CN115093639A - Surface finish improved shielding material, preparation method and semiconductive shielding product - Google Patents
Surface finish improved shielding material, preparation method and semiconductive shielding product Download PDFInfo
- Publication number
- CN115093639A CN115093639A CN202210870905.9A CN202210870905A CN115093639A CN 115093639 A CN115093639 A CN 115093639A CN 202210870905 A CN202210870905 A CN 202210870905A CN 115093639 A CN115093639 A CN 115093639A
- Authority
- CN
- China
- Prior art keywords
- parts
- mxene
- mixture
- carbon black
- mixing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title claims abstract description 70
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229920005989 resin Polymers 0.000 claims abstract description 43
- 239000011347 resin Substances 0.000 claims abstract description 43
- 239000011159 matrix material Substances 0.000 claims abstract description 35
- 239000002270 dispersing agent Substances 0.000 claims abstract description 32
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 30
- 239000000203 mixture Substances 0.000 claims description 39
- 238000002156 mixing Methods 0.000 claims description 38
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000000243 solution Substances 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 14
- 238000001125 extrusion Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 14
- 239000006185 dispersion Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000003756 stirring Methods 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 239000008187 granular material Substances 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 7
- 239000012752 auxiliary agent Substances 0.000 claims description 4
- 241000872198 Serjania polyphylla Species 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 abstract description 4
- 239000006229 carbon black Substances 0.000 abstract 1
- 239000010936 titanium Substances 0.000 description 61
- 239000003963 antioxidant agent Substances 0.000 description 8
- 230000003078 antioxidant effect Effects 0.000 description 8
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 8
- 239000007822 coupling agent Substances 0.000 description 7
- 239000005038 ethylene vinyl acetate Substances 0.000 description 7
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 7
- 239000000314 lubricant Substances 0.000 description 7
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000009210 therapy by ultrasound Methods 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 description 4
- BGYHLZZASRKEJE-UHFFFAOYSA-N [3-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]-2,2-bis[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxymethyl]propyl] 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCC(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 BGYHLZZASRKEJE-UHFFFAOYSA-N 0.000 description 4
- 238000005054 agglomeration Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000005119 centrifugation Methods 0.000 description 4
- 229920006245 ethylene-butyl acrylate Polymers 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 238000005453 pelletization Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000006087 Silane Coupling Agent Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000005042 ethylene-ethyl acrylate Substances 0.000 description 3
- RKISUIUJZGSLEV-UHFFFAOYSA-N n-[2-(octadecanoylamino)ethyl]octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)NCCNC(=O)CCCCCCCCCCCCCCCCC RKISUIUJZGSLEV-UHFFFAOYSA-N 0.000 description 3
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- QYMGIIIPAFAFRX-UHFFFAOYSA-N butyl prop-2-enoate;ethene Chemical compound C=C.CCCCOC(=O)C=C QYMGIIIPAFAFRX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000013538 functional additive Substances 0.000 description 2
- 238000011534 incubation Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 2
- DEKVAWHRMRNKMI-UHFFFAOYSA-N 1,2-bis(tert-butylperoxy)-3-propan-2-ylbenzene Chemical group CC(C)C1=CC=CC(OOC(C)(C)C)=C1OOC(C)(C)C DEKVAWHRMRNKMI-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229920003020 cross-linked polyethylene Polymers 0.000 description 1
- 239000004703 cross-linked polyethylene Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 description 1
- FATBGEAMYMYZAF-UHFFFAOYSA-N oleicacidamide-heptaglycolether Natural products CCCCCCCCC=CCCCCCCCC(N)=O FATBGEAMYMYZAF-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
- C08K3/14—Carbides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/202—Applications use in electrical or conductive gadgets use in electrical wires or wirecoating
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Conductive Materials (AREA)
Abstract
The invention relates to a surface finish improved shielding material, a preparation method and a semiconductive shielding product. The shielding material with improved surface finish consists of matrix resin 55-65 weight portions, conducting carbon black 20-30 weight portions, and Ti 1-10 weight portions 3 C 2 MXene, 0.5-2 parts of dispersant, 3-6 parts of functional assistant and 0.9-2 parts of cross-linking agent. Wherein, Ti 3 C 2 The MXene has polar functional groups on the surface, has good compatibility with matrix resin, can improve the dispersibility of the conductive carbon black in the matrix resin, reduce the bulges on the surface of the shielding material, improve the surface smoothness of the shielding material, and simultaneously can improve the mechanical property of the shielding material.
Description
Technical Field
The invention relates to the technical field of high-voltage cable materials, in particular to a surface finish improved shielding material, a preparation method and a semiconductive shielding product.
Background
With the increasing demand for electricity at the user end, power cables are developed toward high transmission capacity and longer transmission distance, and the voltage class of the cables is continuously increased. The semiconductive shielding layer is used as an important component of the high-voltage cable and is distributed on the inner side and the outer side of the insulating layer. The semi-conductive shielding layer is used for forming an equivalent potential body with the cable conductor wire core and the metal shielding layer, eliminating burrs or bulges on the surface of the metal conductor, and realizing uniform electric field distribution and inhibition of partial discharge. Typically, the semiconductive shield layer is made of a semiconductive shield material. The semiconducting shield material has a decisive influence on the properties of the semiconducting shield layer. For example, the surface finish of the semiconductive shielding material has a certain influence on the surface performance, mechanical properties and conductivity of the semiconductive shielding layer. Conventional semiconductive shields do not perform well in terms of surface finish.
