CN115172224A - Polishing device dressing method, polishing device and chemical mechanical polishing equipment - Google Patents
Polishing device dressing method, polishing device and chemical mechanical polishing equipment Download PDFInfo
- Publication number
- CN115172224A CN115172224A CN202210914012.XA CN202210914012A CN115172224A CN 115172224 A CN115172224 A CN 115172224A CN 202210914012 A CN202210914012 A CN 202210914012A CN 115172224 A CN115172224 A CN 115172224A
- Authority
- CN
- China
- Prior art keywords
- trimming
- head
- area
- dressing
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 201
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000000126 substance Substances 0.000 title claims abstract description 12
- 238000009966 trimming Methods 0.000 claims abstract description 213
- 230000008569 process Effects 0.000 claims abstract description 23
- 230000002159 abnormal effect Effects 0.000 claims description 57
- 238000001514 detection method Methods 0.000 claims description 28
- 230000003750 conditioning effect Effects 0.000 claims description 14
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 9
- 230000008859 change Effects 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 19
- 238000012806 monitoring device Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The invention provides a polishing device dressing method, a polishing device and a chemical mechanical polishing device, wherein the polishing device comprises a polishing pad and a dressing device, a dressing head arranged corresponding to the polishing pad is arranged in the dressing device, and the dressing method comprises the following steps: obtaining the loss amount of each position of the polishing pad; dividing the surface of the polishing pad into a plurality of trimming areas based on the diameter of the trimming head, and selecting one of the trimming areas as a reference trimming area; calculating a first average loss amount in each of the trimming areas based on the loss amount; and adjusting the rotating speed of the trimming head in each trimming area based on the corresponding relation between each trimming area and the first average loss amount of the reference trimming area. The unevenness generated on the surface of the polishing pad in the grinding process is eliminated through the change of the rotating speed of the dressing head, the rotating speed adjusting process of the dressing head is fast, the advantage of short delay is achieved, and the dressing effect on the surface of the polishing pad is better.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing of wafers, in particular to a polishing device trimming method, a polishing device and chemical mechanical polishing equipment.
Background
The chemical mechanical polishing equipment is mainly used for carrying out a planarization process on a wafer, the wafer and a polishing pad move relatively under the environment of polishing solution, and the planarization of the wafer is realized by means of chemical corrosion and mechanical friction. The polishing pad generates loss in the process of grinding the wafer, and because the relative movement track of the polishing pad and the wafer is uneven, the loss amount of each position on the surface of the polishing pad is uneven, and the uneven surface of the polishing pad easily causes grinding defects on the surface of the wafer, the surface of the polishing pad needs to be dressed in real time by using a dressing device, so that the uneven surface of the polishing pad is eliminated.
In the prior art, in the swing process of the dressing device, an operator often sets the pressure of the dressing head at different positions of the polishing pad according to experience to reduce the non-uniformity of the loss of the polishing pad, but the pressure of the dressing head on the polishing pad is applied by a cylinder or an air bag, the pressure changing process has certain delay, and the dressing effect is poor.
Disclosure of Invention
Therefore, in order to overcome the defect of poor effect of trimming the surface unevenness of the polishing pad in the prior art, the invention provides a trimming method of a polishing device, the polishing device and chemical mechanical polishing equipment.
In a first aspect, the present invention provides a dressing method for a polishing apparatus including a polishing pad and a dressing apparatus in which a dressing head provided corresponding to the polishing pad is arranged, the dressing method comprising the steps of:
obtaining the loss amount of each position of the polishing pad;
dividing the surface of the polishing pad into a plurality of trimming areas based on the diameter of the trimming head, and selecting one of the trimming areas as a reference trimming area;
calculating a first average loss amount in each of the trimming areas based on the loss amounts;
and adjusting the rotating speed of the trimming head in each trimming area based on the corresponding relation between each trimming area and the first average loss amount of the reference trimming area.
Optionally, the adjusting the rotation speed of the trimming head in each of the trimming regions based on the correspondence between each of the trimming regions and the first average loss amount of the reference trimming region includes:
judging a trimming area where the trimming head is located, and if the trimming head is located in the reference trimming area, adjusting the rotating speed of the trimming head located in the reference trimming area to a first reference rotating speed; and if the rotating speed of the trimming head is in the other trimming areas, calculating a first ratio of the first average loss amount of the trimming area to the first average loss amount of the reference trimming area, and adjusting the rotating speed of the trimming head in the other trimming areas based on the first ratio and the first reference rotating speed.
