CN115108733A - Method for patterning all-inorganic perovskite microcrystal composite film - Google Patents
Method for patterning all-inorganic perovskite microcrystal composite film Download PDFInfo
- Publication number
- CN115108733A CN115108733A CN202210782240.6A CN202210782240A CN115108733A CN 115108733 A CN115108733 A CN 115108733A CN 202210782240 A CN202210782240 A CN 202210782240A CN 115108733 A CN115108733 A CN 115108733A
- Authority
- CN
- China
- Prior art keywords
- inorganic perovskite
- microcrystal
- composite film
- dispersion liquid
- patterning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/30—Three-dimensional structures
- C01P2002/34—Three-dimensional structures perovskite-type (ABO3)
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/60—Optical properties, e.g. expressed in CIELAB-values
Abstract
The invention discloses a patterning method of an all-inorganic perovskite microcrystal composite film, which comprises the following steps: step A: injecting the dispersion liquid of the all-inorganic perovskite precursor into a poor solvent A, and centrifuging to obtain an all-inorganic perovskite microcrystal precipitate; and B: dispersing the all-inorganic perovskite microcrystal precipitate into a polymer solution to obtain an all-inorganic perovskite microcrystal polymer composite dispersion liquid; spin-coating the full-inorganic perovskite microcrystalline polymer composite dispersion liquid on a glass substrate by adopting a spin-coating method, and preparing a full-inorganic perovskite microcrystalline composite film on the glass substrate; and C: and covering a PDMS pattern template on the all-inorganic perovskite microcrystal composite film, heating and drying, and removing the PDMS pattern template after drying to obtain the patterned all-inorganic perovskite microcrystal composite film. The patterning method is simple and easy to implement, low in cost, free of damage to the structure of the lower layer due to the bottom-up patterning method, and suitable for construction of micro-nano devices.
Description
Technical Field
The invention relates to the technical field of perovskite microcrystal patterning. In particular to a method for patterning an all-inorganic perovskite microcrystal composite film.
Background
The hybrid perovskite has a plurality of excellent characteristics, such as solution-process preparation, adjustable band gap, high carrier mobility, long carrier diffusion distance and the like, and is widely applied to research on high-performance optoelectronic devices such as photovoltaics, light emitting diodes, lasers, field effect transistors, detectors and the like. However, the stability of hybrid perovskite materials has always been difficult to effectively solve, limiting their large-scale applications. At present, researchers form a 2D/3D composite perovskite quantum well structure by introducing long-chain organic cations, so that exciton binding energy is enhanced, and the yield and stability of fluorescence quantum are improved. However, the thin film structure is a multi-phase complex component, has low intrinsic thermal stability and a complex internal photochemical process, and limits further application of the thin film structure in perovskite devices. In addition, the patterned micro-nano structure surface has unique physicochemical characteristics, such as super-hydrophilic/hydrophobic property, surface chemical reaction, optical reflection/absorption and the like, and has wide application prospects in biological and chemical sensing, energy conversion, microelectronics, solar cells and other aspects. Limited by the poor stability of perovskite, sensitivity to ultraviolet light, water and most organic solvents, and conventional patterning replication techniques such as photolithography, electron beam lithography, and the like are difficult to apply to perovskite materials. Therefore, the development of a simple and economic perovskite patterning method is the key for the application of the perovskite material in the micro-nano device.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to provide a method for patterning an all-inorganic perovskite/microcrystalline composite thin film, so as to solve the problems of low intrinsic thermal stability, complex internal photochemical process, difficult patterning due to poor perovskite stability, etc. of the existing perovskite thin film caused by the introduction of long-chain organic components and having a complex multi-phase structure.
In order to solve the technical problems, the invention provides the following technical scheme:
a method for patterning an all-inorganic perovskite microcrystal composite film comprises the following steps:
step A: injecting the all-inorganic perovskite precursor dispersion liquid into a poor solvent A, and centrifuging to obtain an all-inorganic perovskite microcrystal precipitate;
and B: dispersing the all-inorganic perovskite microcrystal precipitate into a polymer solution to obtain an all-inorganic perovskite microcrystal polymer composite dispersion liquid; spin-coating the full-inorganic perovskite microcrystalline polymer composite dispersion liquid on a glass substrate by adopting a spin-coating method, and preparing a full-inorganic perovskite microcrystalline composite film on the glass substrate;
and C: and covering a PDMS pattern template on the all-inorganic perovskite microcrystal composite film, heating and drying, and removing the PDMS pattern template after drying to obtain the patterned all-inorganic perovskite microcrystal composite film.