Disclosure of Invention
Based on this, there is a need for a surface finish-improved shielding material, a method of making the shielding material, and a semiconductive shielding article.
In order to solve the above technical problem, a technical solution of an embodiment of the present invention is as follows.
The surface smoothness improved shielding material comprises the following raw materials in parts by mass:
in one embodiment, the Ti 3 C 2 The preparation method of MXene comprises the following steps: mixing Ti 3 AlC 2 The precursor is mixed with hydrofluoric acid solution and reacts for 40 to 50 hours at the temperature of between 20 and 50 ℃.
In one embodiment, the hydrofluoric acid solution is a mixed solution of hydrochloric acid and lithium fluoride.
In one embodiment, Ti is added 3 AlC 2 The precursor is mixed with hydrofluoric acid solution, and the reaction is carried out for 40-50 h at 20-50 ℃, and then the method also comprises the following steps:
the mixture obtained by the reaction was centrifuged, and the upper liquid was dried.
A method for preparing a surface finish-modified shielding material as described in any of the above embodiments, comprising the steps of:
mixing the conductive carbon black with the Ti 3 C 2 Mixing MXene to obtain a first mixture;
mixing the first mixture, the matrix resin, the dispersing agent and the functional auxiliary agent to obtain a second mixture;
extruding and pelletizing the second mixture to obtain a pellet;
mixing the cut particles with the cross-linking agent to obtain a preform;
and carrying out heat treatment on the preform.
In one embodiment, the conductive carbon black is mixed with the Ti 3 C 2 Mixing MXene to obtain a first mixture comprising the steps of:
adding the Ti 3 C 2 Dispersing the Mxene in water to obtain an Mxene dispersion liquid;
mixing the Mxene dispersion with the conductive carbon black, and then drying to obtain the first mixture.
In one embodiment, the stirring speed when the first mixture, the base resin, the dispersant, and the functional aid are mixed is 150rpm to 200 rpm.
In one embodiment, the second mixture is extruded at an extrusion temperature of 120 ℃ to 180 ℃.
In one embodiment, the temperature of the heat treatment is 50 ℃ to 70 ℃.
A semiconducting shielding article made from the raw material for the surface finish-modified shielding material described in any of the above examples.
The shielding material with improved surface finish mainly comprises 55-65 parts by mass of matrix resin, 20-30 parts by mass of conductive carbon black and 1-10 parts by mass of Ti 3 C 2 MXene, 0.5-2 parts of dispersant, 3-6 parts of functional assistant and 0.9-2 parts of cross-linking agent. Wherein, Ti 3 C 2 The MXene surface has polar functional groups, has good compatibility with matrix resin, can improve the dispersibility of the conductive carbon black in the matrix resin, reduces the bulges on the surface of the shielding material, improves the surface smoothness of the shielding material, and can also improve the mechanical property of the shielding material.
Further, Ti 3 C 2 MXene has high specific surface area to thickness ratio, so that the conductive carbon black can be dispersed in Ti 3 C 2 MXene is surrounded by or supported on Ti 3 C 2 On the MXene sheet layer, the three-dimensional space contact between the two-dimensional material and the spherical material is realized, so that the MXene sheet layer can play a bridging role in matrix resin to form a stable conductive network and improve the conductivity of the shielding material.
Detailed Description
The present invention will be described in detail with reference to the following embodiments in order to make the aforementioned objects, features and advantages of the invention more comprehensible. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
One embodiment of the invention provides a shielding material with improved surface smoothness. The raw materials of the surface smoothness improved shielding material comprise the following components in parts by mass: 55 to 65 portions of matrix resin, 20 to 30 portions of conductive carbon black and Ti 3 C 2 MXene 1-1 parts0 portion, 0.5 portion to 2 portions of dispersant, 3 portions to 6 portions of functional assistant and 0.9 portion to 2 portions of cross linker. In the surface smoothness improving shielding material of this embodiment, the base resin is 55-65 parts, the conductive carbon black is 20-30 parts, and the Ti is 1-10 parts 3 C 2 MXene, 0.5-2 parts of dispersant, 3-6 parts of functional assistant and 0.9-2 parts of cross-linking agent. Wherein, Ti 3 C 2 The MXene has polar functional groups on the surface, has good compatibility with matrix resin, can improve the dispersibility of the conductive carbon black in the matrix resin, reduce the bulges on the surface of the shielding material, improve the surface smoothness of the shielding material, and simultaneously can improve the mechanical property of the shielding material. Further, Ti 3 C 2 MXene has high specific surface area to thickness ratio, so that the conductive carbon black can be dispersed in Ti 3 C 2 MXene is surrounded by or supported on Ti 3 C 2 On the MXene sheet layer, the three-dimensional space contact between the two-dimensional material and the spherical material is realized, so that the bridging effect can be realized in matrix resin, a stable conductive network is formed, and the conductive performance of the shielding material is improved.
In a specific example, Ti 3 C 2 MXene is a two-dimensional sheet structure. Alternatively, Ti 3 C 2 MXene is powder particle.
In a specific example, Ti 3 C 2 The preparation method of MXene comprises the following steps: mixing Ti 3 AlC 2 The precursor is mixed with hydrofluoric acid solution and reacts for 40 to 50 hours at the temperature of between 20 and 50 ℃. Alternatively, the reaction temperature is 20 ℃, 25 ℃, 30 ℃, 35 ℃, 40 ℃, 45 ℃ or 50 ℃. The reaction time is 40h, 42h, 45h, 48h or 50 h. It will be appreciated that the reaction is carried out in the form of a water bath. It will also be appreciated that during the reaction, stirring is maintained. Further, after reacting for 40 to 50 hours, the resulting mixture was subjected to centrifugation several times. For example, the centrifugation speed is 3000 r/min-4000 r/min, and the time of each centrifugation is 5 min-10 min. The centrifugation times are 8-15.
In one specific example, the hydrofluoric acid solution is a mixed solution of hydrochloric acid and lithium fluoride. Optionally, the concentration of hydrochloric acid is 20% to 30%. When preparing the hydrofluoric acid solution, adding lithium fluoride into hydrochloric acid, and then stirring and reacting for 8-12 h.
Further, adding Ti 3 AlC 2 The precursor is mixed with hydrofluoric acid solution, and the reaction is carried out for 40-50 h at 20-50 ℃, and then the method also comprises the following steps: the mixture obtained by the reaction was centrifuged, and the upper liquid was dried. Optionally, transferring the mixture obtained by the reaction into a centrifuge tube, performing ultrasonic treatment for 1h by using a water bath, centrifuging for 30min at 3500r/min after the ultrasonic treatment is finished, collecting the upper-layer liquid, repeating the ultrasonic treatment, centrifuging, and collecting the upper-layer liquid. Then drying the upper layer liquid to obtain Ti 3 C 2 MXene. In this case, Ti can be obtained 3 C 2 MXene powder particles.
In a specific example, the raw material of the surface smoothness improving type shielding material comprises the following components in parts by mass: 60 to 64 portions of matrix resin, 25 to 29 portions of conductive carbon black and Ti 3 C 2 1 to 5 portions of MXene, 1 to 1.5 portions of dispersant, 3 to 5 portions of functional assistant and 1 to 2 portions of cross-linking agent.
Further, conductive carbon black and Ti 3 C 2 The mass ratio of MXene is 29: 1-25: 5. Preferably, the conductive carbon black is mixed with Ti 3 C 2 The mass ratio of MXene is 26: 4.
As an alternative example of the mass part of the base resin, the mass part of the base resin may be, but is not limited to, 55 parts, 56 parts, 57 parts, 58 parts, 59 parts, 60 parts, 61 parts, 62 parts, 63 parts, 64 parts, or 65 parts. It is understood that the mass fraction of the matrix resin may be selected from the range of 55 to 65 parts.
As an alternative example of the mass part of the conductive carbon black, the mass part of the conductive carbon black may be, but is not limited to, 20 parts, 21 parts, 22 parts, 23 parts, 24 parts, 25 parts, 26 parts, 27 parts, 28 parts, 29 parts, or 30 parts. It is understood that the mass fraction of the conductive carbon black may be selected from the range of 20 parts to 30 parts.
As Ti 3 C 2 An alternative example of the parts by mass of MXene, Ti 3 C 2 The mass part of MXene may be, but is not limited to, 1 part, 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts or 10 parts. Understandably, Ti 3 C 2 MXene may be suitably selected from the range of 1 to 10 parts by mass.
As an alternative example of the mass part of the dispersant, the mass part of the dispersant may be, but is not limited to, 0.5 parts, 0.8 parts, 1 part, 1.1 parts, 1.2 parts, 1.4 parts, 1.5 parts, 1.7 parts, 1.9 parts, or 2 parts. It is understood that the mass portion of the dispersant may be selected from the range of 0.5 to 2 parts.
As an alternative example of the mass part of the functional aid, the mass part of the functional aid may be, but is not limited to, 3 parts, 3.2 parts, 3.5 parts, 3.8 parts, 4 parts, 4.2 parts, 4.5 parts, 4.8 parts, 5 parts, 5.2 parts, 5.5 parts, 5.8 parts, or 6 parts. It is understood that the mass portion of the functional assistant can be selected from 3 to 6 portions.
As an alternative example of the mass part of the crosslinking agent, the mass part of the crosslinking agent may be, but is not limited to, 0.9 parts, 1 part, 1.1 parts, 1.2 parts, 1.3 parts, 1.4 parts, 1.5 parts, 1.6 parts, 1.7 parts, 1.8 parts, 1.9 parts, or 2 parts. It is understood that the mass fraction of the crosslinking agent may be suitably selected from the range of 0.9 to 2 parts.
