CN115223911A - Chip transfer substrate, transfer device and chip transfer method - Google Patents

Chip transfer substrate, transfer device and chip transfer method Download PDF

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Publication number
CN115223911A
CN115223911A CN202110426192.2A CN202110426192A CN115223911A CN 115223911 A CN115223911 A CN 115223911A CN 202110426192 A CN202110426192 A CN 202110426192A CN 115223911 A CN115223911 A CN 115223911A
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China
Prior art keywords
chip
transferred
photosensitive adhesive
photosensitive
transfer substrate
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CN202110426192.2A
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Chinese (zh)
Inventor
李蒙蒙
盛翠翠
董小彪
葛泳
王程功
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Chengdu Vistar Optoelectronics Co Ltd
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Chengdu Vistar Optoelectronics Co Ltd
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Priority to CN202110426192.2A priority Critical patent/CN115223911A/en
Publication of CN115223911A publication Critical patent/CN115223911A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67736—Loading to or unloading from a conveyor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)

Abstract

The embodiment of the invention discloses a chip transfer substrate, a transfer device and a chip transfer method, wherein the chip transfer substrate comprises a transfer substrate and a glue layer positioned on the transfer substrate, the glue layer comprises photosensitive glue units arranged in an array manner, and a space is reserved between every two adjacent photosensitive glue units; the photosensitive adhesive unit is used for adhering a corresponding chip to be transferred in the chip array to be transferred to the target substrate when the photosensitive adhesive unit is irradiated by the light source; wherein each photosensitive adhesive unit corresponds to at least one chip to be transferred. Because the distance exists between the adjacent photosensitive adhesive units, the phenomenon of adhesive material gasification or carbonization caused by the absorption of illumination energy can not occur at the distance position between the adjacent photosensitive adhesive units in the process of transferring the chip, thereby being beneficial to improving the transfer yield of the chip to be transferred. In addition, when the chip to be transferred is subjected to single-point repair, residual glue cannot be formed around the chip to be transferred due to the fact that photosensitive glue does not exist at the distance position between the adjacent photosensitive glue units, and the single-point repair yield is improved.

Description

Chip transfer substrate, transfer device and chip transfer method
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a chip transfer substrate, a chip transfer device and a chip transfer method.
Background
Micro Light Emitting diodes (Micro LEDs) have the advantages of high brightness, long lifetime, fast response speed, high contrast, etc., and display devices using Micro LEDs have become a new generation of display technology.
At present, a batch transfer technology is a key technology for preparing a Micro LED display device, colloid is generally adopted to transfer the Micro LED in the prior art, but the colloid is easily carbonized in the transfer process, the phenomenon of residual glue is easily generated around the Micro LED, and the transfer yield of the Micro LED is seriously influenced.
Disclosure of Invention
The embodiment of the invention provides a chip transfer substrate, a transfer device and a chip transfer method, which are used for improving the yield of chips in the transfer process.
In a first aspect, an embodiment of the present invention provides a chip transfer substrate, including:
a transfer substrate;
the adhesive layer is positioned on the transfer substrate and comprises a plurality of photosensitive adhesive units which are arranged in an array manner, and a space is reserved between every two adjacent photosensitive adhesive units; the photosensitive adhesive unit is used for adhering a corresponding chip to be transferred in the chip array to be transferred to a target substrate when the photosensitive adhesive unit is irradiated by a light source;
wherein each photosensitive adhesive unit corresponds to at least one chip to be transferred.
Optionally, each photosensitive adhesive unit corresponds to one chip to be transferred.
Optionally, the shape of the photosensitive adhesive unit is the same as that of the chip to be transferred, and the size of the photosensitive adhesive unit is equal to that of the chip to be transferred.
Optionally, each photosensitive adhesive unit corresponds to a plurality of chips to be transferred;
preferably, the shapes of the photosensitive adhesive units are the same as the shapes of the areas where the corresponding chips to be transferred are located, and the sizes of the photosensitive adhesive units are equal; the area where the chips to be transferred are located comprises the position where the chips to be transferred are located and the distance position between the chips to be transferred and the adjacent chips to be transferred in the chips to be transferred.
Optionally, the size of the chip to be transferred is less than or equal to 100 micrometers.
