CN115166487A - Reliability verification device and method for temperature sensor chip - Google Patents
Reliability verification device and method for temperature sensor chip Download PDFInfo
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Abstract
The invention provides a device and a method for verifying the reliability of a temperature sensor chip, which comprises a temperature conversion module, a voltage impact module, a high-low voltage control system and a high-low temperature control system; the high-low temperature control system controls the ambient temperature of the temperature sensor chip; the temperature conversion module performs analog-to-digital conversion when the temperature sensor chip reads the temperature; the high-low voltage control system controls the environmental voltage of the temperature sensor chip; and the voltage impact module performs voltage impact on the temperature sensor chip. Compared with the Weibull distribution, the model of the invention can more accurately and scientifically evaluate the reliability of the high-precision temperature sensor chip. Compared with the traditional HTOL experiment, the high-low temperature static discharge working life experiment (HLTESDOL) designed by the verification scheme has the advantages of low requirement on the number of sample particles, greatly shortened experiment time and high accuracy.
Description
Technical Field
The invention relates to the technical field of chip design, in particular to a device and a method for verifying the reliability of a temperature sensor chip. In particular, it preferably relates to a reliability designing and verifying apparatus of a high-precision temperature sensor chip.
Background
The Reliability (Reliability) of a chip is the life of a chip product to a certain extent, and good quality and durability are often competitive power of an excellent product. When product verification is carried out, three problems are usually encountered, namely what is verified, how to verify and where to verify, the three problems are solved, the quality and the reliability are ensured, a manufacturer can put a large number of products to the market, and a customer can use the products with confidence. Reliability is a measure of the durability of a product and answers the question of how long, in short, a product life cycle can be used. The quality is solved by the problems at the present stage and the reliability is solved for a period of time later. The lifetime of most semiconductor devices can exceed many years under normal use. But we cannot wait several years before studying the device; we must increase the applied stress. The applied stress may enhance or accelerate the underlying failure mechanism, help find the root cause, and help us take steps to prevent failure modes. Therefore, reliability design and verification is a very important ring in chip development.
The high-precision temperature sensor chip belongs to a new product in the market, a clear reliability verification scheme is lacked for the product in the industry at present, and the high-precision temperature sensor chip is difficult to evaluate due to small size, ultra-low power consumption and high sensitivity to the environment. According to JEDEC STANDARD, the mainstream method at present estimates the lifetime of the chip by using an HTOL (High Temperature Operating Life) experiment, so as to evaluate the reliability of the chip. However, the requirement of the traditional HTOL experimental sample is 3 batches (77 pcs per batch), and the requirement on the number is higher; the experiment time is required to be 1000h, the time span is long, and the consumption of resources is large. Pcs is called pieces in English, and Chinese translation is a plurality of numbers, numbers and stations.
The Chinese invention patent document with the publication number of CN105004981A discloses an accelerated estimation method of the service life of an LED chip, which comprises the steps of selecting two samples, measuring initial reverse currents under two different reverse voltages before aging, accelerating luminous flux attenuation at high temperature to carry out aging test, measuring the reverse currents under two different reverse voltages after aging and estimating the service life by a formula, so that the reverse currents of the samples before and after the light attenuation are measured by applying the two different reverse voltages, and the service life of the LED chip can be accelerated and estimated by the calculation formula.
For the above related technologies, the inventor considers that the conventional HTOL experimental sample has high requirement on the number of particles, long experimental time, low accuracy and poor reliability.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a device and a method for verifying the reliability of a temperature sensor chip.
The reliability verification device of the temperature sensor chip comprises a temperature conversion module, a voltage impact module, a high-low voltage control system and a high-low temperature control system;
the high-low temperature control system controls the ambient temperature of the temperature sensor chip;
the temperature conversion module performs analog-to-digital conversion when the temperature sensor chip reads the temperature;
the high-low voltage control system controls the environmental voltage of the temperature sensor chip;
and the voltage impact module performs voltage impact on the temperature sensor chip.
Preferably, the temperature conversion module is connected with the aging circuit board;
the temperature sensor chip carries out printed circuit board surface mounting operation through a surface mounting technology;
the aging circuit board is connected with the printed circuit board;
the voltage surge module comprises a static discharge voltage surge module, and the static discharge voltage surge module is connected with the printed circuit board.
According to the reliability verification method of the temperature sensor chip provided by the invention, the reliability verification device of the temperature sensor chip is applied, and the reliability verification method comprises the following steps:
the improvement experiment steps are as follows: verifying the temperature sensor chip through a high-low temperature static discharge working life experiment to obtain the number of samples to be tested which pass the verification;
and a failure rate calculation step: calculating the failure rate of the temperature sensor chip by combining the number of the samples to be detected which pass the verification with an acceleration reliability model;
an evaluation step: and verifying the reliability of the temperature sensor chip through the failure rate.
Preferably, the step of improving the experiment comprises the following steps:
testing parameters before experiment: preparing samples to be tested in a designated batch, and testing key parameters of the temperature sensor chip before the experiment;
the experimental steps are as follows: alternately carrying out a high-temperature low-pressure experiment at a first preset time and a low-temperature high-pressure experiment at a second preset time on the environment where the sample to be detected is located;
carrying out analog-to-digital conversion when the temperature sensor chip reads the temperature by sending continuous pulses, and carrying out voltage impact on the temperature sensor chip after the analog-to-digital conversion;
and (3) testing parameters after test: testing key parameters of the temperature sensor chip after the experiment;
a sample quantity obtaining step: and comparing the test results of the key parameters before and after the experiment to obtain the number ss of the samples to be tested which pass the verification.
Preferably, the modified assay step further comprises a patch step: before verification, printed circuit board surface mounting operation is carried out on the temperature sensor chip through a surface mounting technology, and a sample to be detected is obtained.
Preferably, the step of improving the experiment further comprises repeating the experiment steps: the cycle of experimental steps was repeated.
Preferably, in the sample quantity obtaining step, if the test of the sample to be tested fails or the front and back drift amounts exceed a predetermined percentage, the verification is determined to fail, otherwise, the verification passes.
Preferably, in the step of improving the experiment, the key parameter includes a temperature accuracy T of the temperature sensor chip AC Converting the current I CON Switching time T CON Standby current I STB Register value and leakage current LKG.
Preferably, the verification method further comprises the step of establishing an acceleration reliability model:
the arrhenius formula accelerates the reaction model as follows:
wherein, AF T Representing Arrheniy Wu SiwenA degree of acceleration factor; e a Represents activation energy; k represents a boltzmann constant; t is a unit of u Represents the temperature under daily use conditions; t is a Represents the temperature under accelerated conditions;
establishing an acceleration reliability model:
wherein x is 2 Representing chi-square test; alpha represents a chi-square equation confidence interval; d.F represents a degree of freedom; a (T) a ) Represents a temperature-dependent acceleration factor; b (V) cc ) Represents a voltage-dependent acceleration factor; c (f) T ) Represents an acceleration factor related to the analog-to-digital conversion frequency at the reading temperature; d (f) V ) Representing an acceleration factor related to the voltage surge frequency; ss represents the number of samples; FIT is equivalent to the unit of measure of failure rate, and in complex form is FTIs.
Preferably, in the experimental procedure, the elevated temperature comprises 100 ℃, 125 ℃ or 150 ℃, the reduced pressure comprises 1.5V, 2.0V or 2.5V, the reduced temperature comprises-75 ℃, 50 ℃ or-25 ℃, and the elevated pressure comprises 5.0V, 5.5V or 6.0V.
Compared with the prior art, the invention has the following beneficial effects:
1. compared with the Weibull distribution, the model of the invention can more accurately and scientifically evaluate the reliability of the high-precision temperature sensor chip.
2. Compared with the traditional HTOL experiment, the verification scheme of the invention is designed into an improved high-low temperature static discharge working life experiment (HLTESDOL), and has the advantages of low requirement on the number of sample particles, greatly shortened experiment time and high accuracy;
3. the analog-to-digital conversion and high-voltage impact device for reading temperature at high frequency can also greatly improve the experiment acceleration efficiency.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a flow chart of a method for verifying reliability in accordance with the present invention;
FIG. 2 is a block diagram of an apparatus for verifying reliability according to the present invention;
FIG. 3 is a graph of temperature drift resulting from a conventional HTOL 1000h experiment;
FIG. 4 is a graph of the temperature shift resulting from the HLTESDOL 96h experiment of the present invention.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will aid those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any manner. It should be noted that it would be obvious to those skilled in the art that various changes and modifications can be made without departing from the spirit of the invention. All falling within the scope of the present invention.
The embodiment of the invention discloses a reliability verification method for a temperature sensor chip, a bathtub curve is generally used as a visual model to illustrate three key periods of product failure rate, but enough short-term and long-term fault information cannot be obtained generally to accurately model a large number of products by using a calibrated bathtub curve, so that the reliability modeling is generally used for estimation. There are three main stages of semiconductor product life. Early failure rate: this stage is characterized by a high initial failure rate and a rapid reduction in the later stages. Normal life cycle: the failure rate at this stage remains stable throughout the useful life of the device. This failure rate is expressed in units of "FIT". And (3) a degradation stage: this stage represents the point in time when the intrinsic degradation mechanism begins to dominate and the failure rate begins to increase in geometric steps. Product life is generally defined as the period of time from initial production until degradation occurs.
For a given sample size n, m faults will occur after t hours of operation, if n has been operating for t hours before the number of faults m is recorded, the failure rate λ:
the failure rate λ is a basic definition, and refers to a probability that a certain amount of samples fail after a certain time in a real situation, and in practical applications, particularly in a case where the sample size is large, calculation is difficult to achieve.
Time base failure FIT (number of failed devices per 10 hundred million hours of operation):
wherein, t 1 Indicating a first time to failure; t is t 2 Indicating a second failure time; t is t 3 Represents the third failure time; t is t m Indicating the m-th failure time. The mean time to failure MTTF is a basic definition here, and the chip lifetime can be roughly estimated in a weibull distribution.
The embodiment of the invention discloses a reliability verification method of a temperature sensor chip, which is different from the embodiment I in that Weibull Distribution (Weibull Distribution) is obtained according to a weakest link model or a series model and can be suitable for a Distribution form of wear accumulated failure of electronic products. The method can easily deduce distribution parameters according to failure probability density, and is widely applied to data processing of various life tests. The Weibull distribution has greater applicability than the lognormal distribution.
The failure probability density function f (t) of the Weibull distribution is:
wherein β represents a shape parameter of the distribution; η represents a size parameter of the distribution; e denotes a natural constant.
The corresponding cumulative failure distribution function F (t) is:
in this failure distribution mode, the failure rates λ and MTTF of the components can be expressed as:
wherein d represents a differential; r (t) is one of representation methods of Weibull distribution, R (t) =1-F (t); a common unit for failure rate λ is FIT (10) -9 H). The failure rate λ here is an estimated failure rate in combination with the weibull distribution.
The third embodiment of the invention discloses a reliability design and verification device of a high-precision temperature sensor chip, which comprises a temperature conversion module, a voltage impact module (an ESD high-voltage impact module), a high-low voltage control system and a high-low temperature control system, as shown in figures 1 and 2. "high accuracy" means temperature accuracy within + -0.1 deg.C.
And the high-precision temperature sensor chip carries out printed circuit board surface mounting operation through a surface mounting technology.
The high-low temperature control system controls the temperature of the sample accelerated experiment. Namely, the high-low temperature control system controls the ambient temperature of the temperature sensor chip.
The temperature conversion module is connected with a Burn-in board (aging circuit board) and performs analog-to-digital conversion when the temperature sensor chip reads the temperature.
The temperature conversion module is connected with the Burn-in board, the Burn-in board is connected with the printed circuit board, the voltage impact module comprises an electrostatic discharge voltage impact module, and the electrostatic discharge voltage impact module is connected with the printed circuit board.
The input and output Pin (IO Pin) of Burn-inBoard is connected with the first input and output Pin of printed circuit board, and the temperature conversion module is connected with all Pin pins to make it power up (including VCC Pin and GND Pin), is equivalent to letting the chip normally work. And a second input/output pin of the printed circuit board is connected to the ESD high-voltage impact module. The high-voltage impact module injects ESD voltage into the input and output pins to discharge power supplies VCC Pin and GND Pin.
High-low pressure control system: the voltage of the sample acceleration experiment was controlled. The high-low voltage control system controls the environment voltage of the temperature sensor chip.
ESD high-voltage impact module: the samples were subjected to high voltage shock similar to the ESD experiments. The voltage surge module (electrostatic discharge voltage surge module) performs voltage surge on the temperature sensor chip.
The third embodiment of the invention also discloses a reliability verification method of the temperature sensor chip, which applies a reliability verification device of the temperature sensor chip and comprises the following steps:
establishing an acceleration reliability model: because of the different mechanisms that cause integrated circuit failure, there are correspondingly different MTTF and failure rate data. The mechanism in which the MTTF is the shortest is the most likely to cause failure.
The Arrhenius equation (Arrhenius equation) model for accelerated reaction is as follows:
wherein, AF T Represents an arrhenius temperature acceleration factor; e a Represents activation energy; k represents a boltzmann constant; t is u Represents the temperature under daily use conditions; t is a Indicating the temperature under accelerated conditions.
Aiming at the reliability of the high-precision temperature sensor chip, an acceleration reliability Model (SARM Model, sensorinegacuted reliability Model, shen Xiling acceleration reliability Model) is established:
wherein x is 2 RepresentChecking a chi square; alpha represents a chi-square equation confidence interval; d.F represents a degree of freedom; a (T) a ) Represents a temperature-dependent acceleration factor; b (V) cc ) Representing a voltage-dependent acceleration factor; c (f) T ) Representing an acceleration factor related to the analog-to-digital conversion frequency at which the temperature is read; d (f) V ) Represents an acceleration factor related to a voltage surge frequency (high voltage surge frequency); ss represents the number of samples; FIT is equivalent to the unit of measure of failure rate; FIT corresponds to the unit of measure and is customarily used in plural forms of FTIs. The failure rate λ is a value obtained by simulation by establishing an SARM model, and can be used for calculating the working life of the chip.
The principle of combining a high-precision temperature sensor chip is used for a scene, wherein an acceleration factor A is related to the temperature of an acceleration experiment, an acceleration factor B is related to the voltage of the acceleration experiment, an acceleration factor C is related to the temperature conversion frequency of the acceleration experiment, and an acceleration factor D is related to the high-voltage impact frequency of the acceleration experiment. The failure rate lambda can be used for calculating the service life of the chip, and the method is higher in accuracy compared with Weibull distribution and more suitable for high-precision temperature sensor chips.
The improvement experiment steps are as follows: and verifying the temperature sensor chip through a high-low temperature static discharge working life experiment to obtain the number of the verified samples to be detected.
Specifically, the reliability verification scheme of the improved high-low temperature static discharge working life experiment is designed by utilizing the model, and the analog-to-digital conversion of the chip during temperature reading is carried out at short intervals in the process by alternately carrying out a high-temperature (100 ℃/125 ℃/150 ℃) low-pressure (1.5V/2.0V/2.5V) experiment and a low-temperature (-75 ℃/50 ℃/25 ℃) high-pressure (5.0V/5.5V/6.0V) experiment. And after conversion, high voltage impact similar to an ESD experiment is carried out on the chip, so that the aging of the chip is further accelerated. ESD is called Electro-Static discharge in English, and Chinese translation is electrostatic discharge.
As shown in table 1, the temperature drift of the temperature sensor chip can often represent the aging degree of the chip, and through data verification on the model, the temperature drift caused by one cycle of the high-temperature low-voltage 48h and the low-temperature high-voltage 48h, namely the hltespol 96h experiment, is equivalent to the temperature drift caused by the conventional HTOL 1000h experiment (as shown in fig. 3 and 4), so that the acceleration efficiency of the life experiment is greatly improved.
TABLE 1 temperature Drift Table for HLTESDOL 96h experiment and HTOL 1000h experiment
| 0h | HTOL-1000h | 0h | HLTESDOL-96h |
| 0.03125 | 0.082187 | -0.01563 | 0.067812 |
| 0.015625 | 0.050937 | 0 | 0.067812 |
| 0.023438 | 0.066562 | -0.05469 | 0.013125 |
| 0 | 0.05875 | -0.03125 | 0.044375 |
| 0 | 0.066562 | -0.00781 | 0.052187 |
| 0.007813 | 0.05875 | 0.007813 | 0.052187 |
| -0.01563 | 0.0275 | -0.01563 | 0.044375 |
| -0.03125 | 0.050937 | -0.02344 | 0.02875 |
| 0 | 0.082187 | 0 | 0.052187 |
| -0.01563 | 0.066562 | -0.0625 | 0.013125 |
The improved experiment steps comprise the following steps:
a paster pasting step: before verification, printed circuit board surface mounting operation is carried out on the temperature sensor chip through a surface mounting technology, and a sample to be detected is obtained.
Specifically, before verification, the chip needs to be subjected to PCB (printed circuit board) mounting operation through SMT (surface mount technology), so that the real application scene of the chip can be simulated, and the stability is improved. The Burnin Board is connected behind the patch, and the working circuit can be communicated after the patch is powered on. It should be noted that SMT uses materials with higher glass transition temperatures. SMT is called Surface Mounted Technology in English, and Chinese translation is Surface mount Technology. The PCB is called Printed Circuit Board in English, and the Chinese translation is Printed Circuit Board.
Testing parameters before experiment: preparing samples to be tested in a designated batch, and testing key parameters of the temperature sensor chip before the experiment. The key parameter includes the temperature accuracy T of the temperature sensor chip AC Switching the current I CON Switching time T CON Standby current I STB OTP register value and leakage current LKG.
Specifically, three batches (10 pcs each) of samples were prepared and tested for temperature accuracy T of the chip prior to the experiment AC Converting the current I CON Switching time T CON Standby current I STB And key parameters (function test and ATE test are combined) such as OTP register value, leakage current LKG and the like. ATE is called Automatic Test Equipment in English, and Chinese translation is Automatic Test Equipment. OTP English is called One Time Programmable, and Chinese translation is One-Time Programmable.
The experimental steps are as follows: and alternately carrying out a high-temperature low-pressure experiment in a first preset time and a low-temperature high-pressure experiment in a second preset time on the environment where the sample to be detected is located. The high temperature includes 100 deg.C, 125 deg.C or 150 deg.C, the low pressure includes 1.5V, 2.0V or 2.5V, the low temperature includes-75 deg.C, -50 deg.C or-25 deg.C, and the high pressure includes 5.0V, 5.5V or 6.0V. The temperature sensor chip is subjected to analog-to-digital conversion when the temperature is read by sending continuous pulses, and voltage impact is carried out on the temperature sensor chip after the analog-to-digital conversion.
Specifically, high-temperature (100 ℃/125 ℃/150 ℃) low-voltage (1.5V/2.0V/2.5V) experiments are alternately carried out for 24h, low-temperature (-75 ℃/50 ℃/25 ℃) high-voltage (5.0V/5.5V/6.0V) experiments are carried out for 24h, continuous pulses are sent through a special Burn-in Board (aging circuit board) in the experiment process to carry out analog-to-digital conversion (interval of 10ms/15ms/20ms/25 ms) when the chip reads the temperature at high frequency (frequently), and high-voltage impact similar to ESD experiments is carried out on the chip after conversion. The voltage of the high-voltage impact is the limit voltage which can be borne by the temperature sensor chip. Before verification, the voltage of the temperature sensor chip is tested, and the limit voltage of the temperature sensor chip is tested. The limiting voltages of different temperature sensor chips are different in size. The high temperature and low voltage are firstly carried out, the temperature and voltage values are not fixed, and the selection is carried out according to the values in brackets and the requirements of different products. Let the chip experiment, the special Burn-in Board's particularity lies in: besides the simulation of chip load work, the analog-to-digital conversion and high-voltage impact can be carried out by matching with a device when the temperature is read.
The experimental procedure was repeated: the cycle of experimental steps was repeated. Specifically, the high-low temperature experiment is repeated for one cycle; two cycles of 96h correspond to 1000 hours for a conventional HTOL experiment.
And (3) testing parameters after test: and testing key parameters of the temperature sensor chip after the experiment. Specifically, the temperature accuracy T of the chip after the test AC Converting the current I CON Switching time T CON Standby current I STB Key parameters such as OTP register value and leakage current LKG.
A sample quantity acquisition step: and comparing the test results of the key parameters before and after the experiment, if the test of the sample to be tested fails or the front and back drift amounts exceed a preset percentage, judging that the verification fails, otherwise, passing the verification. And obtaining the number ss of the samples to be detected which pass the verification.
Specifically, the test results of parameters before and after the experiment are compared, and if the test fails or the pre-drift and post-drift amounts exceed a certain percentage (set to be 10%, 20% and 30% according to the required height), the verification Fail is determined, otherwise, the Pass is verified. Fail is indicated by Fail and Pass is indicated by Pass. Fail then means that the sample validation fails, and the failure rate lambda is calculated only after the Pass is judged.
And a failure rate calculation step: and calculating the failure rate of the temperature sensor chip by combining the number of the samples to be detected which pass the verification with an SARM reliability model.
Specifically, the above results are combined with the SARM reliability Model (sensory attached reliability Model):
calculating the failure rate lambda of the chip, estimating the service life MTTF of the chip:
wherein f (λ) represents a positive correlation of λ, and MTTF is a negative correlation with λ. Thereby evaluating the reliability of the high-precision temperature sensor chip.
An evaluation step: and verifying the reliability of the temperature sensor chip through the failure rate. Specifically, according to the failure rate lambda and the service life MTTF, the normal working time of the chip can be estimated, and therefore reliability is evaluated. After the service life of the chip is calculated, a normal working time (namely, the normal use is ensured not to be invalid for a certain time) can be provided for a user, and different standards are provided according to different application scenes generally. The failure rate and the MPPT are in negative correlation, the smaller the failure rate is, the longer the estimated service life is, and the better the reliability of the verification of the temperature sensor chip is.
The invention provides a reliability design and verification device for a high-precision temperature sensor chip. The design comprises the following steps: through reliability modeling, a SARM Model (Sensylink accessed reliability Model) is obtained. Compared with the Weibull distribution, the model can more accurately and scientifically evaluate the reliability of the high-precision temperature sensor chip. Compared with the traditional HTOL experiment, the high-low temperature static discharge working life experiment (HLTESDOL) designed by the verification scheme has the advantages of low requirement on the number of sample particles, greatly shortened experiment time and high accuracy. The analog-to-digital conversion and the high-voltage impact device during high-frequency temperature reading can also greatly improve the experiment acceleration efficiency.
Aiming at a high-precision temperature sensor chip, an SARM model is established to evaluate the reliability of the high-precision temperature sensor chip; designing an improved high-low temperature static discharge working life experiment (HLTESDOL) to verify the reliability of the chip; the experiment was accelerated using analog-to-digital conversion at high frequency reading temperature and a high voltage shock device.
The SARM model acceleration factor comprises the relation among the temperature, the voltage, the analog-to-digital conversion frequency when reading the temperature and the high-voltage impact frequency of the acceleration experiment. And introducing an acceleration factor, and calculating the failure rate lambda by using an SARM model so as to convert the working life of the chip.
The reliability verification scheme of the improved high-low temperature static discharge working life experiment is carried out by alternately cycling a high-temperature (100 ℃/125 ℃/150 ℃) low-pressure (1.5V/2.0V/2.5V) experiment and a low-temperature (-75 ℃/50 ℃/25 ℃) high-pressure (5.0V/5.5V/6.0V) experiment. The reliability verification scheme of the high-low temperature static discharge working life experiment is improved, and the chip is subjected to analog-to-digital conversion during high-frequency temperature reading in the experiment process. According to the reliability verification scheme of the improved high-low temperature static discharge working life experiment, high-voltage impact similar to an ESD (electro-static discharge) experiment can be performed on a chip after analog-to-digital conversion during each temperature reading in the experiment process.
The reliability verification scheme of the improved high-low temperature static discharge working life experiment needs to test the temperature precision T of the chip before the experiment AC Converting the current I CON Switching time T CON Standby current I STB And testing and comparing the key parameters such as the OTP register value and the leakage current LKG (LKG leakage current), analyzing (combining the functional test and the ATE test), judging to verify Fail once the test fails or the front and back drift amount exceeds a certain percentage, and otherwise verifying Pass.
The verification device accelerates the experiment by sending continuous pulses through a special Burn-in Board to perform analog-to-digital conversion (interval of 10ms/15ms/20ms/25 ms) when the chip reads the temperature at a high frequency. The verification device can perform high-voltage impact (interval of 10ms/15ms/20ms/25 ms) on the chip after analog-to-digital conversion at each temperature reading to accelerate the experiment.
Those skilled in the art will appreciate that, in addition to implementing the system and its various devices, modules, units provided by the present invention as pure computer readable program code, the system and its various devices, modules, units provided by the present invention can be fully implemented by logically programming method steps in the form of logic gates, switches, application specific integrated circuits, programmable logic controllers, embedded microcontrollers and the like. Therefore, the system and various devices, modules and units thereof provided by the invention can be regarded as a hardware component, and the devices, modules and units included in the system for realizing various functions can also be regarded as structures in the hardware component; means, modules, units for performing the various functions may also be regarded as structures within both software modules and hardware components for performing the method.
The foregoing description has described specific embodiments of the present invention. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (10)
1. The reliability verification device of the temperature sensor chip is characterized by comprising a temperature conversion module, a voltage impact module, a high-low voltage control system and a high-low temperature control system;
the high-low temperature control system controls the ambient temperature of the temperature sensor chip;
the temperature conversion module performs analog-to-digital conversion when the temperature sensor chip reads the temperature;
the high-low voltage control system controls the environmental voltage of the temperature sensor chip;
and the voltage impact module performs voltage impact on the temperature sensor chip.
2. The device for verifying reliability of a temperature sensor according to claim 1, wherein the temperature conversion module is connected to a burn-in circuit board;
the temperature sensor chip carries out printed circuit board surface mounting operation through a surface mounting technology;
the aging circuit board is connected with the printed circuit board;
the voltage surge module comprises a static discharge voltage surge module, and the static discharge voltage surge module is connected with the printed circuit board.
3. A method for verifying the reliability of a temperature sensor chip, wherein the device for verifying the reliability of a temperature sensor chip according to any one of claims 1 or 2 is applied, and comprises the steps of:
the improvement experiment steps are as follows: verifying the temperature sensor chip through a high-low temperature static discharge working life experiment to obtain the number of samples to be tested which pass the verification;
and a failure rate calculation step: calculating the failure rate of the temperature sensor chip by combining the number of the samples to be detected which pass the verification with an acceleration reliability model;
an evaluation step: and verifying the reliability of the temperature sensor chip through the failure rate.
4. The method of claim 3, wherein the step of improving the experiment comprises the steps of:
testing parameters before experiment: preparing samples to be tested in a designated batch, and testing key parameters of the temperature sensor chip before the experiment;
the experimental steps are as follows: alternately carrying out a high-temperature low-pressure experiment at a first preset time and a low-temperature high-pressure experiment at a second preset time on the environment where the sample to be detected is located;
carrying out analog-to-digital conversion when the temperature sensor chip reads the temperature by sending continuous pulses, and carrying out voltage impact on the temperature sensor chip after the analog-to-digital conversion;
and (3) testing parameters after the test: testing key parameters of the temperature sensor chip after the experiment;
a sample quantity acquisition step: and comparing the test results of the key parameters before and after the experiment to obtain the number ss of the samples to be tested which pass the verification.
5. The method of claim 3, wherein the improved experiment step further comprises a patch step: before verification, printed circuit board surface mounting operation is carried out on the temperature sensor chip through the surface mounting technology, and a sample to be detected is obtained.
6. The method of claim 4, wherein the step of refining the experiment further comprises repeating the step of: the cycle of experimental steps was repeated.
7. The method for verifying the reliability of the temperature sensor chip as claimed in claim 4, wherein in the step of obtaining the number of samples, if the test failure of the sample to be tested occurs or the amount of forward and backward drift exceeds a predetermined percentage, the verification is determined to be failed, otherwise, the verification is passed.
8. The method for verifying the reliability of a temperature sensor chip according to claim 4, wherein in the step of improving the experiment, the key parameter includes a temperature accuracy T of the temperature sensor chip AC Converting the current I CON Switching time T CON Standby current I STB Register value and leakage current LKG.
9. The method of claim 3, further comprising the step of establishing an accelerated reliability model:
the arrhenius formula accelerated reaction model is as follows:
wherein, AF T Representing an arrhenius temperature acceleration factor; e a Represents activation energy; k represents a boltzmann constant; t is a unit of u Represents the temperature under daily use conditions; t is a Represents the temperature under accelerated conditions;
establishing an acceleration reliability model:
wherein x is 2 Representing chi-square test; alpha represents a chi-square equation confidence interval; d.F represents a degree of freedom; a (T) a ) Represents a temperature-dependent acceleration factor; b (V) cc ) Representing a voltage-dependent acceleration factor; c (f) T ) Representing an acceleration factor related to the analog-to-digital conversion frequency at which the temperature is read; d (f) V ) Representing an acceleration factor related to the voltage surge frequency; ss represents the number of samples; FIT is equivalent to the unit of measure of failure rate, and is in complex form FTIs.
10. The method of claim 4, wherein in the step of testing, the high temperature includes 100 ℃, 125 ℃ or 150 ℃, the low pressure includes 1.5V, 2.0V or 2.5V, the low temperature includes-75 ℃, 50 ℃ or-25 ℃, and the high pressure includes 5.0V, 5.5V or 6.0V.
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