CN115125489A - Film coating method for semiconductor surface - Google Patents
Film coating method for semiconductor surface Download PDFInfo
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- CN115125489A CN115125489A CN202110322733.7A CN202110322733A CN115125489A CN 115125489 A CN115125489 A CN 115125489A CN 202110322733 A CN202110322733 A CN 202110322733A CN 115125489 A CN115125489 A CN 115125489A
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- semiconductor substrate
- semiconductor
- layer
- argon
- cleaning
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 97
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000007888 film coating Substances 0.000 title abstract description 5
- 238000009501 film coating Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 65
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000000151 deposition Methods 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 229910052786 argon Inorganic materials 0.000 claims abstract description 25
- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims abstract description 20
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000007789 gas Substances 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 12
- 238000005477 sputtering target Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 5
- JEMRNXVWRIBCRL-UHFFFAOYSA-N [Ar].CC Chemical compound [Ar].CC JEMRNXVWRIBCRL-UHFFFAOYSA-N 0.000 claims description 4
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 4
- 230000002035 prolonged effect Effects 0.000 abstract description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
Abstract
The invention discloses a film coating method for a semiconductor surface, which comprises the following steps: pre-cleaning the semiconductor substrate, and drying the pre-cleaned semiconductor substrate; placing the dried semiconductor substrate in a vacuum chamber, introducing argon gas into the vacuum chamber, and controlling the vacuum degree to be 2.0 × 10 ‑1 Pa; applying negative bias of 80-100V to the semiconductor substrate, starting a silicon target, and depositing a silicon layer on the surface of the semiconductor substrate; wherein the ion source power is 1.0kW to 1.5kW, the sputtering target power is 1.2kW to 1.5kW, and the deposition rate is
The deposition time is 5min to 8 min; introducing argon and methane into the vacuum chamber, and controlling the vacuum degree to be 5.0 multiplied by 10 ‑1 Pa; a negative bias of 50V is applied to the semiconductor substrate,depositing a diamond-like carbon layer on the surface of the silicon layer at an angle of 0 degrees; wherein the ion source power is 2.5 kW-3.0 kW, and the deposition time is 10 min. By adopting the technical scheme of the invention, the thicknesses of the silicon layer and the DLC layer can be reasonably proportioned, so that the wear resistance of the semiconductor is improved, and the service life of the semiconductor is prolonged.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a film coating method for the surface of a semiconductor.
Background
DLC (Diamond-like carbon) film is an amorphous carbon film composed of carbon elements, has the excellent characteristics of diamond and graphite, has high hardness, high elastic modulus, low friction factor, wear resistance and good vacuum tribology characteristics, and also has high resistivity and good optical performance, and is very suitable for being used as a wear-resistant coating.
The traditional technical scheme is that a silicon layer and a DLC layer are often used in a matching way, namely, a layer of silicon is plated between a semiconductor substrate and the DLC layer, and the silicon layer has good adhesion property, so that the adhesion between the semiconductor substrate and the DLC layer can be improved.
However, the ratio of the thickness of the silicon layer to the thickness of the DLC layer is very important for the hardness and wear performance of the film, and an unreasonable thickness ratio will result in poor wear resistance of the semiconductor and affect the service life of the semiconductor, so how to reasonably match the thicknesses of the silicon layer and the DLC layer becomes an important technical problem to be solved.
Disclosure of Invention
The technical problem to be solved by the embodiments of the present invention is to provide a method for coating a film on a semiconductor surface, which can reasonably match the thicknesses of a silicon layer and a DLC layer, thereby improving the wear resistance of the semiconductor and prolonging the service life of the semiconductor.
In order to solve the above technical problem, an embodiment of the present invention provides a method for plating a film on a semiconductor surface, including:
pre-cleaning the semiconductor substrate, and drying the pre-cleaned semiconductor substrate;
placing the dried semiconductor substrate in a vacuum chamber, introducing argon gas into the vacuum chamber, and controlling the vacuum degree to be 2.0 × 10 -1 Pa; wherein the flow rate of the argon gas is 100 sccm;
applying negative bias of 80-100V to the semiconductor substrate, starting a silicon target, and depositing a silicon layer on the surface of the semiconductor substrate; wherein the power of the ion source is 1.0kW to 1.5kW, the power of the sputtering target is 1.2kW to 1.5kW, and the deposition rate is
The deposition time is 5 min-8 min;
introducing argon and methane into the vacuum chamber, and controlling the vacuum degree to be 5.0 multiplied by 10 -1 Pa; wherein the flow rate of argon is 100sccm, and the flow rate of methane is 60 sccm;
applying negative bias voltage of 50V to the semiconductor substrate, and depositing a diamond-like carbon layer on the surface of the silicon layer at an angle of 0 degree; wherein the ion source power is 2.5 kW-3.0 kW, and the deposition time is 10 min.
Further, the pre-cleaning the semiconductor substrate and drying the pre-cleaned semiconductor substrate specifically include:
pre-cleaning the semiconductor substrate by an ion beam etching method;
and drying the semiconductor substrate after the pre-cleaning.
Further, the pre-cleaning of the semiconductor substrate by the ion beam etching method specifically includes:
and (3) adopting an ion beam etching method and adopting argon plasma, argon-oxygen mixed gas or argon-ethane mixed gas to pre-clean the surface of the semiconductor substrate.
Further, the thickness ratio of the silicon layer to the diamond-like carbon layer is 1: 4.
Compared with the prior art, the embodiment of the invention provides a film coating method for the surface of a semiconductor, which comprises the steps of firstly, pre-cleaning a semiconductor substrate, and drying the pre-cleaned semiconductor substrate; then, the dried semiconductor substrate was placed in a vacuum chamber, argon gas was introduced into the vacuum chamber, and the degree of vacuum was controlled to 2.0X 10 -1 Pa, wherein the flow rate of argon is 100 sccm; applying 80-100V negative bias to the semiconductor substrate, starting the silicon target, and depositing a silicon layer on the surface of the semiconductor substrate, wherein the ion source power is 1.0-1.5 kW, the sputtering target power is 1.2-1.5 kW, and the deposition rate is
The deposition time is 5 min-8 min; finally, argon and methane were introduced into the vacuum chamber, and the degree of vacuum was controlled to 5.0X 10 -1 Pa, wherein the flow rate of argon is 100sccm, and the flow rate of methane is 60 sccm; applying a negative bias voltage of 50V to the semiconductor substrate to deposit a diamond-like carbon layer on the surface of the silicon layer at an angle of 0 degree, wherein the diamond-like carbon layer is separated from the silicon layerThe power of a sub source is 2.5kW to 3.0kW, and the deposition time is 10 min; therefore, the thicknesses of the silicon layer and the DLC layer can be reasonably proportioned, the wear resistance of the semiconductor is improved, and the service life of the semiconductor is prolonged.
Drawings
FIG. 1 is a flow chart of a preferred embodiment of a method for plating a semiconductor surface according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without any inventive step, are within the scope of the present invention.
The embodiment of the present invention provides a method for plating a film on a semiconductor surface, which is a flowchart of a preferred embodiment of the method for plating a film on a semiconductor surface according to the present invention, as shown in fig. 1, and the method includes steps S11 to S15:
step S11, pre-cleaning the semiconductor substrate, and drying the pre-cleaned semiconductor substrate;
step S12, placing the dried semiconductor substrate in a vacuum chamber, introducing argon gas into the vacuum chamber, and controlling the vacuum degree to be 2.0 × 10 -1 Pa; wherein the flow rate of the argon gas is 100 sccm;
step S13, applying negative bias voltage of 80-100V to the semiconductor substrate, starting the silicon target, and depositing a silicon layer on the surface of the semiconductor substrate; wherein the power of the ion source is 1.0kW to 1.5kW, the power of the sputtering target is 1.2kW to 1.5kW, and the deposition rate is
The deposition time is 5min to 8 min;
step S14, introducing argon and methane into the vacuum chamber, and controlling the vacuum degree to be 5.0 multiplied by 10 -1 Pa; wherein the flow rate of argon is 100sccm, and the flow rate of methaneIn an amount of 60 sccm;
step S15, applying negative bias voltage of 50V to the semiconductor substrate, and depositing a diamond-like carbon layer on the surface of the silicon layer at an angle of 0 degree; wherein the ion source power is 2.5 kW-3.0 kW, and the deposition time is 10 min.
As an improvement of the scheme, the thickness ratio of the silicon layer to the diamond-like carbon layer is 1: 4.
In specific implementation, firstly, a semiconductor substrate to be coated is subjected to pre-cleaning treatment, and the semiconductor substrate subjected to the pre-cleaning treatment is dried; then, the dried semiconductor substrate was placed in a vacuum chamber, argon gas was introduced into the vacuum chamber at a flow rate of 100sccm, and the degree of vacuum in the vacuum chamber was controlled to 2.0X 10 by evacuation -1 Pa, applying a negative bias voltage in the range of 80V to 100V on the semiconductor substrate, starting the silicon target, depositing a silicon layer (i.e., Si layer) on the surface of the semiconductor substrate by a sputtering method, the Si layer being deposited with an ion source power in the range of 1.0kW to 1.5kW, a sputtering target power in the range of 1.2kW to 1.5kW, and a deposition rate generally in the range of
In the range of 5min to 8min for deposition duration; finally, argon and methane (CH) were simultaneously introduced into the vacuum chamber 4 ) And the flow rate of argon is 100sccm, CH 4 At a flow rate of 60sccm, and controlling the degree of vacuum in the vacuum chamber to be 5.0X 10 by evacuation -1 Pa, applying a negative bias voltage of 50V on the semiconductor substrate, depositing a diamond-like carbon layer (DLC layer) on the surface of the Si layer by a sputtering method at an angle of 0 degree (i.e., the angle between the sputtering target and the bottom base of the semiconductor substrate is 0 degree), the DLC layer being deposited with an ion source power in the range of 2.5kW to 3.0kW and a deposition duration of 10 min; wherein the thickness ratio of the Si layer deposited on the surface of the semiconductor substrate to the DLC layer is 1: 4.
It should be noted that, the conventional DLC layer is deposited at an angle of 45 degrees, although the DLC layer has a good corrosion resistance, during the deposition at an angle of 45 degrees, the energy of carbon atoms is lost, which affects the normal wear of the DLC film, and the DLC film is deposited at an angle of 0 degreesThe DLC layer is deposited, because the energy of carbon atoms is mainly concentrated in the vertical direction in the forming process, the DLC layer has good coverage by the force in the horizontal direction, so that the deposited DLC layer is harder and has better wear resistance, and experiments show that the wear depth of a nano pressure head wear test of the 0-degree deposited DLC layer is less than that of the nano pressure head wear test of the DLC layer
In addition, the thickness ratio of the Si layer to the DLC layer is also very important for the hardness and the wear resistance of the film, when the DLC layer is deposited at an angle of 45 degrees, the thickness ratio of the Si layer to the DLC layer is 1:2 under a certain total thickness, the DLC layer is deposited at an angle of 0 degrees, the thickness ratio of the Si layer to the DLC layer is adjusted from 1:2 to 1:4, and other properties of the film are not changed, so that the wear resistance of the semiconductor is correspondingly improved and the service life of the semiconductor is prolonged by reasonably proportioning the thicknesses of the Si layer and the DLC layer.
Meanwhile, the high temperature resistant range of the semiconductor is also increased, the high temperature resistant range of the semiconductor coated by the traditional method is 230-350 ℃, and the high temperature resistant range of the semiconductor coated by the embodiment of the invention is 380-440 ℃.
In another preferred embodiment, the pre-cleaning the semiconductor substrate and drying the pre-cleaned semiconductor substrate specifically include:
pre-cleaning the semiconductor substrate by an ion beam etching method;
and drying the semiconductor substrate after the pre-cleaning.
As an improvement of the above scheme, the pre-cleaning of the semiconductor substrate by the ion beam etching method specifically includes:
and (3) adopting an ion beam etching method, and adopting argon plasma, argon-oxygen mixed gas or argon-ethane mixed gas to pre-clean the surface of the semiconductor substrate.
Specifically, with reference to the foregoing embodiment, when the semiconductor substrate to be film-coated is subjected to a pre-cleaning treatment, the semiconductor substrate may be subjected to a pre-cleaning treatment by using an ion beam etching method, and in the pre-cleaning process, any one of an argon plasma, an argon-oxygen mixed gas, and an argon-ethane mixed gas is usually adopted to perform an etching cleaning on the surface of the semiconductor substrate, and then the semiconductor substrate after the pre-cleaning treatment is subjected to a drying treatment, such as drying, or the semiconductor substrate is placed in a sealing box and subjected to a natural drying treatment for a certain time.
It should be noted that the pre-cleaning is to make the semiconductor substrate cleaner, which is beneficial for depositing a coating on the surface of the semiconductor substrate later.
In summary, the method for coating a film on a semiconductor surface according to the embodiments of the present invention can reasonably match the thicknesses of the Si layer and the DLC layer by adjusting the angle of the DLC layer during deposition and adjusting the thickness ratio of the Si layer to the DLC layer deposited on the semiconductor surface, thereby improving the wear resistance of the semiconductor and prolonging the service life of the semiconductor.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, several modifications and variations can be made without departing from the technical principle of the present invention, and these modifications and variations should also be regarded as the protection scope of the present invention.
Claims (4)
1. A method of coating a semiconductor surface, comprising:
pre-cleaning the semiconductor substrate, and drying the pre-cleaned semiconductor substrate;
placing the dried semiconductor substrate in a vacuum chamber, introducing argon gas into the vacuum chamber, and controlling the vacuum degree to be 2.0 × 10 -1 Pa; wherein the flow rate of the argon gas is 100 sccm;
applying negative bias of 80-100V to the semiconductor substrate, starting a silicon target, and depositing a silicon layer on the surface of the semiconductor substrate; wherein the power of the ion source is 1.0kW to 1.5kW, the power of the sputtering target is 1.2kW to 1.5kW, and the deposition rate is
The deposition time is 5 min-8 min;
introducing argon and methane into the vacuum chamber, and controlling the vacuum degree to be 5.0 multiplied by 10 -1 Pa; wherein the flow rate of argon is 100sccm, and the flow rate of methane is 60 sccm;
applying negative bias voltage of 50V to the semiconductor substrate, and depositing a diamond-like carbon layer on the surface of the silicon layer at an angle of 0 degree; wherein the ion source power is 2.5 kW-3.0 kW, and the deposition time is 10 min.
2. The method for plating a semiconductor surface according to claim 1, wherein the pre-cleaning of the semiconductor substrate and the drying of the pre-cleaned semiconductor substrate comprise:
pre-cleaning the semiconductor substrate by an ion beam etching method;
and drying the semiconductor substrate after the pre-cleaning.
3. The method for coating a semiconductor surface according to claim 2, wherein the pre-cleaning of the semiconductor substrate by ion beam etching comprises:
and (3) adopting an ion beam etching method and adopting argon plasma, argon-oxygen mixed gas or argon-ethane mixed gas to pre-clean the surface of the semiconductor substrate.
4. The method of coating a semiconductor surface according to any one of claims 1 to 3, wherein a thickness ratio of the silicon layer to the diamond-like carbon layer is 1: 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110322733.7A CN115125489A (en) | 2021-03-25 | 2021-03-25 | Film coating method for semiconductor surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110322733.7A CN115125489A (en) | 2021-03-25 | 2021-03-25 | Film coating method for semiconductor surface |
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| Publication Number | Publication Date |
|---|---|
| CN115125489A true CN115125489A (en) | 2022-09-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202110322733.7A Pending CN115125489A (en) | 2021-03-25 | 2021-03-25 | Film coating method for semiconductor surface |
Country Status (1)
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| CN (1) | CN115125489A (en) |
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2021
- 2021-03-25 CN CN202110322733.7A patent/CN115125489A/en active Pending
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