CN115148434B - Resistor structure and manufacturing method thereof - Google Patents
Resistor structure and manufacturing method thereof Download PDFInfo
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- CN115148434B CN115148434B CN202210887588.1A CN202210887588A CN115148434B CN 115148434 B CN115148434 B CN 115148434B CN 202210887588 A CN202210887588 A CN 202210887588A CN 115148434 B CN115148434 B CN 115148434B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C10/00—Adjustable resistors
- H01C10/16—Adjustable resistors including plural resistive elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/26—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by converting resistive material
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Abstract
The invention provides a resistor structure and a manufacturing method thereof, wherein the resistor structure comprises: a substrate; the metal layer is arranged on the substrate, and an electrode area, a non-electrode area and an isolation area are arranged on the metal layer; the non-electrode area is provided with a resistance adjusting layer for adjusting the resistivity of the resistance structure; an electrode layer is arranged in the electrode region; a first insulating layer is arranged in the isolation region; and a second insulating layer is arranged on the resistance adjusting layer. According to the invention, the resistance value adjusting layer is arranged on the metal layer to adjust the overall resistivity of the resistor interface, so that the resistance value of the resistor structure is adjusted, and the adjusted resistance value meets the use requirement under the condition of determining the resistance size.
Description
Technical Field
The present disclosure relates to electronic devices, and particularly to a resistor structure and a method for manufacturing the resistor structure.
Background
With the rapid development of technology, various devices are increasingly miniaturized and portable. The corresponding electronic components composing various devices are becoming smaller and smaller, and the trend is also current. For the resistor element, the resistance value of the resistor element can be adjusted by changing the resistance area, the length, the material and the like, or the whole volume of the resistor element is changed.
In the application process of the resistor element, certain relation exists between the thickness, the area and other size information of the surface resistor and the resistance value of the resistor. In the case that the specific structure of the resistor is not changed, the resistance value of the resistor is usually a fixed resistance value. In the case of a requirement for the resistance size information, the resistance value of the resistor cannot be modulated and is not enough to meet the current use requirement. For example, the current minimum size of the resistor is 01005, and the resistor value (minimum) at that size may still not meet the usage scenario requirement.
Disclosure of Invention
The invention mainly aims to provide a resistor structure and a manufacturing method thereof, and aims to solve the technical problem that the resistance value of a resistor cannot meet the use requirement under the condition of determining the size of the resistor in the prior art.
To achieve the above object, the present invention proposes a resistor structure including:
a substrate;
the metal layer is arranged on the substrate, and an electrode region, a non-electrode region and an isolation region arranged between the electrode region and the non-electrode region are arranged on the metal layer;
the non-electrode area is provided with a resistance adjusting layer for adjusting the resistivity of the resistance structure;
an electrode layer is arranged in the electrode region;
a first insulating layer is arranged in the isolation region;
and a second insulating layer is arranged on the resistance adjusting layer.
Optionally, when the resistance of the resistive structure needs to be reduced, the resistivity of the resistance adjusting layer is smaller than or equal to the resistivity of the metal layer.
Optionally, when the resistance of the resistive structure needs to be increased, the resistivity of the resistance adjusting layer is greater than the resistivity of the metal layer.
Optionally, the resistor structure further includes a contact layer disposed on the substrate, and the metal layer is disposed on the contact layer.
Optionally, the first insulating layer and the second insulating layer are composed of an organic material, an inorganic material, or a combination of an organic material and an inorganic material.
Optionally, the electrode layer includes: a first metallization region and a second metallization region;
the electrode region comprises a first electrode region and a second electrode region which are respectively arranged at two ends of the metal layer;
the first metal hanging area is arranged in the first electrode area, and the second metal hanging area is arranged in the second electrode area.
Optionally, the first and second metallization regions each include: a copper layer of a first predetermined thickness;
the nickel layer is arranged on the copper layer and has a second preset thickness;
and a tin layer with a third preset thickness arranged on the nickel layer.
In order to achieve the above object, the present invention further provides a method for manufacturing a resistor structure, where the method for manufacturing a resistor structure includes:
obtaining a substrate;
providing a metal layer on the substrate;
a first insulating layer is arranged in an isolation region on the metal layer, and a resistance adjusting layer is arranged in a non-electrode region;
a second insulating layer is arranged on the resistance adjusting layer;
and plating an electrode layer in the electrode area on the metal layer.
Optionally, the step of disposing a resistance value adjusting layer in the non-electrode area includes:
determining resistance adjustment requirements of the resistive structure and resistivity of the metal layer;
selecting a resistance value adjusting layer material according to the resistance value adjusting requirement and the resistivity of the metal layer;
and setting a resistance adjusting layer in a non-electrode area on the metal layer by using the selected resistance adjusting layer material.