It is understood that the surface finish improved type shield is a surface finish improved type high voltage cable semiconductive shield. That is, a further embodiment of the present invention provides a surface finish improved high voltage cable semiconductive shield. The raw materials of the semi-conductive shielding material for the high-voltage cable with the improved surface smoothness comprise the following components in parts by mass: 55 to 65 portions of matrix resin, 20 to 30 portions of conductive carbon black and Ti 3 C 2 1 to 10 portions of MXene, 0.5 to 2 portions of dispersant, 3 to 6 portions of functional assistant and 0.9 to 2 portions of cross-linking agent.
Yet another embodiment of the present invention provides a surface finish-improved shielding material. The surface smoothness improved shielding material is prepared from the following components in parts by mass: 55 to 65 portions of matrix resin and conductive carbon20 to 30 portions of black and Ti 3 C 2 MXene 1-10 parts, dispersant 0.5-2 parts, functional assistant 3-6 parts, and cross-linking agent 0.9-2 parts. In the present example, the resin composition comprises 55 to 65 parts by mass of a base resin, 20 to 30 parts by mass of conductive carbon black, and 1 to 10 parts by mass of Ti 3 C 2 MXene, 0.5-2 parts of dispersant, 3-6 parts of functional assistant and 0.9-2 parts of cross-linking agent, so that the shielding material has good surface smoothness, good conductivity and good mechanical properties.
In a specific example, as the selection of the functional assistant, the functional assistant is prepared from the following components in parts by mass: 1 to 2 parts of coupling agent, 1 to 3 parts of lubricant and 0.6 to 1 part of antioxidant. Optionally, the coupling agent is a silane coupling agent. The lubricant is at least one of zinc stearate and pentaerythritol. The antioxidant is at least one of antioxidant 1010 and antioxidant 168. Further optionally, a silane coupling agent KH 550. The antioxidant is prepared by mixing an antioxidant 1010 and an antioxidant 168 according to the mass ratio of (1.5-2.5): 1. Further, the mass ratio of the antioxidant 1010 and the antioxidant 168 may be, but is not limited to, 1.8:1, 2:1, 2.2:1, 2.5: 1. Optionally, the functional assistant is formed by mixing a coupling agent, a lubricant and an antioxidant.
It is understood that, among the functional additives, the mass part of the coupling agent may be, but is not limited to, 1 part, 1.2 parts, 1.5 parts, 1.8 parts, 2 parts, or the like. The mass part of the lubricant may be, but is not limited to, 1 part, 1.2 parts, 1.5 parts, 1.8 parts, 2 parts, 2.2 parts, 2.5 parts, 2.8 parts, 3 parts, or the like. The mass portion of the antioxidant can be but is not limited to 0.6 portion, 0.7 portion, 0.8 portion, 0.9 portion, 1 portion, or the like. It is also understood that the mass portion of the coupling agent can be selected from 1 to 2 portions, the mass portion of the lubricant can be selected from 1 to 3 portions, and the mass portion of the antioxidant can be selected from 0.6 to 1 portion.
As an alternative example of the matrix resin, the matrix resin is at least one of ethylene-vinyl acetate copolymer (EVA), ethylene-butyl acrylate copolymer (EBA), and ethylene-ethyl acrylate copolymer (EEA). When preparing the semiconductive shielding material for a high-voltage cable, the shielding material for a crosslinked polyethylene insulated cable can adopt ethylene-vinyl acetate copolymer (EVA), ethylene-butyl acrylate copolymer (EBA) and ethylene-ethyl acrylate copolymer (EEA) as a matrix. However, when the ethylene-vinyl acetate copolymer (EVA) is applied to a shielding material for a cable with a voltage level of 110kV or above, a small amount of acid substances are released by the EVA under high voltage to corrode a copper conductor, so that the service life of the cable is shortened. Preferably, the matrix resin is an ethylene ethyl acrylate copolymer (EEA).
As an alternative example of the conductive carbon black, the conductive carbon black has a DBP (dibutyl phthalate) absorption value of 120ml/100g to 200ml/170 g. For example, the conductive carbon black has a DBP absorption of 120ml/100g, 130ml/100g, 150ml/100g, 160ml/100g, 170ml/100g, or the like. Furthermore, the ash content of the conductive carbon black is less than or equal to 0.2 percent. Further, the ash content of the conductive carbon black is < 0.2%, and further, the ash content of the conductive carbon black is < 0.1%.
As an alternative example of the dispersant, the dispersant is at least one of Ethylene Bis Stearamide (EBS) and oleamide.
As an alternative example of the crosslinking agent, the crosslinking agent is at least one of di-t-butylperoxyisopropyl benzene (BIPB) and dicumyl peroxide (DCP).
In still another embodiment of the present invention, a method for preparing the shielding material with improved surface smoothness is provided. The preparation method comprises the following steps: mixing conductive carbon black with Ti 3 C 2 Mixing MXene to obtain a first mixture; mixing the first mixture, matrix resin, a dispersing agent and a functional auxiliary agent to obtain a second mixture; extruding and pelletizing the second mixture to obtain a pellet; mixing the cut particles with a cross-linking agent to obtain a preform; and (4) performing heat treatment on the preform. In the preparation method of the embodiment, the preparation method is simple and feasible and is suitable for popularization.