In the step a, the preparation method of the all-inorganic perovskite precursor dispersion liquid comprises the following steps: CsX and PbX are mixed 2 Mixing to obtain the mixed raw material of the all-inorganic perovskite precursor, CsX and PbX 2 In the formula, X is Cl, Br or I; and then adding the mixed raw material of the all-inorganic perovskite precursor into N, N-dimethylformamide DMF or dimethyl sulfoxide DMSO, and stirring and mixing uniformly to obtain the dispersion liquid of the all-inorganic perovskite precursor.
CsX and PbX, the method for patterning the all-inorganic perovskite microcrystal composite film 2 The amount of (b) is 1 to 1.5:1 relative to PbX 2 While the addition of excess CsX is beneficial in inhibiting the growth of inorganic perovskite crystallites, too much CsX is ineffective and results in wasted material, and in addition, excess CsX can also lead to impurities when CsX and PbX are used 2 When the mass ratio of the inorganic perovskite micro-crystal is 1-1.5: 1, the growth of the inorganic perovskite micro-crystal can be obviously inhibited, and the appearance of impurity phase can not be caused; PbX in all-inorganic perovskite precursor dispersion liquid 2 The amount concentration of the substance(s) is 0.01 to 0.04 mol/L. If PbX 2 Too high a concentration of the species leads to large particles of the prepared all-inorganic perovskite crystallites, and lower a concentration of the species leads to low yields of all-inorganic perovskite crystallites.
The above-mentioned all-inorganic perovskite microcrystal composite film diagramIn the step A, the poor solvent A is toluene or chlorobenzene (the poor solvent can not dissolve perovskite microcrystal), the volume ratio of the all-inorganic perovskite precursor dispersion liquid to the poor solvent A is 1: 10-50 (under the volume ratio, the high solubility of the all-inorganic perovskite precursor mixed raw material in the precursor dispersion liquid is utilized, and when the mixed raw material is injected into the poor solvent, more all-inorganic perovskite microcrystal can be precipitated); the centrifugation speed is 8000rpm, and the centrifugation time is 5-8 min; the chemical formula of the all-inorganic perovskite microcrystal precipitation is CsPbX 3 And X is Cl, Br or I.
In the step B, the preparation method of the polymer solution comprises the following steps: adding polymethyl methacrylate (PMMA) or Polystyrene (PS) into a poor solvent B for dissolving, and stirring and mixing uniformly to obtain a polymer solution.
According to the method for patterning the all-inorganic perovskite microcrystal composite film, the mass concentration of polymethyl methacrylate (PMMA) or Polystyrene (PS) in a polymer solution is 5-10 mg/mL; the poor solvent B is toluene or chlorobenzene. The polymer solution with the concentration is used for coating the inorganic perovskite microcrystal, so that water and oxygen can be effectively isolated, and the stability of the inorganic perovskite is improved. If the concentration of the polymer solution is too low, the coating effect is poor, and the stability of the obtained inorganic perovskite is not satisfactory, and if the concentration of the polymer solution is too high, the conductivity of the obtained inorganic perovskite is deteriorated, and it is difficult to achieve the desired effect when the polymer solution is used in a device. Toluene or chlorobenzene is used as a poor solvent B to obtain a full-inorganic perovskite microcrystalline polymer composite dispersion liquid with good stability, which is beneficial to obtaining a more ideal full-inorganic perovskite microcrystalline composite film through subsequent preparation; however, this effect cannot be obtained by using another solvent as the poor solvent B.
In the step B, the ratio of the mass of the all-inorganic perovskite microcrystal precipitate to the volume of the polymer solution is 5-10 mg/mL; if the ratio is lower than 5mg/mL, the prepared all-inorganic perovskite microcrystal composite film has poor conductivity, and if the ratio is higher than 10mg/mL, the polymer cannot completely coat the all-inorganic perovskite microcrystal, so that the stability of the all-inorganic perovskite microcrystal composite film is influenced.
In the step C, before the PDMS pattern template is covered on the all-inorganic perovskite microcrystal composite film, the PDMS pattern template is soaked in a poor solvent C for 1-2 min.
In the step C, the heating and drying temperature is 80-110 ℃, and the heating and drying time is 10-30 min (too high drying temperature and too long drying time are easy to cause inorganic perovskite decomposition); the poor solvent C is acetone [ acetone ] which can rapidly dissolve the polymer and does not damage the all-inorganic perovskite; toluene and chlorobenzene dissolve too slowly to facilitate patterning; the time interval between the step B and the step C is 3-5 min; if the time is too long, the film is completely cured, and it is difficult to pattern the film using the PDMS template.
In the step a, the preparation method of the all-inorganic perovskite precursor dispersion liquid comprises the following steps: CsX and PbX 2 Mixing according to the mass ratio of 1.2:1 to obtain the all-inorganic perovskite precursor mixed raw material CsX and PbX 2 In the formula, X is Cl, Br or I; then adding the mixed raw material of the all-inorganic perovskite precursor into N, N-dimethylformamide DMF, stirring and mixing uniformly to obtain an all-inorganic perovskite precursor dispersion liquid, wherein the mass concentration of the mixed raw material of the all-inorganic perovskite precursor in the all-inorganic perovskite precursor dispersion liquid is 0.01 mol/L; the poor solvent A is toluene, and the volume ratio of the all-inorganic perovskite precursor dispersion liquid to the poor solvent A is 1: 20; the centrifugation speed is 8000rpm, and the centrifugation time is 5 min;
in the step B, the preparation method of the polymer solution comprises the following steps: adding polymethyl methacrylate (PMMA) into a poor solvent B chlorobenzene for dissolving, and stirring and mixing uniformly to obtain a polymer solution; the mass concentration of polymethyl methacrylate PMMA in the polymer solution is 8 mg/mL;
in the step C, the ratio of the mass of the all-inorganic perovskite microcrystal precipitate to the volume of the polymer solution is 10 mg/mL; before a PDMS pattern template is covered on the all-inorganic perovskite microcrystal composite film, soaking the PDMS pattern template in a poor solvent C acetone for 1 min; the heating and drying temperature is 100 ℃, and the heating and drying time is 15 min; the time interval between step B and step C was 5 min.
The technical scheme of the invention achieves the following beneficial technical effects:
the method adopts an all-inorganic perovskite material, and remarkably improves the stability of the prepared perovskite microcrystalline film through polymer coating. The PDMS template is adopted to pattern the all-inorganic perovskite microcrystal composite film, so that the application value of the all-inorganic perovskite microcrystal composite film in a micro-nano device is improved. Specifically, the advantages of the present invention over the prior art are: (1) the synthesis method does not add long-chain organic ammonium salt, and the prepared perovskite microcrystal has high purity and good stability; (2) the polymer coats the perovskite microcrystal, so that the stability and film-forming property of the perovskite microcrystal material are obviously improved; (3) the patterning method is simple and easy to implement, low in cost, free of damage to the structure of the lower layer due to the bottom-up patterning method, and suitable for construction of micro-nano devices.
Drawings
FIG. 1 is an XRD pattern of an all inorganic perovskite microcrystalline composite thin film prepared in example 1 of the present invention;
FIG. 2 is a graph showing the emission spectrum of the all-inorganic perovskite/microcrystalline composite thin film prepared in example 1 of the present invention;
FIG. 3 is a fluorescence diagram of an all-inorganic perovskite microcrystalline polymer composite dispersion prepared in example 1 of the present invention;
fig. 4 is an SEM picture of the patterned all-inorganic perovskite microcrystalline composite thin film prepared in example 2 of the present invention.
Detailed Description
Example 1
The method for patterning the all-inorganic perovskite microcrystalline composite film comprises the following steps:
step A: 51.1mg CsBr and 73.4mg PbBr 2 Adding the mixture into 10mL of N, N-dimethylformamide DMF solvent to prepare an all-inorganic perovskite precursor dispersion liquid; 1mL of all-nothingQuickly injecting the organic perovskite precursor dispersion into 10mL of poor solvent A toluene, centrifuging at 8000rpm for 5min to obtain all-inorganic perovskite microcrystal precipitate, namely CsPbBr 3 All-inorganic perovskite crystallites;
and B, step B: dispersing the all-inorganic perovskite microcrystal precipitate obtained in the step A into a polymer solution, wherein the ratio of the mass of the all-inorganic perovskite microcrystal precipitate to the volume of the polymer solution is 8mg/mL, so as to obtain an all-inorganic perovskite microcrystal polymer composite dispersion liquid; spin-coating the all-inorganic perovskite microcrystalline polymer composite dispersion liquid on a glass substrate at the speed of 3000rpm by adopting a spin-coating method to prepare an all-inorganic perovskite microcrystalline composite film; the preparation method of the polymer solution comprises the following steps: adding polymethyl methacrylate (PMMA) into a poor solvent B chlorobenzene according to a ratio to dissolve, and stirring and mixing uniformly to obtain a polymer solution with the mass concentration of 5 mg/mL;
and C: after the preparation of the all-inorganic perovskite microcrystal composite film is completed for 3min, a PDMS pattern template (PDMS (polydimethylsiloxane) soft template) with a stripe micro-nano structure is added on the all-inorganic perovskite microcrystal composite film in a capping mode, the PDMS pattern template is soaked in poor solvent C acetone for 1min before use, the poor solvent C acetone can be used for partially corroding the all-inorganic perovskite microcrystal composite film, the patterning is facilitated, and the damage to the all-inorganic perovskite microcrystal cannot be caused; if the soaking time is too long, the PDMS template absorbing excessive poor solvent C may cause the damage of the whole film structure of the all-inorganic perovskite/microcrystalline composite film; and then putting the materials together on a hot bench, heating and drying the materials for 15min at the temperature of 100 ℃ (if the heating temperature is too low during drying, the polymer coating the all-inorganic perovskite microcrystal is difficult to cure, and if the heating temperature is too high, partial decomposition of the perovskite material can be caused), and removing the PDMS pattern template after drying is finished, thus obtaining the patterned all-inorganic perovskite microcrystal composite film.
The purity of the all-inorganic perovskite microcrystal prepared by the embodiment reaches 98.6 percent; as can be seen from figure 1, the XRD pattern of the all-inorganic perovskite composite film has narrow half-peak width, and the prepared all-inorganic perovskite microcrystal has larger particles and better crystallinity, thereby being beneficial toTo improve the stability of the perovskite; from FIGS. 2 and 3, CsPbBr can be seen 3 The microcrystalline solution has high luminous intensity, and the emission spectrum is 515 nm.
Example 2
The method for patterning the all-inorganic perovskite microcrystalline composite film comprises the following steps:
step A: 12.6mg CsCl and 13.9mg PbCl were added 2 Adding the precursor into 5mL of N, N-dimethylformamide DMF solvent to prepare all-inorganic perovskite precursor dispersion liquid; quickly injecting 1mL of all-inorganic perovskite precursor dispersion into 20mL of poor solvent A chlorobenzene, centrifuging at 8000rpm for 5min to obtain all-inorganic perovskite microcrystal precipitate, namely CsPbCl 3 All-inorganic perovskite crystallites;
and B: dispersing the all-inorganic perovskite microcrystal precipitate obtained in the step A into a polymer solution, wherein the ratio of the mass of the all-inorganic perovskite microcrystal precipitate to the volume of the polymer solution is 10mg/mL, so as to obtain an all-inorganic perovskite microcrystal polymer composite dispersion liquid; spin-coating the all-inorganic perovskite microcrystalline polymer composite dispersion liquid on a glass substrate at the speed of 3000rpm by adopting a spin-coating method to prepare an all-inorganic perovskite microcrystalline composite film; the preparation method of the polymer solution comprises the following steps: adding polymethyl methacrylate (PMMA) into a poor solvent B chlorobenzene according to a ratio to dissolve, and stirring and mixing uniformly to obtain a polymer solution with the mass concentration of 8 mg/mL;
and C: after the preparation of the all-inorganic perovskite microcrystalline composite film is finished for 5min, covering a PDMS pattern template (PDMS (polydimethylsiloxane) soft template) with a stripe micro-nano structure on the all-inorganic perovskite microcrystalline composite film, and soaking the PDMS pattern template in a poor solvent C acetone for 1min before use; and then putting the film and the substrate together on a hot table, heating and drying the film and the substrate for 15min at the temperature of 100 ℃, and removing the PDMS pattern template after drying to obtain the patterned all-inorganic perovskite microcrystalline composite film.
The purity of the all-inorganic perovskite microcrystal prepared by the embodiment reaches 99.3 percent; the full-inorganic perovskite composite film prepared by the embodiment has narrow XRD spectrum half-peak width, larger full-inorganic perovskite microcrystal particles and better crystallinity, and is beneficial to improving the stability of perovskite. As can be seen from FIG. 4, the periodic stripe pattern is successfully prepared on the perovskite micro-nano crystal composite film in the embodiment, the stripe width and the spacing are about 20 microns, the structure is regular, and the above fine particles are perovskite micro-crystals.
In conclusion, the all-inorganic perovskite microcrystal composite film prepared by the method improves the stability of perovskite microcrystal and realizes the patterning of the film. The method is a simple and rapid perovskite microcrystal patterning method, and has important application value in the fields of micro-nano laser, display, photoelectric detection and the like.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. And obvious variations or modifications derived therefrom are intended to be within the scope of the claims of this patent.
Claims (10)
1. A method for patterning an all-inorganic perovskite microcrystal composite film is characterized by comprising the following steps:
step A: injecting the dispersion liquid of the all-inorganic perovskite precursor into a poor solvent A, and centrifuging to obtain an all-inorganic perovskite microcrystal precipitate;
and B: dispersing the all-inorganic perovskite microcrystal precipitate into a polymer solution to obtain an all-inorganic perovskite microcrystal polymer composite dispersion liquid; spin-coating the all-inorganic perovskite/microcrystalline polymer composite dispersion liquid on a glass substrate by adopting a spin-coating method, and preparing an all-inorganic perovskite/microcrystalline composite film on the glass substrate;
and C: and covering a PDMS pattern template on the all-inorganic perovskite microcrystal composite film, heating and drying, and removing the PDMS pattern template after drying is finished to obtain the patterned all-inorganic perovskite microcrystal composite film.
2. The method for patterning the all-inorganic perovskite microcrystalline composite thin film according to claim 1, wherein in the step A, the preparation method of the all-inorganic perovskite precursor dispersion liquid comprises the following steps: CsX and PbX are mixed 2 Mixing to obtain the mixed raw material of the all-inorganic perovskite precursor, CsX and PbX 2 In the formula, X is Cl, Br or I; and then adding the mixed raw material of the all-inorganic perovskite precursor into N, N-dimethylformamide DMF or dimethyl sulfoxide DMSO, and stirring and mixing uniformly to obtain the dispersion liquid of the all-inorganic perovskite precursor.
3. The method of patterning an all-inorganic perovskite microcrystalline composite thin film according to claim 2, wherein CsX and PbX are 2 The amount ratio of the substance(s) is 1-1.5: 1, PbX is contained in the dispersion liquid of the all-inorganic perovskite precursor 2 The amount concentration of the substance(s) is 0.01 to 0.04 mol/L.
4. The method for patterning the all-inorganic perovskite microcrystal composite film according to claim 1, wherein in the step A, the poor solvent A is toluene or chlorobenzene, and the volume ratio of the all-inorganic perovskite precursor dispersion liquid to the poor solvent A is 1: 10-50; the centrifugation speed is 8000rpm, and the centrifugation time is 5-8 min; the chemical formula of the all-inorganic perovskite microcrystal precipitation is CsPbX 3 And X is Cl, Br or I.
5. The method for patterning the all-inorganic perovskite microcrystalline composite thin film according to claim 1, wherein in the step B, the preparation method of the polymer solution comprises the following steps: adding polymethyl methacrylate (PMMA) or Polystyrene (PS) into a poor solvent B for dissolving, and stirring and mixing uniformly to obtain a polymer solution.
6. The patterning method of the all-inorganic perovskite microcrystal composite film according to claim 5, wherein the mass concentration of polymethyl methacrylate (PMMA) or Polystyrene (PS) in the polymer solution is 5-10 mg/mL; the poor solvent B is toluene or chlorobenzene.
7. The method for patterning the all-inorganic perovskite microcrystal composite film according to claim 1, wherein in the step B, the ratio of the mass of the all-inorganic perovskite microcrystal precipitate to the volume of the polymer solution is 5-10 mg/mL.
8. The method for patterning the all-inorganic perovskite microcrystalline composite film according to claim 1, wherein in the step C, the PDMS pattern template is soaked in the poor solvent C for 1-2 min before the PDMS pattern template is covered on the all-inorganic perovskite microcrystalline composite film.
9. The patterning method of the all-inorganic perovskite microcrystal composite film according to claim 8, wherein in the step C, the heating and drying temperature is 80-110 ℃, and the heating and drying time is 10-30 min; the poor solvent C is acetone; the time interval between the step B and the step C is 3-5 min.
10. The method for patterning the all-inorganic perovskite microcrystalline composite thin film according to claim 1, wherein in the step A, the preparation method of the all-inorganic perovskite precursor dispersion liquid comprises the following steps: CsX and PbX 2 Mixing according to the mass ratio of 1.5:1 to obtain the mixed raw material of the all-inorganic perovskite precursor, CsX and PbX 2 In the formula, X is Cl, Br or I; adding the mixed raw material of the all-inorganic perovskite precursor into N, N-dimethylformamide DMF, and stirring and mixing uniformly to obtain an all-inorganic perovskite precursor dispersion liquid, wherein the mass concentration of the mixed raw material of the all-inorganic perovskite precursor in the all-inorganic perovskite precursor dispersion liquid is 0.01 mol/L; the poor solvent A is toluene, and the volume ratio of the all-inorganic perovskite precursor dispersion liquid to the poor solvent A is 1: 20; the centrifugation speed is 8000rpm, and the centrifugation time is 5 min;
in the step B, the preparation method of the polymer solution comprises the following steps: adding polymethyl methacrylate (PMMA) into a poor solvent B chlorobenzene for dissolving, and stirring and mixing uniformly to obtain a polymer solution; the mass concentration of polymethyl methacrylate PMMA in the polymer solution is 8 mg/mL;
in the step C, the ratio of the mass of the all-inorganic perovskite microcrystal precipitate to the volume of the polymer solution is 10 mg/mL; before a PDMS pattern template is covered on the all-inorganic perovskite microcrystal composite film, soaking the PDMS pattern template in a poor solvent C acetone for 1 min; the heating and drying temperature is 100 ℃, and the heating and drying time is 15 min; the time interval between step B and step C was 5 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210782240.6A CN115108733A (en) | 2022-07-04 | 2022-07-04 | Method for patterning all-inorganic perovskite microcrystal composite film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210782240.6A CN115108733A (en) | 2022-07-04 | 2022-07-04 | Method for patterning all-inorganic perovskite microcrystal composite film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115108733A true CN115108733A (en) | 2022-09-27 |
Family
ID=83332966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210782240.6A Pending CN115108733A (en) | 2022-07-04 | 2022-07-04 | Method for patterning all-inorganic perovskite microcrystal composite film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115108733A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195710A (en) * | 2017-05-31 | 2017-09-22 | 苏州大学 | A kind of method that the inorganic perovskite thin film of high-luminous-efficiency is prepared based on one-step method |
| CN109103274A (en) * | 2018-07-28 | 2018-12-28 | 陕西师范大学 | A kind of full-inorganic perovskite solar battery and preparation method |
| CN109659394A (en) * | 2018-12-14 | 2019-04-19 | 北京化工大学 | A kind of preparation method and application of high quality full-inorganic perovskite thin film material |
| CN109860428A (en) * | 2018-12-17 | 2019-06-07 | 西安交通大学 | A kind of preparation method of high stability feux rouges two dimension perovskite thin film |
| CN110854220A (en) * | 2019-11-26 | 2020-02-28 | 华北电力大学 | Application of functional polymer in all-inorganic perovskite light absorption layer, preparation method of functional polymer and all-inorganic perovskite solar cell |
| CN114122266A (en) * | 2021-11-17 | 2022-03-01 | 南京理工大学 | Preparation method of organic-inorganic hybrid perovskite film with patterned surface |
-
2022
- 2022-07-04 CN CN202210782240.6A patent/CN115108733A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195710A (en) * | 2017-05-31 | 2017-09-22 | 苏州大学 | A kind of method that the inorganic perovskite thin film of high-luminous-efficiency is prepared based on one-step method |
| CN109103274A (en) * | 2018-07-28 | 2018-12-28 | 陕西师范大学 | A kind of full-inorganic perovskite solar battery and preparation method |
| CN109659394A (en) * | 2018-12-14 | 2019-04-19 | 北京化工大学 | A kind of preparation method and application of high quality full-inorganic perovskite thin film material |
| CN109860428A (en) * | 2018-12-17 | 2019-06-07 | 西安交通大学 | A kind of preparation method of high stability feux rouges two dimension perovskite thin film |
| CN110854220A (en) * | 2019-11-26 | 2020-02-28 | 华北电力大学 | Application of functional polymer in all-inorganic perovskite light absorption layer, preparation method of functional polymer and all-inorganic perovskite solar cell |
| CN114122266A (en) * | 2021-11-17 | 2022-03-01 | 南京理工大学 | Preparation method of organic-inorganic hybrid perovskite film with patterned surface |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107032392B (en) | A kind of full-inorganic perovskite nanometer sheet and its preparation method and application | |
| CN112029494A (en) | Perovskite nano material, composite luminescent material containing perovskite nano material, and preparation method and application of perovskite nano material | |
| Ibanez et al. | Controlled nanocrystallization of organic molecules in sol‐gel glasses | |
| CN104882543B (en) | Organic-inorganic hybrid perovskite MAPbBr3 material with gradient energy band structure and preparation method thereof | |
| WO2018009530A1 (en) | Methods of making highly stable perovskite-polymer composites and structures using same | |
| CN112080276A (en) | Preparation method of cesium-lead halogen perovskite nanocrystalline thin film with high luminous efficiency | |
| CN105870328B (en) | A kind of preparation method of the perovskite solar cell light absorption layer of stabilization | |
| CN108922972A (en) | Perovskite thin film, perovskite solar battery and preparation method thereof | |
| CN112029493A (en) | Composite luminescent material, preparation method and application thereof | |
| Meng et al. | Photon management of combining nanostructural antireflection and perovskite down-shifting composite films for improving the efficiency of silicon solar cells | |
| CN101752094A (en) | Electrode in a photonic crystal structure mixed with nano metal and making method thereof | |
| CN105487296B (en) | Aligning film material and preparation method thereof, alignment films, display base plate preparation method | |
| CN110776906B (en) | Perovskite thin film with stable photoluminescence efficiency and preparation method thereof | |
| CN110564416A (en) | High-stability perovskite quantum dot composite material and preparation method thereof | |
| KR20190011762A (en) | Light emitting device and electronic equipment including the same | |
| CN110894343B (en) | MoO (MoO)3@ PEDOT composite material and preparation and application thereof | |
| CN111004629A (en) | CsPbBr for improving all-inorganic perovskite quantum dot3Method of stabilization | |
| Ma et al. | Stability study of all-inorganic perovskite CsPbBr3 QDs@ SiO2/EVA film composites prepared by one-step | |
| Yang et al. | Large-scale synthesis of CH3NH3BF4 crystal and its application on CH3NH3PbBrx (BF4)(3-x) perovskite thin films | |
| CN115108733A (en) | Method for patterning all-inorganic perovskite microcrystal composite film | |
| Nasti et al. | Patterning of perovskite–polymer films by wrinkling instabilities | |
| Ragina et al. | Wet chemical synthesis and characterization of tin sulphide thin films from different host solutions | |
| Lin et al. | Remanent solvent management engineering of perovskite films for PEDOT: PSS-based inverted solar cells | |
| CN102683497A (en) | Preparation method of copper indium selenium sulfide thin film for solar cell | |
| Su et al. | Improving photoluminescent water-stability of CsPbBr3 perovskite nanocrystals via constructing nanocrystals/polymer composites with hydrophobic surfaces for LED applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |