CN115223478A - Intelligent screen device based on quantum well diode - Google Patents
Intelligent screen device based on quantum well diode Download PDFInfo
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- CN115223478A CN115223478A CN202210840602.2A CN202210840602A CN115223478A CN 115223478 A CN115223478 A CN 115223478A CN 202210840602 A CN202210840602 A CN 202210840602A CN 115223478 A CN115223478 A CN 115223478A
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
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Abstract
The invention relates to a smart screen device based on a quantum well diode. The intelligent screen device based on the quantum well diode comprises a power supply structure, an array structure, a signal receiving structure, a mode control structure, a storage structure and an interaction structure; the array structure comprises an array chip, a plurality of PMOS drive circuits and a plurality of NMOS drive circuits, wherein the array chip comprises a plurality of quantum well diodes which are arranged in an array; the signal receiving structure comprises a trans-impedance amplifier and an analog-digital converter; the mode control structure comprises a mode switching circuit and a weight resistor network, wherein the mode switching circuit is used for controlling the array chip to switch between a first mode and a second mode; the storage structure comprises a storage chip; the interactive structure includes an interactive screen. The invention enables the intelligent screen to have an image display function, can also detect optical signals in two modes, expands the function of the intelligent screen and is beneficial to reducing the size of a device with a visible light communication function.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to an intelligent screen device based on a quantum well diode.
Background
As an emerging communication mode, the visible light communication technology realizes information transmission by controlling on and off of an LED (light-emitting diode), and the transmission rate of the most advanced visible light communication can reach Gb/s. The traditional radio signal transmission equipment has many limitations, such as high price but low efficiency, for example, a mobile phone is globally used for enhancing the signal transmission of the mobile phone by establishing millions of base stations, but most energy is consumed for cooling the equipment, and the energy effective utilization efficiency is only 5%. In contrast, the visible light communication technology essentially realizes the transmission of information through optical signals, and the required transmission equipment only needs LEDs and does not occupy the existing frequency band resources, so that mutual interference with the existing frequency band equipment is not generated. Based on the advantages of good communication quality and confidentiality, better environmental protection and the like of a visible light communication mode, the visible light communication is increasingly regarded by colleges and universities and research institutions as a standby scheme of radio frequency communication.
Currently, a combination of LED (light emitting diode) -PDs (photodiode) is commonly used in the visible light communication system, and the visible light communication device is large in size and high in cost. Present wisdom screen mainly used video or the broadcast of picture and text, along with the progress of technique, people also progressively promote to the demand of next generation wisdom screen, no longer satisfy in traditional playback devices, but pursue the function diversification of wisdom screen.
Therefore, how to expand the function of the smart screen to expand the application field of the smart screen and satisfy different reference requirements is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention provides a smart screen device based on a quantum well diode, which is used for solving the problem of single function of the existing smart screen, so that the multi-functionalization of the smart screen device is realized, and the application field of the smart screen device is expanded.
In order to solve the problems, the invention provides an intelligent screen device based on a quantum well diode, which comprises a power supply structure, an array structure, a signal receiving structure, a mode control structure, a storage structure and an interaction structure, wherein the power supply structure is connected with the array structure; wherein:
the array structure comprises an array chip, a plurality of PMOS drive circuits and a plurality of NMOS drive circuits, wherein the array chip comprises a plurality of quantum well diodes which are arranged in an array, the plurality of PMOS drive circuits are used for controlling the array chip to be connected with and disconnected from the power supply structure, the plurality of NMOS drive circuits are used for controlling the array chip to be connected with and disconnected from a grounding end, the quantum well diodes can transmit first optical signals to the outside, and the quantum well diodes can receive second optical signals from the outside and convert the second optical signals into second current signals;
the signal receiving structure comprises a transimpedance amplifier and an analog-to-digital converter, wherein the transimpedance amplifier is used for amplifying the second current signal, and the analog-to-digital converter is used for carrying out quantization coding on the amplified second current signal;
the mode control structure comprises a mode switching circuit and a weight resistance network, the mode switching circuit is used for controlling the array chip to switch between a first mode and a second mode, the first mode refers to that the quantum well diodes in the array chip transmit the first optical signals to the outside and receive the second optical signals from the outside, the second mode refers to that the quantum well diodes in the array chip receive the second optical signals from the outside in an extinguishing state, and the weight resistance network is used for limiting the voltage loaded on the array chip;
the storage structure comprises a storage chip, and the storage chip is used for respectively storing the detection values of the second optical signals received by the quantum well diodes in the array chip;
the interactive structure includes an interactive screen for interacting with a user.
