CN115233193A - Thin film deposition apparatus - Google Patents
Thin film deposition apparatus Download PDFInfo
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- CN115233193A CN115233193A CN202210723916.4A CN202210723916A CN115233193A CN 115233193 A CN115233193 A CN 115233193A CN 202210723916 A CN202210723916 A CN 202210723916A CN 115233193 A CN115233193 A CN 115233193A
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- thin film
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- reaction chamber
- plasma
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
Abstract
Disclosed is a thin film deposition apparatus including: a reaction chamber; the base is arranged at the bottom of the reaction chamber and used for placing a semiconductor structure, wherein the semiconductor structure is provided with a deposition channel; the first gas inlet pipe is used for introducing a plurality of reaction gases and inert gases into the reaction chamber; the second air inlet pipe is used for introducing the plasma into the reaction chamber; wherein the plasma forms an ion doping reactant with the reaction gas; a first power supply coupled with the pedestal to provide a first voltage to the pedestal to generate a vertical electric field strength; wherein the ion doping reactant diffuses in a vertical direction of the deposition channel under a vertical electric field strength. The plasma generated by the plasma generator is doped with the reaction gas, so that the diffusion speed of the reaction gas is increased, and the uniformity of film deposition is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing process, in particular to a thin film deposition device.
Background
The increase in the memory density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of semiconductor manufacturing processes becomes smaller, the storage density of memory devices becomes higher. In order to further increase the memory density, a memory device of a three-dimensional structure (i.e., a 3D memory device) has been developed. The 3D memory device includes a plurality of memory cells stacked in a vertical direction, can increase integration in multiples on a unit area of a semiconductor structure, and can reduce cost.
The existing 3D memory device is mainly used as a nonvolatile flash memory. Two major non-volatile flash memory technologies employ NAND and NOR architectures, respectively. The read speed is slightly slower in the NAND memory device compared to the NOR memory device, but the write speed is fast, the erase operation is simple, and a smaller memory cell can be realized, thereby achieving higher memory density. Therefore, the 3D memory device adopting the NAND structure is widely used.
As the number of memory cell layers stacked in the vertical direction in the 3D memory device increases, the Aspect Ratio (AR) of the subsequent Channel pillar (Dummy Channel Hole) and Contact Hole (Contact Hole) increases sharply. When the aspect ratio of the substrate structure becomes large or the device structure becomes more complicated, it is difficult for the reaction gas to reach the bottom of the deep hole, resulting in non-uniform deposition and formation of voids inside the thin film.
In order to improve the uniformity and coverage of the thin film, the time is extended to allow the reaction gas to sufficiently diffuse. Therefore, the output efficiency of the machine is greatly affected, and the Wafer output Per Hour (Wafer Per Hour, WPH) is about 30% of that of the conventional process, thereby greatly increasing the manufacturing cost.
Disclosure of Invention
In view of the above problems, an object of the present invention is to provide a thin film deposition apparatus that improves the uniformity of thin film deposition.
According to an aspect of the present invention, there is provided a thin film deposition apparatus including: a reaction chamber;
the base is arranged at the bottom of the reaction chamber and used for placing a semiconductor structure, wherein the semiconductor structure is provided with a deposition channel; the first gas inlet pipe is used for introducing a plurality of reaction gases and inert gases into the reaction chamber; the second air inlet pipe is used for introducing the plasma into the reaction chamber; wherein the plasma forms an ion doping reactant with the reactant gas; a first power supply coupled with the pedestal to provide a first voltage to the pedestal to generate a vertical electric field strength; wherein the ion doping reactant diffuses in a vertical direction of the deposition channel under a vertical electric field strength.
Preferably, the thin film deposition apparatus further comprises: the annular electrode is arranged on the periphery of the semiconductor structure; a second power supply coupled to the ring electrode for providing a second voltage to the ring electrode to generate a horizontal electric field strength; wherein the ion doping reactant diffuses in a horizontal direction of the deposition channel under a horizontal electric field strength.
Preferably, the ring-shaped electrode includes a first electrode, a second electrode, a third electrode and a fourth electrode respectively located around the semiconductor structure and isolated from each other, and the second power supply supplies different voltages to the first electrode, the second electrode, the third electrode and the fourth electrode to generate different horizontal electric field strengths to control the diffusion direction of the ion-doped reactant.
