CN115117582B - Terahertz waveguide structure, radar system and electronic equipment - Google Patents
Terahertz waveguide structure, radar system and electronic equipment Download PDFInfo
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- CN115117582B CN115117582B CN202210920146.2A CN202210920146A CN115117582B CN 115117582 B CN115117582 B CN 115117582B CN 202210920146 A CN202210920146 A CN 202210920146A CN 115117582 B CN115117582 B CN 115117582B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
- G01S13/88—Radar or analogous systems specially adapted for specific applications
- G01S13/89—Radar or analogous systems specially adapted for specific applications for mapping or imaging
Abstract
The invention relates to the technical field of terahertz radars, in particular to a terahertz waveguide structure, a radar system and electronic equipment, which comprise an intermediate waveguide cavity, an integrated waveguide cavity, a first waveguide cavity cover and a plurality of second waveguide cavity covers, wherein a through hole is formed in the intermediate waveguide cavity, and a first conductor is arranged in the through hole; the integrated waveguide cavity is provided with a plurality of outer wall surfaces, a third circuit waveguide cavity is arranged between the outer wall surfaces and the second waveguide cavity cover, a signal transmission channel is arranged in the integrated waveguide cavity, and a second conductor is arranged in the signal transmission channel. According to the invention, through the cooperation among the first conductor, the through hole, the second conductor and the signal transmission channel, the corner and torsion waveguide structure in the original combined waveguide structure is replaced, so that the processing difficulty of the waveguide cavity is effectively reduced, the space utilization rate of the waveguide cavity is improved, the high isolation between the tail end of the terahertz transmitting circuit and the tail end of the terahertz receiving circuit is realized, and the miniaturized integrated arrangement of the front end of the terahertz radar system is realized.
Description
Technical Field
The invention relates to the technical field of terahertz radars, in particular to a terahertz waveguide structure, a radar system and electronic equipment.
Background
The terahertz imaging system can realize high-resolution imaging, tiny target detection, target detection in complex environments and stealth target detection, and can be used in the fields of battlefield environmental reconnaissance, public place safety inspection, medical disease diagnosis, nondestructive inspection and the like.
The terahertz radar is an important imaging mode in a terahertz imaging system, in the existing terahertz radar system, a transmitter and a receiver are separate modules, the transmitter comprises a local oscillator driving circuit, a terahertz pre-stage frequency multiplier, a terahertz final-stage frequency multiplier and other circuits, and each circuit corresponds to a waveguide structure of an independent module and is connected through a waveguide flange; the receiver is another link, which comprises a subharmonic mixer, a local oscillator driving frequency multiplier, a driving frequency multiplier amplifier and the like, and each circuit is also connected with the waveguide structure of the corresponding independent module through a waveguide flange; in addition, because terahertz circuit volume is less, usually is the micron level, and waveguide flange is international standard size, and single circuit flange dish is about 2 centimetres, and in current waveguide cavity structure, only can correspond in the waveguide cavity and set up a circuit, this not only causes waveguide cavity structure inner space's very big waste, to waveguide structure-based terahertz radar system simultaneously, still can cause waveguide flange in the whole terahertz radar system quantity to be many, connect loaded down with trivial details, problem such as volume.
Disclosure of Invention
The invention aims to provide a terahertz waveguide structure, a radar system and electronic equipment, which are used for solving the technical problems in the prior art and mainly comprise the following three aspects:
the first aspect of the application provides a terahertz waveguide structure, which comprises an intermediate waveguide cavity, an integrated waveguide cavity, a first waveguide cavity cover and a plurality of second waveguide cavity covers,
the intermediate waveguide cavity is provided with a through hole penetrating the intermediate waveguide cavity, a first conductor is arranged in the through hole, a first insulating layer is arranged between the first conductor and the through hole, two ends of the through hole are respectively arranged corresponding to the first waveguide cavity cover and the integrated waveguide cavity, a first circuit waveguide cavity is arranged between the intermediate waveguide cavity and the first waveguide cavity cover, a second circuit waveguide cavity is arranged between the intermediate waveguide cavity and the integrated waveguide cavity, and the first conductor is used for realizing signal transmission connection between the first circuit waveguide cavity and the second circuit waveguide cavity;
the integrated waveguide cavity is provided with a plurality of outer wall surfaces corresponding to the second waveguide cavity cover, a third circuit waveguide cavity is arranged between the outer wall surfaces and the second waveguide cavity cover, a signal transmission channel is arranged in the integrated waveguide cavity, a channel opening corresponding to the signal transmission channel is arranged on the outer wall surfaces, a second conductor is arranged in the signal transmission channel, a second insulating layer is arranged between the second conductor and the signal transmission channel, and the second conductor is used for realizing signal transmission connection between the second circuit waveguide cavity and the third circuit waveguide cavity.
