CN115132879A - Preparation method of single crystal nano linearly polarized light detector - Google Patents
Preparation method of single crystal nano linearly polarized light detector Download PDFInfo
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- CN115132879A CN115132879A CN202210729763.4A CN202210729763A CN115132879A CN 115132879 A CN115132879 A CN 115132879A CN 202210729763 A CN202210729763 A CN 202210729763A CN 115132879 A CN115132879 A CN 115132879A
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- 239000013078 crystal Substances 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- JWVUFVZEYBYBAL-UHFFFAOYSA-N [Bi]=S.[Sb] Chemical compound [Bi]=S.[Sb] JWVUFVZEYBYBAL-UHFFFAOYSA-N 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 53
- 239000002070 nanowire Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000002243 precursor Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052787 antimony Inorganic materials 0.000 claims description 10
- 229910052797 bismuth Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000006163 transport media Substances 0.000 claims description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 7
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 229910052740 iodine Inorganic materials 0.000 claims description 3
- 239000011630 iodine Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 239000002609 medium Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 15
- 238000001514 detection method Methods 0.000 abstract description 12
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 230000010287 polarization Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000002524 electron diffraction data Methods 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000002267 linear dichroism spectroscopy Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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Abstract
The invention discloses a preparation method of a single crystal nano linearly polarized light detector, which comprises the following steps: growing an antimony bismuth sulfur single crystal material; stripping the antimony bismuth sulfur single crystal material, stripping the antimony bismuth sulfur single crystal material into antimony bismuth sulfur single crystal nanowires and transferring the antimony bismuth sulfur single crystal nanowires onto a substrate; preparing electrodes at two ends of the antimony bismuth sulfur monocrystal nanowire to obtain the monocrystal nanometer linearly polarized light detector. The invention takes the antimony bismuth sulfur monocrystal nanowire with anisotropy as a polarized light detection element, and the antimony bismuth sulfur monocrystal nanowire has different absorption characteristics for linearly polarized light in different directions due to the anisotropy of the antimony bismuth sulfur monocrystal nanowire, so that the antimony bismuth sulfur monocrystal nanowire can detect the linearly polarized light without an additional optical element, and the structure of the optical detector is simpler.
Description
Technical Field
The invention relates to the field of manufacturing of photovoltaic polarization detectors, in particular to a preparation method of a single crystal nanometer linearly polarized light detector.
Background
The optical detector includes intensity detection and polarization detection. Where the polarization information of light is one that is not discernable to the naked human eye, the fraction of information carried by the polarization can provide more information for the light detection technique than for intensity detection. Linear dichroism is a manifestation of the wave spectrum, which refers to the difference in absorption of polarized light with polarization directions parallel or perpendicular to the single crystal orientation. Linear dichroism has very strong practical applications such as polarization optical switching, near-field imaging, and polarization imaging, which have been put into practical use in the visible light band.
The conventional polarization detector is realized by matching polarizing elements such as gratings and the like with an optical detector, so that the device is complex in structure, large in size and high in failure rate.
Disclosure of Invention
Aiming at the problems, the invention provides a preparation method of a single crystal nanometer linearly polarized light detector, which uses a single crystal nanowire with anisotropy as a light detection element to realize direct detection of linearly polarized light.
In order to achieve the above object, the present invention provides a method for preparing a single crystal nano linearly polarized light detector, comprising:
growing an antimony bismuth sulfide single crystal material;
stripping the antimony bismuth sulfur single crystal material, stripping the antimony bismuth sulfur single crystal material into antimony bismuth sulfur single crystal nanowires and transferring the antimony bismuth sulfur single crystal nanowires onto a substrate;
preparing electrodes at two ends of the antimony bismuth sulfur monocrystal nanowire to obtain the monocrystal nanometer linearly polarized light detector.
According to an embodiment of the invention, the growing of the antimony bismuth sulfide single crystal material comprises:
placing a precursor material and a transport medium at one end of a vacuum bottle, wherein the precursor material comprises antimony powder, bismuth powder and sulfur powder;
putting the vacuum bottle into a tube furnace, wherein one end, provided with the precursor material and the transport medium, is positioned in a high-temperature region, and the other end is positioned in a low-temperature region;
heating a tube furnace, and growing the antimony bismuth sulfur single crystal material in a low-temperature region;
and cooling the tube furnace to room temperature to obtain the antimony bismuth sulfur single crystal material.
According to an embodiment of the invention, a heated tube furnace comprises:
heating the high-temperature zone to ensure that the temperature of the high-temperature zone is 490-530 ℃, and keeping the temperature for 260-320 hours, preferably 290 hours;
the low-temperature zone is heated to the temperature of 530-570 ℃ and is kept for 140-148 hours, preferably 144 hours, and then is cooled to the temperature of 430-470 ℃ for 140-150 hours, preferably 145 hours.
According to an embodiment of the present invention, a temperature-up rate of the heating high-temperature region is about 0.15 deg.C/min, a temperature-up rate of the heating low-temperature region is about 0.1 deg.C/min, and a temperature-down rate of the low-temperature region is about 2 deg.C/min.
According to the embodiment of the invention, the weight ratio of antimony powder, bismuth powder and sulfur powder in the precursor material comprises (1-1.5): (1-1.5): 3.
according to an embodiment of the invention, the transport medium comprises: iodine powder; the vacuum degree of the vacuum bottle is about 10 -5 And (7) supporting.
According to an embodiment of the invention, the method of stripping antimony bismuth sulphur single crystal material comprises mechanical stripping.
According to an embodiment of the invention, a substrate comprises: a silicon wafer with a silicon dioxide layer on the surface.
According to an embodiment of the invention, the thickness of the silicon dioxide layer is 280 to 320nm, preferably 300nm, and the surface crystal orientation is 100.
According to an embodiment of the present invention, the method of preparing the electrode comprises thermal evaporation.
According to the embodiment of the invention, the antimony bismuth sulfur monocrystal nanowire with anisotropy is used as a polarized light detection element, and the antimony bismuth sulfur monocrystal nanowire has different absorption characteristics for linearly polarized light in different directions due to the anisotropy of the antimony bismuth sulfur monocrystal nanowire, so that the antimony bismuth sulfur monocrystal nanowire can detect the linearly polarized light without an additional optical element, and the structure of the optical detector is simpler.
Drawings
FIG. 1 schematically illustrates a schematic diagram of a polarized light detector according to an embodiment of the invention;
FIG. 2 schematically illustrates a flow diagram for preparing a polarized light detector according to an embodiment of the invention;
FIG. 3 schematically shows a photograph of antimony bismuth sulfide single crystal nanowires according to an embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating the growth of antimony bismuth sulfide single crystal material according to an embodiment of the invention;
FIG. 5 is a graph schematically illustrating temperature changes during the growth of an Sb-Bi-S single crystal material according to an embodiment of the present invention;
FIG. 6 is a photograph schematically showing a single crystal material of antimony, bismuth and sulfur after completion of growth thereof according to an embodiment of the present invention;
FIG. 7 schematically shows a selected region electron diffraction pattern of antimony bismuth sulfur nanowires according to an embodiment of the invention;
FIG. 8 schematically shows a high resolution TEM image of Sb-Bi-S nanowires according to an embodiment of the present invention;
FIG. 9 schematically shows a cross-sectional high resolution image of an antimony bismuth sulfur nanowire according to an embodiment of the present invention;
FIG. 10 schematically shows a large angle annular dark field scanning electron microscope image and Sb, Bi and S element distribution maps according to an embodiment of the invention;
fig. 11 schematically shows an X-ray energy spectrum of antimony bismuth sulfur nanowires according to an embodiment of the present invention.
Detailed Description
In the field of current information technology, semiconductors with in-plane anisotropic structures are gaining increasing attention as material systems that are sensitive to linear polarization information. The in-plane anisotropic material has different absorption characteristics for linearly polarized light in different directions due to the structural asymmetry, so that the direct detection of the linearly polarized light can be realized without an additional optical element, and the device has a simple structure. The method has important influence on the miniaturization and integration of the device.
In-plane anisotropy VA group ternary nanowire antimony bismuth sulfide (SbBiS) 3 ) The compound is a layered semiconductor, and Sb or Bi atoms and S atoms can be combined through covalent bonds to form a wrinkled chain crystal structure. Thus, itThe low symmetry of the crystal structure and the 1D geometry of the SbBiS 3 Is expected to become an ideal candidate material for the polarization sensitive photoelectric detector.
According to the above inventive concept, the present invention provides a method for preparing a single crystal nano linearly polarized light detector, comprising:
growing an antimony bismuth sulfur single crystal material;
stripping the antimony bismuth sulfur single crystal material, stripping the antimony bismuth sulfur single crystal material into antimony bismuth sulfur single crystal nanowires and transferring the antimony bismuth sulfur single crystal nanowires onto a substrate;
preparing electrodes at two ends of the antimony bismuth sulfur monocrystal nanowire to obtain the monocrystal nanometer linearly polarized light detector.
According to the embodiment of the invention, the antimony bismuth sulfur monocrystal nanowire with anisotropy is used as a polarized light detection element, and the antimony bismuth sulfur monocrystal nanowire has different absorption characteristics for linearly polarized light in different directions due to the anisotropy of the antimony bismuth sulfur monocrystal nanowire, so that the antimony bismuth sulfur monocrystal nanowire can detect the linearly polarized light without an additional optical element, and the structure of the optical detector is simpler.
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Fig. 1 schematically shows a principle schematic of a polarized light detector according to an embodiment of the invention.
As shown in fig. 1, the polarization photodetector includes: a source electrode 1, an antimony bismuth sulfur monocrystal nanowire 2 and a drain electrode 3. The incident light 4 is converted into linearly polarized light through a Glan Taylor prism 5, changes the polarization direction through a half-wave plate 6, and then is emitted into SbBiS 3 The single crystal nanowire 2 detects it.
FIG. 2 schematically shows a flow chart for preparing a polarized light detector according to an embodiment of the invention.
As shown in fig. 2, the method of manufacturing the single crystal nano linearly polarized light detector includes steps S10-S30.
Operation S10, an antimony bismuth sulfide single crystal material is grown.
In operation S20, the antimony bismuth sulfur single crystal material is peeled, and the antimony bismuth sulfur single crystal material is peeled into antimony bismuth sulfur single crystal nanowires and transferred onto a substrate.
Fig. 3 schematically shows a photograph of antimony bismuth sulfur single crystal nanowires according to an embodiment of the present invention. As shown in fig. 3, the antimony bismuth sulfur single crystal nanowire has a one-dimensional structure.
According to the embodiment of the invention, the method for stripping the antimony bismuth sulfur single crystal material comprises mechanical stripping, wherein bulk materials are stripped into thin layer materials and transferred onto a substrate;
according to an embodiment of the invention, a substrate comprises: a silicon wafer with a silicon dioxide layer on the surface; the thickness of the silicon dioxide layer is 280 to 320nm, such as 280nm, 290nm, 300nm, 310nm, 320nm, preferably 300nm, and the surface crystal orientation is 100.
According to the embodiment of the invention, the substrate is ultrasonically cleaned for 10min by acetone and isopropanol respectively, and finally, the stripped antimony bismuth sulfur single crystal nanowire is placed after being cleaned by deionized water.
In operation S30, electrodes are prepared at both ends of the antimony bismuth sulfur single crystal nanowire to obtain a single crystal nano linearly polarized light detector.
According to an embodiment of the present invention, a method of preparing an electrode includes thermal evaporation; the electrode material comprises gold.
According to an embodiment of the present invention, step S10 includes steps S11-S14.
Operation S11 is to place the precursor material and the transport medium at one end of the vacuum bottle, where the precursor material includes antimony powder, bismuth powder, and sulfur powder.
According to the embodiment of the invention, the weight ratio of antimony powder, bismuth powder and sulfur powder in the precursor material comprises (1-1.5): (1-1.5): 3; the transport medium includes: 0.02g of iodine powder; the vacuum of the vacuum bottle is about 10-5 torr; the vacuum bottle includes a vacuum ampoule.
In operation S12, the vacuum bottle is placed in a tube furnace, and one end of the tube furnace, where the precursor material and the transport medium are placed, is located in a high temperature region and the other end is located in a low temperature region.
According to an embodiment of the invention, the tube furnace is a dual temperature zone tube furnace.
In operation S13, the tube furnace is heated, and the antimony bismuth sulfur single crystal material is grown in a low temperature region.
FIG. 4 is a schematic diagram showing the growth of antimony bismuth sulfide single crystal material according to an embodiment of the invention. As shown in FIG. 4, the precursor material and the transport medium are located in a high temperature region, and the antimony bismuth sulfur single crystal material is grown in a low temperature region.
According to an embodiment of the invention, a heating tube furnace comprises:
heating the high-temperature zone to ensure that the temperature of the high-temperature zone is 490-530 ℃, such as 490 ℃, 500 ℃, 510 ℃, 520 ℃, 530 ℃, preferably 510 ℃, and keeping the temperature for 260 to 320 hours, such as 260 hours, 270 hours, 280 hours, 290 hours, 300 hours, 310 hours, 320 hours, preferably 290 hours;
the low temperature zone is heated to the temperature of 530 ℃ and 570 ℃, such as 530 ℃, 540 ℃, 550 ℃, 560 ℃ and 570 ℃, preferably kept for 140 to 148 hours, such as 140 hours, 142 hours, 144 hours, 146 hours and 148 hours, preferably after 144 hours, and then cooled to the temperature of 430 ℃ and 470 ℃, such as 430 ℃, 440 ℃, 450 ℃, 460 ℃, 470 ℃ for 140 to 150 hours, such as 140 hours, 142 hours, 144 hours, 146 hours, 148 hours and 150 hours.
According to an embodiment of the present invention, the heating rate of the heating high temperature region is about 0.15 deg.C/min, the heating rate of the heating low temperature region is about 0.1 deg.C/min, and the cooling rate of the low temperature region is about 2 deg.C/min.
Fig. 5 is a graph schematically showing temperature changes during the growth of an antimony bismuth sulfur single crystal material according to an embodiment of the present invention. As shown in fig. 5, the temperature of the low temperature region is higher than that of the high temperature region at the beginning, when the temperature of the low temperature region is reduced to be lower than that of the high temperature region, the antimony bismuth sulfur single crystal material starts to grow, and the temperature of the low temperature region and the high temperature region is reduced to room temperature after the growth is finished.
In operation S14, the tube furnace is cooled to room temperature, and an antimony bismuth sulfur single crystal material is obtained.
Fig. 6 schematically shows a photo of the antimony bismuth sulfur single crystal material after the growth is completed according to the embodiment of the invention, and as shown in fig. 6, the antimony bismuth sulfur single crystal material grows in a low temperature region, presents a macroscopic needle-like structure morphology and has a metallic luster.
FIG. 7 schematically shows a selected region electron diffraction pattern of antimony bismuth sulfur nanowires according to an embodiment of the invention; FIG. 8 schematically shows a high resolution TEM image of Sb-Bi-S nanowires according to an embodiment of the present invention; FIG. 9 schematically shows a cross-sectional high resolution image of an antimony bismuth sulfur nanowire according to an embodiment of the present invention; FIG. 10 schematically shows a large angle annular dark field scanning electron microscope image and Sb, Bi and S element distribution maps according to an embodiment of the invention; fig. 11 schematically shows an X-ray energy spectrum of antimony bismuth sulfur nanowires according to an embodiment of the present invention. According to the graphs of FIGS. 7-11, the antimony bismuth sulfur nanowires are uniformly distributed, and the crystal morphology is good.
According to the embodiment of the invention, the electric welding machine is utilized to lead the polarized light detector to the PCB, and the polarized light detector can detect the input linearly polarized light and image the linearly polarized light.
According to the embodiment of the invention, the used conducting wire is an aluminum wire; the image contains 100 x 75 pixels.
According to an embodiment of the present invention, SbBiS is used 3 The polarized light detector of the single crystal nanowire can realize common light detection within the wavelength range of 360-1064 nm and realize direct broad spectrum polarized light detection of ultraviolet-near infrared within the wavelength range of 360-808 nm.
According to the embodiment of the invention, the optical responsivity of the detector at a 360nm laser can reach 6.82AW -1 The anisotropic current ratio for linearly polarized light was 1.09; the optical responsivity of the laser at 532nm can reach 7.80AW -1 The anisotropic current ratio for linearly polarized light was 1.06; the optical responsivity of the 638nm laser can reach 5.56AW -1 The anisotropic current ratio for linearly polarized light was 1.087; the optical responsivity of the laser at 808nm can reach 4.11AW -1 The anisotropic current ratio for linearly polarized light was 1.12; the optical responsivity of the laser at 1064nm was 0.013AW -1 。
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A preparation method of a single crystal nanometer linearly polarized light detector comprises the following steps:
growing an antimony bismuth sulfur single crystal material;
stripping the antimony bismuth sulfur single crystal material, stripping the antimony bismuth sulfur single crystal material into antimony bismuth sulfur single crystal nanowires and transferring the antimony bismuth sulfur single crystal nanowires onto a substrate;
preparing electrodes at two ends of the antimony bismuth sulfur monocrystal nanowire to obtain the monocrystal nano linearly polarized light detector.
2. The method of claim 1, wherein the growing antimony bismuth sulfide single crystal material comprises:
placing a precursor material and a transport medium at one end of a vacuum bottle, wherein the precursor material comprises antimony powder, bismuth powder and sulfur powder;
putting the vacuum bottle into a tube furnace, wherein one end, provided with the precursor material and the transport medium, is positioned in a high-temperature area, and the other end is positioned in a low-temperature area;
heating a tube furnace, wherein the antimony bismuth sulfur single crystal material grows in a low-temperature region;
and cooling the tube furnace to room temperature to obtain the antimony bismuth sulfur single crystal material.
3. The method of manufacturing of claim 2, wherein the heated tube furnace comprises:
heating the high-temperature area to ensure that the temperature of the high-temperature area is 490-530 ℃, and keeping the temperature for 260 to 320 hours, preferably 290 hours;
the low-temperature zone is heated to the temperature of 530-570 ℃ and is kept for 140-148 hours, preferably 144 hours, and then is cooled to the temperature of 430-470 ℃ for 140-150 hours, preferably 145 hours.
4. The production method according to claim 3, wherein a temperature rise rate of the heating high-temperature region is about 0.15 ℃/min, a temperature rise rate of the heating low-temperature region is about 0.1 ℃/min, and a temperature drop rate of the low-temperature region is about 2 ℃/min.
5. The preparation method according to claim 2, wherein the weight ratio of the antimony powder, the bismuth powder and the sulfur powder in the precursor material comprises (1-1.5): (1-1.5): 3.
6. the manufacturing method according to claim 2, wherein the transporting medium includes: iodine powder; the vacuum degree of the vacuum bottle is about 10 -5 And (4) supporting.
7. The production method according to claim 1, wherein the method of peeling the antimony bismuth sulfur single crystal material comprises mechanical peeling.
8. The production method according to claim 1, wherein the substrate includes: a silicon wafer with a silicon dioxide layer on the surface.
9. The production method according to claim 7, wherein the thickness of the silicon dioxide layer is 280 to 320nm, preferably 300nm, and the surface crystal orientation is 100.
10. The production method according to claim 1, wherein the production method of the electrode comprises thermal evaporation.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101000865A (en) * | 2006-01-12 | 2007-07-18 | 国际商业机器公司 | Method for fabricating an inorganic nanocomposite and method for fabricating solar battery |
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