Optionally, the photosensitive adhesive further comprises a non-photosensitive adhesive, and the non-photosensitive adhesive is at least arranged between part of adjacent photosensitive adhesive units.
Optionally, the non-photosensitive glue is disposed around the photosensitive glue unit, and the photosensitive glue unit and the non-photosensitive glue are of an integrated structure.
In a second aspect, an embodiment of the present invention further provides a chip transfer apparatus, where the chip transfer apparatus includes:
the light source is used for providing light rays with preset wavelengths;
the chip transfer substrate comprises a transfer substrate and a glue layer positioned on the transfer substrate, wherein the glue layer comprises a plurality of photosensitive glue units which are arranged in an array manner, and a space is reserved between every two adjacent photosensitive glue units; the photosensitive adhesive unit is used for adhering a corresponding chip to be transferred in the chip array to be transferred to the target substrate when the photosensitive adhesive unit is irradiated by the light source.
In a third aspect, an embodiment of the present invention further provides a chip transfer method, including:
providing a chip transfer substrate, wherein the chip transfer substrate comprises a transfer substrate and a glue layer positioned on the transfer substrate, the glue layer comprises a plurality of photosensitive glue units arranged in an array, and a space is reserved between every two adjacent photosensitive glue units;
providing a bearing substrate, wherein a chip array to be transferred is arranged on the bearing substrate, and the photosensitive adhesive unit and the chip array to be transferred are aligned;
providing a light source, wherein the light source is used for providing light rays with preset wavelengths;
and providing a target substrate, and irradiating the photosensitive adhesive unit through the light source to adhere a corresponding chip to be transferred in the chip array to be transferred to the target substrate.
Optionally, the providing a transfer substrate comprises:
providing a transfer substrate, and forming a whole continuous glue layer on the transfer substrate;
and patterning the adhesive layer to form a set pattern at the position of the adhesive layer for forming the photosensitive adhesive unit, and filling a photosensitive material into the set pattern to form the photosensitive adhesive unit.
The embodiment of the invention provides a chip transfer substrate, a transfer device and a chip transfer method. The adhesive layer comprises a plurality of photosensitive adhesive units arranged in an array, each photosensitive adhesive unit at least corresponds to one chip to be transferred, and a space exists between every two adjacent photosensitive adhesive units. Because there is the interval between the photosensitive unit of gluing adjacent for the interval position does not have photosensitive glue, treats that the chip that shifts corresponds the setting with photosensitive unit of gluing, consequently at the in-process that shifts the chip, and the interval position between the adjacent photosensitive unit of gluing can not produce the phenomenon of gluing material gasification or carbonization, thereby is favorable to improving the transfer yield of treating the chip. In addition, because of the absence of photosensitive adhesive at the spacing position between the adjacent photosensitive adhesive units, when the chip to be transferred is subjected to a single-point repairing process and the chip is irradiated by laser to transfer the substrate, residual adhesive is not formed around the chip to be transferred, and the single-point repairing yield is improved.
Drawings
Fig. 1 is a top view structural diagram of a chip transfer substrate according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a chip transfer substrate according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a chip transfer process according to an embodiment of the present invention;
fig. 4 is a top view structural diagram of another chip transfer substrate according to an embodiment of the present invention;
fig. 5 is a schematic cross-sectional structure diagram of a chip transfer substrate corresponding to another chip transfer process provided in an embodiment of the present invention;
fig. 6 is a schematic top view of another chip transfer substrate according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a chip transfer apparatus according to an embodiment of the present invention;
fig. 8 is a flowchart of a chip transfer method according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of another chip transfer substrate according to an embodiment of the present invention;
FIG. 10 is a schematic diagram illustrating a process of aligning a photosensitive adhesive unit with a chip to be transferred according to an embodiment of the present invention;
FIG. 11 is a schematic view illustrating a process of adhering a corresponding chip to be transferred to a photosensitive adhesive unit according to an embodiment of the present invention;
fig. 12 is a schematic view illustrating a process of transferring a chip to be transferred onto a target substrate according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As described in the background, in the prior art, laser light is generally used to irradiate a photosensitive adhesive to adhere or release LED chips during batch transfer of the LED chips. In the transfer process, due to the fact that the energy absorbed by the photosensitive adhesive at the positions of the LED chips is different from that absorbed by the photosensitive adhesive at the positions of the LED chips, when the power of laser is too large, the positions shielded by the LED chips are not arranged, the energy absorbed by the photosensitive adhesive is too large, the photosensitive adhesive is gasified in a large area, or the photosensitive adhesive between the adjacent LED chips is carbonized, and the transfer yield of the LED chips is seriously influenced. When single-point repair is performed, the photosensitive adhesive at the positions of the LED chip and the LED chip is not used for absorbing different energy, so that the phenomenon of adhesive residue around the LED chip is easily caused, and the repair yield is influenced.