Preferably, the deposition channel includes a plurality of first deposition channels extending along a first direction perpendicular to the semiconductor structure and a plurality of second deposition channels extending along a second direction parallel to the semiconductor structure.
Preferably, the vertical electric field strength controls diffusion of the ion doping reactant along a plurality of first deposition channels, and the horizontal electric field strength controls diffusion of the ion doping reactant along a plurality of second deposition channels.
Preferably, the thin film deposition apparatus further comprises: the cover plate is positioned at the top of the reaction chamber; the flange is positioned above the cover plate and used for fixing the first air inlet pipe and the second air inlet pipe on the cover plate; and the spray head is positioned below the cover plate, is communicated with the first air inlet pipe and the second air inlet pipe, and is respectively used for guiding the reaction gas and the plasma in different steps into the reaction chamber.
Preferably, the thin film deposition apparatus further comprises: an exhaust chamber in communication with the reaction chamber; and the exhaust device is connected with the exhaust chamber and is used for vacuumizing the reaction chamber.
Preferably, the thin film deposition apparatus further comprises: one end of the strut is fixed at the bottom end of the exhaust chamber, and the other end of the strut is connected with the lower surface of the base and used for fixing the base; and the supporting device comprises a plurality of supporting rods which penetrate through the base and are in contact with the lower surface of the semiconductor structure and are used for controlling the semiconductor structure to move or deflect.
Preferably, the thin film deposition apparatus further comprises: a plasma generator for generating plasma; and the plasma pipeline is connected with the plasma device and the second air inlet pipe and is used for guiding the plasma into the reaction chamber through the second air inlet pipe.
Preferably, the thin film deposition apparatus further comprises: a gas supply device for supplying a plurality of reaction gases and an inert gas; and the reaction gas pipelines are commonly connected to the first gas inlet pipe and used for leading multiple reaction devices and inert gases into the reaction chamber through the first gas inlet pipe.
According to the film deposition device provided by the invention, the plasma generated by the plasma generator is doped with the reaction gas, so that the diffusion speed of the reaction gas is increased, and the uniformity of film deposition is improved.
Further, a first power supply is electrically connected to the susceptor and supplies a first voltage to the susceptor to generate a vertical electric field strength at which the ion-doping reactant diffuses in a vertical direction of the deposition channel so that the ion-doping reactant can reach the bottom of the deposition channel.
Furthermore, a second power supply is applied to the annular electrode arranged on the periphery of the semiconductor structure, and the ion doping reactant diffuses in the horizontal direction, so that the reaction gas diffuses uniformly in the deposition channel, and the film in the deposition channel is deposited uniformly.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
FIG. 1 shows a schematic diagram of a prior art thin film deposition process;
FIG. 2 is a schematic structural diagram of a thin film deposition apparatus according to an embodiment of the present invention;
FIG. 3 illustrates a top view of a ring electrode provided by an embodiment of the present invention;
fig. 4 shows a schematic view of the thin film deposition method of the present invention.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not drawn to scale.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
The term "above" as used herein refers to being above the plane of the substrate, and may refer to direct contact between materials or spaced apart materials.
In the present application, the term "semiconductor structure" refers to the general term for the entire semiconductor structure formed in the various steps of manufacturing a memory device, including all layers or regions that have been formed. In the following description, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the device are described to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details.
The present invention may be embodied in various forms, some examples of which are described below.
Referring to fig. 1, the related art thin film deposition method includes: a semiconductor structure having a deposition channel 102 is placed on a susceptor 20 of a reaction chamber, the semiconductor structure including, for example, a substrate 101 and a structural layer 120 on a surface of the substrate. In the present embodiment, the substrate 101 is a silicon substrate, and the deposition channel 102 passes through the structural layer 120 and exposes the surface of the substrate 101. The reaction chamber 10 and the exhaust chamber 30 are then evacuated using the exhaust device 31, and the semiconductor structure is heated to a predetermined temperature using the heater 24. Then, film deposition is started, for example, by introducing a plurality of reaction gases and an inert gas simultaneously through the reaction gas lines 51 and 52. However, the reaction gas does not easily diffuse to the bottom of the deposition channel 102, resulting in uneven filling of the deposition channel 102 and formation of voids inside the thin film formed by deposition.
