CN115173870B - W-band microwave receiving-transmitting link - Google Patents
W-band microwave receiving-transmitting link Download PDFInfo
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- CN115173870B CN115173870B CN202210744184.7A CN202210744184A CN115173870B CN 115173870 B CN115173870 B CN 115173870B CN 202210744184 A CN202210744184 A CN 202210744184A CN 115173870 B CN115173870 B CN 115173870B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a W-band microwave transceiving link, which comprises an X-band transmitting intermediate frequency module, a W-band up-converter, a W-band transmitting power amplification module, a W-band down-converter, an X-band isolator, an X-band receiving intermediate frequency amplifier, a PDRO module, an E-band octave multiplier, an E-band waveguide power divider, an E-band driving amplifier, various levels of filtering modules and a power supply control module, wherein an X-band signal is converted into a W-band through the X-band transmitting intermediate frequency module, the W-band up-converter, the W-band transmitting power amplification module and the filter, filtered and amplified and then output; the output radio frequency signals are output after being filtered and amplified by a W-band down converter, an X-band receiving intermediate frequency amplifier and a filter, and the W-band signals are converted into an X-band; the invention can perform lossless and distortion-free mutual conversion on the X-band signal and the W-band signal on the premise of ensuring that the signal strength is not lost, and has high stability and is worth being popularized and used.
Description
Technical Field
The invention relates to the technical field of microwaves, in particular to a W-band microwave transceiving link.
Background
The W wave band is an electromagnetic frequency band with the frequency range covering 75-110GHz, and the frequency band contains abundant frequency spectrum resources and is widely applied to the fields of radar imaging, electronic countermeasure, communication, environment monitoring, weather forecast and the like. One of the most critical technologies for developing and utilizing the spectrum resources of the W-band is a solid-state signal source. At present, the implementation of a W solid-state signal source mainly comprises two modes, one is a solid-state oscillation source, and the other is a solid-state frequency doubling source. Compared with an oscillation source, the frequency doubling source has the advantages of reliability, tuning bandwidth, phase noise and the like, and is widely used in practical application. Along with the continuous improvement of the application requirements on the small-size and light-weight requirements, the small-size integrated solid-state frequency doubling source with high output power is put forward and realized to become a necessary trend, the small-size integration is realized while the high output power is realized, and the method can be widely applied to various millimeter wave application systems.
The W-band component in the prior art has the problems of low single-chip output power, poor stability, low integration level, large volume, low efficiency, difficulty in meeting application requirements of military environments and the like.
In view of the above drawbacks, the present inventors have finally achieved the present invention through long-time studies and practices.
Disclosure of Invention
The invention aims to up-convert a lower-frequency microwave signal to a W wave band, output the lower-frequency microwave signal after filtering and amplifying, down-convert a received W wave band signal to a lower-frequency microwave band, output the lower-frequency microwave signal after filtering and amplifying, and realize lossless and distortion-free mutual conversion of an X wave band signal and a W wave band signal on the premise of ensuring that the signal strength is not lost, and has high stability.
In order to achieve the above purpose, the invention discloses a W-band microwave transceiver link, which comprises an X-band transmitting intermediate frequency module, a W-band up-converter, a W-band transmitting power amplifier module, a W-band down-converter, an X-band isolator, an X-band receiving intermediate frequency amplifier, a PDRO module, an E-band octave frequency multiplier, an E-band waveguide power divider and an E-band driving amplifier; the X-band transmitting intermediate frequency module, the W-band up-converter, the W-band filter and the W-band transmitting power amplifier module are sequentially connected to form a transmitting link; the W-band filter, the W-band down converter, the X-band isolator and the X-band receiving intermediate frequency amplifier are sequentially connected to form a receiving link; the PDRO module, the E-band octave frequency multiplier, the E-band waveguide power divider, the E-band filter and the E-band drive amplifier are sequentially connected to form a fixed local oscillation link.
Preferably, the X-band transmitting intermediate frequency module comprises a transmitting intermediate frequency first attenuator chip, an X-band microstrip filter and a transmitting intermediate frequency second attenuator chip; the input end of the X-band microstrip filter is connected with the output end of the transmitting intermediate frequency first attenuator chip, and the output end of the X-band microstrip filter is connected with the input end of the transmitting intermediate frequency second attenuator chip.
Preferably, the W-band up-converter includes an up-conversion mixer chip and an up-conversion attenuator chip, a radio frequency port of the up-conversion mixer chip is connected to an input end of the up-conversion attenuator chip, an intermediate frequency port of the up-conversion mixer chip is connected to an output end of the transmitting intermediate frequency second attenuator chip, and an output end of the up-conversion attenuator chip is connected to an input end of the W-band filter.
Preferably, the E-band driving amplifier comprises an E-band first attenuator chip, an E-band power amplifier chip and an E-band second attenuator chip; the radio frequency input end of the E-band power amplifier chip is connected with the output end of the E-band first attenuator chip, the radio frequency output end of the E-band power amplifier chip is connected with the input end of the E-band second attenuator chip, the output end of the E-band second attenuator chip is connected with the local oscillator port of the up-conversion mixer chip, and the drain bias end of the E-band power amplifier chip is connected with the power supply control module.
Preferably, the output ends of the E-band waveguide power divider are respectively connected with the input ends of the E-band filter, and the output ends of the E-band filter are connected with the input ends of the E-band first attenuator chip.
Preferably, the E-band octave frequency multiplier Bao Beipin comprises a first attenuator chip, a frequency multiplier chip and a frequency multiplication second attenuator chip; the radio frequency input end of the frequency multiplier chip is connected with the output end of the frequency multiplier first attenuator chip, the radio frequency output end of the frequency multiplier chip is connected with the input end of the frequency multiplier second attenuator chip, the voltage feed end of the frequency multiplier chip is connected with the power supply control module, and the output end of the frequency multiplier second attenuator chip is connected with the input end of the E-band waveguide power divider.
Preferably, an input end of the PDRO module is connected with the power control module, and an output end of the PDRO module is connected with an input end of the frequency doubling first attenuator chip.
Preferably, the W-band transmitting power amplifier module comprises a W-band first power amplifier chip and a W-band second power amplifier chip; the radio frequency output end of the W-band first power amplifier chip is connected with the radio frequency input end of the W-band second power amplifier chip, the drain bias ends of the W-band first power amplifier chip and the W-band second power amplifier chip are connected with the power supply control module, and the radio frequency input end of the W-band first power amplifier chip is connected with the output end of the W-band filter.
Preferably, the W-band down-converter includes a down-conversion first attenuator chip, a down-conversion second attenuator chip, and a down-conversion mixer chip; the output end of the down-conversion first attenuator chip is connected with the input end of the down-conversion second attenuator chip, the output end of the down-conversion second attenuator chip is connected with the radio frequency port of the down-conversion mixer chip, the intermediate frequency port of the down-conversion mixer chip is connected with the input end of the X-band isolator, the radio frequency input end of the W-band down-converter is connected with the output end of the W-band filter, and the input end of the W-band filter is connected with the W-band transmitting power amplifier module.
Preferably, the X-band receiving intermediate frequency amplifier comprises a low noise amplifier chip, a receiving intermediate frequency first attenuator chip, a receiving intermediate frequency microstrip filter, a receiving intermediate frequency second attenuator chip and a driving amplifier chip; the receiving intermediate frequency microstrip filter is located between the receiving intermediate frequency first attenuator chip and the receiving intermediate frequency second attenuator chip, the input end of the receiving intermediate frequency first attenuator chip is connected with the output end of the low noise amplifier chip, the output end of the receiving intermediate frequency second attenuator chip is connected with the input end of the driving amplifier chip, the X-band isolator is located between the W-band down-converter and the X-band receiving intermediate frequency amplifier, the output end of the X-band isolator is connected with the input end of the low noise amplifier chip, and the drain bias ends of the low noise amplifier chip and the driving amplifier chip are connected with the power supply control module.
