CN115166457A - Nondestructive testing method for temperature distribution uniformity of multiple chips in SiC MOSFET module - Google Patents

Nondestructive testing method for temperature distribution uniformity of multiple chips in SiC MOSFET module Download PDF

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CN115166457A
CN115166457A CN202210693852.8A CN202210693852A CN115166457A CN 115166457 A CN115166457 A CN 115166457A CN 202210693852 A CN202210693852 A CN 202210693852A CN 115166457 A CN115166457 A CN 115166457A
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temperature
module
current
difference value
large current
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郭春生
李宇濛
赵迪
丁珏文
崔绍雄
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Beijing University of Technology
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Beijing University of Technology
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention discloses a nondestructive testing method for multi-chip temperature distribution uniformity in a SiCMOS module, which comprises the steps of applying a high grid voltage on a grid electrode of the SiCMOS module, working on a blind area, respectively applying a small current and a long pulse width large current to obtain a temperature sensitive parameter of the small current and a temperature sensitive parameter of the large current containing self-heating; reversely pushing back a temperature sensitive parameter of a large current containing self-heating to obtain a temperature calibration curve without self-heating, and establishing a calibration Wen Quxian library by combining the temperature calibration curve of a small current; testing two temperature values of the module after temperature rise under low current and long pulse width high current based on a Wen Quxian calibration library, and calculating the difference value of the temperature results of the two temperature values; and comparing the temperature difference value with a reference temperature difference value, so that the temperature distribution condition in the module can be judged under the condition of not damaging the module package. The invention avoids the problems that under the actual working condition, the temperature distribution of multiple chips in the module is not uniform, the temperature difference is large, and the reliability of individual chips is obviously reduced.

Description

Nondestructive testing method for temperature distribution uniformity of multiple chips in SiC MOSFET module
Technical Field
The invention relates to a temperature test method for a SiC MOSFET module chip, in particular to a nondestructive test method for the temperature distribution uniformity of multiple chips in a SiC MOSFET module, belonging to the field of electronic device test.
Background
SiC materials are widely used in semiconductor devices due to their good electrical and thermal properties, wherein SiC MOSFET modules are expected to replace Si-based IGBT modules in the future due to their superior performance in high frequency and high power fields. Similar to Si-based IGBTs, siC MOSFET power devices are often used in parallel in a modular fashion for the purpose of increasing current capacity and power expansion. The problem of thermal reliability becomes particularly important as the size continues to shrink, inevitably increasing the power density inside the module.
Due to the continuous increase of the chip integration scale and the influence of factors such as production difference and heat dissipation, the problem of uneven temperature distribution inside the module is difficult to avoid. According to the Arrhenius model, the reliability of the chip with high temperature is low, so that the overall reliability of the module is challenged, and the reliable operation of the module in practical application is seriously influenced. Therefore, before the SiC MOSFET is put into use formally, the overall reliability of the module needs to be evaluated, so that the product is screened again, the reliability of the module in the operation of the whole equipment is further improved, and the evaluation has important significance.
For the packaged SiC MOSFET module, the temperature distribution is difficult to detect on the premise of not damaging the package. For the problem, manufacturers mostly adopt a sampling detection method, that is, several SiC MOSFET modules are randomly extracted in the same batch to open the package, and an infrared camera or other methods are used to check the internal temperature distribution. Firstly, the method can damage the encapsulation of the module, change the heat dissipation condition inside the module, and have difference with the actual working condition. Secondly, the sampling detection belongs to destructive tests, the SiC MOSFET module is expensive, and the sampling detection can bring no small economic burden to manufacturers. Finally, sampling detection is only probability detection, and the condition that the temperature distribution of the whole batch of modules is uniform cannot be guaranteed to be within an acceptable range.
In addition, the problem of large-current temperature measurement of the SiC MOSFET module still has a bottleneck, and the accuracy of a test result is difficult to ensure. On one hand, a current source depended by the short-pulse large-current temperature measurement method does not meet the experimental requirements yet, and the current can not be quickly raised in a very short time. On the other hand, the large current with long pulse width inevitably leads to self-heating of the module, and has great influence on the accuracy of the test result.
In order to solve the problems, the invention provides a detection method which is simple, low in cost and capable of reducing economic loss, and the method can detect the temperature distribution uniformity of the whole batch of SiC MOSFET modules, realize re-screening and further improve the reliability of the whole batch of SiC MOSFET modules.
Disclosure of Invention
The invention provides a detection method aiming at the problem of uneven temperature distribution inside a SiC MOSFET module. And (3) performing reverse pushing by using the temperature sensitive parameters of large current and self-heating to obtain a temperature calibration curve without self-heating, and establishing a temperature calibration curve library by combining the temperature calibration curve under small current. The reference temperature difference is set by a user or a manufacturer by performing measurement in advance. Firstly, a small current is introduced to make the module work in a variable resistance region, and the steady-state conduction voltage drop V of the module is measured ds Obtaining a test result T under a small current 1 . And then the module works in a rated current region by using the long pulse width and the large current to obtain the temperature sensitive electrical parameters (such as but not limited to steady-state conduction voltage drop V) under the corresponding current ds ) And (5) changing the process. Obtaining corresponding temperature change through a calibration Wen Quxian library, selecting a proper moment, and obtaining a test result T under a large current 2 . And performing difference processing on the two temperature results to finally obtain a temperature difference value delta T, and comparing the temperature difference value delta T with a reference temperature difference value to provide a detection standard for the distribution uniformity of the temperature in the screening module.
The principle is as follows:
the on-resistance of a SiC MOSFET can be roughly divided into two major parts, channel resistance and drift region resistance, and sometimes can be subdivided into JFET region resistance, which is considered once as the same part because the JFET region resistance and drift region resistance have similar properties. The threshold voltage of the SiC MOSFET decreases with an increase in temperature, so that the channel resistance decreases with an increase in temperature, having a negative temperature characteristic. Meanwhile, phonon scattering is aggravated due to the increase of the temperature, the mobility is reduced, and the resistance of a drift region and the resistance of a JFET region are increased, so that the JFET has positive temperature characteristics. When a high gate voltage is applied to the gate of the SiC MOSFET, the channel is completely formed, the channel resistance is reduced, the drift region resistance occupies most of the on-resistance, and the on-resistance is mainly determined by the drift region resistance and has a positive temperature characteristic.
According to the characteristics, the on-resistance of the SiC MOSFET has a positive temperature characteristic under the high gate voltage, and when the temperature distribution among the plurality of chips in the module is uneven, the on-resistance of a high-temperature area is larger, the current sharing characteristic appears, and the integral temperature of the module is raised. When the temperature distribution inside the module is very uneven, the current sharing characteristic is limited, and the possibility of early failure of part of the chips exists.
Under the working conditions of high grid voltage and high current, the main factor causing the change of the temperature-sensitive parameter along with the increase of the time for applying the high current is self-temperature rise, and at the moment, the temperature-sensitive parameter without the self-temperature rise can be obtained by reversely pushing the temperature-sensitive parameter with the self-temperature rise, so that a temperature correction curve is obtained. After the heating under the simulation actual working condition of applying the large current, the temperature change of the process can be obtained by collecting temperature-sensitive parameters in the process of applying the test current, and the temperature result which is not heated by self is obtained at a proper moment. Under the working conditions of high grid voltage and low current, the applied power is low, so that obvious self-heating cannot be caused, reverse pushing processing on temperature sensitive parameters is not needed, and the test result at the moment can be directly obtained.
In addition, under different test currents, the chip current occupation ratio inside the chip current occupation ratio changes due to the characteristic difference of the chip current occupation ratio, so that the test results are different. Therefore, the temperature result difference value delta T of different testing currents is utilized, and the condition of the distribution uniformity of the temperature inside the nondestructive testing module is achieved.
And performing reverse pushing by using the temperature sensitive parameter with self-heating to obtain a temperature sensitive parameter without self-heating, obtaining a temperature correction curve without self-heating under a large current, and establishing a temperature correction curve library by combining the temperature correction curve under a small current. A reference temperature difference value which is in line with expectation is set through measurement in advance, the reference difference value is utilized to detect the temperature difference value of the SiC MOSFET module under the actual working condition at different test currents, and the temperature difference value is compared with the reference temperature difference value, so that the module with poor temperature distribution uniformity in the module is screened out.
A nondestructive testing method for the temperature distribution uniformity of multiple chips in a SiC MOSFET module takes the parallel connection of multiple chips of SiC MOSFETs as an example. Examples include SiC MOSFET modules, parametric testers, heated platforms (such as but not limited to incubators), high power current sources. The parametric tester is used for a given SiC MOSFET module gate voltage and different test currents, and collects corresponding temperature sensitive parameters (such as, but not limited to, V) at different test currents ds ). The heating platform is an incubator (but not limited to an incubator) for raising the temperature of the module, and a temperature correction curve library is established by simulating the conditions at different temperatures. The high-power current source is used for applying large current to the drain electrode, so that the temperature of the module is raised, and the actual working condition is simulated.
Taking the SiC MOSFET module as an example to test the uniformity of the temperature distribution in the module, the method also comprises the following steps:
the method comprises the following steps: placing the SiC MOSFET module in an incubator, applying high gate voltage on a gate by using a parameter tester to completely form a channel of the SiC MOSFET module, and setting different incubator temperatures. A small current is introduced into the drain electrode to enable the drain electrode to work in a variable resistance region, and the source-drain voltage V of the measurement module at different temperatures ds Obtaining a small current calibration Wen Quxian; then, a large current with long pulse width is introduced into the drain electrode, so that the module stably works in a rated current region, and the drain-source voltage V in the process of applying the large current is collected ds And obtaining the temperature sensitive parameter of the large current containing self-heating.
Step two: and reversely pushing the temperature sensitive parameters containing the self-heating to obtain a large-current temperature correction curve without self-heating, and establishing a temperature correction curve library by combining the small-current temperature correction curve obtained in the last step.
Step three: the SiC MOSFET module is removed from the incubator, the gate, source, drain are connected to a parametric tester device, and the source and drain are connected to a high power current source. The parameter tester gives the high grid voltage of the module to completely form a channel of the module, and applies large current through a high-power current source to simulate the actual working condition of the module.
Step four: after heating for a period of time, the current source is turned off. Keeping the high grid voltage applied by the parameter tester unchanged, and respectively introducing small currents I which are the same as those in the Wen Quxian calibration library 1 And a long pulse width of large current I 2 And collecting V at low current ds And V of large current long pulse width process ds Comparing with Wen Quxian library to obtain the measured temperature T under small current 1 And the measured temperature T of large current 2 The real-time change of the temperature T is obtained by selecting a proper moment and measuring the temperature T with large current 2 And performing difference processing on the two temperature results, and calculating to obtain a temperature difference value delta T.
Step five: and comparing the temperature difference value delta T with the reference temperature difference value, and if the temperature difference value delta T is higher than the reference difference value, determining that the temperature distribution in the SiC MOSFET module is not uniform, and if the temperature distribution exceeds the reference uniformity standard, part of chips in the module face the problem of low reliability.
The beneficial effect of this patent is:
first, the patent reduces the economic loss due to sampling detection. Secondly, the patent uses an electrical method to measure temperature sensitive electrical parameters (such as steady state conduction voltage drop V) ds But not limited to, such) are not destructive testing methods. Thirdly, this patent is through carrying out the backstepping to the temperature sensitive parameter under the heavy current, has avoided the error of introducing from the temperature rise. Finally, the problem of grid instability which often occurs in the SiC MOSFET is solved, the test is always carried out under the same high grid voltage, and grid voltage switching is not carried out.
Drawings
Fig. 1 SiC MOSFET module test circuit.
FIG. 2 SiC MOSFET temperature sensitive parameter (V) ds ) Change over time.
Fig. 3 SiC MOSFET device electrothermal characteristics.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
A nondestructive testing method for the temperature distribution uniformity of multiple chips in a SiC MOSFET module takes the parallel connection of multiple chips of SiC MOSFET as an example. Examples include SiC MOSFET modules, parametric testers, heated platforms (such as but not limited to incubators), high power current sources. The parametric tester is used for a given SiC MOSFET module gate voltage and different test currents, and collects corresponding temperature sensitive parameters (such as, but not limited to, V) at different test currents ds ). The heating platform is an incubator (but not limited to an incubator) for raising the temperature of the module, and a temperature correction curve library is established by simulating the conditions at different temperatures. The high-power current source is used for applying large current to the drain electrode, so that the temperature of the module is raised, and the actual working condition is simulated.
And performing reverse pushing by using the temperature sensitive parameter with self-heating to obtain a temperature sensitive parameter without self-heating, obtaining a temperature correction curve without self-heating under a large current, and establishing a temperature correction curve library by combining the temperature correction curve under a small current. A reference temperature difference value which is in line with expectation is set through measurement in advance, the temperature difference value of the SiC MOSFET module under the actual working condition at different test currents is detected by utilizing the reference difference value, and the temperature difference value is compared with the reference temperature difference value, so that the module with poor temperature distribution uniformity inside the module is screened out.
FIG. 1 is a schematic diagram of a test circuit of a SiC MOSFET module, in which a parameter tester provides gate voltage to a gate of the SiC MOSFET module, applies different test currents to a drain, and collects source-drain voltage V ds The current source is used for applying large current, simulating actual working conditions and realizing internal heating of the module to be tested.
FIG. 2 shows the temperature-sensitive parameter (V) of a SiC MOSFET after a long pulse of high current is applied ds ) Change over time. As the application time of the drain large current increases, the drain-source voltage rises like a linear due to the self-heating effect. By reversely pushing back the temperature sensitive parameter, the drain-source voltage without self-heating can be obtained.
Fig. 3 shows the electrothermal characteristic of the SiC MOSFET device, and the present patent utilizes the high gate voltage characteristic of the SiC MOSFET device, and under the same drain-source voltage and at different temperatures, the current is different, and at this time, the on-resistance has the positive temperature characteristic and the soaking characteristic.

Claims (2)

1. A nondestructive testing method for multi-chip temperature distribution uniformity in a SiCMOS module is characterized by comprising the following steps: the method comprises the following steps of,
the method comprises the following steps: placing the SiCMOS module in an incubator, applying high gate voltage on a gate by using a parameter tester to completely form a channel of the SiCMOS module, and setting different incubator temperatures; a small current is introduced into the drain electrode to enable the drain electrode to work in a variable resistance region, and the source-drain voltage V of the measurement module at different temperatures ds Obtaining a small current correction Wen Quxian; then, a large current with a long pulse width is introduced into the drain electrode, so that the module stably works in a rated current area, and the drain-source voltage V in the process of applying the large current is collected ds Obtaining temperature sensitive parameters of the large current containing self-heating;
step two: reversely and reversely pushing temperature sensitive parameters containing self-heating to obtain a large-current temperature correction curve without self-heating, and establishing a Wen Quxian calibration library by combining the small-current temperature correction curve obtained in the previous step; the temperature calibration curve library comprises a large-current temperature calibration curve and a small-current temperature calibration curve Wen Quxian;
step three: taking the SiCMOS module out of the incubator, connecting a grid electrode, a source electrode and a drain electrode to parameter tester equipment, and connecting the source electrode and the drain electrode to a high-power current source; the parameter tester gives a module high grid voltage to completely form a channel of the module, and applies a large current through a high-power current source to simulate the actual working condition of the module;
step four: after heating for a period of time, turning off the current source; keeping the high grid voltage applied by the parameter tester unchanged, and respectively introducing small currents I which are the same as those in the Wen Quxian calibration library 1 And a long pulse width of large current I 2 And collecting V at low current ds And V of large current long pulse width process ds Comparing with Wen Quxian library to obtain the measured temperature T under small current 1 And the measured temperature T of large current 2 The real-time change of the temperature T is obtained by selecting a proper moment and measuring the temperature T with large current 2 Performing difference processing on the two temperature results, and calculating to obtain a temperature difference value delta T;
step five: comparing the temperature difference value delta T with the reference temperature difference value, and if the temperature difference value delta T is higher than the reference temperature difference value, determining that the temperature distribution in the SiCMOS module is not uniform; beyond the reference uniformity standard, some chips inside the SiCMOSFET module will suffer from low reliability.
2. The method of claim 1, wherein the method further comprises the step of performing a non-destructive test of the multi-chip temperature distribution uniformity inside the SiCSMOSFET module by combining a large current calibration Wen Quxian obtained by reverse backward pushing under the condition of non-uniform temperature distribution and different test results of different test currents.
CN202210693852.8A 2022-06-19 2022-06-19 Nondestructive testing method for temperature distribution uniformity of multiple chips in SiC MOSFET module Pending CN115166457A (en)

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