In view of the above problems, embodiments of the present invention provide a chip transfer substrate, which can improve the yield of LED chips in the transfer process. Fig. 1 is a top structure view of a chip transfer substrate according to an embodiment of the present invention, and fig. 2 is a cross-sectional view of the chip transfer substrate according to the embodiment of the present invention, wherein fig. 2 may be the cross-sectional view of fig. 1 taken along a section line AA'; fig. 3 is a schematic diagram of a chip transfer process according to an embodiment of the present invention. Referring to fig. 1 to 3, a chip transfer substrate provided by an embodiment of the present invention includes: a transfer substrate 10; the adhesive layer 20 is positioned on the transfer substrate 10, the adhesive layer 20 comprises a plurality of photosensitive adhesive units 210 which are arranged in an array, and a space exists between every two adjacent photosensitive adhesive units 210; the photosensitive adhesive unit 210 is used for adhering the corresponding chip 40 to be transferred in the chip array to be transferred to the target substrate 50 when being irradiated by the light source; wherein each photosensitive adhesive unit 210 corresponds to at least one chip 40 to be transferred.
Specifically, the transfer substrate 10 may be a glass substrate for supporting the adhesive layer 20 disposed thereon. The glue layer 20 includes a plurality of photosensitive glue cells 210, and the photosensitive glue cells 210 are arranged in an array on the transfer substrate 10. The chip array to be transferred is disposed on the carrier substrate 30, and the chip array to be transferred includes the chip 40 to be transferred, wherein the carrier substrate 30 may be a sapphire substrate or a gaas substrate, and the chip 40 to be transferred may be a Micro LED. Each photosensitive adhesive unit 210 disposed on the transfer substrate 10 corresponds to at least one chip 40 to be transferred, that is, a vertical projection of each photosensitive adhesive unit 210 on the transfer substrate 10 covers at least one chip 40 to be transferred. The photosensitive adhesive unit 210 can be made of photosensitive polymer materials such as polyimide, and when the photosensitive adhesive unit 210 is irradiated by light with a first wavelength emitted by a light source, the light can be rapidly cured to generate certain viscosity, so that a corresponding chip 40 to be transferred can be adhered; wherein the light of the first wavelength may be ultraviolet light.
In this embodiment, there is a space between adjacent photosensitive adhesive units 210, and the space can be set according to the actual requirement of the product. In order to ensure the transfer reliability of the chip 40 to be transferred, the chip 40 to be transferred and the photosensitive adhesive unit 210 need to be precisely aligned, so that the chip 40 to be transferred and the photosensitive adhesive unit 210 are attached. When the photosensitive adhesive unit 210 is irradiated by the ultraviolet light source, the photosensitive adhesive unit 210 is rapidly cured and adheres to the corresponding chip 40 to be transferred, and the chip transfer substrate adhered to the chip 40 to be transferred is irradiated by light of the second wavelength emitted by the light source, so that the photosensitive adhesive unit 210 loses viscosity to transfer the chip 40 to be transferred to the target substrate 50, thereby realizing batch transfer of the LED chips, wherein the light of the second wavelength may be infrared light. The chips 40 to be transferred are arranged in the array of the chips to be transferred in an array form, when the chips 40 to be transferred are aligned with the transfer substrate, the photosensitive adhesive units 210 are only arranged at the positions of the chips 40 to be transferred, and the photosensitive adhesive units 210 are not arranged at the positions without the chips 40 to be transferred, so that when the transfer substrate is irradiated by a light source, the photosensitive adhesive units 40 shielded by the chips 40 to be transferred are cured to generate viscosity, and at the intervals between the adjacent photosensitive adhesive units 210, because the photosensitive adhesive is not arranged, the phenomena of gasification or carbonization cannot occur at the intervals due to the absorption of the energy of the light source.
