CN115084300B - Single thin film photovoltaic cell, photovoltaic cell panel and manufacturing method thereof - Google Patents
Single thin film photovoltaic cell, photovoltaic cell panel and manufacturing method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
- H01L31/0443—PV modules or arrays of single PV cells including bypass diodes comprising bypass diodes integrated or directly associated with the devices, e.g. bypass diodes integrated or formed in or on the same substrate as the photovoltaic cells
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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Abstract
The invention provides a single thin film photovoltaic cell, a photovoltaic cell panel and a manufacturing method thereof, which relate to the field of photovoltaic cells, and accurately protect each single thin film photovoltaic cell by integrating a bypass diode for bypassing a photo-generated region in each single thin film photovoltaic cell, rather than protecting a series of single photovoltaic cells connected in series by a traditional bypass diode, and thus the negative bias born by the single thin film photovoltaic cell is reduced as much as possible, the device loss and the temperature rise caused by the negative bias are also reduced as much as possible, and the bypass diode is integrated in the single thin film photovoltaic cell, so that an external lead is saved, the overall reliability is improved, the parasitic series resistance is reduced, the loss is reduced, the cost is reduced, the compatibility to the thin film photovoltaic technology is stronger, and a bypass shunt region and an insulation region can be formed in the process of preparing the photo-generated region, namely the process is saved.
Description
Technical Field
The invention relates to the field of photovoltaic cells, in particular to a single thin film photovoltaic cell, a photovoltaic cell panel and a manufacturing method thereof.
Background
Solar energy has gained widespread attention and application due to its unique advantages. Photovoltaic panels are currently the primary devices for generating electricity from light, providing power for a variety of applications.
Typically, a photovoltaic panel is made up of a plurality of individual cells connected in series and/or parallel to provide a desired voltage and in parallel to provide a desired current. In practical applications, when the photo-generated current of a single cell in the photovoltaic panel is lower than that of other single cells connected in series with the photovoltaic panel (for example, due to shading, manufacturing defects, etc.), the single cell can work in a negative bias state, if the current passes under the negative bias condition, heat can be generated to cause the temperature to be too high (thus damaging the device), and the service life of the device can be reduced or irreversibly damaged (for example, reverse breakdown or migration of charged ions or impurities in the material, etc.) due to the negative bias.
Currently, conventional silicon photovoltaic technology utilizes a bypass shunt diode to protect multiple cells in series (often in an unequal number of 15-24) to limit the reverse bias voltage of the multiple cells in series from breakdown and permanent damage, which benefits from the silicon cells being able to withstand higher negative biases (e.g., over-15V, i.e., absolute values of negative biases greater than 15 volts) and their lower series resistance and good circuit element compatibility (e.g., to facilitate external connection of related circuit elements using wires, including but not limited to bypass diodes).
However, for thin film photovoltaics, due to the complex wiring and potentially high series resistance, the bypass shunt diode is not generally used to limit the negative bias, which limits the reliability of the thin film photovoltaic product for long-term outdoor operation, especially for new photovoltaic technologies based on perovskite photovoltaic materials, which have poor capability of withstanding high temperatures and negative bias. However, with the pursuit of flexible size and light weight of photovoltaic panels in industry, batteries using novel thin film materials are imperative.
Therefore, it is important to control the magnitude and temperature control of the negative bias voltage when the battery based on the novel thin film material is operated, to avoid breakdown and permanent damage thereof.
Disclosure of Invention
The application provides a single thin film photovoltaic cell, comprising: the photovoltaic cell main area is used for receiving light to generate current or voltage and comprises a positive electrode end and a negative electrode end, and a diode is equivalently arranged between the positive electrode end and the negative electrode end of the photovoltaic cell main area; the bypass shunt area comprises a positive electrode end and a negative electrode end, a diode is equivalently arranged between the positive electrode end and the negative electrode end of the bypass shunt area, the positive electrode end of the bypass shunt area and the negative electrode end of the photovoltaic cell main area are positioned on the first side of the single thin film photovoltaic cell, and the negative electrode end of the bypass shunt area and the positive electrode end of the photovoltaic cell main area are positioned on the second side of the single thin film photovoltaic cell, so that when the photovoltaic cell main area is subjected to negative bias, the bypass shunt area is subjected to positive bias; and the insulation area is positioned between the photovoltaic cell main area and the bypass shunt area and is used for isolating the photovoltaic cell main area from the bypass shunt area.
The application also provides a photovoltaic cell panel, which comprises: the single thin film photovoltaic cell described above, wherein the plurality of single thin film photovoltaic cells are connected in series and/or parallel, wherein the bypass shunt region of each single thin film photovoltaic cell is disposed below the photovoltaic cell main region of the single thin film photovoltaic cell adjacent thereto.
The application also provides a manufacturing method of the photovoltaic cell panel, which comprises the following steps: s1, providing a transparent substrate; s2, forming a transparent conductive film on a substrate; s3, dividing the transparent conductive film into N sections, and forming isolation grooves between two adjacent sections of transparent conductive films, wherein N is a positive integer greater than 1; s4, not filling materials in the grooves close to the first side of the photovoltaic cell panel, forming a lower layer of first conductive type semiconductor material on a partial area of the transparent conductive film close to the first side of the photovoltaic cell panel, and forming a lower layer of first conductive type semiconductor material in the rest grooves and on partial areas of the transparent conductive film on two sides of the grooves; s5, forming a lower layer of second conductivity type semiconductor material between the lower layer of first conductivity type semiconductor materials, and forming the lower layer of second conductivity type semiconductor material in the groove close to the first side of the photovoltaic cell panel; s6, forming a third conductive type semiconductor material on the lower layer of the first conductive type semiconductor material and the lower layer of the second conductive type semiconductor material; s7, forming upper-layer first conductive type semiconductor materials, forming or not forming upper-layer second conductive type semiconductor materials between the upper-layer first conductive type semiconductor materials, and partially overlapping adjacent upper-layer first conductive type semiconductor materials and lower-layer first conductive type semiconductor materials, or partially overlapping adjacent upper-layer second conductive type semiconductor materials and lower-layer second conductive type semiconductor materials, forming an overlapping region, wherein the overlapping region forms an insulating region of the single-body thin-film photovoltaic cell, a region on the first side of the overlapping region forms a bypass shunt region of the single-body thin-film photovoltaic cell, and a region on the second side of the overlapping region forms a photovoltaic cell main region of the single-body thin-film photovoltaic cell; s8, cutting along one side of the groove, which is close to the photovoltaic cell main area of the single film photovoltaic cell, to form a transparent conductive film, so as to form a segmentation area; s9, forming an insulating side wall at the outer side edge of the edge monomer film photovoltaic cell; s10, forming a metal electrode layer, wherein the metal electrode layer covers the surfaces of the single thin film photovoltaic cell and the dividing areas;
and S11, forming a notch on the metal electrode layer of each single thin film photovoltaic cell.
The application also provides a manufacturing method of the photovoltaic cell panel, which comprises the following steps: s1, providing a substrate, and forming a conductive film on the substrate; s2, forming a lower layer of first-conductivity-type semiconductor material and a lower layer of second-conductivity-type semiconductor material on a part of the area of the conductive film, wherein the lower layer of first-conductivity-type semiconductor material and the lower layer of second-conductivity-type semiconductor material are adjacently arranged; s3, forming a third conductive type semiconductor material on the lower layer of the first conductive type semiconductor material and the lower layer of the second conductive type semiconductor material; s4, forming an upper first conductive type semiconductor material and an upper second conductive type semiconductor material, wherein the upper first conductive type semiconductor material and the upper second conductive type semiconductor material are adjacently arranged, and the adjacent upper second conductive type semiconductor material and the adjacent lower second conductive type semiconductor material are partially overlapped, or the adjacent upper first conductive type semiconductor material and the adjacent lower first conductive type semiconductor material are partially overlapped to form an overlapped area, wherein the overlapped area forms an insulating area of the single thin film photovoltaic cell, the area where the upper second conductive type semiconductor material and the lower second conductive type semiconductor material are positioned on the first side of the insulating area forms a bypass shunt area of the single thin film photovoltaic cell, and the area where the upper first conductive type semiconductor material and the lower first conductive type semiconductor material are positioned on the second side of the overlapped area forms a photovoltaic cell main area of the single thin film photovoltaic cell; s5, forming a transparent conductive film on the upper layer of the first conductive type semiconductor material and the upper layer of the second conductive type semiconductor material to form a first single film photovoltaic cell; s6, cutting the first side edge of the first single-body thin-film photovoltaic cell to the substrate to form a dividing region; s7, forming an insulating side wall in the dividing region; s8, forming a second conductive film on a partial area of the insulating side wall, which is far away from the conductive film on one side of the formed single film photovoltaic cell adjacent to the insulating side wall, and at least covering a bypass shunt area of the formed single film photovoltaic cell adjacent to the second conductive film; s9, sequentially performing steps S2 to S7 to form a second monomer film photovoltaic cell; and S10, sequentially performing the steps S8 and S9 for a plurality of times to form a plurality of single thin film photovoltaic cells.
Drawings
Fig. 1 is a schematic cross-sectional view of a monolithic thin film photovoltaic cell according to an embodiment of the invention.
Fig. 2 is a schematic perspective view of the monolithic thin film photovoltaic cell of fig. 1.
Fig. 3 is a schematic diagram of an equivalent circuit of the monolithic thin film photovoltaic cell of fig. 1.
Fig. 4 is a schematic diagram of a monolithic thin film photovoltaic cell according to an embodiment of the application.
Fig. 5 is a schematic diagram of a monolithic thin film photovoltaic cell according to another embodiment of the application.
Fig. 6 is a schematic view of a photovoltaic panel according to an embodiment of the present application.
Fig. 7 is an enlarged schematic view of details of a photovoltaic panel according to an embodiment of the present application.
Fig. 8 is an enlarged schematic view of a detail of a photovoltaic panel according to another embodiment of the present application.
Fig. 9 is a schematic diagram of the correspondence between the thermal diffusion length and the length of the single photovoltaic cell.
Fig. 10 is a schematic diagram of the distribution of the temperature rise condition of the photovoltaic cell panel after integrating six rows of bypass shunt regions, in the worst case, when all bypass shunt regions are turned on.
Fig. 11a to 11h are schematic views illustrating a manufacturing process of a photovoltaic cell panel according to an embodiment of the present application.
Fig. 12a to 12e are schematic views illustrating a manufacturing process of a photovoltaic cell panel according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present invention will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the invention are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In an embodiment of the present invention, a single thin film photovoltaic cell is provided, and please refer to a schematic cross-sectional view of the single thin film photovoltaic cell in an embodiment of the present invention shown in fig. 1. Please refer to the schematic perspective view of the single thin film photovoltaic cell of fig. 1 shown in fig. 2, and the schematic equivalent circuit of the single thin film photovoltaic cell of fig. 1 shown in fig. 3. The single thin film photovoltaic cell 100 includes:
The photovoltaic cell main region 110, as shown in fig. 1 and 2, is configured to receive light to generate current or voltage, and includes a positive terminal 111 and a negative terminal 112, where a diode D 1, that is, an illuminated diode, such as diode D 1 shown in fig. 3, is equivalent between the positive terminal 111 and the negative terminal 112 of the photovoltaic cell main region 110;
The bypass shunt region 120, as shown in fig. 1 and 2, comprises a positive electrode terminal 121 and a negative electrode terminal 122, and the diode D 2 is equivalent between the positive electrode terminal 121 and the negative electrode terminal 122 of the bypass shunt region 120, as shown in fig. 3, wherein the positive electrode terminal 121 of the bypass shunt region 120 and the negative electrode terminal 112 of the photovoltaic cell main region 110 are located on the first side 101 of the monolithic thin-film photovoltaic cell 100, and the negative electrode terminal 122 of the bypass shunt region 120 and the positive electrode terminal 111 of the photovoltaic cell main region 110 are located on the second side 102 of the monolithic thin-film photovoltaic cell 100, so that when the photovoltaic cell main region 110 is subjected to a negative bias voltage, the bypass shunt region 120 is subjected to the positive bias voltage, and gradually conducts when the positive bias voltage is greater than a threshold voltage, and current is prevented from passing through the photovoltaic cell main region 110 subjected to the negative bias voltage, that is equivalent to a diode which is not subjected to illumination between the positive electrode terminal 121 and the negative electrode terminal 122;
an insulating region 130, located between the photovoltaic cell main region 110 and the bypass shunt region 120, for isolating the photovoltaic cell main region 110 from the bypass shunt region 130, as shown in fig. 1 and 2, the photovoltaic cell main region 110, the insulating region 130, and the bypass shunt region 110 are sequentially arranged from right to left.
