CN115200832A - Multi-mode mechanical measurement device for immersion flow field - Google Patents
Multi-mode mechanical measurement device for immersion flow field Download PDFInfo
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- CN115200832A CN115200832A CN202210556075.2A CN202210556075A CN115200832A CN 115200832 A CN115200832 A CN 115200832A CN 202210556075 A CN202210556075 A CN 202210556075A CN 115200832 A CN115200832 A CN 115200832A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M10/00—Hydrodynamic testing; Arrangements in or on ship-testing tanks or water tunnels
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Abstract
The invention discloses a multi-mode mechanical measurement device for an immersed flow field. The device is characterized by further comprising a lead connecting layer and a silicon sensing film layer, wherein the lead connecting layer is arranged on the bottom surface of the simulated projection objective mechanism, the silicon sensing film layer is arranged on the bottom surface of the lead connecting layer, and a forward stress sensitive region for measuring forward stress and a tangential stress sensitive region for measuring tangential stress are arranged in the bottom surface of the simulated projection objective mechanism, which is passed by an immersion flow field, and the corresponding lead connecting layer and the silicon sensing film layer. The invention integrates direct measurement of the forward stress and the tangential stress of the immersed flow field, optimizes the problem that the conventional pressure measurement device can introduce disturbance to the measured flow field, and reduces the influence of the arrangement of the sensor on the inherent temperature field and the pressure field of the immersed flow field.
Description
Technical Field
The invention relates to an immersion flow field measuring device of a photoetching machine in the technical field of immersion photoetching, in particular to a sensing device for multi-mode mechanical measurement of an immersion flow field and a preparation method thereof.
Background
Photolithography is a critical step in the fabrication of integrated circuits, and directly determines the characteristic line width of a semiconductor chip. In the development of optical lithography, immersion lithography is a very widely used technique below the 45nm node. Compared with the traditional dry-type photoetching technology, the medium filled in the gap between the last-stage projection objective of the photoetching system and the substrate to be photoetched is air, and the medium filled in the gap between the last-stage projection objective of the immersion photoetching technology and the substrate is liquid. The principle is to increase the numerical aperture and the focal depth of the projection objective by increasing the refractive index of the gap medium, thereby obtaining smaller characteristic line width. Immersion lithography is characterized by the fact that mechanical parts such as a light source, a mask, a projection objective and the like are slightly changed on the basis of developing a mature dry lithography technology, and the improvement of the lithography resolution is remarkable.
However, the introduction of immersion liquid also entails problems, of which the problem of the pressure distribution at the lower surface of the projection objective is of concern in the present invention. Because the liquid needs to be constantly refreshed by flowing due to the effects of photoresist contamination and exposure heat during exposure, the immersion liquid must also be maintained at a relatively constant pressure while in the flow. If the pressure applied to the final stage projection objective is not a constant value, the displacement and deformation of the objective will be caused, which causes the objective to be displaced from the working position and causes an exposure error. Therefore, it is particularly important to detect the stress distribution at the interface between the immersion liquid and the lens.
The sensing device for measuring the stress of the immersed flow field at present can only measure the forward stress generally, the direct detection technology of the shear stress is very deficient, and a numerical simulation or forward stress equivalent mode is generally adopted. The shear stress mainly has two main points, namely, the left and right position of the objective lens can be deviated, and the birefringence phenomenon can be generated, namely, the phenomenon that light is incident into an anisotropic medium and is decomposed into two beams of refracted light along different directions. In addition, the distance between the lower surface of the projection objective and the substrate is generally less than 3mm, and the typical flat slit flow field is provided. Any tiny change of the flow field boundary can affect the state of the inherent flow field, so that the real inherent flow field pressure distribution can not be measured, if a probe is adopted for invasive measurement, the flow field boundary can be changed, and if a film type pressure sensor is adopted, the influence of a pressure guide hole can be brought. In the existing solution for measuring the forward pressure of the submerged flow field, the problem of interference of a measuring device on the flow field and the problem of pressure transfer from the boundary of the flow field to a sensing element of the measuring device are not solved well.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a sensing device for multi-mode mechanical measurement of an immersed flow field and a preparation method thereof, wherein the sensing device comprises the direct measurement of the forward stress and the tangential stress of the flow field, and the direct measurement of the forward stress and the tangential stress of the immersed flow field is integrated, so that the problem that the conventional pressure measuring device can cause disturbance to the measured flow field is solved, and the influence of the arrangement of a sensor on the inherent temperature field and the pressure field of the immersed flow field is reduced.