In one specific example, conductive carbon black is mixed with Ti 3 C 2 Mixing MXene to obtain a first mixture, comprising the following steps: mixing Ti 3 C 2 Mxene, dispersing in water to obtain an Mxene dispersion liquid; the Mxene dispersion was mixed with conductive carbon black and then dried to obtain a first mixture. In this example, conductive carbon black and Ti were mixed 3 C 2 MXene A first mixture was made by a solution blending process. Ti (titanium) 3 C 2 MXene has good water dispersibility, can assist in dispersing the conductive carbon black in an aqueous solution to reduce the agglomeration of the conductive carbon black, reduces the agglomeration phenomenon of the conductive carbon black in matrix resin in the extrusion process, and can further improve the surface smoothness of the shielding material. In the example, when the Mxene dispersion liquid is mixed with the conductive carbon black, water bath ultrasound is carried out for 1h to 5h, and then drying is carried out for 10h to 20h at 100 ℃ to 150 ℃. Optionally, the time of the water bath ultrasound is 1h, 2h, 3h, 4h or 5 h. The drying temperature is 100 deg.C, 110 deg.C, 120 deg.C, 130 deg.C, 140 deg.C or 150 deg.C. The drying time is 10h, 12h, 15h, 18h or 20 h. Further alternatively, mixing the Mxene dispersion with the conductive carbon black is adding the conductive carbon black to the Mxene dispersion.
In another specific example, conductive carbon black is mixed with Ti 3 C 2 MXene to obtain a first mixture, and optionally conductive carbon black and Ti 3 C 2 MXene powder particles were solid-solid mixed to obtain a first mixture.
In a specific example, the stirring speed when the first mixture, the base resin, the dispersant, and the functional aid are mixed is 150rpm to 200 rpm. Alternatively, the stirring speed when the first mixture, the base resin, the dispersant, and the functional aid are mixed is 150rpm, 160rpm, 170rpm, 180rpm, 190rpm, 200rpm, or the like. Optionally, the mixing time for mixing the first mixture, the matrix resin, the dispersant and the functional additive is 8min, 10min, 15min or 20min, and the like. It can be understood that the stirring and mixing are carried out in the mixer, and the speed, the time and the like of the stirring and mixing can be conveniently controlled by setting the working parameters of the mixer.
In one specific example, the second mixture is extruded at an extrusion temperature of 120 ℃ to 180 ℃. For example, the extrusion temperature is 130 ℃, 140 ℃, 150 ℃, 160 ℃, 170 ℃ or 180 ℃ and the like. Further, the extrusion is carried out in five stages at 130 deg.C, 140 deg.C, 150 deg.C, 160 deg.C and 150 deg.C. It can be understood that the extrusion is carried out in an extruder, and the rotation speed of a main machine of the extruder is controlled to be 80 rpm-150 rpm during the extrusion. For example, the rotation speed of the extruder is controlled to 80rpm, 90rpm, 100rpm, 110rpm, 120rpm, 130rpm, 140rpm, or the like. Alternatively, the extrusion is carried out in a twin screw extruder.
Further, before mixing the cut pellets with the crosslinking agent, the method also comprises the following steps: keeping the temperature of the cut granules at 60-80 ℃. Alternatively, the incubation temperature is 60 ℃, 65 ℃, 70 ℃, 75 ℃, or 80 ℃, etc. And further keeping the temperature for 3-8 h. Optionally, the incubation time is 3h, 4h, 5h, 6h, 7h, 8h, or the like.
Still further, before mixing the cut pellets with the crosslinking agent, the method further comprises the following steps: and grinding the cross-linking agent. The grinding time is 8 min-20 min. Specifically, the grinding time is 8min, 10min, 15min, 20min or the like. It will be appreciated that grinding may be carried out in a grinding mill.
In one particular example, the pelletizing is underwater. Understandably, after underwater pelletizing, the pelletized material is dried to remove water and then is subjected to heat preservation.
In a specific example, the temperature of the heat treatment is 50 ℃ to 70 ℃. Alternatively, the temperature of the heat treatment may be 50 ℃, 55 ℃, 60 ℃, 65 ℃, or 70 ℃. Further, the time of the heat treatment is 5 to 10 hours. Alternatively, the time of the heat treatment is 5h, 6h, 7h, 8h, 9h, 10h, or the like. Through the heating treatment, the cross-linking agent can be fully absorbed by the granulated material, so that the performance of the surface finish improved shielding material is improved.
It is understood that in preparing the surface smoothness improving type shield, the conductive carbon black is mixed with the Ti 3 C 2 The MXene mixing method further comprises the following steps of: mixing matrix resin, conductive carbon black and Ti 3 C 2 MXene, a dispersing agent, a functional assistant and a cross-linking agent are dried to remove moisture in all the raw materials.
Yet another embodiment of the present invention provides a semiconductive shield article. The semiconductive shielding product is made from raw materials comprising the surface finish improvement type shielding material. Alternatively, the semiconductive shielding article is made by extrusion molding a raw material comprising the above-described surface finish-improving type shielding material. Further optionally, the semiconductive shielding article is a semiconductive shield. Optionally, the semiconductive shield article is a high voltage cable semiconductive shield article.
