CN115110034B - High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof - Google Patents

High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof Download PDF

Info

Publication number
CN115110034B
CN115110034B CN202210685326.7A CN202210685326A CN115110034B CN 115110034 B CN115110034 B CN 115110034B CN 202210685326 A CN202210685326 A CN 202210685326A CN 115110034 B CN115110034 B CN 115110034B
Authority
CN
China
Prior art keywords
fecocr
composite film
magnetic code
performance
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210685326.7A
Other languages
Chinese (zh)
Other versions
CN115110034A (en
Inventor
于广华
刘锦涛
徐秀兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Maige Zhixin Electromechanical Technology Co ltd
Original Assignee
Shandong Maige Zhixin Electromechanical Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Maige Zhixin Electromechanical Technology Co ltd filed Critical Shandong Maige Zhixin Electromechanical Technology Co ltd
Priority to CN202210685326.7A priority Critical patent/CN115110034B/en
Publication of CN115110034A publication Critical patent/CN115110034A/en
Application granted granted Critical
Publication of CN115110034B publication Critical patent/CN115110034B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/083Oxides of refractory metals or yttrium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/16Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01DMEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/08Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/16Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

Abstract

The invention discloses a high-performance FeCoCr magnetic code disk composite film and a preparation method and application thereof. Aiming at the problem of poor comprehensive performance of the Si substrate/FeCoCr/Ta of the traditional magnetic code disk film material, the invention provides a method for improving the comprehensive performance by using a geometrical defect, and the material structure is the Si substrate/Ta 2 O 5 Heavy metal intercalation/FeCoCr/Ta 2 O 5 . The film is prepared by a magnetron sputtering method, and then the high-performance FeCoCr magnetic code disk composite film is prepared by vacuum annealing. The high-performance FeCoCr magnetic code disc composite film obtained by the invention has high coercive force and remanence, and can completely meet the practical application requirements of a magnetic encoder code disc.

