CN115201143A - Analysis method for package substrate solder mask sundries - Google Patents
Analysis method for package substrate solder mask sundries Download PDFInfo
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- CN115201143A CN115201143A CN202210916888.8A CN202210916888A CN115201143A CN 115201143 A CN115201143 A CN 115201143A CN 202210916888 A CN202210916888 A CN 202210916888A CN 115201143 A CN115201143 A CN 115201143A
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- 229910000679 solder Inorganic materials 0.000 title claims abstract description 138
- 239000000758 substrate Substances 0.000 title claims abstract description 67
- 238000004458 analytical method Methods 0.000 title claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims description 94
- 238000002329 infrared spectrum Methods 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 49
- 238000005520 cutting process Methods 0.000 claims description 22
- 238000010884 ion-beam technique Methods 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005102 attenuated total reflection Methods 0.000 claims description 5
- 238000012360 testing method Methods 0.000 abstract description 10
- 238000010835 comparative analysis Methods 0.000 abstract description 2
- 239000000523 sample Substances 0.000 description 58
- 238000004806 packaging method and process Methods 0.000 description 12
- 230000008021 deposition Effects 0.000 description 6
- 238000010894 electron beam technology Methods 0.000 description 6
- 201000009310 astigmatism Diseases 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
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- Biochemistry (AREA)
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Abstract
The invention provides an analysis method of package substrate solder mask sundries, which comprises the following steps: acquiring component information of the solder mask; acquiring the composition information of the sundries, wherein the composition information of the sundries comprises the composition information of the surface of the sundries and the composition information of the interior of the sundries; acquiring appearance information of the sundries; acquiring the component information of a suspicious object on site; and deducing and obtaining the actual source of the sundries based on the comparative analysis of the composition information of the solder mask layer, the composition information of the sundries, the appearance information of the sundries and the composition information of the on-site suspicious objects. The analysis method of the package substrate sundries in the solder mask layer can rapidly and accurately deduce and obtain the actual source of the sundries in the solder mask layer through the test analysis of the internal component information, the three-dimensional size and the distribution of the solder mask layer sundries, thereby effectively improving the performance and the quality of the package substrate and reducing the production reject ratio of the package substrate.
Description
Technical Field
The invention belongs to the technical field of manufacturing of printed circuit boards or semiconductor integrated circuit packaging substrates, and relates to an analysis method for sundries on a solder mask layer of a packaging substrate.
Background
With the development of the whole chip industry, the trend of pursuing low power consumption, high speed, high density and low voltage is ongoing, so that the demand of the chip field for the packaging substrate is more and more large, and the requirements on the performance and the quality of the packaging substrate are also more and more high. In the process of producing the packaging substrate, solder resist impurities are important factors influencing the performance and the quality of the packaging substrate, and the yield of the production of the packaging substrate is greatly influenced.
For a conventional method for analyzing impurities of a package substrate, an Energy Dispersive Spectroscopy (EDS) analysis and a slicing analysis are performed on a package substrate sample with impurities by a glue pouring method. EDS analysis can only judge the element composition on the surface of impurities, can not directly analyze the elements in the impurities of a sample, and has lower analysis accuracy on ultra-light elements such as C, O and the like. In order to test the elements in the impurities, the cross section of the impurities is generally required to be polished, which causes secondary pollution of polishing powder or polishing solution and increases the risk that the impurities cannot be seen after polishing. The slice analysis is mainly to observe the position of the sundries, namely the height difference between the copper thickness under nickel gold and the copper thickness under the sundries, under an electron microscope until the slice is longitudinally ground until the slice reaches the place containing the sundries, so as to preliminarily judge whether the sundries are generated before the solder resisting process or in the solder resisting process, namely, the slice analysis can only roughly infer the process of generating the sundries, and the type and the source of the sundries cannot be judged. Therefore, the above two conventional methods for analyzing package basic impurities have certain limitations. When the impurities are organic, it is difficult to determine their composition to determine their likely source.