Further, when at least two intermediate waveguide cavities are arranged between the first waveguide cavity cover and the integrated waveguide cavity, the first waveguide cavity cover, the intermediate waveguide cavities and the integrated waveguide cavity are sequentially distributed along the longitudinal direction, a fourth circuit waveguide cavity is arranged between two adjacent intermediate waveguide cavities, and the first conductor is used for realizing connection of at least two of the first circuit waveguide cavity, the second circuit waveguide cavity and the fourth circuit waveguide cavity.
Further, the terahertz waveguide structure further comprises a first probe overstructure and a second probe overstructure, wherein the first probe overstructure is used for being matched with the first conductor to realize the connection of at least two of the first circuit waveguide cavity, the second circuit waveguide cavity and the fourth circuit waveguide cavity, and the second probe overstructure is used for being matched with the second conductor to realize the signal transmission connection of the second circuit waveguide cavity and the third circuit waveguide cavity.
Further, the first conductor is connected with the first probe through-structure gold wire bonding, and the second conductor is connected with the second probe through-structure gold wire bonding.
Further, the first circuit waveguide cavity is at least partially arranged on the first waveguide cavity cover and/or the intermediate waveguide cavity; the second circuit waveguide cavity is at least partially arranged on the intermediate waveguide cavity and/or the integrated waveguide cavity, and the third circuit waveguide cavity is at least partially arranged on the second waveguide cavity cover and/or the integrated waveguide cavity; the fourth circuit waveguide cavity is at least partially arranged on the upper intermediate waveguide cavity and/or the lower intermediate waveguide cavity in the two adjacent intermediate waveguide cavities.
Further, at least one of the first conductor and the through hole is connected with the first insulating layer; at least one of the second conductor and the signal transmission channel is connected with the second insulating layer.
Further, the first waveguide cavity cover is detachably connected with the intermediate waveguide cavity, and the second waveguide cavity cover and the integrated waveguide cavity are detachably connected.
Further, the terahertz waveguide structure comprises two third circuit waveguide cavities, and the two third circuit waveguide cavities are located on two opposite outer wall surfaces of the integrated waveguide cavity.
The second aspect of the application provides a terahertz radar system, including signal source, local oscillator drive circuit, terahertz transmitting circuit end, terahertz receiving circuit end, and foretell terahertz waveguide structure, the signal source sets up in first circuit waveguide intracavity, and local oscillator drive circuit sets up in second circuit waveguide intracavity, and terahertz transmitting circuit end, terahertz receiving circuit end set up respectively in different third circuit waveguide intracavity, and the signal output part of signal source is connected with local oscillator drive circuit's signal input part through first conductor, and terahertz transmitting circuit end's signal input part, terahertz receiving circuit end's signal input part are connected with local oscillator drive circuit's signal output part respectively through the second conductor.
A third aspect of the present application provides an electronic device, including the above terahertz waveguide structure, or the above terahertz radar system.
Compared with the prior art, the invention has at least the following technical effects:
according to the terahertz waveguide structure, the radar system and the electronic equipment, through the matching relation of the first conductor and the through hole and the matching relation of the second conductor and the signal transmission channel, the corner and torsion waveguide structure in the original combined waveguide structure is replaced, and the processing difficulty of the waveguide cavity is effectively reduced; in addition, the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end are installed by arranging the third circuit waveguide cavity on the plurality of outer wall surfaces of the integrated waveguide cavity, so that the space utilization rate of the waveguide cavity is effectively improved, independent arrangement of the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end and high isolation between the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end are effectively ensured, and miniaturized integrated arrangement of the front end of the terahertz radar system is realized.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following description will briefly explain the embodiments of the present invention or the drawings used in the description of the prior art, and it is obvious that the drawings described below are only some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a terahertz waveguide structure in embodiment 1 of the present application;
FIG. 2 is a schematic diagram of the connection structure of the first, second and third circuit waveguides of FIG. 1;
FIG. 3 is a schematic diagram of a connection structure between the first circuit waveguide cavity and the second circuit waveguide cavity in FIG. 2 and the first conductor, respectively;
FIG. 4 is a schematic diagram of the connection structure of the second conductor to a third circuit waveguide cavity of FIG. 2;
fig. 5 is a schematic diagram of the signal transmission channel in fig. 1;
FIG. 6 is an enlarged view of a portion of FIG. 5 at A;
FIG. 7 is a schematic view of the first waveguide cavity cover of FIG. 1;
FIG. 8 is a schematic diagram of another terahertz waveguide structure;
FIG. 9 is a schematic diagram of the connection structure of the first, second, third and fourth circuit waveguides of FIG. 1;
fig. 10 is a schematic diagram of circuit connection of the terahertz radar system in embodiment 2;
in the figure:
10. a first waveguide cavity cover; 20. an intermediate waveguide cavity; 30. an integrated waveguide cavity; 40. a second waveguide cavity cover; 110. a first circuit waveguide cavity; 120. a through hole; 121. a first conductor; 122. a first insulating layer; 130. a first probe transition structure; 210. a second circuit waveguide cavity; 230. a second probe transition structure; 310. a third circuit waveguide cavity; 320. a signal transmission channel; 321. a second conductor; 322. a second insulating layer; 323. a passage opening; 324. a first signal hole; 325. a second signal hole; 330. an outer wall surface; 410. a fourth circuit waveguide cavity; 510. a signal source; 520. a first terahertz frequency multiplier; 530. a terahertz amplifier; 540. a second terahertz frequency multiplier; 550. a transmitter antenna; 560. a terahertz subharmonic mixer; 570. a receiver antenna; 810. gold wire bonding.
Detailed Description
The following description provides many different embodiments, or examples, for implementing different features of the invention. The elements and arrangements described in the following specific examples are presented for purposes of brevity and are provided only as examples and are not intended to limit the invention.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the present invention, unless expressly stated or limited otherwise, a first feature may include first and second features directly contacting each other, either above or below a second feature, or through additional features contacting each other, rather than directly contacting each other. Moreover, the first feature being above, over, and on the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being below, beneath, and beneath the second feature includes the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is less level than the second feature.
Example 1:
the present embodiment provides a terahertz waveguide structure, as shown in fig. 1 and 2, including an intermediate waveguide cavity 20, an integrated waveguide cavity 30, a first waveguide cavity cover 10, and a plurality of second waveguide cavity covers 40,
the middle waveguide cavity 20 is provided with a through hole 120 penetrating through the middle waveguide cavity, a first conductor 121 is arranged in the through hole 120, a first insulating layer 122 is arranged between the first conductor 121 and the through hole 120, two ends of the through hole 120 are respectively arranged corresponding to the first waveguide cavity cover 10 and the integrated waveguide cavity 30, a first circuit waveguide cavity 110 is arranged between the middle waveguide cavity 20 and the first waveguide cavity cover 10, a second circuit waveguide cavity 210 is arranged between the middle waveguide cavity 20 and the integrated waveguide cavity 30, and the first conductor 121 is used for realizing signal transmission connection between the first circuit waveguide cavity 110 and the second circuit waveguide cavity 210;
the integrated waveguide cavity 30 has a plurality of outer wall surfaces 330 corresponding to the second waveguide cavity cover 40, a third circuit waveguide cavity 310 is disposed between the outer wall surfaces 330 and the second waveguide cavity cover 40, a signal transmission channel 320 is disposed in the integrated waveguide cavity 30, a channel opening 323 corresponding to the signal transmission channel 320 is disposed on the outer wall surfaces 330, a second conductor 321 is disposed in the signal transmission channel 320, a second insulating layer 322 is disposed between the second conductor 321 and the signal transmission channel 320, and the second conductor 321 is used for implementing signal transmission connection between the second circuit waveguide cavity 210 and the third circuit waveguide cavity 310.
Compared with the traditional transmission lines such as microstrip lines, the rectangular waveguide structure has the advantages of large power capacity, low transmission loss, main mode transmission and the like; however, since the rectangular waveguide structure is subjected to micro-mechanical milling processing on pure metal, the processing flexibility is poor, and the processing of the corner and torsion waveguide structure is very difficult, so that the traditional terahertz circuit is mostly a single-layer circuit on the waveguide cavity; in addition, the terahertz circuit is small in size and is usually in a micron level, the waveguide flanges are of an international standard size, the single circuit flange is about 2 cm, and most of the existing terahertz circuits only have one circuit in one waveguide cavity, so that the waste of the internal space is caused, and particularly when the waveguide cavity is applied to a terahertz radar system, the problems of a large number of waveguide flanges, complicated connection, large size and the like in the terahertz radar system are also caused; in the embodiment, the structure of combining the upper waveguide cavity and the lower waveguide cavity of the original waveguide flange is changed into a waveguide structure formed by combining the middle waveguide cavity 20, the integrated waveguide cavity 30, the first waveguide cavity cover 10 and the plurality of second waveguide cavity covers 40, so that only one circuit waveguide cavity can be arranged in the original waveguide structure and is changed into a structure comprising a plurality of circuit waveguide cavities, when the terahertz radar system is installed, a signal source 510 of the terahertz radar system can be selectively installed in the first circuit waveguide cavity 110, a local oscillator driving circuit is installed in the second circuit waveguide cavity 210, the tail end of the terahertz transmitting circuit and the tail end of the terahertz receiving circuit are respectively arranged in different third circuit waveguide cavities 310, namely, the tail end of the terahertz transmitting circuit is arranged in one third circuit waveguide cavity 310, the tail end of the terahertz receiving circuit is arranged in the other third circuit waveguide cavity 310, the signal source 510 is in signal transmission connection with a driving circuit through a first conductor 121, and the driving circuit signal is respectively connected with the tail end of the terahertz transmitting circuit and the tail end of the terahertz receiving circuit through a second conductor 321, and all the terahertz radar system can be stacked in the three-dimensional terahertz radar system, and the three-dimensional integrated terahertz radar system is realized; meanwhile, for the intermediate waveguide cavity 20 and the integrated waveguide cavity 30, on one hand, the corner and torsion waveguide structure in the original combined waveguide structure is replaced by adopting the matching relation of the first conductor 121 and the through hole 120 and the matching relation of the second conductor 321 and the signal transmission channel 320, so that the processing difficulty of the waveguide cavity is effectively reduced, and on the other hand, the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end are mounted by arranging the third circuit waveguide cavity 310 on the plurality of outer wall surfaces 330 of the integrated waveguide cavity 30, so that the space utilization rate of the waveguide cavity is effectively improved, the independent arrangement of the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end is effectively ensured, and the high isolation between the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end is effectively ensured, so that the miniaturized integrated arrangement of the front end of the terahertz radar system is realized.
Specifically, as shown in fig. 5 and 6, the signal transmission channel 320 includes a first signal hole 324 and a plurality of second signal holes 325, where the first signal hole 324 is disposed corresponding to a channel opening 323 on the outer wall surface 330 where the second circuit waveguide cavity 210 is located, the second signal hole 325 is disposed corresponding to a channel opening 323 on the outer wall surface 330 where the third circuit waveguide cavity 310 is located, and the plurality of second signal holes 325 are respectively communicated with the first signal hole 324. Preferably, the angle between the first signal aperture 324 and the second signal aperture 325 is 90 °. Preferably, the central axes of the second signal holes 325 are located in the same plane, and the central axes of the first signal holes 324 are perpendicular to the planes in which the central axes of all the second signal holes 325 are located. By setting the included angle between the first signal hole 324 and the second signal hole 325 to 90 degrees, the first signal hole 324 and the second signal hole 325 are conveniently processed on the integrated waveguide cavity 30, and the processing difficulty of the integrated waveguide cavity 30 is reduced.
Specifically, as shown in fig. 8 and 9, when at least two intermediate waveguide cavities 20 are disposed between the first waveguide cavity cover 10 and the integrated waveguide cavity 30, the first waveguide cavity cover 10, the intermediate waveguide cavities 20 and the integrated waveguide cavity 30 are sequentially arranged in the longitudinal direction, a fourth circuit waveguide cavity 410 is disposed between two adjacent intermediate waveguide cavities 20, and the first conductor 121 is used for realizing connection of at least two of the first circuit waveguide cavity 110, the second circuit waveguide cavity 210 and the fourth circuit waveguide cavity 410.
When the terahertz waveguide structure in the embodiment of the application is applied to a terahertz system circuit, for the terahertz system circuit which needs four existing waveguide structures to realize combination, a first part of the terahertz system circuit is borne by a first circuit waveguide cavity 110, a second part of the terahertz system circuit is borne by a second circuit waveguide cavity 210, a third part of the terahertz system circuit is borne by a third circuit waveguide cavity 310, and the terahertz system circuits can be integrated in one waveguide structure by connecting the first circuit waveguide cavity 110, the second circuit waveguide cavity 210 and the third circuit waveguide cavity 310 through a first conductor 121 and a second conductor 321 according to the connection sequence of the first, second, third and fourth parts of the terahertz system circuits along the signal transmission direction in the terahertz system circuit, so that the four parts of the terahertz system circuits realize signal transmission through the first conductor 121 and the second conductor 321; similarly, for the terahertz system circuit that needs more than four existing waveguide structures to realize combination, as shown in fig. 8 and 9, the number of intermediate waveguide cavities 20 is correspondingly increased, and according to the signal transmission directions of all circuit parts in the terahertz system circuit, all the circuit parts are sequentially installed in the first circuit waveguide cavity 110, the fourth circuit waveguide cavity 410, the second circuit waveguide cavity 210 and the third circuit waveguide cavity 310, and then the first conductor 121 and the second conductor 321 are connected through signal transmission, so that the terahertz system circuit can be integrated in one waveguide structure.
The terahertz system circuit is generally composed of a plurality of functional circuit units, and the functional circuit units are circuit units capable of realizing any one of mixing, frequency multiplication, amplification, filtering and coupling.
In some embodiments, for a terahertz system circuit that needs multiple existing waveguide structures to realize combination, the integration of the terahertz system circuit may be realized by adopting a mode that the waveguide structure of the embodiment is used in combination with the existing waveguide structure to carry the terahertz system circuit.
Specifically, as shown in fig. 2 to 4, the terahertz waveguide structure further includes a first probe transition structure 130 and a second probe transition structure 230, where the first probe transition structure 130 is used to cooperate with the first conductor 121 to implement connection of at least two of the first circuit waveguide cavity 110, the second circuit waveguide cavity 210 and the fourth circuit waveguide cavity 410, and the second probe transition structure 230 is used to cooperate with the second conductor 321 to implement signal transmission connection of the second circuit waveguide cavity 210 and the third circuit waveguide cavity 310.
Specifically, a first excessive probe structure 130 is disposed between the first waveguide cavity cover 10 and the adjacent intermediate waveguide cavity 20, and the first excessive probe structure 130 is disposed close to the adjacent first circuit waveguide cavity 110; a first probe transition structure 130 is arranged between two adjacent intermediate waveguide cavities 20, the first probe transition structure 130 being arranged close to an adjacent fourth circuit waveguide cavity 410; a first probe over structure 130 and a second probe over structure 230 are arranged between the integrated waveguide cavity 30 and the adjacent intermediate waveguide cavity 20, and the first probe over structure 130 and the second probe over structure 230 are respectively arranged at two sides of the second circuit waveguide cavity 210 and are close to the second circuit waveguide cavity 210; a second oversubstance 230 is disposed between the integrated waveguide cavity 30 and the second waveguide cavity cover 40, the second oversubstance 230 being disposed adjacent to the third circuit waveguide cavity 310.
Specifically, the first conductor 121 is connected to the first excessive probe structure 130 through the gold wire bond 810, the second conductor 321 is connected to the second excessive probe structure 230 through the gold wire bond 810, and the first conductor 121 is connected to the second excessive probe structure 230, so as to facilitate the processing, splitting and combining between the waveguide structure and the terahertz system circuit.
Specifically, the first circuit waveguide cavity 110 is at least partially disposed on the first waveguide cavity cover 10 and/or the intermediate waveguide cavity 20; the second circuit waveguide cavity 210 is at least partially disposed on the intermediate waveguide cavity 20 and/or the integrated waveguide cavity 30, and the third circuit waveguide cavity 310 is at least partially disposed on the second waveguide cavity cover 40 and/or the integrated waveguide cavity 30; of the adjacent two intermediate waveguide cavities 20, the fourth circuit waveguide cavity 410 is at least partially disposed on the upper intermediate waveguide cavity 20 and/or on the lower intermediate waveguide cavity 20. Preferably, one half of the first circuit waveguide cavity 110 is disposed on the first waveguide cavity cover 10, and the other half of the first circuit waveguide cavity 110 is disposed on the intermediate waveguide cavity 20; half of the second circuit waveguide cavity 210 is disposed in the intermediate waveguide cavity 20, the other half of the second circuit waveguide cavity 210 is disposed on the integrated waveguide cavity 30, half of the third circuit waveguide cavity 310 is disposed in the second waveguide cavity cover 40, and the other half of the third circuit waveguide cavity 310 is disposed on the integrated waveguide cavity 30; of the adjacent two intermediate waveguide cavities 20, half of the fourth circuit waveguide cavity 410 is disposed on the upper intermediate waveguide cavity 20 and the other half of the fourth circuit waveguide cavity 410 is disposed on the lower intermediate waveguide cavity 20.
In some embodiments, one of the first waveguide cavity cover 10 and the intermediate waveguide cavity 20 may be selected to provide a smaller portion of the first circuit waveguide cavity 110, and the other of the first waveguide cavity cover 10 and the intermediate waveguide cavity 20 may be selected to provide a larger portion of the first circuit waveguide cavity 110; one of the intermediate waveguide cavity 20 and the integrated waveguide cavity 30 may be selected to provide a smaller portion of the second circuit waveguide cavity 210, and the other of the intermediate waveguide cavity 20 and the integrated waveguide cavity 30 may be selected to provide a larger portion of the second circuit waveguide cavity 210; a smaller portion of the third circuit waveguide cavity 310 may be provided by one of the second waveguide cavity cover 40 and the integrated waveguide cavity 30, and a larger portion of the third circuit waveguide cavity 310 may be provided by the other of the second waveguide cavity cover 40 and the integrated waveguide cavity 30; of the adjacent two intermediate waveguide cavities 20, one of the upper intermediate waveguide cavity 20 and the lower intermediate waveguide cavity 20 may be selected to provide a smaller portion of the fourth circuit waveguide cavity 410, and the other of the upper intermediate waveguide cavity 20 and the lower intermediate waveguide cavity 20 may be selected to provide a larger portion of the fourth circuit waveguide cavity 410.
Specifically, at least one of the first conductor 121 and the via 120 is connected to the first insulating layer 122; at least one of the second conductor 321 and the signal transmission path 320 is connected to the second insulating layer 322. For connection of the first insulating layer 122 to at least one of the first conductor 121 and the through hole 120, a signal transmission line with an existing insulating coating may be selected for connection of the first insulating layer 122 to the first conductor 121, and for connection of the first insulating layer 122 to the through hole 120, the first insulating layer 122 may be selectively provided on the inner wall of the through hole 120, specifically, the first insulating layer 122 may be provided by spraying or painting an insulating material; in addition, for the case that the first insulating layer 122 is simultaneously connected with the first conductor 121 and the through hole 120, the first insulating layer 122 may be one insulator and simultaneously connected with the through hole 120 and the first conductor 121, or may be a combination of a plurality of insulators, for example, an insulating coating and a spraying insulating material may be selected to be used as the first insulating layer 122 together, that is, a signal transmission line with an insulating coating is adopted, and an insulating material is disposed in cooperation with the inner wall of the through hole 120; similarly, the second insulating layer 322 in connection with the second insulating layer 322 in at least one of the second conductor 321 and the signal transmission path 320 may be the same as the first insulating layer 122. Preferably, the first insulating layer 122 is coated on the first conductor 121, and the second insulating layer 322 is coated on the second conductor 321.
Specifically, the first waveguide cavity cover 10 is detachably connected to the intermediate waveguide cavity 20, and the second waveguide cavity cover 40 and the integrated waveguide cavity 30 are detachably connected. Preferably, the first waveguide cavity cover 10 and the intermediate waveguide cavity 20, the second waveguide cavity cover 40 and the integrated waveguide cavity 30, and the adjacent two intermediate waveguide cavities 20 may be in bolt connection, or may be in existing waveguide flange connection, or may be in fastening or bolting of the first waveguide cavity cover 10, the intermediate waveguide cavity 20, the integrated waveguide cavity 30 and the second waveguide cavity cover 40 by using a peripheral frame.
Specifically, the terahertz waveguide structure includes two third circuit waveguide cavities 310, the two third circuit waveguide cavities 310 are located on two opposite outer wall surfaces of the integrated waveguide cavity 30, and the signal transmission channel 320 includes two second signal holes 325. Preferably, as shown in fig. 1, the second circuit waveguide cavity 210 may be selectively disposed on the top outer wall surface 330 of the integrated waveguide cavity 30, one third circuit waveguide cavity 310 is disposed on the front outer wall surface 330 of the integrated waveguide cavity 30, the other third circuit waveguide cavity 310 is disposed on the rear outer wall surface 330 of the integrated waveguide cavity 30, two second signal holes 325 respectively correspond to the front and rear outer wall surfaces 330, and then the terahertz transmitting circuit terminal of the terahertz radar system may be mounted in the third circuit waveguide cavity 310 on the front outer wall surface 330, and the terahertz receiving circuit terminal may be mounted in the third circuit waveguide cavity 310 on the rear outer wall surface 330, thereby further realizing the miniaturized integrated arrangement of the front end of the terahertz radar system on the basis of effectively ensuring the high isolation between the terahertz transmitting circuit terminal and the terahertz receiving circuit terminal.
Specifically, the first conductor 121 is disposed coaxially with the through hole 120, and the second conductor 321 is disposed coaxially with the signal hole, so as to reduce the risk of signal leakage.
Preferably, the number of the outer wall surfaces 330 of the circuit waveguide cavity is not less than the number of the second waveguide cavity covers 40 on the integrated waveguide cavity 30.
Example 2:
the embodiment of the application provides a terahertz radar system, as shown in fig. 2 and 10, including signal source 510, local oscillator drive circuit, terahertz transmitting circuit end, terahertz receiving circuit end, and terahertz waveguide structure in embodiment 1, the signal source sets up in first circuit waveguide cavity 110, local oscillator drive circuit sets up in second circuit waveguide cavity 210, terahertz transmitting circuit end, terahertz receiving circuit end set up respectively in third circuit waveguide cavity 310 that is different, the signal output part of signal source 510 is connected with local oscillator drive circuit's signal input part through first conductor 121, terahertz transmitting circuit terminal's signal input part, terahertz receiving circuit terminal's signal input part is connected with local oscillator drive circuit's signal output part through second conductor 321 respectively.
The first circuit waveguide cavity 110 is used for installing the signal source 510, the second circuit waveguide cavity 210 is used for installing the local oscillator drive circuit, the two third circuit waveguide cavities 310 are respectively provided with the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end, the first conductor 121 is matched with the through hole 120 to realize coaxial vertical interconnection of the signal source 510 and the local oscillator drive circuit, the second conductor 321 is matched with the signal transmission channel 320 to realize 90-degree turning coaxial interconnection of the local oscillator drive circuit and the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end respectively, the whole terahertz radar system is integrated into one waveguide structure, the high isolation between the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end is ensured, and the miniaturized three-dimensional stacking integrated arrangement of the front end of the terahertz radar system is realized.
Specifically, the signal source 510 is a Ka-band frequency multiplier amplifier.
Specifically, the local oscillator driving circuit includes a first terahertz frequency multiplier 520 and a terahertz amplifier 530. Preferably, the first terahertz frequency multiplier 520 is a 110GHz frequency multiplier and the terahertz amplifier 530 is a 110GHz amplifier.
Specifically, the terahertz transmitting circuit end includes a second terahertz frequency multiplier 540 and a transmitter antenna 550.
Specifically, the terahertz receiving circuit end includes a terahertz subharmonic mixer 560 and a receiver antenna 570. Preferably, the second terahertz frequency multiplier 540 is a 220GHz frequency multiplier, and the terahertz subharmonic mixer 560 is a 220GHz subharmonic mixer.
Example 3:
an embodiment of the present application provides an electronic device including the terahertz waveguide structure in embodiment 1 or the terahertz radar system in embodiment 2.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. A terahertz waveguide structure is characterized by comprising an intermediate waveguide cavity, an integrated waveguide cavity, a first waveguide cavity cover and a plurality of second waveguide cavity covers,
the intermediate waveguide cavity is provided with a through hole penetrating the intermediate waveguide cavity, a first conductor is arranged in the through hole, a first insulating layer is arranged between the first conductor and the through hole, two ends of the through hole are respectively arranged corresponding to the first waveguide cavity cover and the integrated waveguide cavity, a first circuit waveguide cavity is arranged between the intermediate waveguide cavity and the first waveguide cavity cover, a second circuit waveguide cavity is arranged between the intermediate waveguide cavity and the integrated waveguide cavity, and the first conductor is used for realizing signal transmission connection between the first circuit waveguide cavity and the second circuit waveguide cavity;
the integrated waveguide cavity is provided with a plurality of outer wall surfaces corresponding to the second waveguide cavity cover, a third circuit waveguide cavity is arranged between the outer wall surfaces and the second waveguide cavity cover, a signal transmission channel is arranged in the integrated waveguide cavity, a channel opening corresponding to the signal transmission channel is arranged on the outer wall surfaces, a second conductor is arranged in the signal transmission channel, a second insulating layer is arranged between the second conductor and the signal transmission channel, and the second conductor is used for realizing signal transmission connection between the second circuit waveguide cavity and the third circuit waveguide cavity.
2. The terahertz waveguide structure of claim 1, wherein when at least two intermediate waveguide cavities are provided between the first waveguide cavity cover and the integrated waveguide cavity, the first waveguide cavity cover, the intermediate waveguide cavities and the integrated waveguide cavity are sequentially arranged in the longitudinal direction, a fourth circuit waveguide cavity is provided between two adjacent intermediate waveguide cavities, and the first conductor is used for realizing connection of at least two of the first circuit waveguide cavity, the second circuit waveguide cavity and the fourth circuit waveguide cavity.
3. The terahertz waveguide structure of claim 2, further comprising a first probe transition for cooperating with the first conductor to effect connection of at least two of the first circuit waveguide cavity, the second circuit waveguide cavity, and the fourth circuit waveguide cavity, and a second probe transition for cooperating with the second conductor to effect signal transmission connection of the second circuit waveguide cavity and the third circuit waveguide cavity.
4. The terahertz waveguide structure of claim 3, wherein the first conductor is in gold-bond connection with a first probe superstructure and the second conductor is in gold-bond connection with a second probe superstructure.
5. The terahertz waveguide structure of claim 2, wherein the first circuit waveguide cavity is at least partially disposed on a first waveguide cavity cover and/or an intermediate waveguide cavity; the second circuit waveguide cavity is at least partially arranged on the intermediate waveguide cavity and/or the integrated waveguide cavity, and the third circuit waveguide cavity is at least partially arranged on the second waveguide cavity cover and/or the integrated waveguide cavity; the fourth circuit waveguide cavity is at least partially arranged on the upper intermediate waveguide cavity and/or the lower intermediate waveguide cavity in the two adjacent intermediate waveguide cavities.
6. The terahertz waveguide structure of any one of claims 2 to 5, wherein at least one of the first conductor and the via is connected to a first insulating layer; at least one of the second conductor and the signal transmission channel is connected with the second insulating layer.
7. The terahertz waveguide structure of any one of claims 2 to 5, wherein the first waveguide cavity cover is detachably connected to the intermediate waveguide cavity, and the second waveguide cavity cover and the integrated waveguide cavity are detachably connected.
8. The terahertz waveguide structure of any one of claims 2 to 5, wherein the terahertz waveguide structure includes two third circuit waveguide cavities located on two opposite outer wall surfaces of the integrated waveguide cavity.
9. The terahertz radar system is characterized by comprising a signal source, a local oscillator drive circuit, a terahertz transmitting circuit tail end, a terahertz receiving circuit tail end and the terahertz waveguide structure as set forth in any one of claims 1-8, wherein the signal source is arranged in a first circuit waveguide cavity, the local oscillator drive circuit is arranged in a second circuit waveguide cavity, the terahertz transmitting circuit tail end and the terahertz receiving circuit tail end are respectively arranged in different third circuit waveguide cavities, a signal output end of the signal source is connected with a signal input end of the local oscillator drive circuit through a first conductor, and a signal input end of the terahertz transmitting circuit tail end and a signal input end of the terahertz receiving circuit tail end are respectively connected with a signal output end of the local oscillator drive circuit through a second conductor.
10. An electronic device comprising the terahertz waveguide structure of any one of claims 1 to 8 or the terahertz radar system of claim 9.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161807A (en) * | 2015-09-21 | 2015-12-16 | 电子科技大学 | Tunable terahertz waveguide filter based on bimorph thermal actuator |
| CN105305001A (en) * | 2015-11-05 | 2016-02-03 | 中国电子科技集团公司第四十一研究所 | Terahertz rectangular waveguide bi-directional coupler |
| JP2020039108A (en) * | 2018-08-30 | 2020-03-12 | 東京エレクトロン株式会社 | Antenna device, method for electromagnetic wave radiation, plasma processing device and plasma processing method |
| CN111799537A (en) * | 2020-06-29 | 2020-10-20 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Millimeter wave high-power ultra-wideband waveguide coupling device |
| CN114497951A (en) * | 2022-01-19 | 2022-05-13 | 合肥应为电子科技有限公司 | Millimeter wave band space radial power combiner |
| CN114628874A (en) * | 2020-12-11 | 2022-06-14 | 华为技术有限公司 | Signal isolator and microwave outdoor unit |
| CN216903279U (en) * | 2022-03-18 | 2022-07-05 | 南京信息工程大学 | Terahertz wave quadrupler |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015174463A1 (en) * | 2014-05-14 | 2015-11-19 | コニカミノルタ株式会社 | Detection device and production method for same |
-
2022
- 2022-08-02 CN CN202210920146.2A patent/CN115117582B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105161807A (en) * | 2015-09-21 | 2015-12-16 | 电子科技大学 | Tunable terahertz waveguide filter based on bimorph thermal actuator |
| CN105305001A (en) * | 2015-11-05 | 2016-02-03 | 中国电子科技集团公司第四十一研究所 | Terahertz rectangular waveguide bi-directional coupler |
| JP2020039108A (en) * | 2018-08-30 | 2020-03-12 | 東京エレクトロン株式会社 | Antenna device, method for electromagnetic wave radiation, plasma processing device and plasma processing method |
| CN111799537A (en) * | 2020-06-29 | 2020-10-20 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Millimeter wave high-power ultra-wideband waveguide coupling device |
| CN114628874A (en) * | 2020-12-11 | 2022-06-14 | 华为技术有限公司 | Signal isolator and microwave outdoor unit |
| CN114497951A (en) * | 2022-01-19 | 2022-05-13 | 合肥应为电子科技有限公司 | Millimeter wave band space radial power combiner |
| CN216903279U (en) * | 2022-03-18 | 2022-07-05 | 南京信息工程大学 | Terahertz wave quadrupler |
Non-Patent Citations (3)
| Title |
|---|
| A Multiple Scattering Method for Efficient Analysis of Substrate-Integrated Waveguide Structures;Xinxin Tian灯;IEEE Microwave and Wireless Components Letters;20200910;全文 * |
| 双通道太赫兹成像雷达研究;吴福伟;李元吉;刘振华;尚士泽;李大圣;;现代雷达;20180615(第06期);全文 * |
| 波导同轴谐振腔微波幅度均衡器的设计与实现;闫欢;李家胤;蒋运石;戴;王檠;兰洋;张卫;;磁性材料及器件;20080815(第04期);全文 * |
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