CN115117612A - Broadband millimeter wave magnetic electric dipole antenna based on SIW feed - Google Patents
Broadband millimeter wave magnetic electric dipole antenna based on SIW feed Download PDFInfo
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- CN115117612A CN115117612A CN202210655060.1A CN202210655060A CN115117612A CN 115117612 A CN115117612 A CN 115117612A CN 202210655060 A CN202210655060 A CN 202210655060A CN 115117612 A CN115117612 A CN 115117612A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a broadband millimeter wave magnetoelectric dipole antenna based on SIW feed, which comprises a substrate integrated waveguide SIW, wherein a PP plate and an upper dielectric substrate are sequentially arranged above the substrate integrated waveguide SIW, and the upper surface of the upper dielectric substrate is provided with two open-ended resonance rings and an H-shaped metal patch for loading the open-ended resonance rings; the substrate integrated waveguide SIW comprises an upper metal plate, a lower dielectric substrate and a grounding plate which are arranged from top to bottom in sequence, wherein the upper metal plate is provided with an hourglass-shaped gap; two metal blind holes are arranged on the upper layer metal plate and are respectively connected with the H-shaped metal patch and the upper layer metal plate structure. The impedance bandwidth of the antenna is 38.5 percent at minus 10dB, which is higher than the bandwidth of the same type of antenna. The gain of the invention is larger than 5.5dBi in the frequency band range, the maximum gain is about 7.5dBi, and the gain is stable. The invention can realize broadband millimeter waves only by using one layer of SIW structure and H-shaped metal patches, and has very important significance for 5G mobile communication.
Description
Technical Field
The invention relates to the field of antennas, in particular to a broadband millimeter wave magnetic electric dipole antenna based on SIW feeding.
Background
The 5G mobile communication has two frequency bands of Sub-6GHz and millimeter wave, but with the increase of terminal users, the Sub-6GHz frequency spectrum bandwidth becomes very crowded, the frequency spectrum resources are seriously deficient, and the frequency spectrum resources of the millimeter wave frequency band are rich, so that the problems can be effectively solved, and the broadband technology has important significance for fully playing the rich frequency spectrum resources of the millimeter wave.
The bandwidth, cross polarization and backward radiation of the magnetoelectric dipole antenna are low, the good selection for realizing the broadband millimeter wave antenna is realized, the millimeter wave magnetoelectric dipole antenna design adopting SIW rectangular gap coupling feed magnetoelectric dipole to realize broadband characteristics in millimeter waves is adopted in the text, the overall size of the antenna is small, the research and application of the SIW gap coupling feed broadband millimeter wave antenna provides the SIW butterfly-shaped gap coupling feed arched magnetoelectric dipole antenna in the text, the loss of the two antennas in millimeter wave frequency ranges is low, the integration is easy, and the bandwidth is about 30 percent. In summary, the bandwidth of the conventional SIW-fed magnetoelectric dipole antenna still has the possibility of further broadening.
Disclosure of Invention
In view of the above disadvantages in the prior art, the present invention provides a wideband millimeter wave electromagnetic dipole antenna based on SIW feeding with wider antenna bandwidth.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention is as follows: the device comprises a Substrate Integrated Waveguide (SIW), wherein a PP plate and an upper medium substrate are sequentially arranged above the Substrate Integrated Waveguide (SIW), the upper surface of the upper medium substrate is provided with two open resonance rings and an H-shaped metal patch for loading the open resonance rings, and the two open resonance rings are arranged in upper and lower grooves outside the H-shaped metal patch; the substrate integrated waveguide SIW comprises an upper metal plate, a lower dielectric substrate and a ground plate which are sequentially arranged from top to bottom, wherein an hourglass-shaped gap is formed in the upper metal plate, two metal blind holes are formed in the upper dielectric substrate and are respectively connected with an H-shaped metal patch and an upper metal patch, and the two metal blind holes are respectively connected between the waist parts at two sides of the hourglass-shaped gap.
Furthermore, the lower dielectric substrate of the substrate integrated waveguide SIW is provided with a plurality of metal through holes formed by the metal holes, and the plurality of metal through holes, the upper layer metal plate and the ground plate form an SIW structure.
Further, the H-shaped metal patch is provided with an H-shaped hollow-out portion, and the H-shaped hollow-out portion is provided with a step portion at one side close to the vertical symmetry axis.
Furthermore, the split ring resonator is a double-split ring resonator, and each split ring resonator comprises an outer split ring resonator connected with the H-shaped metal patch and an inner split ring resonator arranged opposite to the outer split ring resonator.
Furthermore, chamfers are arranged at four corners of the outer part of the H-shaped metal patch, the length of each chamfer is 0.8mm, and the width of each chamfer is 0.35 mm.
Further, H shape fretwork portion is provided with the ladder portion in the one side that is close to vertical symmetry axis, and the ladder portion is including the three ladder that connects gradually, and the vertical difference in height of every ladder is 0.2mm, 0.45mm, 0.4mm respectively, and the horizontal width difference of every ladder is 0.5mm, 0.3mm, 0.2mm respectively.
Further, outer opening resonant ring is including the first horizontal section of being connected with H shape metal patch, and the both ends of first horizontal section are equipped with consecutive and inside bending's first portion of bending, second portion of bending and third portion of bending respectively, and the angle of bending of every portion of bending is 90, and the end of third portion of bending is towards inner opening resonant ring, and outer opening resonant ring is character cut in bas-relief. The lengths of the first transverse section, the first bending part, the second bending part and the third bending part are respectively 1.0mm, 0.7mm, 0.45mm and 0.4mm, and the width of the outer opening resonant ring is 0.08 mm. The H-shaped metal patch is connected with the middle part of the first transverse section.
Furthermore, the inner opening resonance ring is C-shaped, and the C-shaped opening of the inner opening resonance ring faces the tail ends of the two third bending parts; the width of the inner opening resonance ring is 0.08 mm; the inner opening resonance ring comprises a second transverse section, two ends of the second transverse section are respectively provided with an inward fourth bending part, and the bending angle of the fourth bending part is 90 degrees; the lengths of the second transverse section and the fourth bend are 0.64mm and 0.17mm, respectively.
Furthermore, a connecting part connected with the H-shaped metal patch is arranged on the second transverse section, and the width of the connecting part is equal to that of the inner opening resonance ring; the length of the connecting part is 0.25 mm.
Furthermore, the upper dielectric substrate (1) and the lower dielectric substrate are PCB boards, and the grounding plate and the upper metal plate are copper clad plates.
Further, when the upper dielectric substrate and the lower dielectric substrate are installed, the geometric centers of the hourglass-shaped gap and the H-shaped metal patch are overlapped in a top view.
The invention has the beneficial effects that: the structure of the H-shaped metal patch is beneficial to antenna impedance matching. The bandwidth of the magnetoelectric dipole antenna in a millimeter wave frequency band is effectively widened. The structure of the split resonant ring is beneficial to widening the bandwidth of the antenna. The advantage of rich millimeter wave frequency spectrum resources can be fully exerted. The-10 dB impedance bandwidth of the antenna is 38.5 percent and is higher than the bandwidth of the same type of antenna. The gain of the invention is larger than 5.5dBi in the frequency band range, the maximum gain is about 7.5dBi, and the gain is more stable in the working frequency band range. The cross polarization of the E surface and the H surface of the antenna at the resonant frequency points of 24GHz and 30GHz is low, and the antenna has good radiation characteristics. The invention realizes broadband millimeter waves only by using one layer of SIW structure and the H-shaped metal patch of the loading opening resonance ring in mirror symmetry, and has very important significance for 5G mobile communication. The invention is only composed of two layers of medium substrates, the circuit process is simple to process, and the invention is suitable for large-scale processing; the invention has very low processing cost and is very suitable for integrated design and mass production of microwave and millimeter wave circuits.
Drawings
FIG. 1 is a schematic view of the overall configuration of the present invention;
FIG. 2 is a schematic view of the present invention with the upper dielectric substrate removed;
FIG. 3 is a top view of a lower dielectric substrate according to the present invention;
FIG. 4 is a top view of an upper dielectric substrate according to the present invention;
FIG. 5 is a schematic diagram of an open ended resonant ring of the present invention;
FIG. 6 is a diagram of S11 parametric simulation results in an embodiment of the present invention;
FIG. 7 is a diagram illustrating simulation results of gain (IEEE) parameters in an embodiment of the present invention;
FIG. 8 is an antenna radiation pattern at a resonant frequency of 24GHz in an embodiment of the present invention;
fig. 9 is an antenna radiation pattern when the resonant frequency point is 30GHz in the embodiment of the present invention.
The main part symbols in the figures are explained as follows:
1. an upper dielectric substrate; 2. h-shaped metal patches; 3. an hourglass-shaped gap; 4. an upper metal plate; 5. a lower dielectric substrate; 6. a metal blind hole; 7. a PP plate; 8. an open resonant ring; 9. a ground plate;
81. an outer open resonant ring; 811. a first transverse segment; 812. a first bending portion; 813. a second bending portion; 814. a third bent portion;
82. an inner open resonator ring; 821. a second transverse segment; 822. a fourth bend.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined in the appended claims, and all matters produced by the invention using the inventive concept are protected.
The broadband millimeter wave magnetic dipole antenna based on SIW feed comprises a substrate integrated waveguide SIW, a PP plate 7 and an upper dielectric substrate 1 are sequentially arranged above the substrate integrated waveguide SIW, and two open-ended resonant rings 8 and an H-shaped metal patch 2 for loading the open-ended resonant rings 8 are arranged on the upper surface of the upper dielectric substrate 1; the two parts are arranged in upper and lower grooves outside the H-shaped metal patch 2, and the split resonant ring 8 and the H-shaped metal patch are positioned on the same plane. The upper dielectric substrate 1, the upper metal plate 4 and the lower dielectric substrate 5 are equal in length and width, and the length and width are 7.38mm and 5.85mm respectively. The length of the H-shaped metal patch 2 is 3.87mm, the width of the H-shaped metal patch is 3.42mm, the width of the outer upper groove and the outer lower groove of the H-shaped metal patch is 1.17mm, and the depth of the outer upper groove and the outer lower groove of the H-shaped metal patch is 0.81 mm.
In this embodiment, four corners of the exterior of the H-shaped metal patch 2 are provided with chamfers, and the chamfers have a length of 0.8mm and a width of 0.35 mm.
In this embodiment, the substrate integrated waveguide SIW includes an upper metal plate 4, a lower dielectric substrate 5, and a ground plate 9, which are sequentially disposed from top to bottom, wherein an hourglass-shaped gap 3 is disposed on the upper metal plate 4, the height direction of the hourglass-shaped gap 3 is parallel to the length direction of the upper metal plate 4, two metal blind holes 6 are disposed on the upper dielectric substrate 1, and the two metal blind holes 6 are respectively connected to the metal patch 2 and the upper metal plate 4; two metal blind holes 6 are connected between the waist parts at two sides of the hourglass-shaped gap 3. The radius of the metal blind hole 6 is preferably 0.14mm, and the distance between the two metal blind holes 6 is preferably 1.35 mm. Preferably, the width of the hourglass-shaped gap 3 is 1.35mm, the height of the hourglass-shaped gap is 3.42mm, the vertical height of the upper base and the lower base is 0.59mm, and the sand leakage opening is 0.63 mm. The distance between the metallized blind hole 4 and the hourglass-shaped slot 3 has a significant influence on the matching of the antenna.
In this embodiment, the lower dielectric substrate 5 of the substrate integrated waveguide SIW is provided with a plurality of metal vias, and the plurality of metal vias, the upper metal plate 4 and the ground plate 9 form a SIW structure. The distance between the centers of the metal through holes is 0.8mm, the metal hole arrays preferably have 24 positions which are symmetrically distributed in a U shape, two rows of 10 positions are distributed in the transverse direction, and the radius of the metal holes is 0.25mm at 6 positions which are vertically distributed in the right side.
In the present embodiment, the H-shaped metal patch 2 is provided with an H-shaped hollow portion, and the H-shaped hollow portion is provided with a step portion at one side close to the vertical symmetry axis.
In this embodiment, the split ring resonator 8 is a double-split ring resonator, and each split ring resonator 8 includes an outer split ring resonator connected to the H-shaped metal patch 2 and an inner split ring resonator disposed opposite to the outer split ring resonator.
In this embodiment, the H-shaped hollow portion is provided with four step portions on a side close to the vertical symmetry axis, the four step portions are symmetrically provided with the step portions relative to the vertical and horizontal symmetry axes of the H-shaped hollow portion, the step portions include three steps connected in sequence, the vertical height difference of each step is 0.2mm, 0.45mm and 0.4mm, and the horizontal width difference of each step is 0.5mm, 0.3mm and 0.2 mm.
In this embodiment, the outer-opening resonant ring 81 includes a first transverse section 811 connected to the H-shaped metal patch 2, two ends of the first transverse section 811 are respectively provided with a first bending portion 812, a second bending portion 813 and a third bending portion 814 which are sequentially connected and bent inward, a bending angle of each bending portion is 90 °, a terminal of the third bending portion 814 faces the inner-opening resonant ring 82, and the outer-opening resonant ring 81 is in a shape of a Chinese character 'ao'. The first transverse section 811, the first bent portion 812, the second bent portion 813, and the third bent portion 814 have lengths of 1.0mm, 0.7mm, 0.45mm, and 0.4mm, respectively, and the width of the outer-opening resonance ring 81 is 0.08 mm. The H-shaped metal patch 2 is connected to the middle of the first transverse section 811.
In this embodiment, the inner open resonant ring 82 is "C" shaped, the "C" shaped opening of the inner open resonant ring 82 faces the ends of the two third bent portions 814, and the inner angle of the inner open resonant ring 82 is 90 °. The width of the inner open resonator ring 82 is 0.08 mm. The inner open resonator ring 82 includes a second transverse segment 821, and both ends of the second transverse segment 821 are respectively provided with an inward fourth bending portion 822, and the bending angle of the fourth bending portion 822 is 90 °. The second transverse segment 811 and the fourth bend 822 have lengths of 0.64mm and 0.17mm, respectively.
In this embodiment, the second transverse segment 821 is provided with a connection portion connected to the H-shaped metal patch 2, and the width of the connection portion is equal to the width of the inner open resonator ring. The length of the connecting part is 0.25 mm.
In this embodiment, the upper dielectric substrate 1 and the lower dielectric substrate 5 are PCB boards, and the ground plate 9 and the upper metal plate 4 are copper clad plates.
When the upper dielectric substrate 1 and the lower dielectric substrate 5 are installed, the geometric centers of the hourglass-shaped gap 3 and the H-shaped metal patch 2 are overlapped in a plan view.
In this embodiment, the feeding terminal is located at the front end of the substrate integrated waveguide SIW and is coupled to the upper metal plate 4 through the hourglass-shaped slot 3 close to the short-circuit end, and the hourglass-shaped slot 3 and the H-shaped metal patch 2 loading the open-ended resonant ring 8 have an important influence on the matching of the antenna.
In this embodiment, the wideband millimeter wave electromagnetic dipole antenna based on SIW feed models simulation experimental data in the electromagnetic simulation software CST, as shown in fig. 6 to 9:
fig. 6 is the simulation result of the S11 parameter in this embodiment, and it can be seen from the diagram that the-10 dB impedance bandwidth of the antenna is 38.5%, which is higher than the bandwidth of the same type of antenna.
Fig. 7 is a diagram of simulation results of gain (ieee) parameters of the antenna in this embodiment, and it can be seen from the diagram that the gains of the antenna in the frequency band range are all greater than 5.5dBi, the maximum gain is about 7.5dBi, and the gain is relatively stable in the operating frequency band range.
Fig. 8 and 9 are antenna radiation patterns of the antenna of this embodiment at resonant frequency points 24GHz and 30GHz, respectively, and it can be seen from the diagrams that the cross polarization of the E-plane and the H-plane is low in this embodiment, and the antenna radiation characteristics are good.
The principle and the implementation mode of the invention are explained by applying the specific embodiment in the invention, and the description in the above embodiment is only used for helping to understand the method and the core idea of the invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (10)
1. The broadband millimeter wave electromagnetic dipole antenna based on SIW feeding is characterized by comprising a substrate integrated waveguide SIW, a PP plate (7) and an upper medium substrate (1) are sequentially arranged above the substrate integrated waveguide SIW, an H-shaped metal patch (2) with two open resonant rings (8) and a loaded open resonant ring (8) is arranged on the upper surface of the upper medium substrate (1), and the two open resonant rings (8) are arranged in upper and lower grooves outside the H-shaped metal patch (2);
the substrate integrated waveguide SIW comprises an upper layer metal plate (4), a lower dielectric substrate (5) and a grounding plate (9) which are sequentially arranged from top to bottom, wherein an hourglass-shaped gap (3) is formed in the upper layer metal plate (4); the metal patch is characterized in that two metal blind holes (6) are formed in the upper medium substrate (1), the two metal blind holes (6) are respectively connected with the H-shaped metal patch (2) and the upper layer metal plate (4), and the two metal blind holes (6) are respectively connected between the waist parts at two sides of the hourglass-shaped gap (3).
2. A SIW-feed-based broadband millimeter-wave electromagnetic dipole antenna according to claim 1, characterized in that the lower dielectric substrate (5) of the substrate integrated waveguide SIW is provided with a plurality of metal through holes.
3. A SIW feed based broadband millimeter wave dipole antenna according to claim 1, characterized in that said H-shaped metal patch (2) is provided with an H-shaped hollowed-out portion, said H-shaped hollowed-out portion being provided with a step portion at one side close to a vertical symmetry axis.
4. A SIW feed based broadband millimeter wave electromagnetic dipole antenna according to claim 3, wherein said step portion comprises three steps connected in sequence, the vertical height difference of each step is 0.2mm, 0.45mm and 0.4mm, and the transverse width difference of each step is 0.5mm, 0.3mm and 0.2 mm.
5. A SIW feed based broadband millimeter wave electromagnetic dipole antenna according to claim 1, wherein said H-shaped metal patch (2) is provided with chamfers at four outer corners, and the chamfers have a length of 0.8mm and a width of 0.35 mm.
6. A SIW-feed based wideband millimeter-wave dipole antenna according to claim 1, wherein said split resonant ring (8) is a double split resonant ring, and each split resonant ring (8) comprises an outer split resonant ring (81) connected to the H-shaped metal patch (2), and an inner split resonant ring (82) disposed opposite to the outer split resonant ring (81).
7. A broadband millimeter-wave dipole antenna based on SIW feeding according to claim 6, wherein said external open-ended resonant ring (81) comprises a first transverse section (811) connected to said H-shaped metal patch (2), said first transverse section (811) has a first bending portion (812), a second bending portion (813) and a third bending portion (814) at its two ends, respectively, said first bending portion, said second bending portion and said third bending portion being sequentially connected and bent inward, each bending portion has a bending angle of 90 °, said third bending portion (814) has its end facing said internal open-ended resonant ring (82), and said external open-ended resonant ring (81) has a concave shape; the lengths of the first transverse section (811), the first bending part (812), the second bending part (813) and the third bending part (814) are respectively 1.0mm, 0.7mm, 0.45mm and 0.4mm, and the width of the outer open resonant ring (81) is 0.08 mm; the H-shaped metal patch (2) is connected with the middle part of the first transverse section (811).
8. A SIW feed based broadband millimeter-wave dipole antenna according to claim 6, wherein said open-ended resonant ring (82) is "C" -shaped, the "C" -shaped opening of said open-ended resonant ring (82) is towards the ends of two of said third bends (814); the inner-opening resonance ring (82) comprises a second transverse section (821), two ends of the second transverse section (821) are respectively provided with an inward fourth bending part (822), and the bending angle of the fourth bending part (822) is 90 degrees; the lengths of the second transverse section (821) and the fourth bending part (822) are 0.64mm and 0.17mm respectively, and the width of the inner opening resonance ring (82) is 0.08 mm.
9. A SIW feed based wideband millimeter wave dipole antenna according to claim 8, wherein said second transversal segment (821) is provided with a connection portion connected to said H-shaped metal patch (2), said connection portion having a width equal to the width of said open-ended resonance loop (82); the length of the connecting part is 0.25 mm.
10. The SIW (substrate integrated waveguide) feed-based broadband millimeter wave electromagnetic dipole antenna is characterized in that the upper dielectric substrate (1) and the lower dielectric substrate (5) are PCB (printed circuit board), and the grounding plate (9) and the upper metal plate (4) are copper-clad plates.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140240186A1 (en) * | 2013-02-28 | 2014-08-28 | Samsung Electronics Co., Ltd | Open end antenna, antenna array, and related system and method |
| CN108933327A (en) * | 2018-06-08 | 2018-12-04 | 西安电子科技大学 | A kind of improved broadband microstrip antenna unit |
| CN109286081A (en) * | 2018-08-03 | 2019-01-29 | 西安电子科技大学 | The broadband plane array antenna of feeding substrate integrated waveguide |
| CN110380218A (en) * | 2019-05-17 | 2019-10-25 | 东南大学 | A kind of circular polarization plane substrate integrates magnetoelectricity dipole antenna and its array |
| CN112054301A (en) * | 2020-09-16 | 2020-12-08 | 南京尤圣美电子科技有限公司 | Miniaturized linear polarization, dual polarization, circular polarization and triple polarization 5G antenna |
| CN112952372A (en) * | 2021-03-09 | 2021-06-11 | 桂林电子科技大学 | Millimeter wave band ultra-wideband patch antenna based on substrate integrated waveguide feed |
| CN114284736A (en) * | 2021-12-31 | 2022-04-05 | 厦门大学 | Millimeter-wave wide-band high-gain dual-polarization magnetoelectric dipole filter antenna |
| CN114566794A (en) * | 2022-03-11 | 2022-05-31 | 厦门大学 | 5G millimeter wave dual-polarization magnetoelectric dipole filtering antenna |
-
2022
- 2022-06-10 CN CN202210655060.1A patent/CN115117612B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140240186A1 (en) * | 2013-02-28 | 2014-08-28 | Samsung Electronics Co., Ltd | Open end antenna, antenna array, and related system and method |
| CN108933327A (en) * | 2018-06-08 | 2018-12-04 | 西安电子科技大学 | A kind of improved broadband microstrip antenna unit |
| CN109286081A (en) * | 2018-08-03 | 2019-01-29 | 西安电子科技大学 | The broadband plane array antenna of feeding substrate integrated waveguide |
| CN110380218A (en) * | 2019-05-17 | 2019-10-25 | 东南大学 | A kind of circular polarization plane substrate integrates magnetoelectricity dipole antenna and its array |
| CN112054301A (en) * | 2020-09-16 | 2020-12-08 | 南京尤圣美电子科技有限公司 | Miniaturized linear polarization, dual polarization, circular polarization and triple polarization 5G antenna |
| CN112952372A (en) * | 2021-03-09 | 2021-06-11 | 桂林电子科技大学 | Millimeter wave band ultra-wideband patch antenna based on substrate integrated waveguide feed |
| CN114284736A (en) * | 2021-12-31 | 2022-04-05 | 厦门大学 | Millimeter-wave wide-band high-gain dual-polarization magnetoelectric dipole filter antenna |
| CN114566794A (en) * | 2022-03-11 | 2022-05-31 | 厦门大学 | 5G millimeter wave dual-polarization magnetoelectric dipole filtering antenna |
Non-Patent Citations (3)
| Title |
|---|
| GUOPENG YANG 等: "Low-profile broadband aperture coupled magneto-electric dipole array antenna for millimetre-wave applications" * |
| 王茜茜;钱祖平;曹文权;晋军;: "一种紧凑型宽带磁电偶极子天线" * |
| 陈茂洋;肖祺;: "一种M型超宽带磁电偶极子天线设计" * |
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