Optionally, the method further includes:
the master control structure comprises a single chip microcomputer and a peripheral circuit electrically connected with the single chip microcomputer, and the single chip microcomputer is electrically connected with the array structure, the signal receiving structure, the mode control structure, the storage structure and the interaction structure;
the type of the single chip microcomputer is Atmega328p, the peripheral circuit comprises a 12MHz crystal oscillator circuit, a reset circuit and a programming circuit, the 12MHz crystal oscillator circuit is used for generating the working frequency of the single chip microcomputer, the reset circuit is used for resetting hardware of the single chip microcomputer, and the programming circuit is used for programming a program of the single chip microcomputer.
Optionally, the power structure includes a USB interface, and is configured to connect to an external mobile power source, so as to supply power to the main control structure, the array structure, the signal receiving structure, the mode control structure, the storage structure, and the interaction structure.
Optionally, the multi-channel PMOS driving circuit includes a plurality of PMOS driving circuits corresponding to the plurality of quantum well diodes in the array chip one to one, the multi-channel NMOS driving circuit includes a plurality of NMOS driving circuits corresponding to the plurality of quantum well diodes in the array chip one to one, and an anode of each quantum well diode is electrically connected to one of the PMOS driving circuits, and a cathode of each quantum well diode is electrically connected to one of the NMOS driving circuits.
Optionally, the multi-channel PMOS driving circuit further includes a PMOS control chip, the PMOS control chip is electrically connected to all the PMOS driving circuits, and the model of the PMOS control chip is BSS84LTIG;
the multi-channel NMOS drive circuit further comprises an NMOS control chip, the NMOS control chip is electrically connected with all the NMOS drive circuits, and the model of the NMOS control chip is 2N7002.
Optionally, the type of the transimpedance amplifier is AD8015;
the model of the analog-to-digital converter is ADC0832CCN, and the precision of the analog-to-digital converter is 8 bits.
Optionally, the mode switching circuit includes a multiplexer, the multiplexer is used for controlling the on and off of the array chip, and the model of the multiplexer is TS5a23157;
the weight resistor network comprises a chip with the model number X9C 104.
Optionally, the interactive screen is of a model JLT24009C-V3, and the interactive screen is further configured to display the second optical signal detected by the array chip, and switch a working mode of the array chip according to a touch instruction of a user, where the working mode includes the first mode and the second mode.
Optionally, the analog-to-digital converter is configured to perform quantization coding on the intensity of the second optical signal received by the quantum well diode in the array chip to obtain a quantization result; and the main control structure controls the interactive screen to display the intensity of the second optical signal received by each quantum well diode in a gray scale according to the quantization result so as to form a detection pattern on the interactive screen.
Optionally, the memory chip includes a plurality of registers in one-to-one correspondence with the plurality of quantum well diodes in the array chip, and the registers are configured to store the quantization results of the second optical signals received by the quantum well diodes.
According to the intelligent screen device based on the quantum well diode, provided by the invention, the physical characteristic that the quantum well diode has light emitting and detecting coexistence is utilized, and the mode control structure is arranged to control the array chip in the intelligent screen device based on the quantum well diode to work in two modes of on detection and off detection, so that the intelligent screen has an image display function, can detect an optical signal in the two modes, expands the function of the intelligent screen and further expands the application field of the intelligent screen. In addition, the array chip with the functions of light emitting and detecting is integrated in the intelligent screen, and the size of the device with the visible light communication function is reduced, so that the application field of the visible light communication technology is expanded.
Drawings
FIG. 1 is a block diagram of a quantum well diode based smart screen device in accordance with an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of an array chip according to an embodiment of the present disclosure.
Detailed Description
The following describes in detail a specific embodiment of the quantum well diode-based smart panel apparatus provided in the present invention with reference to the accompanying drawings.
The present embodiment provides a smart screen device based on a quantum well diode, and fig. 1 is a structural block diagram of the smart screen device based on the quantum well diode in the embodiments of the present disclosure. As shown in fig. 1, the smart screen device based on quantum well diodes includes a power supply structure 21, an array structure, a signal receiving structure, a mode control structure, a storage structure and an interaction structure; wherein:
the array structure comprises an array chip 10, a multi-channel PMOS drive circuit 11 and a multi-channel NMOS drive circuit 12, wherein the array chip 10 comprises a plurality of quantum well diodes which are arranged in an array, the multi-channel PMOS drive circuit 11 is used for controlling the on and off of the array chip 10 and the power supply structure 21, the multi-channel NMOS drive circuit 12 is used for controlling the on and off of the array chip 10 and a grounding terminal (namely 0 level), the quantum well diodes can emit a first optical signal L1 to the outside, and the quantum well diodes can receive a second optical signal L2 from the outside and convert the second optical signal L2 into a second current signal;
the signal receiving structure comprises a transimpedance amplifier 13 and an analog-to-digital converter 14, wherein the transimpedance amplifier 13 is used for amplifying the second current signal, and the analog-to-digital converter 14 is used for carrying out quantization coding on the amplified second current signal;
the mode control structure comprises a mode switching circuit 15 and a weight resistor network 16, wherein the mode switching circuit 15 is used for controlling the array chip 10 to switch between a first mode and a second mode, the first mode is that the quantum well diodes in the array chip 10 transmit the first optical signal L1 to the outside and receive the second optical signal L2 from the outside, the second mode is that the quantum well diodes in the array chip 10 receive the second optical signal L2 from the outside in an off state, and the weight resistor network 16 is used for limiting the voltage loaded on the array chip 10;
the storage structure comprises a memory chip 19, wherein the memory chip 19 is used for respectively storing the detection values of the second optical signal L2 received by each quantum well diode in the array chip 10;
the interactive structure comprises an interactive screen 20, the interactive screen 20 being for interacting with a user.
Specifically, the emission spectrum and the detection spectrum of the quantum well diode have an overlapping region, so that the quantum well diode has a physical phenomenon of coexistence of light emission and detection. In an embodiment, the quantum well diode is a nitride quantum well diode. The quantum well diode-based smart screen device comprises at least two operating modes, namely the first mode and the second mode. In the first mode, the quantum well diode in the array chip 10 emits the first optical signal L1 to the outside (i.e., the quantum well diode is in a lit state), and at the same time, the quantum well diode in the array chip 10 receives the second optical signal from the outside (i.e., the quantum well diode detects the second optical signal from the outside) and converts the second optical signal into the second current signal. The transimpedance amplifier 13 in the signal receiving structure receives the second current signal from each quantum well diode in the array chip 10, and amplifies the second current signal to form a first receiving signal. The Analog-to-Digital Converter (ADC) performs quantization coding on the received first received signal to form a second received signal. The memory chip 19 is used for storing the second receiving signals (i.e. the second receiving signals are used as the detection values) of all the quantum well diodes in the array chip 10. The interactive screen 20 can image according to the second receiving signals of all the quantum well diodes in the array chip 10 stored in the memory chip 19, that is, the interactive screen 20 displays the detection result of the array chip 10 in the form of an image, so that a user can intuitively and quickly know the detection result of the array chip 10.
In this embodiment, the detected value of the second optical signal L2 received by the quantum well diode may be intensity information of the second optical signal L2 received by the quantum well diode. In an example, the detection values may be characterized by the second received signal. In another example, the detection values may also be characterized by the second received signal after a gray level quantization process.
Those skilled in the art can adjust the number and arrangement of the quantum well diodes arranged in an array in the array chip 10 according to actual needs to meet the requirements of different detection accuracies or detection ranges. In one example, the array chip 10 may include 16 quantum well diodes arranged in 4 rows and 4 columns, 25 quantum well diodes arranged in 5 rows and 5 columns, or 400 quantum well diodes arranged in 20 rows and 20 columns.
Optionally, the smart screen device based on the quantum well diode further includes:
the main control structure comprises a single chip microcomputer 17 and a peripheral circuit 18 electrically connected with the single chip microcomputer 17, wherein the single chip microcomputer 17 is electrically connected with the array structure, the signal receiving structure, the mode control structure, the storage structure and the interaction structure;
the type of the single chip microcomputer 17 is Atmega328p, the peripheral circuit 18 comprises a 12MHz crystal oscillator circuit, a reset circuit and a programming circuit, the 12MHz crystal oscillator circuit is used for generating the working frequency of the single chip microcomputer 17, the reset circuit is used for carrying out hardware reset on the single chip microcomputer 17, and the programming circuit is used for programming the program of the single chip microcomputer 17. In one example, the programming circuit comprises a chip with a model CH 340G.
Specifically, the single chip microcomputer 17 is configured to control the mode control structure to switch the operating mode of the array chip 10, control the signal receiving structure to receive and process the detection signal from the array chip 10, control the signal receiving structure to store the processed detection signal in the storage structure, and communicate with the interaction structure to perform a corresponding operation by receiving an instruction applied to the interaction structure by a user. The single chip 17 is further configured to apply a control signal to the array structure, for example, apply a control signal to the multiple PMOS driving circuits 11 and/or the multiple NMOS driving circuits 12 to control whether the array chip 10 is connected to the power supply structure 21 and/or the ground, so as to control states of the quantum well diodes in the array chip 10, where the states of the quantum well diodes include a turn-on state and a turn-off state. In an embodiment, the single chip 17 communicates with the memory chip 19 and the interactive screen 20 through an SPI (Serial Peripheral Interface) or an IIC (Inter-Integrated Circuit bus) protocol. The peripheral circuit 18 is connected to the single chip microcomputer 17 and is configured to transmit a peripheral control signal to the single chip microcomputer 17, so as to ensure that the single chip microcomputer 17 can operate correctly.
For example, when the array chip 10 is scan-driven by the multi-channel PMOS driving circuit 11 and the multi-channel NMOS driving circuit 12, the single chip microcomputer 17 operates under a clock generated by the 12MHz crystal oscillator circuit, and each clock period gates a pixel (i.e., one quantum well diode) in the array chip 10 to be lighted (i.e., the first optical signal L1 is emitted to the outside), so that the array chip 10 generates a corresponding display pattern by using an afterglow effect of human eyes. The second receiving signal generated in the first mode and the second receiving signal generated in the second mode are changed in amplitude, and these changes are demodulated and filtered by the single chip microcomputer 17 in the main control structure, and then are sent to the storage chip 19 for storage or sent to the interactive screen 20 for display.
Optionally, the power structure 21 includes a USB interface, and is configured to be connected to an external mobile power source, so as to supply power to the main control structure, the array structure, the signal receiving structure, the mode control structure, the storage structure, and the interaction structure.
For example, the power structure 21 may be electrically connected to the external mobile power source through the USB interface to supply 5V power.
In order to reduce or even eliminate optical crosstalk and/or electrical crosstalk between adjacent quantum well diodes in the array chip 10, optionally, the multi-channel PMOS driving circuit 11 includes a plurality of PMOS driving circuits corresponding to a plurality of quantum well diodes in the array chip 10 one by one, the multi-channel NMOS driving circuit 12 includes a plurality of NMOS driving circuits corresponding to a plurality of quantum well diodes in the array chip 10 one by one, and an anode of each quantum well diode is electrically connected to one of the PMOS driving circuits and a cathode of each quantum well diode is electrically connected to one of the NMOS driving circuits.
The multi-channel PMOS driving circuit 11 is turned on by the gate of the PMOS in the PMOS driving circuit being turned on with a low level, and the multi-channel NMOS driving circuit 12 is turned on by the gate of the NMOS in the NMOS driving circuit being turned on with a high level, so as to correspond to two operating modes (i.e. a first mode and a second mode) of the array chip 10.
Optionally, the multi-channel PMOS driving circuit 11 further includes a PMOS control chip, the PMOS control chip is electrically connected to all the PMOS driving circuits, and the model of the PMOS control chip is BSS84LTIG;
the multi-channel NMOS drive circuit 12 further comprises an NMOS control chip, the NMOS control chip is electrically connected with all the NMOS drive circuits, and the model of the NMOS control chip is 2N7002.
Specifically, when the voltage applied to the gate of a PMOS (P-Metal-Oxide-Semiconductor) in one PMOS driver circuit by the single chip microcomputer 17 is 0V, the path between the anode of the quantum well diode electrically connected to the PMOS driver circuit and the power structure 21 is turned on (that is, the anode of the quantum well diode electrically connected to the PMOS driver circuit and the power structure 21 are turned on). When the voltage loaded on the gate of an NMOS (N-Metal-Oxide-Semiconductor) in one NMOS drive circuit by the single chip microcomputer 17 is 5V, a path between the cathode of the quantum well diode electrically connected to the NMOS drive circuit and the ground is turned on (i.e., the cathode of the quantum well diode electrically connected to the NMOS drive circuit is turned on from the ground).
Fig. 2 is a schematic structural diagram of an array chip according to an embodiment of the present disclosure. Taking the p-electrode of the quantum well diode as the positive electrode and the n-electrode as the negative electrode as an example, as shown in fig. 2, the array chip 10 includes a plurality of quantum well diodes arranged in an array, a plurality of positive connection lines 30, a plurality of negative connection lines 31, and a plurality of isolation layers 32. The quantum well diode includes a p-electrode 35, an n-electrode 37, and an active region 36. The p-electrodes 35 of the quantum well diodes in the same column in the array chip 10 are electrically connected with the same positive connecting wire 30, the n-electrodes 37 of the quantum well diodes in the same row in the array chip 10 are electrically connected with the same negative connecting wire 31, and each isolation layer 32 is located between two adjacent rows of quantum well diodes and used for isolating the two adjacent rows of quantum well diodes. Each negative electrode connecting line 31 is electrically connected with one NMOS driving circuit, and each positive electrode connecting line 30 is electrically connected with one PMOS driving circuit.
Optionally, the type of the transimpedance amplifier 13 is AD8015;
the model of the analog-to-digital converter 14 is ADC0832CCN, and the precision of the analog-to-digital converter 14 is 8 bits.
Specifically, the number of channels of the transimpedance amplifier 13 and the number of channels of the analog-to-digital converter 14 are both the same as the number of quantum well diodes in the array chip 10. In an embodiment, the transimpedance amplifier 13 amplifies the second current signal differently in the first mode than in the second mode to meet the requirement of different detection accuracy. For example, when the array chip 10 is in the first mode (i.e., the lighting detection mode), the amplification of the transimpedance amplifier 13 is 2 times, so that a superimposed voltage generated by each of the quantum well diodes in the array chip 10 is monitored by the analog-to-digital converter 14, where the superimposed voltage is a sum of a driving voltage for driving the quantum well diodes to emit the first optical signal to the outside and a detection voltage generated by the second optical signal received by the quantum well diodes from the outside, so as to perform quantization coding in the analog-to-digital converter 14. When the array chip 10 is in the second mode (i.e., the quenching detection mode), the amplification factor of the transimpedance amplifier 13 is 100-500 times, so that the μ a level current generated by the second optical signal received by each quantum well diode in the array chip 10 can be changed to a mA level to be monitored by the analog-to-digital converter 14, and then quantization coding is performed in the analog-to-digital converter 14.
In an example, the number of channels of the transimpedance amplifier 13 and the number of channels of the analog-to-digital converter 14 are both less than the number of quantum well diodes in the array chip 10, for example, the transimpedance amplifier 13 and the analog-to-digital converter 14 each include only one channel, in this case, the signal receiving structure may further include a multiplexer located at a front stage of the transimpedance amplifier 13, for example, a 32-to-one multiplexer ADG732BSUZ, and the single-chip microcomputer 17 controls the multiplexer in the signal receiving structure to select different channels, so as to amplify and quantize the second optical signals received by the quantum well diodes, respectively, to reduce the overall volume and cost of the quantum well diode-based smart screen device, and to help save link resources. At this time, the signal receiving structure sequentially transmits the second optical signal after quantization coding to the single chip microcomputer 17 for analysis and gray scale quantization.
Optionally, the mode switching circuit 15 includes a multiplexer, the multiplexer is used for controlling the on and off of the array chip 10, and the model of the multiplexer is TS5a23157;
the weight resistor network 16 includes a chip of type X9C 104.
The weight resistor network 16 is used to adjust the voltage applied to each quantum well diode in the array chip 10, so as to control the quantum well diodes to be turned on or off. The weight resistor network 16 may be formed by combining a plurality of resistors. The plurality in the present embodiment means two or more.
Specifically, the single-chip microcomputer 17 can adjust the resistance value of the weight resistance network 16, so as to change the voltage value of a single quantum well diode in the array chip 10. For example, in the second mode (i.e., an extinction detection mode), the voltage value of a single quantum well diode is adjusted to be in a range of 0V to 2.0V through the weight resistor network 16, so that the quantum well diode in the array chip 10 is in an extinction state; in the first mode (i.e., a lighting detection mode), the voltage value of a single quantum well diode is adjusted to be within a range of 2.0V to 2.4V through the weight resistor network 16, so that the quantum well diode in the array chip 10 is in a lighting state, and a pixel signal to be displayed is sent to the corresponding quantum well diode in the array chip 10 through the main control structure, so that the array chip 10 displays a corresponding pattern, and meanwhile, an external environment optical signal (i.e., the detected second optical signal) is read through the signal receiving structure.
Optionally, the analog-to-digital converter 14 is configured to perform quantization coding on the intensity of the second optical signal received by the quantum well diode in the array chip 10 to obtain a quantization result; and the main control structure controls the interactive screen 20 to display the intensity of the second optical signal received by each quantum well diode in a gray scale according to the quantization result so as to form a detection pattern on the interactive screen 20.
Optionally, the memory chip 19 includes a plurality of registers in one-to-one correspondence with the plurality of quantum well diodes in the array chip 10, and the registers are configured to store the quantization results of the second optical signals received by the quantum well diodes.
The memory chip 19 may be any memory chip capable of matching with the SPI protocol or the IIC protocol of the main control structure. In one embodiment, the memory chip 19 may be, but is not limited to, any one of SDRAM, ROM, FLASH, SD card. In another embodiment, the memory chip 19 may also be a FIFO (First Input First Output) memory located inside the main control structure. For example, the memory chip 19 communicates with the single chip microcomputer 17 through an SPI protocol or an IIC protocol, and the communication content includes information writing and information reading. Specifically, when the single chip microcomputer 17 receives the second receiving signal transmitted by the analog-to-digital converter 14, voltage detection values of the quantum well diodes in the array chip 10 are recorded according to different clock counts. The number of the registers in the memory chip 19 is the same as the number of the quantum well diodes in the array chip 10, and the storage depth of each register is the same as the precision of the analog-to-digital converter 14, for example, the precision of the analog-to-digital converter 14 is 8 bits, and the storage depth of the register is also 8 bits. The single chip microcomputer 17 analyzes and quantizes the gray scale of the received second received signal, and stores the second received signal in the register of the memory chip 19, and the second received signal is used as a data source of the interactive screen 20, that is, the interactive screen 20 can perform corresponding gray scale display according to the detection values of the different quantum well diodes.