Based on the above situation, for organic matter impurities containing ultra-light element types such as C and O, an infrared spectroscopic microscope can be used to analyze chemical bonds (functional groups) of the impurities, so that the components and sources of the impurities can be accurately determined, and the accuracy and the practicability of failure analysis are improved. However, the infrared spectrum microscope can only detect the infrared absorption spectrum of the surface of the impurity, namely, the surface component of the impurity can only be judged, and the internal component of the impurity cannot be detected. The impurities are likely to be wrapped with a layer of solder resist material after the solder resist process, and only the components of the solder resist material on the surface can be detected if infrared spectrum detection is directly carried out.
Therefore, it is an important technical problem to be solved by those skilled in the art how to provide a method capable of analyzing internal component information of an inclusion in a solder resist of a package substrate and simultaneously acquiring an appearance characteristic of the inclusion so as to quickly and accurately infer a source of the inclusion in the solder resist by comparing and analyzing the internal component and the appearance information of the inclusion in the solder resist with components and appearance information of suspicious objects in the field.
It should be noted that the above background description is only for the convenience of clear and complete description of the technical solutions of the present application and for the understanding of those skilled in the art. Such solutions are not considered to be known to the person skilled in the art merely because they have been set forth in the background section of the present application.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for analyzing impurities in a solder mask of a package substrate, which is used to solve the problem that the sources of impurities cannot be quickly and accurately inferred because only the surface composition information of the impurities in the solder mask can be analyzed, but not the internal composition information and the external appearance information of the impurities in the prior art.
In order to achieve the above and other related objects, the present invention provides a method for analyzing impurities in a solder mask layer of a package substrate, including:
acquiring component information of the solder mask;
acquiring the component information of the sundries, wherein the component information of the sundries comprises the component information of the surface of the sundries and the component information of the interior of the sundries;
acquiring the appearance information of the sundries;
acquiring appearance information and component information of a suspicious object on site;
and comparing and analyzing the composition information of the solder mask layer, the composition information of the sundries, the appearance information of the on-site suspicious objects and the composition information of the on-site suspicious objects, and deducing to obtain the actual sources of the sundries.
Optionally, the method for analyzing the package substrate solder mask impurities includes the following steps:
manufacturing a first sample to be tested based on a packaging substrate to be tested, wherein the first sample to be tested comprises a substrate layer, a solder mask and sundries, and the solder mask is positioned on the substrate layer and covers the sundries;
acquiring the component information of the surface of the sundries and the component information of the solder mask layer based on the first sample to be detected;
comparing the component information of the surface of the sundries with the component information of the solder mask, and if the matching degree of the component information of the surface of the sundries and the component information of the solder mask reaches a preset value, judging that the solder mask is still covered on the surface of the sundries;
removing at least a part of the solder mask on the surface of the sundries to obtain a second sample to be tested;
acquiring component information of the interior of the sundries based on the second sample to be detected;
acquiring appearance information of the sundries;
acquiring the on-site suspicious object based on the appearance information of the sundries, and acquiring the appearance information of the on-site suspicious object;
comparing the appearance information of the sundries with the appearance information of the on-site suspicious objects;
acquiring component information of the on-site suspicious object;
comparing the component information of the sundries with the component information of the on-site suspicious objects;
and deducing the actual source of the sundries based on the comparison result. Optionally, the method for preparing the first sample to be tested comprises grinding by a bare chip to expose the impurities in the solder mask layer.
Optionally, the preset value is greater than or equal to 90%.
Optionally, the method for manufacturing the first sample to be tested based on the package substrate to be tested includes: sampling and bare chip pre-grinding are carried out on the basis of the region of the packaging substrate to be tested, which contains the impurities.
Optionally, the method for acquiring the composition information of the solder mask layer comprises acquiring an infrared spectrum of the solder mask layer through an infrared spectrum microscope; the method for acquiring the component information of the impurities comprises the steps of acquiring the infrared spectrum of the impurities through an infrared spectrum microscope; the method for acquiring the composition information of the on-site suspicious object comprises the step of acquiring the infrared spectrum of the on-site suspicious object through an infrared spectrum microscope.