In one particular example, the semiconductive shield article also includes an insulating material in the raw materials from which the semiconductive shield article is prepared. The semiconductive shielding product is prepared by extrusion molding of raw materials comprising the surface finish improved shielding material and the insulating material.
The following are specific examples.
Example 1
In this embodiment, the raw materials for preparing the surface smoothness improved shielding material comprise, by mass: 63.5 parts of matrix resin, 29 parts of conductive carbon black and Ti 3 C 2 1 part of MXene, 1 part of dispersant, 4.5 parts of functional assistant and 1 part of cross-linking agent. Wherein the matrix resin is an ethylene-ethyl acrylate copolymer. The DBP absorption value of the conductive carbon black is 120-150 ml/100g, and the ash content of the conductive carbon black is less than 0.2%. The dispersant is ethylene bis stearamide. The cross-linking agent is bis-tert-butylperoxyisopropyl benzene (BIPB).
The functional auxiliary agent is prepared by mixing the following raw materials in parts by weight: 2 parts of coupling agent, 2 parts of lubricant and 0.5 part of antioxidant. Wherein the coupling agent is a silane coupling agent KH 550. The lubricant is zinc stearate. The antioxidant is prepared by mixing an antioxidant 1010 and an antioxidant 168 according to the mass ratio of 2: 1.
In this example, Ti 3 C 2 The preparation method of MXene comprises the following steps:
s101: 60ml of 20% hydrochloric acid is taken, 5g of lithium fluoride is added into the hydrochloric acid solution, and then the solution is placed into a water bath kettle to be heated and stirred for 12 hours.
S102: 3g of Ti are taken 3 AlC 2 Adding the precursor into the solution obtained in S101, carrying out water bath at 50 ℃, continuously stirring for 48h, centrifuging at 3500r/min for 5min, and repeating for 10 times.
S103: transferring the mixture obtained in the step S102 into a centrifugal tube, performing ultrasonic treatment for 1h by using water bath,centrifuging at 3500r/min for 30min after the ultrasound treatment, collecting the upper layer liquid, repeating the ultrasound treatment, centrifuging, and collecting the upper layer liquid. Then drying the upper layer liquid to obtain Ti 3 C 2 MXene powder particles.
The preparation method of the shielding material with improved surface smoothness in the embodiment comprises the following steps:
s201: mixing base resin, conductive carbon black and Ti 3 C 2 MXene powder particles, a dispersing agent, a functional assistant and a cross-linking agent are dried for 24 hours at 60 ℃ to remove moisture.
S202: mixing Ti 3 C 2 Dispersing the Mxene in 350mL of distilled water, magnetically stirring for 1h at the rotating speed of 100r/min to obtain an Mxene dispersion liquid; conductive carbon black was added to the Mxene dispersion, sonicated in a water bath for 1.5h, and then dried at 120 ℃ for 12h to give a first mixture.
S203: the first mixture, the matrix resin, the dispersant and the functional aid were mixed at a stirring speed of 160rpm for 10min to obtain a second mixture.
S204: and melting and extruding the second mixture in a double-screw extruder, wherein five-section extrusion is adopted, and the temperature of the five sections is 130 ℃, 140 ℃, 150 ℃, 160 ℃ and 150 ℃. The rotation speed of the main machine is 100 rpm. And after extrusion, cutting into granules and drying to obtain cut granules.
S205: drying the granulated material to remove water, and then preserving the heat at 60 ℃ for 4 hours.
S206: the crosslinker was ground in a mill for 8 min.
S207: and mixing the heat-preserved granulated material with the ground cross-linking agent for 10min to obtain a preform.
S208: the preform was heated at 60 ℃ for 10 h.
After heating, the surface-finish-improved shielding material in the present embodiment was obtained.
Example 2
Compared with embodiment 1, the present embodiment is different in that: according to the mass parts, the preparation raw materials of the high-voltage cable semiconductive shielding material in the embodiment are as follows: 63.5 parts of matrix resin, 28 parts of conductive carbon black and Ti 3 C 2 MXene 2 parts, dispersant 1 part, and dispersant4.5 parts of energy-saving additive and 1 part of cross-linking agent.
Example 3
The present embodiment is different from embodiment 1 in that: according to the mass parts, the preparation raw materials of the high-voltage cable semiconductive shielding material in the embodiment are as follows: 63.5 parts of matrix resin, 27 parts of conductive carbon black and Ti 3 C 2 3 parts of MXene, 1 part of dispersant, 4.5 parts of functional assistant and 1 part of crosslinking agent.
Example 4
The present embodiment is different from embodiment 1 in that: according to the mass parts, the preparation raw materials of the high-voltage cable semiconductive shielding material in the embodiment are as follows: 63.5 parts of matrix resin, 26 parts of conductive carbon black and Ti 3 C 2 MXene 4 parts, dispersant 1 part, functional assistant 4.5 parts and cross-linking agent 1 part.
Comparative example 1
The present embodiment is different from embodiment 1 in that: according to the mass parts, the preparation raw materials of the high-voltage cable semiconductive shielding material in the embodiment are as follows: 63.5 parts of matrix resin, 30 parts of conductive carbon black and Ti 3 C 2 0 part of MXene, 1 part of dispersant, 4.5 parts of functional assistant and 1 part of crosslinking agent.
Comparative example 2
The present embodiment is different from embodiment 1 in that: according to the mass parts, the preparation raw materials of the high-voltage cable semiconductive shielding material in the embodiment are as follows: 61.5 parts of matrix resin, 32 parts of conductive carbon black and Ti 3 C 2 0 part of MXene, 1 part of dispersant, 4.5 parts of functional assistant and 1 part of crosslinking agent.
Comparative example 3
The present embodiment is different from embodiment 1 in that: according to the mass parts, the preparation raw materials of the high-voltage cable semiconductive shielding material in the embodiment are as follows: 58.5 parts of matrix resin, 35 parts of conductive carbon black and Ti 3 C 2 0 part of MXene, 1 part of dispersant, 4.5 parts of functional assistant and 1 part of crosslinking agent.
Test example
The shielding materials obtained in examples and comparative examples were each pressed into a test board having a thickness of 1mm and a length and width of 10cm × 10 cm. Then testing the test board for tensile strength, elongation at break, normal temperature volume resistivity and 90 ℃ volume resistivity respectively; a sheet having a length of 1m and a width of 0.02m was prepared on a single screw basis to observe the number of surface projections. The test results are shown in table 1.
TABLE 1
As can be seen from Table 1, the surface finish of the shielding material in the examples was superior to that of the comparative example. In examples 1 to 4, the surface smoothness was gradually improved. This is probably due to Ti 3 C 2 MXene has good water dispersibility, conductive carbon black is dispersed in an aqueous solution in an auxiliary way, so that the agglomeration of the conductive carbon black is reduced, the agglomeration phenomenon in the extrusion process is reduced, and the surface smoothness of the shielding material is improved.
In addition, Ti in examples 1 to 4 3 C 2 The MXene content gradually increased, and the resistivity decreased from 17.3. omega. cm to 8.1. omega. cm at 23 ℃ and from 224.8. omega. cm to 76.3. omega. cm at 90 ℃. The resistivity is significantly improved. This is probably due to the two-dimensional sheet-like Ti 3 C 2 MXene can form a bridging effect between conductive carbon black particles to form a stable conductive network. Comparative example 3 used 35 parts of conductive carbon black and example 1 had a similar resistivity. This reflects Ti from the side 3 C 2 The MXene is introduced to effectively reduce the consumption of the conductive carbon black, so that the shielding material is easier to process.
Further, mechanical properties of the shielding material in the examples follow Ti 3 C 2 The increase in MXene content is probably due to the two-dimensional flaky Ti 3 C 2 MXene has polar functional groups such as: -OH, -F, -O, -Cl, which has better compatibility with polar matrix resins and can thus be further improvedHigh mechanical property of shielding material.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that various changes and modifications can be made by those skilled in the art without departing from the spirit of the invention, and these changes and modifications are all within the scope of the invention. Therefore, the protection scope of the present patent should be subject to the appended claims, and the description can be used to interpret the contents of the claims.
Claims (10)
1. The surface smoothness improved shielding material is characterized by comprising the following raw materials in parts by mass:
2. the surface finish-modified screen material according to claim 1, wherein the Ti is 3 C 2 The preparation method of MXene comprises the following steps: mixing Ti 3 AlC 2 The precursor is mixed with hydrofluoric acid solution and reacts for 40 to 50 hours at the temperature of between 20 and 50 ℃.
3. The surface smoothness improving barrier according to claim 2, wherein the hydrofluoric acid solution is a mixed solution of hydrochloric acid and lithium fluoride.
4. The surface finish-improving mask material according to any one of claims 2 to 3, wherein Ti is added 3 AlC 2 The precursor is mixed with hydrofluoric acid solution, and the reaction is carried out for 40-50 h at 20-50 ℃, and then the method also comprises the following steps:
the mixture obtained by the reaction was centrifuged, and the upper liquid was dried.
5. A method for producing the surface smoothness improving shield material according to any one of claims 1 to 4, comprising the steps of:
mixing the conductive carbon black with the Ti 3 C 2 Mixing MXene to obtain a first mixture;
mixing the first mixture, the matrix resin, the dispersing agent and the functional auxiliary agent to obtain a second mixture;
extruding and granulating the second mixture to obtain a granular material;
mixing the cut particles with the cross-linking agent to obtain a preform;
and heating the preform.
6. The method of producing a surface smoothness improving shield according to claim 5, wherein said conductive carbon black and said Ti are mixed 3 C 2 Mixing MXene to obtain a first mixture, comprising the following steps:
adding the Ti 3 C 2 Dispersing the Mxene in water to obtain an Mxene dispersion liquid;
mixing the Mxene dispersion with the conductive carbon black, and then drying to obtain the first mixture.
7. The method of producing a surface smoothness-improving shield material according to claim 5, wherein a stirring speed at which the first mixture, the base resin, the dispersant, and the functional aid are mixed is 150rpm to 200 rpm.
8. The method of producing a surface smoothness improving shield according to claim 5, wherein the second mixture is extruded at an extrusion temperature of 120 ℃ to 180 ℃.
9. The method for producing a surface smoothness-improving shield material according to any one of claims 5 to 8, wherein the temperature of the heat treatment is 50 ℃ to 70 ℃.
10. A semiconductive shield product, characterized by being produced from a raw material comprising the surface smoothness improving shield material according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870905.9A CN115093639B (en) | 2022-07-22 | 2022-07-22 | Surface finish improved shielding material, preparation method and semiconductive shielding product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210870905.9A CN115093639B (en) | 2022-07-22 | 2022-07-22 | Surface finish improved shielding material, preparation method and semiconductive shielding product |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115093639A true CN115093639A (en) | 2022-09-23 |
| CN115093639B CN115093639B (en) | 2024-06-21 |
Family
ID=83299494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210870905.9A Active CN115093639B (en) | 2022-07-22 | 2022-07-22 | Surface finish improved shielding material, preparation method and semiconductive shielding product |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115093639B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110498964A (en) * | 2019-09-25 | 2019-11-26 | 上海交通大学 | A kind of high-tension cable thermoplasticity semi-conductive shielding material and preparation method thereof |
| CN113980359A (en) * | 2021-11-22 | 2022-01-28 | 北京化工大学 | Modified MXene loaded metal oxide composite and preparation method and application thereof |
| CN114031867A (en) * | 2021-12-14 | 2022-02-11 | 山东鲁泰控股集团有限公司石墨烯高分子复合材料研发中心 | MXene-graphene-PVC composite material and preparation method thereof |
-
2022
- 2022-07-22 CN CN202210870905.9A patent/CN115093639B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110498964A (en) * | 2019-09-25 | 2019-11-26 | 上海交通大学 | A kind of high-tension cable thermoplasticity semi-conductive shielding material and preparation method thereof |
| CN113980359A (en) * | 2021-11-22 | 2022-01-28 | 北京化工大学 | Modified MXene loaded metal oxide composite and preparation method and application thereof |
| CN114031867A (en) * | 2021-12-14 | 2022-02-11 | 山东鲁泰控股集团有限公司石墨烯高分子复合材料研发中心 | MXene-graphene-PVC composite material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 孙博阳: "热塑性电力电缆半导电屏蔽材料的研究", 《中国优秀硕士学位论文全文数据库 工程科技I辑》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115093639B (en) | 2024-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110498964B (en) | Thermoplastic semiconductive shielding material for high-voltage cable and preparation method thereof | |
| CN101633766B (en) | Environment-friendly flame retardant semiconductive PVC sheathing compound used for ultra-pressure cable sheath | |
| CN115044130A (en) | Shielding material based on carbon nanofiber modification and preparation method and application thereof | |
| CN115322472B (en) | Semiconductive shielding material based on compound resin and preparation method and application thereof | |
| CN114685883A (en) | Ultra-smooth high-voltage cable semi-conductive inner shielding material and preparation method thereof | |
| CN115216082A (en) | Stripping strength improved semi-conductive shielding material, preparation method, product and cable | |
| CN115304854B (en) | High-voltage cable semiconductive shielding material based on graphene oxide dispersed conductive carbon black and preparation method thereof | |
| CN113881133A (en) | High-voltage cable semiconductive shielding material with conductive carbon black efficiently dispersed and preparation method thereof | |
| CN113150438A (en) | Graphene-doped semiconductive shielding material for thermoplastic cable and preparation method thereof | |
| CN114292466A (en) | Modified polypropylene insulating material for medium and low voltage power cable and preparation method thereof | |
| CN115093639B (en) | Surface finish improved shielding material, preparation method and semiconductive shielding product | |
| CN105255017A (en) | Ethylene-propylene rubber insulating material for medium voltage power cable and preparation method thereof | |
| WO2023065430A1 (en) | High-voltage cable semi-conductive shielding material featuring high-efficiency dispersion of conductive carbon black and preparation method therefor | |
| CN110982186A (en) | Insulating layer of electric appliance connecting wire and preparation method thereof | |
| CN110591216A (en) | Shielding material for conductive polypropylene power cable | |
| CN113698723B (en) | Polypropylene-based thermoplastic semiconductive shielding material for environment-friendly cable and preparation method thereof | |
| CN109880204A (en) | Modified low smoke halogen-free flame-retardant polyolefin semiconductive material of a kind of graphene and preparation method thereof | |
| CN109841347B (en) | Anti-aging power cable | |
| CN108395610A (en) | A kind of carbon nanotube shield semiconductors material and preparation method thereof | |
| CN116120655A (en) | Cable semiconductive shielding material of ionic liquid modified conductive carbon black and preparation method thereof | |
| CN113150487A (en) | Preparation method of thermoplastic shielding material | |
| CN109485987B (en) | Raw material composition, heat-conducting insulating material, preparation method and application | |
| CN109841346B (en) | Breakdown-resistant power cable | |
| CN115011027A (en) | High-voltage cable semiconductive shielding material with weak PTC effect and preparation method and application thereof | |
| CN117903518A (en) | High-voltage semi-conductive shielding material and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |