CN115129248A - Self-adaptive flash memory voltage adjusting method and system and storage device - Google Patents

Self-adaptive flash memory voltage adjusting method and system and storage device Download PDF

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Publication number
CN115129248A
CN115129248A CN202210749007.8A CN202210749007A CN115129248A CN 115129248 A CN115129248 A CN 115129248A CN 202210749007 A CN202210749007 A CN 202210749007A CN 115129248 A CN115129248 A CN 115129248A
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China
Prior art keywords
voltage
power supply
nand
nand particles
particles
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CN202210749007.8A
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Chinese (zh)
Inventor
梁小龙
叶云杰
王斐
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Shenzhen Demingli Electronics Co Ltd
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Shenzhen Demingli Electronics Co Ltd
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Priority to CN202210749007.8A priority Critical patent/CN115129248A/en
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0604—Improving or facilitating administration, e.g. storage management
    • G06F3/0607—Improving or facilitating administration, e.g. storage management by facilitating the process of upgrading existing storage systems, e.g. for improving compatibility between host and storage device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0629—Configuration or reconfiguration of storage systems
    • G06F3/0632—Configuration or reconfiguration of storage systems by initialisation or re-initialisation of storage systems
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]

Abstract

The embodiment of the invention discloses a method, a system and a storage device for self-adaptive adjustment of flash memory voltage, wherein the method comprises the following steps: when the identification number of the NAND particles is read, determining the working voltage supported by the NAND particles based on the identification number of the NAND particles; comparing a current supply voltage of the NAND particles to an operating voltage supported by the NAND particles to determine whether to perform a voltage adjustment; and if the voltage is adjusted, sending a voltage adjusting signal to control the power supply switching module to adjust the power supply voltage of the NAND particles. The embodiment of the invention realizes the self-adaptive adjustment of the power supply voltage of the NAND particles, avoids the risk of damage of the NAND particles due to overhigh power supply voltage, does not need manpower for adjustment in the process, saves manpower resources and improves the use efficiency of the NAND particles.

Description

Self-adaptive flash memory voltage adjusting method and system and storage device
Technical Field
The invention relates to the technical field of flash memories, in particular to a flash memory voltage self-adaptive adjusting method, a flash memory voltage self-adaptive adjusting system and a flash memory voltage self-adaptive adjusting storage device.
Background
The NAND flash memory (NAND particle) technology is a mainstream storage technology in the era of Internet + big data, and has the characteristics of high read-write speed, high storage density and the like. When using NAND flash memory, a fixed VCC voltage output is usually set, for example, if the VCC voltage of the NAND particles used is 3.3V, the output 3.3V power supply is preset, so that the NAND particles can be supplied with 3.3V voltage as soon as they are powered on. That is, the power voltage is a fixed value, and is 3.3V each time the power is re-powered, so the fixed voltage power supply scheme can only be applied to NAND particles with VCC voltage of 3.3V.
With the progress of NAND particle technology, NAND particles supporting lower voltage (such as 2.5V VCC) exist, the fixed voltage power supply scheme cannot support 2.5V VCC voltage by the NAND particles without adjustment, but if 2.5V VCC voltage is supported by the fixed voltage power supply scheme, the NAND particles suitable for the power supply voltage need to be replaced, and thus, the investment of manpower and material resources is easily caused. Therefore, how to adaptively adjust the supply voltage of the NAND particles is an urgent problem to be solved.
Disclosure of Invention
In view of the above, to solve the deficiencies of the prior art, the present invention provides a method, a system and a storage device for adaptive adjustment of flash memory voltage.
In a first aspect, the present invention provides a method for adaptively adjusting a flash memory voltage, including:
when the identification number of the NAND particles is read, determining the working voltage supported by the NAND particles based on the identification number of the NAND particles;
comparing a current supply voltage of the NAND particles to an operating voltage supported by the NAND particles to determine whether to perform a voltage adjustment;
and if the voltage is adjusted, sending a voltage adjusting signal to control a power supply switching module to adjust the power supply voltage of the NAND particles.
In an alternative embodiment, the method further comprises:
and if the identification number of the NAND particles cannot be read, sending the voltage adjusting signal to control the power supply switching module to adjust the power supply voltage of the NAND particles.