In this way, by integrating the bypass diode for bypassing the photo-generated region in each single thin film photovoltaic cell, each single thin film photovoltaic cell is precisely protected, instead of the conventional bypass diode protecting a series of single photovoltaic cells (so that the protection capability of the single photovoltaic cells is limited), and thus the negative bias borne by the single thin film photovoltaic cells is reduced as much as possible, and the device loss and the temperature rise caused by the negative bias are also reduced as much as possible, and because the bypass diode is integrated in the single thin film photovoltaic cells, the external connection wires are saved, the overall reliability is improved, the parasitic series resistance is reduced, the loss is reduced, the cost is also reduced, the photovoltaic technology compatibility is stronger, and the bypass shunt region and the insulation region can be formed in the process of preparing the photo-generated region, that is, the process is saved.
Referring to fig. 3, when the photovoltaic cell primary region 110 is illuminated, it produces a voltage or current output. When the main photovoltaic cell region 110 is shaded, the single thin film photovoltaic cell is negatively biased (and normally operated photovoltaic cell in series with it), the bypass shunt region 120 will be positively biased, and when the positive bias is greater than a threshold voltage, the diode D 2 between the positive terminal 121 and the negative terminal 122 of the bypass shunt region 120 is turned on, and the negative bias to which the main photovoltaic cell region is subjected will be limited to the on-voltage drop of the bypass shunt region, and the current of the on-voltage drop passes through the bypass shunt region 120 to avoid damage to the main photovoltaic cell region 110. Specifically, referring to fig. 3, the bypass shunt region 120 further includes a parasitic series resistor R s, and the on-state voltage drop includes a voltage drop across the parasitic series resistor R s and an on-state voltage drop of the equivalent diode D 2.
Referring to fig. 1, the photovoltaic cell main region 110 is visible light so that light can be received to generate a current or voltage. The bypass shunt region 120 is shielded from light, such as the bypass shunt region 120 of fig. 1, where light does not enter, but no current or voltage is generated, so as to fully realize the shunt function. When the bypass shunt region 120 is turned on by being subjected to a forward bias, the shunt function can be fully realized due to no self-generated photo-generated current or voltage, and the loss generated in the bypass shunt region 120 is reduced, so that the temperature of the single thin film photovoltaic cell is reduced, and the efficiency is further improved.
Furthermore, the monomer film photovoltaic cell uses materials such as light-transmitting glass, plastic, ceramic, graphite, metal sheets and the like with low price as a substrate, and forms layers such as an electrode, a film photovoltaic material absorption layer and the like through low-cost preparation processes such as mask evaporation, spin coating, printing and the like, so that the process is simple and the manufacturing cost is low. Common thin film photovoltaic cells include gallium arsenide thin film photovoltaic cells, amorphous silicon thin film photovoltaic cells, polycrystalline silicon thin film photovoltaic cells, cadmium telluride photovoltaic cells, perovskite material photovoltaic cells, copper indium selenium thin film photovoltaic cells, and the like. Specifically, the monomer film photovoltaic cell of the application takes perovskite material photovoltaic cells as examples, and comprises flexible perovskite photovoltaic cells and double-glass hard perovskite photovoltaic cells.
Specifically, in the actual preparation process of the single thin film photovoltaic cell of the present application, the bypass shunt region 120 and the insulating region 130 are formed simultaneously during the process of preparing the photovoltaic cell main region 110, that is, the formation process of the bypass shunt region 120 and the insulating region 130 is integrated in the formation process of the photovoltaic cell main region 110, instead of forming the bypass shunt region 120 and the insulating region 130 by using a separate process, so that the bypass diode can be integrated therein without increasing the formation process of the single thin film photovoltaic cell, thereby playing a role of bypassing the photovoltaic cell main region 110.
In the thin film photovoltaic cell of the present application, the insulating region 130 adopts a thin film absorption layer, such as a perovskite thin film absorption layer with a chemical structural formula of ABX, wherein a is selected from one of monovalent metal cations or organic cations, B is selected from one or two combinations of positive divalent metal cations, and X is selected from one or two combinations of halogen anions. The current in the insulating region 130 only flows laterally, and the thin film absorption layer is thin and the material has high resistivity, so that the lateral resistance of the insulating region 130 is large, that is, the parasitic impedances R sh1 and R sh2 of the insulating region 130 shown in fig. 3 are large enough, so that the insulating region 130 can occupy a small area, and the insulating purpose can be achieved. Taking a perovskite material photovoltaic cell as an example, the width of the insulating region 130 (i.e. r 2-r1 in fig. 1) is only required to be a few micrometers, specifically, the thickness is far greater than the thickness of the thin film absorption layer, taking a 500nm thick perovskite photovoltaic absorption layer as an example, considering the resistivity, the length of the insulating region 130 is usually more than 2.5 micrometers (5 times of 500 nm), preferably 10 times, that is, 5 micrometers, which is negligible for the overall size of the single thin film photovoltaic cell, so that a very good insulating effect can be achieved.
In practical applications, the insulating region 130 may or may not be light-shielded. If the insulating region is not shielded, a part of the photo-generated current becomes an output current, as shown in fig. 3, the part of the photo-generated current is identical to the photo-generated current in the main region of the photovoltaic cell, and the part of the photo-generated current is opposite to the photo-generated current in the main region of the photovoltaic cell, that is, the part of the photo-generated current becomes the output current, and the part of the photo-generated current passes through the bypass loss, but the insulating region is usually narrow, so that the influence is not caused too much, and the excessive incident light loss of the single thin film photovoltaic cell is not caused. If the insulating region is shielded from light, no current is generated.
The single thin film photovoltaic cells are mostly rectangular, i.e. the main area of the photovoltaic cell is a rectangular area, as shown in fig. 1 and 2. In practical applications, the insulating region 130 and the bypass region 120 may be long sides of the main photovoltaic cell region along the rectangular region, as shown in fig. 4, which is a schematic diagram of a single thin film photovoltaic cell according to an embodiment of the present application; the insulating region 130 and the bypass shunt region 120 may also be formed by a single thin film photovoltaic cell of another embodiment of the present application as shown in fig. 5 along the short sides of the main photovoltaic cell region of the rectangular region. In practical use, the solution shown in fig. 5 is preferably adopted for the convenience of manufacture and the optimization of the temperature of the bypass flow dividing region.
In practical applications, the parasitic series resistance R S of the shunt region 120 and the parasitic impedances R sh1 and R sh2 of the insulating region 130 cause losses, see fig. 3. It is desirable to have photovoltaic cells that are small and lightweight, so that the area of bypass shunt region 120 is minimized. In practical applications, while the area of the bypass shunt region 120 is reduced, it should be ensured that the parasitic series resistance R S is not greater than the value of the open circuit voltage V oc of the single thin film photovoltaic cell divided by the short circuit current I sc of the single thin film photovoltaic cell, so as to avoid the excessive temperature when the bypass shunt region 120 is turned on.
Still further, referring to fig. 1, the bypass shunt region 120 (which is shaded) and the insulating region 130 (whether shaded or not) both lose a portion of the photo-generated current area, and it is desirable to minimize such losses due to the integration of the bypass diode to increase the overall efficiency of the monolithic thin film photovoltaic cell. Preferably, the total area of the bypass shunt region 120 and the insulating region 130 should be controlled to be within 10% of the total area of the single thin film photovoltaic cell. As shown in fig. 1, the area of bypass shunt region 120 and insulating region 130 and the ratio of the area of the monolithic thin film photovoltaic cell can be represented by fl=r 2/L, which is 10% or less. More preferably, FL can be reduced to within 1%.
In practical application, the local resistivity of the bypass shunt area material can be reduced; reducing the local band gap width of the bypass shunt region material; changing one electrode of the bypass shunt area into Schottky contact; the local defect of the bypass shunt area material is increased, so that the negative bias voltage and related loss are reduced by means of reducing the conduction voltage of the bypass shunt area.
The application further provides a photovoltaic cell panel, and particularly relates to a schematic view of the photovoltaic cell panel in an embodiment of the application shown in fig. 6, and an enlarged schematic view of details of the photovoltaic cell panel in an embodiment of the application shown in fig. 7. The photovoltaic cell panel includes: a plurality of unit thin-film photovoltaic cells 100 as shown in fig. 1, and a plurality of unit thin-film photovoltaic cells 100 are connected in series and/or parallel, as shown in fig. 6, and a plurality of unit thin-film photovoltaic cells 100 are connected in series and/or parallel to provide a desired voltage and a desired current, wherein a bypass shunt region 120 of each unit thin-film photovoltaic cell 100 is disposed below a photovoltaic cell main region 110 of a unit thin-film photovoltaic cell 100 adjacent thereto. In addition, the whole (serial) long-strip battery is divided into a plurality of strings of short-strip batteries (the strings are connected in parallel), so that the influence of local defects or shading is reduced to the minimum. The shading from a leaf, for example, can affect an entire strip of photovoltaic cells before splitting, but splitting it into shorter strips, the effect will be limited to the short strip of photovoltaic cells, i.e., forming small-sized monolithic thin film photovoltaic cells.
As described above, by disposing bypass shunt region 120 of each single thin-film photovoltaic cell 100 below the single thin-film photovoltaic cell 100 adjacent thereto, it is possible to further avoid the loss of incident light due to the loss of the light absorption surface of the device, in addition to the advantages possessed by single thin-film photovoltaic cell 100. Since the active layers of thin film devices are typically very thin (on the order of microns or less), even hundreds of individual thin film photovoltaic cells stacked one upon the other do not create a significant thickness differential if a tight stacking scheme is employed. However, under some conditions, or for other considerations, it is also contemplated that adjacent monolithic thin film photovoltaic cells may be left void in the depth direction rather than in close proximity.
Still further, referring to the detailed enlarged schematic view of the photovoltaic panel of another embodiment of the present application shown in fig. 8, the bypass shunt region 120 and the insulation region 130 of each single thin-film photovoltaic cell 100 are disposed below the photovoltaic cell main region 110 of the adjacent single thin-film photovoltaic cell 100. Thereby ensuring that the incident light received by the photovoltaic cell panel almost completely enters the main photovoltaic cell area. The combination of the small-sized monolithic thin film photovoltaic cells and the photovoltaic panels shown in fig. 7 or 8 reduces the impact of localized performance degradation (e.g., localized shading, etc.) on overall efficiency.
Further, as shown in fig. 8, the bypass area 120 and the insulation area 130 of each single thin film photovoltaic cell 100 are located downward of the photovoltaic cell main area 110 of the adjacent single thin film photovoltaic cell 100, so as to reduce the volume and weight of the photovoltaic cell panel and maximize the area for effectively receiving the incident light. In the same manner as in fig. 7, a detailed description thereof will be omitted.
Of course, bypass shunt region 120 and/or insulating region 130 may not be located in the downward direction of adjacent single thin-film photovoltaic cells 100, i.e., single thin-film photovoltaic cells 100 are sequentially arranged, so that the manufacturing process is simple. Although there is a loss of incident light, the bypass region 120 and the insulating region 130 have a smaller area, and their influence is within an acceptable range.
As described above, the total area of the bypass shunt region 120 and the insulating region 130 should be controlled to be within 10% of the total area of the single thin film photovoltaic cell. The size of the monolithic thin film photovoltaic cell is thus correlated to the size of the bypass shunt region. Notably, the bypass shunt region 120 is required to avoid local excessive temperatures due to heat dissipation when the functional region is on during distribution of the single thin film photovoltaic cells. For this, we introduced the thermal diffusion length L th concept for the subsequent monolithic thin film photovoltaic cell size and bypass shunt region arrangement design, which is defined as: Wherein κ i is the thermal conductivity of each layer of material of the single thin film photovoltaic cell, w i is the thickness of each layer, and H is the heat transfer coefficient in the longitudinal direction (i.e. the direction perpendicular to the device face, generally referred to as the thickness direction of the single thin film photovoltaic cell), estimated as: h=30w/(m 2 ·k) (where, W is power unit watt, m 2 is area unit square meter, K is temperature unit kelvin), specifically measured experimentally, e.g., under light of 750 watts per square meter, a larger area plate made of the same material has its central region temperature raised by 25 degrees celsius under non-operating thermal equilibrium conditions, then h=30w/(m 2 ·k. It is desirable to ensure that any point of the potential heat dissipation zone (i.e., bypass shunt region 120) is less than Lth from the edge of the zone, by utilizing the edge heat dissipation effect to prevent localized excessive heating. From this, the approximate ideal length L (as in FIGS. 1, 4, 5 and 7) of the monolithic thin film photovoltaic cell can be determined to range from: l th/(1-FL)＜L＜2Lth/FL. According to the formula, the length range of a suitable monomer film photovoltaic cell can be expanded by increasing Lth. In practical applications, a layer of material with excellent heat transfer performance, such as graphene, may be added into the single thin film photovoltaic cell, or a heat sink may be attached to the bypass shunt region 120 to reduce the temperature rise during conduction, so as to increase L th. Assuming fl=10%, for photovoltaic panels of different composition, including flexible perovskite photovoltaic panels (corresponding to reference numeral 910 in fig. 9), dual glass hard perovskite photovoltaic panels (corresponding to reference numeral 920 in fig. 9), conventional silicon photovoltaic panels (corresponding to reference numeral 930 in fig. 9), and perovskite photovoltaic panels embedded with 50 μm graphene thermal conductive layers (corresponding to reference numeral 940 in fig. 9), typical L th values are 0.12cm, 1.3cm, 3.3cm and 4.8cm respectively, The length L of the corresponding ideal single thin film photovoltaic cell is shown as the vertical axis of FIG. 9, specifically, FIG. 9 is a schematic diagram showing the correspondence between the thermal diffusion length and the length of the single photovoltaic cell, wherein the abscissa is the thermal diffusion length, and the ordinate is the length of the single photovoltaic cell. For a photovoltaic cell panel with a length of about 2m and a width of 1.2m, if the photovoltaic cell panel is composed of a perovskite photovoltaic cell panel embedded with a graphene heat conduction layer of 50 μm, namely, L th =4.8cm, the cells are divided into 6 rows, the temperature rise of all bypass shunt areas 120 is also lower than 40 degrees when the bypass shunt areas are conducted due to negative bias, specifically, after the six rows of bypass shunt areas are integrated as shown in fig. 10, the distribution diagram of the temperature rise condition of the photovoltaic cell panel is shown in the worst case, namely, when all bypass shunt areas are conducted.
In practical applications, the distance between two adjacent bypass shunt areas is larger than the thermal diffusion length L th, and further, is far larger than the thermal diffusion length L th, that is, (1-FL) x L is far larger than L th, so that the bypass shunt areas are prevented from being excessively heated and diffusing to the photovoltaic cell main area. The width (length along the length direction of the single thin film photovoltaic cell) of the bypass shunt region can be set to be smaller than 2 times of the thermal diffusion length L th, and further, the thermal diffusion length L th which is far larger than 2 times of the thermal diffusion length L, namely FL x L is far smaller than 2L th, so that the temperature rise in the bypass shunt region is prevented from being too high when the bypass shunt region is conducted. Namely, better temperature control is realized by controlling the thermal distance of the heating part. The length refers to the length of a certain component or element in the arrangement direction of the main, insulating and bypass shunt regions of the photovoltaic cell, and the width refers to the length in the direction perpendicular to the length direction. Of course, there may be some error in the vertical direction.
In an embodiment of the present application, a method for manufacturing the photovoltaic panel shown in fig. 6 is also provided. Referring to fig. 11a to 11h, a schematic process of manufacturing a photovoltaic panel includes:
S1: providing a transparent substrate, such as reference numeral 801 of FIG. 11a, which may be a low cost clear glass, a transparent plastic (both rigid and flexible), etc.;
S2: forming a transparent conductive film 802 on a substrate 801, as shown in fig. 11a, the transparent conductive film 802 has both light-transmitting and conductive functions, such as Indium Tin Oxide (ITO), zinc indium oxide (indium zinc oxide, IZO), and the like;
S3: dividing the transparent conductive film 802 into N sections, and forming isolation grooves 803 between two adjacent transparent conductive films, wherein N is a positive integer greater than 1, as shown in fig. 11b, such as dividing by laser method;
s4, the material is not filled in the groove near the first side 821 of the photovoltaic cell panel, and the lower layer of the first conductive type semiconductor material 804 is formed on the partial area of the transparent conductive film near the first side 821 of the photovoltaic cell panel, and the lower layer of the first conductive type semiconductor material 804 is formed in the remaining groove 803 and on the partial area of the transparent conductive film at both sides of the groove, as shown in fig. 11 c. Specifically, a mask plate or a deposition and etching process can be adopted to form a lower layer of the first conductive type semiconductor material;
S5, forming an underlying second conductivity type semiconductor material 805 between the underlying first conductivity type semiconductor material 804, as shown in fig. 11d, forming an underlying second conductivity type semiconductor material 805 in the recess adjacent to the photovoltaic panel first side 821. Likewise, a mask or a deposition and etching process may be employed to form the underlying second conductivity type semiconductor material;
s6, forming a third conductive type semiconductor material 806, which can be an intrinsic (i-type) semiconductor or a lightly doped semiconductor, as a photovoltaic cell absorption layer, as a main light absorption material capable of generating photo-generated current under illumination conditions, on the underlying first conductive type semiconductor material 804 and the underlying second conductive type semiconductor material 805, as shown in FIG. 11 e;
And S7, forming an upper layer of a first conductive type semiconductor material 807, forming an upper layer of a second conductive type semiconductor material 808 between the upper layer of the first conductive type semiconductor material 807, and partially overlapping between adjacent upper layer of the first conductive type semiconductor material 807 and the lower layer of the first conductive type semiconductor material 804, or partially overlapping between adjacent upper layer of the second conductive type semiconductor material 808 and the lower layer of the second conductive type semiconductor material 805, and forming an overlapping region 809 by partially overlapping between the upper layer of the first conductive type semiconductor material 807 and the lower layer of the first conductive type semiconductor material 804 as shown in FIG. 11 f. Specifically, as shown in fig. 11f, when the adjacent upper layer of the first conductive type semiconductor material 807 and the lower layer of the first conductive type semiconductor material 804 are partially overlapped, the adjacent upper layer of the second conductive type semiconductor material 808 and the lower layer of the second conductive type semiconductor material 805 are dislocated from each other, and vice versa. Wherein the overlap region 809 constitutes an insulating region of the monolithic thin film photovoltaic cell, and the upper layer of the first conductivity type semiconductor material 807 and the lower layer of the first conductivity type semiconductor material 804 on one side of the insulating region are smaller in width than on the other side of the insulating region. As shown in fig. 11f, the widths of the upper layer first conductive type semiconductor material 807 and the lower layer first conductive type semiconductor material 804 on the first side of the overlapping region 809 are smaller than the widths of the upper layer first conductive type semiconductor material 807 and the lower layer first conductive type semiconductor material 804 on the second side of the overlapping region 809, so that the regions where the upper layer first conductive type semiconductor material 807 and the lower layer first conductive type semiconductor material 804 are located on the first side of the overlapping region 809 constitute the bypass shunt region of the single thin film photovoltaic cell, and the regions where the upper layer first conductive type semiconductor material 807 and the lower layer first conductive type semiconductor material 804 are located on the second side of the overlapping region 809 constitute the photovoltaic cell main region of the single thin film photovoltaic cell;
And S8, performing a cutting process along one side of the groove 803, which is close to the photovoltaic cell main area of the single-film photovoltaic cell, to cut the transparent conductive film 802 (the transparent conductive film 802 is reserved) so as to form a divided area 810, as shown in FIG. 11g. The cutting can be performed by a laser process, and any other cutting process can be adopted;
S9, forming an insulating side wall 812 at the outer side edge of the edge single film photovoltaic cell, wherein the edge single film photovoltaic cell refers to a single film photovoltaic cell positioned at the edge of the photovoltaic cell panel, and the outer side edge of the single film photovoltaic cell refers to a side surface close to the edge of the photovoltaic cell panel as shown in FIG. 11 h;
S10, a metal electrode layer 813 is formed, and the metal electrode layer 813 covers the surface of the single thin film photovoltaic cell and the divided regions 810, as shown in fig. 11 h. The metal electrode layer 813 can be formed by evaporation or the like. In one embodiment, the metal electrode layer 813 is an ultra-thin metal electrode;
S11, a notch 814 is formed on the metal electrode layer of each single thin-film photovoltaic cell, as shown in fig. 11h, in one embodiment, the notch 814 is close to the groove 803 of the adjacent single thin-film photovoltaic cell to reduce the loss.
Thus, a plurality of single thin film photovoltaic cells are formed in sequence, and as shown in fig. 11h, six single thin film photovoltaic cells are formed on one photovoltaic cell panel.
Further, the manufacturing process of the photovoltaic cell panel further includes S12, forming a light shielding material 815 on the area on the substrate 801 corresponding to the bypass shunt area, as shown in FIG. 11h, to prevent the photo-generated current of the bypass shunt area from reversing the normal bypass current to affect the bypass effect. And materials with excellent heat conduction properties similar to graphene and the like can be added to improve the heat dissipation effect of the bypass shunt area.
In one embodiment, when the upper and lower first conductivity type semiconductor materials are N-type semiconductors or electron transport layers, the upper and lower second conductivity type semiconductor materials are P-type semiconductors or hole transport layers; when the upper and lower first conductive type semiconductor materials are P-type semiconductors or hole transport layers, the upper and lower second conductive type semiconductor materials are N-type semiconductors or electron transport layers. The N-type semiconductor may be various applicable N-type semiconductors, and the P-type semiconductor may be various applicable P-type semiconductors.
In one embodiment, the dicing process in S8 should retain at least a portion of the semiconductor material within the grooves 803 such that the semiconductor material within the grooves 803 forms a small electric field that prevents current from flowing along the transparent conductive film 802 between two adjacent monolithic thin film photovoltaic cells.
In an embodiment, the upper layer of the second conductivity type semiconductor material 808 may not be formed in S7, so that the metal electrode layer 813 formed later directly contacts the third conductivity type semiconductor material 806, and a schottky junction is formed in the bypass shunt region.
In an embodiment, S7 or S8 further includes S71: a cutting process is performed on both side edges of the photovoltaic panel up to the transparent conductive film 802 to form a positive electrode V + and a negative electrode V - of the photovoltaic panel, as shown in fig. 11 h.
In actual manufacture, the bypass shunt area of each single thin film photovoltaic cell should be made close to the edge of the photovoltaic cell panel so that heat generated when it is in the bypass state is dissipated from the edge of the photovoltaic cell panel as soon as possible. As shown in fig. 11h, the areas near the photovoltaic panel first side 821 and second side 822 are bypass shunt areas of the monolithic thin film photovoltaic cell.
In an embodiment of the present application, a method for manufacturing the photovoltaic panel shown in fig. 7 is also provided. Referring to fig. 12a to 12e, a schematic process for manufacturing a photovoltaic panel includes:
S1, providing a substrate 901, and forming a conductive film 902 on the substrate 901, as shown in fig. 12 a. The conductive film may be a metal or the like;
S2, forming a lower layer of a first conductivity type semiconductor material 903 and a lower layer of a second conductivity type semiconductor material 904 on a partial region of the conductive film 902, wherein the lower layer of the first conductivity type semiconductor material 903 is arranged adjacent to the lower layer of the second conductivity type semiconductor material 904, as shown in fig. 12 b. A mask plate or a deposition and etching process can be adopted to form the semiconductor material;
S3 forming a third conductivity type semiconductor material 905, which may be an intrinsic (i-type) semiconductor or a lightly doped semiconductor, as an absorber layer of a photovoltaic cell, on the underlying first conductivity type semiconductor material 903 and the underlying second conductivity type semiconductor material 904, as shown in fig. 12 b;
S4, forming an upper layer first conductive type semiconductor material 907 and an upper layer second conductive type semiconductor material 906, wherein the upper layer first conductive type semiconductor material 907 is arranged adjacent to the upper layer second conductive type semiconductor material 906, and the adjacent upper layer second conductive type semiconductor material 906 is partially overlapped with the lower layer second conductive type semiconductor material 904, or the adjacent upper layer first conductive type semiconductor material 907 is partially overlapped with the lower layer first conductive type semiconductor material 903, and the overlapping region 910 is formed by partially overlapping the upper layer second conductive type semiconductor material 906 and the lower layer second conductive type semiconductor material 904 as shown in fig. 12 b. Specifically, as shown in fig. 12b, when the adjacent upper layer of the second conductive type semiconductor material 906 and the lower layer of the second conductive type semiconductor material 904 are partially overlapped with each other, the adjacent upper layer of the first conductive type semiconductor material 907 and the lower layer of the first conductive type semiconductor material 903 are dislocated from each other, and vice versa. Wherein the overlap region 910 constitutes an insulating region of the monolithic thin film photovoltaic cell, and the upper layer of second conductivity type semiconductor material 906 and the lower layer of second conductivity type semiconductor material 904 on one side of the insulating region are smaller in width than on the other side of the insulating region. As shown in fig. 12b, the widths of the upper layer second conductivity type semiconductor material 906 and the lower layer second conductivity type semiconductor material 904 on the first side 911 of the overlap region 910 are smaller than the widths of the upper layer second conductivity type semiconductor material 906 and the lower layer second conductivity type semiconductor material 904 on the second side 809 of the overlap region 910, so that the regions where the upper layer second conductivity type semiconductor material 906 and the lower layer second conductivity type semiconductor material 904 are located on the first side 910 constitute the bypass shunt region of the single thin film photovoltaic cell, and the regions where the upper layer first conductivity type semiconductor material 907 and the lower layer first conductivity type semiconductor material 903 are located on the second side 912 of the overlap region 910 constitute the photovoltaic cell main region of the single thin film photovoltaic cell;