Fig. 2 is a schematic structural diagram of a thin film deposition apparatus according to an embodiment of the present invention. Referring to fig. 2, the thin film deposition apparatus 100 includes a reaction chamber 10, a susceptor 20, an exhaust chamber 30, a first power supply 25, and a ring electrode 70.
Wherein the reaction chamber 10 and the exhaust chamber 30 communicate with each other, and an inner space is formed by sealing an upper open end by the cover plate 11. An access passage of the semiconductor structure is formed at the side wall opening of the reaction chamber 10, and the access passage is opened or closed by a shutter 14. A flange 12 is provided above the cover plate 11 for fixing the first and second inlet pipes 15 and 16 to the cover plate 11. A head 13 is provided below the cover plate 11. The first and second gas inlet pipes 15 and 16 are communicated with the showerhead 13, and are used to introduce the reaction gas and the plasma of different steps into the inner space of the reaction chamber 10, respectively. The plasma and the reactive gases of the different steps form ion doping reactants of the different steps. The ion doping reactant may be an ion having a certain charge, such as a positive ion or a negative ion, which is diffused in a direction of an electric field strength under the electric field strength.
The side wall of the exhaust chamber 30 is connected to an exhaust device 31. The exhaust device 31 is used to evacuate the internal space of the reaction chamber 10, and is, for example, a vacuum pump.
A susceptor 20 is disposed in an inner space of the reaction chamber 10. The support column 21 has one end fixed to the bottom end of the exhaust chamber 30 and the other end connected to the lower surface of the base 20, thereby fixing the base 20. The guide ring 23 is disposed at the periphery of the upper surface of the susceptor 20 for guiding the semiconductor structure 40 to be placed above the upper surface of the susceptor 20. The support means 22 of the semiconductor structure 40 comprises a plurality of support rods penetrating the susceptor 20 and contacting the lower surface of the semiconductor structure 40. The supporting device 22 can move up and down under the driving of a driving device (not shown), so as to move or deflect the semiconductor structure 40, and adjust the height position and the horizontal state of the semiconductor structure 40 in the inner space of the reaction chamber 10. The base 20 is coupled to a first power supply 25, i.e., the first power supply 25 is electrically connected to the base, the first power supply 25 providing a first voltage to the base to generate a vertical electric field strength. The magnitude of the first voltage can control the magnitude of the vertical electric field strength. The ion doping reactant is diffused in a vertical direction of the deposition channel under a vertical electric field strength so that the ion doping reactant can reach the bottom of the deposition channel. The first power supply 25 is, for example, a radio frequency power supply RF, but is not limited thereto.
A ring electrode 70 is disposed around the base 20, for example, around the semiconductor structure 40. The ring electrode 70 is coupled to a second power supply 71, i.e. the second power supply is electrically connected to the ring electrode 70, the second power supply 71 being adapted to provide a second voltage to the ring electrode 70 to generate a horizontal electric field strength. Wherein, the magnitude of the second voltage can control the magnitude and direction of the horizontal electric field intensity. The ion doping reactant diffuses in a horizontal direction of the deposition channel under a horizontal electric field strength. The second power supply 71 is, for example, a direct current power supply DC, but is not limited thereto.
Referring to fig. 3, the ring electrode 70 includes a first electrode 70a, a second electrode 70b, a third electrode 70c and a fourth electrode 70d respectively located around the semiconductor structure and isolated from each other, and the second power source 71 provides different voltages to the first electrode 70a, the second electrode 70b, the third electrode 70c and the fourth electrode 70d to generate different horizontal electric field strengths to control the diffusion direction of the ion doping reactant. The first electrode 70a, the second electrode 70b, the third electrode 70c, and the fourth electrode 70d are, for example, stripe-shaped electrodes.
Referring to fig. 4, the deposition channel 102 includes a plurality of first deposition channels extending along a first direction perpendicular to the semiconductor structure and a plurality of second deposition channels extending along a second direction parallel to the semiconductor structure. The vertical electric field strength controls the diffusion of the ion doping reactant along a plurality of first deposition channels, and the horizontal electric field strength controls the diffusion of the ion doping reactant along a plurality of second deposition channels.
In this embodiment, the plasma converts the reaction gas into plasma to form an ion-doped reactant, which can accelerate the chemical reaction rate and make the reaction more uniform.
The annular electrode can control the diffusion of ion doping reactant in the horizontal direction, so that the reaction gas can be uniformly diffused in the deposition channel, and the film deposition in the deposition channel is uniform.
The gas supply device 50 of the thin film deposition apparatus includes at least one reaction gas pipe 51 commonly connected to the first gas inlet pipe 15.
The thin film deposition apparatus further includes a plasma unit 60, and a plasma pipe 61 connected to the second gas inlet pipe 16. The plasma generator 60 generates plasma and introduces the generated plasma into the reaction chamber through the plasma pipe 61, the gas inlet pipe 16 and the showerhead 13. The reactant gas and the plasma form a plasma doping reactant within the reaction chamber.
As an example of depositing a titanium nitride film, the reaction gas is titanium tetrakis (dimethylamino) titanium (TDMAT: ti [ N (CH) ] 3 ) 2 ] 4 ) And nitrogen (N2), wherein TDMAT gas is firstly introduced, then N2 is introduced, the nitrogen is in a plasma state, the two reaction gases react to generate a titanium nitride film and hydrocarbon, and the reaction formula is TDMAT + N2 plasma->TiN + hydrocarbons. The ion doping reactant can be uniformly diffused under the vertical electric field intensity and the horizontal electric field intensity formed by the first power supply and the second power supply.
According to the film deposition device provided by the invention, the plasma generated by the plasma generator is doped with the reaction gas, so that the diffusion speed of the reaction gas is increased, and the uniformity of film deposition is improved.
Further, a first power supply is electrically connected to the susceptor and supplies a first voltage to the susceptor to generate a vertical electric field strength under which the ion-doping reactant diffuses in a vertical direction of the deposition channel so that the ion-doping reactant can reach the bottom of the deposition channel.
Furthermore, a second power supply is applied to the annular electrode arranged on the periphery of the semiconductor structure, and the ion doping reactant diffuses in the horizontal direction, so that the reaction gas diffuses uniformly in the deposition channel, and the film in the deposition channel is deposited uniformly.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. Further, although the embodiments are described separately above, this does not mean that the measures in the respective embodiments cannot be used advantageously in combination.
The embodiments of the present invention have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the invention, and these alternatives and modifications are intended to fall within the scope of the invention.
Claims (10)
1. A thin film deposition apparatus, comprising:
a reaction chamber;
the base is arranged at the bottom of the reaction chamber and used for placing a semiconductor structure, wherein the semiconductor structure is provided with a deposition channel;
the first gas inlet pipe is used for introducing a plurality of reaction gases and inert gases into the reaction chamber;
the second air inlet pipe is used for introducing the plasma into the reaction chamber; wherein the plasma forms an ion doping reactant with the reaction gas;
a first power supply coupled with the pedestal to provide a first voltage to the pedestal to generate a vertical electric field strength;
wherein the ion doping reactant diffuses in a vertical direction of the deposition channel under a vertical electric field strength.
2. The thin film deposition apparatus according to claim 1, further comprising: the annular electrode is arranged around the semiconductor structure;
a second power supply coupled to the ring electrode for providing a second voltage to the ring electrode to generate a horizontal electric field strength;
wherein the ion doping reactant diffuses in a horizontal direction of the deposition channel under a horizontal electric field strength.
3. The thin film deposition apparatus according to claim 2, wherein the ring-shaped electrodes comprise a first electrode, a second electrode, a third electrode and a fourth electrode respectively located around the semiconductor structure and isolated from each other, and the second power supply supplies different voltages to the first electrode, the second electrode, the third electrode and the fourth electrode to generate different horizontal electric field strengths so as to control the diffusion direction of the ion doping reactant.
4. The thin film deposition apparatus of claim 3, wherein the deposition channel comprises a first plurality of deposition channels extending in a first direction perpendicular to the semiconductor structure and a second plurality of deposition channels extending in a second direction parallel to the semiconductor structure.
5. The thin film deposition apparatus of claim 4, wherein the vertical electric field strength controls diffusion of the ion-doped reactant along a plurality of first deposition channels, and the horizontal electric field strength controls diffusion of the ion-doped reactant along a plurality of second deposition channels.
6. The thin film deposition apparatus according to claim 1, further comprising:
a cover plate positioned at the top of the reaction chamber;
the flange is positioned above the cover plate and used for fixing the first air inlet pipe and the second air inlet pipe on the cover plate;
and the spray head is positioned below the cover plate, is communicated with the first air inlet pipe and the second air inlet pipe, and is respectively used for guiding the reaction gas and the plasma in different steps into the reaction chamber.
7. The thin film deposition apparatus according to claim 1, further comprising:
an exhaust chamber in communication with the reaction chamber;
and the exhaust device is connected with the exhaust chamber and is used for vacuumizing the reaction chamber.
8. The thin film deposition apparatus according to claim 7, further comprising:
one end of the strut is fixed at the bottom end of the exhaust chamber, and the other end of the strut is connected with the lower surface of the base and used for fixing the base;
and the supporting device comprises a plurality of supporting rods which penetrate through the base and are in contact with the lower surface of the semiconductor structure and are used for controlling the semiconductor structure to move or deflect.
9. The thin film deposition apparatus according to claim 1, further comprising:
a plasma generator for generating plasma;
and the plasma pipeline is connected with the plasma device and the second air inlet pipe and is used for guiding the plasma into the reaction chamber through the second air inlet pipe.
10. The thin film deposition apparatus according to claim 1, further comprising:
a gas supply device for supplying a plurality of reaction gases and an inert gas;
and the reaction gas pipelines are connected to the first gas inlet pipe together and used for leading multiple reaction devices and inert gases into the reaction chamber through the first gas inlet pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210723916.4A CN115233193A (en) | 2022-06-23 | 2022-06-23 | Thin film deposition apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202210723916.4A CN115233193A (en) | 2022-06-23 | 2022-06-23 | Thin film deposition apparatus |
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| CN115233193A true CN115233193A (en) | 2022-10-25 |
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| CN202210723916.4A Pending CN115233193A (en) | 2022-06-23 | 2022-06-23 | Thin film deposition apparatus |
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| US20110039402A1 (en) * | 2009-08-07 | 2011-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film and thin film transistor |
| CN106756885A (en) * | 2016-12-27 | 2017-05-31 | 中国科学院微电子研究所 | A kind of remote plasma atomic layer deposition system of variable electric field modulation |
| CN111211048A (en) * | 2020-01-16 | 2020-05-29 | 长江存储科技有限责任公司 | 3D memory device and atomic layer deposition method of adhesion film |
| CN211897109U (en) * | 2019-12-04 | 2020-11-10 | 江苏菲沃泰纳米科技有限公司 | Film coating equipment |
| CN213951340U (en) * | 2020-11-30 | 2021-08-13 | 长江存储科技有限责任公司 | Plasma chemical vapor deposition device |
| KR20210117070A (en) * | 2020-03-18 | 2021-09-28 | (주)아이작리서치 | Plasma atomic layer deposition apparatus and horizontal guide type electrode |
-
2022
- 2022-06-23 CN CN202210723916.4A patent/CN115233193A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110039402A1 (en) * | 2009-08-07 | 2011-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film and thin film transistor |
| CN106756885A (en) * | 2016-12-27 | 2017-05-31 | 中国科学院微电子研究所 | A kind of remote plasma atomic layer deposition system of variable electric field modulation |
| CN211897109U (en) * | 2019-12-04 | 2020-11-10 | 江苏菲沃泰纳米科技有限公司 | Film coating equipment |
| CN111211048A (en) * | 2020-01-16 | 2020-05-29 | 长江存储科技有限责任公司 | 3D memory device and atomic layer deposition method of adhesion film |
| KR20210117070A (en) * | 2020-03-18 | 2021-09-28 | (주)아이작리서치 | Plasma atomic layer deposition apparatus and horizontal guide type electrode |
| CN213951340U (en) * | 2020-11-30 | 2021-08-13 | 长江存储科技有限责任公司 | Plasma chemical vapor deposition device |
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