In addition, when the chip 40 to be transferred adhered to the chip transfer substrate is damaged and laser single-point repair is performed, light rays with the second wavelength emitted by the light source irradiate the corresponding photosensitive adhesive unit 210, so that the photosensitive adhesive unit 210 loses viscosity, and the chip 40 to be transferred at the corresponding position on the chip transfer substrate falls off, so that a new chip 40 to be transferred can be adhered again. When the chip 40 to be transferred which needs to be repaired is subjected to laser irradiation, because the position which is not shielded by the chip 40 to be transferred (namely the distance position between the adjacent photosensitive adhesive units 40) does not have photosensitive adhesive, when the chip transferring substrate is irradiated by the laser, the residual adhesive does not exist around the chip 40 to be transferred, and the yield of laser single-point repair cannot be influenced.
In other embodiments, two light sources may be included, one light source for emitting light of the first wavelength to cure the photosensitive adhesive unit 210; another light source is used to emit light of a second wavelength to make the photosensitive adhesive unit 210 lose its adhesiveness.
The embodiment of the invention provides a chip transfer substrate which comprises a transfer substrate and an adhesive layer positioned on the transfer substrate. The adhesive layer comprises a plurality of photosensitive adhesive units arranged in an array, each photosensitive adhesive unit at least corresponds to one chip to be transferred, and a space exists between every two adjacent photosensitive adhesive units. Because there is the interval between the photosensitive unit of gluing adjacent for the interval position does not have photosensitive glue, treats that the chip that shifts corresponds the setting with photosensitive unit of gluing, consequently at the in-process that shifts the chip, and the interval position between the adjacent photosensitive unit of gluing can not produce the phenomenon of gluing material gasification or carbonization, thereby is favorable to improving the transfer yield of treating the chip. In addition, when the chip to be transferred is subjected to single-point repair, residual glue cannot be formed around the chip to be transferred due to the fact that photosensitive glue does not exist at the distance position between the adjacent photosensitive glue units, and the single-point repair yield is improved.
It should be noted that the single-point repair mentioned in the embodiment of the present invention may also be performed on the chip transferred onto the target substrate 50, and the target substrate 50 is also provided with the glue layer provided in the embodiment of the present invention.
With continued reference to fig. 3, the structure of the chip transfer substrate shown in fig. 3 is a case where each photosensitive adhesive unit 210 corresponds to one chip 40 to be transferred. In the present embodiment, the photosensitive adhesive unit 210 has the same shape and size as the chip 40 to be transferred. After realizing photosensitive glue unit 210 and waiting to shift accurate counterpoint of chip 40, photosensitive glue unit 210 can just laminate and wait to shift chip 40, waits to shift around the chip 40 and adjacent waiting to shift all not have photosensitive glue between the chip 40, consequently guaranteeing under the firm circumstances of adhesion, can improve adjacent waiting to shift the phenomenon that the material gasification or carbonization appear gluing between the chip 40. Preferably, the distance between the adjacent photosensitive adhesive units 210 is equal to the distance between the corresponding adjacent chips 40 to be transferred, and the distance is d, so that the photosensitive adhesive units 210 and the chips 40 to be transferred can be aligned accurately, and the process difficulty of patterning the photosensitive adhesive units 210 can be reduced. Meanwhile, the distance between any adjacent photosensitive adhesive units 210 can also be equal, so that the alignment precision of the photosensitive adhesive units 210 and the corresponding chips 40 to be transferred can be improved.
As another optional implementation provided by the embodiment of the present invention, each photosensitive adhesive unit 210 may further correspond to a plurality of chips 40 to be transferred. Fig. 4 is a top view structural diagram of another chip transfer substrate provided in an embodiment of the present invention, and fig. 5 is a schematic cross-sectional structure diagram of the chip transfer substrate corresponding to another chip transfer process provided in the embodiment of the present invention, referring to fig. 4 and fig. 5, each photosensitive adhesive unit 210 corresponds to a plurality of chips 40 to be transferred; preferably, the shape of the photosensitive adhesive unit 210 is the same as the shape of the corresponding area where the plurality of chips 40 to be transferred are located, and the size is equal; the area where the plurality of chips 40 to be transferred are located includes the location where the plurality of chips 40 to be transferred are located and the pitch location of the adjacent chips 40 to be transferred among the plurality of chips 40 to be transferred.
