CN115128423A - Heavy ion irradiation influence beta-Ga 2 O 3 Method for simulating electrical performance of MOSFET device - Google Patents
Heavy ion irradiation influence beta-Ga 2 O 3 Method for simulating electrical performance of MOSFET device Download PDFInfo
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Abstract
The invention provides a method for influencing beta-Ga by heavy ion irradiation 2 O 3 A method of electrochemical performance of a MOSFET device, comprising: doping the epitaxial layer with beta-Ga of the donor Si element 2 O 3 Carrying out heavy ion irradiation with different fluence at room temperature; detecting beta-Ga before and after heavy ion irradiation 2 O 3 Monoclinic structure, flexural vibration, tensile mode optical properties and chemical bonding state of the epitaxial wafer; summarizing the experimental data obtained in the step S2 to obtain the heavy ion irradiation beta-Ga 2 O 3 Point defects generated after the wafer is epitaxial; introducing the point defect generated in step S3 into beta-Ga 2 O 3 In the MOSFET model, the output simulates an electrical performance curve. The invention is prepared by mixing beta-Ga 2 O 3 Irradiation study of epitaxial wafers and beta-Ga 2 O 3 Simulation studies of MOSFET devices were combined,for beta-Ga 2 O 3 The radiation-resistant mechanism research of the MOSFET device produces remarkable effects.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a heavy ion irradiation influence beta-Ga 2 O 3 Method of electrochemical performance of MOSFET devices.
Background
Gallium oxide (Ga) 2 O 3 ) Has a wide band gap of about 4.4-5.3eV, and is one of representative wide band gap semiconductor materials. Ga 2 O 3 Having a plurality of different polymorphs, and different polymorphs having different structural symmetries and anisotropies, wherein the beta phase has a monoclinic crystal structure, the most thermodynamically stable phase, and most of the research in recent years has focused on beta-Ga 2 O 3 . Reacting beta-Ga 2 O 3 When applied to space environments, materials and devices are generally exposed to various types of particle and radiation exposure, when beta-Ga 2 O 3 When the material is irradiated by low-energy heavy ions, particles can be deposited in the material to form a Bragg peak, and displacement defects such as single vacancy, interstitial atoms and the like are generated, and the physical and chemical properties of the material can be obviously influenced by the defects.
Recently, beta-Ga 2 O 3 The ultra-wide bandgap oxide semiconductor attracts great attention as a device for future power and photoelectric detectors, and beta-Ga 2 O 3 MOSFETs (Metal-Oxide-Semiconductor Field-Effect transistors) are commonly used as beta-Ga 2 O 3 One of the devices. In order to achieve high performance and high reliability of semiconductor devices, it is important to control crystal defects, which may even result in leakage currents and lower breakdown voltages, as these defects may have a negative and damaging effect on device performance. Therefore, it is important to characterize defects in the crystal and understand their mechanism of formation, but there is currently little research associated with this and it is not certain which particular defects are the primary source of transistor instability.
Disclosure of Invention
The invention solves the problem of how to provide a heavy ionIrradiation of beta-Ga 2 O 3 The electrochemical performance of MOSFET devices was investigated as to which specific defects were the major source of transistor instability.
To solve at least one of the above problems, the present invention provides a heavy ion irradiation method for affecting β -Ga 2 O 3 A method of electrochemical performance of a MOSFET device, comprising the steps of:
step S1, doping the epitaxial layer with beta-Ga of donor Si element 2 O 3 The epitaxial wafer is washed, and then the heavy ion irradiation with different fluence is carried out at room temperature;
step S2, detecting beta-Ga before and after heavy ion irradiation 2 O 3 Monoclinic structure, flexural vibration, tensile mode optical properties and chemical bonding state of the epitaxial wafer;
step S3, summarizing the experimental data obtained in the step S2 to obtain heavy ion irradiation beta-Ga 2 O 3 Point defects generated after the wafer is epitaxial and the derivation process thereof;
step S4 of introducing the point defects generated in the step S3 into beta-Ga 2 O 3 In the MOSFET model, a simulated electrical performance curve is output and analyzed.
Preferably, the heavy ion irradiation is N ion irradiation.