Optionally, the step of selecting the resistance value adjusting layer material according to the resistance value adjusting requirement and the metal layer material comprises the following steps of;
when the resistance adjustment requirement is to reduce the resistance of the resistance structure, selecting a material with resistivity smaller than or equal to that of the metal layer as a resistance adjustment layer material;
when the resistance adjustment requirement is to improve the resistance of the resistance structure, selecting a material with the resistivity larger than that of the metal layer as a material of the resistance adjustment layer.
The invention provides a resistor structure and a manufacturing method thereof, wherein the resistor structure comprises: a substrate; the metal layer is arranged on the substrate, and an electrode area and a non-electrode area are arranged on the metal layer; the non-electrode area is provided with a resistance adjusting layer for adjusting the resistivity of the resistance structure; an electrode layer is arranged in the electrode region, a first insulating layer is arranged in the isolation region, and a second insulating layer is arranged on the resistance adjusting layer. According to the invention, the resistance value adjusting layer is arranged on the metal layer to adjust the overall resistivity of the resistor interface, so that the resistance value of the resistor structure is adjusted, and the adjusted resistance value meets the use requirement under the condition of determining the resistance size.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the structures shown in these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a resistor structure according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a resistor structure according to a second embodiment of the present invention;
FIG. 3 is a top view of a second embodiment of a resistor structure according to the present invention;
FIG. 4 is a schematic diagram of a third embodiment of a resistor structure according to the present invention;
FIG. 5 is a schematic flow chart of a first embodiment of a method for fabricating a resistor structure according to the present invention;
FIG. 6 is a flow chart of a second embodiment of the method for fabricating a resistor structure according to the present invention.
Reference numerals illustrate:
the achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present invention are merely used to explain the relative positional relationship, movement, etc. between the components in a particular posture (as shown in the drawings), and if the particular posture is changed, the directional indicator is changed accordingly.
Furthermore, the description of "first," "second," etc. in this disclosure is for descriptive purposes only and is not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions of the embodiments may be combined with each other, but it is necessary to base that the technical solutions can be realized by those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the technical solutions should be considered that the combination does not exist and is not within the scope of protection claimed by the present invention.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a first embodiment of a resistor structure according to the present invention. A first embodiment of the resistor structure of the present invention is presented based on fig. 1.
In this embodiment, the resistor structure includes: a substrate 1;
a metal layer 3 disposed on the substrate 1, wherein an electrode region, a non-electrode region, and an isolation region disposed between the electrode region and the non-electrode region are disposed on the metal layer 3;
the non-electrode area is provided with a resistance adjusting layer 4 for adjusting the resistivity of the resistance structure;
an electrode layer 5 is arranged in the electrode region;
a first insulating layer 6 is arranged in the isolation region;
and a second insulating layer 7 is arranged on the resistance adjusting layer.
It will be appreciated that the substrate 1 is the bottom for carrying the entire resistive structure. The substrate 1 may be composed of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, such as a ceramic substrate, a glass fiber plate, or the like.
It will be appreciated that the resistive structure further comprises a contact layer 2 arranged on the substrate 1, the metal layer 3 being arranged on the contact layer 2. The contact layer 2 may be used to fix the metal layer 3 on the substrate 1, and in the case that the contact layer 2 is not provided, the metal layer 3 may not be directly provided on the substrate 1 due to poor bonding force between the constituent materials of the substrate 1 and the constituent materials of the metal layer 3, and in this case, the contact layer 2 may be provided between the substrate 1 and the metal layer 3, thereby improving adhesion between the substrate 1 and the metal layer 3. For example, when it is desired to place metal on a glass plate, a quantity of glue may be used, which is the contact layer between the metal and the glass plate. The contact layer 2 can be made of epoxy or subcritical materials, and the like, so that the metal layer 3 and the substrate 1 can be better adhered. The metal layer 3 is a conductive structure layer, and the specific resistance value of the resistor structure is directly related to the size and the constituent materials of the metal layer 3. The material constituting the metal layer 3 has a certain resistivity, so that the resistive structure exhibits resistivity. The metal layer 3 may be composed of a pure metal or a metal alloy, for example, a pure metal material such as copper, silver, gold, or an alloy of materials including copper, silver, manganese, tin, or the like.
The resistance value adjusting layer 4 is a structure for adjusting the resistance value of the resistive structure. The resistance adjusting layer 4 may be a structure composed of a material having a resistivity different from that of the metal layer 3. The specific material used for the resistance adjusting layer 4 needs to be determined according to how the resistance of the resistor structure is adjusted. When the resistance value needs to be reduced, the resistance value adjusting layer 4 needs to be formed by selecting a material having a resistivity equal to or lower than that of the material of the metal layer 3, and for example, a metal material or alloy having a low resistivity, such as copper, silver, or gold, may be selected. In the case where the resistivity of the resistance adjusting layer 4 is low, the overall resistivity of the conductive structure metal layer 3 and the resistance adjusting layer 4 in the resistive structure is lowered, so that the resistance of the resistive structure is reduced. In addition, when the same material is used for the resistance adjusting layer 4 and the metal layer 3, the cross-sectional area of the whole conductive structure formed by the metal layer 3 and the resistance adjusting layer 4 is increased, and at this time, the resistance of the resistive structure can be reduced as well. In the case that the resistance of the resistive structure needs to be improved, a material with a higher resistivity may be selected to make the resistance adjusting layer 4, where the resistivity of the resistance adjusting layer 4 is greater than that of the material of the metal layer 3, for example, an ITO material. In addition, when the specific resistance value is adjusted, the adjustable resistance value can be determined according to the conductivity of the material of the resistance value adjusting layer 4 and the size information corresponding to the resistance value adjusting layer 4. The resistance adjusting layer 4 and the electrode layer 5 need to be arranged at a certain distance, and the interval area can be in the range of 20-50 micrometers when the specific arrangement is performed.
It is understood that the electrode layer 5 is a structure for connecting the metal layer 3 with an external element. The electrode layer 5 may be disposed in the electrode region by means of a plating. The electrode layer 5 may be composed of a pure metal material or an alloy material, and the constituent material of the electrode layer 5 may be the same as that of the metal layer 3. The electrode region can be divided into two parts which are respectively arranged at two ends of the metal layer 3, and the two ends of the metal layer 3 are respectively led out through different electrode layers 5. In addition, in the present embodiment, a plurality of electrode layers may be disposed in the electrode region of the metal layer 3, for example, two electrode layers may be disposed at one end, forming a four-electrode structure.
In this embodiment, a first insulating layer 6 is further disposed on the metal layer 3, and the first insulating layer 6 is located in a spacer between the resistance adjusting layer 4 and the electrode layer 5.
It should be understood that, in the resistor structure setting process, the material of the resistor value adjusting layer 4 is a conductive material, if there is contact between the resistor value adjusting layer 4 and the electrode layer 5, the current flowing in the resistor structure can flow out through the resistor value adjusting layer 4 and the electrode layer 5 that are in contact with each other, at this time, the resistor value adjusting layer 4 and the electrode layer 5 default to be resistor leads, so as to affect the resistor value of the whole resistor structure. Therefore, the first insulating layer 6 is provided in the spacer between the resistance adjusting layer 4 and the electrode layer 5 in the resistive structure. The first insulating layer 6 is only used to isolate the resistance adjusting layer 4 from the electrode layer 5, so the first insulating layer 6 may be made of an insulating material.
In addition, in order to prevent the material of the resistance adjusting layer 4 from being influenced by the gas in the external environment, which leads to a change in the resistance value of the resistance structure, it is also necessary to provide a second insulating layer 7 on the upper surface of the resistance adjusting layer 4. The second insulating layer 7 can effectively isolate the metal layer 3 from the resistance adjusting layer 4 and the external environment, so that the metal layer 3 and the resistance adjusting layer 4 are prevented from being influenced by the external environment, and the metal layer 3 and the resistance adjusting layer 4 are protected. The first insulating layer 6 and the second insulating layer 7 may be made of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, where the organic material may be solder mask ink, the inorganic material may be silicon dioxide, gallium nitride, aluminum nitride, or the like, and the mixed material may be an organic material and an inorganic material that are stacked, for example, a layer of silicon dioxide is disposed on the solder mask ink, or a layer of solder mask ink is disposed on the silicon dioxide. When specifically provided, the second insulating layer 7 should cover all exposed areas on the resistance adjusting layer 4 and the metal layer 3, including the upper area of the isolation region. When the resistance adjusting layer 4 is made of a material having a high resistance to water and oxygen, such as an ITO material, the second insulating layer 7 may be omitted, and finally, a related protective structure may be provided on the entire structure. In order to avoid the influence of the subsequent process of plating the electrode layer 5 on the resistivity of the resistance adjusting layer 4 when the resistance adjusting layer 4 is made of a material having a low resistivity, a second insulating layer 7 should be provided to cover the resistance adjusting layer 4 and all exposed areas on the metal layer 3 before the electrode layer 5 is subjected to the plating.
Because the material of the resistance adjusting layer 4 has a certain resistivity, the resistance adjusting layer 4 needs to be protected when the electrode layer 5 is hung, therefore, in the manufacturing process of the resistor structure, the electrode layer 5 needs to be hung after the first insulating layer 6 and the second insulating layer 7 are arranged, the first insulating layer 6 is arranged in an isolation area, then the resistance adjusting layer 4 is arranged, and after the setting of the resistance adjusting layer 4 is completed, the second insulating layer 7 is arranged on the resistance adjusting layer 4. Of course, after determining the position of the non-electrode region of the resistance adjusting layer 4, the resistance adjusting layer 4 may be disposed in the fixed position of the non-electrode region, then the second insulating layer 7 and the first insulating layer 6 may be disposed, and finally the plating of the electrode layer 5 may be performed.
The present embodiment provides a resistor structure including: a substrate; the metal layer is arranged on the substrate, and an electrode area and a non-electrode area are arranged on the metal layer; the non-electrode area is provided with a resistance adjusting layer for adjusting the resistivity of the resistance structure; an electrode layer is arranged in the electrode region, and a first insulating layer is arranged in the isolation region; and a second insulating layer is arranged on the resistance adjusting layer. In the embodiment, the resistance value adjusting layer is arranged on the metal layer to adjust the overall resistivity of the resistor interface, so that the resistance value of the resistor structure is adjusted, and the resistance value of the resistor after adjustment meets the use requirement under the condition of determining the resistor size.
Referring to fig. 2 and 3, fig. 2 is a schematic structural diagram of a second embodiment of a resistor structure according to the present invention; fig. 3 is a top view of a second embodiment of a resistor structure according to the present invention. A second embodiment of the resistor structure of the present invention is presented based on the first embodiment of the resistor structure described above.
In this embodiment, the electrode layer 5 includes: a first metallization region and a second metallization region;
the electrode region comprises a first electrode region and a second electrode region which are respectively arranged at two ends of the metal layer;
the first metal hanging area is arranged in the first electrode area, and the second metal hanging area is arranged in the second electrode area.
It will be appreciated that during the resistor structure setup process, two electrode leads need to be provided to connect the two ends of the resistor with external devices, respectively. Therefore, in the case of the plating electrode layer 5, two plating metal layers are required, that is, the electrode layer includes two plating metal layers. The plating metal layer is a metal layer arranged in the electrode area of the metal layer 3 in a plating manner. The metallization layer may be connected to other components via wires. Similarly, two electrode regions, namely a first electrode region and a second electrode region, should be included on the metal layer 3, wherein a plating metal layer can be hung in each of the first electrode region and the second electrode region.
The first electrode area and the second electrode area should be respectively disposed at two ends of the metal layer 3, that is, contact between the electrode layer 5 in the electrode area and the resistance adjusting layer 4 may be avoided, and the resistivity of the whole metal layer 3 may be collected, so as to avoid false detection of the resistance value of the resistance structure. The resistance value acquired by the electrode layer 5 is the resistance value on the metal layer 3 between the two electrode layers, and in the case where the electrode layer 5 is not located at both ends of the metal layer 3, the detected resistance value is not the actual resistance value of the entire metal layer 3.
Further, in the present embodiment, the thickness of the electrode layer 5 is larger than the thicknesses of the resistance adjusting layer 4 and the second insulating layer 7.
It will be appreciated that during the resistive structure placement process, the electrode layer 5 needs to be led out to connect the resistive structure with other components. Therefore, the thickness of the electrode layer 5 provided on the metal layer 3 should be appropriately larger than the sum of the thicknesses of the resistance adjusting layer 4 and the second insulating layer 7, so that the electrode layer 5 is provided to protrude on the resistive structure.
In this embodiment, the first and second metallization layers each include: a copper layer Cu of a first preset thickness;
a nickel layer Ni with a second preset thickness arranged on the copper layer Cu;
and a tin layer Sn of a third preset thickness arranged on the nickel layer Ni.
It will be appreciated that copper layers Cu of greater thickness may be provided when current is to be drawn through the metal layer 3, as copper has good conductivity. The first preset thickness is a preset thickness of the copper layer Cu, and the thickness of the copper layer Cu may be the same as the thickness of the resistance adjusting layer 4. The tin layer Sn is a material layer arranged on the uppermost layer of the metallization layer. Because the tin material has a certain oxidation resistance, the tin layer Sn is directly exposed in the external environment, and the external environment does not influence the structure of the hung metal layer. The third preset thickness is a preset thickness of the tin layer Sn, and when the tin layer Sn is specifically set, the thickness of the tin layer Sn only needs to meet the requirement of abrasion, so that the third preset thickness of the tin layer Sn can be far smaller than the first preset thickness of the copper layer Cu.
It should be noted that, in this embodiment, the tin layer Sn may also be directly disposed on the copper layer Cu, and because of the larger material difference between tin and copper, the adhesion between tin and copper is poor, which may result in inaccurate detection according to the resistance value of the resistor structure, and may also result in a problem of the power coefficient of resistance. Therefore, in practical application, a nickel layer Ni can be arranged between a copper layer Cu and a tin layer Sn, and the nickel layer Ni can better adhere the copper layer Cu and the tin layer Sn together, and can also avoid the problem of the resistance power coefficient generated in the metal plating layer.
It will be appreciated that the second predetermined thickness is a predetermined thickness of the nickel layer Ni, and since the nickel layer Ni plays a role in better adhesion between the copper layer Cu and the tin layer Sn, a thicker nickel layer Ni is not required, and the second predetermined thickness of the nickel layer Ni may be smaller than the third predetermined thickness of the tin layer Sn. For example, the thicknesses of the copper layer Cu and the resistance adjusting layer 4 may be set to 80 μm, and the thickness of the nickel layer Ni may be 5 μm and the thickness of the tin layer Sn may be 10 μm.
Further, the thickness of the resistance adjusting layer 4 may be the same as the thickness of the copper layer Cu. The thickness of the second insulating layer 7 may be the same as the sum of the thicknesses of the tin layer Sn and the nickel layer Ni. In the manufacturing process of the resistor structure, the electrode layer 5, the resistance adjusting layer 4, the first insulating layer 6 and the second insulating layer 7 are all necessary structures. Wherein the electrode layer 5 is disposed in an electrode region on the metal layer 3, and the resistance adjusting layer 4 and the second insulating layer 7 are sequentially disposed in a non-electrode region of the metal layer 3. Setting the sum of the thicknesses of the resistance adjusting layer 4 and the second insulating layer 7 to be the same as the thickness of the electrode layer 5 can improve other properties of the resistive structure while reducing the thickness of the resistive structure. For example, in the case that the thickness of the electrode layer 5 is larger than the sum of the resistance value adjusting layer 4 and the second insulating layer 7, the thickness of the second insulating layer 7 can be increased, so that the protection of the metal layer 3 and the resistance value adjusting layer 4 is further enhanced under the condition that the whole thickness of the resistance structure is not changed; in the case where the thickness of the electrode layer 5 is smaller than the sum of the thicknesses of the resistance adjusting layer 4 and the second insulating layer 7, the thickness of the copper layer Cu in the electrode layer 5 can be appropriately adjusted, and the stability in measurement of the resistance structure can be increased.
Referring to fig. 4, fig. 4 is a schematic structural diagram of a third embodiment of a resistor structure according to the present invention. A fourth embodiment of the resistor structure of the present invention is presented based on the above-described third embodiment.
In this embodiment, when the resistance needs to be reduced, the second insulating layer 7 and the first insulating layer 6 may be simultaneously disposed on the resistance adjusting layer 4 and in the isolation region.
It should be understood that, when the resistance value needs to be reduced, the material of the resistance value adjusting layer 4 is mainly a material with a resistance lower than that of the metal layer 3, and the hung electrode layer 5 is also a material with a lower resistance value, so that a part of the material of the electrode layer 5 is hung on the resistance value adjusting layer 4 in the hanging plating process of the electrode layer 5 to affect the overall resistance value of the resistance structure. Of course, the material used for the first insulating layer 6 may be the same as that for the second insulating layer 7, and both may be provided as a whole during the arrangement to form a complete insulating layer 8.
In the manufacturing process of the resistor structure, the second insulating layer 7 and the first insulating layer 6 are respectively and correspondingly arranged on the resistance adjusting layer 4 and in the isolation region, after the resistance adjusting layer 4 is completely protected, the electrode layer 5 is subjected to plating in the electrode region on the metal layer 3. For example, when the resistor structure is manufactured, a complete insulating layer 8 can be directly arranged in the isolation region and on the resistance adjusting layer 4 by using the anti-welding ink, then the electrode layer 5 is hung in the electrode region on the metal layer 3, and due to the protection of the insulating layer 8, the material of the electrode layer 5 can not be hung on the resistance adjusting layer 4 in the process of hanging the electrode layer 5, so that the influence of the electrode layer 5 on the resistance adjusting layer 4 is effectively avoided.
In addition, in order to achieve the above objective, the present invention further provides a manufacturing method of the resistor structure, referring to fig. 4, fig. 4 is a schematic flow chart of a first embodiment of the manufacturing method of the resistor structure of the present invention. A first embodiment of the method for fabricating a resistor structure according to the present invention is presented based on fig. 4.
In this embodiment, the method for manufacturing a resistor structure includes:
step S10: a substrate is obtained.
It is understood that the substrate is the bottom for carrying the entire resistive structure. The substrate may be composed of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, such as a ceramic substrate, a glass fiber board, or the like.
Step S20: a metal layer is disposed on the substrate.
It should be noted that the metal layer is a conductive structure layer, and the specific resistance value of the resistor structure is directly related to the size and the constituent materials of the metal layer. The material comprising the metal layer has a resistivity such that the resistive structure exhibits resistivity. The metal layer may be composed of a pure metal or metal alloy, such as a pure metal material of copper, silver, or the like, or an alloy of materials including copper, silver, manganese, tin, or the like.
It should be noted that, the contact layer may be used to fix the metal layer on the substrate, and in the case that the contact layer is not provided, the metal layer may not be directly provided on the substrate due to poor bonding force between the constituent materials of the substrate and the constituent materials of the metal layer, and at this time, the contact layer may be provided between the substrate and the metal layer, so as to improve adhesion between the substrate and the metal layer. For example, when it is desired to place metal on a glass plate, a quantity of glue may be used, which is the contact layer between the metal and the glass plate. The contact layer can be made of epoxy or subcritical materials, and the metal layer and the substrate can be better adhered.
In a specific implementation, considering the adhesion between the substrate and the metal layer and the power coefficient of the resistor, after the substrate is set, a connection layer may be disposed on the substrate, and then a corresponding metal layer may be disposed on the connection layer.
Step S30: and a first insulating layer is arranged in the isolation region on the metal layer, and a resistance adjusting layer is arranged in the non-electrode region.
It is understood that the resistance value adjusting layer is a structure for adjusting the resistance value of the resistive structure. The resistance adjusting layer may be a structure composed of a material having a resistivity different from that of the material of the metal layer. The specific material used for the resistance adjusting layer needs to be determined according to how the resistance of the resistance structure is adjusted. When the resistance value needs to be reduced, it is necessary to select a material having a resistivity equal to or lower than that of the material of the metal layer to form the resistance value adjusting layer, and for example, a metal material or alloy having good conductivity such as copper, silver, gold, or the like and low resistivity may be selected. Under the condition that the resistivity of the resistance adjusting layer is low, the overall resistivity of the conductive structure metal layer and the resistance adjusting layer in the resistance structure is reduced, so that the resistance of the resistance structure is reduced.
In addition, when the same material is adopted for the resistance adjusting layer and the metal layer, the cross section area of the whole conductive structure formed by the metal layer and the resistance adjusting layer is increased, and at the moment, the resistance of the resistance structure can be reduced. Under the condition that the resistance of the resistance structure needs to be improved, a material with higher resistivity can be selected to manufacture the resistance adjusting layer, and the resistivity of the resistance adjusting layer is larger than that of the metal layer material, for example, the ITO material. In addition, when the specific resistance value is adjusted, the adjustable resistance value can be determined according to the conductivity of the material of the resistance value adjusting layer and the size information corresponding to the resistance value adjusting layer.
When the first insulating layer and the resistance adjusting layer are disposed on the metal layer, the first insulating layer may be disposed in the isolation region, and then the resistance adjusting layer may be disposed in the non-electrode region isolated by the first insulating layer by means of plating or sputtering. When the resistance adjusting layer is made of a metal material or an alloy material with lower resistivity, the resistance adjusting layer can be arranged on the metal layer in a hanging plating mode; when the resistance adjusting layer is made of ITO material with higher resistivity, the resistance adjusting layer can be arranged on the metal layer in a sputtering mode. In addition, when the material of the resistance adjusting layer is a metal material or an alloy material with lower resistivity, the resistance adjusting layer can be arranged on the metal layer in a vapor deposition mode. Of course, when determining the specific position of the resistance value adjusting layer, the resistance value adjusting layer can be directly arranged at the determined position, namely in the non-electrode area, so that the material of the resistance value adjusting layer is prevented from being attached to the electrode area or the isolation area, and then the first insulating layer is arranged in the isolation area.
Step S40: and a second insulating layer is arranged on the resistance adjusting layer.
It is understood that in order to prevent the influence of the gas in the external environment on the structure of the metal layer from causing the change of the resistance value of the resistive structure, it is also necessary to provide a second insulating layer on the upper surface of the non-electrode region on the resistance value adjusting layer. The second insulating layer can effectively isolate the resistance adjusting layer from external environment, so that the resistance adjusting layer is prevented from being influenced by external environment, and the resistance adjusting layer is protected. The second insulating layer may be composed of an organic material, an inorganic material, or a mixed material of an organic material and an inorganic material, such as a solder resist ink. When the second insulating layer is provided, the first insulating layer may be provided at the same time.
Step S50: and plating an electrode layer in the electrode area on the metal layer.
It should be understood that the electrode layer is a lead layer for connecting the metal layer with the external connection element. The electrode layer may be disposed in the electrode region by means of a plating. The electrode layer may be composed of a pure metal material or an alloy material, and the constituent material of the electrode layer may be the same as the constituent material of the metal layer. The electrode layer may include a copper layer, a nickel layer, and a tin layer.
In a specific setting process, the electrode layer can be set in the electrode area on the metal layer in a hanging plating mode. For example, a copper layer with a first preset thickness can be firstly hung on the electrode area, then a nickel layer with a second preset thickness is hung on the copper layer, and finally a tin layer with a third preset thickness is hung on the nickel layer to finish the hanging plating of the whole electrode layer.
The embodiment provides a method for manufacturing a resistor structure, which comprises the following steps: obtaining a substrate; providing a metal layer on the substrate; setting a resistance adjusting layer in a non-electrode area on the metal layer; plating an electrode layer in an electrode area on the metal layer; and a second insulating layer is arranged on the resistance adjusting layer. In the embodiment, the resistance value adjusting layer is arranged on the metal layer to adjust the overall resistivity of the resistor interface, so that the resistance value of the resistor structure is adjusted, and the resistance value of the resistor after adjustment meets the use requirement under the condition of determining the resistor size.
Referring to fig. 5, fig. 5 is a flow chart of a second embodiment of the method for manufacturing a resistor structure according to the present invention. A second embodiment of the resistor structure manufacturing method of the present invention is proposed based on the first embodiment of the resistor structure manufacturing method described above.
In this embodiment, the step of disposing the resistance adjustment layer in the non-metal region in the step S30 may include:
step S301: the resistance adjustment requirements of the resistive structure and the resistivity of the metal layer are determined.
It should be understood that the resistance adjustment requirement is required to adjust the resistance value in the current application scenario. The resistance adjustment requirement comprises a resistance requirement for reducing the resistance of the resistor structure and a resistance requirement for improving the resistance of the resistor structure. Before the resistance adjusting layer is arranged in the resistor structure, the material of the resistance adjusting layer is required to be selected. The resistance adjustment of the resistor structure is selected based on the resistivity of the metal layer material. Therefore, the resistance value adjustment requirement in the current application scenario and the resistivity of the metal layer in the resistance structure need to be determined before the resistance value adjustment layer is set.
Step S302: and selecting a resistance value adjusting layer material according to the resistance value adjusting requirement and the resistivity of the metal layer.
It should be noted that, when the resistance adjustment requirement and the resistivity of the metal layer have been determined, the resistivity of the metal layer is taken as a selection criterion, and the material of the resistance adjustment layer is selected according to the resistance adjustment requirement. When the resistance adjustment requirement is to reduce the resistance of the resistance structure, selecting a material with resistivity smaller than or equal to that of the metal layer as a material of the resistance adjustment layer, such as copper, gold, silver and the like; when the resistance adjustment requirement is to increase the resistance of the resistor structure, a material with the resistivity larger than that of the metal layer is selected as a material of the resistance adjustment layer, such as an ITO material.
Step S303: and setting a resistance adjusting layer in a non-electrode area on the metal layer by using the selected resistance adjusting layer material.
It will be appreciated that in the case of a defined resistance value adjusting layer material, a certain resistance value adjusting layer material may be provided directly in the non-electrode region on the metal layer. The specific setting mode can be selected according to the specific material of the resistance value adjusting layer, for example, when the material of the resistance value adjusting layer is copper, gold, silver and other materials, the resistance value adjusting layer can be directly arranged in the non-electrode area on the metal layer in a sputtering or hanging plating mode; when the resistance adjusting layer is made of ITO material, the ITO material can be arranged in the non-electrode area of the metal layer in a sputtering mode. In addition, when the resistance adjusting layer is made of copper, gold, silver and other materials, the resistance adjusting layer and the electrode layer may be made of the same material, and at this time, in the manufacturing process of the resistor structure, the electrode layer and the resistance adjusting layer may be simultaneously subjected to plating at the corresponding positions, so as to avoid repeated operations.
In addition, in this embodiment, before the second insulating layer is disposed, a first insulating layer is further disposed in the isolation region between the resistance adjusting layer and the electrode layer, and of course, in a specific implementation process, the isolation region may be determined first, then the first insulating layer is disposed in the isolation region, then the second insulating layer is disposed on the first insulating layer and the resistance adjusting layer, and finally the electrode layer is hung in the electrode region of the metal layer.
The foregoing description is only of the preferred embodiments of the present invention, and is not intended to limit the scope of the invention, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.
Claims (8)
1. A resistor structure, the resistor structure comprising:
a substrate;
the metal layer is arranged on the substrate, and an electrode region, a non-electrode region and an isolation region arranged between the electrode region and the non-electrode region are arranged on the metal layer;
the non-electrode area is provided with a resistance adjusting layer for adjusting the resistivity of the resistance structure under the condition of determining the resistance size;
an electrode layer is arranged in the electrode region;
a first insulating layer is arranged in the isolation region;
a second insulating layer is arranged on the resistance adjusting layer;
the first insulating layer and the second insulating layer are used for protecting the resistance adjusting layer when the electrode layer is hung and plated;
the electrode layer includes: a first metallization region and a second metallization region;
the electrode region comprises a first electrode region and a second electrode region which are respectively arranged at two ends of the metal layer;
the first metal hanging area is arranged in the first electrode area, and the second metal hanging area is arranged in the second electrode area;
the first and second metallization regions each comprise: a copper layer of a first predetermined thickness;
the nickel layer is arranged on the copper layer and has a second preset thickness;
and a tin layer with a third preset thickness arranged on the nickel layer.
2. The resistive structure of claim 1, wherein the resistivity of the resistance adjustment layer is less than or equal to the resistivity of the metal layer when the resistance of the resistive structure is desired to be reduced.
3. The resistive structure of claim 1, wherein the resistivity of the resistance adjustment layer is greater than the resistivity of the metal layer when an increase in the resistance of the resistive structure is desired.
4. The resistive structure of claim 1, further comprising a contact layer disposed on the substrate, the metal layer disposed on the contact layer.
5. The resistive structure of claim 1, wherein the first insulating layer and the second insulating layer are comprised of an organic material, an inorganic material, or a combination of organic and inorganic materials.
6. A method of fabricating a resistive structure based on the resistive structure of any one of claims 1-5, the method comprising:
obtaining a substrate;
providing a metal layer on the substrate;
a first insulating layer is arranged in an isolation region on the metal layer, and a resistance adjusting layer is arranged in a non-electrode region; the resistance adjusting layer is used for adjusting the resistivity of the resistance structure under the condition of determining the resistance size;
a second insulating layer is arranged on the resistance adjusting layer;
plating an electrode layer in an electrode area on the metal layer;
the first insulating layer and the second insulating layer are used for protecting the resistance adjusting layer when the electrode layer is hung and plated;
the electrode layer includes: a first metallization region and a second metallization region;
the electrode region comprises a first electrode region and a second electrode region which are respectively arranged at two ends of the metal layer;
the first metal hanging area is arranged in the first electrode area, and the second metal hanging area is arranged in the second electrode area;
the step of plating the electrode layer in the electrode area on the metal layer comprises the following steps:
plating copper layers with a first preset thickness in the first electrode region and the second electrode region of the electrode region;
a nickel layer with a second preset thickness is hung on the copper layer;
and plating tin with a third preset thickness on the nickel layer to form an electrode layer.
7. The method of manufacturing a resistor structure of claim 6, wherein the step of disposing a resistance value adjusting layer in the non-electrode region comprises:
determining resistance adjustment requirements of the resistive structure and resistivity of the metal layer;
selecting a resistance value adjusting layer material according to the resistance value adjusting requirement and the resistivity of the metal layer;
and setting a resistance adjusting layer in a non-electrode area on the metal layer by using the selected resistance adjusting layer material.
8. The method of manufacturing a resistor structure according to claim 7, wherein the step of selecting the resistance value adjusting layer material according to the resistance value adjusting requirement and the metal layer material comprises;
when the resistance adjustment requirement is to reduce the resistance of the resistance structure, selecting a material with resistivity smaller than or equal to that of the metal layer as a resistance adjustment layer material;
when the resistance adjustment requirement is to improve the resistance of the resistance structure, selecting a material with the resistivity larger than that of the metal layer as a material of the resistance adjustment layer.
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| CN202210887588.1A CN115148434B (en) | 2022-07-26 | 2022-07-26 | Resistor structure and manufacturing method thereof |
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| TWI264737B (en) * | 2005-01-10 | 2006-10-21 | Prosperity Dielectrics Co Ltd | High-power chip resistor structure with dual-layer resistance |
| CN1945764A (en) * | 2005-10-07 | 2007-04-11 | E.I.内穆尔杜邦公司 | Trimmable resistor and method of manufacture thereof |
| JP2013089655A (en) * | 2011-10-14 | 2013-05-13 | Panasonic Corp | Method for manufacturing chip resistor |
| CN113113199B (en) * | 2021-04-14 | 2022-09-06 | 南京萨特科技发展有限公司 | High-power alloy foil resistor and manufacturing method thereof |
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