CN115166363A - Resistance measuring method - Google Patents
Resistance measuring method Download PDFInfo
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- CN115166363A CN115166363A CN202210744393.1A CN202210744393A CN115166363A CN 115166363 A CN115166363 A CN 115166363A CN 202210744393 A CN202210744393 A CN 202210744393A CN 115166363 A CN115166363 A CN 115166363A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
Abstract
The invention provides a resistance measuring method, which comprises the steps of firstly applying a first current from a first detection point to a second detection point to a resistance to be detected, and acquiring a corresponding first voltage value by using a first test port and a second test port of a detection device; then, applying a second current from a second detection point to a first detection point to the resistor to be detected, and acquiring a corresponding second voltage value by using a first test port and a second test port of the detection device, wherein the first current and the second current have the same current value; and finally, obtaining the average value of the resistance in the first detection process and the second detection process according to the first current, the first voltage value, the second current and the second voltage value so as to obtain the resistance value of the resistance to be detected. By using the resistance measuring method provided by the invention, the instrument differential pressure generated in the detection equipment can be mutually offset in the calculation process, so that the influence of the instrument differential pressure on the measurement result is reduced, and the measurement accuracy is greatly and effectively improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a resistance measuring method.
Background
The precise control and evaluation of the production and manufacturing of the wafer runs through the entire process manufacturing process of the wafer production, thereby verifying whether the wafer product meets the product specification. To achieve this, in addition to accurately monitoring the critical dimension or the thickness of the deposited film in each step of the production process, the wafer needs to be tested before shipment, and the electrical parameters (such as resistance, capacitance, etc.) of the specific test structure are measured to ensure that the electrical parameters of the critical devices of the chip meet the electrical design rules.
However, as the technology develops, the integration degree of the chip becomes higher and higher, and the devices on the wafer are made smaller and smaller. As a result, the on-resistance of the device is becoming smaller and smaller, and milliohm-scale products are common. When measuring the on-resistance, if the conventional method is used to measure (i.e. applying a large current to the resistor to be measured and measuring a voltage, then calculating by ohm's law), the final test value will be the superposition of the on-resistance and the resistance of the connecting wire. Because the resistance value of the on-resistance is very small, the resistance of the connecting wire cannot be completely ignored, so that the test value of the on-resistance is large, and finally, the accuracy and the reliability of the test are seriously influenced. In order to measure the tiny electrical resistance accurately, in the existing process, the kelvin method is usually adopted to measure the conducting resistance, so that the influence of miscellaneous items such as the resistance of a connecting wire is effectively removed, and the test result is more accurate.
However, in the actual mass production process of a wafer fab, a plurality of inspection apparatuses of different models are often used to perform batch tests on wafers of the same batch at the same time. Although the influence of parasitic resistance such as a connection wire in the device is eliminated as much as possible by the kelvin wiring method. However, because the accuracy of the instrument hardware in the detection devices of different models is different, when different automatic test devices are used for measuring the same on-resistance to be measured on the same wafer, the current excitation applied to the resistance to be measured and the measured voltage have a certain slight difference. However, for a resistance in the milliohm range, the slight instrument voltage difference causes the measured resistance values to be different, and the accuracy of the measurement is seriously affected. As shown in fig. 1, a comparison graph of measured resistance values of two different types of detection devices for a plurality of resistors to be measured on the same wafer shows that the difference between the two sets of measured values is large, and some of the measured values even exceed 30%.
Disclosure of Invention
The invention aims to provide a resistance measuring method to solve the problem that in the prior art, in the process of measuring resistance, especially for resistance of milliohm level, the measurement result is greatly influenced by instrument differential pressure in detection equipment, and the measurement accuracy is seriously influenced.
In order to solve the above technical problem, the present invention provides a method for measuring a resistance, including:
providing a resistor to be detected, wherein the resistor to be detected is provided with a first detection point and a second detection point which are opposite;
performing a first detection process with a detection device, comprising: applying a first current from a first detection point to a second detection point to a resistor to be detected, and acquiring a corresponding first voltage value by using a first test port and a second test port of the detection equipment;
performing a second detection process with the detection device, comprising: applying a second current from a second detection point to a first detection point to the resistor to be detected, and acquiring a corresponding second voltage value by using a first test port and a second test port of the detection equipment, wherein the first current and the second current have the same current value; and the number of the first and second groups,
and obtaining the average value of the resistance in the first detection process and the second detection process according to the first current, the first voltage value, the second current and the second voltage value so as to obtain the resistance value of the resistance to be detected.
