CN115142019A - Cutter for shield machine and preparation method thereof - Google Patents
Cutter for shield machine and preparation method thereof Download PDFInfo
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- CN115142019A CN115142019A CN202210813148.1A CN202210813148A CN115142019A CN 115142019 A CN115142019 A CN 115142019A CN 202210813148 A CN202210813148 A CN 202210813148A CN 115142019 A CN115142019 A CN 115142019A
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- 238000002360 preparation method Methods 0.000 title description 6
- 238000000151 deposition Methods 0.000 claims description 39
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 230000008021 deposition Effects 0.000 claims description 27
- 230000005641 tunneling Effects 0.000 claims description 20
- 238000007733 ion plating Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 238000000576 coating method Methods 0.000 abstract description 39
- 239000011248 coating agent Substances 0.000 abstract description 38
- 238000003754 machining Methods 0.000 abstract description 6
- 238000010891 electric arc Methods 0.000 description 12
- 229910008484 TiSi Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000003344 environmental pollutant Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 231100000719 pollutant Toxicity 0.000 description 6
- 238000005422 blasting Methods 0.000 description 5
- 239000004576 sand Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 238000009412 basement excavation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000001351 cycling effect Effects 0.000 description 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 2
- 238000004372 laser cladding Methods 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0664—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21D—SHAFTS; TUNNELS; GALLERIES; LARGE UNDERGROUND CHAMBERS
- E21D9/00—Tunnels or galleries, with or without linings; Methods or apparatus for making thereof; Layout of tunnels or galleries
- E21D9/06—Making by using a driving shield, i.e. advanced by pushing means bearing against the already placed lining
- E21D9/08—Making by using a driving shield, i.e. advanced by pushing means bearing against the already placed lining with additional boring or cutting means other than the conventional cutting edge of the shield
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mining & Mineral Resources (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Geology (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
Abstract
The invention relates to a cutter for a shield machine, which comprises: a cutter body; a metallic bonding layer formed on the surface of the tool body; a CrAlN support layer formed on a surface of the metallic bonding layer; and the alternating layers are formed on the surface of the CrAlN support layer and comprise a plurality of CrAlN layers and TiSiCN layers which are alternately arranged. The invention effectively solves the problems of low bonding strength and low hardness of the traditional cutter coating and the cutter body, enables the cutter to have the characteristics of high hardness, strong bonding, low friction and high wear resistance by improving the coating structure of the cutter, obviously prolongs the service life of the cutter and improves the machining efficiency of the shield.
Description
Technical Field
The invention relates to the technical field of equipment manufacturing, in particular to a cutter for a shield machine and a preparation method thereof.
Background
In recent years, a shield machine is widely applied to urban tunnel excavation, a cutter of the shield machine is used as a key part in the excavation process, plays a role of propelling a front in construction, is severe in working environment, unstable in load and large in load impact, and is one of the most vulnerable parts in the excavation process.
The loss and the service life of the cutter directly influence the construction efficiency and the quality of the cutter, directly influence the machining efficiency and the machining cost, and simultaneously influence the use environment of the whole machine, the machinable geological range and the like.
Most of the wear-resistant coatings for shield machines at present are prepared by adopting technologies such as laser cladding, plasma surfacing, chemical vapor deposition and the like, wherein the laser cladding technology has extremely high cooling speed, and is easy to generate larger residual stress in the coating, so that the bonding strength between the coating and a cutter matrix is reduced due to cracking of the coating; the wear-resistant coating prepared by the plasma surfacing method has high thermal stress caused by high surfacing heat output, and is easy to generate cracks, so that the coating is cracked or falls off in the working process; the preparation temperature of the chemical vapor deposition technology is higher (not less than 1000 ℃), the selection of the cutter substrate is limited, element diffusion between the substrate and the coating can be caused at higher temperature to influence the performance of the coating, the tensile stress generated by the growth of the coating seriously influences the bonding strength of the coating, the hardness of the coating is lower, and the coating with the thickness of hundreds of micrometers or even more is usually required for ensuring the wear resistance.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, provides a cutter for a shield tunneling machine, solves the problems of low bonding strength and low hardness of the traditional cutter coating and the cutter body, enables the cutter to have the characteristics of high hardness, strong bonding, low friction and high wear resistance by improving the coating structure of the cutter, obviously prolongs the service life of the cutter, and improves the machining efficiency of the shield tunneling machine.
The technical scheme for realizing the purpose is as follows:
the invention provides a cutter for a shield machine, which comprises:
a cutter body;
a metallic bonding layer formed on a surface of the cutter body;
a CrAlN support layer formed on a surface of the metal bonding layer; and
and the alternating layers comprise a plurality of CrAlN layers and TiSiCN layers which are alternately arranged.
According to the invention, a cutter for a shield machine is adopted, a metal bonding layer is formed on the surface of the cutter body through electroplating, a CrAlN supporting layer is further formed, and a plurality of CrAlN layers and TiSiCN layers which are alternately arranged are formed on the CrAlN supporting layer through electroplating, wherein the TiSiCN layers in the alternating layers can maintain ultrahigh hardness due to the fact that the TiSiCN layers have a nano composite structure, the friction coefficient of the coating is effectively reduced due to the existence of C elements, the residual stress of the coating can be effectively improved by inserting the CrAlN layers, the bonding strength of the TiSiCN layers is improved, the CrAlN has excellent oxidation resistance, the temperature resistance of the coating can be improved, the problems of low bonding strength and low hardness of the traditional cutter coating and the cutter body are solved, the cutter has the characteristics of high hardness, strong bonding, low friction and high wear resistance by improving the coating structure of the cutter, the service life of the cutter is obviously prolonged, and the machining efficiency of the shield machine is improved.
The further improvement of the cutter for the shield machine is that the sum of the thicknesses of a CrAlN layer and a TiSiCN layer is 1-5 mu m.
The further improvement of the cutter for the shield machine is that the thickness ratio of the CrAlN layer to the TiSiCN layer is 1.
The further improvement of the cutter for the shield machine is that the CrAlN layer is provided with 4-40 layers, and the TiSiCN layer is correspondingly provided with 4-40 layers.
The further improvement of the cutter for the shield machine is that the sum of the thicknesses of a CrAlN layer and a TiSiCN layer is 1-3 mu m.
The further improvement of the cutter for the shield machine is that the thickness ratio of the CrAlN layer to the TiSiCN layer is 1 to 1.
The further improvement of the cutter for the shield machine is that the CrAlN layer is provided with 30-50 layers, and the TiSiCN layer is correspondingly provided with 30-50 layers.
The further improvement of the cutter for the shield machine is that the CrAlN layer comprises the following elements in atomic percentage: 15-25 at.% of Al, 20-40 at.% of Cr and 45-55 at.% of N;
the atomic percentage of each element in the TiSiCN layer is as follows: 35 to 45at.% of Ti, 5 to 15at.% of Si, 10 to 20at.% of C and 25 to 40at.% of N.
The further improvement of the cutter for the shield machine is that the thickness of the metal bonding layer is 0.2-1.0 mu m, the thickness of the CrAlN supporting layer is 1-5 mu m, and the thickness of the alternating layer is 20-40 mu m.
The invention provides a method for preparing a cutter for a shield tunneling machine, which comprises the following steps:
providing the cutter body, and pretreating the cutter body;
forming a metal bonding layer on the surface of the cutter body through arc ion plating deposition;
forming a CrAlN supporting layer on the surface of the metal bonding layer through arc ion plating deposition;
and forming a plurality of alternately arranged CrAlN layers and TiSiCN layers on the surface of the CrAlN supporting layer through arc ion plating deposition, and combining the CrAlN layers and the TiSiCN layers to form alternate layers.
Drawings
Fig. 1 is a side sectional view of a cutter for a shield tunneling machine according to the present invention.
Fig. 2 is a graph of coefficient of friction versus sliding distance for a coating in an embodiment of a cutter for a shield tunneling machine according to the present invention.
Fig. 3 is a graph of wear depth versus wear width for an embodiment of a cutter for a shield tunneling machine according to the present invention.
Detailed Description
The invention is further described with reference to the following figures and specific examples.
Referring to fig. 1, the invention provides a cutter for a shield machine, wherein a metal bonding layer is formed on the surface of the cutter body by electroplating, a CrAlN supporting layer is further formed, and a plurality of CrAlN layers and TiSiCN layers which are alternately arranged are formed by electroplating on the CrAlN supporting layer, wherein the TiSiCN layers in the alternating layers have a nano composite structure and can maintain ultrahigh hardness, the friction coefficient of the coating is effectively reduced due to the existence of C element, the residual stress of the coating can be effectively improved by inserting the CrAlN layers, the bonding strength of the TiSiCN layers is improved, the CrAlN has excellent oxidation resistance, the temperature resistance of the coating can be improved, the problems of low bonding strength and low hardness of the traditional cutter coating and the cutter body are solved, the cutter has the characteristics of high hardness, strong bonding, low friction and high wear resistance by improving the coating structure of the cutter, the service life of the cutter is obviously prolonged, and the machining efficiency of the shield machine is improved. The cutter for the shield tunneling machine of the invention is described below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a side sectional view of a cutter for a shield tunneling machine according to the present invention. The following describes the cutter for the shield machine according to the present invention with reference to fig. 1.
As shown in fig. 1, the cutter for a shield tunneling machine of the present invention includes:
a blade body 11;
a metallic bonding layer 12 formed on the surface of the tool body 11;
a CrAlN support layer 13 formed on the surface of the metallic bonding layer 12; and
and an alternating layer 14 formed on the surface of the CrAlN support layer 13, wherein the alternating layer 14 includes a plurality of CrAlN layers 141 and TiSiCN layers 142 alternately arranged.
Specifically, the atomic percentages of the elements of the CrAlN layer are as follows: 15-25 at.% of Al, 20-40 at.% of Cr and 45-55 at.% of N;
the atomic percentages of the elements in the TiSiCN layer are as follows: ti 35-45 at.%, si 5-15 at.%, C10-20 at.%, and N25-40 at.%.
Preferably, the metal bonding layer has a thickness of 0.2 to 1.0 μm, the CrAlN support layer has a thickness of 1 to 5 μm, and the alternating layers have a thickness of 20 to 40 μm.
In a preferred embodiment of the invention, the sum of the thicknesses of a CrAlN layer and a TiSiCN layer is 1 to 5 μm.
Specifically, the thickness ratio of the CrAlN layer to the TiSiCN layer is 1.
Preferably, the CrAlN layer is provided with 4-40 layers, and the TiSiCN layer is correspondingly provided with 4-40 layers.
In another preferred embodiment of the present invention, the sum of the thicknesses of one CrAlN layer and one TiSiCN layer is 1 to 3 μm.
Specifically, the thickness ratio of the CrAlN layer to the TiSiCN layer is 1.
Preferably, the CrAlN layer is provided with 30 to 50 layers, and the TiSiCN layer is correspondingly provided with 30 to 50 layers.
The specific implementation mode of the cutter for the shield machine is as follows:
example one
The CrAlN layer comprises the following elements in atomic percentage: 15at.% for Al, 40at.% for Cr, and 45at.% for N;
the atomic percentages of the elements in the TiSiCN layer are as follows: ti 35at.%, si 15at.%, C20 at.%, N25 at.%;
the thickness of a metal combination layer is 0.2 mu m, the thickness of a CrAlN support layer is 1 mu m, the total thickness of alternate layers is 20 mu m, the sum of the thicknesses of one CrAlN layer and one TiSiCN layer is 1 mu m, and the thickness ratio of the CrAlN layer to the TiSiCN layer is 1;
pretreating the cutter body, blasting sand to passivate the cutter body, cleaning surface pollutants by ultrasonic waves, drying, putting into a vacuum chamber, and vacuumizing the vacuum chamber at 500 ℃ to ensure that the vacuum degree is higher than 1.0 multiplied by 10 -2 Pa, etching the surface of the cutter body by adopting an ion source;
adjusting bias voltage to-150V, introducing Ar gas, maintaining the gas pressure at 1.0Pa, starting a metal target of an electric arc, wherein the target current of the electric arc target is 160A, and the deposition time is 5min to form a metal bonding layer;
the bias voltage is adjusted to-100V and N is introduced 2 Gas, maintaining the gas pressure at 2.0Pa, starting a CrAl arc target, wherein the target current of the arc target is 200A, and the deposition time is 15min, so as to form a CrAlN supporting layer;
adjusting bias voltage to-70V, starting CrAl arc target with target current of 160A, depositing for 10min to obtain CrAlN layer, introducing C 2 H 2 Adjusting the air pressure to 4.0Pa, starting a TiSi arc target, depositing for 15min to obtain a TiSiCN layer, and alternately circulating for 20 times to form an alternate layer formed by alternately superposing a CrAlN layer and a TiSiCN layer;
and after the deposition is finished, inflating the vacuum chamber and taking out the cutter body when the temperature of the vacuum chamber is reduced to be below 100 ℃.
Example two
The CrAlN layer comprises the following elements in atomic percentage: 20at.% Al, 30at.% Cr and 50at.% N;
the atomic percentages of the elements in the TiSiCN layer are as follows: ti 40at.%, si 10at.%, C15 at.%, N35 at.%;
the thickness of a metal combination layer is 0.5 mu m, the thickness of a CrAlN support layer is 5 mu m, the total thickness of alternate layers is 39 mu m, the sum of the thicknesses of one CrAlN layer and one TiSiCN layer is 3 mu m, and the thickness ratio of the CrAlN layer to the TiSiCN layer is 2;
pretreating the cutter body, blasting sand to passivate the cutter body, cleaning surface pollutants by ultrasonic waves, drying, putting into a vacuum chamber, and vacuumizing the vacuum chamber at 500 ℃ to ensure that the vacuum degree is higher than 1.0 multiplied by 10 -2 Pa, etching the surface of the cutter body by adopting an ion source;
adjusting bias voltage to-100V, introducing Ar gas, maintaining the air pressure at 1.0Pa, starting a metal target of an electric arc, wherein the target current of the electric arc target is 180A, and the deposition time is 10min to form a metal bonding layer;
the bias voltage is adjusted to-100V and N is introduced 2 Maintaining the air pressure at 2.0Pa, starting a CrAl arc target, wherein the target current of the arc target is 200A, and the deposition time is 100min to form a CrAlN supporting layer;
adjusting bias voltage to-70V, starting CrAl arc target with target current of 200A, depositing for 20min to obtain CrAlN layer, introducing C 2 H 2 Adjusting the air pressure to 3.5Pa, starting a TiSi arc target, setting the target current of the arc target to be 200A, and depositing for 30min to obtain a TiSiCN layer; so alternately cycling 13 times to form alternating layers;
after the deposition is finished, the temperature of the vacuum chamber is reduced to be below 100 ℃, the vacuum chamber is inflated and the coating cutter body is taken out;
as shown by combining the graph of FIG. 2 and FIG. 3, the friction coefficient of the coating is about 0.4, which is significantly lower than the friction coefficient of 0.6-0.8 of the traditional nitride coating (TiAlN, crAlN, tiSiN, etc.), the wear depth of the coating is 0-0.2 μm, the wear width is about 0-100 μm, and the wear rate is calculated to be 5.2 × 10 -16 m 3 and/N.m, when the abrasion of the coating is smaller, the coating has good abrasion resistance.
EXAMPLE III
The CrAlN layer comprises the following elements in atomic percentage: 25at.% for Al, 20at.% for Cr, and 55at.% for N;
the atomic percentages of the elements in the TiSiCN layer are as follows: ti 45at.%, si 5at.%, C10 at.%, N40 at.%;
the thickness of a metal bonding layer is 1.0 mu m, the thickness of a CrAlN supporting layer is 3 mu m, the total thickness of alternating layers is 30 mu m, the sum of the thicknesses of one CrAlN layer and one TiSiCN layer is 5 mu m, and the thickness ratio of the CrAlN layer to the TiSiCN layer is 4;
pretreating cutter body, sandblasting and passivating the cutter body, cleaning pollutants on the surface by using ultrasonic waves, drying, putting into a vacuum chamber, vacuumizing the vacuum chamber at 500 ℃ to ensure that the vacuum degree is higher than 1.0 multiplied by 10 -2 Pa, etching the surface of the cutter by adopting an ion source;
adjusting the bias voltage to-100V, introducing Ar gas, maintaining the gas pressure at 1.0Pa, starting the metal target of the electric arc, wherein the target current of the electric arc target is 220A, and the deposition time is 20min to form a metal bonding layer;
the bias voltage is adjusted to-100V and N is introduced 2 Maintaining the air pressure at 1.0Pa, starting a CrAl arc target, wherein the target current of the arc target is 220A, and the deposition time is 60min to form a CrAlN supporting layer;
adjusting bias voltage to-70V, starting a CrAl arc target, depositing for 80min to obtain a CrAlN layer, introducing C2H2 gas, adjusting the gas pressure to 1.5Pa, starting a TiSi arc target, depositing for 20min to obtain a TiSiCN layer, and alternately circulating for 6 times to form an alternate layer;
and after the deposition is finished, inflating the vacuum chamber and taking out the coated cutter body when the temperature of the vacuum chamber is reduced to be below 100 ℃.
The invention also provides a cutter preparation method for the shield tunneling machine, which comprises the following steps:
providing the cutter body 11, and pretreating the cutter body 11;
forming a metal bonding layer 12 on the surface of the cutter body 11 through arc ion plating deposition;
forming a CrAlN support layer 13 on the surface of the metallic bonding layer 12 by arc ion plating deposition;
several CrAlN layers 141 and TiSiCN layers 142 alternately arranged are formed on the surface of the CrAlN support layer 13 by arc ion plating deposition, and the several CrAlN layers 141 and TiSiCN layers 142 are combined to form the alternate layer 14.
The preparation method provided by the invention is actually implemented in the following specific operation modes:
example one
The CrAlN layer comprises the following elements in atomic percentage: 15at.% for Al, 40at.% for Cr, and 45at.% for N;
the atomic percentages of the elements in the TiSiCN layer are as follows: ti 35at.%, si 15at.%, C20 at.%, N25 at.%;
the thickness of a metal combination layer is 0.2 mu m, the thickness of a CrAlN support layer is 1 mu m, the total thickness of alternate layers is 20 mu m, the sum of the thicknesses of one CrAlN layer and one TiSiCN layer is 1 mu m, and the thickness ratio of the CrAlN layer to the TiSiCN layer is 1;
pretreating the cutter body, blasting sand to passivate the cutter body, cleaning surface pollutants by ultrasonic waves, drying, putting into a vacuum chamber, and vacuumizing the vacuum chamber at 500 ℃ to ensure that the vacuum degree is higher than 1.0 multiplied by 10 -2 Pa, etching the surface of the cutter body by adopting an ion source;
adjusting the bias voltage to-150V, introducing Ar gas, maintaining the gas pressure at 1.0Pa, starting the metal target of the electric arc, wherein the target current of the electric arc target is 160A, and the deposition time is 5min to form a metal bonding layer;
the bias voltage is adjusted to-100V and N is introduced 2 Maintaining the air pressure at 2.0Pa, starting a CrAl arc target, wherein the target current of the arc target is 200A, and the deposition time is 15min to form a CrAlN supporting layer;
adjusting bias voltage to-70V, starting CrAl arc target with target current of 160A, depositing for 10min to obtain CrAlN layer, introducing C 2 H 2 Adjusting the air pressure to 4.0Pa, starting a TiSi arc target, depositing for 15min to obtain a TiSiCN layer, and alternately circulating for 20 times to prepare an alternate layer formed by alternately superposing a CrAlN layer and a TiSiCN layer;
and after the deposition is finished, inflating the vacuum chamber and taking out the cutter body when the temperature of the vacuum chamber is reduced to be below 100 ℃.
Example two
The CrAlN layer comprises the following elements in atomic percentage: 20at.% Al, 30at.% Cr and 50at.% N;
the atomic percentages of the elements in the TiSiCN layer are as follows: ti:40at.%, si:10at.%, C:15at.%, N:35at.%;
the thickness of a metal bonding layer is 0.5 mu m, the thickness of a CrAlN supporting layer is 5 mu m, the total thickness of alternating layers is 39 mu m, the sum of the thicknesses of one CrAlN layer and one TiSiCN layer is 3 mu m, and the thickness ratio of the CrAlN layer to the TiSiCN layer is 2;
pretreating the cutter body, blasting sand to passivate the cutter body, cleaning surface pollutants by ultrasonic waves, drying, putting into a vacuum chamber, and vacuumizing the vacuum chamber at 500 ℃ to ensure that the vacuum degree is higher than 1.0 multiplied by 10 -2 Pa, etching the surface of the cutter body by adopting an ion source;
adjusting the bias voltage to-100V, introducing Ar gas, maintaining the gas pressure at 1.0Pa, starting the metal target of the electric arc, wherein the target current of the electric arc target is 180A, and the deposition time is 10min to form a metal bonding layer;
the bias voltage is adjusted to-100V and N is introduced 2 Maintaining the air pressure at 2.0Pa, starting a CrAl arc target, wherein the target current of the arc target is 200A, and the deposition time is 100min to form a CrAlN supporting layer;
adjusting bias voltage to-70V, starting CrAl arc target with target current of 200A, depositing for 20min to obtain CrAlN layer, introducing C 2 H 2 Adjusting the air pressure to 3.5Pa, starting a TiSi arc target, setting the target current of the arc target to be 200A, and depositing for 30min to obtain a TiSiCN layer; so alternately cycling 13 times to form alternating layers;
after the deposition is finished, the temperature of the vacuum chamber is reduced to be below 100 ℃, the vacuum chamber is inflated and the coating cutter body is taken out;
as shown by combining the graph of FIG. 2 and FIG. 3, the friction coefficient of the coating is about 0.4, which is significantly lower than the friction coefficient of 0.6-0.8 of the traditional nitride coating (TiAlN, crAlN, tiSiN, etc.), the wear depth of the coating is 0-0.2 μm, the wear width is about 0-100 μm, and the wear rate is calculated to be 5.2 × 10 -16 m 3 N.m, ofThe abrasion of the coating is small, which indicates that the coating has good wear resistance.
EXAMPLE III
The CrAlN layer comprises the following elements in atomic percentage: 25at.% Al, 20at.% Cr and 55at.% N;
the atomic percentage of each element in the TiSiCN layer is as follows: ti 45at.%, si 5at.%, C10 at.%, N40 at.%;
the thickness of a metal combination layer is 1.0 mu m, the thickness of a CrAlN support layer is 3 mu m, the total thickness of alternate layers is 30 mu m, the sum of the thicknesses of one CrAlN layer and one TiSiCN layer is 5 mu m, and the thickness ratio of the CrAlN layer to the TiSiCN layer is 4;
pretreating the cutter body, blasting sand to passivate the cutter body, cleaning surface pollutants by ultrasonic waves, drying, putting into a vacuum chamber, and vacuumizing the vacuum chamber at 500 ℃ to ensure that the vacuum degree is higher than 1.0 multiplied by 10 -2 Pa, etching the surface of the tool by adopting an ion source;
adjusting the bias voltage to-100V, introducing Ar gas, maintaining the gas pressure at 1.0Pa, starting the metal target of the electric arc, wherein the target current of the electric arc target is 220A, and the deposition time is 20min to form a metal bonding layer;
the bias voltage is adjusted to-100V and N is introduced 2 Maintaining the air pressure at 1.0Pa, starting a CrAl arc target, wherein the target current of the arc target is 220A, and the deposition time is 60min to form a CrAlN supporting layer;
adjusting the bias voltage to-70V, starting a CrAl arc target, depositing for 80min to obtain a CrAlN layer, introducing C2H2 gas, adjusting the gas pressure to 1.5Pa, starting a TiSi arc target, depositing for 20min to obtain a TiSiCN layer, and alternately circulating for 6 times to form an alternate layer;
and after the deposition is finished, inflating the vacuum chamber and taking out the coated cutter body when the temperature of the vacuum chamber is reduced to be below 100 ℃.
While the present invention has been described in detail and with reference to the embodiments thereof as illustrated in the accompanying drawings, it will be apparent to one skilled in the art that various changes and modifications can be made therein. Therefore, certain details of the embodiments are not to be interpreted as limiting, and the scope of the invention is to be determined by the appended claims.
Claims (10)
1. A cutter for a shield tunneling machine, comprising:
a cutter body;
a metallic bonding layer formed on a surface of the tool body;
a CrAlN support layer formed on a surface of the metallic bonding layer; and
and the alternating layers are formed on the surface of the CrAlN support layer and comprise a plurality of CrAlN layers and TiSiCN layers which are alternately arranged.
2. The cutter for a shield tunneling machine of claim 1, wherein the sum of the thicknesses of one of the CrAlN layer and the TiSiCN layer is 1 to 5 μm.
3. The cutter for a shield tunneling machine according to claim 2, wherein the thickness ratio of the CrAlN layer to the TiSiCN layer is 1.
4. The cutter for a shield tunneling machine of claim 3, wherein the CrAlN layer is provided with 4 to 40 layers, and the TiSiCN layer is correspondingly provided with 4 to 40 layers.
5. The cutter for a shield tunneling machine of claim 1, wherein the sum of the thicknesses of one of the CrAlN layer and the TiSiCN layer is 1 to 3 μm.
6. The cutter for a shield tunneling machine according to claim 5, wherein the thickness ratio of the CrAlN layer to the TiSiCN layer is 1.
7. The cutter for a shield tunneling machine of claim 6, wherein the CrAlN layer is provided with 30 to 50 layers, and the TiSiCN layer is correspondingly provided with 30 to 50 layers.
8. The cutter for a shield tunneling machine of claim 1, wherein the CrAlN layer has the following elements in atomic percent: 15-25 at.% of Al, 20-40 at.% of Cr and 45-55 at.% of N;
the TiSiCN layer comprises the following elements in atomic percentage: 35 to 45at.% of Ti, 5 to 15at.% of Si, 10 to 20at.% of C and 25 to 40at.% of N.
9. The cutter for a shield tunneling machine according to claim 1, wherein the metallic bonding layer has a thickness of 0.2 to 1.0 μm, the CrAlN support layer has a thickness of 1 to 5 μm, and the alternating layers have a thickness of 20 to 40 μm.
10. The method for preparing the cutter for the shield tunneling machine according to claim 1, comprising the steps of:
providing the cutter body, and pretreating the cutter body;
forming the metal bonding layer on the surface of the cutter body through arc ion plating deposition;
forming the CrAlN supporting layer on the surface of the metal bonding layer by arc ion plating deposition;
and forming a plurality of alternately arranged CrAlN layers and TiSiCN layers on the surface of the CrAlN supporting layer through arc ion plating deposition, wherein the plurality of CrAlN layers and the TiSiCN layers are combined to form the alternate layers.
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| CN202210813148.1A CN115142019A (en) | 2022-07-11 | 2022-07-11 | Cutter for shield machine and preparation method thereof |
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