Optionally, the comparing the information on the components of the surface of the impurity and the information on the components of the solder mask layer includes comparing an infrared spectrum of the surface of the impurity and an infrared spectrum of the solder mask layer, and the characteristic of the compared infrared spectrum includes at least one of a peak position, a wave number, and a peak shape.
Optionally, the method of acquiring an infrared spectrum by the infrared spectroscopy microscope includes at least one of attenuating total reflection, transmission and reflection.
Optionally, the method for removing at least a part of the solder resist layer on the surface of the impurity comprises performing confocal ion cutting by a focused ion beam scanning electron microscope dual-beam system to expose at least a part of the impurity.
Optionally, the method for acquiring the appearance information of the impurities includes analyzing the size and shape of the impurities by using a three-dimensional reconstruction function of a focused ion beam scanning electron microscope dual-beam system.
Optionally, the acquiring the appearance information of the sundries includes the following steps:
finding a region to be analyzed in the second sample to be detected and performing focused ion beam cutting to remove shelters around the region to be analyzed;
acquiring a cutting surface image of the sundries and a three-dimensional acquisition image of an energy spectrometer based on the area to be analyzed;
and generating a three-dimensional image of the sundries based on the cutting surface image of the sundries and the three-dimensional acquisition image of the energy spectrometer so as to obtain the three-dimensional size and distribution of the sundries.
Manufacturing a first sample to be tested based on a packaging substrate to be tested, wherein the first sample to be tested comprises a substrate layer, a solder mask and sundries, and the solder mask is positioned on the substrate layer and covers the sundries;
optionally, the method for analyzing the package substrate solder mask impurities includes the following steps:
acquiring the component information of the surface of the sundries and the component information of the solder mask layer based on the first sample to be detected;
comparing the component information of the surface of the sundries with the component information of the solder mask, and if the matching degree of the component information of the surface of the sundries and the component information of the solder mask does not reach a preset value, judging that the surface of the sundries is not covered with the solder mask any more;
acquiring the appearance information of the sundries;
acquiring the on-site suspicious object based on the appearance information of the sundries, and acquiring the appearance information of the on-site suspicious object;
comparing the appearance information of the sundries with the appearance information of the on-site suspicious objects;
acquiring component information of the on-site suspicious object;
comparing the component information of the sundries with the component information of the on-site suspicious objects;
and deducing the actual source of the sundries based on the comparison result.
As described above, the method for analyzing the package substrate solder mask impurities of the invention comprises the following steps: acquiring component information of the solder mask; acquiring the component information of the sundries, wherein the component information of the sundries comprises the component information of the surface of the sundries and the component information of the interior of the sundries; acquiring appearance information of the sundries; acquiring appearance information and component information of a scene suspicious object; and comparing and analyzing the component information of the solder mask layer, the component information of the sundries, the appearance information of the on-site suspicious objects and the component information of the on-site suspicious objects, and deducing to obtain the actual sources of the sundries. The analysis method of the package substrate solder mask sundries can deduce the actual source of the sundries in the solder mask layer through the test analysis of the internal component information and the three-dimensional size and distribution of the solder mask sundries, thereby effectively improving the performance and the quality of the package substrate and reducing the production reject ratio of the package substrate.
Drawings
Fig. 1 is a schematic flow chart illustrating a method for analyzing impurities in a solder resist layer of a package substrate according to the present invention.
Fig. 2 is a flowchart illustrating a method for analyzing impurities in a solder mask layer of a package substrate according to a first embodiment of the present invention.
Fig. 3 is a flowchart illustrating steps of a method for analyzing impurities in a solder mask layer of a package substrate according to a second embodiment of the present invention.
Detailed Description
The following embodiments of the present invention are provided by way of specific examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
Referring to fig. 1, a schematic flow chart of an analysis method for package substrate solder mask impurities according to the present invention is shown, which includes the following steps:
acquiring component information of the solder mask;
acquiring the component information of the sundries, wherein the component information of the sundries comprises the component information of the surface of the sundries and the component information of the interior of the sundries;
acquiring appearance information of the sundries;
acquiring appearance information and component information of a suspicious object on site;
and deducing and obtaining the actual source of the sundries based on the comparative analysis of the component information of the solder mask, the component information of the sundries, the appearance information of the on-site suspicious objects and the component information of the on-site suspicious objects.
As an example, please refer to fig. 2, which shows a flowchart of the steps of the method for analyzing the package substrate for the solder mask impurities in the present embodiment, including the following steps:
manufacturing a first sample to be tested based on a packaging substrate to be tested, wherein the first sample to be tested comprises a substrate layer, a solder mask and sundries, and the solder mask is positioned on the substrate layer and covers the sundries;
acquiring the component information of the surface of the sundries and the component information of the solder mask layer based on the first sample to be detected;
comparing the component information of the surface of the sundries with the component information of the solder mask, and if the matching degree of the component information of the surface of the sundries and the component information of the solder mask reaches a preset value, judging that the solder mask is still covered on the surface of the sundries;
removing at least a part of the solder mask on the surface of the sundries to obtain a second sample to be tested;
acquiring component information of the interior of the sundries based on the second sample to be detected;
acquiring the appearance information of the sundries;
acquiring the on-site suspicious object based on the appearance information of the sundries, and acquiring the appearance information of the on-site suspicious object;
comparing the appearance information of the sundries with the appearance information of the on-site suspicious objects;
acquiring component information of the on-site suspicious object;
comparing the component information of the sundries with the component information of the on-site suspicious objects;
and deducing the actual source of the sundries based on the comparison result.
As an example, when the preset value is greater than or equal to 90%, that is, when the matching degree between the component information of the surface of the impurity and the component information of the solder resist layer reaches 90%, it may be determined that the surface of the impurity is still covered with the solder resist layer, and at this time, it is only necessary to remove at least a part of the solder resist layer on the surface of the impurity to obtain the internal component information of the impurity.
As an example, the method for manufacturing the first sample to be tested based on the package substrate to be tested includes: sampling is carried out based on the area of the packaging substrate to be tested, wherein the area contains the impurities, and bare chip pre-grinding is carried out, wherein the purpose of bare chip pre-grinding is to observe the impurities through naked eyes, so that the basic position of the impurities is determined to be convenient for the next step.
As an example, the method for acquiring the composition information of the solder mask layer comprises acquiring an infrared spectrum of the solder mask layer through an infrared spectrum microscope; the method for acquiring the component information of the impurities comprises the steps of acquiring the infrared spectrum of the impurities through an infrared spectrum microscope; the method for acquiring the composition information of the on-site suspicious object comprises the step of acquiring the infrared spectrum of the on-site suspicious object through an infrared spectrum microscope. The reason for adopting infrared spectrum to carry out the test analysis of the component information is that an infrared spectrum microscope is suitable for detecting trace samples with the size less than 1mm, the minimum spatial resolution of 1.25 mu m can be achieved, and large-area infrared imaging can be completed in a very short time, so that the component test of tiny impurities contained in a solder mask layer can be realized.
As an example, the comparing the component information of the surface of the impurity and the component information of the solder mask layer includes comparing an infrared spectrum of the surface of the impurity and an infrared spectrum of the solder mask layer, and the characteristic of the compared infrared spectrum includes at least one of a peak position, a wave number, and a peak shape.
As an example, the method of acquiring the infrared spectrum by the infrared spectroscopy microscope includes using at least one of Attenuated Total Reflection (ATR), transmission (TR) or reflection (Ref).
Specifically, the infrared spectrum acquisition by the infrared spectrum microscope comprises the following steps: and placing and fixing the first sample to be detected on a sample stage of an infrared spectrum microscope, finding the position of the impurity in the first sample to be detected, and measuring by adopting at least one of attenuated total reflection, transmission or reflection to obtain an infrared spectrogram of the surface of the impurity in the first sample to be detected. In this embodiment, an array detector may also be used to perform imaging to obtain the sizes and distribution maps of different components on the surface of the impurities in the first sample to be measured. And then obtaining an infrared test spectrogram of the solder mask layer in the first sample to be tested according to the steps.
And comparing the infrared spectrogram of the surface of the impurity with the infrared spectrogram of the solder mask, if the infrared spectrum of the surface of the impurity and more than one of the characteristics of the infrared spectrum of the solder mask, such as peak position, wave number, peak shape and the like are consistent, and the matching degree of the infrared spectrum of the surface of the impurity and the infrared spectrum of the solder mask reaches more than 90%, preliminarily judging that the substance on the surface of the impurity and the solder mask are the same substance, namely, the surface of the impurity is still covered with the solder mask, and if the composition information inside the impurity is obtained, at least one part of the surface of the impurity needs to be removed to perform deeper test analysis. In this embodiment, the matching degree between the infrared spectrum of the surface of the impurity and the infrared spectrum of the solder resist layer reaches 90%, that is, the surface of the impurity is still covered with the solder resist layer, so that at least a part of the solder resist layer on the surface of the impurity must be removed to obtain the component information inside the impurity.
As an example, the method for removing at least a portion of the solder resist layer on the surface of the impurity includes performing confocal Ion Beam (FIB) cutting by a Focused Ion Beam Scanning Electron Microscope (FIB-SEM) dual Beam system to expose at least a portion of the impurity.
As an example, the method for removing at least a part of the solder mask layer on the surface of the impurity comprises performing confocal ion cutting through a focused ion beam scanning electron microscope dual-beam system to expose at least a part of the impurity.
Specifically, the method for removing at least a part of the solder mask layer on the surface of the sundries comprises the following steps: the first sample to be tested is subjected to pretreatment such as sampling, numbering, position prejudging and marking, metal spraying and the like, so that the first sample to be tested is easy to position and has good conductivity; fixing the first to-be-detected sample subjected to pretreatment on a sample table with an inclination angle of 54 degrees by using a conductive adhesive tape, and then placing the sample table into a sample bin for vacuumizing; when the vacuum degree is less than a certain value, opening an electron beam, adjusting the position of a sample stage, adjusting a region to be measured of the first sample to be measured to be right below a pole shoe of the electron beam, adjusting the Z-axis working distance to the position of a confocal point, and adjusting parameters such as voltage, current, an observation mode, a probe, a focal length, astigmatism, contrast, brightness and the like of the electron beam; rotating a pre-tilt sample table of 54 degrees to a certain angle to ensure that the ion beam and the surface of the first sample to be detected are kept horizontal, finding out the position to be cut on the first sample to be detected, opening the ion beam, and adjusting parameters such as ion beam voltage, current, observation mode, probe, focal length, astigmatism, contrast, brightness and the like; finding a cutting position, setting deposition parameters, and performing carbon deposition or tungsten deposition at the cutting position; and selecting a cutting or processing area, setting cutting parameters, performing rough cutting, performing fine trimming, and finally removing at least one part of the solder mask on the surface of the sundries to obtain a second sample to be detected.
And after at least one part of the solder mask on the surface of the sundries is removed, measuring the part of the sundries, from which the solder mask is removed, by adopting attenuated total reflection, transmission or reflection through an infrared spectrum microscope to obtain an infrared test spectrogram of the sundries, so as to obtain the component information in the sundries.
By way of example, the method for acquiring the appearance information of the impurities comprises analyzing the size and the shape of the impurities by using a three-dimensional reconstruction function of a focused ion beam scanning electron microscope dual-beam system. The double-beam system of the focused ion beam scanning electron microscope can acquire various three-dimensional information in high quality and full automation.
As an example, the acquiring the appearance information of the sundries comprises the following steps: finding a region to be analyzed in the second sample to be detected and performing focused ion beam cutting to remove shelters around the region to be analyzed; acquiring a cutting surface image of the sundries and a three-dimensional acquisition image of an energy spectrometer based on the area to be analyzed; and generating a three-dimensional image of the sundries based on the cutting surface image of the sundries and the three-dimensional acquisition image of the energy spectrometer so as to obtain the three-dimensional size and distribution of the sundries.
Specifically, the step of obtaining the appearance information of the sundries is as follows: carrying out metal spraying treatment on the second sample to be detected to ensure good conductivity of the second sample to be detected; fixing the second sample to be tested after the pretreatment on a sample table with an inclination angle of 54 degrees by using a conductive adhesive tape, and then placing the sample table into a sample bin for vacuumizing; when the vacuum degree is smaller than a certain value, opening the electron beam, adjusting the position of the sample stage, adjusting the area to be measured of the second sample to be measured to be right below the electron beam pole shoe, adjusting the Z-axis working distance to the position of a confocal point, and adjusting parameters such as voltage, current, an observation mode, a probe, focal length, astigmatism, contrast, brightness and the like of the electron beam; rotating the pre-tilt sample stage of 54 degrees to a certain angle to ensure that the ion beam is vertical to the surface of the second sample to be detected, finding a region to be analyzed, opening the ion beam, and adjusting parameters such as the voltage, the current, the observation mode, the probe, the focal length, the astigmatism, the contrast, the brightness and the like of the ion beam; setting deposition parameters at the peripheral edges of the region to be analyzed, performing carbon deposition or tungsten deposition at a cutting position, and then performing confocal ion beam cutting to remove shelters around the region to be analyzed; opening three-dimensional reconstruction software of a confocal ion beam scanning electron microscope dual-beam system, and setting parameters such as the size of a processing area, a positioning mode, a cutting mode and the like; setting parameters such as each cutting section image acquisition and energy spectrometer acquisition; and obtaining the three-dimensional image of the sundries and the three-dimensional acquisition image of the energy spectrometer after the operation is finished. And then reconstructing the three-dimensional image of the collected impurities and the three-dimensional collected image of the energy spectrometer by using three-dimensional reconstruction software carried by a double-beam system of the confocal ion beam scanning electron microscope to generate a three-dimensional image of the impurities. The three-dimensional size and distribution of the sundries can be analyzed from the obtained three-dimensional image of the sundries.
According to the three-dimensional size and distribution of the sundries obtained through the test, on-site suspicious objects with similar sizes and shapes are searched and sampled in a production site, an infrared spectrogram of the on-site suspicious objects is obtained through an infrared spectrum microscope, then the infrared spectrogram inside the sundries is compared with the infrared spectrogram of the on-site suspicious objects, if at least one of the characteristics of the infrared spectrums of the on-site suspicious objects, such as peak position, wave number and peak shape, of the infrared spectrums of the on-site suspicious objects is consistent, and the matching degree of the infrared spectrums of the on-site suspicious objects reaches more than 90%, the sundries and the on-site suspicious objects can be judged to be the same substance, and therefore the actual sources of the sundries can be deduced according to the positions of the on-site suspicious objects.
Example two
The embodiment provides an analysis method for package substrate solder mask sundries, which is different from the first embodiment in that the matching degree of the component information of the surface of the sundries and the component information of the solder mask layer in the first embodiment reaches a preset value, at least a part of the solder mask layer on the surface of the sundries needs to be removed to obtain the component information of the interior of the sundries, the matching degree of the component information of the surface of the sundries and the component information of the solder mask layer in the first embodiment does not reach the preset value, at the moment, the component information of the surface of the sundries is the component information of the interior of the sundries, and the next step can be carried out without removing at least a part of the solder mask layer on the surface of the sundries.
Referring to fig. 3, a flowchart illustrating steps of the method for analyzing the package substrate for the impurities in the solder mask layer in the embodiment is shown, which includes the following steps:
manufacturing a first sample to be tested based on a package substrate to be tested, wherein the first sample to be tested comprises a substrate layer, a solder mask layer and sundries, and the solder mask layer is positioned on the substrate layer and covers the sundries;
acquiring the component information of the surface of the sundries and the component information of the solder mask layer based on the first sample to be detected;
comparing the component information of the surface of the sundries with the component information of the solder mask, and if the matching degree of the component information of the surface of the sundries and the component information of the solder mask does not reach a preset value, judging that the surface of the sundries is not covered with the solder mask any more;
acquiring appearance information of the sundries;
acquiring the on-site suspicious object based on the appearance information of the sundries, and acquiring the appearance information of the on-site suspicious object;
comparing the appearance information of the sundries with the appearance information of the on-site suspicious objects;
acquiring component information of the on-site suspicious object;
comparing the component information of the sundries with the component information of the on-site suspicious objects;
and deducing the actual source of the sundries based on the comparison result.
As an example, the preset value is greater than or equal to 90%, in this embodiment, the matching degree between the component information of the surface of the impurity and the component information of the solder resist layer does not reach 90%, which indicates that the surface of the impurity is no longer covered with the solder resist layer, and the component information of the surface of the impurity is the component information of the interior of the impurity. At least a part of the solder mask on the surface of the sundries does not need to be removed to obtain the composition information inside the sundries, the appearance information of the sundries can be directly obtained continuously from the first sample to be detected, and the first sample to be detected can be directly used as a second sample to be detected in the next step without being processed.
In summary, the method for analyzing the package substrate for the impurities in the solder mask layer comprises the following steps: acquiring component information of the solder mask; acquiring the composition information of the sundries, wherein the composition information of the sundries comprises the composition information of the surface of the sundries and the composition information of the interior of the sundries; acquiring appearance information of the sundries; acquiring appearance information and component information of a suspicious object on site; and comparing and analyzing the composition information of the solder mask layer, the composition information of the sundries, the appearance information of the on-site suspicious objects and the composition information of the on-site suspicious objects, and deducing to obtain the actual sources of the sundries. The analysis method of the package substrate solder mask sundries can deduce the actual source of the sundries in the solder mask layer through the test analysis of the internal component information and the three-dimensional size and distribution of the solder mask sundries, thereby effectively improving the performance and the quality of the package substrate and reducing the production reject ratio of the package substrate. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An analysis method for sundries of a solder mask layer of a package substrate is characterized by comprising the following steps:
acquiring component information of the solder mask;
acquiring the component information of the sundries, wherein the component information of the sundries comprises the component information of the surface of the sundries and the component information of the interior of the sundries;
acquiring appearance information of the sundries;
acquiring appearance information and component information of a suspicious object on site;
and comparing and analyzing the composition information of the solder mask layer, the composition information of the sundries, the appearance information of the on-site suspicious objects and the composition information of the on-site suspicious objects, and deducing to obtain the actual sources of the sundries.
2. The method for analyzing the package substrate for the inclusion of the solder mask layer according to claim 1, comprising the steps of:
manufacturing a first sample to be tested based on a package substrate to be tested, wherein the first sample to be tested comprises a substrate layer, a solder mask layer and sundries, and the solder mask layer is positioned on the substrate layer and covers the sundries;
acquiring the component information of the surface of the sundries and the component information of the solder mask layer based on the first sample to be detected;
comparing the component information of the surface of the sundries with the component information of the solder mask, and if the matching degree of the component information of the surface of the sundries and the component information of the solder mask reaches a preset value, judging that the solder mask is still covered on the surface of the sundries;
removing at least a part of the solder mask on the surface of the sundries to obtain a second sample to be detected;
acquiring component information of the interior of the sundries based on the second sample to be detected;
acquiring the appearance information of the sundries;
acquiring the on-site suspicious object based on the appearance information of the sundries, and acquiring the appearance information of the on-site suspicious object;
comparing the appearance information of the sundries with the appearance information of the on-site suspicious objects;
acquiring component information of the on-site suspicious object;
comparing the component information of the sundries with the component information of the on-site suspicious objects;
and deducing the actual source of the sundries based on the comparison result.