Compared with the prior art, the invention has the beneficial effects that:
in order to prevent the W-band down-converter from saturation, the receiving link in the 1.W-band microwave receiving-transmitting link carries out certain attenuation on the input radio frequency signal, and after the radio frequency signal passes through the mixer, the obtained intermediate frequency signal is amplified again, so that the total frequency conversion gain of the receiving link is more than 0dB.
In order to prevent the up-converter from saturation, the transmitting link in the W-band microwave receiving-transmitting link carries out certain attenuation on the input intermediate frequency signal, and the obtained radio frequency signal is amplified again after the intermediate frequency signal passes through the mixer, so that the total frequency conversion gain of the receiving link is more than 0dB.
3. The transmitting intermediate frequency module and the receiving intermediate frequency amplifier module are integrated with a plurality of stable attenuators, the attenuation temperature coefficient of the stable attenuators can reach-0.009 dB/dB/DEG C, and the floating of the link gain along with the temperature change can be greatly reduced.
4. The welding of the power amplifier chip adopts a high-heat-conductivity silver sintering process to replace the existing eutectic process, so that the welding thermal resistance and the junction temperature of the power amplifier chip are obviously reduced, and the working stability of the power amplifier chip is improved, thereby improving the power amplifier performance, enhancing the high-frequency signal, having high stability and simple process, and being worthy of popularization and use.
Drawings
FIG. 1 is a schematic diagram of a radio frequency circuit in the present invention;
FIG. 2 is a diagram of the feed circuit of all the W-band transmit power amplifier modules, E-band driver amplifiers and E-band octave multipliers of the present invention;
FIG. 3 is a diagram of an X-band receiver intermediate frequency amplifier feed circuit in accordance with the present invention;
fig. 4 to 8 are circuit diagrams of a power control module according to the present invention.
The figures represent the numbers:
1-X wave band receiving intermediate frequency amplifier, 2-X wave band isolator, 3-W wave band down converter, 4-W wave band filter, 5-E wave band driving amplifier, 6-E wave band filter, 7-E wave band waveguide power divider, 8-E wave band octave frequency multiplier, 9-PDRO module, 10-W wave band transmitting power amplifying module, 11-W wave band up converter, 12-transmitting intermediate frequency module and 13-power supply control module
Detailed Description
The above and further technical features and advantages of the present invention are described in more detail below with reference to the accompanying drawings.
In this embodiment, as shown in fig. 1, 2, 3, and 4, fig. 1 is a schematic circuit diagram of the W-band microwave transceiver link; FIG. 2 is a diagram of a feed circuit of all W-band transmitting power amplifier modules, E-band driving amplifiers and E-band octave multipliers in the W-band microwave transceiver link; FIG. 3 is a diagram of a feed circuit of an X-band receiving intermediate frequency amplifier in the W-band microwave transceiver link; fig. 4 to 8 are circuit diagrams of a power supply control module of the W-band microwave transceiver link.
As shown in fig. 1, this embodiment provides a technical solution: a W-band microwave receiving-transmitting link comprises an X-band receiving intermediate frequency amplifier 1, an X-band isolator 2, a W-band down converter 3, a W-band filter 4, an E-band driving amplifier 5, an E-band filter 6, an E-band waveguide power divider 7, an E-band octave 8, a PDRO module 9, a W-band transmitting power amplifier module 10, a W-band up converter 11, a transmitting intermediate frequency module 12 and a power supply control module 13.
After the W-band filter 4 performs out-of-band noise reduction processing on an input W-band signal, the W-band down converter 3 converts the W-band signal into an X-band signal, the X-band receiving intermediate frequency amplifier 1 performs low-noise amplification processing on the X-band signal, and the X-band isolator 2 is used for improving the matching between the X-band receiving intermediate frequency amplifier 1 and the W-band down converter 3; the transmitting intermediate frequency module 12 is used for receiving an X-band input signal, performing certain attenuation to prevent the saturation distortion of the rear-stage W-band up-converter 11, and the W-band up-converter 11 is used for converting the X-band signal from the transmitting intermediate frequency module 12 into a W-band, performing out-of-band noise reduction processing through the W-band filter 4, and finally amplifying and outputting the signal by the two-stage W-band transmitting power amplification module 10; the local oscillation signals of the receiving and transmitting links come from the same PDRO module 9, after being output by the PDRO module 9, the local oscillation signals are subjected to frequency conversion treatment by an E-band octave frequency multiplier 8 and then enter an E-band waveguide power divider 7, the two paths of signals are divided into two paths, after being subjected to out-of-band noise reduction treatment by an E-band filter 6, the two paths of signals finally reach local oscillation ports of an E-band driving amplifier 7, amplified and output to a W-band down converter 3 and a W-band up converter 11; the power supply control module 13 is used for converting AC220V commercial power into DC12V voltage, further reducing DC12V into DC5V, then transmitting the DC12V voltage to each amplifier and each frequency multiplier, and meanwhile, a serial port level conversion chip integrated inside the power supply control module 13 can convert state input into high and low level control signals required by STM32F103C8T6, so that control of on-off of the power supply of the whole assembly is realized.
The X-band receiving intermediate frequency amplifier 1 comprises a low noise amplifier chip U1, a receiving intermediate frequency first attenuator chip S1, a receiving intermediate frequency microstrip filter, a receiving intermediate frequency second attenuator chip S1 and a driving amplifier chip U2; the receiving intermediate frequency microstrip filter is positioned between the receiving intermediate frequency first attenuator chip S1 and the receiving intermediate frequency second attenuator chip S1, the input end of the receiving intermediate frequency first attenuator chip S1 is connected with the output end of the low noise amplifier chip U1, and the output end of the receiving intermediate frequency second attenuator chip S1 is connected with the input end of the driving amplifier chip U2. The specific model of the low-noise amplifier chip U1 is ILA-0618E-PQ3, the specific model of the driving amplifier chip U2 is IPA-0618-22-PQ3, and the specific model of the receiving intermediate frequency first attenuator chip S1 and the specific model of the receiving intermediate frequency second attenuator chip S1 are MTCA1805N9-CN. The low-noise amplifier chip U1 is used for amplifying the weak intermediate frequency signal which is subjected to down-conversion by low noise, the receiving intermediate frequency microstrip filter is used for filtering harmonic interference signals generated by the down-conversion, and the driving amplifier chip U2 is used for further amplifying the intermediate frequency signal to a required power value. The output P-1 of the X-band receiving intermediate frequency amplifier 1 is not less than 20dBm.
The W-band down-converter 3 comprises a down-conversion first attenuator chip S2, a down-conversion second attenuator chip S2 and a down-conversion mixer chip U3; the output end of the down-conversion first attenuator chip S2 is connected with the input end of the down-conversion second attenuator chip S2, the output end of the down-conversion second attenuator chip S2 is connected with the radio frequency port of the down-conversion mixer chip U3, the intermediate frequency port of the down-conversion mixer chip U3 is connected with the input end of the X-band isolator 2, the radio frequency input end of the W-band down-converter 3 is connected with the output end of the W-band filter 4, and the input end of the W-band filter 4 is connected with the W-band transmitting power amplifier module 10. The specific model of the down-conversion mixer chip U3 is TCC2002M, and the specific model of the down-conversion first attenuator chip S2 and the specific model of the down-conversion second attenuator chip S2 are MWA100-4. The down-conversion first attenuator chip S2 and the down-conversion second attenuator chip S2 are used for attenuating the incoming W-band signal and preventing saturation distortion of the down-conversion mixer.
An X-band isolator 2 is connected between the X-band receiving intermediate frequency amplifier 1 and the W-band down converter 3, the input end of the X-band isolator 2 is connected with an intermediate frequency port of the down-conversion mixer U3, and the output end of the X-band isolator 2 is connected with the input end of the driving amplifier chip U2. The X-band isolator 2 can improve standing waves, reduce the influence of reflected signals and improve the working stability of a radio frequency link.
The W-band up-converter 11 comprises an up-conversion mixer chip U3 and an up-conversion attenuator chip S3; the radio frequency port of the up-conversion mixer chip U3 is connected with the input end of the up-conversion attenuator chip S3, the intermediate frequency port of the up-conversion mixer U3 is connected with the output end of the X-band second attenuator chip, and the specific model of the up-conversion attenuator chip S3 is MWA100-2.
The W-band transmitting power amplifier module 10 comprises a W-band first power amplifier chip U4 and a W-band second power amplifier chip U4; the radio frequency output end of the W-band first power amplifier chip U4 is connected with the radio frequency input end of the W-band second power amplifier chip U4, and the drain bias ends of the W-band first power amplifier chip U4 and the W-band second power amplifier chip U4 are connected with the power supply control module. The specific model of the W-band first power amplifier chip U4 and the W-band second power amplifier chip U4 is TCC1904A.
The power amplifier chip welding used by the W-band transmitting power amplifier module 10 adopts a high-heat-conductivity sintering silver welding process, the sintering silver welding heat conductivity can reach more than 200W/(m.K), and the common eutectic welding heat conductivity is only about 50W/(m.K), and the sintering silver welding heat conductivity is 4 times of that of the eutectic welding. Therefore, the W-band power amplifier chip with high heat consumption and low efficiency is welded by adopting the silver sintering process, so that the welding thermal resistance and the junction temperature and the thermal resistance of the power amplifier chip can be obviously reduced, and the working stability of the power amplifier chip can be improved, thereby improving the power amplifier performance. The output P-1 of the W-band transmitting power amplifier module 10 is not less than 15dBm.
A W-band filter 4 is connected between the W-band transmitting power amplifier module 10 and the W-band up-converter 11, the W-band down-converter 3.
The E-band octave 8 comprises a frequency multiplication first attenuator chip S4, a frequency multiplier chip U5 and a frequency multiplication second attenuator chip S3; the radio frequency output end RF OUT of the frequency multiplier chip U5 is connected with the input end of the frequency multiplier second attenuator chip S3, the radio frequency input end of the frequency multiplier chip U5 is connected with the output end of the frequency multiplier first attenuator chip S4, the voltage feed end of the frequency multiplier chip U5 is connected with the power supply control module 13, and the output end of the frequency multiplier second attenuator chip S3 is connected with the input end of the E-band waveguide power divider 7. The specific model of the frequency multiplier chip U5 is TCC1907D, and the specific model of the frequency multiplier first attenuator chip S4 is IFA-05.
The X-band transmitting intermediate frequency module 12 comprises a transmitting intermediate frequency first attenuator chip S1, an X-band microstrip filter and a transmitting intermediate frequency second attenuator chip S1, wherein an input end of the X-band microstrip filter is connected with an output end of the transmitting intermediate frequency first attenuator chip S1, and an output end of the X-band microstrip filter is connected with an input end of the transmitting intermediate frequency second attenuator chip S1. The attenuation temperature coefficients of the transmitting intermediate frequency first attenuator chip S1 and the transmitting intermediate frequency second attenuator chip S1 are-0.009 dB/dB/DEG C, so as to counteract the change of the gain of the transmitting link along with the fluctuation of temperature, and the X-band microstrip filter is used for filtering out-of-band interference signals from the outside.
The E-band octave 8 is connected with the E-band waveguide power divider 7, the E-band waveguide power divider 7 adopts a 3dB waveguide porous array coupling technology, the broadband low-loss high-isolation characteristic is realized, and the isolation port adopts a wedge-shaped SiC absorber embedded technology, so that the targets of small volume, high isolation, good matching and the like are realized.
The PDRO module 9 is connected with the E-band octave frequency multiplier 8, the input end of the PDRO module 9 is connected with the power control module 13, and the output end of the PDRO module 9 is connected with the input end of the frequency multiplication first attenuator chip S4. The PDRO module 9 is configured to customize the local vibration source and output 12dBm@10.625GHz with a fixed frequency point.
An E-band filter 6 is connected between the E-band waveguide power divider 7 and the E-band drive amplifier 5. The output ends of the E-band waveguide power divider 7 are respectively connected with the input ends of the E-band filter 6, and the output ends of the E-band filter 6 are connected with the input ends of the E-band first attenuator chip S3.
The E-band driving amplifier 5 comprises an E-band first attenuator chip S3, an E-band power amplifier chip U6 and an E-band second attenuator chip S3; the radio frequency input end of the E-band power amplifier chip U6 is connected with the output end of the E-band first attenuator chip S3, the radio frequency output end of the E-band power amplifier chip U6 is connected with the input end of the E-band second attenuator chip S3, the output end of the E-band second attenuator chip S3 is connected with the local oscillator port LO of the up-conversion mixer chip U3, and the drain bias end of the E-band power amplifier chip U6 is connected with the power supply control module 13. E-band power amplifier chip U6, a specific model number of which is TCC1905A.
As shown in fig. 2, the feeding parts of the E-band local oscillator driving amplifier 5, the E-band octave frequency multiplier 8 and the W-band transmitting power amplifier module 10 include a positive pressure LDO chip Q1, a negative pressure DCDC chip Q2, a negative pressure LDO chip Q3, a PMOS transistor Q4 and an NPN transistor Q5, the positive pressure LDO chip Q1 is specifically designed as ADP3336, the negative pressure DCDC chip Q2 is specifically designed as LM2611, and the negative pressure LDO chip Q3 is specifically designed as MAX1735.
The capacitor C5, the parallel capacitor C1, the parallel resistor R2 and the parallel resistor R3 are sequentially connected between the 1 st pin to the 3 rd pin of the positive-pressure LDO chip Q1 and the 2 nd pin of the PMOS tube Q4 in parallel; the 3 rd pin of the PMOS tube Q4 is connected with the drain bias end of the E-band driving amplifier 5 or the W-band transmitting power amplifier module 10 or the E-band octave 8; the 1 st pin of the PMOS tube Q4 is connected with the 3 rd pin of the triode Q5; the negative-voltage DCDC chip Q2 is connected between the 1 st pin and the 2 nd and 3 rd pins of the negative-voltage LDO chip Q3 in series with a capacitor C8, a parallel inductor L2, a parallel zener diode D1, a series inductor L3, a parallel capacitor C7, a parallel capacitor C11, a parallel resistor R8 and a parallel capacitor C10 in sequence; a resistor R9, a parallel capacitor C9 and a parallel resistor R5 are sequentially connected between the 5 th pin of the negative-pressure LDO chip Q3 and the 2 nd pin of the triode Q5 in parallel; a capacitor C9, a series resistor R7 and a parallel resistor R10 are sequentially connected between a5 th pin of the negative-pressure LDO chip Q3 and a first grid electrode of the E-band octave frequency multiplier 8 in parallel; a capacitor C9, a series resistor R7, a series resistor R10 and a parallel resistor R11 are sequentially connected between a5 th pin of the negative-pressure LDO chip Q3 and a grid electrode of the E-band driving amplifier 5 or a grid electrode of the W-band transmitting power amplifier module 10 or a second grid electrode of the E-band octave frequency multiplier 8 in parallel; between the 1 st pin of the triode Q5 and the ground, a resistor R5 and a series resistor R4 are sequentially connected in parallel.
As shown in fig. 3, the feeding portion of the X-band receiving intermediate frequency amplifier 1 includes two positive pressure LDO chips Q1, and a capacitor C19 (or C16), a capacitor C17 (or C13) and a resistor R16 (or R14) are sequentially connected in parallel between the 1 st to 3 rd pins of the positive pressure LDO chip Q1 and the amplifier chips U5 and U6. The specific model of the AC-DC power supply is Mingwei MPM-30-12ST type 30W high-density small-volume (69.5X10X10X124 mm) switch power supply, and is mainly used for converting AC220V voltage into DC12V voltage.
As shown in fig. 3 to 8, the power supply control circuit includes a positive pressure LDO chip Q1, a positive pressure LDO chip Q6, a positive pressure DCDC chip Q7, a level conversion chip Q8, and a single chip microcomputer STM32F103C8T6 minimum system, wherein the positive pressure LDO chip Q6 is specifically TLV76701DRV, the positive pressure DCDC chip Q7 is specifically TPS562207, and the level conversion chip Q8 is specifically MAX3077eesa+.
A resistor R36 and a parallel resistor R28 are sequentially connected between the 4 th pin of the positive pressure LDO chip Q6 and the A4 pin of the minimum system of the SCM STM32F103C8T 6; a resistor R34 (or R21) and a parallel resistor R30 (or R22) are sequentially connected between A5 th pin of the positive-pressure DCDC chip Q7 and an A3 (or A5) pin of the SCM STM32F103C8T6 minimum system in series; between the 6 th pin of the positive-pressure DCDC chip Q7 and the 6 th to 8 th pins of the positive-pressure LDO chip Q1, a resistor R25, a parallel capacitor C30, a series resistor R27, a parallel inductor L5, a parallel capacitor C35, a parallel capacitor C37, a parallel capacitor C36 and a parallel capacitor C39 are sequentially connected in parallel; the capacitor C38, the capacitor C34 and the resistor R26 are sequentially connected in parallel between the 1 st pin and the 3 rd pin of the positive-pressure LDO chip Q1 and the 3.3 pin of the minimum system of the singlechip STM32F103C8T 6; the 2 nd pin of the level conversion chip Q8 is interconnected with the A1 pin of the minimum system of the SCM 32F103C8T6, and the 3 rd pin of the level conversion chip Q8 is interconnected with the A2 pin of the minimum system of the SCM 32F103C8T 6; the 5 th pin and the 6 th pin of the level conversion chip Q8 are used as serial port RS422 differential output, the 7 th pin and the 8 th pin of the level conversion chip Q8 are used as serial port RS422 differential input, and a resistor R17 is connected between the 7 th pin and the 8 th pin of the level conversion chip Q8 in parallel.
The foregoing description of the preferred embodiment of the invention is merely illustrative of the invention and is not intended to be limiting. It will be appreciated by persons skilled in the art that many variations, modifications, and even equivalents may be made thereto without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. The W-band microwave receiving and transmitting link is characterized in that: the device comprises an X-band transmitting intermediate frequency module, a W-band up-converter, a W-band transmitting power amplification module, a W-band down-converter, an X-band isolator, an X-band receiving intermediate frequency amplifier, a PDRO module, an E-band octave frequency multiplier, an E-band waveguide power divider and an E-band driving amplifier; the X-band transmitting intermediate frequency module, the W-band up-converter, the W-band filter and the W-band transmitting power amplifier module are sequentially connected to form a transmitting link; the W-band filter, the W-band down converter, the X-band isolator and the X-band receiving intermediate frequency amplifier are sequentially connected to form a receiving link; the PDRO module, the E-band octave frequency multiplier, the E-band waveguide power divider, the E-band filter and the E-band drive amplifier are sequentially connected to form a fixed local oscillation link.
2. The W-band microwave transceiver link of claim 1, wherein: the X-band transmitting intermediate frequency module comprises a transmitting intermediate frequency first attenuator chip, an X-band microstrip filter and a transmitting intermediate frequency second attenuator chip; the input end of the X-band microstrip filter is connected with the output end of the transmitting intermediate frequency first attenuator chip, and the output end of the X-band microstrip filter is connected with the input end of the transmitting intermediate frequency second attenuator chip.
3. The W-band microwave transceiver link of claim 2, wherein: the W-band up-converter comprises an up-conversion mixer chip and an up-conversion attenuator chip, wherein a radio frequency port of the up-conversion mixer chip is connected with an input end of the up-conversion attenuator chip, an intermediate frequency port of the up-conversion mixer chip is connected with an output end of the transmitting intermediate frequency second attenuator chip, and an output end of the up-conversion attenuator chip is connected with an input end of the W-band filter.
4. A W-band microwave transceiver link as claimed in claim 3, wherein: the E-band driving amplifier comprises an E-band first attenuator chip, an E-band power amplifier chip and an E-band second attenuator chip; the radio frequency input end of the E-band power amplifier chip is connected with the output end of the E-band first attenuator chip, the radio frequency output end of the E-band power amplifier chip is connected with the input end of the E-band second attenuator chip, the output end of the E-band second attenuator chip is connected with the local oscillator port of the up-conversion mixer chip, and the drain bias end of the E-band power amplifier chip is connected with the power supply control module.
5. The W-band microwave transceiver link of claim 4, wherein: the output end of the E-band waveguide power divider is respectively connected with the input end of the E-band filter, and the output end of the E-band filter is connected with the input end of the E-band first attenuator chip.
6. The W-band microwave transceiver link of claim 5, wherein: the E-band octave frequency multiplier Bao Beipin comprises a first attenuator chip, a frequency multiplier chip and a frequency multiplication second attenuator chip; the radio frequency input end of the frequency multiplier chip is connected with the output end of the frequency multiplier first attenuator chip, the radio frequency output end of the frequency multiplier chip is connected with the input end of the frequency multiplier second attenuator chip, the voltage feed end of the frequency multiplier chip is connected with the power supply control module, and the output end of the frequency multiplier second attenuator chip is connected with the input end of the E-band waveguide power divider.
7. The W-band microwave transceiver link of claim 6, wherein: the input end of the PDRO module is connected with the power supply control module, and the output end of the PDRO module is connected with the input end of the frequency doubling first attenuator chip.
8. The W-band microwave transceiver link of claim 1, wherein: the W-band transmitting power amplifier module comprises a W-band first power amplifier chip and a W-band second power amplifier chip; the radio frequency output end of the W-band first power amplifier chip is connected with the radio frequency input end of the W-band second power amplifier chip, the drain bias ends of the W-band first power amplifier chip and the W-band second power amplifier chip are connected with the power supply control module, and the radio frequency input end of the W-band first power amplifier chip is connected with the output end of the W-band filter.
9. The W-band microwave transceiver link of claim 1, wherein: the W-band down converter comprises a down-conversion first attenuator chip, a down-conversion second attenuator chip and a down-conversion mixer chip; the output end of the down-conversion first attenuator chip is connected with the input end of the down-conversion second attenuator chip, the output end of the down-conversion second attenuator chip is connected with the radio frequency port of the down-conversion mixer chip, the intermediate frequency port of the down-conversion mixer chip is connected with the input end of the X-band isolator, the radio frequency input end of the W-band down-converter is connected with the output end of the W-band filter, and the input end of the W-band filter is connected with the W-band transmitting power amplifier module.
10. The W-band microwave transceiver link of claim 9, wherein: the X-band receiving intermediate frequency amplifier comprises a low noise amplifier chip, a receiving intermediate frequency first attenuator chip, a receiving intermediate frequency microstrip filter, a receiving intermediate frequency second attenuator chip and a driving amplifier chip; the receiving intermediate frequency microstrip filter is located between the receiving intermediate frequency first attenuator chip and the receiving intermediate frequency second attenuator chip, the input end of the receiving intermediate frequency first attenuator chip is connected with the output end of the low noise amplifier chip, the output end of the receiving intermediate frequency second attenuator chip is connected with the input end of the driving amplifier chip, the X-band isolator is located between the W-band down-converter and the X-band receiving intermediate frequency amplifier, the output end of the X-band isolator is connected with the input end of the low noise amplifier chip, and the drain bias ends of the low noise amplifier chip and the driving amplifier chip are connected with the power supply control module.
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