CN115172624A - Display panel and electronic device - Google Patents

Abstract

The invention provides a display panel and electronic equipment, wherein the display panel comprises a light-emitting structure layer, a polarizing layer arranged on the light-emitting side of the light-emitting structure layer, a first light-emitting enhancement layer arranged on one side of the polarizing layer far away from the light-emitting structure layer, and an encapsulation layer arranged on one side of the first light-emitting enhancement layer far away from the polarizing layer. By adopting the scheme of the invention, the light-emitting efficiency of the OLED device can be improved.

Description

Display panel and electronic device

Technical Field

The invention relates to a display panel and electronic equipment, and belongs to the technical field of organic light-emitting display.

Background

Compared with the conventional LCD (Liquid Crystal Display) Display technology, an OLED (Organic Light-Emitting Diode) has the advantages of active Light emission, lightness, thinness, high response speed, good stability, low driving voltage, abundant material types, high contrast ratio and the like, and is widely applied.

However, since the rapid development of the OLED is hindered by insufficient brightness and low external quantum efficiency (light extraction efficiency), improving the light extraction efficiency of the OLED becomes a key to the development of the OLED.

Disclosure of Invention

The invention provides a display panel and an electronic device, and aims to solve the problem of low light emitting efficiency of an OLED.

An embodiment of the present invention provides a display panel, including:

a light emitting structure layer;

the polarizing layer is arranged on the light emitting side of the light emitting structure layer;

the first light-emitting enhancement layer is arranged on one side, far away from the light-emitting structure layer, of the polarizing layer; and the number of the first and second groups,

and the packaging layer is arranged on one side, away from the polarizing layer, of the first light-emitting enhancement layer.

Optionally, the display panel further comprises a second light extraction enhancement layer;

the second light-emitting enhancement layer is arranged on the backlight side of the light-emitting structure layer and used for reflecting part of light emitted by the light-emitting structure layer to the light-emitting side of the light-emitting structure layer.

The light emitting structure layer includes a first electrode, a second electrode, and a light emitting material layer between the first electrode and the second electrode; wherein the first electrode is positioned at the backlight side of the light emitting structure layer;

the second light-emitting enhancement layer comprises a reflecting layer arranged on one side, close to the luminescent material layer, of the first electrode.

Optionally, the reflective layer is a nano aluminum thin film layer.

Optionally, the thickness of the nano aluminum thin film layer is 100-300 nm.

Optionally, the first light-emitting enhancement layer includes a first antireflection layer and a second antireflection layer, the first antireflection layer is disposed on the light-emitting side of the polarizing layer, and the second antireflection layer is disposed on a side of the first antireflection layer away from the polarizing layer; the refractive index of the first antireflection layer is smaller than that of the second antireflection layer;

optionally, a planarization layer is disposed on a light exit side of the polarization layer, the second anti-reflection layer is disposed on a side of the planarization layer away from the polarization layer, a plurality of grooves are disposed on a side of the second anti-reflection layer adjacent to the planarization layer, the first anti-reflection layer includes a plurality of anti-reflection units, and the anti-reflection units are respectively embedded in the grooves;

and the refractive index of the first antireflection layer is smaller than that of the second antireflection layer.

Preferably, the first anti-reflective layer has a refractive index of 1.4 to 1.5, and the second anti-reflective layer has a refractive index of 1.6 to 1.9.

Optionally, the light emitting structure layer includes a plurality of pixel openings; the orthographic projection of the single antireflection unit or the multiple adjacent antireflection units on the light emitting structure layer is a fully-closed graph or a partially-closed graph, and the fully-closed graph or the partially-closed graph surrounds the pixel opening.

Optionally, the fully closed pattern or partially closed pattern includes continuous or partially interrupted diamond-shaped rings, hexagonal rings, and circular rings.

Optionally, the material of the first anti-reflective layer includes silicon dioxide, and the material of the second anti-reflective layer includes silicon nitride or zirconium oxide.

Optionally, the first antireflection layer and the second antireflection layer each have a thickness of 100 to 500 nm.

The embodiment of the invention also provides a display panel, which comprises the display panel.

The embodiment of the invention also provides electronic equipment which comprises the display panel.