3. The method for analyzing the package substrate for the inclusion of the solder mask layer according to claim 2, wherein: the preset value is greater than or equal to 90%.
4. The method for analyzing the package substrate solder mask impurities according to claim 1 or 2, characterized in that: the method for acquiring the component information of the solder mask layer comprises the steps of acquiring the infrared spectrum of the solder mask layer through an infrared spectrum microscope; the method for acquiring the component information of the impurities comprises the steps of acquiring the infrared spectrum of the impurities through an infrared spectrum microscope; the method for acquiring the composition information of the on-site suspicious object comprises the step of acquiring the infrared spectrum of the on-site suspicious object through an infrared spectrum microscope.
5. The method for analyzing the package substrate solder mask impurities as claimed in claim 4, wherein: the comparison of the component information of the surface of the impurity and the component information of the solder mask layer comprises comparison of an infrared spectrum of the surface of the impurity and an infrared spectrum of the solder mask layer, and the characteristics of the compared infrared spectrum comprise at least one of peak position, wave number and peak shape.
6. The method for analyzing the package substrate solder mask impurities as claimed in claim 4, wherein: the method for acquiring the infrared spectrum by the infrared spectrum microscope comprises at least one of attenuated total reflection, transmission and reflection.
7. The method for analyzing the package substrate for the inclusion of the solder mask layer according to claim 2, wherein: the method for removing at least a part of the solder mask layer on the surface of the impurity comprises the step of carrying out confocal ion cutting through a focused ion beam scanning electron microscope dual-beam system so as to expose at least a part of the impurity.
8. The analysis method for the package substrate solder mask impurities according to claim 1 or 2, characterized in that: the method for acquiring the appearance information of the impurities comprises the step of analyzing the size and the shape of the impurities by utilizing the three-dimensional reconstruction function of a focused ion beam scanning electron microscope double-beam system.
9. The method for analyzing the package substrate solder mask impurities according to claim 2, wherein the step of obtaining the appearance information of the impurities comprises the following steps:
finding a region to be analyzed in the second sample to be detected and performing focused ion beam cutting to remove shelters around the region to be analyzed;
acquiring a cutting surface image of the sundries and a three-dimensional acquisition image of an energy spectrometer based on the area to be analyzed;
and generating a three-dimensional image of the sundries based on the cutting surface image of the sundries and the three-dimensional acquisition image of the energy spectrometer so as to obtain the three-dimensional size and distribution of the sundries.
10. The method for analyzing the package substrate for the inclusion of the solder mask layer according to claim 1, comprising the steps of:
manufacturing a first sample to be tested based on a package substrate to be tested, wherein the first sample to be tested comprises a substrate layer, a solder mask layer and sundries, and the solder mask layer is positioned on the substrate layer and covers the sundries;
acquiring the component information of the surface of the sundries and the component information of the solder mask layer based on the first sample to be detected;
comparing the component information of the surface of the sundries with the component information of the solder mask, and if the matching degree of the component information of the surface of the sundries and the component information of the solder mask does not reach a preset value, judging that the surface of the sundries is not covered with the solder mask;
acquiring appearance information of the sundries;
acquiring the on-site suspicious object based on the appearance information of the sundries, and acquiring the appearance information of the on-site suspicious object;
comparing the appearance information of the sundries with the appearance information of the on-site suspicious objects;
acquiring the component information of the on-site suspicious object;
comparing the component information of the sundries with the component information of the on-site suspicious objects;
and deducing the actual source of the sundries based on the comparison result.
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| CN202210916888.8A CN115201143A (en) | 2022-08-01 | 2022-08-01 | Analysis method for package substrate solder mask sundries |
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| CN202210916888.8A CN115201143A (en) | 2022-08-01 | 2022-08-01 | Analysis method for package substrate solder mask sundries |
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