Description

High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof
Technical Field
The invention belongs to the technical field of magnetic materials, and relates to a high-performance FeCoCr magnetic code disc composite film, and a preparation method and application thereof.
Background
The magnetic encoder is an electromagnetic sensitive element, and converts physical quantities such as angle, speed and the like in mechanical motion into digital electric signals, so that accurate positioning and servo control of the mechanical motion are realized. Compared with an optical encoder, the magnetic encoder has the advantages of simple structure, low cost, strong pollution resistance, strong compatibility and the like, and is widely applied to permanent magnet motors, high-end numerical control machines, automatic instrument equipment and the like. At present, the improvement of the precision of the encoder undoubtedly puts higher requirements on the performance of the magnetic code disc manufacturing material. The magnetic properties of the magnetic codewheel material directly affect the storage density and stability of the magnetic encoder. Currently, the magnetic code disk mainly adopts injection molding ferrite, feCoCr alloy and other bulk materials, and the main defect of the magnetic code disk is low storage density. In order to increase the storage density, development of thin film materials for magnetic code disks, such as FePt, smCo, coCrTa, etc., has been proposed. However, if the magnetic code disc is made of FePt and SmCo alloy thin film materials, the coercive force of the magnetic code disc is larger, and magnetic signals are difficult to write; although the CoCrTa alloy film has enough coercive force, the residual magnetism of the CoCrTa alloy film is low when the CoCrTa alloy film is applied to preparation of a magnetic code disc. Therefore, in order to find a film material really suitable for preparing the magnetic code disc, a FeCoCr alloy film with higher coercive force and certain remanence enters the field of vision of people. The coercive force and the remanence are important indexes for measuring the magnetic performance of the material, and the magnetic energy product and the external disturbance resistance of the magnetic material are directly influenced. In the past research on FeCoCr thin films, the coercivity of a material is often improved by designing the composition and adjusting the annealing process. However, these two factors have a certain influence on the coercivity, but the coercivity cannot be greatly increased. For the improvement of the coercive force of the magnetic film, the current international methods mainly comprise element doping, intercalation and the like. Among them, some researches have found that the segregation of diffused Nb atoms at the grain boundary and Co generate a cobb nonmagnetic phase, which increases the coercivity by the pinning effect on the magnetic domain, but the grain boundary segregation of nonmagnetic elements also weakens the coupling effect between grains, resulting in a large reduction in remanence, which is not favorable for practical application.
Therefore, a FeCoCr magnetic code disk material with high coercive force and remanence is needed.
Disclosure of Invention
Aiming at solving the problem of poor comprehensive performance of Si substrate/FeCoCr/Ta of the traditional magnetic code disk film material, the invention provides a method for improving the comprehensive performance by using a geometrical defect, wherein the material structure is Si substrate/Ta 2 O 5 Heavy metal intercalation FeCoCr/Ta 2 O 5 . The film is prepared by a magnetron sputtering method, and then the high-performance FeCoCr magnetic code disk composite film is prepared by vacuum annealing. The high-performance FeCoCr magnetic code disc composite film obtained by the invention has high coercive force and remanence, and can completely meet the practical application requirements of a magnetic encoder code disc.
One of the objectives of the present invention is to provide a high performance FeCoCr magnetic code disk composite film, which comprises at least the following composite layers: si substrate/first Ta 2 O 5 Layer/heavy metal intercalation/FeCoCr layer/second Ta 2 O 5 A layer;
and the heavy metal in the heavy metal intercalation is at least one of Pb and Au.
In the high-performance FeCoCr magnetic code disk composite film of the invention, preferably,
first Ta 2 O 5 Layer, second Ta 2 O 5 The thickness of the layers is the same or different, each independently being 3-5 nm, for example, 3nm, 4nm, 5nm, and any range between any two values;
the thickness of the heavy metal intercalation is 5-20 nm, preferably 5-10 nm, such as 5nm, 6nm, 7nm, 8nm, 9nm, 10nm and the range formed by any two values;
the thickness of the FeCoCr layer is 100-300 nm, and may be, for example, 100nm, 150nm, 200nm, 250nm, 30nm, or any combination thereof.
In the high-performance FeCoCr magnetic code disk composite film of the invention, preferably,
the coercive force of the high-performance FeCoCr magnetic code disk composite film is 500-800 Oe, for example, the coercive force can be in a range of 500Oe, 600Oe, 700Oe and 800Oe and any two values; the remanence is 5000 to 8000Oe, such as 5000Oe, 6000Oe, 7000Oe, 8000Oe and any two values between the range.
The second purpose of the invention is to provide a preparation method of the high-performance FeCoCr magnetic code disk composite film,
