137A (en) * | 2020-05-25 | 2020-08-28 | 上海华力集成电路制造有限公司 | Method for extracting source-drain resistance of field effect transistor |
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| US7538188B2 (en) * | 1998-04-08 | 2009-05-26 | Industrial Technology Research Institute | Method for fabricating an olfactory receptor-based biosensor |
| JP6556870B2 (en) * | 2016-01-15 | 2019-08-07 | 株式会社日立製作所 | Artificial olfactory sensing system |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1203126A (en) * | 1968-10-31 | 1970-08-26 | James Edgar Meinhard | Electronic olfactory detector |
| CN106662517A (en) * | 2014-08-29 | 2017-05-10 | 株式会社而摩比特 | Odour detection system, odour identification device, and odour identification method |
| CN110325849A (en) * | 2016-12-21 | 2019-10-11 | 新西兰植物与食品研究所 | Sensor device and method |
| WO2018135550A1 (en) * | 2017-01-19 | 2018-07-26 | 国立大学法人東京大学 | Odor sensor |
| CN111596137A (en) * | 2020-05-25 | 2020-08-28 | 上海华力集成电路制造有限公司 | Method for extracting source-drain resistance of field effect transistor |
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