CN115190399A - Plane diaphragm assembly, preparation method thereof and plane diaphragm loudspeaker - Google Patents

Plane diaphragm assembly, preparation method thereof and plane diaphragm loudspeaker Download PDF

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Publication number
CN115190399A
CN115190399A CN202210801644.5A CN202210801644A CN115190399A CN 115190399 A CN115190399 A CN 115190399A CN 202210801644 A CN202210801644 A CN 202210801644A CN 115190399 A CN115190399 A CN 115190399A
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CN
China
Prior art keywords
graphene oxide
metal layer
circuit
diaphragm assembly
planar
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Pending
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CN202210801644.5A
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Chinese (zh)
Inventor
刘开辉
张志强
尚俊峰
陈镔
刘科海
杨方友
林智君
张超
王恩哥
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Yang Sheng Tang Co Ltd
Songshan Lake Materials Laboratory
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Yang Sheng Tang Co Ltd
Songshan Lake Materials Laboratory
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Priority to CN202210801644.5A priority Critical patent/CN115190399A/en
Publication of CN115190399A publication Critical patent/CN115190399A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R7/00—Diaphragms for electromechanical transducers; Cones
    • H04R7/02—Diaphragms for electromechanical transducers; Cones characterised by the construction
    • H04R7/04—Plane diaphragms
    • H04R7/06—Plane diaphragms comprising a plurality of sections or layers
    • H04R7/10—Plane diaphragms comprising a plurality of sections or layers comprising superposed layers in contact
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/003—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor for diaphragms or their outer suspension
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
    • H04R9/02—Details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
    • H04R9/02—Details
    • H04R9/04—Construction, mounting, or centering of coil
    • H04R9/046—Construction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R9/00—Transducers of moving-coil, moving-strip, or moving-wire type
    • H04R9/06—Loudspeakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2231/00—Details of apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor covered by H04R31/00, not provided for in its subgroups
    • H04R2231/001—Moulding aspects of diaphragm or surround

Abstract

The invention provides a preparation method of a plane diaphragm component, which comprises the following steps: forming a metal layer on one surface of the plane diaphragm body, wherein the thickness of the plane diaphragm body is 0.5-6 μm, and the thickness of the metal layer is 1-20 nm; forming a graphene oxide circuit on the metal layer in an electrostatic spraying manner; etching the metal layer to form a metal circuit on the metal layer; and reducing the graphene oxide circuit into a reduced graphene oxide circuit to obtain a voice coil circuit, wherein the thickness of the reduced graphene oxide circuit is less than 50nm. The invention solves the contradiction that the ultrathin thickness and the conductivity performance in the existing voice coil circuit processing technology can not be simultaneously improved. The invention also provides a plane vibrating diaphragm component and a plane vibrating diaphragm loudspeaker.

Description

Plane diaphragm assembly, preparation method thereof and plane diaphragm loudspeaker
Technical Field
The invention relates to the technical field of loudspeakers, in particular to a plane diaphragm component, a preparation method thereof and a plane diaphragm loudspeaker.
Background
The sound production principle of the plane diaphragm loudspeaker is that the sound is produced by utilizing electromagnetic force transduction, namely, a variable electromagnetic field is produced by controlling the current of a voice coil circuit in a fixed magnetic field to drive the plane diaphragm body to vibrate and produce sound. One side or both sides of plane vibrating diaphragm body are provided with magnet/magnetism group, and when the voice coil loudspeaker voice coil circuit switched on the alternating audio current, the voice coil loudspeaker voice coil circuit that is in the quadrature magnetic field received the electromagnetic force effect of vertical direction and drives the plane vibrating diaphragm body and do the vibration sound production, produces sufficient thrust to the plane vibrating diaphragm body to promote the air and produce the sound.
Based on the sound production principle and structure of the planar diaphragm loudspeaker, the planar diaphragm loudspeaker generally needs to satisfy the following conditions: firstly, the voice coil circuit and the planar diaphragm body are required to have thinner thickness, lighter mass and higher rigidity, so that the planar diaphragm body under instantaneous vibration is not easy to deform and distort, and has very high full-frequency-band resolution or sensitivity, quick response, and particularly very good transient and high-frequency characteristics; second, the heat that requires voice coil loudspeaker voice coil circuit to produce distributes away easily, avoids the voice coil loudspeaker voice coil circuit to lead to the plane vibrating diaphragm body to become soft and the vibration unstable owing to generate heat.
When a planar diaphragm assembly in a planar diaphragm speaker is manufactured, in the prior art, a voice coil circuit is usually manufactured on a planar diaphragm body by using a screen printing, spraying or 3D printing process, or a conductive film (such as an aluminum foil, a copper foil, etc.) is adhered on the surface of the planar diaphragm body and then etched to form the voice coil circuit. However, these processes are extremely difficult to process for ultra-thin (i.e. thickness less than 6 μm) flat diaphragm bodies, and the thickness of the prepared voice coil circuit is in the micrometer range, which is difficult to satisfy the requirement of light and thin flat diaphragm components.
In addition, when the planar diaphragm assembly is manufactured, a conductive layer (for example, a metal layer is usually over 500nm thick, or a conductive non-metallic graphene layer is amorphous graphite and has extremely poor conductivity) is formed on an ultra-thin (i.e., the thickness is less than 6 μm) planar diaphragm body by a magnetron sputtering coating process in the prior art, and then a spiral voice coil circuit is manufactured by a laser etching process. Due to the high-temperature heating influence generated by magnetron sputtering coating and laser processing, the process can be applied to a planar diaphragm body with the thickness of more than 6 microns, but the yield of the process for processing the voice coil circuit is extremely low for the planar diaphragm body with the thickness of less than 6 microns. Although the influence of heat on the plane diaphragm body can be relieved by reducing the thickness of the sputtering coating and reducing the laser processing time, the voice coil circuit is too thin, the conductivity is reduced, and the electromagnetic force of the voice coil circuit and the sound production performance of the plane diaphragm body are influenced.
Disclosure of Invention
Therefore, a preparation method of the planar diaphragm assembly is needed to be provided to solve the contradiction that the 'ultra-thin thickness and conductivity performance' in the existing voice coil circuit processing technology cannot be simultaneously improved.
In addition, a planar diaphragm assembly prepared by the preparation method is also needed to be provided.
In addition, it is necessary to provide a flat diaphragm loudspeaker including the above flat diaphragm assembly.
The invention provides a preparation method of a plane vibrating diaphragm component, which comprises the following steps:
forming a metal layer on one surface of a plane vibrating diaphragm body, wherein the thickness of the plane vibrating diaphragm body is 0.5-6 mu m, and the thickness of the metal layer is 1-20 nm;
forming a graphene oxide circuit on the metal layer in an electrostatic spraying manner;
etching the metal layer to form a metal circuit on the metal layer; and
and reducing the graphene oxide circuit into a reduced graphene oxide circuit to obtain a voice coil circuit, wherein the thickness of the reduced graphene oxide circuit is less than 50nm.
In some embodiments, the forming the graphene oxide line on the metal layer by electrostatic spraying specifically includes the following steps:
spraying the graphene oxide dispersion liquid through a nozzle in an electrostatic spraying device; and
and controlling the nozzle to move along the X-axis direction or the Y-axis direction, so that the sprayed graphene oxide dispersion liquid falls on the metal layer to form the graphene oxide circuit.
In some of these embodiments, the method of making further comprises the steps of:
and before the metal layer is formed on one surface of the plane diaphragm body, carrying out plasma roughening treatment on the plane diaphragm body in a roll-to-roll mode.
In some embodiments, the metal layer is prepared by evaporation or sputtering, and the material of the metal layer includes at least one of copper, aluminum-zinc alloy, nickel, silver, and gold.
In some of these embodiments, the method of making further comprises the steps of:
after the metal layer is formed on one surface of the planar diaphragm body and before the graphene oxide circuit is formed on the metal layer, another metal layer is formed on the other surface of the planar diaphragm body in an evaporation or sputtering mode.
In some embodiments, the material of the reduced graphene oxide line includes at least two of silver nanowires, reduced graphene oxide, and an adhesive.
In some of these embodiments, the method of making further comprises the steps of:
after the graphene oxide circuit is formed on the metal layer and before the metal layer is etched, a graphene oxide film is formed on the other surface of the planar diaphragm body.
In another aspect, the invention provides a flat diaphragm assembly prepared by the above preparation method of a flat diaphragm assembly, and the electrical conductivity of the voice coil circuit is greater than or equal to 200S/CM.
In some of these embodiments, the reduced graphene oxide wire has a shape comprising at least one of a meander line, a concentric circle, and a spiral.
In some embodiments, the planar diaphragm body includes an insulating film, and a material of the insulating film includes at least one of polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, and polypropylene.
In another aspect, the present invention provides a planar diaphragm loudspeaker, including a magnetic member, and further including the planar diaphragm assembly, wherein the planar diaphragm assembly and the magnetic member are disposed at an interval.
In some embodiments, the flat diaphragm speaker further includes a supporting member and a housing, the supporting member is provided with a receiving hole, the magnetic member is located in the receiving hole, the magnetic member, the flat diaphragm assembly and the housing are all located on the same side of the supporting member, the flat diaphragm assembly is located between the magnetic member and the housing, and the housing is covered on the flat diaphragm assembly.
According to the invention, the metal layer with the thickness of 1 nm-20 nm is formed on the ultrathin plane vibrating diaphragm body with the thickness of 0.5 μm-6 μm, and the reduced graphene oxide circuit with the thickness of less than 50nm is prepared on the metal layer in an electrostatic spraying manner, so that the voice coil circuit is prepared.
Drawings
Fig. 1 is a cross-sectional view of a planar diaphragm body according to a first embodiment of the present invention;
FIG. 2 is a cross-sectional view of the planar diaphragm body of FIG. 1 after a metal layer is formed on one of the surfaces;
fig. 3 is a cross-sectional view after forming a graphene oxide line on the metal layer shown in fig. 2;
fig. 4 is a schematic diagram illustrating the formation of a graphene oxide line by electrostatic spraying according to the present invention;
FIG. 5 is a cross-sectional view of the metal layer of FIG. 3 after etching;
fig. 6 is a cross-sectional view of a planar diaphragm assembly obtained after the graphene oxide circuit shown in fig. 5 is reduced;
FIG. 7 is a cross-sectional view of a planar diaphragm assembly according to a second embodiment of the present invention;
FIG. 8 is a sectional view of a planar diaphragm assembly according to a third embodiment of the invention;
fig. 9 is a sectional view of a flat diaphragm speaker according to a first embodiment of the present invention;
fig. 10 is a sectional view of a flat diaphragm loudspeaker according to a second embodiment of the present invention;
fig. 11 is a sectional view of a flat diaphragm loudspeaker according to a third embodiment of the present invention.
Icon: 10-a planar diaphragm body; 20. 210-a metal layer; 30-a graphene oxide line; 40-a needle head; 41-a nozzle; 50-metal lines; 60. 61-reducing graphene oxide lines; 70. 71-voice coil line; 100. 200, 300-planar diaphragm assembly; 310-reduction of graphene oxide films; 400. 500, 600-flat diaphragm loudspeaker; 410-a support; 420-a magnetic member; 430-a housing; 440-shim.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
A first embodiment of the present invention provides a method for manufacturing a planar diaphragm assembly, including the steps of:
step S11, please refer to fig. 1, performing plasma roughening processing on the planar diaphragm body 10.
Specifically, the planar diaphragm body 10 may be subjected to plasma roughening treatment in a roll-to-roll manner, so as to improve the bonding force between the subsequent metal layer (see fig. 2) and the planar diaphragm body 10.
In one embodiment, the thickness of the planar diaphragm body 10 is 0.5 μm to 6 μm. In one embodiment, the planar diaphragm body 10 includes an insulating film. In one embodiment, the material of the insulating film includes at least one of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), and polypropylene (PP).
Step S12, referring to fig. 2, a metal layer 20 is formed on one surface of the processed planar diaphragm body 10.
Specifically, the metal layer 20 may be formed on one surface of the planar diaphragm body 10 by evaporation or sputtering. Wherein one surface of the planar diaphragm body 10 is entirely covered by the metal layer 20.
In one embodiment, the thickness of the metal layer 20 is 1nm to 20nm. In one embodiment, the material of the metal layer 20 is at least one of copper, aluminum-zinc alloy, nickel, silver, and gold.
In step S13, please refer to fig. 3 and 4, a graphene oxide circuit 30 is formed on the metal layer 20 by electrostatic spraying.
Specifically, a graphene oxide dispersion liquid is prepared, the graphene oxide dispersion liquid is sprayed out through a nozzle 41 of a needle 40 in an electrostatic spraying device, under the action of a strong external electric field and maxwell stress perpendicular to and tangential to the graphene oxide dispersion liquid, the shape of the sprayed graphene oxide dispersion liquid is changed into an inverted-pointed cone (also called taylor cone), a jet flow led out from the tip of the inverted-pointed cone-shaped graphene oxide dispersion liquid can be automatically split into uniform graphene oxide liquid drops under the action of surface tension, and the graphene oxide liquid drops fall on the metal layer 20 to form the graphene oxide circuit 30 with uniform thickness. Wherein the flow rate of the graphene oxide dispersion liquid discharged from the electrostatic atomizer, the temperature of the metal layer 20, and the distance between the nozzle 41 and the metal layer 20 are adjusted to determine whether the graphene oxide line 30 is formed as a dry layer or the graphene oxide line 30 is formed as a wet layer when the graphene oxide droplets contact the metal layer 20. If the wet graphene oxide line 30 is formed, the dry graphene oxide line 30 can be obtained after drying.
In an embodiment, the graphene oxide line 30 is selectively covered or prepared on the metal layer 20 by controlling the nozzle 41 in the electrostatic spraying apparatus to move along the X-axis direction or the Y-axis direction, so as to obtain the patterned graphene oxide line 30.
In an embodiment, the graphene oxide wire 30 has a shape including at least one of a meander line, a concentric circle, an approximately concentric circle, and a spiral line.
In an embodiment, the thickness of the graphene oxide line 30 is less than 50nm.
Step S14, please refer to fig. 5, etching the metal layer 20 to form a metal circuit 50 on the metal layer 20.
Specifically, the metal layer 20 is etched using an etching solution, so that the metal layer 20 forms the metal line 50. In one embodiment, the etching solution may be HCl or H 2 O 2 、H 2 SO 4 、HNO 3 And FeCl 3 And one or more of the chemical etching solutions.
It is understood that, since the thickness of the metal layer 20 is 1nm to 20nm, the thickness of the metal line 50 etched from the metal layer 20 is also 1nm to 20nm.
Step S15, please refer to fig. 6, the graphene oxide circuit 30 is reduced to a reduced graphene oxide circuit 60, so as to obtain a voice coil circuit 70, and thus obtain the planar diaphragm assembly 100.
Specifically, the graphene oxide line 30 is immersed in a reducing solution to reduce the graphene oxide line 30 into the reduced graphene oxide line 60, so as to obtain the voice coil line 70, and thus obtain the flat diaphragm assembly 100. In one embodiment, the reducing solution may be hydroiodic acid (HI).
It is to be understood that, since the shape of the graphene oxide line 30 includes at least one of a meander line, a concentric circle, an approximately concentric circle, and a spiral line, the shape of the reduced graphene oxide line 60 reduced from the graphene oxide line 30 also includes at least one of a meander line, a concentric circle, an approximately concentric circle, and a spiral line.
Similarly, since the thickness of the graphene oxide line 30 is less than 50nm, the thickness of the reduced graphene oxide line 60 reduced by the graphene oxide line 30 is also less than 50nm.
Wherein, since the reduced graphene oxide line 60 has better conductivity than the graphene oxide line 30, reducing the graphene oxide line 30 can improve the conductivity of the planar diaphragm assembly 100.
In one embodiment, the voice coil wire 70 has a conductivity greater than or equal to 200S/CM.
Referring to fig. 7, a second embodiment of the present invention provides a method for preparing a planar diaphragm assembly, where the difference between the method for preparing a planar diaphragm provided in the second embodiment and the method for preparing a planar diaphragm provided in the first embodiment is:
after step S12 and before step S13, another metal layer 210 is formed on the other surface of the planar diaphragm body 10, and the metal layer 210 is not etched, so as to obtain the planar diaphragm assembly 200. That is, in the step S14, only the metal layer 20 located on the same side of the planar diaphragm body 10 as the graphene oxide circuit 30 is etched, and the metal layer 210 located on the other side of the planar diaphragm body 10 protects the metal layer 210 from being etched by attaching a peelable film on the metal layer 210.
Referring to fig. 8, a method for manufacturing a flat diaphragm assembly according to a third embodiment of the present invention is different from the method for manufacturing a flat diaphragm according to the first embodiment in that:
in step S13, the configured graphene oxide dispersion liquid further includes a silver nanowire and an adhesive in addition to the graphene oxide, wherein the diameter of the silver nanowire ranges from tens of nanometers to tens of micrometers; correspondingly, in step S15, reduced graphene oxide circuit 61 is obtained after reduction, so as to obtain voice coil circuit 71; after step S13 and before step S14, a graphene oxide film (not shown) is formed on the other surface of the planar diaphragm body 10 by using a spin coating method, and the graphene oxide film is also reduced to a reduced graphene oxide film 310 in step S15, so as to finally obtain the planar diaphragm assembly 300.
Referring to fig. 6, a planar diaphragm assembly 100 prepared by the preparation method in the first embodiment is further provided in the first embodiment of the present invention, where the planar diaphragm assembly 100 includes a planar diaphragm body 10 and a voice coil circuit 70 located on one surface of the planar diaphragm body 10.
In one embodiment, the thickness of the planar diaphragm body 10 is 0.5 μm to 6 μm. In one embodiment, the planar diaphragm body 10 includes an insulating film. In one embodiment, the material of the insulating film includes at least one of polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), and polypropylene (PP).
In one embodiment, the voice coil circuit 70 includes a metal circuit 50 and a reduced graphene oxide circuit 60 sequentially stacked on the planar diaphragm body 10.
In one embodiment, the thickness of the metal line 50 is 1nm to 20nm. In one embodiment, the metal line 50 is made of at least one of copper, aluminum-zinc alloy, nickel, silver, and gold.
In an embodiment, the shape of the reduced graphene oxide wire 60 includes at least one of a meander line, a concentric circle, an approximately concentric circle, and a spiral line. In one embodiment, the thickness of the reduced graphene oxide lines 60 is less than 50nm.
In one embodiment, the voice coil wire 70 has a conductivity greater than or equal to 200S/CM.
Referring to fig. 7, a planar diaphragm assembly 200 prepared by the preparation method in the second embodiment is further provided in the second embodiment of the present invention, and the planar diaphragm assembly 200 provided in the second embodiment is different from the planar diaphragm assembly 100 provided in the first embodiment in that:
the planar diaphragm assembly 200 further includes a metal layer 210, and the metal layer 210 is located on the other surface of the planar diaphragm body 10. Namely, the metal layer 210 and the voice coil circuit 70 are respectively located on two opposite surfaces of the planar diaphragm body 10.
Referring to fig. 8, a planar diaphragm assembly 300 prepared by the preparation method in the third embodiment is further provided in the third embodiment of the present invention, and the difference between the planar diaphragm assembly 300 provided in the third embodiment and the planar diaphragm assembly 100 provided in the first embodiment is:
the planar diaphragm assembly 300 comprises a voice coil circuit 71, and the voice coil circuit 71 not only comprises the metal circuit 50, but also comprises a reduced graphene oxide circuit 61. The reduced graphene oxide circuit 61 is made of a material including reduced graphene oxide, a silver nanowire and an adhesive, and the diameter of the silver nanowire ranges from tens of nanometers to tens of micrometers. In addition, the planar diaphragm assembly 300 further includes a reduced graphene oxide film 310, and the reduced graphene oxide film 310 is located on the other surface of the planar diaphragm body 10. Namely, the reduced graphene oxide film 310 and the voice coil circuit 71 are respectively located on two opposite surfaces of the planar diaphragm body 10.
Referring to fig. 9, the first embodiment of the present invention further provides a planar diaphragm loudspeaker 400, where the planar diaphragm loudspeaker 400 includes the planar diaphragm assembly 100, a supporting member 410, a magnetic member 420, a housing 430, and a gasket 440.
In one embodiment, the supporting member 410 is provided with a receiving hole (not shown). Wherein, the supporting member 410 is used for accommodating the magnetic member 420.
In one embodiment, the magnetic member 420 is received in the receiving hole, so that the magnetic member 420 is fixed on the supporting member 410. In one embodiment, the magnetic member 420 may be a magnet or a magnetic set. The magnetic member 420 may generate a magnetic field to subject the planar diaphragm assembly 100 to a magnetic force.
The planar diaphragm assembly 100 and the magnetic member 420 are located on the same side of the supporting member 410. When the voice coil circuit 70 in the planar diaphragm assembly 100 is connected with an alternating audio current, the voice coil circuit 70 in the orthogonal magnetic field is acted by an electromagnetic force in a vertical direction to drive the planar diaphragm body 10 to vibrate and sound, so as to generate sufficient thrust for the planar diaphragm body 10, thereby pushing air to generate sound.
The housing 430 and the flat diaphragm assembly 100 are located on the same side of the support member 410, and the flat diaphragm assembly 100 is located between the housing 430 and the support member 410. The housing 430 covers the planar diaphragm assembly 100 to protect the planar diaphragm assembly 100, so as to prevent the planar diaphragm assembly 100 from being damaged by the outside and prevent the planar diaphragm assembly 100 from being polluted by the outside dust.
In this embodiment, the number of the spacers 440 is four. Two of the spacers 440 are located between the planar diaphragm assembly 100 and the housing 430, for isolating the planar diaphragm assembly 100 from the housing 430; two other spacers 440 are disposed between the planar diaphragm assembly 100 and the magnetic member 420 for isolating the planar diaphragm assembly 100 from the magnetic member 420.
In one embodiment, the flat diaphragm speaker 400 may be used in earphones, car stereo, and the like.
Referring to fig. 10, a flat diaphragm loudspeaker 500 is further provided in the second embodiment of the present invention, and the difference between the flat diaphragm loudspeaker 500 provided in the second embodiment and the flat diaphragm loudspeaker 400 provided in the first embodiment is:
the flat diaphragm loudspeaker 500 does not include the flat diaphragm assembly 100, but includes the flat diaphragm assembly 200. Namely, the planar diaphragm assembly 100 is replaced by the planar diaphragm assembly 200.
Referring to fig. 11, a flat diaphragm loudspeaker 600 is further provided in the third embodiment of the present invention, and the difference between the flat diaphragm loudspeaker 600 provided in the third embodiment and the flat diaphragm loudspeaker 400 provided in the first embodiment is:
the flat diaphragm loudspeaker 600 does not include the flat diaphragm assembly 100, but includes the flat diaphragm assembly 300. Namely, the planar diaphragm assembly 100 is replaced with the planar diaphragm assembly 300.
The invention has the following beneficial effects:
firstly, the metal layer 20 with the thickness of 1 nm-20 nm is formed on the ultrathin planar diaphragm body 10 with the thickness of 0.5 μm-6 μm, and the reduced graphene oxide circuit 60 with the thickness of less than 50nm is prepared on the metal layer 20 in an electrostatic spraying manner, so that the voice coil circuit 70 is prepared, and because the metal circuit 50 and the reduced graphene oxide circuit 60 prepared from the metal layer 20 both have ultrathin thicknesses and the metal circuit 50 and the reduced graphene oxide circuit 60 both have higher conductivities, the contradiction that the ultrathin thickness and the conductivity performance cannot be simultaneously improved in the existing voice coil circuit processing technology is solved.
Secondly, the planar diaphragm body 10 in the invention has a relatively thin thickness (i.e. a thickness of 0.5 μm to 6 μm), a relatively light weight and a relatively high rigidity, and the preparation method of the invention has a relatively low thermal influence on the planar diaphragm body 10, so that the planar diaphragm body 10 has a relatively high yield. Meanwhile, the planar diaphragm body 10 is not easily deformed and distorted during sound production, and exhibits very high full-band resolution or sensitivity, fast response, and particularly good transient, low-frequency and high-frequency characteristics.
Finally, the reduced graphene oxide circuit 60 in the voice coil circuit 70 of the present invention has a better thermal conductivity, so that in the process of sounding when the voice coil circuit 70 is connected to a power-on current, heat generated by the voice coil circuit 70 is easily dissipated, thereby reducing the problems that the voice coil circuit 70 is heated to affect the softening and unstable vibration of the planar diaphragm body 10.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (12)

1. A method for preparing a planar diaphragm component is characterized by comprising the following steps:
forming a metal layer on one surface of the plane diaphragm body, wherein the thickness of the plane diaphragm body is 0.5-6 μm, and the thickness of the metal layer is 1-20 nm;
forming a graphene oxide circuit on the metal layer in an electrostatic spraying manner;
etching the metal layer to form a metal circuit on the metal layer; and
and reducing the graphene oxide circuit into a reduced graphene oxide circuit to obtain a voice coil circuit, wherein the thickness of the reduced graphene oxide circuit is less than 50nm.
2. The method for preparing a flat diaphragm assembly of claim 1, wherein the step of forming the graphene oxide circuit on the metal layer by electrostatic spraying specifically comprises the steps of:
spraying the graphene oxide dispersion liquid through a nozzle in an electrostatic spraying device; and
and controlling the nozzle to move along the X-axis direction or the Y-axis direction, so that the sprayed graphene oxide dispersion liquid falls on the metal layer to form the graphene oxide circuit.
3. The method of preparing a flat diaphragm assembly of claim 1, further comprising the steps of:
and before the metal layer is formed on one surface of the plane diaphragm body, carrying out plasma roughening treatment on the plane diaphragm body in a roll-to-roll mode.
4. The method of claim 1, wherein the metal layer is formed by evaporation or sputtering, and the metal layer comprises at least one of copper, aluminum-zinc alloy, nickel, silver, and gold.
5. The method of preparing a flat diaphragm assembly of any one of claims 1 to 4, further comprising the steps of:
after the metal layer is formed on one surface of the planar diaphragm body and before the graphene oxide circuit is formed on the metal layer, another metal layer is formed on the other surface of the planar diaphragm body in an evaporation or sputtering mode.
6. The method of any one of claims 1 to 4, wherein the reduced graphene oxide lines are made of at least two of silver nanowires, reduced graphene oxide, and an adhesive.
7. The method of preparing a flat diaphragm assembly of claim 6, further comprising the steps of:
after the graphene oxide circuit is formed on the metal layer and before the metal layer is etched, a graphene oxide film is formed on the other surface of the planar diaphragm body.
8. A flat diaphragm assembly prepared by the method for preparing a flat diaphragm assembly according to any one of claims 1 to 7, wherein the electrical conductivity of the voice coil wire is greater than or equal to 200S/CM.
9. The flat diaphragm assembly of claim 8, wherein the reduced graphene oxide wire has a shape including at least one of a meander line, a concentric circle, and a spiral line.
10. The planar diaphragm assembly of claim 8, wherein the planar diaphragm body comprises an insulating film, and the material of the insulating film comprises at least one of polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, and polypropylene.
11. A flat diaphragm loudspeaker including a magnetic member, wherein the flat diaphragm loudspeaker further includes a flat diaphragm assembly as claimed in any one of claims 8 to 10, the flat diaphragm assembly being spaced apart from the magnetic member.
12. The flat diaphragm speaker of claim 11, further comprising a supporting member and a housing, wherein the supporting member has a receiving hole, the magnetic member is located in the receiving hole, the magnetic member, the flat diaphragm assembly and the housing are all located on the same side of the supporting member, the flat diaphragm assembly is located between the magnetic member and the housing, and the housing is covered on the flat diaphragm assembly.
CN202210801644.5A 2022-07-08 2022-07-08 Plane diaphragm assembly, preparation method thereof and plane diaphragm loudspeaker Pending CN115190399A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117381147A (en) * 2023-12-13 2024-01-12 天津海星辉科技有限公司 Precise laser processing device and laser processing method for acoustic thin film

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117381147A (en) * 2023-12-13 2024-01-12 天津海星辉科技有限公司 Precise laser processing device and laser processing method for acoustic thin film
CN117381147B (en) * 2023-12-13 2024-03-19 昆山海菲曼科技集团股份有限公司 Precise laser processing device and laser processing method for acoustic thin film

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