Optionally, the judging a trimming area where the trimming head is located includes:
establishing a reference coordinate system on the surface of the polishing pad by taking the center of the polishing pad as an origin;
solving a first coordinate value of a supporting shaft of the trimming device in the reference coordinate system;
obtaining the rotation angle of the polishing pad, and solving a real-time coordinate system after the reference coordinate system rotates;
acquiring a swing angle of a trimming arm of the polishing device, and solving a second coordinate value of the trimming head in the real-time coordinate system based on the axial line distance between the supporting shaft and the trimming head;
and determining the absolute position of the trimming head on the polishing pad based on the second coordinate value, and obtaining the trimming area where the trimming head is located.
Optionally, the obtaining the wear amount of each position of the polishing pad comprises:
acquiring the displacement of the trimming head in the direction vertical to the surface of the polishing pad at each position in the process of trimming the polishing pad;
based on the displacement, the loss of the trimming head at each position of the polishing pad is calculated.
Optionally, the selecting one of the trimming areas as a reference trimming area includes:
comparing the first average loss amount of each trimming area;
and selecting the trimming area with the maximum or minimum first average loss amount as the reference trimming area.
Optionally, the trimming method further comprises:
judging whether the trimming head moves to an abnormal area or not;
adjusting the rotation speed of the trimming head based on a second average loss amount of the abnormal region when the trimming head moves to the abnormal region;
wherein the process of determining the abnormal region includes:
dividing a plurality of detection areas in the same trimming area;
calculating a second average loss of each detection area;
judging whether the second average loss amount in the same trimming area exceeds a preset abnormal threshold value or not;
and if the second average loss exceeds the preset abnormal threshold, setting a detection area corresponding to the second average loss as an abnormal area.
Optionally, the determining whether the second average loss amount exceeds a preset abnormal threshold includes:
obtaining the absolute value of the difference value between the second average loss amount of the detection area and the first average loss amount of the trimming area where the detection area is located;
calculating a second ratio of the absolute value to the first average loss amount;
and judging whether the second ratio exceeds the abnormal threshold value.
Optionally, the adjusting the rotation speed of the dressing head based on the second average amount of loss of the abnormal region includes:
taking the rotating speed of the trimming head in the trimming area where the abnormal area is located as a second reference rotating speed;
obtaining a third ratio of the first average loss amount of the trimming area where the abnormal area is located to the second average loss amount of the abnormal area;
adjusting the rotation speed of the trimming head based on the second reference rotation speed and the third ratio when the trimming head moves into the abnormal region.
In a second aspect, the present invention provides a polishing apparatus for dressing a polishing pad using the dressing method of the polishing apparatus according to any of the above embodiments.
In a third aspect, the present invention also provides a chemical mechanical polishing apparatus including the polishing device according to any of the above embodiments.
The technical scheme of the invention has the following advantages:
1. according to the dressing method provided by the invention, the loss of each position of the polishing pad is obtained constantly, and when the dressing head enters different dressing areas, the rotating speed of the dressing head is adjusted according to the first average loss in the dressing area, so that the rotating speed of the dressing head in the dressing area with larger first average loss is reduced, and the rotating speed of the dressing area with smaller first average loss is higher, thereby eliminating the nonuniformity of the polishing pad in the grinding process, the rotating speed adjusting process of the dressing head is faster, the delay time of the control process is shorter, and the dressing effect on the surface of the polishing pad is better.
2. According to the trimming method provided by the invention, the reference trimming area is selected, the corresponding rotating speed is adapted to the trimming head when the trimming head is trimmed in the reference trimming area, and then the rotating speed of the trimming head is adjusted according to the first ratio of the first average loss of other trimming areas and the first average loss of the reference trimming area, so that the control of the rotating speed of the trimming head is better and reasonable, and the first average loss of each trimming area can be better adapted.
3. According to the dressing method provided by the invention, a plurality of detection areas are divided in the same dressing area, and an abnormal area with abnormal bulges or abnormal depressions on the surface of the polishing pad is searched in a mode of comparing the second average loss amount of each detection area with the first average loss amount of the dressing area, so that the abnormal part can be eliminated by adjusting the rotating speed when the dressing head enters the abnormal area, and the dressing effect on the surface of the polishing pad is further improved.
4. The finishing method provided by the invention utilizes the mode of setting the reference coordinate system on the surface of the polishing pad, obtains the real-time coordinate system through the rotation angle of the polishing pad, can accurately calculate the absolute position of the surface of the polishing pad where the polishing head is positioned at any time, has simple and reliable calculation mode, has short process time of obtaining the position of the polishing head, and further reduces the delay of adjusting the rotation speed of the polishing head.
5. The polishing device provided by the invention can be used for dressing the surface of the polishing pad by adjusting the rotating speed of the dressing head, has the advantages of small delay and better dressing effect, and has better effect of reducing the unevenness of the surface of the polishing pad.
6. According to the chemical mechanical polishing equipment provided by the invention, the polishing pad dressed by the polishing device using the dressing method is used for polishing the wafer, the nonuniformity of the surface of the polishing pad is small, the wafer can be better polished, and the finished product quality of the wafer is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic view of a polishing apparatus provided in an embodiment of the present invention;
FIG. 2 is a flowchart of a polishing method by the polishing apparatus provided in the embodiment of the present invention;
FIG. 3 is a schematic diagram of a configuration for defining a conditioning region on a surface of a polishing pad in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of a detection area within the pad conditioning area according to an embodiment of the present invention.
Description of reference numerals:
1. a polishing pad; 2. a polishing table; 3. a first motor; 4. a first encoder; 5. a fixing ring; 6. a fixed shaft; 7. a support shaft; 8. a second motor; 9. a second encoder; 10. a trimming arm; 11. trimming the shaft; 12. trimming the head; 13. a sensor; 14. a monitoring device; 15. a third motor; 16. a pressure device.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Furthermore, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The present embodiment provides a dressing method of a polishing apparatus. Referring to fig. 1, the polishing apparatus includes: polishing pad 1, polishing platform 2, first motor 3, solid fixed ring 5, fixed axle 6 and trimming device. Polishing pad 1 is connected on polishing platform 2, and first motor 3 is used for driving polishing platform 2 and polishing pad 1 and rotates around self axis, and solid fixed ring 5 is used for fixed wafer, and solid fixed ring 5 passes through fixed axle 6 to be connected in polishing pad 1 top, makes wafer and 1 surface contact of polishing pad, carries out grinding and polishing to the wafer through polishing pad 1's rotation.
Referring to fig. 1, the finishing assembly further includes: a support shaft 7, a second motor 8, a trimming arm 10, a trimming shaft 11, a trimming head 12, a third motor 15 and a pressure device 16. The back shaft 7 is located one side of polishing pad 1, and the arm 10 of repairing is connected at back shaft 7 top, and the arm 10 of repairing extends to polishing pad 1 top, and the connection is in arm 10 downside through the rotation of trimming shaft 11 to the trimming head 12, and third motor 15 is connected with trimming shaft 11 for drive trimming shaft 11 rotates with trimming head 12. The second motor 8 is connected with the supporting shaft 7 and used for driving the supporting shaft 7 and the supporting arm to swing and driving the trimming head 12 to swing back and forth in the radial direction of the polishing pad 1. The dressing shaft 11 can slide on the polishing pad 1 in the vertical direction, the pressure device 16 is connected to the top of the dressing shaft 11, the pressure device 16 provides downward pressure for the dressing shaft 11 and the dressing shaft 11, so that the dressing head 12 is in contact with the surface of the polishing pad 1, and the polishing pad 1 is subjected to friction dressing through the relative rotation of the dressing head 12 and the polishing pad 1.
In the prior art, the dressing of the surface of the polishing pad 1 by the dressing head 12 is performed by setting the pressure of the dressing head 12 at different positions of the polishing pad 1 by an operator according to experience, so as to reduce the unevenness of the surface wear of the polishing pad 1. The process of pressure change is somewhat delayed, however, the oscillating speed of the trimmer head 12 is faster, and hence the elimination of non-uniformities by means of pressure change is poor.
In order to solve the above problem, referring to fig. 2, the trimming method provided by this embodiment includes the following steps:
step S1: the amount of wear of each position of the polishing pad 1 is obtained.
Each position of the polishing pad 1 refers to any point of the surface of the polishing pad 1, which is used for grinding a wafer, the loss amount refers to a difference value between an initial thickness value of the polishing pad 1 and a thickness of the polishing pad 1 after the wafer is ground, the surface loss distribution of the polishing pad 1 at any time can be obtained by obtaining the loss amount of each position of the polishing pad 1, and in practical application, a surface loss distribution map of the polishing pad 1 at any time can be generated based on the surface loss distribution according to requirements, so that related personnel can conveniently check the surface loss distribution map.
Step S2: the surface of the polishing pad 1 is divided into a plurality of dressing areas, and one of the dressing areas is selected as a reference dressing area.
The trimming area is divided based on the radius of the trimming head 12, and any one of the reference trimming areas can be selected.
Referring to fig. 3, in the present embodiment, the dressing region is divided into a plurality of dressing regions in sequence from the center of the polishing pad 1 to the edge thereof in the radial direction of the polishing pad 1, that is, the dressing region at the center is circular, the remaining dressing regions are annular, and the width of each dressing region is half of the radius of the dressing head 12. The dressing head 12 passes each dressing area in turn during the oscillation in the radial direction of the polishing pad 1, and the dressing head 12 can cover at least two adjacent dressing areas so that the transition at the boundary of the two adjacent dressing areas is good.
And step S3: a first average loss amount in each of the trimming areas is calculated based on the loss amounts.
In this embodiment, according to the distribution loss map of the surface of the polishing pad 1 obtained in real time in step S1, the measured points and the corresponding loss values in the same trimming area are added and divided by the number of the measured loss position points, so as to obtain the first average loss in each trimming area.
And step S4: the rotation speed of the trimming head 12 in each trimming region is adjusted based on the correspondence relationship of each trimming region and the first average loss amount of the reference trimming region.
The dressing region where the dressing head 12 is located refers to the dressing region where the projected point of the axis of the dressing head 12 on the polishing pad 1 is located.
The dressing head 12 keeps constant pressure acting on the polishing pad 1, and the dressing time of the dressing head 12 to each dressing area is consistent, the dressing thickness of the dressing head 12 to the polishing pad 1 is different under different rotating speeds, the faster the rotating speed of the dressing head 12 is, the larger the thickness of the polishing pad 1 dressed and abraded, and conversely, the slower the rotating speed of the dressing head 12 is, the smaller the thickness of the polishing pad 1 dressed and abraded. Therefore, the rotational speed of the dressing head 12 can be controlled to increase in the region where the first average loss amount is small and decrease in the rotational speed in the region where the first average loss amount is large, thereby achieving the object of reducing the surface unevenness of the polishing pad 1.
The rotation speed of the trimming head 12 is controlled by the third motor 15, the rotation speed of the trimming head 12 can be set between 0rpm and 120rpm, the rotation speed of the trimming head 12 is usually between 60rpm and 90rpm during the trimming process, the rotation acceleration of the trimming head 12 is 1000rpm/s, and only 0.01s is required if the rotation speed of the trimming head 12 is changed by 10 rpm. Therefore, when the dressing head 12 moves in different dressing areas, the change of the rotation speed of the dressing head 12 is sensitive, the delay is short, the unevenness of the surface of the polishing pad 1 can be better reduced, and a better dressing effect can be achieved.
In this embodiment, the process of selecting one of the trimming areas as the reference trimming area includes the following steps:
comparing the first average loss amount of each trimming area;
and selecting the trimming area with the maximum or minimum first average loss amount as the reference trimming area.
As an alternative embodiment, the reference trimming area may also be selected from the trimming areas located at the innermost side or the outermost side, or may be selected in other manners, and may be adjusted according to actual needs, and the invention is not limited thereto.
In the present embodiment, adjusting the rotation speed of the trimming head 12 in each trimming region based on the correspondence between each trimming region and the first average loss amount of the reference trimming region includes the steps of:
judging a trimming area where the trimming head 12 is located, and if the trimming head is located in the reference trimming area, adjusting the rotating speed of the trimming head 12 located in the reference trimming area to be a first reference rotating speed;
if the first average loss amount is within the other trimming region, a first ratio of the first average loss amount of the trimming region to the first average loss amount of the reference trimming region is calculated, and the rotation speed of the trimming head 12 within the other trimming region is adjusted based on the first ratio and the first reference rotation speed.
For example: referring to FIG. 2, the dressing area with the largest first average loss value is selected as the reference area from the center to the outer side of the polishing pad 1, and the dressing areas are sequentially A 1 、A 2 、...、A N The first average loss in each of the trimming areas is W in order 1 、W 2 、...、W N . Wherein the trimming area A 2 First average loss magnitude W 2 At its maximum, the first average amount of wear of the trimming head 12 is W based on the experience of the operator 2 The rotational speed of time is omega 2 I.e. the first reference speed is ω 2 . A first ratio of the first loss amount of the reference trimming area to the other trimming areas is W 2 /W 1 ＝1.1、W 2 /W 3 ＝1.15、…、W 2 /W 3 =1.05, the rotational speed of the dressing head 12 in the other dressing area is ω 1 ＝ω 2 ＊1.1、ω 3 ＝ω 2 ＊1.15、…、ω n ＝ω 2 1.05, so that the rotating speed of the trimming head 12 is adjusted according to the trimming positionThe first average loss amount of the whole area is correspondingly increased or decreased in rotation speed.
Further, the process of acquiring the position of the trimming head 12 includes the following steps:
establishing a reference coordinate system on the surface of the polishing pad 1 by taking the center of the polishing pad 1 as an origin;
calculating a first coordinate value of a supporting shaft 7 of the polishing device in a reference coordinate system;
acquiring the rotation angle of the polishing pad 1, and solving a real-time coordinate system after the rotation of the reference coordinate system;
acquiring a swing angle of a trimming arm 10 of the polishing device, and solving a second coordinate value of a trimming head 12 in the real-time coordinate system based on a projected distance between the axis of a support shaft 7 and the axis of a trimming shaft 11 on the surface of the polishing pad 1;
based on the second coordinate value, the absolute position of the dressing head 12 on the polishing pad 1 is determined, and the dressing region where the dressing head 12 is located is obtained.
Specifically, as shown in fig. 3, the center point of the surface of the polishing pad 1 is set as an origin O, and two straight lines extending in the radial direction of the polishing pad 1 and perpendicular to each other are distributed as an X-axis and a Y-axis, thereby forming a planar rectangular coordinate system X-Y, i.e., a reference coordinate system, on the surface of the polishing pad 1.
The first motor 3 is internally provided with a first encoder 4, the first encoder 4 can be used for acquiring the rotation angle alpha of the polishing pad 1 compared with the initial state in real time, and the real-time coordinate system X of the reference coordinate system X-Y after rotation can be acquired through the rotation angle alpha 1 －Y 1 。
The first coordinate value of the support shaft 7 in the reference coordinate system refers to a first coordinate value (X-Y) in the reference coordinate system X-Y of a projected point P of the axis of the support shaft 7 on the surface of the polishing pad 1 p ，Y p ). The second motor 8 is internally provided with a second encoder 9, the rotation angle beta of the trimming arm 10 at any time can be fed back through the second encoder 9, the projection point of the axis of the trimming shaft 11 on the surface of the polishing pad 1 is N, and the rotation angle beta is an included angle between the connecting line of the origin 0 and the projection point P of the supporting shaft 7 and the connecting line of the projection point N of the trimming shaft 11 and the projection point P of the supporting shaft 7.
The distance R between the projected point N and the projected point P is fixed, and the coordinate value (X) of the projected point P in the reference coordinate system is projected through the support shaft 7 p ，Y p ) The dynamic coordinate value (X) of the projection point N in the reference coordinate system at any time can be calculated N ，Y N ). Further, the coordinate value corresponding relation of the projection point P and the projection point N in the same coordinate system can be obtained. Based on the real-time coordinate system X that obtains again 1 －Y 1 Calculating the real-time coordinate system X of the projection point N 1 －Y 1 Second coordinate value (X) of inner N1 ，Y N1 ) The absolute position of the dressing head 12 on the polishing pad 1 is determined.
Wherein X N1 ＝X N cos(-θ)+Y N sin(-θ)，Y N1 ＝-X N sin(-θ)+Y N cos(-θ)。
Finally, a second coordinate value (X) of a projected point N on the surface of the polishing pad 1 based on the obtained axis of the dressing head 12 N1 ，Y N1 ) And then, based on the size and position of the divided trimming area in step S2, the second coordinate value (X) is judged N1 ，Y N1 ) And the polishing head is located in which trimming area, so that the trimming area where the polishing head is located can be judged.
Further, the process of acquiring the amount of wear of each position of the polishing pad 1 includes the steps of:
acquiring the displacement of the dressing head 12 in the direction perpendicular to the surface of the polishing pad 1 at each position during dressing of the polishing pad 1;
based on the displacement amount, the amount of wear of the dressing head 12 at each position of the polishing pad 1 is calculated.
The pressure value is preset, so that the trimming head 12 keeps constant pressure and acts on the polishing pad 1, when the trimming head 12 moves, the polishing pad 1 moves in a direction vertical to the surface direction of the polishing pad 1 due to different surface loss of the polishing pad 1, and the loss value of the surface of the polishing pad 1 compared with the initial state can be calculated through the displacement of the trimming head 12. And then, by combining the above-mentioned coordinate values of the absolute positions of the trimming head 12 on the polishing pad 1, the loss amount of the trimming head 12 passing through the polishing pad 1 at each position is recorded in real time through the trimming process, the loss distribution diagram of the surface of the polishing pad 1 is also changed in real time, and the rotating speed of the trimming head 12 passing through the same trimming area next time is changed according to the change of the real-time loss of the surface of the polishing pad 1, so that the non-uniformity of the surface of the polishing pad 1 can be better eliminated.
In the present embodiment, referring to fig. 1, a sensor 13 is provided on the dressing shaft 11, and the sensor 13 acquires the displacement amount of the dressing head 12 by monitoring the distance between itself and the dressing arm 10.
For example, when the polishing pad 1 is not worn, the dressing head 12 acts on the surface of the polishing pad 1 at a predetermined pressure value, and the sensor 13 is spaced from the dressing arm 10 by a distance L 0 When the polishing pad 1 is worn and the dressing head 12 is applied with the same preset pressure on the surface of the polishing pad 1, the sensor 13 moves downwards along the dressing shaft 11, and the distance between the sensor 13 and the dressing arm 10 is L 1 Then, the amount of wear of the polishing pad 1 at the current position W = L 1 －L 0 。
In the process of polishing the wafer by the polishing pad 1, there are abnormal convex or concave portions on the surface of the polishing pad 1, and the difference between the loss of these abnormal portions and the loss of other portions is large, which affects the first average loss value of the trimming area, and the non-uniformity of the abnormal portion cannot be effectively eliminated when the trimming head 12 trims the abnormal portion at the rotation speed corresponding to the first average loss value of the trimming area.
In order to solve the problem that the surface of the polishing pad 1 has abnormal portions, the dressing method of the present embodiment further includes the steps of:
judging whether the trimming head 12 moves to an abnormal area;
when the trimming head 12 moves to the abnormal region, the rotation speed of the trimming head 12 is adjusted based on the second average loss amount of the abnormal region.
The abnormal area refers to a position where the loss value is abnormal in the trimming area, and the process of determining the abnormal area comprises the following steps:
dividing a plurality of detection areas in the same trimming area;
calculating a second average loss of each detection area;
judging whether the second average loss amount in the same trimming area exceeds a preset abnormal threshold value or not; and if the second average loss exceeds the preset abnormal threshold, setting a detection area corresponding to the second average loss as an abnormal area.
Specifically, referring to fig. 4, the detection region is divided in the circumferential direction of the polishing pad 1, that is, the annular dressing region is divided into a plurality of detection regions in the shape of a sector ring, the number of detection regions is divided according to the diameter size of the polishing pad 1, and the size of each detection region may be uniform or non-uniform.
As with the first average loss amount in each of the trimming areas obtained in step S3, the second average loss amount in each of the detection areas is calculated, and if the second average loss amount in a certain detection area is too large or too small, it is assumed that there is an abnormal portion in the detection area, and therefore the detection area can be set as an abnormal area.
Further, the step of determining whether the second average amount of wear exceeds the abnormal threshold includes the steps of:
calculating the absolute value of the difference value between the second average loss amount of the detection area and the first average loss amount of the trimming area where the detection area is located;
calculating a second ratio of the absolute value to the first average loss amount;
and judging whether the second ratio exceeds an abnormal threshold value.
For example: as shown in fig. 4, in the trimming area a 2 In the trimming area A 2 Has a first average loss amount of W 2 The abnormality threshold is set to 20%. The annular trimming area A 2 Dividing the test area into twelve sector-shaped test areas with the same size, wherein each test area is A in turn along the clockwise direction 21 、A 22 、...、A 212 The average loss amount corresponding to each detection area is W in turn 21 、W 22 、...、W 212 。
If for the detection area A 22 ，|W 2 －W 22 |/W 2 > 20%, detectionRegion A 22 Exceeds a preset abnormal threshold, detects area A 22 Is an abnormal area.
Further, the process of adjusting the rotation speed of the dressing head 12 based on the second average loss amount of the abnormal region includes the steps of:
taking the rotation speed of the trimming head 12 in the trimming area where the abnormal area is located as a second reference rotation speed;
when the dressing head 12 moves into the abnormal region, the value of the rotation speed of the dressing head 12 is adjusted to be a second reference rotation speed multiplied by the second ratio.
For example, the dressing head 12 is in the dressing area A 2 Second reference speed of rotation of ω 2 When the dressing head 12 enters the abnormal area A 22 While in the inner, the rotational speed of the dressing head 12 is adjusted to ω 2 ＊(W 2 /W 22 ) The trimming head 12 can perform corresponding trimming to the abnormal portion.
The present embodiment further provides a polishing apparatus, referring to fig. 1, the polishing apparatus includes a monitoring device 14, the first encoder 4, the second encoder 9 and the sensor 13 described in any of the above embodiments are all in communication connection with the monitoring device 14, the monitoring device 14 can acquire the rotation angle of the polishing pad 1, the swing angle of the conditioning arm 10 and the surface loss amount of the polishing pad 1 monitored by the sensor 13 at any time, the monitoring device 14 is in communication connection with a third motor 15, and the monitoring device 14 controls the rotation speed of the third motor 15 by executing the conditioning method described in any of the above embodiments, so that the conditioning head 12 conditions the corresponding conditioning region at the corresponding rotation speed. The polishing apparatus dresses the polishing pad by using the dressing method described in any of the above embodiments to better eliminate the unevenness of the surface of the polishing pad 1.
The present embodiment further provides a chemical mechanical polishing apparatus, which includes the polishing device, and the polishing device is used to polish the wafer, and the dressing head 12 slows down the non-uniformity of the surface of the polishing pad 1 by adjusting the rotation speed according to the dressing method described in any of the embodiments above, so that the polishing pad 1 has a better polishing effect on the wafer, and the quality of the finished product of the wafer is improved.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (10)
1. A dressing method for a polishing apparatus including a polishing pad and a dressing apparatus in which a dressing head provided corresponding to the polishing pad is arranged, characterized by comprising the steps of:
obtaining the loss amount of each position of the polishing pad;
dividing the surface of the polishing pad into a plurality of trimming areas based on the diameter of the trimming head, and selecting one of the trimming areas as a reference trimming area;
calculating a first average loss amount in each of the trimming areas based on the loss amounts;
and adjusting the rotating speed of the trimming head in each trimming region based on the corresponding relation between each trimming region and the first average loss amount of the reference trimming region.
2. The method of conditioning a polishing apparatus according to claim 1, wherein said adjusting the rotation speed of the conditioning head in each of the conditioning regions based on the correspondence relationship between each of the conditioning regions and the first average amount of loss of the reference conditioning region comprises:
judging a trimming area where the trimming head is located, and if the trimming head is located in the reference trimming area, adjusting the rotating speed of the trimming head located in the reference trimming area to a first reference rotating speed; and if the rotating speed of the trimming head is in the other trimming areas, calculating a first ratio of the first average loss amount of the trimming area to the first average loss amount of the reference trimming area, and adjusting the rotating speed of the trimming head in the other trimming areas based on the first ratio and the first reference rotating speed.
3. The method of claim 2, wherein the determining a dressing area in which the dressing head is located comprises:
establishing a reference coordinate system on the surface of the polishing pad by taking the center of the polishing pad as an origin;
obtaining a first coordinate value of a supporting shaft of the trimming device in the reference coordinate system;
acquiring the rotation angle of the polishing pad, and solving a real-time coordinate system after the reference coordinate system rotates;
acquiring a swing angle of a trimming arm of the polishing device, and solving a second coordinate value of the trimming head in the real-time coordinate system based on the axial line distance between the supporting shaft and the trimming head;
and determining the absolute position of the trimming head on the polishing pad based on the second coordinate value, and obtaining the trimming area where the trimming head is positioned.
4. The method of claim 3, wherein the obtaining the amount of wear at each location of the polishing pad comprises:
acquiring displacement of the dressing head in the direction vertical to the surface of the polishing pad at each position in the process of dressing the polishing pad;
based on the displacement, the loss amount of the dressing head at each position of the polishing pad is calculated.
5. The method of claim 1, wherein said selecting one of said dressing areas as a reference dressing area comprises:
comparing the first average loss amount of each trimming area;
and selecting the trimming area with the maximum or minimum first average loss amount as the reference trimming area.
6. The method of conditioning a polishing apparatus as recited in claim 1, further comprising:
judging whether the trimming head moves to an abnormal area or not;
adjusting the rotation speed of the trimming head based on a second average loss amount of the abnormal region when the trimming head moves to the abnormal region;
wherein the process of determining the abnormal region includes:
dividing a plurality of detection areas in the same trimming area;
calculating a second average loss of each detection area;
judging whether the second average loss amount in the same trimming area exceeds a preset abnormal threshold value or not;
and if the second average loss exceeds the preset abnormal threshold, setting a detection area corresponding to the second average loss as an abnormal area.
7. The method of claim 6, wherein determining whether the second average amount of wear exceeds a predetermined anomaly threshold comprises:
calculating the absolute value of the difference value between the second average loss amount of the detection area and the first average loss amount of the trimming area where the detection area is located;
calculating a second ratio of the absolute value to the first average loss amount;
and judging whether the second ratio exceeds the abnormal threshold value.
8. The method of conditioning a polishing apparatus according to claim 7, wherein the adjusting the rotation speed of the conditioning head based on the second average amount of loss in the abnormal region includes:
taking the rotating speed of the trimming head in the trimming area where the abnormal area is located as a second reference rotating speed;
obtaining a third ratio of the first average loss amount of the trimming area where the abnormal area is located to the second average loss amount of the abnormal area;
adjusting the rotation speed of the trimming head based on the second reference rotation speed and the third ratio when the trimming head moves into the abnormal region.
9. A polishing apparatus characterized in that the polishing apparatus dresses the polishing pad using the polishing apparatus dressing method as set forth in any one of claims 1 to 8.
10. A chemical mechanical polishing apparatus comprising the polishing device according to claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210914012.XA CN115172224A (en) | 2022-07-29 | 2022-07-29 | Polishing device dressing method, polishing device and chemical mechanical polishing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210914012.XA CN115172224A (en) | 2022-07-29 | 2022-07-29 | Polishing device dressing method, polishing device and chemical mechanical polishing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115172224A true CN115172224A (en) | 2022-10-11 |
Family
ID=83477678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210914012.XA Pending CN115172224A (en) | 2022-07-29 | 2022-07-29 | Polishing device dressing method, polishing device and chemical mechanical polishing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115172224A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116276624A (en) * | 2023-03-29 | 2023-06-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
| CN117718876A (en) * | 2024-02-07 | 2024-03-19 | 华海清科股份有限公司 | Monitoring method for chemical mechanical polishing and chemical mechanical polishing equipment |
-
2022
- 2022-07-29 CN CN202210914012.XA patent/CN115172224A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116276624A (en) * | 2023-03-29 | 2023-06-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
| CN116276624B (en) * | 2023-03-29 | 2024-01-23 | 江苏山水半导体科技有限公司 | Chemical mechanical polishing method for improving PSG removal rate and consistency thereof |
| CN117718876A (en) * | 2024-02-07 | 2024-03-19 | 华海清科股份有限公司 | Monitoring method for chemical mechanical polishing and chemical mechanical polishing equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115172224A (en) | Polishing device dressing method, polishing device and chemical mechanical polishing equipment | |
| TWI704979B (en) | Polishing apparatus, method for controlling the same, and method for outputting a dressing condition | |
| TWI556911B (en) | Method and apparatus for monitoring a polishing surface of a polishing pad used in polishing apparatus | |
| TWI658898B (en) | Monitoring method and grinding device for trimming process | |
| US9211631B2 (en) | Grinding wheel truing tool and manufacturing method thereof, and truing apparatus, method for manufacturing grinding wheel and wafer edge grinding apparatus using the same | |
| US20210023672A1 (en) | Polishing-amount simulation method for buffing, and buffing apparatus | |
| TWI554361B (en) | Method of adjusting profile of a polishing member used in a polishing apparatus, and polishing apparatus | |
| TWI573659B (en) | Measuring method of surface roughness of polishing pad, cmp method, apparatus for measuring surface roughness of polishing pad | |
| US20120270477A1 (en) | Measurement of pad thickness and control of conditioning | |
| KR102371938B1 (en) | Substrate polishing apparatus and method | |
| JPH11207572A (en) | Polishing device incorporating wear monitoring means for polishing pad, and control method for the same | |
| US6702646B1 (en) | Method and apparatus for monitoring polishing plate condition | |
| US9676076B2 (en) | Polishing method and polishing apparatus | |
| TW201201264A (en) | Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder | |
| CN117140341A (en) | Cutting rate monitoring of pad conditioner | |
| JP2022545538A (en) | Asymmetry correction with oriented wafer loading | |
| CN111496668A (en) | Polishing apparatus and dressing method for polishing member | |
| CN208663464U (en) | Chemical mechanical polishing device | |
| JP2012245589A (en) | Manufacturing method of semiconductor device, and chemical mechanical polishing device | |
| JP2002307303A (en) | Both face grinding method for thin plate disclike workpiece and device thereof | |
| CN114074288A (en) | Substrate processing apparatus, dressing control method for polishing member, and storage medium | |
| JP6539467B2 (en) | Grinding machine | |
| TWI477354B (en) | Cmp apparatus | |
| JP2024024162A (en) | Wafer one-side polishing method, wafer manufacturing method and wafer one-side polishing device | |
| JP7113737B2 (en) | Polishing device and dressing method for polishing member |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing Applicant after: Beijing Jingyi Precision Technology Co.,Ltd. Address before: 100176 101, floor 2, building 2, No. 1, Taihe Third Street, economic and Technological Development Zone, Daxing District, Beijing Applicant before: Beijing ShuoKe precision electronic equipment Co.,Ltd. |
|
| CB02 | Change of applicant information |