In an alternative embodiment, the process of determining whether to perform voltage adjustment includes:
if the current power supply voltage of the NAND particles does not match the working voltage supported by the NAND particles, determining to perform voltage adjustment;
and if the current power supply voltage of the NAND particles matches the working voltage supported by the NAND particles, determining not to adjust the voltage.
In an alternative embodiment, the method further comprises:
and after the power supply voltage of the NAND particles is adjusted, restarting the NAND particles to access the adjusted power supply voltage to the NAND particles, and solidifying the adjusted power supply voltage.
In a second aspect, the present invention provides a flash memory voltage adaptive regulation system, including:
the storage main control unit is used for determining the working voltage supported by the NAND particles based on the identification numbers of the NAND particles when the identification numbers of the NAND particles are read; comparing a current supply voltage of the NAND particles to an operating voltage supported by the NAND particles to determine whether to adjust the supply voltage; if the power supply voltage needs to be adjusted, a voltage adjustment signal is sent;
and the power supply switching module is used for receiving the voltage adjusting signal so as to adjust the current power supply voltage of the NAND particles.
In an optional embodiment, the storage main controller is further configured to send the voltage adjustment signal to control the power switching module to adjust the current power supply voltage of the NAND particle if the identification number of the NAND particle cannot be read.
In an alternative embodiment, the power switching module includes a power conversion unit, a switching device, an inductor, a first resistor, a second resistor, and a third resistor;
one end of the power supply conversion unit is connected with one end of the inductor, one end of the first resistor, one end of the second resistor and one end of the third resistor respectively, and the other end of the power supply conversion unit is connected with a power supply voltage;
the other end of the inductor is connected with one end of the first resistor, the other end of the first resistor is connected with one end of the second resistor, one end of the second resistor is also connected with one end of the third resistor, and the other end of the second resistor is grounded;
the other end of the third resistor is used for being grounded through the switching device;
the switching device is used for connecting the storage master control, and the storage master control is used for sending the voltage adjusting signal to control the switching device to be conducted so as to adjust the feedback voltage signal received by the power supply conversion unit;
the power supply conversion unit is used for outputting the working voltage supported by the NAND particles according to the state of the feedback voltage signal.
In an optional embodiment, the power switching module includes two power supply voltage branches for providing VCC voltage, and is configured to switch, when receiving the voltage adjustment signal, a current power supply voltage branch to another power supply voltage branch for outputting power supply voltage.
In a third aspect, the present invention provides a storage device, comprising a memory and at least one processor, wherein the memory stores a computer program, and the processor is configured to execute the computer program to implement the flash memory voltage adaptive adjustment method according to any one of the preceding claims.
In a fourth aspect, the present invention provides a computer storage medium storing a computer program which, when executed, implements a flash memory voltage adaptive adjustment method according to any one of the preceding claims.
The embodiment of the invention has the following beneficial effects:
in the embodiment, the read identification number of the NAND particles is used for determining the working voltage supported by the NAND particles, and the current power supply voltage of the NAND particles is compared with the supported working voltage to determine whether to perform voltage adjustment or not, and when the voltage adjustment is performed, the voltage adjustment signal is sent, so that the power supply switching module adjusts the power supply voltage of the NAND particles through the voltage adjustment signal, thereby realizing the self-adaptive adjustment of the power supply voltage of the NAND particles, avoiding the risk of damage of the NAND particles due to overhigh power supply voltage, and performing adjustment without manpower in the process, saving manpower resources, and improving the use efficiency of the NAND particles.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings required to be used in the embodiments will be briefly described below, and it should be understood that the following drawings only illustrate some embodiments of the present invention, and therefore should not be considered as limiting the scope of the present invention. Like components are numbered similarly in the various figures.
FIG. 1 is a schematic diagram illustrating an embodiment of a flash memory voltage adaptive adjustment method according to an embodiment of the present invention;
FIG. 2 is a schematic diagram illustrating an interaction of a method for adaptive adjustment of flash memory voltage according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing another embodiment of the adaptive flash memory voltage adjusting method in the embodiment of the invention;
FIG. 4 is a schematic structural diagram of a flash memory voltage adaptive regulation system according to an embodiment of the present invention;
fig. 5 shows a hardware connection diagram of the power switching module in the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
Hereinafter, the terms "including", "having", and their derivatives, which may be used in various embodiments of the present invention, are only intended to indicate specific features, numbers, steps, operations, elements, components, or combinations of the foregoing, and should not be construed as first excluding the existence of, or adding to, one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing.
Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which various embodiments of the present invention belong. Terms such as those defined in commonly used dictionaries will be interpreted as having a meaning that is the same as a contextual meaning in the related art and will not be interpreted as having an idealized or overly formal meaning unless expressly so defined herein in various embodiments of the present invention.
The NAND particles are used for forming a NAND Flash memory and are one of Flash memories.
GPIO (General-purpose input/output), a General-purpose input/output, the pin of which can be freely used by a user through program control.
The existing fixed voltage scheme can only be used for NAND particles with a power supply voltage (VCC voltage) of 3.3V. With the advancement of NAND particle technology, NAND particles supporting lower supply voltages (e.g., 2.5V VCC voltage) are available, and thus, the NAND particles cannot support 2.5V voltage without adjusting the supply voltage to the NAND particles. If the VCC voltage of 2.5V is supported in the original scheme, the materials need to be replaced, which causes the investment of manpower and material resources. In view of the above, embodiments of the present invention provide a method for adaptively adjusting a flash memory voltage, so as to solve the above technical problem.
Example 1
Referring to fig. 1, a detailed description is provided below of an embodiment of a flash memory voltage adaptive adjustment method.
And S10, when the identification number of the NAND particles is read, determining the working voltage supported by the NAND particles based on the identification number of the NAND particles.
Referring to fig. 2, fig. 2 is an interaction diagram of the adaptive flash memory voltage adjusting method. When a disk containing NAND particles (NAND Flash memory) is connected to a HOST HOST, a power supply switching module supplies power to the NAND particles according to a preset power supply voltage, for example, when the NAND Flash particles are supplied with power, two power supply sources are needed, one is VCC voltage (core voltage), and the voltage is usually 3.3V; the other is the VCCQ voltage (IO voltage), typically 1.8V. The power conversion unit in the power switching module can supply power through the two power supplies, so that the NAND particles can work normally.
When the disk is powered on, the power supply switching module outputs a fixed VCC voltage to supply power to the NAND particles by default, and then the identification number (namely, flash ID) of the NAND particles is read by the main control. In the process, if the storage master control cannot read the identification number of the NAND particles, the storage master control directly sends a voltage adjusting signal to the power supply switching module to control the power supply switching module to adjust the power supply voltage of the NAND particles. It should be noted that adjusting the supply voltage of the NAND particles in the present embodiment refers to adjusting the VCC voltage (core voltage) of the NAND particles.
When the storage master controller normally reads the identification number of the NAND particle, the identification number is compared with each identification number in a preset NAND particle identification number database (hereinafter referred to as a database) according to the identification number, and basic information of the NAND particle corresponding to the identification number, including but not limited to the type of the NAND particle, a manufacturer, characteristic information of the NAND particle and the like, is extracted from the identification number, so that the working voltage supported by the NAND particle can be correspondingly obtained.
S20, the current supply voltage of the NAND particles is compared with the operating voltage supported by the NAND particles to determine whether to perform a voltage adjustment.
As a possible implementation manner, as shown in fig. 3, the step S20 may specifically include the following steps:
and S21, judging whether the current power supply voltage of the NAND particles is matched with the working voltage supported by the NAND particles.
S22, if the current supply voltage of the NAND particle does not match the operating voltage supported by the NAND particle, determining to perform a voltage adjustment.
S23, if the current supply voltage of the NAND particle matches the operating voltage supported by the NAND particle, then it is determined that no voltage adjustment is to be made.
Specifically, the current supply voltage of the NAND particles is compared to its supported operating voltage to determine whether to make an adjustment to the supply voltage of the NAND particles. If the current power supply voltage of the NAND particles is lower than or higher than the working voltage supported by the NAND particles, the fact that the power supply voltage provided by the NAND particles by the power supply switching module is not suitable for the NAND particles is indicated, and the adjustment of the power supply voltage of the NAND particles is determined; if the current power supply voltage of the NAND particles is equal to the working voltage supported by the NAND particles, it indicates that the power supply voltage provided by the power supply switching module for the NAND particles is the voltage supported by the NAND particles, and it is determined that the power supply voltage of the NAND particles is not adjusted.
And S30, if the voltage is adjusted, sending a voltage adjusting signal to control the power supply switching module to adjust the power supply voltage of the NAND particles.
When the voltage adjustment is determined, the storage master controller sends a voltage adjustment signal to the power supply switching module, so that the power supply switching module can adaptively adjust the supply voltage of the NAND through the voltage adjustment signal, and the automatic adjustment of the supply voltage of the NAND particles is realized.
Optionally, after the power supply voltage of the NAND particles is adjusted, the NAND particles are restarted, the storage master control power switching module outputs the adjusted power supply voltage to the NAND particles, and the adjusted power supply voltage is cured, so that the NAND particles are switched in the power supply voltage after being restarted each time in the using process.
According to the embodiment, the read identification number of the NAND particles is used for determining the rated voltage of the NAND particles, the read working voltage of the NAND particles is compared with the rated voltage, and when the working voltage of the NAND particles is inconsistent with the rated voltage, the voltage adjusting signal is sent according to the rated voltage suitable for the NAND particles, so that the power supply conversion unit adjusts the power supply voltage of the NAND particles through the voltage adjusting signal, the self-adaptive adjustment of the power supply voltage of the NAND particles is achieved, the risk that the NAND particles are damaged due to overhigh working voltage is avoided, the process is a dynamic adjustment process, manual adjustment is not needed, human resources are saved, and the use efficiency of the NAND particles is improved.
Example 2
Referring to fig. 4, the present embodiment provides a flash memory voltage adaptive regulation system, and the flash memory voltage adaptive regulation system will be described in detail below.
A storage master 41, configured to, when the identification number of the NAND particle 42 is read, determine, based on the identification number of the NAND particle 42, a working voltage supported by the NAND particle 42; comparing the current supply voltage of NAND particles 42 to the operating voltage supported by NAND particles 42 to determine whether to adjust the supply voltage; if the supply voltage needs to be adjusted, a voltage adjustment signal is sent.
And a power switching module 43 for receiving the voltage adjustment signal to adjust the current power supply voltage of the NAND particles 42.
As shown in fig. 2 and 4, the storage master 41 communicates with a HOST (HOST), and is in communication connection with the NAND particles 42 and the power switching module 43, and the power switching module 43 supplies power to the disk (including the storage master 41, the NAND Flash particles, and other peripheral devices, where the storage master 41 may be an SSD master chip, etc.) through a preset power supply. For example, the power switching module 43 provides a fixed VCC voltage to supply power to the disk, and the VCC voltage is usually 3.3V.
Further, the power switching module 43 supplies power to the NAND particles 42 through the disk, for example, the VCC voltage of the connected NAND particles 42 is 3.3V, and usually the power on the disk is preset to output 3.3V, so that the NAND particles 42 can be supplied with 3.3V voltage as soon as the disk is powered on. Wherein the supply voltage is a fixed value, i.e. 3.3V each time the NAND particle 42 restarts to power up, and the storage master 41 can control the output enable of the power switching module 43.
When the host accesses the NAND particles 42, the mass production tool inside the host can perform mass production operation on the whole disk. When the host performs mass production operation on the NAND particles 42, the storage master 41 reads the identification number of the NAND particles 42, compares the identification number of the NAND particles 42 with the identification number in the database preset in the mass production tool, and extracts the basic information of the NAND particles 42 corresponding to the identification number, including but not limited to the type of the NAND particles 42, the manufacturer, the characteristic information of the NAND particles 42, and the like, to determine the operating voltage supported by the NAND particles 42.
The current supply voltage of the NAND particles 42 is compared to its supported operating voltage to determine whether an adjustment of the supply voltage of the NAND particles 42 is made. If the current power supply voltage of the NAND particle 42 is lower than or higher than the operating voltage supported by the NAND particle 42, it indicates that the power supply voltage provided by the power switching module 43 for the NAND particle 42 is not suitable for the NAND particle 42, and it is determined to adjust the power supply voltage of the NAND particle 42; if the current power supply voltage of the NAND particle 42 is equal to the operating voltage supported by the NAND particle 42, which means that the power supply voltage provided by the power switching module 43 for the NAND particle 42 is the voltage supported by the NAND particle 42, it is determined that the adjustment of the power supply voltage of the NAND particle 42 is not performed. When it is determined that the voltage adjustment is performed, the storage main controller 41 sends a voltage adjustment signal to the power supply switching module 43, and after receiving the voltage adjustment signal, the power supply switching module 43 adjusts the output power supply, thereby implementing adaptive adjustment of the power supply voltage of the NAND particles 42.
In this embodiment, the storage master 41 is further configured to directly send a voltage adjustment signal to the power switching module 43 if the identification number of the NAND particle 42 cannot be read. That is, when the host performs mass production operation on the NAND grain 42, and the storage master 41 cannot read the identification number of the NAND grain 42, the storage master 41 directly sends the voltage adjustment signal to the power switching module 43, and the power switching module 43 adjusts the output power supply voltage when receiving the voltage adjustment signal.
Optionally, the host is further configured to restart the connection with the NAND particle 42 after the power switching module 43 adjusts the power supply voltage of the NAND particle 42; the power switching module 43 is further configured to input the adjusted power supply voltage to the NAND particle 42 when the host restarts connection with the NAND particle 42, and fixedly set the adjusted power supply voltage as a default output voltage of the power switching module 43, so that the power switching module 43 defaults to output the power supply voltage each time the disk is powered on.
Exemplarily, as shown in fig. 5, it is a hardware connection diagram of the power supply switching module 43; the power switching module 43 includes a power conversion unit 431, a switching device 432, an inductor L1, a first resistor R1, a second resistor R2, and a third resistor R3; one end of the power conversion unit 431 is connected to one ends of the inductor L1, the first resistor R1, the second resistor R2 and the third resistor R3, respectively, and the other end of the power conversion unit 431 is connected to a power supply voltage; the other end of the inductor L1 is connected with one end of a first resistor R1, the other end of the first resistor R1 is connected with one end of a second resistor R2, one end of the second resistor R2 is also connected with one end of a third resistor R3, and the other end of the second resistor R2 is grounded; the other end of the third resistor R3 is used for grounding through the switching device 432; the switching device 432 is configured to be connected to the storage master 41, and the storage master 41 is configured to send a voltage adjustment signal to control the switching device 432 to be turned on, so as to adjust the feedback voltage signal received by the power conversion unit 431; the power conversion unit 431 is used for outputting an operating voltage supported by the NAND particles 42 according to the state of the feedback voltage signal.
In particular, the storage master 41 may control the opening and closing of the switching device 432. When the switching device 432 is turned off, the resistor R3 is not connected to the circuit, so that the divided voltage generated by the resistor R1 and the resistor R2 does not change, and at this time, the state of the feedback voltage signal (VFB) received by the power conversion unit 431 does not change; when the switching device 432 is turned on, the resistor R3 is connected to the circuit, and the resistor R1, the resistor R2 and the resistor R3 are combined, so that the divided voltage changes, at this time, the state of the feedback voltage signal (VFB) received by the power conversion unit 431 changes, and then the power conversion unit 431 outputs the working voltage supported by the NAND particles 42 according to the state of the feedback power signal, thereby realizing the regulation of the output Voltage (VOUT) of the power conversion unit 431, wherein the output voltage is the supply voltage provided by the power conversion unit 431.
For example, when the NAND particle 42 is connected to the host, the power conversion unit 431 outputs a voltage of 2.5V by default to supply power to the disk, and at this voltage, the ID number of the NAND particle 42 can be read. When the disk is powered on, the mass production tool of the host computer is opened to prepare for mass production, and the mass production tool identifies the disk to be mass produced and starts mass production. The storage main control 41 reads the identification number of the NAND particle, compares the identification number with the identification number of the database in the mass production tool, and determines that the voltage supported by the NAND particle 42 corresponding to the identification number is 3.3V, that is, the NAND particle 42 can normally operate only when the power supply voltage is 3.3V; at this time, the switching device 432 of the VCC power supply is controlled to be turned on through the GPIO port, the equivalent resistance value of the parallel resistor changes at this time, VFB changes, and VOUT output becomes 3.3V. Then, the storage master 41 maintains the on state of the switching device 432 of the power conversion unit 431, and restarts the power supply of the NAND particles 42 to continue to complete the mass production operation, and solidifies the default output voltage of the power conversion unit 431, so that the power conversion unit 431 outputs the supply voltage of 3.3V by default every time the disk is powered on after the mass production is completed.
It is noted that what is realized by the hardware connection diagram of fig. 5 is that the output voltage of the power conversion unit 431 is adjusted by the parallel connection of the resistor R2 and the resistor R3. In fact, the output voltage may also be adjusted by the parallel connection of the resistor R1 and the resistor R3, and the effects achieved by the two resistors are the same, which are not described herein again.
Optionally, a single chip microcomputer is added to the disk, so that adaptive adjustment of the power supply voltage of the NAND particles 42 can be achieved, wherein communication is performed between the storage main control 41 and the single chip microcomputer, the single chip microcomputer controls the power supply conversion unit 431, the disk is started, the single chip microcomputer controls the power supply voltage to be 2.5V, and then whether the voltage needs to be switched is judged according to an indication of the storage main control 41.
Optionally, the power switching module 43 may include two power supply voltage branches for providing the core voltage, and is configured to switch the current power supply voltage branch to another power supply voltage branch for outputting the power supply voltage when receiving the voltage adjustment signal. That is, the power switching module 43 is implemented based on one power supply in the above embodiment, but this embodiment may also be implemented by two power supplies instead, that is, one power supply fixedly outputs a VCC voltage of 3.3V, and the other power supply outputs a VCC voltage of 2.5V, and the storage main controller 41 selects to turn on one VCC voltage to supply to the NAND particle 42 according to the actual voltage requirement of the NAND particle 42.
Optionally, the preset identification number database may not be placed in a mass production tool, or a storage device (such as an EEPROM) may be disposed on the disk, the preset identification number database is placed in the storage device, and the read NAND particle 42 identification number is compared with the identification number of the database in the storage device to determine the identification number.
In the present embodiment, after the NAND particle 42 is powered on, the storage master 41 reads the identification number of the NAND particle, and compares the current power supply voltage of the NAND particle 42 with the supported working voltage to determine whether to perform voltage adjustment; when voltage adjustment is performed, a voltage adjustment signal is sent, and the power supply conversion unit 431 automatically switches the power supply voltage required by the NAND particles 42 according to the adjustment signal, so that adaptive adjustment of the power supply voltage of the NAND particles 42 is realized, and the risk that the NAND particles 42 are damaged due to overhigh power supply voltage is avoided; in addition, the output power supply voltage can be automatically adjusted in the embodiment, the NAND particles 42 of different types do not need to be adjusted repeatedly by manpower, so that the fixed output power supply voltage is adapted, the manpower resource is saved, the requirement on the NAND particles 42 of multiple types can be better met, and the use efficiency of the disk is improved.
The embodiment of the present invention further provides a storage device, such as an SSD, which includes a memory and at least one processor, where the memory stores a computer program, and the processor is configured to execute the computer program to implement the flash memory voltage adaptive adjustment method of the foregoing embodiment.
The memory may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created according to use of the computer device (such as a power supply voltage of the NAND particles, etc.), and the like. Further, the memory may include high speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other volatile solid state storage device.
The embodiment of the invention also provides a computer-readable storage medium, wherein a machine executable instruction is stored in the computer-readable storage medium, and when the machine executable instruction is called and executed by a processor, the computer executable instruction causes the processor to execute the steps of the flash memory voltage self-adaptive adjusting method of the embodiment.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method can be implemented in other ways. The apparatus embodiments described above are merely illustrative and, for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems that perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, each functional module or unit in each embodiment of the present invention may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention or a part of the technical solution that contributes to the prior art in essence can be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a smart phone, a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk, and various media capable of storing program codes.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention.

Claims (10)

1. A method for self-adaptive regulation of flash memory voltage is characterized by comprising the following steps:
when the identification number of the NAND particles is read, determining the working voltage supported by the NAND particles based on the identification number of the NAND particles;
comparing a current supply voltage of the NAND particles to an operating voltage supported by the NAND particles to determine whether to perform a voltage adjustment;
and if the voltage is adjusted, sending a voltage adjusting signal to control a power supply switching module to adjust the power supply voltage of the NAND particles.
2. The adaptive flash memory voltage regulation method of claim 1, further comprising:
and if the identification number of the NAND particles cannot be read, sending the voltage adjusting signal to control the power supply switching module to adjust the power supply voltage of the NAND particles.
3. The adaptive flash memory voltage regulation method according to claim 1, wherein the determining whether to perform voltage regulation comprises:
if the current power supply voltage of the NAND particles does not match the working voltage supported by the NAND particles, determining to perform voltage adjustment;
and if the current power supply voltage of the NAND particles matches the working voltage supported by the NAND particles, determining not to perform voltage adjustment.
4. The adaptive flash memory voltage regulation method of claim 1, further comprising:
and after the power supply voltage of the NAND particles is adjusted, restarting the NAND particles to access the adjusted power supply voltage to the NAND particles, and solidifying the adjusted power supply voltage.
5. A flash memory voltage adaptive regulation system, comprising:
the storage main control unit is used for determining the working voltage supported by the NAND particles based on the identification numbers of the NAND particles when the identification numbers of the NAND particles are read; comparing a current supply voltage of the NAND particles to an operating voltage supported by the NAND particles to determine whether to adjust the supply voltage; if the power supply voltage needs to be adjusted, a voltage adjustment signal is sent;
and the power supply switching module is used for receiving the voltage adjusting signal so as to adjust the current power supply voltage of the NAND particles.
6. The flash memory voltage adaptive adjustment system according to claim 5, wherein the storage main controller is further configured to send the voltage adjustment signal if the identification number of the NAND particle cannot be read, so as to control the power switching module to adjust a current power supply voltage of the NAND particle.
7. The adaptive flash memory voltage regulation system according to claim 5 or 6, wherein the power switching module comprises a power conversion unit, a switching device, an inductor, a first resistor, a second resistor and a third resistor;
one end of the power supply conversion unit is connected with one end of the inductor, one end of the first resistor, one end of the second resistor and one end of the third resistor respectively, and the other end of the power supply conversion unit is connected with a power supply voltage;
the other end of the inductor is connected with one end of the first resistor, the other end of the first resistor is connected with one end of the second resistor, one end of the second resistor is also connected with one end of the third resistor, and the other end of the second resistor is grounded;
the other end of the third resistor is used for being grounded through the switching device;
the switching device is used for connecting the storage master control, and the storage master control is used for sending the voltage adjusting signal to control the switching device to be conducted so as to adjust the feedback voltage signal received by the power supply conversion unit;
the power supply conversion unit is used for outputting the working voltage supported by the NAND particles according to the state of the feedback voltage signal.
8. The adaptive flash memory voltage regulation system according to claim 5 or 6, wherein the power switching module comprises two power supply voltage branches for providing a VCC voltage, and is configured to switch a current power supply voltage branch to another power supply voltage branch for outputting a power supply voltage when receiving the voltage regulation signal.
9. A storage device, characterized in that the storage device comprises a memory and at least one processor, the memory storing a computer program, the processor being configured to execute the computer program to implement the flash memory voltage adaptive adjustment method according to any one of claims 1-4.
10. A computer storage medium, characterized in that it stores a computer program which, when executed, implements the flash memory voltage adaptive adjustment method according to any one of claims 1-4.
CN202210749007.8A 2022-06-28 2022-06-28 Self-adaptive flash memory voltage adjusting method and system and storage device Pending CN115129248A (en)

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CN202210749007.8A CN115129248A (en) 2022-06-28 2022-06-28 Self-adaptive flash memory voltage adjusting method and system and storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210749007.8A CN115129248A (en) 2022-06-28 2022-06-28 Self-adaptive flash memory voltage adjusting method and system and storage device

Publications (1)

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CN115129248A true CN115129248A (en) 2022-09-30

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