Specifically, in the embodiment, the to-be-transferred chips 40 are micro LED chips, the size of which is less than or equal to 100 micrometers, and in order to simplify the process difficulty, the size of the photosensitive adhesive unit 210 can be made larger, so that each photosensitive adhesive unit 210 can adhere to a plurality of to-be-transferred chips 40, that is, the vertical projection of each photosensitive adhesive unit 210 on the transfer substrate 10 covers a plurality of to-be-transferred chips 40. Illustratively, the chips 40 to be transferred are disposed on the carrier substrate 30 in an array arrangement, and the size and shape of one photosensitive adhesive unit 210 are the same as the shape and size of the area where 9 chips 90 to be transferred are located, that is, the size and shape of one photosensitive adhesive unit 210 are the same as the size and shape of the area where 9 chips 40 to be transferred are formed, wherein the size of the area where 9 chips 40 to be transferred are formed includes the size of 9 chips 40 to be transferred and the size of the space between adjacent chips 40 to be transferred. The spacing position between the adjacent photosensitive adhesive units 210 is also free of photosensitive adhesive, so that when the light source irradiates the transfer substrate, the corresponding chip 40 to be transferred is adhered only at the position where the photosensitive adhesive unit 210 exists, and the phenomenon of photosensitive adhesive gasification or carbonization does not occur at the spacing position between the adjacent photosensitive adhesive units 210.
In this embodiment, each photosensitive adhesive unit 210 corresponds to a plurality of chips 40 to be transferred, so that the size of the photosensitive adhesive unit 210 can be correspondingly increased, the difficulty of the process for forming the photosensitive adhesive unit 210 can be reduced when the transfer substrate is manufactured, and the alignment precision between the photosensitive adhesive unit 210 and the chips 40 to be transferred can be improved.
Fig. 6 is a schematic top view of another chip transfer substrate according to an embodiment of the present invention, and referring to fig. 6, based on the above technical solutions, the chip transfer substrate according to the embodiment of the present invention further includes a non-photosensitive adhesive 220, where the non-photosensitive adhesive 220 is at least disposed between some adjacent photosensitive adhesive units 210.
Specifically, the non-photosensitive glue 220 may be disposed around the photosensitive glue unit 210, and the photosensitive glue unit 210 and the non-photosensitive glue 220 are integrated, that is, the non-photosensitive glue 220 is disposed at a spacing position between adjacent photosensitive glue units 210. The photosensitive adhesive unit 210 is controlled to be attached to the chip 40 to be transferred in an aligned mode, when the photosensitive adhesive unit 210 is irradiated by light of the first wavelength emitted by the light source, the energy absorbed by the photosensitive adhesive unit 210 shielded by the chip 40 to be transferred is small, and the energy absorbed by the non-photosensitive adhesive 220 not shielded by the chip 40 to be transferred is large, but because the non-photosensitive adhesive 220 does not contain photosensitive materials, the non-photosensitive adhesive 220 can be used as a buffer structure of the photosensitive adhesive unit 210, when the light energy emitted by the light source is too high, the non-photosensitive adhesive 220 absorbs the energy and does not enable the non-photosensitive adhesive 220 to be gasified or carbonized, meanwhile, the non-photosensitive adhesive 220 can also absorb part of the energy irradiated to the photosensitive adhesive unit 210, and accordingly the phenomenon of gasification or carbonization of the photosensitive adhesive caused by the too high energy of the light source is reduced. The irradiated photosensitive adhesive unit 210 is rapidly cured and adheres to the corresponding chip 40 to be transferred. The light with the second wavelength emitted by the light source is adopted to irradiate the chip transfer substrate adhered with the chip 40 to be transferred, so that the photosensitive adhesive unit 210 loses viscosity, the chip 40 to be transferred is transferred onto the target substrate 50, and batch transfer of the LED chips is realized.