The invention provides a display panel and electronic equipment, which comprise a light emitting structure layer, a polarizing layer arranged on the light emitting side of the light emitting structure layer, a first light emitting enhancement layer arranged on one side of the polarizing layer far away from the light emitting structure layer, and a packaging layer arranged on one side of the first light emitting enhancement layer far away from the polarizing layer. The light that light emitting structure layer sent passes through the polarisation layer and gets into first light-emitting enhancement layer after the reflection takes place and refract, and first light-emitting enhancement layer offsets the partial reverberation of first light-emitting enhancement layer near light emitting structure layer one side and the partial reverberation of first light-emitting enhancement layer one side of keeping away from light emitting structure layer to reduce the interbedded reflection of light, increase the transmissivity of light, improve light-emitting efficiency. Therefore, the light extraction efficiency of the device can be improved through the first light extraction enhancement layer.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention. Moreover, the drawings and the description are not intended to limit the scope of the inventive concept in any way, but rather to illustrate it by those skilled in the art with reference to specific embodiments.

FIG. 1 is a schematic diagram of a part of a prior art OLED device;

fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the invention;

FIG. 3 is a schematic view of another display panel according to an embodiment of the present invention;

FIG. 4 is an enlarged schematic view of a portion of the display panel of FIG. 3;

FIG. 5 is a schematic view of another display panel according to an embodiment of the present invention;

FIG. 6 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

FIG. 8 is a schematic top view illustrating a display panel according to an embodiment of the present invention;

FIG. 9 is a schematic top view illustrating a display panel according to another embodiment of the present invention;

FIG. 10 is a schematic top view illustrating a display panel according to another embodiment of the present invention;

FIG. 11 is a schematic structural diagram of another display panel according to an embodiment of the present invention;

fig. 12 is a schematic structural diagram of another display panel according to an embodiment of the invention.

Description of reference numerals:

1-a light emitting structure layer;

2-sub-pixel structure

10-an anode;

20-a hole transport layer;

30-a light-emitting layer;

40-an electron transport layer;

50-a cathode;

60-an encapsulation layer;

70-a substrate;

80-a second light extraction enhancement layer;

90-a first light extraction enhancement layer;

901-a first antireflective layer;

902 — a second antireflective layer;

100-a planarization layer;

110 polarizing layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention. The embodiments described below and the features of the embodiments can be combined with each other without conflict.

Summary of the application

Referring to fig. 1, fig. 1 is a schematic partial structure diagram of a conventional OLED device. The structure shown in fig. 1 sequentially comprises from bottom to top: the light-emitting diode comprises an anode 10, a hole transport layer 20, a light-emitting layer 30, an electron transport layer 40, a cathode 50 and an encapsulation layer 60, wherein holes generated at the anode 10 and electrons generated at the cathode 50 reach the light-emitting layer 30 through the hole transport layer 20 and the electron transport layer 40 respectively and are recombined to emit light. A part of the light rays are transmitted upwards and exit from the light-emitting side after passing through the multilayer film layers (the electron transport layer 40, the cathode 50 and the encapsulation layer 60); another part of the light travels downward and is reflected by the anode 10 before exiting from the light exit side.

Based on the above structure, the inventor found that, as shown in fig. 1, the light propagation process generates total reflection between the film interfaces on the light-emitting side and generates a waveguide effect in the film (arrows in fig. 1 show the propagation path of a part of light), that is, all light not incident from the vertical direction is partially reflected back to the OLED stack and is transmitted out from the device side after countless reflections to cause light-emitting loss, which results in that about 80% of light in the OLED stack is suppressed inside the device, so that the light-emitting efficiency (external quantum efficiency) is reduced. In addition, when light is reflected at the interface of the anode 10, part of the light is absorbed, so that the reflected light is reduced relative to the incident light, and the light extraction efficiency is further reduced. According to research, the current light extraction efficiency (external quantum efficiency) is generally between 20% and 30%, so that the improvement of the light extraction efficiency (external quantum efficiency) becomes the key for the development of the OLED.

In view of the foregoing problems, embodiments of the present invention provide a display panel and an electronic device, which increase light extraction efficiency by providing one or more light extraction enhancement layers. The following non-limiting illustrations of specific embodiments are by way of exemplary examples.

Exemplary display Panel

Referring to fig. 2 to 5, fig. 2 to 4 are respectively schematic structural diagrams of three display panels according to an embodiment of the invention, and fig. 5 is an enlarged schematic partial structure diagram of the display panel in fig. 3. As shown in fig. 2, the display panel includes:

a light emitting structure layer 1; for emitting light;

a polarizing layer 110 disposed on the light emitting side of the light emitting structure layer 1; the light extraction device is used for changing the traveling route of the light so as to facilitate the light extraction;

a first light-emitting enhancement layer 90 disposed on a side of the polarizing layer 110 away from the light-emitting structure layer 1; the light-emitting structure layer is used for offsetting part of reflected light of the first light-emitting enhancement layer 90 close to one side of the light-emitting structure layer 1 and part of reflected light of the first light-emitting enhancement layer 90 far away from one side of the light-emitting structure layer 1; and the number of the first and second groups,

and the encapsulation layer 60 is disposed on a side of the first light-emitting enhancement layer 90 away from the light-emitting structure layer 1.

The light emitting structure layer 1 refers to a film structure including a first electrode, a second electrode and a film layer therebetween for light emission and auxiliary light emission, wherein the first electrode and the second electrode are one of the anode 10 and the cathode 50, respectively. And the first electrode is positioned at the other side of the light emitting side departing from the light emitting structure layer 1. In addition, the display panel shown in fig. 2 further includes a substrate 70, the light emitting structure layer 1 is disposed on the substrate 70, and the substrate 70 supports various film structures thereon.

Specifically, one reason for the low light extraction efficiency is the reflection of part of the light at the interface between the light extraction-side film layers. Therefore, the first light-emitting enhancement layer 90 is arranged on the light-emitting side, so that part of reflected light of the first light-emitting enhancement layer 90 close to one side of the light-emitting structure layer 1 and part of reflected light of the first light-emitting enhancement layer 90 far away from one side of the light-emitting structure layer 1 can be counteracted, reflected light on the surface of the film layer can be reduced, an anti-reflection effect is achieved, light transmittance is increased, and light-emitting efficiency is finally improved. Since the first light extraction enhancement layer 90 functions to reduce reflected light, the first light extraction enhancement layer 90 may also be referred to as an anti-reflection layer.

In addition, the first light-emitting enhancement layer 90 performs first-layer encapsulation on the top metal of the light-emitting structure layer 1, and the encapsulation layer 60 realizes second-layer encapsulation on the top metal of the light-emitting structure layer 1 at the side of the first light-emitting enhancement layer 90 away from the light-emitting structure layer 1. The two-layer encapsulation can ensure better encapsulation effect, and the materials of the first light-emitting enhancement layer 90 and the encapsulation layer 60 can be different, so that the encapsulation failure can be better avoided, and the service life can be prolonged.

In other embodiments, as shown in fig. 3 and 4, the display panel further comprises a second light extraction enhancement layer 80; the second light-emitting enhancement layer 80 is disposed on the backlight side of the light-emitting structure layer 1, and the second light-emitting enhancement layer 80 is used for reflecting a part of light emitted by the light-emitting structure layer 1 to the light-emitting side of the light-emitting structure layer 1.

Specifically, another reason for the low light extraction efficiency is that light emitted from the light emitting structure layer 1 is partially absorbed by the first electrode at the backlight side of the light emitting structure layer 1 when the light is reflected at the first electrode. Consequently, set up the second light-emitting enhancement layer 80 that plays the reflex action through the opposite side that deviates from the light-emitting side of light emitting structure layer 1, the reflector layer promptly can strengthen this side to the reflective power of light, improves the reflectivity, and then improves the quantity of the light that the light-emitting side wore out indirectly, finally improves luminous efficiency promptly.

It will be appreciated that in other embodiments, in addition to the display panel shown in fig. 2 and 3, the display panel may include the second light exit enhancement layer 80, as shown in fig. 5, but not the first light exit enhancement layer 90.

The foregoing is a schematic illustration of the present invention, and a detailed description of the present invention will be provided below with reference to various embodiments and accompanying drawings.

Referring to fig. 6, fig. 6 is a schematic structural diagram of another display panel according to an embodiment of the present invention. As shown in fig. 6, in the present embodiment, the light emitting structure layer 1 includes an anode 10, a hole transport layer 20, a light emitting layer 30, an electron transport layer 40, and a cathode 50, which are stacked, and the hole transport layer 20, the light emitting layer 30, and the electron transport layer 40 constitute a light emitting material layer. Moreover, the OLED device corresponding to the display panel shown in fig. 4 is a top-emitting structure, that is, the side where the cathode 50 is located is a light-emitting side, the cathode 50 is a transparent structure, and the anode 10 is an opaque structure and can reflect light.

In addition, it is understood that, in addition to the film layer structure shown in fig. 6, the light emitting structure layer 1 may further include a hole injection layer between the hole transport layer 20 and the anode 10, or may further include an electron injection layer between the electron transport layer 40 and the cathode 50, or may also not include the hole transport layer 20, and the like, and is not particularly limited.

With reference to fig. 6, in the present embodiment, a second light-emitting enhancement layer 80 is further disposed on a side of the first electrode, i.e., the anode 10, close to the light-emitting material layer (between the anode 10 and the light-emitting material layer), and the second light-emitting enhancement layer 80 can also be referred to as a reflective layer.

In some embodiments, the reflective layer may be a nano-aluminum thin film layer, i.e., a nano-thin film layer formed of aluminum, since aluminum has good reflectivity to near-ultraviolet light, visible light, and near-infrared light. The thickness of the nano aluminum film layer can be adjusted according to the thickness of other film layers, so that the light-emitting structure layer 1 is ensured to form an optical microcavity, and the formation and the transmission of light rays are realized. Optionally, the thickness of the nano aluminum thin film layer is generally not less than 100 nm to ensure an effective reflection effect, and is generally not greater than 300 nm to avoid the influence on the arrangement of other film layers such as the anode 10 and the hole transport layer 20 caused by the excessively thick reflection layer film layer.

In addition, a nano aluminum film layer can be prepared by Physical Vapor Deposition (PVD), and the nano aluminum film layer and the anode material can be deposited in the same chamber in the preparation process, so that the process is reduced, and the cost is reduced. Of course, the nano aluminum thin film layer may also be prepared by other methods, which is not limited to this.

Although the reflective layer (second light extraction enhancement layer 80) and the anode 10 shown in fig. 6 are stacked in two layers, in practice, the reflective layer may be doped on the surface of the anode 10 in whole or in part, and mainly functions to improve the roughness of the surface of the anode 10, thereby improving the reflectivity of the surface of the anode 10.

It is understood that the reflective layer can be a nano-film layer formed by other high-reflectivity materials, such as gold, in addition to the nano-aluminum film layer. And the action and the preparation principle are similar to those of the nano aluminum film layer.

With reference to fig. 6, in the present embodiment, a first light-exiting enhancement layer 90 is disposed on a side of the polarization layer 110 away from the anode 50, and the first light-exiting enhancement layer 90 may also be referred to as an anti-reflection layer. The first light extraction enhancement layer 90 comprises a first antireflection layer 901 and a second antireflection layer 902; the first antireflection layer 901 is disposed on the light exit side of the polarizer layer 110, the second antireflection layer 902 is disposed on a side of the first antireflection layer 901 away from the polarizer layer 110, and the refractive index of the first antireflection layer 901 is smaller than the refractive index of the second antireflection layer 902.

Specifically, the antireflection layer requires a high transmittance, a high refractive index (greater than the refractive index of the cathode 50), because the refractive index of the cathode 50 is very low, after the first antireflection layer 901 and the second antireflection layer 902 are sequentially arranged on the cathode 50, a multi-film structure in which the refractive index increases in the light outgoing direction can be obtained, and therefore when light passes through the antireflection layer, reflected light generated on the upper surface and the lower surface of the film layer interferes with each other, so that part of reflected light is offset, reflected light between the film layers can be reduced, the number of light transmitting through the film layers is increased, and stray light in the structure is reduced or eliminated. Since the antireflection film has different antireflection effects for different widths of spectra, the antireflection film is configured to have a double-layer structure, that is, the antireflection film includes a first antireflection layer 901 and a second antireflection layer 902, in order to achieve a good antireflection effect in a wider spectral region. It is to be understood that the antireflection film may also include only a single layer structure, or include three or more layers, according to actual needs.

In some embodiments, the first antireflective layer 901 has a refractive index of 1.4 to 1.5 and the second antireflective layer 902 has a refractive index of 1.6 to 1.9. More specifically, the first anti-reflective layer 901 may employ porous silicon dioxide (SiO) having a refractive index of 1.4 to 1.5 ₂ ) The porous silicon dioxide material has the advantages of low cost, easy acquisition and the like, and has higher strength, so that the light transmittance can be improved, and the crack resistance of the display panel can be improved. The second anti-reflective layer 902 may be made of silicon nitride (SiN) having a refractive index of 1.9 or zirconium oxide (ZrO) having a refractive index of 1.6 to 1.8, which may improve alkali resistance and water-oxygen barrier properties in addition to light transmittance. Of course, the first antireflection layer 901 or the second antireflection layer 902 may also be made of other feasible materials, as long as the requirement of higher refractive index can be met, and the refractive index of the first antireflection layer 901 is smaller than the refractive index of the second antireflection layer 902, which is not particularly limited.

More specifically, the thicknesses of the first antireflection layer 901 and the second antireflection layer 902 may be set according to actual requirements, and each layer may generally achieve a good antireflection effect when reaching at least 100 nm, but if being too thick, the overall thickness of the display panel may be increased, so generally, the thicknesses of the first antireflection layer 901 and the second antireflection layer 902 are preferably not more than 500 nm.

In some embodiments, the first anti-reflective layer 901 and the second anti-reflective layer 902 may be sequentially prepared by a Chemical Vapor Deposition (CVD) method.

Through the reflective layer, the first anti-reflective layer 901 and the second anti-reflective layer 902 of the above embodiments, on one hand, the reflection effect of the light emitted by the light emitting layer 30 at the anode 10 can be improved, and on the other hand, the transmittance of the light at the light emitting side can be improved, so that the light emitting efficiency of the device is finally improved.

In addition, referring to fig. 7, fig. 7 is a schematic structural diagram of another display panel according to an embodiment of the present invention. As shown in fig. 7, in the present embodiment, the display panel further includes a planarization layer 100 disposed on the light exit side of the polarizing layer 110, in addition to the display panel shown in fig. 6. Moreover, a second antireflection layer 902 is disposed on one side of the planarization layer 100 away from the light emitting structure layer 1, and a plurality of grooves are disposed on one side of the second antireflection layer 902 adjacent to the planarization layer 100; the first antireflection layer 901 includes a plurality of antireflection units, which are respectively embedded in the grooves, and the refractive index of the first antireflection layer 901 is smaller than the refractive index of the second antireflection layer 902.

Specifically, in this embodiment, relative to the display panel structure shown in fig. 6, the first antireflection layer 901 is no longer a continuous film layer structure, but the first antireflection layer 901 is set as a plurality of independent sub-units, that is, antireflection units, so that the exit direction of light passing through the first antireflection layer 901 and the second antireflection layer 902 can be better changed, and the total reflection of light with a large incident angle at the film layer interface is reduced, which is based on the following principle: when light with a large incident angle passes through the antireflection layer, since the second antireflection layer 902 is embedded with a plurality of antireflection units of the first antireflection layer 901, and the refractive indexes of the first antireflection layer 901 and the second antireflection layer 902 are different, the direction of light passing out can be changed, so that total internal reflection can be reduced, and the light extraction efficiency can be improved.

Further, referring to fig. 8-10, fig. 8-10 are schematic top-view structural diagrams of three display panels according to embodiments of the present invention, respectively. As shown in fig. 8-10, in some embodiments, the light emitting structure layer 1 includes a plurality of pixel openings, and each pixel opening is used for forming a red, green or blue sub-pixel structure 2.

And, the orthographic projection of a single antireflection unit or a plurality of adjacent antireflection units on the light emitting structure layer 1 is a fully-closed pattern or a partially-closed pattern, and the fully-closed pattern or the partially-closed pattern surrounds the pixel opening, i.e. surrounds the sub-pixel structure 2.

With the adoption of the arrangement, under the effect of the antireflection unit, when light rays with large incident angles emitted from the sub-pixel structure 2 pass through the antireflection layer, the total internal reflection can be reduced better, and the light extraction efficiency is improved.

Referring to fig. 8, four adjacent antireflection units form a partially discontinuous partially closed diamond-shaped ring pattern structure, and the sub-pixel structure 2 is located at the center of the semi-closed diamond-shaped ring pattern structure.

Referring to fig. 9, a single anti-reflection unit forms a continuous fully enclosed hexagonal ring structure, and the sub-pixel structure 2 is located at the center of the fully enclosed hexagonal ring structure.

Referring to fig. 10, a single anti-reflection unit forms a continuous, fully enclosed circular ring structure, and the sub-pixel structure 2 is located at the center of the fully enclosed circular ring structure.

It is understood that, in addition to the fully-closed pattern or partially-closed pattern structure shown in fig. 8-10, the orthographic projection of a single antireflection unit or a plurality of adjacent antireflection units on the light emitting structure layer 1 may be other fully-closed patterns or partially-closed patterns, such as fully-closed or partially-closed octagonal rings, as long as the total internal reflection can be conveniently reduced and the light extraction efficiency can be improved.

It should be noted that the thicknesses, materials, etc. of the antireflection layers shown in fig. 8 to 10 may be the same as those shown in fig. 6, and will not be described in detail here.

In addition, since the structures shown in fig. 8 to 10 require patterning of the anti-reflective layer, i.e., processing to obtain a fully or partially closed pattern, the fabrication process is different from that of the structure shown in fig. 6. In some embodiments, the process for preparing an antireflective layer comprises: firstly, cleaning the surface of a cathode 50, and then forming a planarization layer 100 on the surface of the cathode 50 by using a CVD method or an ink-jet printing method; then, depositing a layer of silicon dioxide or other feasible materials by using a CVD method to obtain a first antireflection layer 901; then, coating photoresist on the surface of the first anti-reflection layer 901, and etching the required pattern by exposure and development; then, etching is performed by using a sodium hydroxide solution to finally obtain a patterned first antireflection layer 901, and a plurality of antireflection units are obtained; and then the second anti-reflective layer 902 is printed on the surface of the first anti-reflective layer 901 by a printing process (ink jet printing). The planarization layer 100 mainly ensures that the first anti-reflective layer 901 is formed on the planarized film layer. Therefore, the preparation process is simple and effective.

It should be noted that the above embodiments are all described with respect to the display panel with the top-out structure, and actually, the light-out enhancement layer of the present invention can also be applied to the display panel with the bottom-out structure. Referring to fig. 11, fig. 11 is a schematic structural diagram of another display panel according to an embodiment of the present invention. As shown in fig. 11, the OLED device corresponding to the display panel in this embodiment is a bottom emission structure, that is, the side where the anode 10 is located is a light-emitting side, the anode 10 is a transparent structure, and the cathode 50 is an opaque structure for reflecting light. The light emitting structure layer 1 includes an anode 10, a hole transport layer 20, a light emitting layer 30, an electron transport layer 40, and a cathode 50, which are stacked, and the hole transport layer 20, the light emitting layer 30, and the electron transport layer 40 constitute a light emitting material layer.

Further, it is understood that, in addition to the film layer structure shown in fig. 11, the light emitting structure layer 1 may further include a hole injection layer between the hole transport layer 20 and the anode 10, or may further include an electron injection layer between the electron transport layer 40 and the cathode 50, or may also not include the electron transport layer 40, and the like, without being limited in particular.

With reference to fig. 11, in the present embodiment, a second light-exiting enhancement layer 80 is further disposed on a side of the first electrode, i.e., the cathode 50, close to the light-emitting material layer (between the cathode 50 and the light-emitting material layer), and the second light-exiting enhancement layer 80 can also be referred to as a reflective layer.

Although the reflective layer and the cathode 50 are shown in fig. 11 as a stacked two-layer structure, the reflective layer may be doped entirely or partially into the surface of the cathode 50, and the effect is mainly to improve the roughness of the surface of the cathode 50, thereby improving the reflectivity of the surface of the cathode 50.

With reference to fig. 11, in the present embodiment, a first light-exiting enhancement layer 90 is disposed on a side of the polarization layer 110 away from the anode 10, and the first light-exiting enhancement layer 90 may also be referred to as an anti-reflection layer. The first light extraction enhancement layer 90 comprises a first and a second antireflective layer 901, 902; the first antireflection layer 901 is disposed on the light exit side of the polarizing layer 110, the second antireflection layer 902 is disposed on one side of the first antireflection layer 901 away from the polarizing layer 110, and the refractive index of the first antireflection layer 901 is smaller than the refractive index of the second antireflection layer 902.

It should be noted that the structures, materials, principles, manufacturing methods, and effects of the reflective layer and the anti-reflective layer in the structure shown in fig. 11 are similar to those of the reflective layer and the anti-reflective layer in fig. 6, and the difference is mainly that the arrangement position needs to be adjusted according to the light emitting principles of top light emission and bottom light emission, so the structures, materials, principles, manufacturing methods, and effects of the reflective layer and the anti-reflective layer in the structure shown in fig. 11 are not described in detail, and reference may be made to the corresponding text description part of fig. 6.

In addition, based on the same principle, as shown in fig. 12, the first anti-reflective layer 901 may also be patterned on the basis of the anti-reflective layer shown in fig. 11, and the top view of the resulting pattern structure is similar to that shown in fig. 8-10, and therefore will not be shown and described.

It is to be understood that, for convenience of illustration and description in the above embodiments, both the second light exit enhancing layer 80 (i.e., the reflective layer) and the first light exit enhancing layer 90 (i.e., the antireflection layer) are included in the structures shown in fig. 6 to 7 and fig. 11 to 12, but in practice, the display panel may include only one of the second light exit enhancing layer 80 and the first light exit enhancing layer 90.

Exemplary electronic device

Embodiments of the present application also provide an electronic device including the display panel described above as the exemplary display panel section. The electronic equipment can be equipment such as a smart phone, a tablet computer and a digital camera.

In addition, in the present invention, unless otherwise expressly specified or limited, the terms "connected," "stacked," and the like are to be construed broadly, e.g., as meaning permanently connected, detachably connected, or integrally formed; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood according to specific situations by those of ordinary skill in the art.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (10)

1. A display panel, comprising:

a light emitting structure layer;

the polarizing layer is arranged on the light emitting side of the light emitting structure layer;

the first light-emitting enhancement layer is arranged on one side, far away from the light-emitting structure layer, of the polarizing layer; and the packaging layer is arranged on one side, away from the polarizing layer, of the first light emergent enhancement layer.

2. The display panel of claim 1, further comprising a second light extraction enhancement layer;

the second light-emitting enhancement layer is arranged on the backlight side of the light-emitting structure layer and used for reflecting part of light emitted by the light-emitting structure layer to the light-emitting side of the light-emitting structure layer.

3. The display panel according to claim 1, wherein the light emitting structure layer comprises a first electrode, a second electrode, and a light emitting material layer between the first electrode and the second electrode; wherein the first electrode is positioned at the backlight side of the light emitting structure layer;

the second light-emitting enhancement layer comprises a reflecting layer arranged on one side, close to the luminescent material layer, of the first electrode.

4. The display panel according to claim 3, wherein the reflective layer is a nano aluminum thin film layer; optionally, the thickness of the nano aluminum thin film layer is 100-300 nm.

5. The display panel of claim 1, wherein the first light exit enhancement layer comprises a first anti-reflection layer and a second anti-reflection layer, the first anti-reflection layer is disposed on the light exit side of the polarizing layer, and the second anti-reflection layer is disposed on the side of the first anti-reflection layer away from the polarizing layer;

and the refractive index of the first antireflection layer is smaller than that of the second antireflection layer.

6. The display panel according to claim 1, wherein a planarization layer is disposed on a light-emitting side of the polarization layer, the second anti-reflection layer is disposed on a side of the planarization layer away from the polarization layer, and a plurality of grooves are disposed on a side of the second anti-reflection layer adjacent to the planarization layer, the first anti-reflection layer comprises a plurality of anti-reflection units, and the plurality of anti-reflection units are respectively embedded in the grooves;

and the refractive index of the first antireflection layer is smaller than that of the second antireflection layer.

7. The display panel according to claim 5 or 6, wherein the first anti-reflective layer has a refractive index of 1.4 to 1.5, and the second anti-reflective layer has a refractive index of 1.6 to 1.9.

8. The display panel according to claim 6, wherein the light emitting structure layer comprises a plurality of pixel openings; the orthographic projection of the single antireflection unit or the plurality of adjacent antireflection units on the light emitting structure layer is a fully-closed graph or a partially-closed graph, and the fully-closed graph or the partially-closed graph surrounds the pixel opening.

9. The display panel according to claim 5, 6 or 8, wherein the material of the first anti-reflective layer comprises silicon dioxide, and the material of the second anti-reflective layer comprises silicon nitride or zirconium oxide;

optionally, the first antireflection layer and the second antireflection layer each have a thickness of 100 to 500 nm.

10. An electronic device characterized by comprising the display panel of any one of claims 1 to 9.

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