CN115167019A - Exposure defect sensing device, display terminal and exposure defect sensing method - Google Patents
Exposure defect sensing device, display terminal and exposure defect sensing method Download PDFInfo
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Abstract
The application relates to an exposure defect sensing device, a display terminal and an exposure defect sensing method, wherein the exposure defect sensing device is applied to a display panel and comprises: the position acquisition module is used for acquiring a plurality of measurement point positions corresponding to the defects in the exposure process; the parameter measuring module is electrically connected with the position acquiring module and is used for measuring the critical parameters corresponding to the measuring points; the comparison module is electrically connected with the parameter measurement module and is used for comparing each critical parameter with a preset critical parameter threshold value respectively to obtain a measurement result corresponding to each measurement point; and the adjusting module is electrically connected with the comparing module and used for adjusting the corresponding measuring point positions according to the measuring result. According to the method and the device, the measuring point positions can be associated with the defects in the exposure process, further the measuring point positions which are possibly defective are sensed in advance, the measuring point positions are automatically adjusted before the related defects are generated, and therefore the risk that the display panels are abnormal in batches is reduced.
Description
Technical Field
The application relates to the technical field of display, in particular to an exposure defect sensing device, a display terminal and an exposure defect sensing method.
Background
With the continuous development of Liquid Crystal Display (LCD) technology, the demand of users for LCD screens is also increasing. For example, as the resolution of the lcd is higher and higher, the number of pixels per unit area is higher and higher, the pixel parameters are smaller and smaller, and the detailed structure of the pixels is beyond the limit of the inspection precision in the early stage of factory design, and the quality inspection needs to be assisted by the measurement data.
In the related art, after a Source/Drain (i.e., source/Drain) metal layer of a liquid crystal display panel is exposed, a thickness difference defect at a channel portion is likely to cause a channel short circuit or an open circuit, thereby causing batch abnormality of the display panel. The above phenomenon cannot be found by current Optical Inspection equipment (AOI). This is because the prior art only relies on the Critical Dimension (CD) measurement after etching to reflect whether there is an abnormality in the actual process, but the measurement of the critical dimension is limited by the limitation of the light detection device, and only a sampling test can be performed, and the measurement points are very limited, and often cannot effectively intercept the risk of abnormality, so that when the abnormality is found in the final inspection, a large number of abnormal display panels already exist.
Disclosure of Invention
In view of this, the present application provides an exposure defect sensing apparatus, a display terminal, and an exposure defect sensing method, which can associate a measurement point location with a defect in an exposure process, further sense the measurement point location where the defect may occur in advance, and automatically adjust the measurement point location before the generation of the related defect, thereby reducing a risk of batch abnormality of display panels.
According to an aspect of the present application, there is provided an exposure defect sensing apparatus applied to a display panel, the exposure defect sensing apparatus including: the position acquisition module is used for acquiring a plurality of measurement points corresponding to the defects in the exposure process; the parameter measuring module is electrically connected with the position acquiring module and is used for measuring the critical parameters corresponding to the measuring point positions; the comparison module is electrically connected with the parameter measurement module and is used for comparing each critical parameter with a preset critical parameter threshold value respectively to obtain a measurement result corresponding to each measurement point; and the adjusting module is electrically connected with the comparing module and used for adjusting the corresponding measuring point positions according to the measuring result.
Furthermore, the display panel further comprises a plurality of pixel units arranged in an array, wherein a thin film transistor is arranged in each pixel unit, and each thin film transistor comprises a source electrode, a drain electrode and a grid electrode.
Further, the position obtaining module comprises a defect positioning module and a measurement point location determining module, wherein: the defect positioning module is used for identifying and determining a plurality of defect positions in the sample exposure process; and the measurement point location determining module is electrically connected with the defect positioning module and used for determining a plurality of measurement points corresponding to the defects in the exposure process according to the plurality of defect positions.
Further, the critical parameters comprise a first critical parameter and/or a second critical parameter, wherein: the first critical parameter comprises a trace width of the drain adjacent to the source, and the second critical parameter comprises a minimum distance between the source and the drain.
Further, the critical parameter thresholds include a first critical parameter threshold and a second critical parameter threshold, and the comparing module includes: the first comparison module is electrically connected with the parameter measurement module and used for determining short circuit between the source electrode and the drain electrode of the corresponding thin film transistor under the condition that the critical parameter is less than or equal to the first critical threshold value; the second comparison module is electrically connected with the parameter measurement module and used for determining that the source electrode and the drain electrode of the corresponding thin film transistor are disconnected under the condition that the critical parameter is greater than or equal to the second critical threshold value; and the third comparison module is electrically connected with the parameter measurement module and used for determining that the source electrode and the drain electrode of the corresponding thin film transistor are normal under the condition that the critical parameter is greater than the first critical threshold value and less than the second critical threshold value.
Further, the positions of the plurality of measurement points include a GOA region and an active region.
Further, the adjustment module further comprises an early warning module, the early warning module is electrically connected with the comparison module, and the early warning module is used for identifying abnormal measurement points according to measurement results corresponding to the measurement points and sending out early warning information based on the abnormal measurement points.
Further, the adjusting module further comprises an executing module, the executing module is electrically connected with the early warning module, and the executing module is used for compensating the critical parameters corresponding to the abnormal measurement points according to the early warning information so as to make up for the defects in the exposure process.
According to another aspect of the present application, a display terminal is provided, which includes an exposure defect sensing apparatus and a display panel connected to the exposure defect sensing apparatus.
According to another aspect of the present application, there is provided an exposure defect sensing method applied to the exposure defect sensing apparatus, the exposure defect sensing method including: acquiring a plurality of measurement points corresponding to defects in the exposure process; measuring critical parameters corresponding to the measurement points; comparing each critical parameter with a preset critical parameter threshold value respectively to obtain a measurement result corresponding to each measurement point; and adjusting the corresponding measuring point position according to the measuring result.
The method comprises the steps of obtaining a plurality of measurement point positions corresponding to defects in the exposure process, measuring critical parameters corresponding to the measurement point positions, comparing the critical parameters with preset critical parameter thresholds to obtain measurement results corresponding to the measurement point positions, adjusting the corresponding measurement point positions according to the measurement results, associating the measurement point positions with the defects in the exposure process according to the aspects of the application, further sensing the measurement point positions possibly having the defects in advance, and automatically adjusting the measurement point positions before the related defects are generated, so that the risk of batch abnormity of the display panel is reduced.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 shows a schematic diagram of a pixel unit of the related art.
Fig. 2 shows a schematic diagram of a related art source-drain short circuit.
Fig. 3 shows a schematic diagram of measurement points of the related art.
Fig. 4 is a diagram showing measurement results of the related art.
Fig. 5 shows a schematic diagram of measurement points according to an embodiment of the present application.
Fig. 6 shows a schematic diagram of critical parameters of an embodiment of the present application.
Fig. 7 shows a schematic diagram of a GOA region in an embodiment of the present application.
Fig. 8 shows a schematic diagram of a first critical parameter of an embodiment of the present application.
Fig. 9 is a schematic diagram illustrating a first critical threshold and a second critical threshold according to an embodiment of the present application.
Fig. 10 shows schematic diagrams before and after defect compensation of the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first" and "second" may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other suitable relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Further, the present application may repeat reference numerals and/or reference letters in the various examples for simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or arrangements discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials. In some instances, methods, means, elements and circuits that are well known to those skilled in the art have not been described in detail so as not to obscure the present application.
Fig. 1 shows a schematic diagram of a pixel unit of the related art.
As shown in fig. 1, in the related art, the display panel includes a plurality of pixel units arranged in an array, and each pixel unit includes a pixel electrode 11 and a driving device 12. The driving device 12 may be a Thin Film Transistor (TFT). The grid electrode of the thin film transistor in each pixel unit is electrically connected with the corresponding scanning line, the source electrode of the thin film transistor in each pixel unit is electrically connected with the pixel electrode of the pixel unit, and the drain electrode of the thin film transistor in each pixel unit is electrically connected with the corresponding data line. The scanning lines are used for controlling all thin film transistors in a row of pixel units to be turned on, and the data lines are used for transmitting data signals to the pixel electrodes when the corresponding thin film transistors are turned on so as to charge the corresponding pixel units and drive liquid crystals corresponding to the pixel units to work, so that display of a display picture is realized.
Fig. 2 shows a schematic diagram of a related art source-drain short circuit.
As shown in fig. 2, fig. 2 is a partially enlarged view of the driving device 12 in fig. 1. Wherein 21 is a data line corresponding to the pixel unit, and 22 is a connection portion between a source and a drain of the thin film transistor in the pixel unit. In the manufacturing process of the display panel, after the exposure process, the channel of the thin film transistor may have a defect shown as 22 in fig. 2. The defect can be in a horizontal S shape and is respectively electrically connected with the source electrode and the drain electrode of the thin film transistor, so that the source electrode and the drain electrode of the thin film transistor are short-circuited, namely, a channel short-circuit phenomenon is caused.
Fig. 3 shows a schematic diagram of a measurement point location of the related art.
As shown in fig. 3, in the related art, a plurality of display panels with different parameters may form a hybrid (hybrid) architecture display panel. For example, in fig. 3, 0A, 0B, 0C may be a 65-inch-sized display panel, and 0D, 0E, 0F, 0G, 0H, 0I may be a 32-inch-sized display panel. Measurement point 31 is located at the lower left corner of display panel 0A. As can be seen from fig. 3, the measurement points in the related art are distributed at the intersection of the display panels with different parameters, or are regularly distributed along the symmetry axis of the display panel itself.
Fig. 4 is a diagram showing measurement results of the related art.
As shown in fig. 4, the horizontal axis represents the measurement time point, and the vertical axis represents the critical parameter. Each small circle in fig. 4 represents a critical parameter measured at the corresponding measurement time point at the regularly distributed measurement points in fig. 3. 41 may be data of a plurality of measurement points of one display panel, and 42 may be data of one measurement point, that is, one column of data in fig. 4 may correspond to one display panel. In fig. 4, the threshold value of the critical parameter is set to 5.5. When the critical parameter corresponding to the measurement point location is greater than or equal to the threshold value, indicating that the process of the measurement point location is abnormal and needing to be repaired; and under the condition that the critical parameter corresponding to the measurement point is smaller than the threshold value, indicating that the process of the measurement point is abnormal and needing to be repaired. The Critical parameter is a Critical Dimension (CD) of a wafer formed by photolithography, and is a key process parameter in the photolithography process.
As can be seen from fig. 3 and 4, the measurement points in the related art are regularly distributed in the display panel of the hybrid structure, and only existing points that are uniformly distributed can be determined in actual measurement. The related art cannot cover other positions in the display area except the existing measurement point. When the process parameters at the positions are abnormal, the existing set threshold value is failed, and the abnormal point positions are missed.
In view of the above, the present application provides an exposure defect sensing apparatus, which is applied to a display panel, and includes: the position acquisition module is used for acquiring a plurality of measurement points corresponding to the defects in the exposure process; the parameter measuring module is electrically connected with the position acquiring module and is used for measuring the critical parameters corresponding to the measuring point positions; the comparison module is electrically connected with the parameter measurement module and is used for comparing each critical parameter with a preset critical parameter threshold value respectively to obtain a measurement result corresponding to each measurement point; and the adjusting module is electrically connected with the comparing module and used for adjusting the corresponding measuring point positions according to the measuring result.
The method comprises the steps of obtaining a plurality of measurement point positions corresponding to defects in the exposure process, measuring critical parameters corresponding to the measurement point positions, comparing the critical parameters with preset critical parameter thresholds respectively to obtain measurement results corresponding to the measurement point positions, and adjusting the corresponding measurement point positions according to the measurement results.
Furthermore, the display panel further comprises a plurality of pixel units arranged in an array, wherein a thin film transistor is arranged in each pixel unit, and each thin film transistor comprises a source electrode, a drain electrode and a grid electrode. The thin film transistor in the embodiment of the present application may be an N-type or a P-type. The positions of the source and drain electrodes of the thin film transistors may be different for different types of thin film transistors. It is to be understood that the present application is not limited to the type of thin film transistor.
Further, the position obtaining module comprises a defect positioning module and a measurement point location determining module, wherein: the defect positioning module is used for identifying and determining a plurality of defect positions in the sample exposure process; and the measurement point location determining module is electrically connected with the defect positioning module and used for determining a plurality of measurement points corresponding to the defects in the exposure process according to the plurality of defect positions.
Wherein the sample may be a display panel with known defects. For example, a statistical analysis may be performed on the produced sample, and a plurality of defect positions may be identified and determined during the exposure of the sample, and the defect positions with a higher frequency of occurrence may be calibrated. During subsequent measurement, the defect position with higher occurrence frequency can be used as a measurement point for measurement. Of course, the defect location may be different for different types of display panels. For different types of display panels, the measurement points can be set as required.
Because this application embodiment sets up the measuring point position in the position (weak position) that the defect is concentrated easily, compare and set up the measuring point position as evenly distributed in the correlation technique, can carry out perception in advance to the measuring point position that probably takes place the defect to solve the weak position of display panel among the correlation technique and exceed the threshold value easily but can't detect, lead to the unusual problem of display panel batch.
Fig. 5 shows a schematic diagram of measurement points according to an embodiment of the present application.
As shown in fig. 5, the measurement point location 51 of the embodiment of the present application may be disposed near the lower left corner of the display panel 0A, instead of disposing the measurement point locations uniformly as shown in fig. 3. Therefore, the number of the measurement points in the embodiment of the present application can be adjusted as needed. For example, two measurement points may be provided in fig. 5. Of course, when there is a risk of a defect in the measurement point shown in fig. 3, the measurement point of the present application may also be disposed at a boundary of the corresponding display panel as shown in fig. 3.
It should be noted that, in the embodiment of the present application, the weak positions of the display panel may be screened first, the management items may be set individually, independent measurement data may be generated, and the management and the setting of the specification lines may be enhanced by performing individual control. Because the total measuring point positions are few, the whole device can be set to initiate an abnormal alarm when the data of a single measuring point position exceeds a threshold value, so that adjustment and improvement can be immediately started, and the risk of batch abnormal display panels is reduced.
Further, the critical parameters comprise a first critical parameter and/or a second critical parameter, wherein: the first critical parameter comprises a trace width of the drain adjacent to the source, and the second critical parameter comprises a minimum distance between the source and the drain.
Fig. 6 shows a schematic diagram of critical parameters of an embodiment of the present application.
As shown in fig. 6, L3 may be a trace width of a drain of a thin film transistor, i.e. the first critical parameter, and L5 may be a trace width of a source of the thin film transistor. L6 and L7 may be the trace widths of the drain and source of another tft, respectively. The second critical parameter may be a minimum distance between the drain and the adjacent source of one thin film transistor in fig. 6. The active region 61 may be disposed at the upper left corner of fig. 6.
Further, the positions of the plurality of measurement points include a GOA region and an active region.
Fig. 7 shows a schematic diagram of a GOA region in an embodiment of the present application.
As shown in fig. 7, the GOA area of the display panel may include 4U-shaped traces, and the trace 71 is one of the U-shaped traces. In the related art, since the measurement points are uniformly distributed, the measurement points are not set in the GOA region and the active region, but in the present application, the measurement points may be set in the GOA region in fig. 7 and the active region in fig. 6 according to actual needs.
Fig. 8 shows a schematic diagram of a first critical parameter of an embodiment of the present application.
As shown in fig. 8, taking the lower left corner in fig. 5 as the origin of coordinates, X may represent the distance from the current measured point to the origin of coordinates in the horizontal direction, and Y may represent the distance from the current measured point to the origin of coordinates in the vertical direction. Wherein CD3 may be the first critical parameter, i.e. L3 in fig. 6. CD1, CD5, CD6, CD10, and CD16 may represent other parameters in the display panel, and the present application is not limited thereto.
Further, the critical parameter thresholds include a first critical parameter threshold and a second critical parameter threshold, and the comparing module includes: the first comparison module is electrically connected with the parameter measurement module and used for determining short circuit between the source electrode and the drain electrode of the corresponding thin film transistor under the condition that the critical parameter is less than or equal to the first critical threshold value; the second comparison module is electrically connected with the parameter measurement module and used for determining that the source electrode and the drain electrode of the corresponding thin film transistor are disconnected under the condition that the critical parameter is greater than or equal to the second critical threshold value; and the third comparison module is electrically connected with the parameter measurement module and used for determining that the source electrode and the drain electrode of the corresponding thin film transistor are normal under the condition that the critical parameter is greater than the first critical threshold value and less than the second critical threshold value.
Fig. 9 is a schematic diagram illustrating a first critical threshold and a second critical threshold according to an embodiment of the present application.
As shown in fig. 9, the horizontal axis represents the measurement time point, and the vertical axis represents the critical parameter. 91 and 92 represent two different types of display panels, respectively. 93 may be a first critical threshold and 94 may be a second critical threshold. As can be seen from fig. 9, the same first critical threshold value as well as the second critical threshold value may be set for different types of display panels. When the first critical parameter determined corresponding to the measurement point is located between the first critical threshold and the second critical threshold, the positions of the source electrode and the drain electrode of the thin film transistor are moderate, otherwise, the relative positions of the source electrode and the drain electrode of the thin film transistor need to be corrected, so that short circuit and open circuit of the source electrode and the drain electrode after the implementation of the subsequent process are avoided, and the batch abnormity of the display panel is caused.
Further, the adjustment module further comprises an early warning module, the early warning module is electrically connected with the comparison module, and the early warning module is used for identifying abnormal measurement points according to measurement results corresponding to the measurement points and sending out early warning information based on the abnormal measurement points. Therefore, the risk area can be independently monitored in a high-risk area through the characteristics of the product, the risk area pertinence determination and automatic early warning function are achieved after the etching process, and the batch accident risk is greatly reduced.
Further, the adjusting module further comprises an executing module, the executing module is electrically connected with the early warning module, and the executing module is used for compensating the critical parameters corresponding to the abnormal measurement points according to the early warning information so as to make up for the defects in the exposure process.
Fig. 10 shows schematic diagrams before and after defect compensation of the embodiment of the present application.
As shown in fig. 10, in the case where defect compensation is not performed in advance, a slight deformation occurs at L19 in fig. 10. After the offset data is corrected in advance by the exposure machine, no distortion occurs at L19 in fig. 10, and the image is in a normal state. Therefore, after the adjustment is carried out by the adjusting module, the channel short-circuit accident can be effectively controlled and improved before occurring.
The existing production equipment machine is used for a long time, so that the problems of aging, gradual deterioration of flatness and the like exist. In addition, due to the limitation of measurement time and determination point positions for product quality control, the liquid crystal display panel cannot be comprehensively managed, and potential hazards of multiple quality accidents exist. Therefore, according to the method, the weak positions of the products which are easy to cause abnormity in the exposure process are obtained firstly, the measurement point positions of the corresponding positions are added to the products after etching, the measurement results of a small number of point positions are supervised for a long time, management items are distinguished independently, reasonable specification lines are set, automatic monitoring is achieved, the products are sensed and debugged before deterioration, and batch quality abnormity is avoided.
In addition, this application provides a display terminal, display terminal includes exposure defect perception device and display panel, display panel with exposure defect perception device is connected. The display panel provided by the embodiment of the application can be used in the fields of wearable devices, such as smart bracelets, smart watches, VR (Virtual Reality) and other devices, mobile phones, electronic books, electronic newspaper televisions, personal portable computers, foldable and rollable OLED (organic light emitting diode) and other flexible OLED displays, illumination and the like. It is to be understood that the application is not limited to the specific application scenario of the display panel.
The application also provides an exposure defect sensing method, which is applied to the exposure defect sensing device and comprises the following steps: acquiring a plurality of measurement points corresponding to defects in the exposure process; measuring critical parameters corresponding to the measurement points; comparing each critical parameter with a preset critical parameter threshold value respectively to obtain a measurement result corresponding to each measurement point; and adjusting the corresponding measuring point position according to the measuring result.
It should be noted that the above steps are exemplary. In practical applications, the adopted process may be adjusted as needed to implement the exposure defect sensing method, and the specific process of the display panel is not limited in the present application. For details of the exposure defect sensing method, reference may be made to the above description of the embodiment of the exposure defect sensing apparatus, and details are not repeated.
In summary, in the embodiment of the present application, a plurality of measurement point locations corresponding to defects in an exposure process are obtained, then critical parameters corresponding to the measurement point locations are measured, then the critical parameters are respectively compared with a preset critical parameter threshold to obtain measurement results corresponding to the measurement point locations, and finally the corresponding measurement point locations are adjusted according to the measurement results, so that the measurement point locations can be associated with the defects in the exposure process, and further the measurement point locations which may have the defects are sensed in advance, and the measurement point locations are automatically adjusted before the generation of the related defects, thereby reducing the risk of batch anomalies of the display panel.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to the related descriptions of other embodiments.
The exposure defect sensing device, the display terminal and the exposure defect sensing method provided by the embodiment of the application are described in detail, a specific example is applied in the description to explain the principle and the implementation mode of the application, and the description of the embodiment is only used for helping to understand the technical scheme and the core idea of the application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. An exposure defect sensing apparatus, applied to a display panel, comprising:
the position acquisition module is used for acquiring a plurality of measurement points corresponding to the defects in the exposure process;
the parameter measuring module is electrically connected with the position acquiring module and is used for measuring the critical parameters corresponding to the measuring point positions;
the comparison module is electrically connected with the parameter measurement module and is used for comparing each critical parameter with a preset critical parameter threshold value respectively to obtain a measurement result corresponding to each measurement point;
and the adjusting module is electrically connected with the comparing module and used for adjusting the corresponding measuring point positions according to the measuring result.
2. The apparatus according to claim 1, wherein the display panel further comprises a plurality of pixel units arranged in an array, each pixel unit having a thin film transistor disposed therein, the thin film transistor comprising a source, a drain and a gate.
3. The exposure defect sensing apparatus of claim 1, wherein the position obtaining module comprises a defect positioning module and a measurement point location determining module, wherein:
the defect positioning module is used for identifying and determining a plurality of defect positions in the sample exposure process;
and the measurement point location determining module is electrically connected with the defect positioning module and used for determining a plurality of measurement points corresponding to the defects in the exposure process according to the plurality of defect positions.
4. The exposure defect sensing apparatus of claim 2, wherein the critical parameters comprise a first critical parameter and/or a second critical parameter, wherein: the first critical parameter comprises a trace width of the drain adjacent to the source, and the second critical parameter comprises a minimum distance between the source and the drain.
5. The exposure defect sensing apparatus of claim 2, wherein the critical parameter threshold comprises a first critical parameter threshold and a second critical parameter threshold, and the comparing module comprises:
the first comparison module is electrically connected with the parameter measurement module and used for determining short circuit between the source electrode and the drain electrode of the corresponding thin film transistor under the condition that the critical parameter is less than or equal to the first critical threshold value;
the second comparison module is electrically connected with the parameter measurement module and used for determining that the source electrode and the drain electrode of the corresponding thin film transistor are disconnected under the condition that the critical parameter is greater than or equal to the second critical threshold value;
and the third comparison module is electrically connected with the parameter measurement module and used for determining that the source electrode and the drain electrode of the corresponding thin film transistor are normal under the condition that the critical parameter is greater than the first critical threshold value and less than the second critical threshold value.
6. The exposure defect sensing apparatus of claim 2, wherein the positions of the plurality of measurement points comprise a GOA region and an active region.
7. The exposure defect sensing device according to claim 1, wherein the adjusting module further comprises an early warning module, the early warning module is electrically connected to the comparing module, and the early warning module is configured to identify an abnormal measurement point location according to a measurement result corresponding to each measurement point location, and send out early warning information based on the abnormal measurement point location.
8. The exposure defect sensing device of claim 1, wherein the adjusting module further comprises an executing module, the executing module is electrically connected to the early warning module, and the executing module is configured to compensate for critical parameters corresponding to abnormal measurement points according to the early warning information, so as to compensate for defects in the exposure process.
9. A display terminal, characterized in that the display terminal comprises the exposure defect sensing apparatus according to any one of claims 1 to 8 and a display panel connected to the exposure defect sensing apparatus.
10. An exposure defect sensing method applied to the exposure defect sensing apparatus according to any one of claims 1 to 8, the exposure defect sensing method comprising:
acquiring a plurality of measurement points corresponding to defects in the exposure process;
measuring critical parameters corresponding to the measurement points;
comparing each critical parameter with a preset critical parameter threshold value respectively to obtain a measurement result corresponding to each measurement point;
and adjusting the corresponding measuring point position according to the measuring result.
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