Fig. 7 is a schematic structural diagram of a chip transfer device according to an embodiment of the present invention, and referring to fig. 1, fig. 2, and fig. 7, the chip transfer device includes a light source 100, where the light source 100 is configured to provide light with a preset wavelength; the transfer substrate comprises a transfer base 10 and a glue layer 20 positioned on the transfer base 10, wherein the glue layer 20 comprises a plurality of photosensitive glue units 210 arranged in an array, and a space exists between every two adjacent photosensitive glue units 210; the photosensitive adhesive unit 210 is used for adhering the corresponding chip 40 to be transferred in the chip array to be transferred to the target substrate 50 when being irradiated by the light source. The light source 100 can emit light with a first wavelength and light with a second wavelength, and the photosensitive adhesive unit 210 can be cured quickly to generate viscosity when being irradiated by the light with the first wavelength, so as to adhere the corresponding chip 40 to be transferred. When the photosensitive adhesive unit 210 is irradiated by the light with the second wavelength, it can be restored to the fluid state and lose the viscosity, so that the adhered chip 40 to be transferred falls off.
The chip transfer device provided by the embodiment of the invention comprises the chip transfer substrate provided by any embodiment of the invention, so that the chip transfer device also has the beneficial effects described in any embodiment of the invention, and the description is omitted.
An embodiment of the present invention further provides a chip transfer method, where the chip transfer method may be applied to the chip transfer apparatus according to any of the above embodiments of the present invention, fig. 8 is a flowchart of the chip transfer method according to the embodiment of the present invention, fig. 9 to 12 are schematic process diagrams corresponding to steps of the chip transfer method in fig. 8, and referring to fig. 8 to 12, the chip transfer method according to the embodiment of the present invention includes:
s110, providing a chip transfer substrate, wherein the chip transfer substrate comprises a transfer substrate and a glue layer positioned on the transfer substrate, the glue layer comprises a plurality of photosensitive glue units arranged in an array mode, and a space exists between every two adjacent photosensitive glue units.
Specifically, fig. 9 is a schematic structural diagram of another chip transfer substrate according to an embodiment of the present invention, and referring to fig. 9, the chip transfer substrate includes a transfer base 10 and a glue layer 20 on the transfer base 10. The glue layer 20 includes a photosensitive glue unit 210 and a non-photosensitive glue 220 disposed around the photosensitive glue unit 210, wherein the photosensitive glue unit 210 and the non-photosensitive glue 220 are integrated, and the glue layer 20 can be formed on the transfer substrate 10 by coating. For example, a full-layer continuous adhesive layer 20 is coated on the transfer substrate 10, the adhesive layer 20 is patterned to form a set pattern of the adhesive layer 20 at a position for forming the photosensitive adhesive unit 210, and the photosensitive adhesive unit 210 is formed by filling a photosensitive material into the set pattern. The set pattern can be designed according to the shape of the chip 40 to be transferred, so as to realize accurate alignment between the photosensitive adhesive unit 210 and the chip 40 to be transferred. The photosensitive adhesive unit 210 may be formed by forming a predetermined pattern on the adhesive layer 20 by using a nano-imprinting technique (including thermal imprinting and extreme ultraviolet imprinting) or a photolithography technique, and filling a photosensitive material, which may be a photosensitive polymer material such as polyimide, into the predetermined pattern. The transfer substrate 10 may be a glass substrate for supporting the adhesive layer 20 disposed thereon.
And S120, providing a bearing substrate, arranging the chip array to be transferred on the bearing substrate, and aligning the photosensitive adhesive unit with the chip array to be transferred.
Specifically, fig. 10 is a schematic diagram of a process of aligning a photosensitive adhesive unit and a chip to be transferred according to an embodiment of the present invention, and referring to fig. 10, a chip array to be transferred is formed on a carrier substrate 30, where the chip array to be transferred includes a chip 40 to be transferred, and the chip 40 to be transferred may be a Micro LED. Each photosensitive adhesive unit 210 disposed on the transfer substrate 10 corresponds to at least one chip 40 to be transferred, and the chip 40 to be transferred and the photosensitive adhesive unit 210 are precisely aligned, so that the chip 40 to be transferred and the photosensitive adhesive unit 210 are attached to each other.
And S130, providing a light source, wherein the light source is used for providing light rays with preset wavelengths.
Specifically, fig. 11 is a schematic diagram illustrating a process of adhering a corresponding chip to be transferred to a photosensitive adhesive unit according to an embodiment of the present invention, and referring to fig. 11, a light source is a light source capable of providing light with a preset wavelength, where the light with the preset wavelength may be ultraviolet light, infrared light, and the like, and energy emitted by the light source is less than 10 millijoules. When the photosensitive adhesive unit 210 is irradiated with light (ultraviolet rays) of the first wavelength, the photosensitive adhesive unit 210 is rapidly cured and adheres to the corresponding chip 40 to be transferred. Since the non-photosensitive adhesive 220 is disposed around the photosensitive adhesive units 210, that is, the non-photosensitive adhesive 220 is disposed at a spaced position between adjacent photosensitive adhesive units 210. The shape and the size of the photosensitive adhesive unit 210 are the same as those of the chip 40 to be transferred, and the photosensitive adhesive unit 210 and the chip 40 to be transferred are controlled to be attached in an aligned mode, when the photosensitive adhesive unit 210 is irradiated by an ultraviolet light source, the energy absorbed by the photosensitive adhesive unit 210 shielded by the chip 40 to be transferred is small, and the energy absorbed by the non-photosensitive adhesive 220 not shielded by the chip 40 to be transferred is large, but because the non-photosensitive adhesive 220 does not contain a photosensitive material, the non-photosensitive adhesive 220 can be used as a buffer structure of the photosensitive adhesive unit 210, when the light energy emitted by the light source is too high, the non-photosensitive adhesive 220 absorbs the energy, so that the non-photosensitive adhesive is not gasified or carbonized, and meanwhile, the non-photosensitive adhesive 220 can also absorb part of the energy irradiated into the photosensitive adhesive unit 210, so that the phenomenon of gasification or carbonization of the photosensitive adhesive caused by the too high energy of the light source is reduced. The irradiated photosensitive adhesive unit 210 is rapidly cured and adheres to the corresponding chip 40 to be transferred.
S140, providing a target substrate, and irradiating the photosensitive adhesive unit through a light source to adhere a corresponding chip to be transferred in the chip array to be transferred to the target substrate.
Specifically, fig. 12 is a schematic diagram of a process of transferring a chip to be transferred onto a target substrate according to an embodiment of the present invention, referring to fig. 12, a chip transfer substrate adhered with the chip 40 to be transferred is irradiated by light (infrared) with a second wavelength, and the cured photosensitive adhesive unit 210 is melted to lose viscosity, so as to transfer the chip 40 to be transferred onto the target substrate 50, thereby implementing batch transfer of the chips 40 to be transferred.
After the photosensitive adhesive unit 210 is irradiated by ultraviolet rays and adheres to the chip 40 to be transferred, if the chip 40 to be transferred adhered to the chip transfer substrate is damaged, the damaged chip 40 to be transferred can be repaired in a laser single-point repairing manner. Illustratively, the corresponding photosensitive adhesive unit 210 may be irradiated by infrared rays emitted from the light source, so that the photosensitive adhesive unit 210 loses its adhesiveness, and the chip 40 to be transferred at the corresponding position on the chip transfer substrate is peeled off, so that a new chip 40 to be transferred can be re-adhered. When laser irradiation is carried out on the chip 40 to be transferred which needs to be repaired, due to the fact that non-photosensitive glue exists at the position which is not shielded by the chip 40 to be transferred (namely the distance position between the adjacent photosensitive glue units 40) and photosensitive glue does not exist, when laser irradiation is carried out, the non-photosensitive glue cannot be carbonized, residual glue does not exist around the chip 40 to be transferred which falls off, and the yield of laser single-point repair cannot be influenced.
The embodiment of the invention provides a chip transfer method, which is characterized in that a plurality of photosensitive adhesive units arranged in an array are formed by patterning an adhesive layer, each photosensitive adhesive unit at least corresponds to one chip to be transferred, and a space exists between every two adjacent photosensitive adhesive units. Because there is the interval between the adjacent photosensitive glue unit for interval position does not have photosensitive glue, consequently at the in-process that shifts the chip, treats that to shift the chip and photosensitive glue unit and correspond the setting, and interval position between the adjacent photosensitive glue unit can not produce the phenomenon of gluing material gasification or carbonization because of absorbing the illumination energy, thereby is favorable to improving the transfer yield of treating the chip. In addition, because of the absence of photosensitive adhesive at the spacing position between the adjacent photosensitive adhesive units, residual adhesive is not formed around the chip to be transferred in the single-point repairing process of the chip to be transferred, and the single-point repairing yield is favorably improved.
It is to be noted that the foregoing description is only exemplary of the invention and that the principles of the technology may be employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (10)

1. A chip transfer substrate, comprising:
a transfer substrate;
the adhesive layer is positioned on the transfer substrate and comprises a plurality of photosensitive adhesive units which are arranged in an array manner, and a space is reserved between every two adjacent photosensitive adhesive units; the photosensitive adhesive unit is used for adhering a corresponding chip to be transferred in the chip array to be transferred to a target substrate when the photosensitive adhesive unit is irradiated by a light source;
wherein each photosensitive adhesive unit corresponds to at least one chip to be transferred.
2. The chip transfer substrate according to claim 1, wherein each of the photosensitive adhesive units corresponds to one of the chips to be transferred.
3. The chip transfer substrate according to claim 2, wherein the photosensitive adhesive unit has the same shape and size as the chip to be transferred.
4. The chip transfer substrate according to claim 1, wherein each photosensitive adhesive unit corresponds to a plurality of chips to be transferred;
preferably, the shape of the photosensitive adhesive unit is the same as the shape of the corresponding region where the chips to be transferred are located, and the sizes of the photosensitive adhesive unit and the corresponding region are equal; the area where the chips to be transferred are located comprises the position where the chips to be transferred are located and the distance position between the chips to be transferred and the adjacent chips to be transferred in the chips to be transferred.
5. The chip transfer substrate according to claim 1, wherein the size of the chip to be transferred is less than or equal to 100 micrometers.
6. The chip transfer substrate according to claim 1, further comprising a non-photosensitive adhesive disposed at least partially between adjacent photosensitive adhesive units.
7. The chip transfer substrate according to claim 6, wherein the non-photosensitive adhesive is disposed around the photosensitive adhesive unit, and the photosensitive adhesive unit and the non-photosensitive adhesive are integrated.
8. A chip transfer apparatus, comprising:
the light source is used for providing light rays with preset wavelengths;
the chip transfer substrate comprises a transfer substrate and a glue layer positioned on the transfer substrate, wherein the glue layer comprises a plurality of photosensitive glue units which are arranged in an array manner, and a space is reserved between every two adjacent photosensitive glue units; the photosensitive adhesive unit is used for adhering a corresponding chip to be transferred in the chip array to be transferred to the target substrate when the photosensitive adhesive unit is irradiated by the light source.
9. A method of chip transfer, comprising:
providing a chip transfer substrate, wherein the chip transfer substrate comprises a transfer substrate and a glue layer positioned on the transfer substrate, the glue layer comprises a plurality of photosensitive glue units arranged in an array, and a space is reserved between every two adjacent photosensitive glue units;
providing a bearing substrate, wherein a chip array to be transferred is arranged on the bearing substrate, and the photosensitive adhesive unit and the chip array to be transferred are aligned;
providing a light source, wherein the light source is used for providing light rays with preset wavelengths;
and providing a target substrate, and irradiating the photosensitive adhesive unit through the light source to adhere a corresponding chip to be transferred in the chip array to be transferred to the target substrate.
10. The chip transfer method according to claim 9, wherein the providing a transfer substrate comprises:
providing a transfer substrate, and forming a whole continuous glue layer on the transfer substrate;
and patterning the adhesive layer to form a set pattern on the adhesive layer at a position for forming a photosensitive adhesive unit, and filling a photosensitive material into the set pattern to form the photosensitive adhesive unit.
CN202110426192.2A 2021-04-20 2021-04-20 Chip transfer substrate, transfer device and chip transfer method Pending CN115223911A (en)

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Application Number Priority Date Filing Date Title
CN202110426192.2A CN115223911A (en) 2021-04-20 2021-04-20 Chip transfer substrate, transfer device and chip transfer method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110426192.2A CN115223911A (en) 2021-04-20 2021-04-20 Chip transfer substrate, transfer device and chip transfer method

Publications (1)

Publication Number Publication Date
CN115223911A true CN115223911A (en) 2022-10-21

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