CN115101394A - NEA AlGaAs photocathode with open nanotube structure and preparation method thereof - Google Patents
NEA AlGaAs photocathode with open nanotube structure and preparation method thereof Download PDFInfo
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- CN115101394A CN115101394A CN202210448961.3A CN202210448961A CN115101394A CN 115101394 A CN115101394 A CN 115101394A CN 202210448961 A CN202210448961 A CN 202210448961A CN 115101394 A CN115101394 A CN 115101394A
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- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 title claims abstract description 70
- 239000002071 nanotube Substances 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000002070 nanowire Substances 0.000 claims description 13
- 238000001994 activation Methods 0.000 claims description 11
- 241000769223 Thenea Species 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 230000004913 activation Effects 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000011258 core-shell material Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 238000003631 wet chemical etching Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000005286 illumination Methods 0.000 abstract 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 InGaP Chemical compound 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Abstract
The invention discloses a NEA AlGaAs photocathode with an open nanotube structure and a preparation method thereof. The photocathode structure with the open nanotube structure comprises: a substrate (11) and SiO which are arranged from bottom to top in sequence 2 A layer (12), a GaAs layer (13), an open AlGaAs nanotube layer (14), and an active layer (15). The AlGaAs with the nanotube structure is used as the electron emission layer of the photocathode, so that the surface area of photoemission can be increased, and the diffusion of photoelectrons in the emission layer and the escape of the photoelectrons on the surface can be promoted. However, the inner side of the AlGaAs nanotube layer is not easy to adsorb an active layer (15) and receive illumination, and the invention carries out 45-degree angle plasma on AlGaAs of the nanotube structure on the basis of the nanotube photoelectric cathode structureSub-etching to form NEA AlGaAs (14) with open nanotube structure as electron emission layer of photocathode, which can further improve quantum efficiency of AlGaAs photocathode; and the sensitivity of the photocathode to incident light in different directions can be different, and the quantum efficiency of the photocathode is further improved.
Description
Technical Field
The invention relates to the field of photoelectron materials and devices, in particular to an NEA AlGaAs photocathode with an open nanotube structure and a preparation method thereof.
Background
The AlGaAs photocathode has the advantages of high sensitivity, small dark emission, concentrated energy distribution of emitted electrons, high quantum emission efficiency, controllable band gap and the like, so the AlGaAs photocathode has important application value and development prospect in the fields of low-light-level infrared detection, vacuum electron sources, image intensifiers and the like.
In recent years, with the rapid development of the conventional photocathode technology, the performance of the conventional photocathode is improved by optimizing parameters such as a substrate, the thickness of an emitting layer, and the doping concentration, so that the performance is relatively close to the limit, and the quantum efficiency and the service life of the photocathode are difficult to further improve.
The AlGaAs with the nanotube structure is used as the electron emission layer of the photocathode, so that the surface area of photoelectric emission can be increased, and the diffusion of photoelectrons in the emission layer and the escape of photoelectrons on the surface are promoted, thereby effectively solving the problem of low photoelectric conversion rate in the photocathode and being beneficial to improving the quantum efficiency of the AlGaAs photocathode. However, the inner side of the AlGaAs nanotube layer is not easy to adsorb the active layer and receive light.
Disclosure of Invention
In order to overcome the bottleneck of the prior art, the invention aims to provide a NEA AlGaAs photocathode with an open nanotube structure and a preparation method thereof. The electron emission layer of the photocathode adopts NEA AlGaAs with an open nanotube structure, so that the surface area of photoelectric emission can be further increased, the adsorption quantity of the activation layer on the open AlGaAs nanotube layer is enhanced, the diffusion of photoelectrons in the emission layer and the escape of photoelectrons on the surface are promoted, the problem of low photoelectric conversion rate in the photocathode is further solved, and the quantum efficiency of the AlGaAs photocathode is improved. And the sensitivity of the photocathode to incident light in different directions can be different, and the quantum efficiency of the photocathode is further improved.
In order to achieve the purpose, the invention adopts the technical scheme that:
a photocathode of NEA AlGaAs having an open nanotube structure, characterized in that: a substrate (11) and SiO which are arranged from bottom to top in sequence 2 The semiconductor device comprises a layer (12), a GaAs layer (13), an open AlGaAs nanotube layer (14) and an activation layer (15).
According to an embodiment of the present invention, the substrate (11) may be made of gallium arsenide, InP, InGaP, silicon, etc., and has a thickness of 400-600 μm.
According to a specific embodiment of the invention, in the layer (14) of AlGaAs nanotubes, the length of the AlGaAs nanotubes is 3 μm, and the inner and outer diameters are 100nm and 200nm, respectively.
According to a specific embodiment of the present invention, the SiO 2 The layer (12) is SiO with holes 2 And (3) a layer.
According to a specific embodiment of the invention, the open AlGaAs nanotube layer (14) is obtained by plasma etching the AlGaAs nanotube layer at an angle of 45 DEG to the axis.
According to a specific embodiment of the present invention, in the GaAs layer (13), GaAs is remaining after etching.
According to a specific embodiment of the invention, the activation layer (15) is a Cs/O activation layer with a thickness of 1-5 atomic layers, and is tightly adsorbed on the open AlGaAs nanotube layer by an ultrahigh vacuum activation process.
Preferably, the substrate (11) is gallium arsenide and has a thickness of 400-600 μm.
The invention also provides a preparation method of the NEA AlGaAs photocathode with the open type nanotube structure, which comprises the following steps:
(1) using SiO on a substrate 2 Partial masking is carried out, and GaAs nanowires are selectively grown on the partially masked substrate.
(2) Growing AlGaAs to form independent heterostructure nanowires, and removing a shell layer on the top of the nanowires through anisotropic dry etching.
(3) And removing the GaAs inside the core-shell structure by wet chemical etching to obtain the AlGaAs nanotube.
(4) And carrying out plasma etching on the AlGaAs nanotube layer in the direction forming an angle of 45 degrees with the axis to obtain the open AlGaAs nanotube.
(5) The Cs/O active layer is tightly adsorbed on the inner and outer wall layers of the open AlGaAs nanotube through an ultrahigh vacuum activation process, and the NEA AlGaAs photocathode with the open nanotube structure is obtained.
The beneficial effects of this technical scheme do: the invention provides a NEA AlGaAs photocathode with an open nanotube structure and a preparation method thereof. The nanotube structure is applied to the epitaxial layer of the electron emission layer of the photocathode, so that the surface area of the electron emission layer can be effectively increased, the photoelectric property and stability of the electron emission layer are improved, and finally the quantum efficiency, reliability and service life of the AlGaAs photocathode are improved.
Drawings
FIG. 1 is a schematic diagram of the photocathode structure of NEA AlGaAs of an open nanotube structure in an embodiment.
FIG. 2 is a schematic structural view of the open AlGaAs nanotube layer (14) in the example.
Detailed Description
Example 1
The invention is further described below with reference to fig. 1.
FIG. 1 shows a schematic diagram of a cathode structure of NEA AlGaAs with an open nanotube structure, which comprises a substrate (11) and SiO sequentially arranged from bottom to top 2 The semiconductor device comprises a layer (12), a GaAs layer (13), an open AlGaAs nanotube layer (14) and an activation layer (15).
The substrate (11) is gallium arsenide and has a thickness of 500 μm.
And carrying out double-sided polishing treatment on the gallium arsenide of the substrate (11).
Growing SiO with hexagonal holes on the substrate (11) 2 Layer (12) that is partially covered with SiO 2 The hexagonal holes are arranged in a triangular lattice with a lattice constant of 1mm, and the diameter of the hexagonal holes is 80 nm.
Selectively growing GaAs nanowires on the partially masked GaAs 111B substrate, and using trimethyl gallium, trimethyl aluminum and arsine to grow the GaAs nanowires by MOVPE in a horizontal system of 0.1atm, wherein the growth temperature is 750 ℃, the growth time is 20 minutes, and the nanowires are in a hexagonal column shape.
AlGaAs was then grown on the hexagonal-cylindrical nanowires using the same method to form freestanding heterostructure nanowires. The AlGaAs layer was grown at 850 ℃ for 40 minutes.
As AlGaAs grows on the sidewalls of the GaAs nanowires, a GaAs/AlGaAs core-shell structure is formed.
After the growth is complete, the thickness of the AlGaAs shell is 100 nm.
By dry etching, using CH 4 、H 2 Ar and N 2 A reactive ion beam etch was performed for 30 minutes to remove the AlGaAs layer on top of the nanowires.
Using NH 4 OH and H 2 O 2 The mixture is subjected to wet etching to remove GaAs in the AlGaAs shell layer, and after the etching is finished, the thickness of the AlGaAs layer is 50nm, so that the AlGaAs nanotube layer is obtained.
And carrying out plasma etching on the AlGaAs nanotube layer in a direction forming an angle of 45 degrees with the axis, wherein the power is 30W, the duration is 200s, and the etching gas of the plasma etching is Ar, so as to obtain the open AlGaAs nanotube.
The Cs/O active layer is tightly adsorbed on the open AlGaAs nanotube layer (14) through an ultrahigh vacuum activation process.
It must be noted that: the invention is not only suitable for the photoelectric cathode with AlGaAs as the electron emission layer, but also suitable for the photoelectric cathode with other materials as the electron emission layer.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and are intended to be included within the scope of the invention.
Claims (6)
1. A NEA AlGaAs photocathode having an open nanotube structure, comprising: a substrate (11) arranged from bottom to top in sequence,SiO 2 The semiconductor device comprises a layer (12), a GaAs layer (13), an open AlGaAs nanotube layer (14) and an activation layer (15).
2. A preparation method of NEA AlGaAs photocathode with open nanotube structure comprises the following process steps:
(1) using SiO on a substrate 2 Partial masking is carried out, and GaAs nanowires are selectively grown on the partially masked substrate.
(2) Growing AlGaAs to form independent heterostructure nanowires, and removing a shell layer on the top of the nanowires through anisotropic dry etching.
(3) And removing the GaAs inside the core-shell structure by using wet chemical etching to obtain the AlGaAs nanotube.
(4) And carrying out plasma etching on the AlGaAs nanotube layer in the direction forming an angle of 45 degrees with the axis to obtain the open AlGaAs nanotube.
(5) The Cs/O active layer is tightly adsorbed on the inner wall layer and the outer wall layer of the open AlGaAs nanotube through an ultrahigh vacuum activation process, and the NEA AlGaAs photocathode with the open nanotube structure is obtained.
3. The NEA AlGaAs photocathode of claim 1 having an open nanotube structure, comprising: in the open AlGaAs nanotube layer (14), the length of the AlGaAs nanotube is 2-4 μm, and the inner diameter and the outer diameter are 50-150 nm and 150-250 nm respectively.
4. The NEA AlGaAs photocathode with an open nanotube structure of claim 1, wherein: the active layer (15) comprises a Cs/O active layer with the thickness of 1-5 atomic layers, and is tightly adsorbed on the open AlGaAs nanotube layer (14) through an ultrahigh vacuum activation process.
5. The NEA AlGaAs photocathode with an open nanotube structure of claim 1, wherein: in the GaAs layer (13), GaAs is residual GaAs after etching.
6. The NEA AlGaAs photocathode of an open nanotube structure and the method of making the same as claimed in claim 2, wherein: the open AlGaAs nanotube layer (14) is subjected to plasma etching in a direction forming an angle of 45 degrees with an axis for the AlGaAs nanotube layer which grows normally, the power is 30-50W, the duration is 200-500 s, and the etching gas of the plasma etching is Ar.
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| CN202210448961.3A CN115101394A (en) | 2022-04-26 | 2022-04-26 | NEA AlGaAs photocathode with open nanotube structure and preparation method thereof |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752117A (en) * | 2015-03-03 | 2015-07-01 | 东华理工大学 | NEA electron source for vertically emitting AlGaAs/GaAs nanowires |
| CN113964003A (en) * | 2021-10-09 | 2022-01-21 | 电子科技大学长三角研究院(湖州) | GaN photocathode with nanotube structure and preparation method thereof |
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- 2022-04-26 CN CN202210448961.3A patent/CN115101394A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752117A (en) * | 2015-03-03 | 2015-07-01 | 东华理工大学 | NEA electron source for vertically emitting AlGaAs/GaAs nanowires |
| CN113964003A (en) * | 2021-10-09 | 2022-01-21 | 电子科技大学长三角研究院(湖州) | GaN photocathode with nanotube structure and preparation method thereof |
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