Optionally, the detection apparatus further includes a third test port and a fourth test port, where the third test port and the fourth test port are used to form a current excitation loop to apply a current to the resistor to be tested.
Optionally, the third test port is a current source, and the fourth test port is a ground terminal; when a first detection process is executed, the third test port is connected with the first detection point, and the fourth test port is connected with the second detection point; when the second detection process is executed, the fourth test port is connected with the first detection point, and the third test port is connected with the second detection point.
Optionally, the first test port, the second test port, the third test port, and the fourth test port are all probes.
Optionally, when the detection is not started, the potentials of the first test port and the second test port are different.
Optionally, one of the first test port and the second test port is connected to the first detection point for measuring a potential value at the first detection point, and the other is connected to the second detection point for measuring a potential value at the second detection point.
Optionally, a kelvin wiring method is used to connect the test port of the detection device and the resistor to be tested.
Optionally, the resistor to be measured is a milliohm-level resistor, and a resistance value of the milliohm-level resistor is less than 500 milliohms.
Optionally, the method for obtaining the resistance value of the resistor to be tested includes: obtaining a first resistance value according to the first current and the first voltage value; obtaining a second resistance value according to the second current and the second voltage value; and calculating the first resistance value and the second resistance value to obtain a resistance average value so as to obtain the resistance value of the resistor to be detected.
Optionally, a calculation formula of the resistance value of the resistor to be measured is as follows:
R＝1/2*[(V1+ΔV)-V2]/I1+[V4-(V3+ΔV)]/I1]，
wherein I1 represents a value of the first current or a value of the second current, V1 and V2 represent potential values of the first detecting point and the second detecting point, respectively, when the first current is applied, V3 and V4 represent potential values of the first detecting point and the second detecting point, respectively, when the second current is applied, and Δ V represents a potential difference between the first testing port and the second testing port in the testing apparatus.
In the resistance measuring method provided by the invention, the first current and the second current which are opposite in direction and same in size are respectively applied to the resistance to be measured, the corresponding first voltage value and the second voltage value are measured, and then the average value of the resistance values measured twice is calculated to obtain the measured value of the resistance to be measured.
Drawings
FIG. 1 is a comparison graph of measured resistance values of two different types of test equipment on a plurality of resistors to be tested on the same wafer in the prior art;
FIG. 2 is a flowchart of a method for measuring resistance according to an embodiment of the present invention;
fig. 3A-3B are schematic diagrams of a measuring circuit for a resistor to be measured according to an embodiment of the invention;
fig. 4 is a comparison graph of measured values of a plurality of resistors to be measured on the same wafer by two different detection apparatuses using the resistance measurement method according to an embodiment of the present invention.
Detailed Description
The method for measuring the resistance according to the present invention is further described in detail with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
Fig. 2 is a flowchart of a resistance measuring method according to an embodiment of the present invention. As shown in fig. 2, the present embodiment provides a method for measuring resistance, which is as follows.
Step S100: providing a resistor to be tested, wherein the resistor to be tested is provided with a first detection point and a second detection point which are opposite.
Step S200: performing a first detection process with a detection device, comprising: and applying a first current from the first detection point to the second detection point to the resistor to be detected, and acquiring a corresponding first voltage value by using the first test port and the second test port of the detection equipment.
Step S300: performing a second detection process with the detection device, comprising: and applying a second current from a second detection point to a first detection point to the resistor to be detected, and acquiring a corresponding second voltage value by using a first test port and a second test port of the detection device, wherein the first current and the second current have the same current value.
Step S400: and obtaining the average value of the resistance in the first detection process and the second detection process according to the first current, the first voltage value, the second current and the second voltage value so as to obtain the resistance value of the resistance to be detected.
The method for testing the wafer resistance provided in this embodiment is implemented, for example, by using Wafer Acceptance Test (WAT) automatic test equipment as detection equipment, and is mainly used for testing the on-resistance of a milliohm level. Wherein the automatic test equipment comprises a detection platform, such as a vacuum chuck. In step S100, a wafer to be detected is placed on a detection platform, for example, the wafer to be detected is placed on the detection platform with its back facing downward, and a plurality of resistors to be detected are disposed on the wafer to be detected. The resistor to be tested is a milliohm-level resistor, such as an on-resistor, and the resistance value of the milliohm-level resistor is less than 500 milliohms.
Meanwhile, a plurality of test ports are arranged in the detection device, including a first test port 210, a second test port 220, a third test port 230 and a fourth test port 240, where the first test port 210 and the second test port 220 are respectively used for testing voltage values, and the third test port 230 and the fourth test port 240 are used for forming a current excitation loop to apply current to the resistor 100 to be tested. Specifically, the first test port 210 and the second test port 220 are respectively connected to a voltmeter, the third test port 230 is a current source, and the fourth test port 240 is a ground terminal. The first test port 210, the second test port 220, the third test port 230, and the fourth test port 240 are all probes, for example.
Further, when the detection is not started, the potentials of the first test port 210 and the second test port 220 are different. Specifically, in the detection device, the first test port 210 and the second test port 220 are connected to different cables and connected to different meters with different accuracy, so that the first test port 210 and the second test port 220 have different potentials to form a certain meter differential pressure, thereby affecting the test result. In this embodiment, it is assumed that the first test port 210 has a higher potential than the second test port 220 when the detection is not started. The potential difference between the first test port 210 and the second test port 220 is Δ V, for example.
Next, step S200 is executed, and a first detection process is executed by using the detection device. Specifically, as shown in fig. 3A, four test ports are respectively connected to the resistors 100 to be tested to form a test circuit. The resistor 100 to be tested includes a first detecting point 110 and a second detecting point 120, which are oppositely disposed. In this embodiment, four test ports are mainly adjusted to contact with the detection points of the resistor 100 to be tested, so as to form a test circuit.
In this embodiment, a kelvin wiring method is used to connect the test port and the resistor 100 to be tested. Specifically, one of the first testing port 210 and the second testing port 220 is connected to the first detecting point 110 for measuring the potential at the first detecting point 110, and the other is connected to the second detecting point 120 for measuring the potential at the second detecting point 120. In this embodiment, as shown in fig. 3A, the first testing port 210 is connected to the first probing point 110, for example, and the second testing port 220 is connected to the second probing point 120.
With continued reference to fig. 3A, in step 200, the third testing port 230 is connected to the first probing point 110, and the fourth testing port 240 is connected to the second probing point 120, so as to apply a first current I1 flowing from the first probing point 110 to the second probing point 120 to the resistor 100 to be tested. Then, the first test port 210 and the second test port 220 are used to respectively obtain the potential V1 at the first detection point 110 and the potential V2 at the second detection point to obtain the first voltage value U1, and the first resistance value R1 is calculated.
In this embodiment, the potential difference between the first test port 210 and the second test port 220 is Δ V, for example. When the first current I1 is not applied, assuming that the voltage of the second test port 220 is 0, the actual voltage value at the first test port 210 is Δ V. Then, after the first current I1 is applied, the measured potential V1 at the first detecting point 110 and the measured potential V2 at the second detecting point 120 are both measured values. At this time, the actual potential value at the first detection point 110 is V1+ Δ V. Then, the first voltage value U1= (V1 + Δ V) -V2. And finally, calculating the first resistance value R1 by using ohm's law. That is, R1= U1/I1= [ (V1 + Δ V) -V2]/I1.
Then, step 300 is performed, and a second detection process is performed with the detection device. As shown in fig. 3B, in the test circuit formed in step S300, the third test port 230 is connected to the second probing point 120, and the fourth test port 240 is connected to the first probing point 110, so as to apply a second current I2 flowing from the second probing point 120 to the first probing point 110 to the resistor 100 to be tested. Wherein the first current I1 and the second current I2 have the same current value. Then, the first test port 210 and the second test port 220 are used to measure the potential at the first detecting point 110 as V3 and the potential at the second detecting point 120 as V4, respectively. At this time, the actual potential value at the first detection point 110 is V3+ Δ V. Then, the second voltage value U2= V4- (V3 + Δ V). And finally, calculating the second resistance value R2 by using ohm law. That is, R2= U2/I1= [ V4- (V3 + Δ V) ]/I1.
Finally, step S400 is executed to obtain the resistance value of the resistor 100 to be tested by averaging the resistance values obtained in step S200 and step S300, respectively. Specifically, the measured resistance value R = (R1 + R2)/2 = (1/2) [ (V1 + Δ V) -V2]/I1+ [ V4- (V3 + Δ V) ]/I1] =1/2 [ (V1-V2) + (V4-V3) ]/I1). At this time, the potential difference Δ V between the first test port 210 and the second test port 220 is eliminated.
Fig. 4 is a comparison graph of measured values of two different testing apparatuses for testing the resistance to be tested on the same wafer by using the resistance measuring method according to an embodiment of the present invention. As shown in fig. 4, with the measuring method provided in this embodiment, the difference between the measured values of the plurality of resistors to be measured by two different detecting devices is greatly reduced, and is substantially within 1%.
Therefore, in the embodiment, the first current and the second current which are opposite in direction and same in size are respectively applied to the resistor to be measured, the corresponding first voltage value and the second voltage value are measured, the average value of the resistance values measured twice is calculated to obtain the measured value of the resistor to be measured, and the instrument differential pressure generated in the detection equipment can be mutually offset in the calculation process, so that the influence of the instrument differential pressure on the measurement result is effectively reduced, and the measurement accuracy is greatly improved.
In summary, in the resistance measurement method provided in the embodiment of the present invention, the first current and the second current with opposite directions and the same magnitude are respectively applied to the resistance to be measured, the corresponding first voltage value and the second voltage value are measured, and then the average value of the two measured resistance values is calculated to obtain the measured value of the resistance to be measured.
The above description is only for the purpose of describing the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are intended to fall within the scope of the appended claims.
Claims (10)
1. A method of measuring resistance, comprising:
providing a resistor to be detected, wherein the resistor to be detected is provided with a first detection point and a second detection point which are opposite;
performing a first detection process with a detection device, comprising: applying a first current from a first detection point to a second detection point to a resistor to be detected, and acquiring a corresponding first voltage value by using a first test port and a second test port of the detection equipment;
performing a second detection process with the detection device, comprising: applying a second current from a second detection point to a first detection point to the resistor to be detected, and acquiring a corresponding second voltage value by using a first test port and a second test port of the detection equipment, wherein the first current and the second current have the same current value; and (c) a second step of,
and obtaining the average value of the resistance in the first detection process and the second detection process according to the first current, the first voltage value, the second current and the second voltage value so as to obtain the resistance value of the resistance to be detected.
2. The method of measuring resistance of claim 1, wherein the test equipment further comprises a third test port and a fourth test port, the third test port and the fourth test port being configured to form a current excitation loop to apply a current to the resistance under test.
3. The method of measuring resistance of claim 2, wherein the third test port is a current source and the fourth test port is a ground; when a first detection process is executed, the third test port is connected with the first detection point, and the fourth test port is connected with the second detection point; when a second detection process is executed, the fourth test port is connected with the first detection point, and the third test port is connected with the second detection point.
4. The method of measuring resistance of claim 2, wherein the first test port, the second test port, the third test port, and the fourth test port are all probes.
5. The method of measuring resistance according to claim 1, wherein the first test port and the second test port have different potentials when detection is not started.
6. The method for measuring a resistance according to claim 5, wherein one of said first test port and said second test port is connected to said first detection point for measuring a potential value at said first detection point, and the other is connected to said second detection point for measuring a potential value at said second detection point.
7. The method for measuring the resistance of claim 1, wherein a kelvin wiring method is used to connect the test port of the test device and the resistance to be measured.
8. The method for measuring the resistance according to claim 1, wherein the resistance to be measured is a milliohm-level resistance having a resistance value of less than 500 milliohms.
9. The method for measuring the resistance according to claim 1, wherein the method for obtaining the resistance value of the resistance to be measured comprises: obtaining a first resistance value according to the first current and the first voltage value; obtaining a second resistance value according to the second current and the second voltage value; and calculating the first resistance value and the second resistance value to obtain a resistance average value so as to obtain the resistance value of the resistor to be detected.
10. The method for measuring the resistance according to claim 9, wherein the resistance value of the resistor to be measured is calculated by the formula:
R＝1/2*[(V1+ΔV)-V2]/I1+[V4-(V3+ΔV)]/I1]，
wherein I1 denotes a current value of the first current or the second current, V1 and V2 denote potential values of the first detecting point and the second detecting point, respectively, when the first current is applied, V3 and V4 denote potential values of the first detecting point and the second detecting point, respectively, when the second current is applied, and Δ V denotes a potential difference between the first testing port and the second testing port in the testing device.
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| CN202210744393.1A CN115166363A (en) | 2022-06-27 | 2022-06-27 | Resistance measuring method |
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| CN202210744393.1A CN115166363A (en) | 2022-06-27 | 2022-06-27 | Resistance measuring method |
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| CN115166363A true CN115166363A (en) | 2022-10-11 |
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