Optionally, the model of the interactive screen 20 is JLT24009C-V3, and the interactive screen 20 is further configured to display the second optical signal detected by the array chip 10, and switch a working mode of the array chip 10 according to a touch instruction of a user, where the working mode includes the first mode and the second mode.
Specifically, the interactive screen 20 reads the detection value corresponding to each quantum well diode in the array chip 10 in the storage chip 19 through the single chip microcomputer 17, and displays the detection value on the interactive screen 20. In an embodiment, a multi-bit gray scale and a quantization range of a plurality of detection values corresponding to the multi-bit gray scale one by one, for example, 4-8-bit gray scales, may be predefined, and the main control structure may select a color of the corresponding gray scale to display according to the quantization result of the detection value of each quantum well diode, so as to form a pattern of the second optical signal received by the array chip 10 in the interactive screen 20. That is, the interaction screen 20 performs gray scale quantization display on the light intensity information of the second optical signal received by each quantum well diode in the array chip 10. In order to improve the imaging clarity of the interactive screen 20 in the first mode and the second mode at the same time, in an embodiment, an 8-bit gray scale is predefined, and RGB values of the 8-bit gray scale are: # ffffff, # f0fcff, # f3f9f1, # c2ccd0, #6b6882, #392f41, #493131, #000000.
This embodiment provides a wisdom screen device based on quantum well diode utilizes the quantum well diode to have the physical characteristic of giving out light and surveying coexistence, controls through setting up mode control structure array chip among the wisdom screen device based on quantum well diode can be in the light detection and go out to survey work under these two kinds of modes for wisdom screen is except having the image display function, can also carry out the detection of light signal under two kinds of modes, has expanded the function of wisdom screen, and then has enlarged the application field of wisdom screen. In addition, the array chip with the functions of light emitting and detecting is integrated in the intelligent screen, and the size of the device with the visible light communication function is reduced, so that the application field of the visible light communication technology is expanded.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A smart screen device based on quantum well diodes is characterized by comprising a power supply structure, an array structure, a signal receiving structure, a mode control structure, a storage structure and an interaction structure; wherein:
the array structure comprises an array chip, a plurality of PMOS drive circuits and a plurality of NMOS drive circuits, wherein the array chip comprises a plurality of quantum well diodes which are arranged in an array, the plurality of PMOS drive circuits are used for controlling the array chip to be connected with and disconnected from the power supply structure, the plurality of NMOS drive circuits are used for controlling the array chip to be connected with and disconnected from a grounding end, the quantum well diodes can transmit first optical signals to the outside, and the quantum well diodes can receive second optical signals from the outside and convert the second optical signals into second current signals;
the signal receiving structure comprises a transimpedance amplifier and an analog-to-digital converter, wherein the transimpedance amplifier is used for amplifying the second current signal, and the analog-to-digital converter is used for carrying out quantization coding on the amplified second current signal;
the mode control structure comprises a mode switching circuit and a weight resistance network, the mode switching circuit is used for controlling the array chip to switch between a first mode and a second mode, the first mode refers to that the quantum well diodes in the array chip transmit the first optical signals to the outside and receive the second optical signals from the outside, the second mode refers to that the quantum well diodes in the array chip receive the second optical signals from the outside in an extinguishing state, and the weight resistance network is used for limiting the voltage loaded on the array chip;
the storage structure comprises a storage chip, and the storage chip is used for respectively storing the detection values of the second optical signals received by the quantum well diodes in the array chip;
the interactive structure includes an interactive screen for interacting with a user.
2. A smart screen device as claimed in claim 1, further comprising:
the master control structure comprises a single chip microcomputer and a peripheral circuit electrically connected with the single chip microcomputer, and the single chip microcomputer is electrically connected with the array structure, the signal receiving structure, the mode control structure, the storage structure and the interaction structure;
the type of singlechip is Atmega328p, peripheral circuit includes 12MHz crystal oscillator circuit, reset circuit and burns and write the circuit, 12MHz crystal oscillator circuit is used for producing the operating frequency of singlechip, reset circuit is used for carrying out hardware reset to the singlechip, burn and write the circuit and be used for the program burning of singlechip.
3. The quantum well diode-based smart screen device of claim 2, wherein the power structure comprises a USB interface for connecting with an external mobile power source to supply power to the master control structure, the array structure, the signal receiving structure, the mode control structure, the storage structure and the interaction structure.
4. The quantum well diode-based smart screen device of claim 1, wherein the multi-way PMOS driver circuit comprises a plurality of PMOS driver circuits in one-to-one correspondence with a plurality of the quantum well diodes in the array chip, the multi-way NMOS driver circuit comprises a plurality of NMOS driver circuits in one-to-one correspondence with a plurality of the quantum well diodes in the array chip, one of the PMOS driver circuits being electrically connected to a positive pole of each of the quantum well diodes, one of the NMOS driver circuits being electrically connected to a negative pole of each of the quantum well diodes.
5. The quantum-well-diode-based smart screen device according to claim 4, wherein the multi-channel PMOS driving circuit further comprises a PMOS control chip electrically connected to all the PMOS driving circuits, the PMOS control chip having a model of BSS84LTIG; the multi-channel NMOS driving circuit further comprises an NMOS control chip, the NMOS control chip is electrically connected with all the NMOS driving circuits, and the model of the NMOS control chip is 2N7002.
6. The quantum-well-diode-based smart screen device of claim 2, wherein the transimpedance amplifier is of the type AD8015;
the model of the analog-to-digital converter is ADC0832CCN, and the precision of the analog-to-digital converter is 8 bits.
7. The quantum well diode-based smart screen device of claim 1, wherein the mode switching circuit comprises a multiplexer for controlling the on and off of the array chip, the multiplexer being of type TS5a23157;
the weight resistor network comprises a chip with the model number X9C 104.
8. The quantum well diode-based smart screen device as claimed in claim 1, wherein the interactive screen has a model number JLT24009C-V3, and is further configured to display the second optical signal detected by the array chip and switch an operation mode of the array chip according to a touch instruction of a user, wherein the operation mode includes the first mode and the second mode.
9. A smart screen device as claimed in claim 8 wherein the analog-to-digital converter is configured to perform quantization coding on the intensity of the second optical signal received by the quantum well diode in the array chip to obtain a quantization result; and the main control structure controls the interactive screen to display the intensity of the second optical signal received by each quantum well diode in a gray scale mode according to the quantization result so as to form a detection pattern on the interactive screen.
10. A quantum well diode-based smart screen device as recited in claim 9 wherein said memory chip comprises a plurality of registers in one-to-one correspondence with a plurality of said quantum well diodes in said array chip, said registers for storing said quantized results of said second optical signal received by said quantum well diodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210840602.2A CN115223478A (en) | 2022-07-18 | 2022-07-18 | Intelligent screen device based on quantum well diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210840602.2A CN115223478A (en) | 2022-07-18 | 2022-07-18 | Intelligent screen device based on quantum well diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115223478A true CN115223478A (en) | 2022-10-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210840602.2A Withdrawn CN115223478A (en) | 2022-07-18 | 2022-07-18 | Intelligent screen device based on quantum well diode |
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| Country | Link |
|---|---|
| CN (1) | CN115223478A (en) |
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2022
- 2022-07-18 CN CN202210840602.2A patent/CN115223478A/en not_active Withdrawn
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Effective date of registration: 20230412 Address after: 215211 558 FENHU Road, Wujiang District, Suzhou, Jiangsu Applicant after: Suzhou Liangxin Photoelectric Technology Co.,Ltd. Address before: 210019 unit 3, floor 4, building B4, No. 8, Jialing Jiangdong Street, Jianye District, Nanjing, Jiangsu Province Applicant before: Nanjing Liangxin Information Technology Co.,Ltd. |
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Application publication date: 20221021 |