Preferably, in the step S1, the energy of the N ion irradiation is 400keV, and the particle flux is 1 × 10 13 atom cm-2·s -1 The particle fluence is 5X 10 15 ions/cm 2 、5×10 16 ions/cm 2 And 5X 10 17 ions/cm 2 。
Preferably, in the step S2, the beta-Ga content before and after heavy ion irradiation is detected 2 O 3 The monoclinic structure, the bending vibration and the stretching mode of the epitaxial wafer are set to 532nm in excitation wavelength and the test range is 100-800cm -1 Resolution was set to 0.5cm -1 。
Preferably, in the step S2, a 325nm He-Cd laser with the optical power of 35mW is used for researching beta-Ga before and after heavy ion irradiation 2 O 3 Optical properties of the epitaxial wafer.
Preferably, the beta-Ga is 2 O 3 The PL light from the epitaxial wafer was directed onto a Jobin Yvon Triax320 monochromator and then recorded by a Hamamatsu Si photomultiplier using a lock-in amplifier synchronized with a 20Hz photointerrupter to improve the signal-to-noise ratio.
Preferably, in the step S2, the beta-Ga before and after heavy ion irradiation is detected by X-ray photoelectron spectroscopy 2 O 3 The epitaxial wafer was chemically bonded using a monochromatic aluminum target X-ray source and standard carbon elemental binding energy calibrated at 284.8eV as a reference.
Preferably, in the step S3, the beta-Ga after heavy ion irradiation is analyzed by comparing the test results of X-ray photoelectron spectroscopy 2 O 3 Point defects in the material.
Preferably, in the step S4, β -Ga is found in a simulation example of the silvaco TCAD semiconductor simulation software 2 O 3 And the MOSFET model introduces the point defects analyzed in the step S3, outputs a simulated electrical property curve and analyzes the curve.
Preferably, simulation is performed using the Atlas and Athena modules in the silvaco TCAD semiconductor simulation software.
The invention dopes beta-Ga doped with donor Si element under different ion fluence conditions 2 O 3 The epitaxial wafer is irradiated with N ions, which can be in beta-Ga 2 O 3 Different point defects are generated on the material, and then the beta-Ga is analyzed before and after N ion irradiation 2 O 3 The change of the properties in the material can obtain the point defect condition, and the point defect obtained by analysis is introduced into the beta-Ga 2 O 3 Analyzing beta-Ga before and after different point defects are introduced in MOSFET model 2 O 3 Electrochemical performance of MOSFET model to obtain different point defect pairs of beta-Ga 2 O 3 The influence generated by the electrochemical performance of the MOSFET model, and different point defects correspond to N ion irradiation with different ion fluences, so that the N ion irradiation with different ion fluences on beta-Ga can be obtained 2 O 3 The effects produced by the MOSFET model; the invention is prepared by reacting beta-Ga 2 O 3 Irradiation study of epitaxial wafers and beta-Ga 2 O 3 Simulation research of MOSFET device is combined to provide N ion irradiation and beta-Ga 2 O 3 Relationship between MOSFET device Performance for beta-Ga 2 O 3 The radiation-resistant mechanism research of the MOSFET device produces remarkable effects.
Drawings
FIG. 1 shows the effect of heavy ion irradiation on beta-Ga in an example of the present invention 2 O 3 A flow chart of a method of electrochemical performance of a MOSFET device;
FIG. 2 shows beta-Ga before and after N-particle irradiation in an example of the present invention 2 O 3 PL broad spectrum graph and fitting result graph of epitaxial wafer;
FIG. 3 shows beta-Ga before and after N-particle irradiation in an example of the present invention 2 O 3 XPS fitting result graph of epitaxial wafer;
FIG. 4 shows β -Ga in an example of the present invention 2 O 3 Graph of electrochemical performance before and after introduction of point defects in MOSFETs.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, specific embodiments thereof are described in detail below.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict. The terms "comprising," "including," "containing," and "having" are intended to be inclusive, i.e., that additional steps and other ingredients may be added without affecting the result. The above terms encompass the terms "consisting of … …" and "consisting essentially of … …". Materials, equipment and reagents are commercially available unless otherwise specified.