The invention is realized by the following technical scheme:
the invention comprises a simulation projection objective mechanism, a substrate and a base; the substrate is positioned below the simulated projection objective mechanism, the substrate is arranged on the base, and the immersion flow field passes through the space between the simulated projection objective mechanism and the substrate; the device is characterized by further comprising a lead connecting layer and a silicon sensing film layer, wherein the lead connecting layer is arranged on the bottom surface of the simulated projection objective mechanism, the silicon sensing film layer is arranged on the bottom surface of the lead connecting layer, and a forward stress sensitive region for measuring forward stress and a tangential stress sensitive region for measuring tangential stress are arranged in the bottom surface of the simulated projection objective mechanism, which is passed by an immersion flow field, and the corresponding lead connecting layer and the silicon sensing film layer.
The positive stress sensitive area comprises a central cavity and a plurality of side cavities, the central cavity is arranged in the lead connecting layer and the analog projection objective mechanism, the side cavities are used for containing gold wires, a through groove is formed in the lead connecting layer in the middle of the positive stress sensitive area and serves as the central cavity, the side cavities are arranged around the central cavity, each side cavity is formed by communicating another through groove formed in the lead connecting layer with a groove formed in the bottom of the analog projection objective mechanism, the lead connecting layer is partially exposed out of the step on the upper surface in each side cavity, and a lead electrode is arranged on each step; and a positive resistance electrode structure is arranged on the upper surface of the silicon sensing thin film layer between each side cavity and the central cavity, and the positive resistance electrode structure on the silicon sensing thin film layer is connected with the lead connecting layer through gold wires.
Two side cavities are arranged and are respectively positioned at two symmetrical sides of the central cavity, and the piezoresistors of the two positive resistance electrode structures of the two side cavities are arranged in the central area of the central cavity at intervals on the same straight line.
The positive resistance electrode structure comprises a piezoresistor and an electrode, the piezoresistor is arranged at the center of the upper surface of a silicon sensing thin film layer in a central cavity, the electrode is arranged on the upper surface of the silicon sensing thin film layer and extends to the central cavity from a side cavity, the piezoresistor is connected with one end of the electrode, the other end of the electrode is connected with a lead electrode on the upper surface of a lead connecting layer through a gold thread, and the gold thread is used for connecting the silicon sensing thin film layer and the lead connecting layer.
The tangential stress sensitive area comprises a central cavity and a plurality of side cavities, the central cavity is arranged in the lead connecting layer and the analog projection objective mechanism, the side cavities are used for containing gold wires, a through groove is formed in the lead connecting layer in the middle of the tangential stress sensitive area and serves as the central cavity, the side cavities are arranged around the central cavity, each side cavity is formed by communicating another through groove formed in the lead connecting layer with a groove formed in the bottom of the analog projection objective mechanism, the lead connecting layer is partially exposed out of a step on the upper surface in each side cavity, and a lead electrode is arranged on each step; a tangential resistance electrode structure is arranged between each side cavity and the central cavity, a floating element is processed and arranged on the silicon sensing film layer in the central cavity and connected with the tangential resistance electrode structure, and the tangential resistance electrode structure is connected with the lead connecting layer through a gold thread.
A through groove is formed in the silicon sensing thin film layer in the central cavity, a floating element is arranged in the through groove, and the floating element is connected with the wall of the through groove through surrounding cantilevers.
Four side cavities are arranged, the four side cavities are respectively positioned at four symmetrical corners of the central cavity, the floating element is respectively connected with four corners of the through groove through cantilevers at the four corners around the floating element, and four piezoresistors of the tangential resistor electrode structures of the four side cavities are respectively arranged on the cantilevers at the four corners.
