CN115108576A - A kind of purification method of copper sulfate pentahydrate crystal and application thereof - Google Patents

A kind of purification method of copper sulfate pentahydrate crystal and application thereof Download PDF

Info

Publication number
CN115108576A
CN115108576A CN202210688630.7A CN202210688630A CN115108576A CN 115108576 A CN115108576 A CN 115108576A CN 202210688630 A CN202210688630 A CN 202210688630A CN 115108576 A CN115108576 A CN 115108576A
Authority
CN
China
Prior art keywords
copper sulfate
crystals
crystal
sulfate pentahydrate
rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202210688630.7A
Other languages
Chinese (zh)
Other versions
CN115108576B (en
Inventor
杨利鸿
宁寻安
沈君华
王逸
何峣
张艳林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Pengrui Environmental Resources Co ltd
Original Assignee
Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong University of Technology filed Critical Guangdong University of Technology
Priority to CN202210688630.7A priority Critical patent/CN115108576B/en
Publication of CN115108576A publication Critical patent/CN115108576A/en
Application granted granted Critical
Publication of CN115108576B publication Critical patent/CN115108576B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00Compounds of copper
    • C01G3/10Sulfates
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/80Compositional purity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

本发明属于化合物纯化技术领域,具体涉及一种五水硫酸铜晶体的纯化方法及其应用。本发明通过在硫酸铜粗品溶液中加入一定尺寸和添加率的晶种培养,并采用四次分级降温策略,控制降温速率将溶液始终保持在介稳状态,逐渐冷却至25~34℃得到五水硫酸铜晶体;所得五水硫酸铜晶体的纯度达到电镀级,且五水硫酸铜晶体的晶体形貌也得到极大改善,晶体平均粒径大,粒径分布较集中,不易结块;同时,该方法工艺简单、制备时间大大缩短,不需要使用强酸强碱溶液,绿色环保,资源消耗小,有利于大规模生产。

Figure 202210688630

The invention belongs to the technical field of compound purification, and in particular relates to a purification method of copper sulfate pentahydrate crystals and application thereof. In the present invention, seed crystals of a certain size and addition rate are added to the crude copper sulfate solution for cultivation, and a four-stage cooling strategy is adopted to control the cooling rate to keep the solution in a metastable state, and gradually cool to 25-34° C. to obtain pentahydrate Copper sulfate crystal; the purity of the obtained copper sulfate pentahydrate crystal reaches the electroplating level, and the crystal morphology of the copper sulfate pentahydrate crystal is also greatly improved, the average crystal particle size is large, the particle size distribution is relatively concentrated, and it is not easy to agglomerate; at the same time, The method has simple process, greatly shortened preparation time, does not need to use strong acid and strong alkali solution, is green and environmentally friendly, has low resource consumption, and is favorable for large-scale production.

Figure 202210688630

Description

一种五水硫酸铜晶体的纯化方法及其应用A kind of purification method of copper sulfate pentahydrate crystal and its application

技术领域technical field

本发明属于化合物纯化技术领域。更具体地,涉及一种五水硫酸铜晶体的纯化方法及其应用。The invention belongs to the technical field of compound purification. More specifically, it relates to a purification method of copper sulfate pentahydrate crystal and its application.

背景技术Background technique

五水硫酸铜俗称蓝矾、胆矾或铜矾,是一种重要的无机化工产品,在电镀领域,对品质好、纯度高的电镀级硫酸铜需求量日益增加,而国内生产的硫酸铜产品纯度大多为工业级产品,产品纯度低质量差,颗粒细小,粒度不均匀,晶体形态不好,不致密,在干燥筛分过程中易破碎。因此,高纯度五水硫酸铜晶体的制备具有非常重要的意义。Copper sulfate pentahydrate, commonly known as blue vitriol, bile vitriol or copper vitriol, is an important inorganic chemical product. In the field of electroplating, the demand for electroplating-grade copper sulfate with good quality and high purity is increasing. Most of the products are industrial grade products with low purity and poor quality, fine particles, uneven particle size, poor crystal shape, not dense, and easy to break in the drying and screening process. Therefore, the preparation of high-purity copper sulfate pentahydrate crystals is of great significance.

工业上常产生一些五水硫酸铜粗品,五水硫酸铜粗品因硫酸铜含量较低而使其应用受到限制,若能对五水硫酸铜粗品进行提纯,则能大大节约资源,提高五水硫酸铜粗品的利用率,如禹耀萍等人研究了粗硫酸铜提纯实验中增大硫酸铜结晶颗粒的方法,具体为首先在硫酸铜溶液中添加氢氧化钠和双氧水除去硫酸亚铁等杂质,加入晶种后加入硫酸溶液酸化,随后进行蒸发并自然冷却使晶体析出。其能有效增大硫酸铜晶体的大小,除去硫酸铜粗品种的硫酸亚铁等杂质,但其在提纯过程中需要添加强酸强碱溶液硫酸,不符合绿色化学理念,且自然冷却在结晶过程的初始阶段溶液的过饱和度急剧升高,达到某一峰值,然后又急剧下降,使结晶过程的过饱和度在随后相当长的一段时间内维持在一个很低的水平,导致发生初级成核现象以及生产能力低下的问题(禹耀萍.粗硫酸铜提纯实验中增大硫酸铜结晶颗粒的方法[J].怀化学院学报,2003.)。因此,迫切需要提供一种绿色环保、初级成核生产能力好的从五水硫酸铜粗品中提纯五水硫酸铜晶体的方法。In industry, some crude copper sulfate pentahydrate is often produced, and the application of crude copper sulfate pentahydrate is limited due to its low content of copper sulfate. The utilization rate of copper crude products, such as Yu Yaoping et al. studied the method of increasing copper sulfate crystal particles in the crude copper sulfate purification experiment, specifically adding sodium hydroxide and hydrogen peroxide to the copper sulfate solution to remove impurities such as ferrous sulfate, After adding seed crystals, sulfuric acid solution was added for acidification, followed by evaporation and natural cooling to precipitate crystals. It can effectively increase the size of copper sulfate crystals and remove impurities such as ferrous sulfate in crude copper sulfate, but it needs to add strong acid and strong alkali solution sulfuric acid in the purification process, which does not conform to the concept of green chemistry, and natural cooling is in the crystallization process. In the initial stage, the supersaturation of the solution increases sharply, reaches a certain peak, and then decreases sharply, so that the supersaturation of the crystallization process is maintained at a very low level for a long period of time, resulting in the occurrence of primary nucleation. And the problem of low production capacity (Yu Yaoping. The method of increasing the crystal particles of copper sulfate in the purification experiment of crude copper sulfate [J]. Journal of Huaihua University, 2003.). Therefore, there is an urgent need to provide a method for purifying copper sulfate pentahydrate crystals from copper sulfate pentahydrate crude product, which is environmentally friendly and has good primary nucleation production capacity.

发明内容SUMMARY OF THE INVENTION

本发明要解决的技术问题是克服现有从五水硫酸铜粗品中提纯五水硫酸铜晶体的方法不符合绿色化学理念、对初级成核现象控制不佳、生产能力低下的缺陷和不足,提供一种绿色环保、产率高、硫酸铜纯度高、晶体粒径分布范围窄、晶体形貌规则、能大大缩短提纯时间的五水硫酸铜晶体的纯化方法。The technical problem to be solved by the present invention is to overcome the defects and deficiencies that the existing method for purifying copper sulfate pentahydrate crystals from crude copper sulfate pentahydrate does not conform to the concept of green chemistry, the primary nucleation phenomenon is poorly controlled, and the production capacity is low. The invention discloses a method for purifying copper sulfate pentahydrate crystals, which is green and environmentally friendly, has high yield, high purity of copper sulfate, narrow crystal particle size distribution range, regular crystal morphology, and can greatly shorten the purification time.

本发明的目的是提供一种五水硫酸铜晶体的纯化方法在提纯五水硫酸铜晶体中的应用。The purpose of this invention is to provide the application of a kind of purification method of copper sulfate pentahydrate crystal in purifying copper sulfate pentahydrate crystal.

本发明的上述目通过以下技术方案实现:Above-mentioned purpose of the present invention is achieved through the following technical solutions:

本发明保护一种五水硫酸铜晶体的纯化方法,包括如下步骤:The present invention protects a method for purifying copper sulfate pentahydrate crystals, comprising the following steps:

将硫酸铜粗品与水混合后加热至85~100℃溶解,趁热过滤,第一次降温以0.05℃/min~0.25℃/min的速率降温至56~63℃,添加晶种培养0.5~1h,再第二次降温0.2℃/min~0.3℃/min的速率降温至50~55℃,第三次降温以0.3℃/min~0.4℃/min的速率降温至35~45℃,第四次降温以0.4℃/min~0.5℃/min的速率降温至25~34℃,静置,后处理即得;Mix the crude copper sulfate with water and heat to 85-100°C to dissolve, filter while hot, cool down to 56-63°C at a rate of 0.05°C/min-0.25°C/min for the first time, add seed crystals for 0.5-1h , and then the second cooling at a rate of 0.2 °C/min ~ 0.3 °C/min to 50 ~ 55 °C, the third cooling at a rate of 0.3 °C/min ~ 0.4 °C/min to 35 ~ 45 °C, the fourth cooling Cool down to 25-34°C at a rate of 0.4°C/min~0.5°C/min, let stand, and post-processing;

所述晶种的粒径为50~85目时,晶种添加率为8%~12%;晶种的粒径为90~100目时,晶种添加率6%~12%。When the particle size of the seed crystal is 50-85 mesh, the seed crystal addition rate is 8%-12%; when the particle size of the seed crystal is 90-100 mesh, the seed crystal addition rate is 6%-12%.

本发明创造性的采用四次分级降温策略,通过控制降温速率将溶液始终保持在介稳状态,相比于不受控制的自然冷却降温以及恒速降温,本发明采用的方法使五水硫酸铜晶体的生长速率完全由冷却速率控制,有效避免因溶液进入不稳区而发生的初级成核现象。若采用自然冷却操作,在结晶过程的初始阶段溶液的过饱和度急剧升高,达到某一峰值,然后又急剧下降,使结晶过程的过饱和度在随后相当长的一段时间内维持在一个很低的水平,导致发生初级成核生产能力低下的问题。至于恒速降温操作,类似于自然冷却操作的缺点仍然存在。The invention creatively adopts a four-stage grading cooling strategy, and keeps the solution in a metastable state by controlling the cooling rate. The growth rate is completely controlled by the cooling rate, which effectively avoids the primary nucleation phenomenon that occurs when the solution enters the unstable zone. If the natural cooling operation is adopted, the supersaturation of the solution increases sharply at the initial stage of the crystallization process, reaches a certain peak, and then decreases sharply, so that the supersaturation of the crystallization process remains at a very high level for a long period of time. Low levels, leading to problems with low primary nucleation productivity. As for the constant rate cooling operation, the disadvantages similar to the free cooling operation still exist.

晶种配方设计是结晶成功的关键。晶种添加率越多成本越高,除此之外,也会抑制单晶的生长速度,降低产品的平均尺寸;晶种添加率越少,产量会相应降低,同时会导致成核速率大于生长速率,造成初级成核现象发生,使产品粒度不规则。The seed crystal formulation design is the key to the success of crystallization. The higher the seed crystal addition rate, the higher the cost. In addition, the growth rate of the single crystal will be inhibited and the average size of the product will be reduced. rate, resulting in the occurrence of primary nucleation and irregular product particle size.

晶种粒径分布越窄则所得产品粒径分布越窄,产品粒径尺寸分布越均匀;晶种的尺寸较小(小于100目)可以提高产品的产量,但生成的晶体粒径较小,尺寸较大(大于50目)有利于生成粒径较大的晶体,但产品的产量较低。只有在本发明的粒径范围内,才能达到晶体粒径大的同时产量也高。The narrower the particle size distribution of the crystal seed, the narrower the particle size distribution of the obtained product, and the more uniform the particle size distribution of the product; the smaller the size of the seed crystal (less than 100 mesh) can improve the output of the product, but the resulting crystal particle size is smaller, Larger size (greater than 50 mesh) is conducive to the formation of crystals with larger particle size, but the product yield is lower. Only within the particle size range of the present invention, a large crystal particle size and a high yield can be achieved.

优选地,所述硫酸铜粗品与水混合后的浓度为750g/L~890g/L。Preferably, the concentration of the copper sulfate crude product mixed with water is 750g/L~890g/L.

优选地,所述硫酸铜粗品为工业硫酸铜粗品。Preferably, the copper sulfate crude product is industrial copper sulfate crude product.

优选地,所述第一次降温时还需要搅拌,搅拌速率为80~150r/min。Preferably, stirring is also required during the first cooling, and the stirring rate is 80-150 r/min.

优选地,所述第二次降温时还需要搅拌,搅拌速率为300~400r/min。Preferably, stirring is also required during the second cooling, and the stirring rate is 300-400 r/min.

优选地,所述第三次降温时还需要搅拌,搅拌速率为300~400r/min。Preferably, stirring is also required during the third cooling, and the stirring rate is 300-400 r/min.

优选地,所述第四次降温时还需要搅拌,搅拌速率为300~400r/min。Preferably, stirring is also required during the fourth cooling, and the stirring rate is 300-400 r/min.

优选地,所述第三次降温降温至36~40℃。Preferably, the temperature is lowered to 36-40° C. for the third time.

优选地,所述第四次降温降温至28~32℃。Preferably, the temperature is lowered to 28-32° C. for the fourth time.

优选地,所述晶种经过分样筛过筛。Preferably, the seed crystals are sieved through a sample sieve.

优选地,所述晶种经过分样筛后需用适量水洗涤。Preferably, the seed crystal needs to be washed with an appropriate amount of water after passing through the sample sieve.

用适量水洗涤可以溶解粘附在晶种上的细小颗粒,使晶种表面更加光滑,粒径分布更加均匀。Washing with an appropriate amount of water can dissolve the fine particles adhering to the seed crystal, making the surface of the seed crystal smoother and the particle size distribution more uniform.

优选地,所述水包括去离子水。Preferably, the water comprises deionized water.

优选地,所述静置的时间为0.5~1.5h。Preferably, the standing time is 0.5-1.5 h.

本发明进一步保护所述五水硫酸铜晶体的纯化方法在制备五水硫酸铜晶体中的应用。The present invention further protects the application of the method for purifying copper sulfate pentahydrate crystals in the preparation of copper sulfate pentahydrate crystals.

本发明具有以下有益效果:The present invention has the following beneficial effects:

本发明通过在硫酸铜粗品溶液中加入一定尺寸和添加率的晶种培养,并采用四次分级降温策略,控制降温速率将溶液始终保持在介稳状态,逐渐冷却至25~34℃得到五水硫酸铜晶体;所得五水硫酸铜晶体的纯度达到电镀级,且五水硫酸铜晶体的晶体形貌也得到极大改善,晶体平均粒径大,粒径分布较集中,不易结块;同时,该方法工艺简单、制备时间大大缩短,不需要使用强酸强碱溶液,绿色环保,资源消耗小,有利于大规模生产。In the present invention, seed crystals with a certain size and addition rate are added to the crude copper sulfate solution for cultivation, and a four-stage cooling strategy is adopted to control the cooling rate to keep the solution in a metastable state, and gradually cool to 25-34° C. to obtain pentahydrate Copper sulfate crystal; the purity of the obtained copper sulfate pentahydrate crystal reaches the electroplating level, and the crystal morphology of the copper sulfate pentahydrate crystal is also greatly improved, the average crystal particle size is large, the particle size distribution is relatively concentrated, and it is not easy to agglomerate; at the same time, The method has the advantages of simple process, greatly shortened preparation time, no need to use strong acid and strong alkali solution, green environmental protection, low resource consumption, and is favorable for large-scale production.

附图说明Description of drawings

图1为实施例1~3所得五水硫酸铜晶体通过光学显微镜放大40倍获得的晶体形貌图,从左到右依次为实施例1、实施例2、实施例3。FIG. 1 is a crystal morphology diagram obtained by magnifying 40 times of the copper sulfate pentahydrate crystals obtained in Examples 1 to 3 by an optical microscope. From left to right, they are Example 1, Example 2, and Example 3.

图2为实施例1~3所得五水硫酸铜晶体通过激光粒度粒形分析仪获得的粒度分布图,从左到右依次为实施例1、实施例2、实施例3。2 is a particle size distribution diagram of the copper sulfate pentahydrate crystals obtained in Examples 1 to 3 obtained by a laser particle size analyzer. From left to right, they are Example 1, Example 2, and Example 3.

图3为本发明对比例1~2所得五水硫酸铜晶体通过光学显微镜放大40倍获得的晶体形貌图,从左到右依次为对比例1、对比例2。3 is a crystal morphology diagram obtained by magnifying 40 times of the copper sulfate pentahydrate crystals obtained in Comparative Examples 1 to 2 of the present invention by an optical microscope, from left to right are Comparative Example 1 and Comparative Example 2.

图4为本发明对比例1~2所得五水硫酸铜晶体通过激光粒度粒形分析仪获得的粒度分布图,从左到右依次为对比例1、对比例2。4 is a particle size distribution diagram of the copper sulfate pentahydrate crystals obtained in Comparative Examples 1 to 2 of the present invention obtained by a laser particle size analyzer, from left to right are Comparative Example 1 and Comparative Example 2.

图5为本发明对比例3~5所得五水硫酸铜晶体通过光学显微镜放大40倍获得的晶体形貌图,从左到右依次为对比例3、对比例4、对比例5。5 is a crystal morphology diagram of the copper sulfate pentahydrate crystals obtained by the comparative examples 3 to 5 of the present invention, which are obtained by magnifying 40 times by an optical microscope.

图6为本发明对比例3~5所得五水硫酸铜晶体通过激光粒度粒形分析仪获得的粒度分布图,从左到右依次为对比例3、对比例4、对比例5。6 is a particle size distribution diagram of the copper sulfate pentahydrate crystals obtained in Comparative Examples 3 to 5 of the present invention obtained by a laser particle size particle shape analyzer, from left to right are Comparative Example 3, Comparative Example 4, and Comparative Example 5.

图7为本发明在对比例6所得五水硫酸铜晶体通过光学显微镜放大40倍获得的晶体形貌图和通过激光粒度粒形分析仪获得的粒度分布图,从左到右依次为晶体形貌图、粒度分布图。Fig. 7 is the crystal morphology of the copper sulfate pentahydrate crystal obtained in Comparative Example 6 obtained by magnifying 40 times by an optical microscope and the particle size distribution diagram obtained by a laser particle size analyzer. From left to right are the crystal morphology. Graph, particle size distribution graph.

具体实施方式Detailed ways

以下结合说明书附图和具体实施例来进一步说明本发明,但实施例并不对本发明做任何形式的限定。除非特别说明,本发明采用的试剂、方法和设备为本技术领域常规试剂、方法和设备。The present invention is further described below with reference to the accompanying drawings and specific embodiments, but the embodiments do not limit the present invention in any form. Unless otherwise specified, the reagents, methods and equipment used in the present invention are conventional reagents, methods and equipment in the technical field.

除非特别说明,以下实施例所用试剂和材料均为市购。Unless otherwise specified, the reagents and materials used in the following examples are commercially available.

本发明所用工业硫酸铜粗品的主要成分及含量如表1所示:Main component and content of industrial copper sulfate crude product used in the present invention are as shown in table 1:

表1工业硫酸铜粗品的主要成分及含量Table 1 Main components and content of industrial copper sulfate crude product

项目project 工业硫酸铜Industrial copper sulfate 硫酸铜(CuSO<sub>4</sub>·5H<sub>2</sub>O)含量w/%Copper sulfate (CuSO<sub>4</sub>·5H<sub>2</sub>O) content w/% 95.6395.63 砷(As)含量w/%Arsenic (As) content w/% 0.000110.00011 铅(Pb)含量w/%Lead (Pb) content w/% 0.000020.00002 钙(Ca)含量w/%Calcium (Ca) content w/% 0.007000.00700 铁(Fe)含量w/%Iron (Fe) content w/% 0.013640.01364 钴(Co)含量w/%Cobalt (Co) content w/% 0.000020.00002 镍(Ni)含量w/%Nickel (Ni) content w/% 0.000020.00002 锌(Zn)含量w/%Zinc (Zn) content w/% 0.000060.00006 镉(Cd)含量w/%Cadmium (Cd) content w/% 0.000000.00000 锰(Mn)含量w/%Manganese (Mn) content w/% 0.000100.00010 铝(Al)含量w/%Aluminum (Al) content w/% 0.003190.00319 铬(Cr)含量w/%Chromium (Cr) content w/% 0.000660.00066 氯化物(以Cl计)含量w/%Chloride (as Cl) content w/% 0.012500.01250 水不溶物含量w/%Water insoluble content w/% 0.016300.01630 pH(50g/L溶液)pH(50g/L solution) 3.603.60

实施例1五水硫酸铜晶体的制备The preparation of embodiment 1 copper sulfate pentahydrate crystal

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过65目筛网并用水洗涤的晶种,晶种添加率为10%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, suction filtration while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, add 65 The seed crystals were sieved and washed with water, the seed crystal addition rate was 10%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 °C for 0.5 h. The obtained seed crystals were evenly and regularly suspended in the entire solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

实施例2五水硫酸铜晶体的制备The preparation of embodiment 2 copper sulfate pentahydrate crystal

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过100目筛网并用水洗涤的晶种,晶种添加率为6%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, suction filtration while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, and add 100 The seed crystals were sieved and washed with water, the seed crystal addition rate was 6%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 °C for 0.5 h. The obtained seeds were uniformly and regularly suspended in the whole solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种过100目筛网,晶种添加率为6%。The difference from Example 1 is that the seed crystals pass through a 100-mesh screen, and the seed crystal addition rate is 6%.

实施例3五水硫酸铜晶体的制备The preparation of embodiment 3 copper sulfate pentahydrate crystal

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过100目筛网并用水洗涤的晶种,晶种添加率为10%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, suction filtration while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, and add 100 The seed crystals were sieved and washed with water, the seed crystal addition rate was 10%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 °C for 0.5 h. The obtained seed crystals were evenly and regularly suspended in the entire solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种过100目筛网。The difference from Example 1 is that the seed crystals pass through a 100-mesh screen.

对比例1五水硫酸铜晶体的制备Comparative Example 1 Preparation of copper sulfate pentahydrate crystals

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过65目筛网并用水洗涤的晶种,晶种添加率为2%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, suction filtration while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, add 65 The seed crystals were sieved and washed with water, the seed crystal addition rate was 2%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 ° C for 0.5 h. The obtained seed crystals were uniformly and regularly suspended in the entire solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种添加率为2%。The difference from Example 1 is that the seed crystal addition rate is 2%.

对比例2五水硫酸铜晶体的制备Comparative Example 2 Preparation of copper sulfate pentahydrate crystals

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过65目筛网并用水洗涤的晶种,晶种添加率为6%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, suction filtration while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, add 65 The seed crystals were sieved and washed with water, the seed crystal addition rate was 6%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 °C for 0.5 h. The obtained seeds were uniformly and regularly suspended in the whole solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种添加率为6%。The difference from Example 1 is that the seed crystal addition rate is 6%.

对比例3五水硫酸铜晶体的制备Comparative Example 3 Preparation of copper sulfate pentahydrate crystals

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过100目筛网并用水洗涤的晶种,晶种添加率为2%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, suction filtration while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, and add 100 The seed crystals were sieved and washed with water, the seed crystal addition rate was 2%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 ° C for 0.5 h. The obtained seed crystals were uniformly and regularly suspended in the entire solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种过100目筛网,晶种添加率为2%。The difference from Example 1 is that the seed crystals pass through a 100-mesh screen, and the seed crystal addition rate is 2%.

对比例4五水硫酸铜晶体的制备Comparative Example 4 Preparation of copper sulfate pentahydrate crystals

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过120目筛网并用水洗涤的晶种,晶种添加率为2%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, filter while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, add 120 The seed crystals were sieved and washed with water, the seed crystal addition rate was 2%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 ° C for 0.5 h. The obtained seed crystals were uniformly and regularly suspended in the entire solution, followed by Cool down to 50°C with a cooling rate of 0.2°C/min and stirring rate of 350r/min, cool down to 38°C with a cooling rate of 0.3°C/min and stirring rate of 350r/min, and cool down to 38°C with a cooling rate of 0.4°C/min to 350r/min The stirring rate was cooled to 30 °C, left standing for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种过120目筛网,晶种添加率为2%。The difference from Example 1 is that the seed crystals pass through a 120-mesh screen, and the seed crystal addition rate is 2%.

对比例5五水硫酸铜晶体的制备Comparative Example 5 Preparation of copper sulfate pentahydrate crystals

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过120目筛网并用水洗涤的晶种,晶种添加率为6%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, filter while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, add 120 The seed crystals were sieved and washed with water, the seed crystal addition rate was 6%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 °C for 0.5 h. The obtained seeds were uniformly and regularly suspended in the whole solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种过120目筛网,晶种添加率为6%。The difference from Example 1 is that the seed crystals pass through a 120-mesh screen, and the seed crystal addition rate is 6%.

对比例6五水硫酸铜晶体的制备The preparation of comparative example 6 copper sulfate pentahydrate crystal

取84.48g工业硫酸铜粗品与100ml去离子水混合并加热至85℃,趁热抽滤得到澄清溶液,以0.2℃/min的降温速率、120r/min的搅拌速率降温至58.5℃,添加过120目筛网并用水洗涤的晶种,晶种添加率为2%,搅拌速率维持在120r/min,58.5℃恒温养晶0.5h,得到的晶种均匀且规则的悬浮于整个溶液中,依次以0.2℃/min的降温速率、350r/min的搅拌速率降温至50℃,以0.3℃/min的降温速率、350r/min的搅拌速率降温至38℃,以0.4℃/min的降温速率、350r/min的搅拌速率降温至30℃,静置1h,真空抽滤、去离子水洗涤,将洗涤后的晶体真空烘干3h,得到五水硫酸铜晶体。Take 84.48g of industrial copper sulfate crude product and mix it with 100ml of deionized water and heat it to 85°C, filter while hot to obtain a clear solution, cool down to 58.5°C with a cooling rate of 0.2°C/min and a stirring rate of 120r/min, add 120 The seed crystals were sieved and washed with water, the seed crystal addition rate was 2%, the stirring rate was maintained at 120 r/min, and the crystals were grown at a constant temperature of 58.5 ° C for 0.5 h. The obtained seed crystals were uniformly and regularly suspended in the entire solution, followed by The cooling rate of 0.2°C/min and the stirring rate of 350r/min were cooled to 50°C, the cooling rate of 0.3°C/min and the stirring rate of 350r/min were cooled to 38°C, and the cooling rate of 0.4°C/min, 350r/min The stirring rate of min was cooled to 30 °C, left for 1 h, vacuum filtered, washed with deionized water, and the washed crystals were vacuum dried for 3 h to obtain copper sulfate pentahydrate crystals.

与实施例1的区别在于晶种过120目筛网。The difference from Example 1 is that the seed crystals pass through a 120-mesh screen.

实验例1五水硫酸铜晶体的主要成分含量测定Experimental Example 1 Determination of the main component content of copper sulfate pentahydrate crystals

将实施例1~3、对比例1~6所得的五水硫酸铜晶体进行主要成分含量测定,采用的方法来源于HG/T 3592-2020《电镀用硫酸铜》(电镀用硫酸铜的标准如表4所示),五水硫酸铜晶体的主要成分及含量结果如表2~3所示。The copper sulfate pentahydrate crystals obtained in Examples 1 to 3 and Comparative Examples 1 to 6 are subjected to main component content determination, and the method used is derived from HG/T 3592-2020 "Copper Sulfate for Electroplating" (the standard of copper sulfate for electroplating is as follows. Table 4), the main components and content results of copper sulfate pentahydrate crystals are shown in Tables 2-3.

表2实施例1~3所得五水硫酸铜晶体的主要成分及含量The main components and content of copper sulfate pentahydrate crystals obtained in Table 2 Examples 1-3

Figure BDA0003700698750000081
Figure BDA0003700698750000081

表3对比例1~6所得五水硫酸铜晶体的主要成分及含量The main components and content of copper sulfate pentahydrate crystals obtained in Table 3 Comparative Examples 1 to 6

Figure BDA0003700698750000082
Figure BDA0003700698750000082

Figure BDA0003700698750000091
Figure BDA0003700698750000091

表4 HG/T 3592-2020《电镀用硫酸铜》Table 4 HG/T 3592-2020 "Copper Sulfate for Electroplating"

Figure BDA0003700698750000092
Figure BDA0003700698750000092

Figure BDA0003700698750000101
Figure BDA0003700698750000101

由表2可以看出,且实施例1~3中五水硫酸铜的含量均比原料有所提升,对照表4可见,其中实施例1达到电镀级合格品,接近电镀级一等品;实施例2、3达到电镀级一等品,实施例3接近电镀级优等品;在杂质含量方面,Fe含量整体从0.0136%降至0.0020%~0.0030%之间,达到电镀级一等品要求;Ca含量整体从0.0070%降至0.0002%~0.0017%之间,品质介于电镀级一等品与优等品中;氯化物含量从0.0125%降至0.0009%~0.0035%之间,品质介于电镀级一等品与优等品中,另外,以上实施例的五水硫酸铜在品质优化至电镀级硫酸铜的基础上,产率也非常符合生产效益,分别为92.6%、90.51%、93.2%。As can be seen from Table 2, and the content of copper sulfate pentahydrate in Examples 1 to 3 is higher than that of the raw materials, it can be seen from Table 4 that Example 1 reaches the electroplating grade qualified product, which is close to the electroplating grade first-class product; Examples 2 and 3 reached the first-class electroplating grade, and Example 3 was close to the first-class electroplating grade; in terms of impurity content, the Fe content decreased from 0.0136% to 0.0020% to 0.0030% as a whole, meeting the requirements of the first-class electroplating grade; Ca The overall content has dropped from 0.0070% to 0.0002% to 0.0017%, and the quality is between the first-class and first-class electroplating grades; the chloride content has dropped from 0.0125% to 0.0009% to 0.0035%, and the quality is between the electroplating grades. Among the equal and superior products, in addition, the copper sulfate pentahydrate of the above embodiment is optimized to the electroplating grade copper sulfate, and the yield is also very consistent with the production efficiency, which are 92.6%, 90.51%, and 93.2%, respectively.

由表3可以看出,对比例1~3虽然纯度接近电镀级硫酸铜,但产量低下不适合实际生产,可见,仅改变晶种过筛网的目数与晶种添加率的组合,就使所制备得到的五水硫酸铜晶体为不合格产品。It can be seen from Table 3 that although the purity of Comparative Examples 1 to 3 is close to that of electroplating grade copper sulfate, the low yield is not suitable for actual production. It can be seen that only changing the combination of the mesh number of the crystal seed sieve and the seed crystal addition rate makes the The prepared copper sulfate pentahydrate crystals were unqualified products.

实验例2五水硫酸铜晶体的形貌与粒度分析Experimental Example 2 Morphology and particle size analysis of copper sulfate pentahydrate crystals

将实施例1~3、对比例1~6所得的五水硫酸铜晶体进行粒度分布分析,通过光学显微镜进行晶体微观形貌分析。The copper sulfate pentahydrate crystals obtained in Examples 1 to 3 and Comparative Examples 1 to 6 were subjected to particle size distribution analysis, and crystal micromorphology was analyzed by an optical microscope.

由图1~图7所示:实施例1~3所得的五水硫酸铜晶体粒度分布较窄,其中实施例3呈单峰分布,粒径主要分布在1000~1200um之间,实施例1分布范围广但粒径主要分布在1000~2000um之间,实施例2接近单峰分布,粒径主要分布在900~1200um,表明在此晶种配方中的晶种过筛网的目数与晶种添加率的组合在结晶过程中,发生初级成核现象的几率较小,使得冷却结晶过程中析出的晶体能够规则附着在晶种上规律生长,平均粒径较大,并且从晶体形貌图可以看出实施例1~3的晶型十分规则,不易粘附母液夹带杂质,从而提高产品纯度。As shown in Figures 1 to 7: the particle size distribution of copper sulfate pentahydrate crystals obtained in Examples 1 to 3 is relatively narrow, wherein Example 3 is a unimodal distribution, and the particle size is mainly distributed between 1000 and 1200um, and Example 1 is distributed The range is wide, but the particle size is mainly distributed between 1000 and 2000um. Example 2 is close to a unimodal distribution, and the particle size is mainly distributed in 900 to 1200um, indicating that the seed crystals in this seed crystal formula are screened. In the crystallization process, the probability of primary nucleation is small, so that the crystals precipitated during the cooling crystallization process can be regularly attached to the seed crystal and grow regularly, with a large average particle size, and can be seen from the crystal topography. It can be seen that the crystal forms of Examples 1 to 3 are very regular, and it is not easy to adhere to the mother liquor and entrain impurities, thereby improving the product purity.

对比例1~6所得的五水硫酸铜晶体粒度分布与粒径大小、晶体形貌等不能同时兼顾,例如对比例5、6的粒径分布范围窄,呈单峰分布,但粒径主要分布在250~300um之间,且从晶体形貌图可看出晶型杂乱无章,初级成核现象严重,另外细小晶体难以洗涤过滤,容易夹杂母液影响纯度。The particle size distribution of copper sulfate pentahydrate crystals obtained in Comparative Examples 1 to 6 cannot be taken into account at the same time as the particle size and crystal morphology. For example, the particle size distribution of Comparative Examples 5 and 6 is narrow, showing a unimodal distribution, but the particle size distribution is mainly Between 250 and 300um, and from the crystal morphology, it can be seen that the crystal form is disordered, the primary nucleation phenomenon is serious, and the fine crystals are difficult to wash and filter, and it is easy to be mixed with the mother liquor to affect the purity.

上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。The above-mentioned embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above-mentioned embodiments, and any other changes, modifications, substitutions, combinations, The simplification should be equivalent replacement manners, which are all included in the protection scope of the present invention.

Claims (10)

1. A method for purifying copper sulfate pentahydrate crystals is characterized by comprising the following steps:
mixing a copper sulfate crude product with water, heating to 85-100 ℃ for dissolving, filtering while the mixture is hot, cooling to 56-63 ℃ at the rate of 0.05-0.25 ℃/min for the first time, adding seed crystals, and culturing for 0.5-1 h; cooling to 50-55 ℃ at the speed of 0.2-0.3 ℃/min for the second time, cooling to 35-45 ℃ at the speed of 0.3-0.4 ℃/min for the third time, cooling to 25-34 ℃ at the speed of 0.4-0.5 ℃/min for the fourth time, standing, and performing post-treatment to obtain the final product;
when the grain size of the seed crystal is 50-85 meshes, the seed crystal addition rate is 8% -12%; when the grain size of the seed crystal is 90-100 meshes, the seed crystal addition rate is 6% -12%.
2. The purification method of claim 1, wherein the concentration of the crude copper sulfate mixed with water is 750g/L to 890 g/L.
3. The purification method according to claim 1, wherein stirring is required during the first temperature reduction, and the stirring speed is 80-150 r/min.
4. The purification method according to claim 1, wherein stirring is further required during the second temperature reduction, and the stirring speed is 300-400 r/min.
5. The purification method according to claim 1, wherein stirring is further required during the third temperature reduction, and the stirring speed is 300-400 r/min.
6. The purification method according to claim 1, wherein stirring is further required during the fourth temperature reduction, and the stirring speed is 300-400 r/min.
7. The purification method according to claim 1, wherein the third temperature reduction is carried out to 36-40 ℃.
8. The purification method according to claim 1, wherein the fourth temperature reduction is carried out to 28-32 ℃.
9. The purification method according to claim 1, wherein the standing time is 0.5 to 1.5 hours.
10. Use of the method for purifying copper sulfate pentahydrate crystals as claimed in any one of claims 1 to 9 for the preparation of copper sulfate pentahydrate crystals.
CN202210688630.7A 2022-06-17 2022-06-17 Purification method and application of copper sulfate pentahydrate crystal Active CN115108576B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210688630.7A CN115108576B (en) 2022-06-17 2022-06-17 Purification method and application of copper sulfate pentahydrate crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210688630.7A CN115108576B (en) 2022-06-17 2022-06-17 Purification method and application of copper sulfate pentahydrate crystal

Publications (2)

Publication Number Publication Date
CN115108576A true CN115108576A (en) 2022-09-27
CN115108576B CN115108576B (en) 2023-10-31

Family

ID=83329485

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210688630.7A Active CN115108576B (en) 2022-06-17 2022-06-17 Purification method and application of copper sulfate pentahydrate crystal

Country Status (1)

Country Link
CN (1) CN115108576B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116514156A (en) * 2023-04-12 2023-08-01 湖北三峡实验室 Electronic grade ceric ammonium nitrate crystallization purification method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112591784A (en) * 2020-11-25 2021-04-02 河南省大潮炭能科技有限公司 Safe and energy-saving chemical agent production process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112591784A (en) * 2020-11-25 2021-04-02 河南省大潮炭能科技有限公司 Safe and energy-saving chemical agent production process

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
姜海洋: "五水硫酸铜冷却结晶过程研究", 《中国优秀硕士学位论文全文数据库-工程科技Ⅰ辑》, no. 4, pages 015 - 89 *
段兰娟 等: "旋流流化床中五水硫酸铜结晶生长动力学研究", 《无机盐工业》, vol. 50, no. 8, pages 38 - 40 *
胡德焯;王伍;查正炯;王皓;覃杰荣;: "硫酸铜重结晶探究", 广东化工, no. 08, pages 91 - 93 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116514156A (en) * 2023-04-12 2023-08-01 湖北三峡实验室 Electronic grade ceric ammonium nitrate crystallization purification method

Also Published As

Publication number Publication date
CN115108576B (en) 2023-10-31

Similar Documents

Publication Publication Date Title
CN110817975B (en) Method for reducing sulfur content of ternary precursor
US12180089B2 (en) Wet synthesis method for NCMA high-nickel quaternary precursor
CN107640792A (en) A kind of high compact small particle nickel cobalt manganese hydroxide and preparation method thereof
ES2947957B2 (en) METHOD OF SYNTHESIS OF COBALT HYDROXIDE AND COBALT HYDROXIDE
CN106745335A (en) A kind of preparation method from growth crystal seed regulation and control nickle cobalt lithium manganate growth
CN115108576B (en) Purification method and application of copper sulfate pentahydrate crystal
US20240025760A1 (en) Preparation method of ternary precursor
CN111943240A (en) Method for preparing coarse-grained aluminum hydroxide by decomposing sodium aluminate solution with ultralow seed crystal amount
US20250178922A1 (en) Method for continuously preparing mixed hydroxide precipitate from laterite nickel ore by hydrometallurgy
CN104030331A (en) Method for producing aluminum oxide by utilizing high-alumina fly ash
CN115072804B (en) Method for regulating XRD diffraction intensity ratio of precursor (101) and (001) crystal faces
CN111439778A (en) Preparation method of nano-grade gallium oxide
CN116199270B (en) Treatment process for reducing wastewater in cobalt oxide production process
CN117658799A (en) Efficient crystallization process of cobalt acetate
CN111453748B (en) Lithium precipitation crystallization method for preparing snowflake monocrystal high-purity lithium carbonate
CN114988478A (en) Method for preparing battery-grade manganese sulfate by synergistic elution crystallization of chelating agent
CN107201542A (en) A kind of preparation method of alkali magnesium sulfate crystal whisker
CN115745017A (en) Method for preparing narrow-distribution small-particle-size high-nickel ternary precursor by using continuous reactor system and method for preparing narrow-distribution small-particle-size high-nickel ternary precursor
CN112279280A (en) Preparation method of ultra-pure high-activity battery-grade lithium fluoride
CN115259333B (en) A crystal-inducing carrier for removing and recovering heavy metal ions in wastewater and its preparation method
CN116873985B (en) A method for preparing a nickel-based ternary cathode material precursor with a large (010) crystal face area
CN119612624A (en) Ternary precursor with high tap density, large specific surface and small particles and continuous process preparation method thereof
CN119390090A (en) A preparation method of ammonium sulfate spherical crystals and ammonium sulfate
CN116692795A (en) Potassium removal method for fertilizer grade monoammonium phosphate and application of product thereof
CN115872451A (en) Preparation method of sulfur-free spherical manganese carbonate powder

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20250520

Address after: 512600 Guangdong Province Shaoguan City Wengyuan County Guanyu Town Guanguang Industrial Zone Dapingzi

Patentee after: Guangdong Pengrui Environmental Resources Co.,Ltd.

Country or region after: China

Address before: 510090 Dongfeng East Road, Guangzhou, Guangdong, No. 729

Patentee before: GUANGDONG University OF TECHNOLOGY

Country or region before: China