The embodiment of the invention provides a heavy ion irradiation influence beta-Ga 2 O 3 A method of electrochemical performance of a MOSFET device, as shown in fig. 1, comprising the steps of:
step S1, doping the epitaxial layer with beta-Ga of donor Si element 2 O 3 The epitaxial wafer is washed, and then the heavy ion irradiation with different fluence is carried out at room temperature;
step S2, detecting beta-Ga before and after heavy ion irradiation 2 O 3 Monoclinic structure, flexural vibration, tensile mode optical properties and chemical bonding state of the epitaxial wafer;
step S3, summarizing the experimental data obtained in the step S2 to obtain heavy ion irradiation beta-Ga 2 O 3 Point defects generated after the wafer is epitaxial and the derivation process thereof;
step S4 of introducing the point defects generated in the step S3 into beta-Ga 2 O 3 And in the MOSFET model, outputting a simulated electrical performance curve and analyzing.
Wherein, in step S1, the epitaxial layer is doped with beta-Ga of donor Si element 2 O 3 The epitaxial wafer is cut into blocks with the same size for the research under different heavy ion irradiation conditions, and the cut beta-Ga 2 O 3 The epitaxial wafer of (2) was subjected to ultrasonic treatment with acetone and then washed with distilled water to remove impurities on the surface thereof. Washing the beta-Ga 2 O 3 The epitaxial wafer of (1) was subjected to N ion irradiation of different fluences at an energy of 400eV in a tandem van der graff accelerator (university of beijing) under room temperature conditions. Wherein the particle flux is 1 × 10 13 atom cm-2·s -1 The particle fluence is 5X 10 15 ions/cm 2 、5×10 16 ions/cm 2 And 5X 10 17 ions/cm 2 。
Pure semiconductor materials are not conductive at room temperature, but require doping with donor elements to make the semiconductor conductive by doping with beta-Ga 2 O 3 The epitaxial layer of the epitaxial wafer of (1) is doped with an Si element capable of supplying valence electrons to cause beta-Ga 2 O 3 The epitaxial wafer is conductive, and the index of the epitaxial wafer can be conveniently detected subsequently. Adopts N ion irradiation with different particle fluences to enable beta-Ga 2 O 3 The material generates different point defects, and the corresponding situation of the particle fluence and the point defects can be researched.
In step S2, beta-Ga is irradiated before and after N ion irradiation 2 O 3 Monoclinic structure, flexural vibration, tensile mode optical properties and chemical bonding state of epitaxial waferAnd (6) detecting.
Monitoring beta-Ga before and after N ion irradiation by using InVia-Reflex tip enhanced laser confocal Raman spectrum system 2 O 3 The monoclinic structure, flexural vibration and tensile mode of the epitaxial wafer, wherein the excitation wavelength was set to 532nm, and the test range was 100-800cm -1 Resolution was set to 0.5cm -1 。
Research on beta-Ga before and after N ion irradiation by using 325nm He-Cd laser with optical power of 35mW 2 O 3 Optical properties of epitaxial wafer, detection of beta-Ga 2 O 3 Photoluminescence (PL) from the epitaxial wafer was directed onto a Jobin Yvon Triax320 monochromator and then recorded by a Hamamatsu Si photomultiplier and a lock-in amplifier synchronized with a 20Hz photointerrupter was used to improve the signal-to-noise ratio.
Detection of beta-Ga before and after N ion irradiation by X-ray photoelectron spectroscopy (XPS) 2 O 3 The epitaxial wafer was chemically bonded and reference was made to a monochromatic aluminum target X-ray source and standard carbon elemental binding energy calibrated at 284.8 eV.
In step S3, the result obtained by the detection in step S2 is analyzed, and the beta-Ga ions irradiated by N ions with different particle injection quantities are analyzed 2 O 3 Which point defects are generated by the epitaxial wafer. By comparing and analyzing the detection results before and after N particle irradiation, the beta-Ga can be analyzed 2 O 3 The epitaxial wafer generates point defects, so that the corresponding relation between the particle fluence irradiated by the N particles and the generated point defects is obtained.
In step S4, the beta-Ga is found in the simulation example of the silvaco TCAD semiconductor simulation software 2 O 3 The MOSFET model is analyzed by using Atlas and Athena modules in software, point defects obtained by analysis in the step S3 are introduced by using trap parameters, discrete trap energy levels are set by e.level, degradation factors of the trap energy levels are defined by degen.fac, the degradation factors are used for calculating density, and sign and sig define trap capture cross sections for electrons or holes. Through simulation, the beta-Ga before and after different defect points are introduced is output 2 O 3 The electrical performance curve of the MOSFET model,analyzing the influence of the defect point on the electrical property, and analyzing the irradiation condition of N particles with different particle fluence conditions on beta-Ga according to the defect point condition generated under the irradiation condition of N ions with different particle fluence 2 O 3 The effect of the electrical properties of the MOSFET device.
By doping beta-Ga of donor Si element under different ion fluence conditions 2 O 3 The epitaxial wafer is irradiated with N ions and can be irradiated with beta-Ga 2 O 3 Different point defects are generated on the material, and then the beta-Ga is analyzed before and after N ion irradiation 2 O 3 The change of the properties in the material can obtain the point defect condition, and the point defect obtained by analysis is introduced into the beta-Ga 2 O 3 Analyzing beta-Ga before and after different point defects are introduced in MOSFET model 2 O 3 Electrochemical performance of MOSFET model to obtain different point defect pairs beta-Ga 2 O 3 The influence generated by the electrochemical performance of the MOSFET model, and different point defects correspond to N ion irradiation with different ion fluences, so that the N ion irradiation with different ion fluences on beta-Ga can be obtained 2 O 3 The effects produced by the MOSFET model; by reacting beta-Ga 2 O 3 Irradiation study of epitaxial wafers and beta-Ga 2 O 3 Simulation research of MOSFET device is combined to provide N ion irradiation and beta-Ga 2 O 3 Relationship between MOSFET device Performance for beta-Ga 2 O 3 The radiation-resistant mechanism research of the MOSFET device produces remarkable effects.
The following examples are given to illustrate the effect of heavy ion irradiation on beta-Ga 2 O 3 The method for simulating the electrical performance of the MOSFET device comprises the following steps:
examples
1.1 doping the epitaxial layer with beta-Ga of the donor Si element 2 O 3 The epitaxial wafer of (1) was cut into small pieces of uniform size, sonicated in acetone, washed with distilled water, and irradiated with N particles of 400eV at room temperature to beta-Ga 2 O 3 The epitaxial wafer (2) was subjected to an irradiation test in which the particle flux of N ions was 1X 10 13 atom cm-2·s -1 The particle fluence is respectively setIs 5 x 10 15 ions/cm 2 、5×10 16 ions/cm 2 And 5X 10 17 ions/cm 2 ；
1.2 monitoring beta-Ga before and after N ion irradiation in an InVia-Reflex tip enhanced laser confocal Raman spectrum system 2 O 3 The monoclinic structure, the bending vibration and the tensile mode of the epitaxial wafer, wherein the detection conditions are as follows: the excitation wavelength is set to 532nm, and the test range is 100-800cm -1 Resolution was set to 0.5cm -1 (ii) a Study of beta-Ga before and after N ion irradiation using 325nm He-Cd laser with optical power of 35mW 2 O 3 Optical properties of epitaxial wafer, detection of beta-Ga 2 O 3 PL light from the epitaxial wafer was directed onto a Jobin Yvon Triax320 monochromator, then recorded by a Hamamatsu Si photomultiplier, and the signal-to-noise ratio was increased using a lock-in amplifier synchronized with a 20Hz photointerrupter; detection of beta-Ga before and after N ion irradiation by XPS 2 O 3 The epitaxial wafer was chemically bonded and reference was made to a monochromatic aluminum target X-ray source and standard carbon elemental binding energy calibrated at 284.8 eV.
1.3, summarizing the experimental data obtained in the step 1.2, and analyzing beta-Ga before and after N ion irradiation 2 O 3 Variation of epitaxial wafer to determine beta-Ga 2 O 3 Point defects generated from an epitaxial wafer, wherein FIG. 2 shows beta-Ga before and after N ion irradiation 2 O 3 PL spectra of the epitaxial wafer, and the results of fitting under different particle fluence conditions, a) in FIG. 2 is the PL broad spectrum before and after irradiation, from which it can be seen that β -Ga 2 O 3 The epitaxial wafer showed a luminescence peak with a span of 300-600nm for beta-Ga 2 O 3 The luminescence peaks of the epitaxial wafer fit a UV PL band of 365nm (3.39eV) and a blue PL band of 410nm (3.02 eV). In combination with the results of optical transition energy levels calculated by Quoc et al using the first principle, the UV band peak is attributed to the self-trapped exciton, formed by GaO 4 A tetrahedral complex and a self-trapped cavity; the blue emission peak is derived from a donor-acceptor pair (DAP) recombination emission band of electrons in the donor impurity and holes in the acceptor impurity, wherein the donor band is defined by V o Formed by a receptor band of V Ga2 1- And (4) forming. B) in FIG. 2 and c) in FIG. 2 are the particle fluence at 5X 10 15 ions/cm 2 And 5X 10 17 ions/cm 2 Under the conditions, the PL intensity changes with the change of the irradiation particle fluence, and the PL peak significantly increases with the irradiation of N particles at a low particle fluence, but the PL peak conversely decreases with the increase of the particle fluence, as can be seen from the graph. This is mainly due to the fact that, under low particle fluence conditions, single-vacancy defects such as V cause blue emission o And V Ga2 1- Will increase significantly, leading to an increase in the intensity of the PL peak, however, as the particle fluence increases, a large number of N ions will enter the material and participate in the bonding, where unstable V o The defect is likely to be substituted by N ion to form No 1- Defect, and V o The defect derivatization process causes a quenching effect, resulting in a decrease in the intensity of the PL peak. FIG. 3 shows beta-Ga before and after N ion irradiation 2 O 3 XPS fitting results for N1s in epitaxial wafers, where a) in FIG. 3 is unirradiated and the ion fluence is 5X 10 15 ions/cm 2 Results under the conditions, b) in FIG. 3 is fluence of 5X 10 17 ions/cm 2 As seen from FIG. 3, there are 3 sub-peaks in each of a) in FIG. 3 and b) in FIG. 3, wherein the peak around 398.4nm is the peak of N atom, and the other two peaks correspond to Ga-N and No, respectively 1- Defect, with increasing flux of particles, a fraction of N ions replaces V o Defect, which is consistent with the PL results shown in FIG. 2, further demonstrates particle fluence on β -Ga 2 O 3 The effect of defects in the epitaxial wafer.
1.4 finding beta-Ga from simulation example of silvaco TCAD semiconductor simulation software 2 O 3 MOSFET model with trap parameter induced V o 、V Ga2 1 And No 1- Defects, wherein e.level in the statement is used to set discrete trap levels, degen.fac is used to define degradation factors for trap levels, and may also be used to calculate density, sign and sigp are used to define trap trapping cross sections for electrons or holes, and output β -Ga before and after introduction into defects 2 O 3 Electrochemistry of MOSFET modelsThe performance curves are shown in fig. 4, where a) in fig. 4 is the transfer characteristic curve and b) in fig. 4 is the output characteristic curve. As can be seen from the figure, the transfer characteristic curve shows obvious negative drift after point defect introduction, and No 1- Has a drift degree significantly greater than V Ga 1 And V o (ii) a In addition, after the defect occurs, beta-Ga 2 O 3 The output characteristics of MOSFET are obviously improved, so that beta-Ga 2 O 3 The MOSFET device can be at a lower gate voltage V GS And the lower opening.
The introduction of point defects can be found to be applied to the beta-Ga by simulation 2 O 3 The electrical performance of the MOSFET device has a great negative effect, for example, the static power consumption of the device is increased by reducing the threshold voltage, and the voltage of the device is V at a certain range GS The signal is in an off state, but can be turned on after a defect occurs, so that a relevant logic error is caused, the leakage risk is increased, and even the whole system is in a fault.
Thus, heavy ion irradiation provided by embodiments of the present invention affects beta-Ga 2 O 3 The simulation method of the electrical performance of the MOSFET device can be used for obtaining that the beta-Ga is caused by the point defect caused by heavy ion irradiation 2 O 3 Threshold value of MOSFET device is negatively shifted, and extrinsic defect No 1- The most severe effect of (A) is, the simulation method is on beta-Ga 2 O 3 The research on the electrochemical performance of the MOSFET device and the application thereof in a space environment have obvious effects.
Although the present disclosure has been described above, the scope of the present disclosure is not limited thereto. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the spirit and scope of the present disclosure, and these changes and modifications are intended to be within the scope of the present disclosure.
Claims (10)
1. Heavy ion irradiation influences beta-Ga 2 O 3 A method of electrochemical performance of a MOSFET device, comprising the steps of:
step S1, doping the epitaxial layer with beta-Ga of donor Si element 2 O 3 The epitaxial wafer of (a) is subjected to a washing,then, carrying out heavy ion irradiation with different fluence at room temperature;
step S2, detecting beta-Ga before and after heavy ion irradiation 2 O 3 Monoclinic structure, flexural vibration, tensile mode optical properties and chemical bonding state of the epitaxial wafer;
step S3, summarizing the experimental data obtained in the step S2 to obtain heavy ion irradiation beta-Ga 2 O 3 Point defects generated after the wafer is epitaxial and the derivation process thereof;
step S4 of introducing the point defects generated in the step S3 into beta-Ga 2 O 3 And in the MOSFET model, outputting a simulated electrical performance curve and analyzing.
2. Heavy ion irradiation affecting beta-Ga according to claim 1 2 O 3 The method for the electrochemical performance of the MOSFET device is characterized in that the heavy ion irradiation is N ion irradiation.
3. Heavy ion irradiation affecting beta-Ga according to claim 2 2 O 3 Method for electrochemical performance of MOSFET device, characterized in that in step S1, the energy of N ion irradiation is 400keV, and the particle flux is 1 x 10 13 atom cm-2·s -1 The particle fluence is 5X 10 15 ions/cm 2 、5×10 16 ions/cm 2 And 5X 10 17 ions/cm 2 。
4. Heavy ion irradiation affecting beta-Ga according to claim 1 2 O 3 The method for detecting the electrochemical performance of the MOSFET device is characterized in that in the step S2, the beta-Ga before and after heavy ion irradiation is detected 2 O 3 When the monoclinic structure, the bending vibration and the stretching mode of the epitaxial wafer are adopted, the excitation wavelength is set to be 532nm, and the test range is 100-800cm -1 Resolution was set to 0.5cm -1 。
5. Heavy ion irradiation affecting beta-Ga according to claim 1 2 O 3 MOSFET device electrochemicalThe method of the chemical property is characterized in that in the step S2, a 325nm He-Cd laser with the optical power of 35mW is used for researching the beta-Ga before and after heavy ion irradiation 2 O 3 Optical properties of the epitaxial wafer.
6. Heavy ion irradiation affecting beta-Ga according to claim 5 2 O 3 Method for electrochemical performance of a MOSFET device, characterized in that said beta-Ga is introduced 2 O 3 The PL light from the epitaxial wafer was directed onto a Jobin Yvon Triax320 monochromator and then recorded by a Hamamatsu Si photomultiplier using a lock-in amplifier synchronized with a 20Hz photointerrupter to improve the signal-to-noise ratio.
7. Heavy ion irradiation affecting beta-Ga according to claim 1 2 O 3 The method for detecting the electrochemical performance of the MOSFET device is characterized in that in the step S2, beta-Ga before and after heavy ion irradiation is detected by an X-ray photoelectron spectroscopy analysis technology 2 O 3 The epitaxial wafer was chemically bonded using a monochromatic aluminum target X-ray source and standard carbon elemental binding energy calibrated at 284.8eV as a reference.
8. Heavy ion irradiation affecting beta-Ga according to claim 7 2 O 3 The method for analyzing the electrochemical performance of the MOSFET device is characterized in that in the step S3, the beta-Ga after heavy ion irradiation is analyzed by comparing the test results of X-ray photoelectron spectroscopy analysis 2 O 3 Point defects in the material.
9. Heavy ion irradiation affecting beta-Ga according to claim 1 2 O 3 Method for electrochemical performance of MOSFET device, characterized in that in step S4, β -Ga is found in simulation example of silvaco TCAD semiconductor simulation software 2 O 3 And introducing the point defects analyzed in the step S3 into the MOSFET model, outputting a simulated electrical performance curve, and analyzing.
10. According to the claimsSolution 9 of the influence of heavy ion irradiation on beta-Ga 2 O 3 The method for the electrochemical performance of the MOSFET device is characterized in that Atlas and Athena modules in silvaco TCAD semiconductor simulation software are used for simulation.
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