CN115152108A - Program for simulation modeling of organic solid-state laser - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
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Abstract
Disclosed is a program for simulation modeling of an organic solid-state laser device, which includes an electrical transmission module, a thermal module, an optical module, and a rate equation module, wherein the four modules can be used alone or coupled to each other.
Description
Technical Field
The present invention relates to a procedure for performing simulation modeling of electricity, heat and light to design dynamic and steady-state behavior of organic solid-state lasers, such as current-injected organic (or excitonic) semiconductor lasers.
Background
In the past two decades, organic Semiconductor Lasers (OSLs) have received much attention due to their advantageous properties, such as tunability of wavelengths in the visible range, low manufacturing costs, flexibility, and large-scale manufacturing. These characteristics make it an excellent candidate for a range of applications including sensing, spectroscopy, and optical communication. In 1996, solid-state OSL under short-pulse (. About.ns) optical pumping was demonstrated [1]]However, OSL and quasi-continuous mechanism (quasi-continuous region) of Organic Semiconductor Laser Diode (OSLD) were verified after 20 years [2]]. However, the first validated OSLD had a very high threshold current density (i.e., -600A/cm) 2 ) And its life is short. In fact, there are more loss mechanisms in OSLDs than those present in optically pumped organic lasers. These losses occur mainly due to the low charge carrier mobility of the organic semiconductor, the contact and accumulation of triplet excitons and polarons. In order to reduce the threshold current density of OSLDs, it is desirable to suppress various loss processes inherent to organic semiconductor materials and device structures including resonators.
There are many laser simulation software and programs, such as ATLAS by Silvaco Inc., laserMOD by Synopsys Inc., VISTA AS, LASCAD, etc. Some software in these is only capable of performing optical simulation, ATLAS is only capable of performing electrical, thermal and optical simulation of two types of resonators: 1) Vertical Cavity Surface Emitting Lasers (VCSELs) and 2) waveguide edge emitting lasers. The model used in ATLAS is specific to inorganic semiconductors, which differ from organic semiconductors especially in terms of gain and material loss.
Prior art documents
Non-patent literature
NPL1：Malliaras,G.,Salem,J.,Brock,P.&Scott,C.Electrical characteristics and efficiency of single-layer organic light-emitting diodes.Phys.Rev.B 58,R13411-R13414(1998).
NPL2：Staudigel,J.,Stoessel,M.,Steuber,F.&Simmerer,J.A quantitative numerical model of multilayer vapor-deposited organic light emitting diodes.J.Appl.Phys.86,3895(1999).
NPL3：Kumar,V.,Jain,S.C.,Kapoor,A.K.,Poortmans,J.&Mertens,R.Trap density in conducting organic semiconductors determined from temperature dependence of J-V characteristics.J.Appl.Phys.94,1283-1285(2003).
NPL4：Nicolai,H.T.,Mandoc,M.M.&Blom,P.W.M.Electron traps in semiconducting polymers:Exponential versus Gaussian trap distribution.Phys.Rev.B-Condens.Matter Mater.Phys.83,195204(2011).
NPL5：Connell,G.A.N.,Camphausen,D.L.&Paul,W.Theory of Poole-Frenkel conduction in low-mobility semiconductors.Philos.Mag.26,541-551(1972).
NPL6：Pautmeier,L.,Richert,R.&Baessler,H.Poole-Frenkel behavior of charge transport in organic solids with off-diagonal disorder studied by Monte Carlo simulation.Synth.Met.37,271-281(1990).
NPL7：Van Mensfoort,S.L.M.,Vulto,S.I.E.,Janssen,R.A.J.&Coehoorn,R.Hole transport in polyfluorene-based sandwich-type devices:Quantitative analysis of the role of energetic disorder.Phys.Rev.B-Condens.Matter Mater.Phys.78,1-10(2008).
NPL8：Pope,M.&Swenberg,C.E.Electronic Processes in Organic Crystals and Polymers.(New York:Oxford Univ.Press,1999).
NPL9：Campbell Scott,J.&Malliaras,G.G.Charge injection and recombination at the metal-organic interface.Chem.Phys.Lett.299,115-119(1999).
NPL10：Zhao,Z.,Mhibik,O.,Leang,T.,Forget,S.&Chenais,S.Thermal effects in thin-film organic solid-state lasers.Opt.Express 22,30092-30107(2014).
Disclosure of Invention
In view of the above circumstances, the present inventors have made intensive studies and have an object to provide a more practical and useful program for simulation modeling of an organic solid-state laser device. As a result of intensive studies, the present inventors have completed the following inventions:
[1] a program for simulation modeling of an organic solid-state laser device includes an electrical transmission module, a thermal module, an optical module, and a rate equation module, wherein the four modules can be used alone or coupled to each other.
[2] The program of [1], wherein the electrical transmission module calculates a charge carrier transport (charge carrier transport) and a recombination rate (recombination rate) of the device.
[3] The program according to [1] or [2], wherein the optical module solves a light propagation equation to calculate intensities and fields of optical resonance modes and photonic band diagrams (photonic band diagrams).
[4] The program according to [1] to [3], wherein the optical module calculates near-field and far-field diffraction patterns.
[5] The program according to [1] to [4], wherein the thermal module calculates heat generation and diffusion within the apparatus, and estimates heat-induced loss.
[6] The program of [1] to [5], wherein the rate equations module solves laser rate equations including gain, exciton annihilation and quenching processes to calculate dynamic and steady state laser characteristics.
[7] The program of [6], wherein the dynamics includes time dependency population density (population density).
[8] The program according to [6] or [7], wherein the steady-state laser characteristics include laser input/output, light/voltage, and current/voltage characteristics.
[9] The program of [1] to [8], wherein the rate equation module performs numerical analysis and estimation of Thermal Activated Delayed Fluorescence (TADF) material attenuation.
[10] The program according to [1] to [9], wherein at least two of the four modules are coupled to each other.
[11] The program according to [1] to [9], wherein at least three of the four modules are coupled to each other.
[12] The program according to [1] to [9], wherein all of the four modules are coupled to each other.
[13] The program of [1] to [10], wherein the electrical transmission module is coupled with the optical module to calculate a gain.
[14] The program of [1] to [11], wherein the electrical transmission module is coupled with the thermal module and the rate equation module.
[15] The program according to [1], [13] and [14], which is used for simulation modeling of an organic electrically driven semiconductor laser device.
[16] The program of [1] to [11], wherein the optical module is coupled with the thermal module and the rate equation module.
[17] The program according to [1] or [16], which is used for simulation modeling of an organic optically pumped solid-state laser device.
[18] According to the procedure described in [1] to [17], it outputs current/voltage and EQE-current curves.
[19] According to the procedure of [1] to [18], it outputs at least one of a current density, an electric field, a charge carrier density, and a spatial distribution of an exciton density.
[20] According to the procedure described in [1] to [19], it outputs an optical resonance mode and a photonic band diagram.
[21] According to the procedure of [1] to [20], it outputs a modal gain and a net gain.
[22] According to the procedures described in [1] to [21], it outputs a quality factor (quality factor) of the resonator and a limiting factor (boundary factor) of the resonator.
[23] According to the procedure described in [1] to [22], it outputs steady-state and time-dependent charge carrier, exciton and photon density curves.
[24] The program according to [1] to [23], which outputs time-dependent exciton and photon densities below and above a threshold value.
[25] According to the procedures described in [1] to [24], it outputs a steady-state input/output laser characteristic.
[26] The program according to [1] to [25], which outputs a light/voltage characteristic.
[27] According to the procedure described in [1] to [26], it outputs laser light outcoupling (laser light outcoupling).
[28] According to the procedures described in [1] to [27], it outputs near-field and far-field patterns.
[29] A computer installed with the program of [1] to [28 ].
[30] A simulation modeling method of an organic solid-state laser device, comprising executing the procedures of [1] to [29 ].
[31] An organic solid-state laser device designed by executing the procedures of [1] to [30 ].
The invention can implement the electric, thermal and optical coupling simulation of the organic solid-state laser. Through these procedures, the dynamic and steady-state behavior of organic (or excitonic) lasers including different types of resonators and all known losses inherent to organic and hybrid materials can be studied with the goal of optimization of device and material design.
Drawings
Fig. 1 shows a flow chart of simulation modeling of an organic solid-state laser.
Fig. 2 shows the temperatures calculated at different power densities in the center of the BSBCz layer.
FIG. 3-1 shows a) the singlet density and b) the photon density above threshold.
Fig. 3-2 shows c) laser input-output characteristics.
Fig. 4 shows the influence of a) the limiting factor and b) the quality factor on the laser input/output characteristics.
Detailed Description
The present invention will be described in detail below. Hereinafter, the constituent elements of the present invention will be described with reference to representative embodiments and specific examples of the present invention, but the present invention is not limited to these embodiments and examples.
The term "organic solid state laser" includes electrically driven organic semiconductor laser diode devices and optically pumped solid state laser devices.
The procedure of the present invention performs one-, two-and three-dimensional coupling simulations of electricity, heat and light of organic (or exciton) solid-state lasers. Fig. 1 shows a flow chart of the procedure of the present invention. The program is divided into four modules: the system comprises an electric transmission module, a thermal module, an optical module and a rate equation module.
1) The charge carrier transmission and recombination rate of the device can be calculated by the electric transmission module.
2) The optical propagation equations can be solved by the optical module to calculate the intensity and field of the optical resonance modes and the photonic band diagrams. In addition, near field and far field diffraction patterns can be calculated through the optical module.
3) The heat generation and diffusion in the laser device can be calculated by the thermal module and the heat-induced loss can be estimated.
4) The laser rate equations, including the gain, exciton annihilation and quenching processes, can be solved by the rate equation module to calculate dynamic (time-dependent population density) and steady-state laser characteristics (laser input/output, light/voltage and current/voltage characteristics). The module is also dedicated to the numerical analysis and estimation of the decay of Thermally Activated Delayed Fluorescence (TADF) materials.
The modules can be used alone or coupled to each other. In some embodiments, the electrical transmission module is coupled with at least one of the thermal module, the optical module, and the rate equation module. In some embodiments, the thermal module is coupled to at least one of the electrical transmission module, the optical module, and the rate equation module. In some implementations, the optical module is coupled with at least one of the electrical transmission module, the thermal module, and the rate equation module. In some implementations, the rate equations module is coupled with at least one of the electrical transmission module, the thermal module, and the optical module. In some embodiments, the electrical transmission module, the thermal module, and the optical module are coupled to one another. In some embodiments, the electrical transmission module, the thermal module, and the rate equation module are coupled to one another. In some implementations, the electrical transmission module, the optical module, and the rate equation module are coupled to one another. In some embodiments, the thermal module, the optical module, and the rate equations module are coupled to one another. In a preferred embodiment, the electrical transmission module is coupled to the optical module to calculate the gain. Which is dedicated to electrically driving the laser. In a preferred embodiment, the optical module is coupled to the thermal module and the rate equations module and is dedicated to the optically pumped laser. In a preferred embodiment, the electrical transmission module is coupled to the thermal module and the rate equation module and is dedicated to electrically driving the laser. In some embodiments, the four modules described above can be used individually.
The output of the above program includes, for example, the following:
1) The current/voltage and EQE-current curves,
2) The spatial distribution of current density, electric field, charge carrier density, exciton density,
3) Optical resonance modes and photonic band diagrams,
4) The modal gain and the net gain are,
5) The quality factor and the confinement factor of the resonator,
6) Steady state and time dependent charge carrier, exciton and photon density profiles,
7) Time-dependent laser and photon densities below and above the threshold,
8) The steady-state input/output laser characteristics,
9) The light/voltage characteristics of the light/voltage,
10 Laser outcoupling, and
11 Near field and far field patterns.
The program of the present invention may be stored in a recording medium for storage and use, or may be operated by a computer. In addition, it can be used in combination with artificial intelligence, or design accuracy can be improved with a deep learning function.
1. Electric model
The charge carrier transport by OSLD is explained using a two generation model. In the first generation model, the charge carrier mobility may be constant or of the Poole-Frenkel (Poole-Frenkel) type, and the classical Einstein relationship (classical Einstein correlation) is used to calculate the diffusion constant from the charge carrier mobility. The second generation model takes into account disorder (disorder) in organic semiconductors. In the first generation model, the drift-diffusion (drift-diffusion) equation for holes and electrons is coupled with the Poisson (Poisson) equation and continuity equation for charge carriers. The poisson equation relates the electrostatic potential Ψ to the space charge density as follows.
[ formula 1]
Assuming parabolic density of states and Maxwell-Boltzmann statistics, the electron and hole concentrations can be expressed as follows.
[ formula 2]
The presence of charge carrier traps (traps) in organic semiconductors is caused by structural defects and/or impurities. The injected charge must first fill the traps before the current (extinguishing a current) is established. This state (regime) is called Trap-limited Current (TLC). 1，2 Exponential or Gaussian distributions (Gaussian distribution) are used for modeling the trap distribution within the organic semiconductor layer. 3 A gaussian distribution of hole trap states is used here, 4 and is given by the following formula.
[ formula 3]
The free and trapped (trapped) charge carrier densities are obtained by integrating a Fermi-Dirac distribution (Fermi-Dirac distribution) with a density of states N times.
The current density of electrons and holes includes a drift current density due to an electric field and a diffusion current density due to diffusion of charge carriers from a low concentration region to a high concentration region. The drift current density and the diffusion current density are given by the following equations.
[ formula 4]
The total current in the device is the sum of the electron and hole currents.
The equation for continuity of electrons and holes (due to charge conservation) is given by the following equation.
[ formula 5]
The charge carrier mobility can be assumed to be field-dependent and to have the following pul-frank form 5，6 。
[ formula 6]
Extended Gaussian Disorder Model (EGDM) capable of using charge carrier mobility 7 Including disorder in the organic material. Energy disorder (energetic disorder) is not considered in this model, so it is assumed that the einstein relation is valid to calculate the diffusion constant from the charge mobility. The recombination rate R is given by Langevin model 8 。
[ formula 7]
Boundary condition and numerical method
At the electrode, assuming an effective potential of V eff ＝V Application (applied) -V Inherent (build-in) (V Is inherently Calculated from the difference in electrode work functions).
A Dirichlet boundary condition (Dirichlet boundary condition) can be used as a boundary condition regarding the charge density.
Injection of charge carriers depends on the energy barrier (energetic barrier) between the organic material and the machine and can be exploited by reference 9 The method as described in (1).
Nonlinear coupled partial differential equations (non linear coupled partial differential equations) can be solved numerically using the well-known discretized newton method or the cummular method (Gummel method).
2. An optical model: solving the Helmholtz equation (Helmholtz equalisation)
The resonator is numerically characterized by calculating the confinement factor Γ and the quality Q-factor. The light is illustrated by means of an electric field e. The wave equation for light propagation in the cavity is as follows.
[ formula 8]
The equation is hyperbolic and somewhat challenging to solve, but the electric field is expressed as follows.
[ formula 9]
[ formula 10]
Here, spatial and temporal dependencies are separated.
where k =2 pi/λ is the wave number. A discrete variate method is used, which is an effective method to solve partial differential equations. This equation is called helmholtz equation, which is parabolic (second order partial differential equation). Thus, there is one function for each frequency ω
So that the electric field E (x, t) satisfies the wave equation. The angular frequency omega is related to a characteristic value of the system,
are the corresponding feature vectors. Then, the Helmholtz equation is solved by using a finite difference method. In the case of a periodic structure, the computation domain is limited to one unit domain. FloChat periodic boundary conditions are used for the side boundary (lateral boundary) and scattering boundary conditions are used for the top and bottom boundaries. Then, the eigenvalues of the eigenmodes of the resonator are calculated. From the real and imaginary parts of the eigenvalues, the Q factor is derived by the following equation.
From the resulting electric field distribution of the resonance mode, the limiting factor Γ is calculated as follows.
[ formula 11]
3. And (3) thermal modeling: diffusion of heat transfer
The transient heat transfer model is used to detect the temperature distribution within the OSLD. The governing partial differential equation of the temperature distribution is expressed as follows.
[ formula 12]
With respect to optically pumped lasers, Q is the power bulk density of the light source applied on the surface of the organic solid state laser. In the case of a Gaussian input laser beam shape (Gaussian input laser beam shape), the heat transfer equation is solved in cylindrical coordinates. With respect to pulsed Gaussian laser beam heat sources, heat sources according to the reference 10 The description is as follows.
[ formula 13]
In the absence of a laser field, the conversion of the absorbed pump power into a heat fraction (fraction) in the gain region is given by the following equation.
[ formula 14]
η g ＝1-φ PL λ Pumping system /λ Laser beam (19)
As for the boundary condition, in the radial direction, a symmetric boundary condition is used at the rotation axis. Thermal insulation boundary conditions apply to the bottom, top and edge surfaces.
With regard to OSLD (electrically driven type), joule heat generated in the device is converted into power by multiplying current by voltage calculated using an electrical model. The power is then converted to heat using equation 17.
The electrical model may also include calculations of heat generation Q based on drift and diffusion currents as follows.
[ formula 15]
4. Coupling of electrical, optical and thermal modules: rate equation, EQE and gain
Rate equation and model of annihilation and depletion process of organic material
The dynamics and the steady state of Organic Semiconductor Laser Diodes (OSLDs) are studied by numerically solving the rate equations for exciton and photon density. The rate equations include intersystem crossing, reverse intersystem crossing, various annihilation and absorption loss processes. The reaction of the interaction between the particles is given by the following formula.
[ formula 16]
Therefore, rate equations of singlet exciton density S, triplet exciton density T, and photon density P are given by the following formulas.
[ formula 17]
Numerical method: the coupled differential rate equations can be solved using the Runge Kutta method.
EQE: under steady state conditions and below lasing threshold, the External Quantum Efficiency (EQE) can be calculated as follows:
[ formula 18]
Gain: gain (g) is an indicator of light amplification in the lasing mode, which can also be calculated as a function of current density from the overlap of exciton density distribution and optical field distribution using the following equation:
[ formula 19]
If all losses from the rate equation above are eliminated, the gain can be calculated. On the other hand, if the loss process is considered, the net gain can be calculated.
By integrating OSLD design, modeling, and analysis workflows, an easily understandable software suite (software suite) can be created. Software with its own complete graphical user interface supports different types of OSLD analysis (electrical, optical, thermal) and two-and three-dimensional modeling, using custom data-object backends (OSLD) for linking workflow steps together. With future-developed architecture of other modules supporting modeling and analysis, the capabilities, performance, and accessibility of software can be made to evolve in accordance with OSLD research and device manufacturer requirements, which are constantly changing as technology progresses.
All model parameters are shown in the following table.
[ tables 1-1]
| Parameter(s) | Unit of | Description of the invention |
| ε r | - | Relative dielectric constant of material |
| ε r | Fm -1 | Dielectric constant in vacuum |
| F | Vm -1 | Electric field |
| q | c | Basic charge |
| n | cm -3 | Concentration of electrons |
| p | cm -3 | Concentration of holes |
| n t | cm -3 | Concentration of filled electron trap states |
| p t | cm -3 | Concentration of filled hole trap states |
| E HOMO | eV | Energy level of HOMO |
| E LUMO | eV | Energy level of LUMO |
| N HOMO | cm -3 | Density of states of HOMO |
| N LUMO | cm -3 | Of LUMODensity of states |
| E fn | eV | Quasi-fermi level of electrons |
| E fp | eV | Quasi-fermi level of holes |
| N tn | cm -3 | Total density of receptor-like (acceptor-like) traps |
| N tp | cm -3 | Total density of donor-like (donor-like) traps |
| E tn | eV | Trap energy depth below LUMO energy level |
| E tp | eV | Trap energy depth above HOMO level |
| k B | J/K | Boltzmann constant |
| T | K | Temperature of the device |
| T 0 | K | Characteristic temperature |
| σ tn | eV | Width of gaussian distribution of acceptor-like traps |
| σ tp | eV | Width of gaussian distribution of donor-like traps |
| J n | Acm -2 | Electron current density |
| J p | Acm -2 | Hole current density |
| D n | cm 2 s -1 | Diffusion constant of electrons |
[ tables 1-2]
| Parameter(s) | Unit | Description of the invention |
| D p | cm 2 s -1 | Diffusion constant of holes |
| μ n0 | cm 2 V -1 s -1 | Zero field (zero field) electron mobility |
| μ p0 | cm 2 V -1 s -1 | Zero field hole mobility |
| F 0n | Vcm -1 | Characteristic field of electrons |
| F 0p | Vcm -1 | Characteristic field of holes |
| R | cm -3 s -1 | Bimolecular recombination rate |
| G | cm -3 s -1 | Exciton generation rate |
| k r | s -1 | Radiative decay constant of singlet excitons |
| k nr | s -1 | Non-radiative decay constant of singlet excitons |
| k T | s -1 | Radiative decay constant of triplet excitons |
| k th | WK -1 m 1 | Thermal conductivity |
| C p | Jkg -1 K -1 | Specific heat capacity |
| ρ | kgm -3 | Density of material |
| α | m -1 | Coefficient of absorption |
| Q | Laser heat source item | |
| I R | ％ | Pump reflection |
| P | W | Incident (Incident) pump power |
| r,z | m | Spatial coordinates |
| η g | ％ | Fraction of absorbed pump power in the gain region |
| r 0 | m | 1/e of pump laser beam 2 Radius of |
| Φ PL | ％ | Fluorescence quantum yield |
| H(t) | - | Pulse function of pump |
| τ p | s | Pulse width |
| z g | m | Z coordinate of pumping source |
| λ Pump | m | Pump input laser wavelength |
[ tables 1 to 3]
| Parameter(s) | Unit of | Description of the invention |
| λ Laser | m | Emitting output laser wavelength |
| σ stim | cm 2 | Stimulated emission cross section |
| σ TT | cm 2 | Triplet-triplet absorption cross section |
| σ SS | cm 2 | Singlet-singlet absorption cross section |
| c | m/s | Speed of light |
| n eff | - | Effective refractive index |
| g | ％ | Singlet-triplet exciton ratio |
| k SPA | cm 3 /s | Polaron-triplet annihilation constant |
| k STA | cm 3 /s | Singlet-triplet annihilation constant |
| k TTA | cm 3 /s | Triplet-triplet annihilation constant |
| Q factor | - | Quality factor |
| λ res | m | Resonant wavelength |
| k cav | s -1 | 2Q-factor (lambda) res /(2πc)) |
| Γ | ％ | Limiting factor |
| β | - | Self-emission coupling factor |
| R diss | s -1 | Dissociation velocity of excitons based on electric field |
| η out | ％ | Light outcoupling (Light outcoupling) |
| d | m | Composite zone width |
(example 1)
Calculation of heat generated in coupled OSLD between electrical and optical modeling
Figure 2 illustrates the temperature rise and cooling of an OSLD for different values of electrical power at a pulse current of 400 ns.
(example 2)
Coupling between electrical and optical modelling
Effect of STA on laser threshold
By STA, singlet excitons can be quenched by triplet excitons. In this process, the energy of the singlet excitons is transferred to the triplet excitons, which are excited to a higher excited triplet state. Subsequently, the excited triplet exciton relaxes rapidly to the first excited triplet state. Fig. 1 shows the effect of STA on exciton density and lasing threshold. As the STA rate constant increases, the singlet exciton and photon density decreases, which results in an increase in threshold. Calculations show that exciton depletion only affects the lasing threshold (slope efficiency is not affected).
Fig. 3-1 shows a) singlet density, b) photon density above threshold, and fig. 3-2 shows laser input/output characteristics.
2. Influence of resonant Cavity characteristics
Laser input/output characteristics can be calculated for different limiting factors and quality factors. Calculations indicate that photon loss affects both threshold and slope efficiency.
Fig. 4 shows the influence of a) the limiting factor and b) the quality factor on the laser input/output characteristics.
Claims (14)
1. A program for simulation modeling of an organic solid-state laser device includes an electrical transmission module, a thermal module, an optical module, and a rate equation module, wherein the four modules can be used individually or coupled to each other.
2. The program according to claim 1, wherein,
the electrical transport module calculates the charge carrier transport and recombination rates of the device,
the optical module solves the light propagation equation to calculate the intensity and field of the optical resonance modes and the photonic band diagrams, or the optical module calculates the near-field and far-field diffraction patterns,
the heat generation and diffusion within the thermal module computing device and estimating the heat-induced losses, an
The rate equation module solves laser rate equations including gain, exciton annihilation and quenching processes to calculate dynamic and steady-state characteristics of the laser, or the rate equation module performs numerical analysis and estimation of Thermal Activated Delayed Fluorescence (TADF) material decay.
3. The program according to claim 1 or 2, wherein,
at least two of the four modules are coupled to each other.
4. The program according to claim 1 or 2, wherein,
at least three of the four modules are coupled to each other.
5. The program according to claim 1 or 2, wherein,
the four modules are all coupled to each other.
6. The program according to any one of claims 1 to 5,
the electrical transmission module is coupled with the optical module to calculate gain.
7. The program according to any one of claims 1 to 5,
the electrical transmission module is coupled with the thermal module and the rate equation module.
8. The program according to any one of claims 1 to 7, which is simulation modeling for an organic electrically driven semiconductor laser device.
9. The program according to any one of claims 1 to 5,
the optical module is coupled with the thermal module and the rate equation module.
10. The program of claims 1-5 and 9, which is for simulation modeling of an organic optically pumped solid state laser device.
11. The program according to any one of claims 1 to 10, which outputs at least one of:
current/voltage and EQE-current curves,
at least one of a current density, an electric field, a charge carrier density and a spatial distribution of exciton densities,
-an optical resonance mode and a photonic band diagram,
-a modal gain and a net gain,
-a quality factor of the resonator and a confinement factor of the resonator,
steady state and time dependent charge carrier, exciton and photon density curves,
time-dependent laser and photon densities below and above a threshold,
-steady state input/output laser light characteristics,
-a light/voltage characteristic of the light,
laser outcoupling, and
near field and far field patterns.
12. A computer in which the program of any one of claims 1 to 11 is installed.
13. A simulation modeling method of an organic solid-state laser device, comprising executing the program of any one of claims 1 to 11.
14. An organic solid-state laser device designed by executing the procedure of any one of claims 1 to 11.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019233919 | 2019-12-25 | ||
| JP2019-233919 | 2019-12-25 | ||
| PCT/JP2020/048837 WO2021132599A1 (en) | 2019-12-25 | 2020-12-25 | Program for simulation modeling of organic solid-state lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115152108A true CN115152108A (en) | 2022-10-04 |
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| US11539190B2 (en) * | 2016-09-02 | 2022-12-27 | Kyushu University, National University Corporation | Continuous-wave organic thin-film distributed feedback laser and electrically driven organic semiconductor laser diode |
| KR102567101B1 (en) * | 2017-02-07 | 2023-08-16 | 고쿠리쓰다이가쿠호진 규슈다이가쿠 | Current-injection organic semiconductor laser diode, method for producing same and program |
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| CN117787021A (en) * | 2024-02-28 | 2024-03-29 | 中国人民解放军海军工程大学 | Laser far field energy density estimation method |
| CN117787021B (en) * | 2024-02-28 | 2024-05-07 | 中国人民解放军海军工程大学 | Laser far field energy density estimation method |
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