The tangential resistance electrode structure comprises a piezoresistor and an electrode, the piezoresistor is fixedly arranged at a cantilever of a floating element in the central cavity, the electrode is arranged on the upper surface of the silicon sensing thin film layer and extends to the central cavity from the side cavity, the piezoresistor is connected with one end of the electrode, the other end of the electrode is connected with a lead electrode on the upper surface of the lead connecting layer through a gold thread, and the gold thread is used for connecting the silicon sensing thin film layer and the lead connecting layer.
The lower surface which is directly contacted with the immersed flow field can be kept flat through the structural arrangement of the invention, the boundary of the flow field can not be damaged, the transmission of pressure from the flow field to a sensitive element can not be influenced, and the measurement is more accurate.
The invention has the beneficial effects that:
the invention can integrate the measurement of the forward stress and the tangential stress, solves the technical problem that the tangential stress of an immersion flow field in a tiny gap can not be directly measured, and has important effect on the stability of the immersion lithography projection objective.
The invention has the advantage that the influence of the pressure guide hole of the traditional pressure sensor is eliminated. When the mechanical parameters of the immersion flow field are measured, the boundary of the flow field cannot be damaged, and the influence of the arrangement of the sensors on the inherent temperature field and the inherent pressure field of the flow field is reduced.
Drawings
The invention is further explained below with reference to the figures and examples;
FIG. 1 is a diagram of the manner in which a conventional thin film pressure sensor is used for measuring the stress distribution of an immersion flow field;
FIG. 2 is a cross-sectional view of the use of the submerged flow field multi-modal mechanical measurement device of the present invention;
FIG. 3 is a schematic illustration of the location of the forward and tangential stress sensitive regions;
FIG. 4 is a partial view of a forward and tangential stress sensitive area;
FIG. 5 is a process flow diagram of a silicon sensing film and a method for manufacturing an immersed flow field multi-modal mechanical measurement device according to the present invention.
In the figure: the device comprises an analog projection objective mechanism 1, an immersion flow field 2, a substrate 3, a base 4, a pressure sensor unit 5, a forward stress sensitive region 6, a tangential stress sensitive region 7, a lead connecting layer 8 and a silicon sensing film layer 9; the lower surface 11, a pressure guide hole 51 and a sensitive element 52; a sensing thin film layer 9 and a silicon sensing thin film layer lower surface 91; a central cavity 61, a piezoresistor 62, an electrode 63, a gold wire 64 and a side cavity 65; floating element 71, piezoresistor 72, electrode 73, gold wire 74, side cavity 75 for holding gold wire, and central cavity 76.
Detailed Description
The invention is further described with reference to the accompanying drawings and the detailed description.
A conventional immersed flow field pressure measurement method is shown in fig. 1, and a thin film type MEMS pressure sensor is mounted on an analog projection objective mechanism 1. In this way, the problem of the pressure leading hole 51 is inevitably caused on the lower surface 11 of the analog projection objective mechanism 1, the lower surface 11 of the analog projection objective mechanism 1 which is directly contacted with the immersion flow field 2 is not flat, gas residue is generated when the immersion flow field 2 is injected, a gas column is formed, the vein shape of the flow field is damaged, and the transmission of pressure from the flow field to the sensitive element 52 is influenced.
As shown in fig. 2 (a), the apparatus embodying the present invention comprises an analog projection objective mechanism 1, a substrate 3 and a base 4; the substrate 3 is positioned below the simulated projection objective mechanism 1, the substrate 3 is arranged on the base 4, and the immersion flow field 2 passes between the simulated projection objective mechanism 1 and the substrate 3; the device is characterized by further comprising a lead connecting layer 8 and a silicon sensing film layer 9, wherein the lead connecting layer 8 and the silicon sensing film layer 9 are arranged on the bottom surface of the analog projection objective mechanism 1, the lead connecting layer 8 is arranged on the bottom surface of the analog projection objective mechanism 1, the silicon sensing film layer 9 is arranged on the bottom surface of the lead connecting layer 8, a forward stress sensitive region 6 used for measuring forward stress and a tangential stress sensitive region 7 used for measuring tangential stress are arranged in the bottom surface of the analog projection objective mechanism 1, through which the immersion flow field 2 passes, and the silicon sensing film layer 9, and the sensitive regions are directly contacted with the immersion flow field 2.
The silicon sensing film layer 9 is made of silicon material.
As shown in fig. 2 (b), the forward stress sensitive region 6 includes a central cavity 61 disposed in the lead connecting layer 8 and the analog projection objective mechanism 1 and a plurality of side cavities 65 for accommodating gold wires 64, the lead connecting layer 8 in the middle of the forward stress sensitive region 6 is provided with a through slot as the central cavity 61, the plurality of side cavities 65 are disposed around the central cavity 61, the side cavities 65 are formed by communicating another through slot provided on the lead connecting layer 8 with a groove provided on the bottom of the analog projection objective mechanism 1, the inside of the side cavities 65 partially exposes the lead connecting layer 8 to an upper surface step, and lead electrodes are disposed on the step; the lead electrode is led out to an external signal processing circuit through a wire inside the lead connection layer 8. Between each side cavity 65 and the central cavity 61, the upper surface of the silicon sensing film layer 9 is provided with a forward resistance electrode structure, and the resistance electrode structure on the silicon sensing film layer 9 is connected with the lead connecting layer 8 through a gold wire 64.
In the specific implementation, two side cavities 65 are provided, the two side cavities 65 are respectively located at two symmetrical sides of the central cavity 61, and the piezoresistors 62 of the two forward resistance electrode structures of the two side cavities 65 are arranged at the center of the central cavity 61 at intervals on the same straight line.
The bottom surface direction of the central cavity 61 is blocked by the silicon sensing film layer 9 and is not communicated with the immersion flow field 2, and the central cavity 61 can be communicated into the bottom surface of the analog projection objective mechanism 1 and is communicated into a cavity in the analog projection objective mechanism 1.
As shown in fig. 4 (a), the forward resistance electrode structure includes a piezoresistor 62, an electrode 63, and a gold wire 64 for connecting the silicon sensing thin film layer 9 and the lead connection layer 8, the piezoresistor 62 is disposed at the center of the top surface of the silicon sensing thin film layer 9 in the central cavity 61, the electrode 63 is disposed on the upper surface of the silicon sensing thin film layer 9 and extends from the side cavity 65 to the central cavity 61, the piezoresistor 62 is connected with one end of the electrode 63, and the other end of the electrode 63 is connected with the lead electrode on the upper surface of the lead connection layer 8 via the gold wire 64, and then led out to an external signal processing circuit.
The forward stress of the immersed flow field 2 is vertically applied to the lower surface of the silicon sensing film layer 9, the resistance value of the silicon sensing film layer is further changed by sensing through the piezoresistor 62 in the forward resistor electrode structure of the forward stress sensitive area 6, and the change of the forward stress is obtained by detecting the change of the resistance value of the piezoresistor 62, so that the forward stress is further obtained.
As shown in fig. 2 (c), the tangential stress sensitive region 7 includes a central cavity 76 provided in the lead connecting layer 8 and the analog projection objective mechanism 1 and a plurality of side cavities 75 for accommodating gold wires 74, the lead connecting layer 8 in the middle of the tangential stress sensitive region 7 is provided with a through groove as the central cavity 76, the plurality of side cavities 75 are arranged around the central cavity 76, the side cavities 75 are formed by communicating another through groove provided on the lead connecting layer 8 with a groove provided on the bottom of the analog projection objective mechanism 1, the inside of the side cavities 75 exposes a part of the lead connecting layer 8 out of a step on the upper surface, and lead electrodes are provided on the step; the lead electrode is led out to an external signal processing circuit through a wire inside the lead connection layer 8. A tangential resistance electrode structure is arranged between each side cavity 75 and the central cavity 76, a floating element 71 is processed on the silicon sensing film layer 9 in the central cavity 76, the floating element 71 is connected with the tangential resistance electrode structure, and the tangential resistance electrode structure is connected with the lead connecting layer 8 through a gold wire 74.
A through slot is formed in the silicon sensing membrane layer 9 in the central cavity 76, a floating element 71 is arranged in the through slot, and the floating element 71 is connected with the wall of the through slot through surrounding cantilevers.
In a specific implementation, the floating element 71, the cantilever and the silicon sensing thin film layer 9 are made of the same material and are formed by etching.
The bottom surface direction of the central cavity 76 is blocked by the silicon sensing film layer 9 and is not communicated with the immersion flow field 2, and the central cavity 76 is not communicated with the bottom surface of the analog projection objective mechanism 1 and is not communicated with a cavity in the analog projection objective mechanism 1.
In the specific implementation, four side cavities 75 are provided, the four side cavities 75 are respectively located at four symmetrical corners of the central cavity 76, the floating element 71 is respectively connected with four corners of the through-slot wall through cantilevers at four corners around, and the four piezoresistors 72 of the tangential resistor electrode structures of the four side cavities 75 are respectively arranged at the roots of the cantilevers at the four corners.
As shown in fig. 4 (b), the tangential resistance electrode structure includes a piezo-resistor 72, an electrode 73, and a gold wire 74 for connecting the silicon sensing thin film layer 9 and the lead connection layer 8, the piezo-resistor 72 is fixedly disposed at the cantilever of the floating element 71 in the central cavity 76, the piezo-resistor is at the root of the cantilever of the floating element 71, the electrode 73 is disposed on the upper surface of the silicon sensing thin film layer 9 and extends from the side cavity 75 to the central cavity 76, the piezo-resistor 72 is connected with one end of the electrode 73, and the other end of the electrode 73 is connected with the lead electrode on the upper surface of the lead connection layer 8 via the gold wire 74, and then led out to an external signal processing circuit.
Tangential stress of the immersion flow field 2 is applied to the floating element 71 of the silicon sensing film layer 9 in parallel, the resistance value of the floating element is further changed by sensing the piezoresistor 72 in the tangential resistor electrode structure of the tangential stress sensitive area 7, and the change of the tangential stress is obtained by detecting the change of the resistance value of the piezoresistor 72, so that the tangential stress is further obtained.
In specific implementation, the mechanical connection mode between the sensing thin film layer and the lead connection layer is glue adhesion, and the electrical connection mode is gold wire bonding; the lead connecting layer is a printed circuit board with a through groove, and the lead connecting layer and the analog projection objective mechanism are bonded by glue. The silicon sensing film layer is smooth and flat on one side in contact with the immersion flow field.
In this embodiment, the distribution positions of the forward stress sensitive region 6 and the tangential stress sensitive region 7 on the lower surface 91 of the silicon sensing thin film layer are shown in fig. 3, and the partial structures of the forward resistive electrode structure of the forward stress sensitive region and the tangential resistive electrode structure of the tangential stress sensitive region are shown in fig. 4 (a) and fig. 4 (b).
In specific implementation, the stress sensor comprises a plurality of forward stress sensitive regions 6 and a plurality of tangential stress sensitive regions 7, wherein the forward stress sensitive regions 6 and the tangential stress sensitive regions 7 are arranged at intervals, and can be sequentially and alternately arranged at intervals.
The thickness of the silicon sensing film layer is 10-100 um, and the diameter of the silicon sensing film layer is the same as that of the analog projection objective mechanism. The positive stress sensitive area and the tangential stress sensitive area are defined according to measuring points required by the stress distribution of the flow field, and the diameter of each sensitive area is not more than 2 mm. The positive stress sensitive area is formed by manufacturing a piezoresistor on the silicon film in an ion implantation mode, an electrode is manufactured in a metal deposition mode, the piezoresistor and a cavity at the corresponding position of the lead connecting layer form the positive stress sensitive area, the cavity is communicated with an area capable of providing stable reference pressure, and the electrode is electrically interconnected with the lead connecting layer in a gold wire bonding mode. Through the mode, the cavity of the positive stress sensitive area and the lead are on the same side, namely the side in contact with the lead connecting layer, so that the other side can smoothly and flatly contact a flow field, and the pressure transmission problem caused by a pressure leading hole of a traditional pressure sensor is eliminated.
The tangential stress sensitive area comprises a floating element, the measurement principle is that when fluid flows through the tangential stress sensitive area, the tangential force can cause the tiny displacement of the floating element, and the tangential force applied to the floating element can be obtained by measuring the change of the piezoresistor at the root of the floating element. Similarly, the piezoresistor is manufactured by ion implantation, the electrode is manufactured by metal deposition, and the floating element is manufactured by dry etching. The processing process of the forward stress sensitive area and the tangential stress sensitive area can be well unified, and only the forward stress sensitive area is required to be protected when the floating element is manufactured, and then the piezoresistor and the electrode are manufactured simultaneously.
Preferably, the ion implantation material of the piezoresistor is boron, the electrode material for metal deposition is gold, and the metal deposition mode is sputtering.
In this embodiment, the fabrication and packaging of the silicon sensing thin film layer are shown in fig. 5, and include the following process flows:
as shown in fig. 5 (a), the silicon sensing thin film layer 9 is formed by using the SOI silicon wafer fabrication, and the SOI top silicon thickness is the same as the silicon sensing thin film thickness.
As shown in fig. 5 (b), a layer of aluminum with a thickness of 100nm is sputtered on the surface of the silicon sensing thin film layer 9 as a mask.
As shown in fig. 5 (c), the shape of the floating element 71 of the tangential stress sensitive region 7 is defined by photolithography, and after development, the aluminum mask of the exposed portion is removed by phosphoric acid, and the photoresist is cleaned.
As shown in fig. 5 (d), the floating element 71 of the tangential stress sensitive region 7 is fabricated by means of dry etching using inductively coupled plasma, and then the aluminum mask is removed.
As shown in fig. 5 (e), the piezoresistors 62, 72 of the tangential stress sensitive region 7 and the forward stress sensitive region 6 are defined in a photolithographic manner.
As shown in fig. 5 (f), boron ion implantation is performed to form the piezoresistors 62, 72, and then the photoresist is removed and annealing is performed.
As shown in fig. 5 (g), the electrode shapes of the tangential stress sensitive region 7 and the forward stress sensitive region 6 are defined by means of photolithography.
As shown in fig. 5 (h), gold is sputtered on the surface by metal deposition, and then the photoresist is removed to form electrodes 63 and 73.
As shown in fig. 5 (i), the SOI wafer and the wire connection layer 8 are fixed by glue and electrically interconnected by bonding with gold wires 64 and 74.
As shown in fig. 5 (j), the supporting silicon wafer on the back of the SOI is removed by means of inductive coupling dry etching, only the silicon sensing thin film layer is left, and then the combined silicon sensing thin film layer 9 and the lead connecting layer 8 are fixed to the analog projection objective mechanism by glue.
The foregoing summary and structure are provided to explain the principles, general features, and advantages of the product and to enable others skilled in the art to understand the invention. The foregoing examples and description have been presented to illustrate the principles of the invention and are intended to provide various changes and modifications within the spirit and scope of the invention as claimed. The claimed invention is defined by the following claims and their equivalents.
Claims (8)
1. An immersed flow field multi-mode mechanical measurement device comprises a simulated projection objective mechanism (1), a substrate (3) and a base (4); the substrate (3) is positioned below the simulated projection objective mechanism (1), the substrate (3) is arranged on the base (4), and the immersion flow field (2) passes between the simulated projection objective mechanism (1) and the substrate (3); the method is characterized in that: the device is characterized by further comprising a lead connecting layer (8) and a silicon sensing film layer (9) which are arranged on the bottom surface of the analog projection objective mechanism (1), wherein the lead connecting layer (8) is arranged on the bottom surface of the analog projection objective mechanism (1), the silicon sensing film layer (9) is arranged on the bottom surface of the lead connecting layer (8), a forward stress sensitive region (6) used for measuring forward stress and a tangential stress sensitive region (7) used for measuring tangential stress are arranged in the bottom surface of the analog projection objective mechanism (1) through which the immersion flow field (2) passes and the corresponding lead connecting layer (8) and the silicon sensing film layer (9).
2. An immersed flow field multi-modal mechanical measurement device according to claim 1, wherein: the positive stress sensitive region (6) comprises a central cavity (61) arranged in a lead connecting layer (8) and the analog projection objective mechanism (1) and a plurality of side cavities (65) for accommodating gold wires (64), the lead connecting layer (8) in the middle of the positive stress sensitive region (6) is provided with a through groove as the central cavity (61), the side cavities (65) are arranged around the central cavity (61), the side cavities (65) are formed by communicating another through groove arranged on the lead connecting layer (8) with a groove arranged on the bottom of the analog projection objective mechanism (1), the lead connecting layer (8) is partially exposed out of an upper surface step in the side cavities (65), and lead electrodes are arranged on the step; and a forward resistance electrode structure is arranged on the upper surface of the silicon sensing thin film layer (9) between each side cavity (65) and the central cavity (61), and the forward resistance electrode structure on the silicon sensing thin film layer (9) is connected with the lead connecting layer (8) through gold wires (64).
3. An immersed flow field multi-modal mechanical measurement device according to claim 2, wherein: two side cavities (65) are arranged, the two side cavities (65) are respectively located on two symmetrical sides of the central cavity (61), and the piezoresistors (62) of the two forward resistor electrode structures of the two side cavities (65) are arranged in the central area of the central cavity (61) at intervals on the same straight line.
4. An immersed flow field multi-modal mechanical measurement device according to claim 2, wherein: forward resistance electrode structure include piezo-resistor (62) and electrode (63), piezo-resistor (62) set up silicon sensing thin film layer (9) upper surface center department in central cavity (61), electrode (63) are arranged on silicon sensing thin film layer (9) upper surface and are extended to central cavity (61) from other cavity (65), piezo-resistor (62) and electrode (63) one end are connected, the lead wire electrode of electrode (63) other end through gold thread (64) and lead wire tie layer (8) upper surface is connected.
5. An immersed flow field multi-modal mechanical measurement device according to claim 1, wherein: the tangential stress sensitive region (7) comprises a central cavity (76) arranged in the lead connecting layer (8) and the simulated projection objective mechanism (1) and a plurality of side cavities (75) for accommodating gold wires (74), a through groove is formed in the lead connecting layer (8) in the middle of the tangential stress sensitive region (7) to serve as the central cavity (76), the side cavities (75) are arranged around the central cavity (76), the side cavities (75) are formed by communicating another through groove formed in the lead connecting layer (8) with a groove formed in the bottom of the simulated projection objective mechanism (1), the lead connecting layer (8) is partially exposed out of an upper surface step in the side cavities (75), and lead electrodes are arranged on the step; a tangential resistance electrode structure is arranged between each side cavity (75) and the central cavity (76), a floating element (71) is processed and arranged on the silicon sensing film layer (9) in the central cavity (76), the floating element (71) is connected with the tangential resistance electrode structure, and the tangential resistance electrode structure is connected with the lead connecting layer (8) through gold wires (74).
6. An immersed flow field multi-modal mechanical measurement device according to claim 5, wherein: a through groove is formed in the silicon sensing thin film layer (9) in the central cavity (76), a floating element (71) is arranged in the through groove, and the floating element (71) is connected with the wall of the through groove through surrounding cantilevers.
7. An immersed flow field multi-modal mechanical measurement device according to claim 5, wherein: four side cavities (75) are arranged, the four side cavities (75) are respectively positioned at four symmetrical corners of the central cavity (76), the floating element (71) is respectively connected with the four corners of the groove wall of the through groove through cantilevers at the four corners around, and four piezoresistors (72) of the tangential resistance electrode structures of the four side cavities (75) are respectively arranged on the cantilevers at the four corners.
8. An immersed flow field multi-modal mechanical measurement device according to claim 5, wherein: the tangential resistance electrode structure comprises a piezoresistor (72) and an electrode (73), wherein the piezoresistor (72) is fixedly arranged at a cantilever of a floating element (71) in a central cavity (76), the electrode (73) is arranged on the upper surface of a silicon sensing thin film layer (9) and extends to the central cavity (76) from a side cavity (75), one end of the piezoresistor (72) is connected with one end of the electrode (73), and the other end of the electrode (73) is connected with a lead electrode on the upper surface of a lead connecting layer (8) through a gold wire (74).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210556075.2A CN115200832A (en) | 2022-05-19 | 2022-05-19 | Multi-mode mechanical measurement device for immersion flow field |
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| CN202210556075.2A CN115200832A (en) | 2022-05-19 | 2022-05-19 | Multi-mode mechanical measurement device for immersion flow field |
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| CN202210556075.2A Pending CN115200832A (en) | 2022-05-19 | 2022-05-19 | Multi-mode mechanical measurement device for immersion flow field |
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