CN115170472A - Method and device for observing distribution and morphology of multiple conductive channels of resistive random access memory - Google Patents
Method and device for observing distribution and morphology of multiple conductive channels of resistive random access memory Download PDFInfo
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Abstract
The application relates to a method and a device for observing distribution and morphology of a plurality of conductive channels of a resistive random access memory, wherein the method comprises the following steps: scanning an object to be observed to obtain current distribution two-dimensional slice data sets of the object to be observed at different depths; performing three-dimensional reconstruction of a geometric model on the current distribution two-dimensional slice data sets with different depths to obtain a three-dimensional image of current distribution (comprising a color image, a gray image and the like, wherein the color image can be used for observing the appearance of a conductive channel, and the gray image can be used for observing the number, the distribution position and the three-dimensional appearance of the conductive channel); and adjusting the gray value and/or the transparency of the three-dimensional graph of the current distribution to obtain the number, the distribution position and the morphology state of each conductive channel of the object to be observed. Therefore, a three-dimensional graph is reconstructed by using the cAFM through a layer-by-layer peeling method, so that the number, the distribution position and the three-dimensional appearance of each conductive channel in the dielectric layer are observed.
Description
Technical Field
The application relates to the technical field of conductive channel detection, in particular to a method and a device for observing distribution and appearance of a plurality of conductive channels of a resistive random access memory.
Background
Resistive Random Access Memory (RRAM) changes the resistance of a dielectric layer (metal oxide) by applying a voltage, thereby realizing the on/off of a device. The typical structure is a Metal-Insulator-Metal (MIM) sandwich structure. Under the action of voltage, a conductive channel is formed in the dielectric layer, and at the moment, the device is in a low-resistance state, namely an 'on' state; when reverse voltage is applied, the conductive channel in the dielectric layer is broken, and the device is in a high-resistance state, namely an off state. That is, the switching state of the RRAM is closely related to the variation of the conductive path in the dielectric layer.
In the related art, the conductive channel in the RRAM dielectric layer is mostly formed by metal ions or oxygen vacancies, and the research of the conductive channel is mainly observed by a High Resolution Transmission Electron Microscope (HRTEM), and metal ions such as Ag have been observed at present + 、Cu 2+ Etc. participate in the dynamic process of conduction. The metal ion conductive channel and the dielectric layer have large component difference and high contrast, so the metal ion conductive channel is easily captured by HRTEM; for the conductive channel formed by the oxygen vacancy, the difference between the oxygen vacancy and the component of the oxide dielectric layer is not large, the contrast is low, and the size of the conductive channel is very small, so that the conductive channel is difficult to observe; meanwhile, related technicians use HRTEM to observe the change of crystal lattice at a certain position in the dielectric layer, and guess that the change is an oxygen vacancy conduction channel, but the guess is not strict enough, and only one conduction channel is observed, and more than one conduction channel is definitely formed in the switching process of the device. Therefore, specific distribution positions and morphological states have not been clearly observed so far for a plurality of conductive channels formed by oxygen vacancies.
Disclosure of Invention
The application provides a method and a device for observing distribution and morphology of a plurality of conductive channels of a resistive random access memory, which aim to solve the problems that the specific distribution positions, the number and the morphology states of the conductive channels of various dielectric layers in the related technology are difficult to observe.
An embodiment of a first aspect of the present application provides a method for observing distribution and morphology of multiple conductive channels of a resistive random access memory, including the following steps:
scanning an object to be observed to obtain a current distribution two-dimensional slice data set of the object to be observed at different depths;
performing three-dimensional reconstruction of a geometric model on the current distribution two-dimensional slice data sets at different depths to obtain a three-dimensional image of current distribution; and
and adjusting the gray value and/or the transparency of the three-dimensional graph of the current distribution to obtain the number, the distribution position and the morphology state of each conductive channel of the object to be observed.
According to an embodiment of the present application, the scanning of the object to be observed to obtain the current distribution two-dimensional slice data sets of different depths of the object to be observed includes:
and scanning each pair of the objects to be observed once, stripping a dielectric layer of each layer of the object to be observed until all dielectric layers of the object to be observed are stripped, and obtaining current distribution two-dimensional slice data sets of the object to be observed at different depths.
According to an embodiment of the present application, the object to be observed is a resistance random access memory, and before scanning the object to be observed, the method further includes:
the resistive random access memory is controlled to be in a first state or a second state, wherein the first state is an on-state, and the second state is an off-state.
According to an embodiment of the present application, before scanning the object to be observed, the method further includes:
determining the formation type of the conductive channel of the object to be observed;
and if the type of the conductive channel is formed by oxygen vacancies, controlling the object to be observed to be in a target observation environment.
According to an embodiment of the present application, the target observation environment is at least one of a vacuum observation environment, a nitrogen observation environment, and an argon observation environment.
According to the method for observing the distribution and the appearance of the multiple conductive channels of the resistive random access memory, the object to be observed is scanned to obtain the current distribution two-dimensional slice data sets at different depths of the object to be observed, the three-dimensional reconstruction of the geometric model is carried out to obtain the current distribution three-dimensional graph, and the gray value and/or the transparency of the current distribution three-dimensional graph are/is adjusted, so that the number, the distribution position and the appearance state of the conductive channels of the object to be observed are obtained. Therefore, the problems that the specific distribution positions, the number and the morphology states of various dielectric layer conductive channels in the related technology are difficult to observe are solved, and a three-dimensional graph is reconstructed by using a conductive-Atomic Force Microscope (cAFM) through a layer-by-layer stripping method, so that the number, the distribution positions and the three-dimensional morphology of various conductive channels in the dielectric layer are observed.
An embodiment of a second aspect of the present application provides a device for observing distribution and morphology of multiple conductive channels of a resistive random access memory, including:
the scanning module is used for scanning an object to be observed to obtain current distribution two-dimensional slice data sets of the object to be observed at different depths;
the reconstruction module is used for performing three-dimensional reconstruction of a geometric model on the current distribution two-dimensional slice data sets at different depths to obtain a three-dimensional image of current distribution; and
and the adjusting module is used for adjusting the gray value and/or the transparency of the three-dimensional graph of the current distribution to obtain the number, the distribution position and the morphology state of each conductive channel of the object to be observed.
According to an embodiment of the present application, the scanning module is specifically configured to:
and scanning each pair of the objects to be observed once, stripping a dielectric layer of each layer of the object to be observed until all dielectric layers of the object to be observed are stripped, and obtaining current distribution two-dimensional slice data sets of the object to be observed at different depths.
According to an embodiment of the present application, the object to be observed is a resistance random access memory, and before scanning the object to be observed, the method further includes:
and controlling the resistive random access memory to be in a first state or a second state, wherein the first state is an on-state, and the second state is an off-state.
According to an embodiment of the present application, before scanning the object to be observed, the scanning module is specifically configured to:
determining the formation type of the conductive channel of the object to be observed;
and if the type of the conductive channel is formed by oxygen vacancies, controlling the object to be observed to be in a target observation environment.
According to an embodiment of the present application, the target observation environment is at least one of a vacuum observation environment, a nitrogen observation environment, and an argon observation environment.
According to the device for observing the distribution and the appearance of the multiple conductive channels of the resistive random access memory, the two-dimensional slice data sets of the current distribution at different depths of an object to be observed are obtained by scanning the object to be observed, the three-dimensional reconstruction of the geometric model is carried out to obtain the three-dimensional graph of the current distribution, and the gray value and/or the transparency of the three-dimensional graph are/is adjusted, so that the quantity, the distribution position and the appearance state of each conductive channel of the object to be observed are obtained. Therefore, the problems that the specific distribution position, the number and the shape state of various dielectric layer conductive channels in the related technology are difficult to observe are solved, and the like, and the three-dimensional graph is reconstructed by using the cAFM through a layer-by-layer peeling method, so that the number, the distribution position and the three-dimensional shape of various conductive channels in the dielectric layer are observed.
An embodiment of a third aspect of the present application provides an electronic device, including: the processor executes the program to realize the method for observing the distribution and the morphology of the plurality of conductive channels of the resistive random access memory according to the embodiment.
A fourth aspect of the present application provides a computer-readable storage medium, on which a computer program is stored, where the program is executed by a processor, so as to implement the method for observing the distribution and the morphology of multiple conductive channels of a resistive random access memory as described in the foregoing embodiments.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The foregoing and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a flowchart of a method for observing distribution and morphology of a plurality of conductive channels of a resistive random access memory according to an embodiment of the present application;
FIG. 2 is a schematic illustration of a peel-off provided according to an embodiment of the present application;
FIG. 3 is a schematic diagram of three-dimensional reconstruction of gray scale according to an embodiment of the present application;
FIG. 4 is a flow chart of a method provided according to an embodiment of the present application;
fig. 5 is a block diagram of an example of a device for observing distribution and morphology of multiple conductive channels of a resistive random access memory according to an embodiment of the application;
fig. 6 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
Detailed Description
Reference will now be made in detail to the embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present application and should not be construed as limiting the present application.
The method and the device for observing the distribution and the morphology of a plurality of conductive channels of the resistive random access memory according to the embodiment of the application are described below with reference to the accompanying drawings. In the method, a current distribution two-dimensional slice data set at different depths of an object to be observed is obtained by scanning the object to be observed, a three-dimensional reconstruction of a geometric model is carried out to obtain a current distribution three-dimensional graph, and a gray value and/or transparency are/is adjusted to obtain the quantity, the distribution position and the shape state of each conductive channel of the object to be observed. Therefore, the problems that the specific distribution positions, the number and the morphology states of the conductive channels of various dielectric layers in the related technology are difficult to observe are solved, and the three-dimensional graph is reconstructed by using the cAFM through a layer-by-layer peeling method, so that the number, the distribution positions and the three-dimensional morphology of the conductive channels in the dielectric layers are observed.
Before describing the embodiments of the present application, first, a description will be given of an observation instrument and advantages thereof used in observing conductive paths in various dielectric layers according to the embodiments of the present application
According to the embodiment of the application, when the number, the distribution positions and the three-dimensional shapes of the conductive channels of different medium layers are observed, the cAFM can be adopted for observation, and the cAFM is additionally provided with a sensitive ammeter outside a force sensor and a force detector which are carried by a traditional atomic force microscope, so that the cAFM can conduct electricity at the needle point during scanning, and the cAFM can obtain local conductance information which corresponds to the shapes one by one while obtaining the surface information of an object to be detected. Therefore, through the cAFM, when current flows through the conductive probe and flows to the conductive sample, the local electrical property of the medium material can be scanned, and a two-dimensional distribution diagram of the current intensity can be acquired, so that a three-dimensional conductive channel can be reconstructed through the two-dimensional current distribution.
Specifically, fig. 1 is a schematic flow chart of a method for observing distribution and morphology of multiple conductive channels of a resistive random access memory according to an embodiment of the present application.
As shown in fig. 1, the method for observing the distribution and morphology of a plurality of conductive channels of the resistive random access memory comprises the following steps:
in step S101, an object to be observed is scanned, and a current distribution two-dimensional slice data set of the object to be observed at different depths is obtained.
Further, in some embodiments, scanning the object to be observed to obtain current distribution two-dimensional slice data sets of different depths of the object to be observed includes: and scanning each pair of objects to be observed once, stripping a dielectric layer of one layer of the object to be observed until all dielectric layers of the object to be observed are stripped, and obtaining current distribution two-dimensional slice data sets of the object to be observed at different depths.
Particularly, because there is the rubbing action between conventional cAFM needle point and the scanned object, lead to needle point metal level wearing and tearing easily to influence the spatial resolution of needle point, in order to avoid above-mentioned problem, the diamond conductive probe that hardness is great can be selected for use to this application embodiment, with the problem of solving the easy wearing and tearing of surface cAFM needle point.
Further, as shown in fig. 2, when the diamond conductive probe is used for scanning an object to be observed, a certain acting force is added to the probe, so that each pair of objects to be observed is scanned once, a dielectric layer of the object to be observed with a certain thickness can be stripped, and a current distribution two-dimensional slice data set with different depths of the object to be observed can be obtained until all dielectric layers of the object to be observed are stripped, so that the evolution condition of the cross section of a conductive channel in the dielectric layer is obtained.
Further, in some embodiments, before scanning the object to be observed, the method further includes: determining the forming type of a conductive channel of an object to be observed; and if the type of the conductive channel is formed by oxygen vacancies, controlling the object to be observed to be in the target observation environment.
It should be understood that conductive channels of different media may have different observation environment requirements, and therefore, the embodiment of the present application needs to determine the formation type of the conductive channel of the object to be observed before scanning the object to be observed.
Alternatively, if the conductive channel forming type is a conductive channel formed by oxygen vacancies, the oxygen vacancies can be reduced when contacting with oxygen, and the conductive channel is damaged, so that the object to be observed is controlled to be in the target observation environment. Wherein the target observation environment is at least one of vacuum observation environment, nitrogen observation environment, argon observation environment and the like which can not damage the oxygen vacancy conduction channel. That is, when the conductive channel is formed by oxygen vacancy, in order to avoid that oxygen is reduced due to oxygen vacancy contact, and thus the conductive channel is damaged, when scanning and peeling an object to be observed through the diamond conductive probe, the scanning and peeling of the object to be observed need to be performed in an observation environment such as a vacuum environment, a nitrogen environment or an argon environment, in which the conductive channel is not damaged.
In step S102, a three-dimensional reconstruction of the geometric model is performed on the current distribution two-dimensional slice data sets at different depths, so as to obtain a three-dimensional map of current distribution.
In step S103, the gray value and/or the transparency of the three-dimensional graph of the current distribution are adjusted to obtain the number, the distribution position, and the morphology state of each conductive channel of the object to be observed.
Specifically, as shown in fig. 3, according to the obtained two-dimensional slice data set of current distribution at different depths, firstly, three-dimensional reconstruction can be performed on the slice data by using relevant software such as three-dimensional visualization software Avizo, so as to obtain a three-dimensional graph of current distribution, wherein the three-dimensional graph can include a color graph, a gray graph and the like, the color graph can be used for observing the morphology of the conductive channels, and the gray graph can be used for observing the number, distribution positions and three-dimensional morphology of the conductive channels; and secondly, adjusting the gray value and/or the transparency of the three-dimensional graph of the current distribution, so that the number, the distribution position and the morphology state of each conductive channel of the object to be observed can be clearly observed.
Further, in some embodiments, the object to be observed is a resistance change memory, and before scanning the object to be observed, the method further includes: and controlling the resistive random access memory to be in a first state or a second state, wherein the first state is an on-state, and the second state is an off-state.
It should be understood that the resistive random access memory has two states, an on state and an off state, and in order to observe the number, the distribution positions and the three-dimensional shapes of the conductive channels in the dielectric layer in different states of the resistive random access memory, the embodiment of the present application can operate the RRAM device in different states (on or off), that is, if the number, the distribution positions and the three-dimensional shapes of the conductive channels in the dielectric layer when the resistive random access memory is in the on state are to be observed, the embodiment of the present application can control the resistive random access memory to be in the on state before scanning the resistive random access memory; if the quantity, the distribution position and the three-dimensional appearance of each conductive channel in the dielectric layer are observed when the resistive random access memory is in an off state, the resistive random access memory can be controlled to be in the off state before the resistive random access memory is scanned, and therefore the connection state of the conductive channels when the device is in the 'on' state, the fracture position and the fracture degree of the conductive channels when the device is in the 'off' state, the strength and the weakness of the conductive channels in different states and the like can be clearly observed.
Further, in order to make the more clear understanding of the specific flow of the method for observing the distribution and the morphology of the plurality of conductive channels of the resistive random access memory according to the embodiment of the present application, the following detailed description is made with reference to fig. 4.
Firstly, by adopting the resistive random access memory, different voltages are applied to the metal oxide when an object to be observed is scanned, so that two states of the resistive random access memory are obtained.
And secondly, obtaining a current distribution two-dimensional slice data set of the medium layer at different depths by utilizing the characteristic that the cAFM can represent the current distribution on the surface of the sample and adopting a layer-by-layer peeling method.
And finally, performing three-dimensional reconstruction on the current distribution two-dimensional slice data set by using related software to finally obtain a three-dimensional image of current distribution, and adjusting the gray value and the transparency of the three-dimensional image to obtain the number and the distribution position of the conductive channels and the three-dimensional appearance of each conductive channel.
In the method used in the examples of the present application, any composition of the dielectric layer can be used as long as the conductivity differs from that of the surrounding medium, and the conductivity can be detected by this method. That is, the method can observe not only a plurality of conductive channels formed by metal ions, oxygen vacancies or other methods in the RRAM, but also the distribution of defects (such as oxygen vacancies) in other metal oxides (such as MOSFET, high-k dielectric, etc.), thereby accurately observing the number, distribution positions and three-dimensional morphology of various conductive channels in the dielectric layer.
According to the method for observing the distribution and the appearance of the multiple conductive channels of the resistive random access memory, the object to be observed is scanned to obtain the current distribution two-dimensional slice data sets at different depths of the object to be observed, the three-dimensional reconstruction of the geometric model is carried out to obtain the current distribution three-dimensional graph, and the gray value and/or the transparency of the current distribution three-dimensional graph are/is adjusted, so that the number, the distribution position and the appearance state of the conductive channels of the object to be observed are obtained. Therefore, the problems that the specific distribution position, the number and the shape state of various dielectric layer conductive channels in the related technology are difficult to observe are solved, and the like, and the three-dimensional graph is reconstructed by using the cAFM through a layer-by-layer peeling method, so that the number, the distribution position and the three-dimensional shape of various conductive channels in the dielectric layer are observed.
Next, a device for observing distribution and morphology of a plurality of conductive channels of a resistive random access memory according to an embodiment of the present application is described with reference to the drawings.
Fig. 5 is a schematic block diagram of an apparatus for observing distribution and morphology of multiple conductive channels of a resistive random access memory according to an embodiment of the present application.
As shown in fig. 5, the apparatus 10 for observing distribution and morphology of multiple conductive channels of a resistive random access memory includes: a scanning module 100, a reconstruction module 200, and an adjustment module 300.
The scanning module 100 is configured to scan an object to be observed to obtain current distribution two-dimensional slice data sets of different depths of the object to be observed;
the reconstruction module 200 is configured to perform three-dimensional reconstruction of a geometric model on the current distribution two-dimensional slice data sets at different depths to obtain a three-dimensional map of current distribution; and
the adjusting module 300 is configured to adjust a gray value and/or transparency of the three-dimensional graph of the current distribution to obtain the number, distribution position, and morphology state of each conductive channel of the object to be observed.
Further, in some embodiments, the scanning module 100 is specifically configured to:
and scanning each pair of objects to be observed once, stripping a dielectric layer of one layer of the object to be observed until all dielectric layers of the object to be observed are stripped, and obtaining current distribution two-dimensional slice data sets of different depths of the object to be observed.
Further, in some embodiments, the object to be observed is a resistance change memory, and before scanning the object to be observed, the method further includes:
and controlling the resistive random access memory to be in a first state or a second state, wherein the first state is an on-state, and the second state is an off-state.
Further, in some embodiments, before scanning the object to be observed, the scanning module 100 is specifically configured to:
determining the formation type of a conductive channel of an object to be observed;
and if the type of the conductive channel is formed by oxygen vacancies, controlling the object to be observed to be in the target observation environment.
Further, in some embodiments, the target observation environment is at least one of a vacuum observation environment, a nitrogen observation environment, and an argon observation environment.
According to the device for observing the distribution and the appearance of the multiple conductive channels of the resistive random access memory, the two-dimensional slice data sets of the current distribution at different depths of an object to be observed are obtained by scanning the object to be observed, the three-dimensional reconstruction of the geometric model is carried out to obtain the three-dimensional graph of the current distribution, and the gray value and/or the transparency of the three-dimensional graph are/is adjusted, so that the quantity, the distribution position and the appearance state of each conductive channel of the object to be observed are obtained. Therefore, the problems that the specific distribution positions, the number and the morphology states of the conductive channels of various dielectric layers in the related technology are difficult to observe are solved, and the three-dimensional graph is reconstructed by using the cAFM through a layer-by-layer peeling method, so that the number, the distribution positions and the three-dimensional morphology of the conductive channels in the dielectric layers are observed.
Fig. 6 is a schematic structural diagram of an electronic device according to an embodiment of the present application. The electronic device may include:
a memory 601, a processor 602, and a computer program stored on the memory 601 and executable on the processor 602.
The processor 602 executes the program to implement the method for observing the distribution and the morphology of the plurality of conductive channels of the resistive random access memory provided in the above embodiments.
Further, the electronic device further includes:
a communication interface 603 for communication between the memory 601 and the processor 602.
The memory 601 is used for storing computer programs that can be run on the processor 602.
If the memory 601, the processor 602 and the communication interface 603 are implemented independently, the communication interface 603, the memory 601 and the processor 602 may be connected to each other through a bus and perform communication with each other. The bus may be an Industry Standard Architecture (ISA) bus, a Peripheral Component Interconnect (PCI) bus, an Extended ISA (EISA) bus, or the like. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of illustration, only one thick line is shown in FIG. 6, but this is not intended to represent only one bus or type of bus.
Optionally, in a specific implementation, if the memory 601, the processor 602, and the communication interface 603 are integrated into a chip, the memory 601, the processor 602, and the communication interface 603 may complete mutual communication through an internal interface.
The embodiment of the application also provides a computer-readable storage medium, on which a computer program is stored, and when the program is executed by a processor, the method for observing the distribution and the morphology of the plurality of conductive channels of the resistive random access memory is implemented.
In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or N embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present application, "N" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more N executable instructions for implementing steps of a custom logic function or process, and alternate implementations are included within the scope of the preferred embodiment of the present application in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of implementing the embodiments of the present application.
The logic and/or steps represented in the flowcharts or otherwise described herein, e.g., an ordered listing of executable instructions that can be considered to implement logical functions, can be embodied in any computer-readable medium for use by or in connection with an instruction execution system, apparatus, or device, such as a computer-based system, processor-containing system, or other system that can fetch the instructions from the instruction execution system, apparatus, or device and execute the instructions. For the purposes of this description, a "computer-readable medium" can be any means that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium would include the following: an electrical connection (electronic device) having one or N wires, a portable computer diskette (magnetic device), a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium could even be paper or another suitable medium upon which the program is printed, as the program can be electronically captured, via for instance optical scanning of the paper or other medium, then compiled, interpreted or otherwise processed in a suitable manner if necessary, and then stored in a computer memory.
It should be understood that portions of the present application may be implemented in hardware, software, firmware, or a combination thereof. In the above embodiments, the N steps or methods may be implemented in software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented in hardware, as in another embodiment, any one or combination of the following techniques, which are known in the art, may be used: a discrete logic circuit having a logic gate circuit for implementing a logic function on a data signal, an application specific integrated circuit having an appropriate combinational logic gate circuit, a Programmable Gate Array (PGA), a Field Programmable Gate Array (FPGA), or the like.
It will be understood by those skilled in the art that all or part of the steps carried by the method for implementing the above embodiments may be implemented by hardware that is related to instructions of a program, and the program may be stored in a computer-readable storage medium, and when executed, the program includes one or a combination of the steps of the method embodiments.
In addition, functional units in the embodiments of the present application may be integrated into one processing module, or each unit may exist alone physically, or two or more units are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode. The integrated module, if implemented in the form of a software functional module and sold or used as a separate product, may also be stored in a computer-readable storage medium.
The storage medium mentioned above may be a read-only memory, a magnetic or optical disk, etc. Although embodiments of the present application have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present application, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art within the scope of the present application.
Claims (12)
1. A method for observing distribution and morphology of a plurality of conductive channels of a resistive random access memory is characterized by comprising the following steps:
scanning an object to be observed to obtain a current distribution two-dimensional slice data set of the object to be observed at different depths;
performing three-dimensional reconstruction of a geometric model on the current distribution two-dimensional slice data sets at different depths to obtain a three-dimensional image of current distribution; and
and adjusting the gray value and/or the transparency of the three-dimensional graph of the current distribution to obtain the number, the distribution position and the morphology state of each conductive channel of the object to be observed.
2. The method of claim 1, wherein the scanning of the object to be observed to obtain a current distribution two-dimensional slice data set at different depths of the object to be observed comprises:
and scanning each pair of the objects to be observed once, stripping a dielectric layer of each layer of the object to be observed until all dielectric layers of the object to be observed are stripped, and obtaining current distribution two-dimensional slice data sets of the object to be observed at different depths.
3. The method according to claim 2, wherein the object to be observed is a resistance change memory, and before scanning the object to be observed, the method further comprises:
the resistive random access memory is controlled to be in a first state or a second state, wherein the first state is an on-state, and the second state is an off-state.
4. The method of claim 1, further comprising, prior to scanning the object to be observed:
determining the forming type of the conductive channel of the object to be observed;
and if the type of the conductive channel is formed by oxygen vacancies, controlling the object to be observed to be in a target observation environment.
5. The method of claim 4, wherein the target observation environment is at least one of a vacuum observation environment, a nitrogen observation environment, and an argon observation environment.
6. A device for observing distribution and morphology of a plurality of conductive channels of a resistive random access memory is characterized by comprising:
the scanning module is used for scanning an object to be observed to obtain current distribution two-dimensional slice data sets of the object to be observed at different depths;
the reconstruction module is used for performing three-dimensional reconstruction of a geometric model on the current distribution two-dimensional slice data sets at different depths to obtain a three-dimensional image of current distribution; and
and the adjusting module is used for adjusting the gray value and/or the transparency of the three-dimensional graph of the current distribution to obtain the number, the distribution position and the morphology state of each conductive channel of the object to be observed.
7. The apparatus of claim 6, wherein the scanning module is specifically configured to:
and scanning each pair of the objects to be observed once, stripping a dielectric layer of each layer of the object to be observed until all dielectric layers of the object to be observed are stripped, and obtaining current distribution two-dimensional slice data sets of the object to be observed at different depths.
8. The apparatus according to claim 7, wherein the object to be observed is a resistive random access memory, and before scanning the object to be observed, the apparatus further comprises:
and controlling the resistive random access memory to be in a first state or a second state, wherein the first state is an on-state, and the second state is an off-state.
9. The apparatus according to claim 6, wherein, prior to scanning the object to be observed, the scanning module is specifically configured to:
determining the forming type of the conductive channel of the object to be observed;
and if the type of the conductive channel is formed by oxygen vacancies, controlling the object to be observed to be in a target observation environment.
10. The apparatus of claim 9, wherein the target observation environment is at least one of a vacuum observation environment, a nitrogen observation environment, and an argon observation environment.
11. An electronic device, comprising: the device comprises a memory, a processor and a computer program which is stored in the memory and can run on the processor, wherein the processor executes the program to realize the method for observing the distribution and the morphology of a plurality of conductive channels of the resistive random access memory according to any one of claims 1 to 5.
12. A computer-readable storage medium, on which a computer program is stored, wherein the program is executed by a processor to implement the method for observing the distribution and morphology of multiple conductive channels of a resistive random access memory according to any one of claims 1 to 5.
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| CN103066205A (en) * | 2012-12-21 | 2013-04-24 | 北京大学 | Resistive random access memory preparation method |
| US9324942B1 (en) * | 2013-01-31 | 2016-04-26 | Crossbar, Inc. | Resistive memory cell with solid state diode |
| CN108807666A (en) * | 2018-05-15 | 2018-11-13 | 深圳大学 | A kind of research method of the mechanism of resistance-variable storing device |
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