preparing first Ta on a Si substrate in sequence by a magnetron sputtering method 2 O 5 Layer/heavy metal intercalation/FeCoCr layer/second Ta 2 O 5 And then carrying out vacuum annealing on the prepared composite film to obtain the high-performance FeCoCr magnetic code disk composite film.
In the preparation method of the high-performance FeCoCr magnetic code disk composite film, preferably,
first Ta 2 O 5 The layer is RF sputtered, preferably first Ta 2 O 5 The sputtering power of the layer is 50-100 w, such as 50w, 60w, 70w, 80w, 90w, 100w, and ranges between any two values; the sputtering time is 15-20 min, for example, 15min, 16min, 17min, 18min, 19min, 20min and the range formed by any two values.
In the preparation method of the high-performance FeCoCr magnetic code disk composite film, preferably,
the heavy metal intercalation adopts direct current sputtering, the sputtering power of the heavy metal intercalation is 15-30 w, for example, the sputtering power can be 15w, 20w, 25w, 30w and the range formed by any two values; the sputtering time is 15-20 min, for example, 15min, 16min, 17min, 18min, 19min, 20min and the range formed by any two values.
In the preparation method of the high-performance FeCoCr magnetic code disk composite film, preferably,
the FeCoCr layer is sputtered by direct current, preferably, the sputtering power of the FeCoCr layer is 15-30 w, such as 15w, 20w, 25w, 30w and the range formed by any two values; the sputtering time is 40min to 120min, for example, 40min, 50min, 60min, 70min, 80min, 90min, 100min, 110min, 120min and the range formed by any two values.
In the preparation method of the high-performance FeCoCr magnetic code disk composite film, preferably,
second Ta 2 O 5 The layer is RF sputtered, preferably of a second Ta 2 O 5 The sputtering power of the layer is 50-100 w, for example, 50w, 60w, 70w, 80w, 90w, 100w and the range of any two values; the sputtering time is 15-20 min, for example, 15min, 16min, 17min, 18min, 19min, 20min and the range formed by any two values.
In the preparation method of the high-performance FeCoCr magnetic code disk composite film, preferably,
the vacuum annealing condition is that the temperature is firstly increased to 695-705 ℃, the temperature is preserved for 30-60 min, then the temperature is reduced to 625-635 ℃, the temperature is preserved for 30-60 min, and then the temperature is cooled to the room temperature;
the degree of vacuum during vacuum annealing was 5X 10 -5 Pa~1×10 -6 Pa。
The third purpose of the invention is to provide the application of the high-performance FeCoCr magnetic code disc composite film or the high-performance FeCoCr magnetic code disc composite film prepared by the preparation method in the second purpose of the invention in a code disc material of a magnetic encoder.
The invention adopts Pb and Au heavy metals, so that when the film is annealed at high temperature, the non-magnetic large atoms are diffused to form vacancy defects in the film, which are called as 'geometric defects', and the defects can be used as 'magnetic domain' pinning and are beneficial to improving the coercivity. Ta 2 O 5 As a protective layer, the FeCoCr layer can be prevented from being oxidized to lose the magnetism; meanwhile, a small amount of unoxidized Ta atoms can form a small amount of nonmagnetic phase with Fe, and the Ta atoms are also favorable geometrical defects. The FeCoCr film prepared by the method has high magnetic energy product and good comprehensive performance. And Pb and Au can not weaken the coupling effect among the crystal grains, and can not cause the large reduction of remanence because the coupling effect among the crystal grains is subjected to segregation at the crystal boundary, thereby ensuring higher remanence. However, in the prior art, the Nb atoms weaken the coupling effect among crystal grains, so that the Nb atoms in the prior art have different functions with Pb and Au in the heavy metal intercalation.
In the art, a vacancy defect in a magnetic material may or may not have an effect on the magnetic properties of the material; if the influence is large, the influence is small sometimes; depending on the design of the vacancy defects, mainly depending on the type and distribution of the vacancy defects, etc.; sometimes the coercivity may be increased to different extents and sometimes it may be decreased to different extents. Therefore, it cannot be said that the number of vacancy defects increases, and the coercive force is certainly increased. According to the invention, a proper vacancy defect is formed in the FeCoCr layer by selecting Pb and Au heavy metals and adjusting the thickness of the Pb and Au heavy metal intercalation layer, the thickness of the FeCoCr layer and the like, so that the coercive force is improved.
The thickness of the heavy metal intercalation in the invention is not similar to the conventional thickness in the prior art, and the common intercalation only has a few atomic layers which are much smaller than the current thickness. The thickness of the other layers is significantly different from the conventional thickness, for example, the thickness of FeCoCr is much thicker than that of the conventional magnetic thin film.
The technical scheme of the invention has the following beneficial effects:
the preparation method of the FeCoCr magnetic code disk thin film material is simple, convenient to control, high in efficiency and low in cost.