s5, forming a transparent conductive film 908 on the upper layer first conductive type semiconductor material 907 and the upper layer second conductive type semiconductor material 906 to form a first single thin film photovoltaic cell, as shown in FIG. 12b, wherein the transparent conductive film 908 is the same as the transparent conductive film 802 in FIG. 11a, and will not be repeated here;
and S6, performing a cutting process on the first side 911 side of the first single thin-film photovoltaic cell, and cutting the first side 911 side of the first single thin-film photovoltaic cell to the substrate 901 to form a division region 908, as shown in FIG. 12c. The cutting can be performed by a laser process, and any other cutting process can be adopted;
s7, forming an insulating side wall 909 in the dividing region 908, as shown in FIG. 12 d;
S8, forming a second conductive film 921 on a partial area of the conductive film 902 on one side of the insulating side wall 909, which is far away from the formed single-film photovoltaic cell (such as single-film photovoltaic cell 1#), and covering at least a bypass shunt area of the formed single-film photovoltaic cell adjacent to the second conductive film 921;
s9, sequentially performing steps S2 to S7 to form a second single thin film photovoltaic cell, wherein the single thin film photovoltaic cell 2# is shown in FIG. 12 e;
and S10, sequentially performing steps S8 and S9 for a plurality of times to form a plurality of single thin film photovoltaic cells, such as a single thin film photovoltaic cell 3#, a single thin film photovoltaic cell 4#, and the like shown in FIG. 12 e.
The method of manufacturing a photovoltaic panel of the present application further comprises forming a fourth monolithic thin film photovoltaic cell, monolithic thin film photovoltaic cell # 4 as shown in fig. 12 e. Of course, more single thin film photovoltaic cells can be formed by adopting the method according to the requirements of the photovoltaic cell panel, and the bypass shunt area of each single thin film photovoltaic cell is positioned below the adjacent single thin film photovoltaic cells, so that the incident light loss caused by the light absorption surface loss of the device can be avoided.
In an embodiment, step S8 further includes: a fill material 913 is formed on a side of the insulating sidewall 909 remote from the formed monolithic thin film photovoltaic cell adjacent thereto (e.g., monolithic thin film photovoltaic cell 1 #), a second conductive film 921 is formed on a partial region of the fill material 913, and the second conductive film 921 covers at least the bypass shunt region of the formed monolithic thin film photovoltaic cell adjacent thereto. As shown in fig. 12e for the filler material 913. Since the active layers of thin film devices are typically very thin (on the order of microns or less), even hundreds of individual thin film photovoltaic cells stacked one upon the other do not create a significant thickness differential. Of course, the filling material 913 may not be formed, and even if the filling material 913 is not formed, the single thin film photovoltaic cell formed later is only slightly deformed, and the performance of the photovoltaic panel is not affected.
In one embodiment, the conductive film 921 further covers the insulating region of the formed single thin film photovoltaic cell adjacent thereto in step S9 to further avoid the loss of incident light due to the loss of the light absorption surface of the device.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (14)
1. A monolithic thin film photovoltaic cell, comprising:
The photovoltaic cell main area is used for receiving light to generate current or voltage and comprises a positive electrode end and a negative electrode end, and a diode is equivalently arranged between the positive electrode end and the negative electrode end of the photovoltaic cell main area;
The bypass shunt area comprises a positive electrode end and a negative electrode end, a diode is equivalently arranged between the positive electrode end and the negative electrode end of the bypass shunt area, the positive electrode end of the bypass shunt area and the negative electrode end of the photovoltaic cell main area are positioned on the first side of the single thin film photovoltaic cell, and the negative electrode end of the bypass shunt area and the positive electrode end of the photovoltaic cell main area are positioned on the second side of the single thin film photovoltaic cell, so that when the photovoltaic cell main area is subjected to negative bias, the bypass shunt area is subjected to positive bias;
an insulating region between the main photovoltaic cell region and the bypass shunt region for isolating the main photovoltaic cell region from the bypass shunt region, wherein
The length L of the monomer thin film photovoltaic cell ranges from: l th/(1-FL)＜L＜2Lth/FL, wherein FL is the area of the bypass shunt region and the insulating region and the proportion of the area of the single thin film photovoltaic cell, L th is the heat diffusion length,Kappa i is the thermal conductivity of each layer of material of the single thin film photovoltaic cell, w i is the thickness of each layer of the single thin film photovoltaic cell, and H is the longitudinal heat transfer coefficient.
2. The monolithic thin-film photovoltaic cell of claim 1, wherein when the main photovoltaic cell region is negatively biased and the bypass shunt region is positively biased to conduct, the negative bias experienced by the main photovoltaic cell region is limited to the conduction voltage drop of the bypass shunt region and the reduced conduction current passes through the bypass shunt region to avoid damage to the main photovoltaic cell region.
3. The monolithic thin-film photovoltaic cell of claim 1, wherein the photovoltaic cell main region is visible light and the bypass shunt region is opaque.
4. The single thin-film photovoltaic cell of claim 1, wherein the insulating region employs a thin-film absorber layer, and wherein the insulating region has a length in the direction of arrangement of the photovoltaic cell main region, insulating region, and bypass shunt region that is substantially greater than the thickness of the thin-film absorber layer.
5. The monolithic thin-film photovoltaic cell of claim 1, wherein the photovoltaic cell main region is a rectangular region, and the insulating region and the bypass shunt region are located in sequence on a broadside side of the photovoltaic cell main region.
6. The monolithic thin-film photovoltaic cell of claim 1, wherein the parasitic series resistance of the bypass shunt region is no greater than the open circuit voltage of the monolithic thin-film photovoltaic cell divided by the short circuit current of the monolithic thin-film photovoltaic cell.
7. The monolithic thin-film photovoltaic cell of claim 1 or 6, wherein the area sum of the bypass shunt region and the insulating region is controlled to be within 10% of the total area of the monolithic thin-film photovoltaic cell.
8. A photovoltaic panel, comprising:
the plurality of monolithic thin-film photovoltaic cells of claim 1, wherein the plurality of monolithic thin-film photovoltaic cells are connected in series and/or parallel, wherein the bypass shunt region of each monolithic thin-film photovoltaic cell is disposed below the photovoltaic cell primary region of the monolithic thin-film photovoltaic cell adjacent thereto.
9. The photovoltaic cell panel of claim 8, wherein the bypass shunt region and the insulating region of each unitary thin-film photovoltaic cell are disposed below the photovoltaic cell main region of the unitary thin-film photovoltaic cell adjacent thereto.
10. The photovoltaic panel of claim 8, wherein the spacing between adjacent rows of bypass shunt regions is substantially greater than the thermal diffusion length L th,Wherein kappa i is the heat conductivity of each layer of material of the single thin film photovoltaic cell, w i is the thickness of each layer of the single thin film photovoltaic cell, and H is the longitudinal heat transfer coefficient.
11. The photovoltaic panel of claim 8, wherein the bypass flow distribution region has a width less than 2 times the thermal diffusion length L th,Wherein kappa i is the heat conductivity of each layer of material of the single thin film photovoltaic cell, w i is the thickness of each layer of the single thin film photovoltaic cell, and H is the longitudinal heat transfer coefficient.
12. The method of manufacturing a monolithic thin film photovoltaic cell of claim 1, wherein the bypass shunt region and the insulating region are formed simultaneously during the process of preparing the main region of the photovoltaic cell.
13. A method of manufacturing a photovoltaic panel formed from the monolithic thin film photovoltaic cell of claim 1, comprising:
S1, providing a transparent substrate;
s2, forming a transparent conductive film on a substrate;
S3, dividing the transparent conductive film into N sections, and forming isolation grooves between two adjacent sections of transparent conductive films, wherein N is a positive integer greater than 1;
S4, not filling materials in the grooves close to the first side of the photovoltaic cell panel, forming a lower layer of first conductive type semiconductor material on a partial area of the transparent conductive film close to the first side of the photovoltaic cell panel, and forming a lower layer of first conductive type semiconductor material in the rest grooves and on partial areas of the transparent conductive film on two sides of the grooves;
S5, forming a lower layer of second conductivity type semiconductor material between the lower layer of first conductivity type semiconductor materials, and forming the lower layer of second conductivity type semiconductor material in the groove close to the first side of the photovoltaic cell panel;
S6, forming a third conductive type semiconductor material on the lower layer of the first conductive type semiconductor material and the lower layer of the second conductive type semiconductor material;
s7, forming upper-layer first conductive type semiconductor materials, forming or not forming upper-layer second conductive type semiconductor materials between the upper-layer first conductive type semiconductor materials, and partially overlapping adjacent upper-layer first conductive type semiconductor materials and lower-layer first conductive type semiconductor materials, or partially overlapping adjacent upper-layer second conductive type semiconductor materials and lower-layer second conductive type semiconductor materials, forming an overlapping region, wherein the overlapping region forms an insulating region of the single-body thin-film photovoltaic cell, a region on the first side of the overlapping region forms a bypass shunt region of the single-body thin-film photovoltaic cell, and a region on the second side of the overlapping region forms a photovoltaic cell main region of the single-body thin-film photovoltaic cell;
S8, cutting along one side of the groove, which is close to the photovoltaic cell main area of the single film photovoltaic cell, to form a transparent conductive film, so as to form a segmentation area;
s9, forming an insulating side wall at the outer side edge of the edge monomer film photovoltaic cell;
s10, forming a metal electrode layer, wherein the metal electrode layer covers the surfaces of the single thin film photovoltaic cell and the dividing areas;
and S11, forming a notch on the metal electrode layer of each single thin film photovoltaic cell.
14. The method for manufacturing a photovoltaic cell panel according to claim 8, comprising:
S1, providing a substrate, and forming a conductive film on the substrate;
S2, forming a lower layer of first-conductivity-type semiconductor material and a lower layer of second-conductivity-type semiconductor material on a part of the area of the conductive film, wherein the lower layer of first-conductivity-type semiconductor material and the lower layer of second-conductivity-type semiconductor material are adjacently arranged;
S3, forming a third conductive type semiconductor material on the lower layer of the first conductive type semiconductor material and the lower layer of the second conductive type semiconductor material;
S4, forming an upper first conductive type semiconductor material and an upper second conductive type semiconductor material, wherein the upper first conductive type semiconductor material and the upper second conductive type semiconductor material are adjacently arranged, and the adjacent upper second conductive type semiconductor material and the adjacent lower second conductive type semiconductor material are partially overlapped, or the adjacent upper first conductive type semiconductor material and the adjacent lower first conductive type semiconductor material are partially overlapped to form an overlapped area, wherein the overlapped area forms an insulating area of the single thin film photovoltaic cell, the area where the upper second conductive type semiconductor material and the lower second conductive type semiconductor material are positioned on the first side of the insulating area forms a bypass shunt area of the single thin film photovoltaic cell, and the area where the upper first conductive type semiconductor material and the lower first conductive type semiconductor material are positioned on the second side of the overlapped area forms a photovoltaic cell main area of the single thin film photovoltaic cell;
S5, forming a transparent conductive film on the upper layer of the first conductive type semiconductor material and the upper layer of the second conductive type semiconductor material to form a first single film photovoltaic cell;
s6, cutting the first side edge of the first single-body thin-film photovoltaic cell to the substrate to form a dividing region;
s7, forming an insulating side wall in the dividing region;
s8, forming a second conductive film on a partial area of the insulating side wall, which is far away from the conductive film on one side of the formed single film photovoltaic cell adjacent to the insulating side wall, and at least covering a bypass shunt area of the formed single film photovoltaic cell adjacent to the second conductive film;
S9, sequentially performing steps S2 to S7 to form a second monomer film photovoltaic cell;
And S10, sequentially performing the steps S8 and S9 for a plurality of times to form a plurality of single thin film photovoltaic cells.
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| CN105489700B (en) * | 2015-12-03 | 2017-06-27 | 中国电子科技集团公司第十八研究所 | A kind of preparation method of the solar cell with integrated diode |
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