The invention can make the FeCoCr film have better comprehensive performance and can completely meet the practical application requirement of the code disc of the magnetic encoder.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a magnetic hysteresis loop diagram of a high performance FeCoCr magnetic code disk composite film of example 1 of the present invention.
Wherein the abscissa H (kOe) in fig. 1: magnetic field strength; ordinate M (kOe): the magnetization intensity.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
Example 1
The film sample structure was: si substrate/Ta 2 O 5 (5nm)/Pb(10nm)/FeCoCr(100nm)/Ta 2 O 5 (5 nm). Preparing the above film by magnetron sputtering method, wherein the first Ta 2 O 5 Layer, second Ta 2 O 5 Layer is RF sputtered, first Ta 2 O 5 Layer, second Ta 2 O 5 The sputtering power of the layer is 100w, the sputtering time is 20min, the heavy metal intercalation Pb adopts direct current sputtering, and the sputtering work of the heavy metal intercalationThe rate was 20w and the sputtering time was 18min. The FeCoCr layer is sputtered by direct current, the sputtering power of the FeCoCr layer is 15w, and the sputtering time is 40min. Vacuum graded annealing comprises heating to 700 deg.C, holding for 30min, cooling to 630 deg.C, holding for 40min, cooling to room temperature with vacuum degree of 5 × 10 -5 Pa。
By the method, the high-performance FeCoCr magnetic code disk composite film prepared by the invention is a Si substrate/Ta 2 O 5 (5nm)/Pb(10nm)/FeCoCr(100nm)/Ta 2 O 5 (5 nm), the hysteresis loop test was performed on the film, and as a result, as shown in FIG. 1, the magnetic properties: coercivity Hc =600Oe; residual magnetism Mr =5699Oe; saturation magnetization Ms =8765Oe; the remanence ratio Mr/Ms =0.65.
Example 2
It is the same as the preparation method of example 1 except that the heavy metal is intercalated as Au, wherein the first Ta 2 O 5 Layer, second Ta 2 O 5 Layer is RF sputtered, first Ta 2 O 5 Layer, second Ta 2 O 5 The sputtering power of the layer is 100w, the sputtering time is 20min, the heavy metal intercalation Pb adopts direct current sputtering, the sputtering power of the heavy metal intercalation is 25w, and the sputtering time is 16min. The FeCoCr layer is sputtered by direct current, the sputtering power of the FeCoCr layer is 15w, and the sputtering time is 40min. Vacuum graded annealing is carried out by heating to 700 deg.C, keeping the temperature for 30min, cooling to 630 deg.C, keeping the temperature for 60min, and cooling to room temperature, wherein the vacuum degree during vacuum annealing is 5 × 10 -6 Pa。
The prepared FeCoCr magnetic code disc composite film is Si substrate/Ta 2 O 5 (5nm)/Au(10nm)/FeCoCr(100nm)/Ta 2 O 5 (5 nm). Magnetic property: coercivity Hc =560Oe; residual magnetism Mr =5400Oe; saturation magnetization Ms =8700Oe; the remanence ratio Mr/Ms =0.63.
Example 3
It is the same as the preparation method of example 1, except that the heavy metal is intercalated as Au, wherein the first Ta 2 O 5 Layer, second Ta 2 O 5 Layer is RF sputtered, first Ta 2 O 5 Layer, second Ta 2 O 5 The sputtering power of the layer is 50w and the sputtering time isAnd (3) 20min, performing direct current sputtering on the heavy metal intercalation Pb, wherein the sputtering power of the heavy metal intercalation Pb is 20w, and the sputtering time is 15min. The FeCoCr layer is sputtered by direct current, the sputtering power of the FeCoCr layer is 30w, and the sputtering time is 60min. Vacuum graded annealing is carried out by heating to 695 deg.C, keeping the temperature for 50min, cooling to 635 deg.C, keeping the temperature for 30min, and cooling to room temperature, wherein the vacuum degree during vacuum annealing is 5 × 10 -6 Pa。
The prepared FeCoCr magnetic code disc composite film is Si substrate/Ta 2 O 5 (4nm)/Au(8nm)/FeCoCr(200nm)/Ta 2 O 5 (4 nm). Magnetic property: coercivity Hc =560Oe; residual magnetism Mr =5400Oe; saturation magnetization Ms =8700Oe; the remanence ratio Mr/Ms =0.63.
Comparative example 1
The method is the same as the preparation method of the embodiment 1, and is different only in that the method does not contain heavy metal intercalation, and the prepared FeCoCr magnetic code disc composite film is Si substrate/Ta 2O5 (5 nm)/FeCoCr (100 nm)/Ta 2O5 (5 nm). Magnetic property: coercivity Hc =400Oe; residual magnetism Mr =5300Oe; saturation magnetization Ms =8000Oe; the remanence ratio Mr/Ms =0.57.
Comparative example 2
It is the same as the preparation in example 1, except that Ta is not contained 2 O 5 The prepared FeCoCr magnetic code disc composite film is a Si substrate/Pb (10 nm)/FeCoCr (100 nm)/Ta 2 O 5 (5 nm). Magnetic property: coercivity Hc =510Oe; residual magnetism Mr =5200Oe; saturation magnetization Ms =8100Oe; the remanence ratio Mr/Ms =0.55.
Comparative example 3
The method is the same as the preparation method of the embodiment 1, and only comprises a FeCoCr layer, and the prepared FeCoCr magnetic code disc composite film is a Si substrate/FeCoCr (100 nm). Magnetic property: coercivity Hc =300Oe; remanence Mr =4600Oe; saturation magnetization Ms =7900Oe; the remanence ratio Mr/Ms =0.5.
Comparative example 4
The preparation method is the same as that of the embodiment 1, and the difference is that the heavy metal intercalation is Nb, and the prepared FeCoCr magnetic code disc composite film is Si substrate/Ta 2 O 5 (5nm)/Nb(10nm)/FeCoCr(100nm)/Ta 2 O 5 (5 nm). Magnetic property: coercivity Hc =450Oe;residual magnetism Mr =3000Oe; saturation magnetization Ms =7600Oe; the remanence ratio Mr/Ms =0.55.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (12)

1. A high-performance FeCoCr magnetic code disk composite film is characterized by comprising at least the following composite layers: si substrate/first Ta 2 O 5 Layer/heavy metal intercalation/FeCoCr layer/second Ta 2 O 5 A layer;
the heavy metal in the heavy metal intercalation is at least one of Pb and Au;
first Ta 2 O 5 Layer, second Ta 2 O 5 The thickness of the layers is the same or different and is independently 3 to 5nm;
the thickness of the heavy metal intercalation is 5-20 nm;
the thickness of the FeCoCr layer is 100-300 nm;
the coercive force of the high-performance FeCoCr magnetic code disk composite film is 500-800 Oe; the remanence is 5000-8000 Oe.
2. The high performance FeCoCr magnetic code disk composite film according to claim 1,
the thickness of the heavy metal intercalation is 5-10 nm.
3. The method for preparing a high performance FeCoCr magnetic code disk composite film according to any one of claims 1-2,
preparing first Ta on a Si substrate in sequence by a magnetron sputtering method 2 O 5 Layer/heavy metal intercalation/FeCoCr layer/second Ta 2 O 5 And then carrying out vacuum annealing on the prepared composite film to obtain the high-performance FeCoCr magnetic code disk composite film.
4. The method for preparing a high performance FeCoCr magnetic code disk composite film according to claim 3,
first Ta 2 O 5 The layers are rf sputtered.
5. The method for preparing a high-performance FeCoCr magnetic code disk composite film according to claim 4,
first Ta 2 O 5 The sputtering power of the layer is 50-100W, and the sputtering time is 15-20 min.
6. The method for preparing a high performance FeCoCr magnetic code disk composite film according to claim 3,
the heavy metal intercalation adopts direct current sputtering, the sputtering power of the heavy metal intercalation is 15-30W, and the sputtering time is 15-20 min.
7. The method for preparing a high performance FeCoCr magnetic code disk composite film according to claim 3,
the FeCoCr layer is sputtered by direct current.
8. The method for preparing a high performance FeCoCr magnetic code disk composite film according to claim 7,
the sputtering power of the FeCoCr layer is 15-30W, and the sputtering time is 40-120 min.
9. The method for preparing a high performance FeCoCr magnetic code disk composite film according to claim 3,
second Ta 2 O 5 The layers are radio frequency sputtered.
10. The method for preparing a high performance FeCoCr magnetic code disk composite film according to claim 9,
second Ta 2 O 5 The sputtering power of the layer is 50-100W, and the sputtering time is 15-20 min.
11. The method for preparing a high performance FeCoCr magnetic code disk composite film according to claim 3,
the vacuum annealing condition is that the temperature is firstly increased to 695-705 ℃, the temperature is preserved for 30-60 min, then the temperature is reduced to 625-635 ℃, the temperature is preserved for 30-60 min, and then the temperature is cooled to the room temperature;
the degree of vacuum during vacuum annealing was 5X 10 -5 Pa~1×10 -6 Pa。
12. The use of the high-performance FeCoCr magnetic code disc composite film according to any one of claims 1-2 or the high-performance FeCoCr magnetic code disc composite film prepared by the preparation method according to any one of claims 3-11 as a code disc material of a magnetic encoder.
CN202210685326.7A 2022-06-17 2022-06-17 High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof Active CN115110034B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210685326.7A CN115110034B (en) 2022-06-17 2022-06-17 High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210685326.7A CN115110034B (en) 2022-06-17 2022-06-17 High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof

Publications (2)

Publication Number Publication Date
CN115110034A CN115110034A (en) 2022-09-27
CN115110034B true CN115110034B (en) 2023-04-18

Family

ID=83329061

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210685326.7A Active CN115110034B (en) 2022-06-17 2022-06-17 High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof

Country Status (1)

Country Link
CN (1) CN115110034B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103682087A (en) * 2013-12-27 2014-03-26 复旦大学 Method for effectively enhancing vertical coercivity of magnetic multilayer film
US20210158849A1 (en) * 2018-04-18 2021-05-27 Tohoku University Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103682087A (en) * 2013-12-27 2014-03-26 复旦大学 Method for effectively enhancing vertical coercivity of magnetic multilayer film
US20210158849A1 (en) * 2018-04-18 2021-05-27 Tohoku University Magnetoresistive element, magnetic memory device, and writing and reading method for magnetic memory device

Also Published As

Publication number Publication date
CN115110034A (en) 2022-09-27

Similar Documents

Publication Publication Date Title
Luo et al. Magnetic properties and structure of Fe/Pt thin films
US5910344A (en) Method of manufacturing a magnetoresistive sensor
US5998048A (en) Article comprising anisotropic Co-Fe-Cr-N soft magnetic thin films
JP3285937B2 (en) Magnetic multilayer film, magnetoresistive variable element, and manufacturing method thereof
Shimada et al. Granular thin films with high RF permeability
JP2002123920A (en) Magnetic recording medium
JP2001101645A (en) High density information recording medium and method for manufacturing the medium
JP3274318B2 (en) Thin film magnetic head
Ohashi et al. Write performance of heads with a 2.1-Tesla CoNiFe pole
US4003768A (en) Method for treating magnetic alloy to increase the magnetic permeability
CN115110034B (en) High-performance FeCoCr magnetic code disk composite film and preparation method and application thereof
Matthes et al. Magnetotransport properties of perpendicular [Pt/Co]/Cu/[Co/Pt] pseudo-spin-valves
Katada et al. Soft magnetic properties and microstructure of NiFe (Cr)/FeCo/NiFe (Cr) films with large saturation magnetization
Katada et al. Induced uniaxial magnetic anisotropy field in very thin NiFe and CoZrNb films
Inaba et al. Damping constants of Ni-Fe and Ni-Co alloy thin films
Inturi et al. Practical FeCo films for perpendicular writer pole
US20030133223A1 (en) Magnetic recording head with annealed multilayer, high moment structure
US5413868A (en) Perpendicular magnetic recording medium comprising a magnetic thin film of cobalt, palladium, chromium and oxygen
Carcia et al. The magnetic and microstructural properties of Pt/Co multilayers grown on ZnO
Jones Jr Fabrication of film heads with high moment materials
Bernards et al. CoCr double‐layered media with NiFe and CoZrNb soft‐magnetic layers
JPH0845035A (en) Thin film magnetic head
JP3869550B2 (en) Magnetic recording medium and magnetic storage device
CN117577413A (en) AlNiCo magnetic film material and preparation method and application thereof
Chen et al. Laminated FeRhN films for high speed writers

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant