CN115083890A

CN115083890A - Substrate processing apparatus and substrate processing method

Info

Publication number: CN115083890A
Application number: CN202210196093.4A
Authority: CN
Inventors: 福冈哲夫
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2021-03-12
Filing date: 2022-03-01
Publication date: 2022-09-20
Also published as: TW202301488A; JP2022139827A; KR20220128303A

Abstract

The substrate processing apparatus and the substrate processing method of the present invention can form a processing film having a uniform film thickness on a substrate. The substrate processing apparatus of the present invention for forming a processing film on a surface of a substrate includes: a spin chuck (21) as a substrate holding section for holding a substrate to which a processing liquid before drying for forming a processing film is applied; and a gas supply unit (40) for supplying a1 st gas (F1) having a1 st temperature higher than the normal temperature to the peripheral edge portion of the surface of the substrate held by the substrate holding unit.

Description

Substrate processing apparatus and substrate processing method

Technical Field

The present invention relates to a substrate processing apparatus and a substrate processing method.

Background

Patent document 1 describes that a solvent of a coating liquid is supplied to a convex portion of a coating film formed on a peripheral edge portion of a surface of a substrate to remove the convex portion.

Documents of the prior art

Patent document

Patent document 1: japanese patent laid-open No. 2020-181855

Disclosure of Invention

Technical problem to be solved by the invention

The invention provides a technique for forming a process film having a uniform film thickness on a substrate.

Technical solution for solving technical problem

A substrate processing apparatus according to an aspect of the present invention is a substrate processing apparatus for forming a processing film on a surface of a substrate, including: a substrate holding section for holding a substrate to which a treatment liquid before drying for forming the treatment film is applied; and a gas supply unit including a1 st nozzle unit, wherein the 1 st nozzle unit supplies a1 st gas having a1 st temperature higher than a normal temperature to a peripheral portion of the surface of the substrate held by the substrate holding unit.

Effects of the invention

According to the present invention, a technique for forming a process film having a uniform film thickness on a substrate can be provided.

Drawings

Fig. 1 is a perspective view showing an example of a substrate processing system.

Fig. 2 is a side view schematically showing an example of the inside of the substrate processing system.

Fig. 3 is a schematic diagram showing an example of the coating unit.

Fig. 4 is a schematic diagram showing an example of a gas supply nozzle of the coating unit.

Fig. 5 (a) and 5 (b) are schematic views showing an example of the opening of the gas supply nozzle.

Fig. 6 is a schematic diagram showing an example of the control of the gas supply unit by the control device.

Fig. 7 is a block diagram showing an example of the hardware configuration of the control device.

Fig. 8 is a flowchart showing an example of a substrate processing method.

Fig. 9 (a) is a diagram showing an example of a state of formation of the bump, and fig. 9 (b) is a diagram showing an example of a result of the processing performed by the coating unit.

Fig. 10 (a) and 10 (b) are views showing an example of a modification of the coating unit.

Fig. 11 is a diagram showing an example of a modification of the coating means.

Fig. 12 is a diagram showing an example of a modification of the coating means.

Description of the reference numerals

1 … … substrate processing system, 2 … … coating and developing device, 3 … … exposure device, 11 to 14 … … processing modules, 21 … … spin chuck, 22 … … rotation driving part, 26 … … cup-shaped body, 26a … … upper end, 31 … … processing liquid supply part, 40 … … gas supply part, 41 … … 1 st gas supply part, 41a … … nozzle, 41b … … piping, 41c … … temperature adjusting part, 41d … … on-off valve, 42 … … nd 2 gas supply part, 42a … … nozzle, 42b … … piping, 42c … … temperature adjusting part, 42d … …, 45 … … gas supply source, 46 … … piping, 47 on-off valve 47 … … temperature adjusting part, 48 … …, 50X … … gas supply nozzle, 51 … … main body part, 52a to 52d … … nozzle part, 80 … … conveying mechanism, 100 … … control device.

Detailed Description

Various exemplary embodiments will be described below.

In one exemplary embodiment, a substrate processing apparatus is a substrate processing apparatus for forming a processing film on a surface of a substrate, including: a substrate holding section for holding a substrate to which a treatment liquid before drying for forming the treatment film is applied; and a gas supply unit including a1 st nozzle unit, wherein the 1 st nozzle unit supplies a1 st gas having a1 st temperature higher than a normal temperature to a peripheral portion of the surface of the substrate held by the substrate holding unit.

According to the substrate processing apparatus, the 1 st gas having the 1 st temperature higher than the normal temperature is supplied to the peripheral portion of the surface of the substrate held by the substrate holding portion. By supplying the 1 st gas, the processing liquid in the peripheral portion of the substrate is dried in a state where the processing liquid is in contact with the 1 st gas, and therefore, the formation of the bump in the peripheral portion can be suppressed. Therefore, a process film having a uniform film thickness can be formed on the substrate.

The gas supply unit may intermittently supply the 1 st gas to each position of the peripheral edge portion of the substrate.

By intermittently supplying the 1 st gas, the formation of the projection at the peripheral edge portion can be further suppressed, and a process film having a more uniform film thickness can be formed on the substrate.

The 1 st nozzle may supply the 1 st gas to the peripheral portion of the substrate from above the peripheral portion of the substrate.

By supplying the 1 st gas to the peripheral portion from above the peripheral portion by the 1 st nozzle portion, the formation of the projection on the peripheral portion can be further suppressed, and a process film having a more uniform thickness can be formed on the substrate.

The gas supply unit may alternately supply the 1 st gas and the 2 nd gas having a 2 nd temperature lower than the 1 st temperature to respective positions on the peripheral edge portion of the substrate.

By alternately supplying the 1 st gas and the 2 nd gas having the 2 nd temperature lower than the 1 st temperature to each position of the peripheral portion, the drying rate of the processing liquid at the peripheral portion can be adjusted, and the formation of the projection at the peripheral portion can be suppressed, so that a processing film having a more uniform film thickness can be formed on the substrate.

The gas supply unit may simultaneously supply the 1 st gas and the 2 nd gas to different positions on the surface of the substrate.

The gas supply section can simultaneously supply the 1 st gas and the 2 nd gas to mutually different positions of the surface of the substrate, whereby the 1 st gas and the 2 nd gas can be quickly supplied to the respective positions of the substrate.

The gas supply unit may further include a 2 nd nozzle unit provided above a peripheral edge portion of the substrate and configured to supply the 2 nd gas.

By additionally providing the 2 nd nozzle unit, the 1 st gas and the 2 nd gas can be independently supplied.

The substrate may have a plurality of the 1 st nozzle portions and a plurality of the 2 nd nozzle portions, and the 1 st nozzle portions and the 2 nd nozzle portions may be alternately arranged along a peripheral portion of the substrate above the peripheral portion.

When the 1 st nozzle portion and the 2 nd nozzle portion are alternately arranged along the peripheral edge portion above the peripheral edge portion of the substrate, the 1 st gas and the 2 nd gas can be alternately supplied in a simple manner. For example, by relatively moving the substrate in the extending direction of the peripheral edge portion, the 1 st gas and the 2 nd gas can be alternately supplied to each position of the peripheral edge portion.

The following modes can be adopted, including: a1 st pipe for supplying the 1 st gas to the 1 st nozzle; a1 st temperature adjusting unit that adjusts the temperature of the gas flowing through the 1 st pipe to the 1 st temperature; a 2 nd pipe for supplying the 2 nd gas to the 2 nd nozzle portion; and a 2 nd temperature adjusting unit that adjusts the gas flowing through the 2 nd pipe to the 2 nd temperature.

By adopting the above-described manner, the temperature adjustment of the 1 st gas and the 2 nd gas can be independently performed.

The 1 st nozzle unit may alternately supply the 1 st gas and the 2 nd gas to the surface of the substrate.

By adopting the above-described configuration, the 1 st gas and the 2 nd gas can be alternately supplied from one nozzle portion, and the 1 st gas and the 2 nd gas can be supplied to each position of the substrate by one nozzle.

The following modes can be adopted, including: a pipe for supplying the gas to the 1 st nozzle; and a temperature adjusting unit that adjusts a temperature of the gas supplied from the 1 st nozzle unit to the substrate, wherein the temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching a temperature of the gas flowing through the pipe between the 1 st temperature and the 2 nd temperature.

By adopting the above-described configuration, the 1 st gas and the 2 nd gas can be prepared and supplied by temperature adjustment by one temperature adjustment unit.

The temperature adjusting unit may switch the temperature of the gas flowing through the pipe between the 1 st temperature and the 2 nd temperature by switching between an on state and an off state of a power supply of a heater that heats the gas flowing through the pipe.

In addition, the temperature adjusting unit may change the setting of a heater that heats the gas flowing through the pipe to switch the temperature of the gas flowing through the pipe between the 1 st temperature and the 2 nd temperature.

The following modes can be adopted, including: a1 st pipe for supplying the 1 st gas to the 1 st nozzle part; a 2 nd pipe for supplying the 2 nd gas to the 1 st nozzle part; and a temperature adjusting unit that adjusts a temperature of the gas supplied from the 1 st nozzle unit to the substrate, wherein the temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching a pipe that supplies the gas to the 1 st nozzle unit between the 1 st pipe and the 2 nd pipe.

By adopting the above-described configuration, the switching between the 1 st gas and the 2 nd gas can be performed quickly only by switching the pipe for supplying the gas to the 1 st nozzle portion.

The substrate holding unit may be a rotation mechanism that horizontally rotates the substrate while attracting the substrate.

Further, the substrate holding unit may further include a cup-shaped body disposed around the substrate holding unit so as to surround the substrate supported by the substrate holding unit, and the gas supply unit may supply the 1 st gas to a peripheral edge portion of the surface of the substrate through a supply port attached to the cup-shaped body.

In addition, the substrate holding section may be a conveying mechanism for conveying the substrate in a horizontal direction.

In one exemplary embodiment, a substrate processing method is a substrate processing method for forming a processing film on a surface of a substrate, and includes a process of supplying a1 st gas having a temperature higher than a normal temperature to a peripheral portion of the surface of the substrate, wherein a processing liquid before drying is applied to the substrate to form the processing film.

According to the substrate processing method, the 1 st gas having the 1 st temperature higher than the normal temperature is supplied to the peripheral portion of the surface of the substrate. By supplying the 1 st gas, the processing liquid in the peripheral portion of the substrate is dried in a state where the processing liquid is in contact with the 1 st gas, and therefore, the formation of the bump in the peripheral portion can be suppressed. Therefore, a process film having a uniform film thickness can be formed on the substrate.

Hereinafter, various exemplary embodiments will be described in detail with reference to the drawings. In addition, in the drawings, the same or corresponding portions are denoted by the same reference numerals.

[ substrate processing System ]

The substrate processing system 1 shown in fig. 1 is a system for forming a photosensitive coating film on a workpiece W, exposing the photosensitive coating film, and developing the photosensitive coating film. The workpiece W to be processed is, for example, a substrate or a substrate in a state where a film, a circuit, or the like is formed by performing a predetermined process. As an example of the substrate included in the workpiece W, there is a silicon-containing wafer. The workpiece W (substrate) may be formed in a circular shape. The workpiece W to be processed may be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or the like, or may be an intermediate obtained by subjecting such a substrate or the like to a predetermined process. The photosensitive coating film is, for example, a resist film.

The substrate processing system 1 includes a coating and developing apparatus 2, an exposure apparatus 3, and a control apparatus 100 (control unit). The exposure device 3 is a device that exposes a resist film (photosensitive coating film) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the portion of the resist film to be exposed with an energy ray by a method such as liquid immersion exposure. The coating and developing apparatus 2 performs a process of coating a resist (a processing liquid) on the surface of the workpiece W to form a resist film before the exposure process by the exposure apparatus 3, and performs a developing process of the resist film after the exposure process.

(substrate processing apparatus)

Hereinafter, the configuration of the coating and developing apparatus 2 will be described as an example of the substrate processing apparatus. As shown in fig. 1 and 2, the coating and developing apparatus 2 includes a carrier block 4, a process block 5, and an interface block 6.

The carrier block 4 guides the work W into the coating and developing apparatus 2 and guides the work W out of the coating and developing apparatus 2. For example, the carrier block 4 can support a plurality of carriers C for the workpiece W, and has a built-in conveying device a1 including a transfer arm. The carrier C accommodates a plurality of circular workpieces W, for example. The transfer device a1 takes out the workpiece W from the carrier C and delivers it to the processing block 5, and receives the workpiece W from the processing block 5 and returns it into the carrier C. The processing block 5 has a plurality of

processing modules

11, 12, 13, 14.

The processing module 11 incorporates a coating unit U1, a heat treatment unit U2, and a transfer device A3 that transfers the work W to these units. The process module 11 forms an underlying film on the surface of the workpiece W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 coats the treatment liquid for forming the lower layer film on the work W. The heat treatment unit U2 performs various heat treatments accompanied by formation of an underlayer film.

The processing module 12 incorporates a coating unit U1, a heat treatment unit U2, and a transfer device A3 that transfers the work W to these units. The process module 12 performs a liquid process including a process of forming a resist film on the underlying film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 coats a treatment liquid (resist) for forming a resist film on the underlayer film. The heat treatment unit U2 performs various heat treatments accompanied by the formation of a coating film. The coating unit U1 also has a function of forming a protective film (treatment film) of the resist solution on the periphery of the workpiece W.

The processing module 13 incorporates a coating unit U1, a heat treatment unit U2, and a transfer device A3 that transfers the work W to these units. The process module 13 forms an upper layer film on the resist film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 coats the liquid for forming the upper layer film on the resist film. The heat treatment unit U2 performs various heat treatments accompanied by formation of an upper layer film.

The processing module 14 incorporates a coating unit U1, a heat treatment unit U2, and a transfer device A3 that transfers the work W to these units. The process module 14 performs a developing process of the resist film subjected to the exposure process and a heat treatment accompanied by the developing process by the coating unit U1 and the heat treatment unit U2. The coating unit U1 applies a developer to the surface of the exposed workpiece W, and then cleans the workpiece W with a cleaning liquid, thereby performing a developing process of the resist film. The heat treatment unit U2 performs various heat treatments along with the development treatment. Specific examples of the heat treatment include heat treatment before development treatment (PEB: Post Exposure Bake), heat treatment after development treatment (PB: Post Bake), and the like.

On the carrier block 4 side in the processing block 5, a shelf unit U10 is provided. The shelf unit U10 is divided into a plurality of cells arranged in the up-down direction. A conveyor a7 including a lift arm is provided in the vicinity of the rack unit U10. The conveying device a7 raises and lowers the workpiece W between the cells of the rack unit U10.

A shelf unit U11 is provided on the interface block 6 side in the processing block 5. The shelf unit U11 is divided into a plurality of cells arranged in the up-down direction.

The interface block 6 transfers the workpiece W to and from the exposure apparatus 3. For example, the interface block 6 is provided with a transport device A8 including a transfer arm therein, and is connected to the exposure device 3. The conveying apparatus A8 conveys the workpiece W placed on the rack unit U11 to the exposure apparatus 3. The conveying device A8 receives the workpiece W from the exposure device 3 and returns it to the rack unit U11.

[ coating Unit ]

The coating unit U1 of the process module 12 will be described in detail. As shown in fig. 3, the coating unit U1 of the process module 12 includes a spin chuck 21 (substrate holding section), a spin driving section 22, support pins 23, a guide ring 25, a cup 26, an exhaust pipe 28, and a drain port 29. The coating unit U1 includes a treatment liquid supply unit 31. The processing liquid supply unit 31 has a function of supplying a processing liquid for forming a resist film to the surface of the workpiece W. The coating unit U1 further includes a gas supply unit 40.

The spin chuck 21 holds the workpiece W horizontally. The spin chuck 21 is connected to a rotation driving unit 22 via a spindle extending in the vertical direction (vertical direction). The rotation driving unit 22 rotates the spin chuck 21 at a predetermined rotation speed based on a control signal output from the control device 100.

The support pins 23 are pins capable of supporting the back surface of the workpiece W, and 3 support pins are provided around the spindle of the spin chuck 21, as an example. The support pin 23 is movable up and down by an elevating mechanism (not shown). The support pins 23 can transfer the workpiece W between a transport mechanism (not shown) of the workpiece W and the spin chuck 21.

The guide ring 25 is provided below the workpiece W held by the spin chuck 21, and has a function of guiding the processing liquid supplied to the surface of the workpiece W to the drain port. Further, cup-shaped bodies 26 for suppressing scattering of the processing liquid are provided so as to surround the outer periphery of the guide ring 25. The cup 26 has an upper opening to allow the workpiece W to be transferred to and from the spin chuck 21. Further, the upper end 26a of the cup 26 is located above the workpiece W. A space 27 serving as a discharge passage for the liquid is formed between the side peripheral surface of the cup-shaped body 26 and the outer peripheral edge of the guide ring 25. Further, an exhaust pipe 28 having an exhaust port 28a and a liquid discharge port 29 for discharging the liquid moving in the space 27 are provided below the cup-shaped body 26.

The treatment liquid supply unit 31 discharges the treatment liquid from above the workpiece W supported by the spin chuck 21 toward the surface of the workpiece W.

The processing liquid supply unit 31 includes a nozzle 31a, a processing liquid supply source 31b, and a pipe 31 c. An opening/closing valve controlled by the control device 100 may be provided in the pipe 31c of the processing liquid supply unit 31. The supply/stop of the processing liquid may be switched by switching the open state and the closed state of the on-off valve based on a control signal from the control device 100. Examples of the processing liquid supplied from the processing liquid supply unit 31 include a processing liquid (e.g., a resist liquid) used when a protective film is formed on the peripheral edge of the workpiece W.

The nozzle 31a of the treatment liquid supply unit 31 is attached to, for example, an arm extending in the horizontal direction, and is movable in the horizontal direction. Further, the nozzle 31a is also movable in the vertical direction. That is, although not shown in fig. 3, the coating unit U1 is provided with a moving mechanism for moving the nozzle 31a in the horizontal direction and the vertical direction. The nozzle 31a can be moved between a standby position outside the cup 26 and above the workpiece W by the operation of the moving mechanism.

The gas supply unit 40 has a function of supplying gas to the peripheral edge of the workpiece W. The gas supply unit 40 supplies the gas for the purpose of controlling the surface shape of the processing liquid (resist liquid) supplied to the surface of the workpiece W. The gas supply part 40 supplies 2 kinds of gases having different temperatures from each other, i.e., the 1 st gas F1 and the 2 nd gas F2. Therefore, the gas supply part 40 includes a1 st gas supply part 41 and a 2 nd gas supply part 42. Further, the temperature of the 1 st gas F1 was set to the 1 st temperature, and the temperature of the 2 nd gas F2 was set to the 2 nd temperature. In the coating unit U1, the drying state of the treatment liquid at the periphery of the work W is adjusted by alternately supplying the 1 st gas F1 and the 2 nd gas F2 to each position of the periphery of the front surface of the work W.

The 1 st gas supply unit 41 includes a nozzle 41a (the 1 st nozzle unit), a pipe 41b (the 1 st pipe), a temperature adjusting unit 41c (the 1 st temperature adjusting unit), an opening/closing valve 41d, and a gas supply source 45. The gas supply source 45 also functions as the gas supply source 45 of the 2 nd gas supply unit 42. The temperature adjusting portion 41c and the opening/closing valve 41d are provided in the pipe 41 b. The temperature adjusting section 41c introduces the gas flowing through the pipe 41b, and supplies the temperature-adjusted gas to the downstream pipe 41 b. The on-off valve 41d has a function of switching between an open state and a closed state to switch between supply and stop of the gas.

The 2 nd gas supply unit 42 also includes a nozzle 42a (2 nd nozzle unit), a pipe 42b (2 nd pipe), a temperature adjusting unit 42c (2 nd temperature adjusting unit), an opening/closing valve 42d, and a gas supply source 45, similarly to the 1 st gas supply unit 41. The temperature adjusting portion 42c and the opening/closing valve 42d are provided in the pipe 42 b. The temperature adjusting section 42c introduces the gas flowing through the pipe 42b, and supplies the temperature-adjusted gas to the downstream pipe 42 b. The on-off valve 42d has a function of switching between an open state and a closed state to switch between supply and stop of the gas.

When the same kind of gas is supplied as the 1 st gas F1 and the 2 nd gas F2, the gas supply source 45 can be shared. As the 1 st gas F1 and the 2 nd gas F2, nitrogen (N) can be used ₂ ) Inert gases such as argon (Ar). Further, the 1 st gas F1 and the 2 nd gas F2 may be different gases from each other. At this time, the gas supply source of the 1 st gas supply unit 41 and the gas supply source of the 2 nd gas supply unit 42 can be prepared separately.

The temperatures of the 1 st gas F1 and the 2 nd gas F2 when supplied to the workpiece W are different. For example, the temperature of the 1 st gas F1 may be set to 50 ℃ to 200 ℃ (warm air), and the temperature of the 2 nd gas F2 may be set to 15 ℃ to 30 ℃ (cold air). At least the temperature of the 1 st gas F1 is set higher than normal temperature (the atmospheric temperature in the processing space in which the workpiece W is disposed is set to "normal temperature"). In the present embodiment, the temperature of the 1 st gas F1 is higher than that of the 2 nd gas F2.

In fig. 3, although the nozzle 42a of the 2 nd gas supply unit 42 is schematically shown as being disposed inside the workpiece W with respect to the nozzle 41a of the 1 st gas supply unit 41, the 1 st gas F1 and the 2 nd gas F2 can be alternately supplied to each position of the peripheral edge portion W1 (see fig. 4) of the workpiece W. The actual arrangement of the

nozzles

41a, 42a is thus different from that shown in fig. 3.

For example, the

nozzles

41a and 42a are attached to an arm or the like extending in the horizontal direction, and are movable in the horizontal direction and the vertical direction. For example, the

nozzles

41a and 42a may be provided with a moving mechanism for moving the nozzles in the horizontal direction and the vertical direction, respectively. The

nozzles

41a and 42a can be moved between a standby position outside the cup 26 and above the workpiece W by the operation of the moving mechanism.

Instead of providing the

nozzles

41a and 42a separately, the gas supply nozzle 50 in which the

nozzles

41a and 42a are integrated may be used. Fig. 4 shows an example of the gas supply nozzle 50. Fig. 5 schematically shows an example of the structure of the vicinity of the discharge opening of the gas supply nozzle 50.

The gas supply nozzle 50 includes an annular main body 51 and 4

nozzle portions

52a, 52b, 52c, and 52 d. The

nozzle units

52a and 52c function as a nozzle 41a for supplying the 1 st gas F1, and the

nozzle units

52b and 52d function as a nozzle 42a for supplying the 2 nd gas F2.

The main body 51 has a ring-shaped structure having a diameter corresponding to the outer peripheral shape of the workpiece W, and is formed to have a size that overlaps (overlaps) the peripheral edge portion W1 of the workpiece W in a plan view. The main body 51 is provided with a flow path connected to the pipe 41b of the 1 st gas F1 and a flow path connected to the pipe 42b of the 2 nd gas F2. In fig. 3, the

pipes

41b and 42b are schematically shown connected to the upper portion of the body 51, but the connection position of the gas supply nozzle 50 and the

pipes

41b and 42b is not particularly limited, and the shape of the internal flow path can be changed according to the connection position.

When the 1 st gas F1 and the 2 nd gas F2 are supplied to the workpiece W, the main body portion 51 is disposed above the workpiece W so as to overlap (overlap) the workpiece W in a plan view, as shown in fig. 4. In fig. 4, the gas supply nozzle 50 and the workpiece W are shown in a state of being spaced apart in the vertical direction, but when the 1 st gas F1 and the 2 nd gas F2 are supplied, the gas supply nozzle 50 is brought closer to the workpiece W than in the state shown in fig. 4.

The

nozzle portions

52a, 52b, 52c, and 52d are attached to the lower side of the body portion 51, and are arranged at equal intervals, for example, on the circumference so as to be sequentially arranged along the circumferential direction of the

nozzle portions

52a, 52b, 52c, and 52 d. In the example shown in fig. 4, the

nozzle portions

52a and 52c may be arranged to face each other with the center of the body 51 (corresponding to the center of the workpiece W) therebetween, and the

nozzle portions

52b and 52d may be arranged to face each other with the center of the body 51 (corresponding to the center of the workpiece W) therebetween. The

nozzle portions

52a, 52b, 52c, and 52d are each arc-shaped along the annular body portion 51. The length of the

nozzle portions

52a, 52b, 52c, and 52d along the arc shape is not particularly limited, and may be appropriately changed within a range in which the

nozzle portions

52a, 52b, 52c, and 52d do not overlap with each other.

The

nozzles

52a, 52b, 52c, and 52d have a shape opened downward to supply the 1 st gas F1 or the 2 nd gas F2 to the workpiece W.

Fig. 5 (a) and 5 (b) show examples of the opening 52x formed in the lower surface of the nozzle portion 52 a. Fig. 5 (a) shows an example in which the opening 52x is formed in a slit shape extending along the longitudinal direction of the arc-shaped nozzle portion 52 a. Fig. 5 (b) shows an example in which the opening 52x has a shape in which a plurality of small holes 52y aligned along the longitudinal direction of the arc-shaped nozzle portion 52a are combined. The shape of the opening 52x of the nozzle 52a may be a slit shape as shown in fig. 5 (a), a shape in which a plurality of small holes are arranged as shown in fig. 5 (b), or a combination thereof. Although the nozzle 52a is illustrated in fig. 5, the nozzle 52b to 52d also have the same opening 52x as the nozzle 52a illustrated in fig. 4.

In the gas supply nozzle 50, nozzle portions 52a to 52d having an opening 52x shown in fig. 4 are arranged in an annular shape below the body portion 51 as shown in fig. 4. The gas supply systems for supplying the 1 st gas F1 and the 2 nd gas F2 to the gas supply nozzle 50 are independent of each other as shown in fig. 4. Therefore, the gas supply nozzle 50 can simultaneously supply the 1 st gas F1 from the

nozzle portions

52a, 52c and the 2 nd gas F2 from the

nozzle portions

52b, 52 d.

When the workpiece W disposed below is rotated in a state where the 1 st gas F1 or the 2 nd gas F2 is supplied to the nozzle portions 52a to 52d, the respective positions (points) of the peripheral edge portion W1 of the workpiece W pass below the nozzle portions 52a to 52d in sequence. The 1 st gas F1 and the 2 nd gas F2 supplied from the gas supply nozzle 50 are alternately contacted. This state continues while the workpiece W continues to rotate.

The control device 100 controls the coating and developing device 2. The control device 100 executes a process such that the liquid process is performed on the workpiece W by the process module 12, based on a predetermined condition. The control device 100 supplies the processing liquid to the workpiece W by the processing liquid supply unit 31 based on, for example, predetermined conditions, and controls the rotation of the workpiece W at this time. As shown in fig. 6, the controller 100 controls the temperature controller 41c and the on-off valve 41d of the 1 st gas supply unit 41 and the temperature controller 42c and the on-off valve 42d of the 2 nd gas supply unit 42. For example, based on the process conditions, the respective portions of the 1 st gas supply unit 41 and the respective portions of the 2 nd gas supply unit 42 are controlled while controlling the rotation of the workpiece W.

The control device 100 may be configured by a plurality of functional blocks for executing the above-described liquid processing. The functional blocks are not limited to blocks realized by executing programs, and may be blocks realized by dedicated circuits (for example, logic circuits) or Integrated circuits (ASIC) obtained by integrating the dedicated circuits.

The hardware of the control device 100 may be constituted by one or more control computers, for example. As shown in fig. 7, the control device 100 includes a circuit 201 as a hardware configuration. The circuit 201 may be formed of a circuit component (circuit). The circuit 201 may include a processor 202, a memory 203, a storage 204, a driver 205, and an input-output port 206.

The processor 202 executes a program in cooperation with at least one of the memory 203 and the storage 204, and executes input and output of signals via the input/output port 206, thereby configuring the above-described functional modules. The memory 203 and the storage 204 store various information, programs, and the like used in the control device 100. The driver 205 is a circuit for driving each of the various devices of the coating and developing device 2. The input/output port 206 inputs/outputs signals between the driver 205 and each part constituting the coating and developing apparatus 2.

The substrate processing system 1 may have one control apparatus 100, or may have a controller group (control unit) including a plurality of control apparatuses 100. In the case where the substrate processing system 1 has a controller group, for example, a plurality of functional modules may be realized by one control device different from each other, or may be realized by a combination of 2 or more control devices 100. In the case where the control device 100 is configured by a plurality of computers (circuits 201), a plurality of functional blocks may be realized by one computer (circuit 201). Further, the control device 100 may be realized by a combination of 2 or more computers (circuits 201). The control device 100 may have a plurality of processors 202. In this case, each of the plurality of functional blocks may be implemented by one processor 202, or may be implemented by a combination of 2 or more processors 202. The various operations of the present embodiment can be implemented by providing a part of the functions of the control device 100 of the substrate processing system 1 in another device different from the substrate processing system 1 and connecting the substrate processing system 1 via a network. For example, if the functions of the processors 202, the memories 203, and the memories 204 of the plurality of substrate processing systems 1 are collectively implemented by 1 or more other devices, information and operations of the plurality of substrate processing systems 1 can be collectively managed and controlled at a remote location.

The processing of the workpiece W performed in the above-described substrate processing system 1 will be explained. The control device 100 controls the coating and developing device 2, for example, so that the processing of the workpiece W is performed in the following steps. First, the controller 100 controls the transfer device a1 to transfer the workpiece W in the carrier C to the rack unit U10, and controls the transfer device a7 to arrange the workpiece W in a cell for the process module 11.

Next, the control device 100 controls the transfer device a3 to transfer the work W of the rack unit U10 to the coating unit U1 and the heat treatment unit U2 in the process module 11. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an underlayer film on the surface of the workpiece W. Thereafter, the controller 100 controls the transfer device A3 to return the work W having the lower layer film formed thereon to the rack unit U10, and controls the transfer device a7 to dispose the work W in the processing module 12.

Next, the control device 100 controls the transfer device a3 to transfer the work W of the rack unit U10 to the coating unit U1 and the heat treatment unit U2 in the process module 12. The control apparatus 100 controls the coating unit U1 and the heat treatment unit U2 to form a resist film on the lower layer film of the workpiece W. An example of the liquid processing method performed in the processing module 12 will be described later. Then, the controller 100 controls the transfer device A3 to return the workpiece W to the rack unit U10, and controls the transfer device a7 to arrange the workpiece W in the cell for the process module 13.

Next, the control device 100 controls the transfer device a3 to transfer the work W of the rack unit U10 to the coating unit U1 and the heat treatment unit U2 in the process module 13. Further, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper layer film on the resist film of the work W. The control device 100 then controls the conveying device a3 to convey the workpiece W to the rack unit U11.

Next, the controller 100 controls the conveyor A8 to send out the workpiece W stored in the rack unit U11 to the exposure apparatus 3. Then, the exposure apparatus 3 performs an exposure process on the resist film formed on the workpiece W. The controller 100 then controls the conveyor A8 to receive the workpiece W subjected to the exposure processing from the exposure device 3, and arranges the workpiece W in the cell for the processing module 14 in the rack unit U11.

Next, the control device 100 controls the transfer device a3 to transfer the workpiece W of the rack unit U11 to the heat treatment unit U2 of the process module 14. Then, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to perform the heat treatment and the development treatment accompanying the development treatment. Through the above processing, the control apparatus 100 ends the substrate processing for 1 workpiece W.

[ method of treating substrate ]

Next, an example of a substrate processing method performed in the processing module 12 will be described. Here, as a substrate processing method, a method of forming a resist film on the peripheral edge portion W1 of the front surface of the workpiece W will be described.

Fig. 8 is a flowchart showing an example of a process flow for forming a resist film on the front surface of the workpiece W.

As shown in fig. 8, the control device 100 executes step S01. In step S01, the controller 100 controls the transfer device A3 and the support pins 23 of the coating unit U1 to support the work W on the spin chuck 21 of the coating unit U1. After that, the control device 100 starts the rotation of the workpiece W by driving the rotation driving unit 22. For example, the rotation speed of the workpiece W at this time is about 100rpm to 2000 rpm.

Next, control device 100 executes step S02. In step S02, the control device 100 controls the treatment liquid supply unit 31 to discharge the treatment liquid from the nozzle 31a toward the center of the front surface of the workpiece W while rotating the workpiece W by driving the rotation drive unit 22. The solvent supplied to the center of the front surface of the workpiece W spreads in the radial direction of the workpiece W by the rotation of the workpiece W. This enables the processing liquid (resist liquid) to be deposited on the entire front surface of the workpiece W. The control device 100 stops the discharge of the processing liquid from the processing liquid supply unit 31 at the timing when the predetermined amount of the processing liquid is discharged from the nozzle 31 a.

After that, the control device 100 executes step S03. In step S03, the controller 100 controls the 1 st gas supply unit 41 and the 2 nd gas supply unit 42 of the gas supply unit 40 to supply the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) to the peripheral edge portion W1 of the workpiece W. Specifically, the control device 100 drives the rotation driving unit 22 to supply the 1 st gas F1 from the 1 st gas supply unit 41 of the gas supply unit 40 and supply the 2 nd gas F2 from the 2 nd gas supply unit 42 while rotating the workpiece W. As a result, the 1 st gas F1 is supplied from the

nozzle portions

52a, 52c functioning as the nozzle 41a among the gas supply nozzles 50, and the 2 nd gas F2 is supplied from the

nozzle portions

52b, 52d functioning as the nozzle 42 a. Thereby, the respective positions of the peripheral edge portion W1 of the workpiece W are alternately brought into contact with the 1 st gas F1 and the 2 nd gas F2, respectively. Further, the supply amounts of the 1 st gas F1 and the 2 nd gas F2 in step S03 may be adjusted so that the wind speeds from the nozzle portions 52a to 52d are 0.05m/sec to 1m/sec, for example. The wind speeds from the nozzle portions 52a to 52d may be different from each other.

The rotation speed of the workpiece W can be adjusted to such a degree that the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) are alternately supplied to each position of the peripheral edge portion W1 of the workpiece W, for example, every 1 second to 10 seconds. As an example, the supply of the 1 st gas F1 (warm air) for about 5 seconds and the supply of the 2 nd gas F2 (cold air) for about 5 seconds may be alternately repeated. Further, the supply times of the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) may be different from each other.

In step S03, the volatile component in the processing liquid supplied to the front surface of the workpiece W is volatilized. That is, step S03 can function as a step of drying and solidifying the processing liquid. By performing this process, the processing liquid supplied to the front surface of the workpiece W is dried, and a processing film (resist film) can be formed. Step S03 can be performed until at least the surface of the processing liquid is solidified, and its shape is stabilized.

Next, control device 100 executes step S04. In step S04, the control device 100 waits until a predetermined time period elapses while the rotation of the workpiece W and the supply of the gas from the gas supply unit 40 are performed. This state continues until a predetermined time elapses (S04 — no period). After the predetermined time has elapsed (S04 — yes), the control device 100 ends the rotation of the workpiece W and the supply of the gas from the gas supply unit 40.

In addition, the step S03 (supply of the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air)) may be performed after the process of the step S02 (release of the processing liquid) as described above, but may be performed partially simultaneously with the step S02 (release of the processing liquid).

By the above series of processes, in particular, by alternately supplying the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) to the peripheral edge portion W1 of the workpiece W, the shape of the processing film (for example, resist film) on the peripheral edge portion W1 of the front surface of the workpiece W is changed. Fig. 9 is a diagram illustrating changes in the treatment liquid R supplied to the peripheral edge portion W1 of the workpiece W, and is an enlarged diagram of the vicinity of the peripheral edge portion of the workpiece W. Fig. 9 (a) shows an example in which, instead of supplying the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air), the back surface of the workpiece W is heated by a heater to volatilize the solvent component of the processing liquid R and dry the processing liquid R. The processing liquid R (resist liquid) for forming a resist film is supplied to, for example, the center of the rotating workpiece W as described above, and spreads to the peripheral edge portion W1 of the workpiece W by centrifugal force. At this time, a projection R1 formed by the resist solution may be formed on the peripheral edge W1 of the workpiece W. The projection R1 is a region (projection) which is extremely raised compared with other regions, and is formed annularly at the outer peripheral end of the processing liquid R spreading on the workpiece W. The projection R1 is formed by marangoni convection of the processing liquid applied to the front surface of the workpiece W.

The marangoni convection is a flow generated in the processing liquid R (inside the liquid to be a resist film) staying on the surface of the workpiece W, and when the processing liquid volatilizes, the processing liquid moves in the lateral direction (horizontal direction) toward a portion to be the outline of the processing liquid R. Fig. 9 (a) schematically shows an example of a case where the projection R1 is formed due to marangoni convection occurring in the vicinity of the peripheral edge portion W1 of the workpiece W. Further, when the workpiece W is heated by the heater H provided on the back surface of the workpiece W, a temperature difference is generated between a portion close to the front surface of the workpiece W and a portion away from the workpiece W in the treatment liquid R, and marangoni convection is likely to occur. When the marangoni convection occurs in the processing liquid R on the workpiece W, solid components (for example, resin particles in the case of a resist liquid) constituting the processing liquid move to a portion that becomes the outline of the processing liquid R in accordance with the convection. The portion that becomes the outline of the processing liquid R corresponds to the peripheral edge portion W1 of the workpiece W. Solid components in the processing liquid R are concentrated and precipitated on the peripheral edge portion W1 of the workpiece W, and as shown in fig. 9 (a), a projection R1 having a larger thickness than other regions may be formed. When the processing liquid R is dried in this state, a processing film (e.g., a resist film) formed of the processing liquid is formed in a state where the projection R1 remains. This phenomenon, also known as the coffee ring (coffee stain) effect, occurs when the liquid is allowed to dry and solidify.

In contrast, in the method described in the present embodiment, the method of drying the treatment liquid R (the method of volatilizing the solvent in the treatment liquid) is changed to suppress the marangoni convection. Fig. 9 (b) schematically shows a method of alternately bringing the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) into contact with the processing liquid R on the workpiece W as described in the present embodiment. At this time, the generation of the marangoni convection in the treatment liquid staying on the surface of the workpiece W is suppressed. Even if the marangoni convection is generated, the 1 st gas F1 (warm air) and the 2 nd gas F2 (cool air) are blown from above to the front surface of the workpiece W at the peripheral edge portion W1 of the workpiece W. Therefore, the solid components in the processing liquid R can be prevented from being intensively precipitated on the peripheral edge portion W1 of the workpiece W. As a result, as shown in fig. 9 (b), the formation of the projection R1 at the peripheral edge portion W1 of the work W is suppressed. That is, by supplying the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air), the surface shape of the treatment film formed from the treatment liquid R can be adjusted to be smooth.

In the above method, the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) are alternately supplied to each point of the peripheral edge portion W1. In other words, the 1 st gas F1 (warm air) is intermittently supplied to each point of the peripheral edge portion W1 of the workpiece W. In this way, the curing speed of the treatment liquid R can be adjusted.

In order to evaporate the solvent in the processing liquid R and rapidly dry the processing liquid R similarly to the case of heating the rear surface of the workpiece W by the heater H, a method of continuously supplying only the 1 st gas F1 (warm air) to the peripheral edge portion W1 of the workpiece W is also considered. In the case of this manner, the 1 st gas F1 is supplied to the peripheral edge portion W1 from above the workpiece W, and therefore, the processing liquid R can be suppressed from forming the projection R1 at the peripheral edge portion W1 of the workpiece W. Further, since the temperature difference (temperature variation) in the processing liquid R is smaller than the heating by the heater H, the formation of the projection R1 can be suppressed. However, if the 1 st gas F1 (warm air) is continuously supplied to the front surface of the workpiece W, the drying rate (volatilization rate of the solvent) of the treatment liquid R becomes high. At this time, the drying of the treatment liquid R may be faster in the peripheral edge portion W1 of the workpiece W than in other regions, and the smoothness of the surface shape of the treatment film on the front surface of the workpiece W may be affected. Thus, as described above, the 1 st gas F1 (warm air) is intermittently supplied to each point of the peripheral edge portion W1 of the workpiece W, whereby the solidification rate of the processing liquid R can be adjusted.

As a method of intermittently supplying the 1 st gas F1 (warm air), a method of not supplying the 2 nd gas F2 (cold air) may be used. That is, the mode of only intermittently supplying the 1 st gas F1 (warm air) to each position of the peripheral edge portion W1 of the workpiece W without supplying the 2 nd gas F2 (cold air) may be realized. As a method of supplying only the 1 st gas F1 (warm air) intermittently at each position of the peripheral edge portion W1 of the workpiece W by using the gas supply nozzle 50, for example, a method of supplying the 1 st gas F1 (warm air) from all the nozzle portions 52a to 52d can be mentioned. At this time, by adjusting the rotation speed of the workpiece W, the 1 st gas F1 can be intermittently supplied to each position of the peripheral edge portion W1 of the workpiece W.

(modification example)

As described above, in order to suppress the formation of the protrusion of the processing film, at least the 1 st gas F1 (warm air) may be supplied to each position of the peripheral edge portion W1 of the workpiece W. Further, if the 1 st gas F1 (warm air) can be intermittently supplied to each position of the peripheral edge portion W1 of the workpiece W, the formation of the projection can be further suppressed. Hereinafter, a modified example of the mode in which the 1 st gas F1 (warm air) is intermittently supplied to each position of the peripheral edge portion W1 of the workpiece W will be described as a modified example.

Fig. 10 (a) is a diagram showing a modification of the installation positions of the

nozzles

41a and 42 a. In the above embodiment, the example of supplying the 1 st gas F1 and the 2 nd gas F2 by using the gas supply nozzle 50 has been described, but nozzles having other shapes may be used. Fig. 10 (a) shows an example in which the

nozzles

41a and 42a are attached to the upper end 26a of the cup member 26. At this time, by adjusting the arrangement of the

nozzles

41a and 42a so that the gas supplied from the openings of the

nozzles

41a and 42a is directed toward the peripheral edge of the workpiece W, the gas can be supplied to the peripheral edge of the workpiece W similarly to the gas supply nozzle 50. In fig. 10 (a), only 1 nozzle is shown, but a plurality of nozzles may be provided.

Fig. 10 (b) shows a gas supply nozzle 50X obtained by changing the shape of the gas supply nozzle 50. The gas supply nozzle 50X is different from the gas supply nozzle 5 in that nozzle portions for supplying the 1 st gas F1 and the 2 nd gas F2 are arranged in a ring shape. That is, the main body of the gas supply nozzle 50X substantially functions as a plurality of nozzle portions. In the gas supply nozzle 50X having such a shape, by adjusting the arrangement of the opening through which the 1 st gas F1 is supplied and the opening through which the 2 nd gas F2 is supplied, the supply targets of the 1 st gas F1 and the 2 nd gas F2 can be appropriately adjusted. As an example, as shown in fig. 10 (b), a mode in which the 1 st gas F1 and the 2 nd gas F2 are alternately supplied along the peripheral edge portion W1 of the workpiece W may be adopted. Fig. 10 (b) shows a mode in which the 1 st gas F1 and the 2 nd gas F2 are supplied from 4 annular portions, respectively, but the number can be changed as appropriate.

Fig. 11 is a diagram for explaining a configuration in which the configurations of the 1 st gas supply unit 41 and the 2 nd gas supply unit 42 are realized by one nozzle unit. Fig. 11 shows a configuration example in which the 1 st gas F1 (warm air) and the 2 nd gas F2 (cool air) are alternately supplied to the downstream side nozzle using one pipe 46. At this time, the controller 100 controls the temperature adjusting unit 47 and the on-off valve 48 on the pipe 46, thereby changing the type of gas supplied from the nozzle provided downstream of the pipe 46. As an example of the control of the temperature adjusting section 47, for example, the temperature of the 2 nd gas F2 may be adjusted by turning on the heater of the temperature adjusting section 47, and the temperature of the 2 nd gas F2 may be adjusted by turning off the heater. Further, the set temperature of the temperature adjusting section 47 may be set to 2 of the temperature of the 1 st gas F1 and the temperature of the 2 nd gas F2. In this way, when the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) are alternately supplied from the single pipe 46, the temperature of the gas supplied from the nozzle can be controlled by switching the setting of the single temperature adjustment unit 47.

As a method of alternately supplying the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) from one nozzle, a

method using pipes

41b and 42b corresponding to 2 kinds of gases can be employed. Specifically, as shown in fig. 3, a method may be adopted in which the

pipes

41b and 42b corresponding to the 2 kinds of gases are provided, and a switching valve is further provided in a stage before the nozzle, thereby selecting the gas supplied from the nozzle from among the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air). In this manner, the method for supplying the 1 st gas F1 (hot air) and the 2 nd gas F2 (cold air) to the peripheral edge portion W1 of the workpiece W can be appropriately changed.

Fig. 12 shows a modification of the mechanism for holding the workpiece W. In the above embodiment, the case where the gas is supplied while rotating the workpiece W, which is a circular plate, is held horizontally by the spin chuck 21 has been described. In addition, as a method for drying the workpiece W after the treatment liquid R is supplied, the gas may be supplied while horizontally conveying the workpiece W. Specifically, as shown in fig. 12, the workpiece W can be conveyed in the horizontal direction by the conveying mechanism 80. At this time, as shown in fig. 12, the

nozzles

41a, 42a are disposed above the peripheral edge portion W1 of the workpiece W being conveyed. By supplying the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) from the respective nozzles, the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) can be alternately supplied to each position of the peripheral edge portion W1 of the workpiece W conveyed by the conveyance mechanism 80.

Further, as shown in fig. 12, when the

nozzles

41a, 42a are alternately arranged along one peripheral edge portion of the workpiece W, the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) can be alternately supplied to each position of the peripheral edge portion W1 of the workpiece W. As shown in fig. 12, the

nozzles

41a and 42a may be arranged so as to be long along the moving direction of the workpiece W. At this time, by adjusting the length in the longitudinal direction (the length of the region where the opening exists), the supply time for supplying the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air) to each position of the workpiece W can be adjusted. Further, the conveying speed of the workpiece W by the conveying mechanism 80 can also be used to adjust the supply time of the 1 st gas F1 (warm air) and the 2 nd gas F2 (cold air).

[ Effect ]

According to the substrate processing apparatus and the substrate processing method described above, the 1 st gas F1 having the 1 st temperature higher than the normal temperature can be supplied to the peripheral edge portion W1 on the front surface of the workpiece W (substrate) held by the spin chuck 21 serving as the substrate holding unit. By supplying the 1 st gas F1, the processing liquid is dried in a state where the processing liquid in the peripheral edge portion W1 of the workpiece W is in contact with the 1 st gas F1, and therefore, the drying speed of the processing liquid can be adjusted as compared with the prior art, and as a result, the formation of the projection at the peripheral edge portion W1 can be suppressed. Therefore, a process film having a uniform film thickness can be formed on the substrate.

As described above, the reason why the bulge R1 is formed on the peripheral edge portion of the workpiece W is the temperature difference in the treatment liquid on the workpiece W. On the other hand, by drying the processing liquid R while supplying the 1 st gas F1 as described above, the temperature difference in the processing liquid R can be adjusted, and as a result, the formation of the bump can be suppressed. Therefore, a process film having a uniform film thickness can be formed in the work W.

In addition, when the mode of intermittently supplying the 1 st gas F1 is adopted, the formation of the projection at the peripheral edge portion W1 of the workpiece W can be further suppressed, and a process film having a more uniform film thickness can be formed on the substrate.

In addition, the gas supply section 40 that supplies the 1 st gas F1 may have a nozzle 41a (1 st nozzle section) that is provided above the peripheral edge portion W1 and supplies the 1 st gas F1. In this manner, by supplying the 1 st gas F1 from above the workpiece W, the formation of the bulge in the peripheral edge portion W1 can be further suppressed, and a process film having a more uniform film thickness can be formed on the workpiece W.

In addition, the gas supply portion 40 may alternately supply the 1 st gas F1 and the 2 nd gas F2 at the 2 nd temperature lower than the 1 st temperature to each position of the peripheral edge portion W1 of the workpiece W. In this manner, the drying rate of the treatment liquid at the peripheral edge portion W1 can be adjusted, and the formation of the projection at the peripheral edge portion W1 can be suppressed. Therefore, a process film having a more uniform film thickness can be formed on the workpiece W.

In addition, the gas supply section 40 may simultaneously supply the 1 st gas F1 and the 2 nd gas F2 to positions different from each other on the front surface of the workpiece W. In this manner, the 1 st gas and the 2 nd gas can be supplied to the respective positions of the substrate at high speed.

Further, a nozzle 42a (2 nd nozzle part) for supplying the 2 nd gas may be further provided. By providing the 2 nd nozzle unit separately, the 1 st gas F1 and the 2 nd gas F2 can be supplied independently.

Further, a mode may be adopted in which the substrate has a plurality of the 1 st nozzle portions and the 2 nd nozzle portions, respectively, and the 1 st nozzle portions and the 2 nd nozzle portions are alternately arranged along the peripheral portion above the peripheral portion of the substrate. At this time, as described in the above embodiment, by relatively moving the substrate in the extending direction of the peripheral edge portion W1 (for example, rotating the workpiece W), the configuration can be realized in which the 1 st gas and the 2 nd gas are alternately supplied to each position of the peripheral edge portion W1.

While various exemplary embodiments have been described above, the present invention is not limited to the above exemplary embodiments, and various omissions, substitutions, and changes may be made. Further, elements of different embodiments may be combined to form another embodiment.

For example, in the above-described embodiment, the so-called spin coating method in which the treatment liquid is applied from the center while rotating the circular workpiece W has been described, and the above-described method can be applied regardless of the application method of the treatment liquid to the workpiece W. That is, the method can be applied to the workpiece W by a so-called squeegee (squeegee) method.

From the above description, various embodiments of the present invention have been described in the present specification for the purpose of explanation, and it is to be understood that various modifications may be made without departing from the scope and spirit of the present invention. Accordingly, it is intended that the various embodiments disclosed herein be considered in all respects as illustrative and not restrictive, the true scope and spirit being indicated by the appended claims.

Claims

1. A substrate processing apparatus for forming a processing film on a surface of a substrate, comprising:

a substrate holding section for holding a substrate to which a treatment liquid before drying for forming the treatment film is applied; and

and a gas supply unit including a1 st nozzle unit, wherein the 1 st nozzle unit supplies a1 st gas having a1 st temperature higher than a normal temperature to a peripheral portion of a surface of the substrate held by the substrate holding unit.

2. The substrate processing apparatus according to claim 1, wherein:

the gas supply unit intermittently supplies the 1 st gas to each position of the peripheral edge portion of the substrate.

3. The substrate processing apparatus according to claim 1 or 2, wherein:

the 1 st nozzle supplies the 1 st gas to the peripheral edge portion of the substrate from above the peripheral edge portion of the substrate.

4. The substrate processing apparatus according to claim 1 or 2, wherein:

the gas supply unit alternately supplies the 1 st gas and the 2 nd gas having a 2 nd temperature lower than the 1 st temperature to respective positions of the peripheral portion of the substrate.

5. The substrate processing apparatus according to claim 4, wherein:

the gas supply section can simultaneously supply the 1 st gas and the 2 nd gas to positions of the surface of the substrate different from each other.

6. The substrate processing apparatus according to claim 5, wherein:

the gas supply unit further includes a 2 nd nozzle unit for supplying the 2 nd gas, and the 2 nd nozzle unit is disposed above a peripheral edge portion of the substrate.

7. The substrate processing apparatus according to claim 6, wherein:

the substrate has a plurality of the 1 st nozzle portions and a plurality of the 2 nd nozzle portions, and the 1 st nozzle portions and the 2 nd nozzle portions are alternately arranged along a peripheral portion of the substrate above the peripheral portion.

8. The substrate processing apparatus according to claim 6 or 7, comprising:

a1 st pipe for supplying the 1 st gas to the 1 st nozzle;

a1 st temperature adjusting unit that adjusts the temperature of the gas flowing through the 1 st pipe to the 1 st temperature;

a 2 nd pipe for supplying the 2 nd gas to the 2 nd nozzle part; and

a 2 nd temperature adjusting unit for adjusting the gas flowing through the 2 nd pipe to the 2 nd temperature.

9. The substrate processing apparatus according to claim 4, wherein:

the 1 st nozzle unit alternately supplies the 1 st gas and the 2 nd gas to the surface of the substrate.

10. The substrate processing apparatus according to claim 9, comprising:

a pipe for supplying the gas to the 1 st nozzle; and

a temperature adjusting part for adjusting the temperature of the gas supplied from the 1 st nozzle part to the substrate,

the temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching the temperature of the gas flowing through the pipe between the 1 st temperature and the 2 nd temperature.

11. The substrate processing apparatus according to claim 10, wherein:

the temperature adjusting unit switches the temperature of the gas flowing through the pipe between the 1 st temperature and the 2 nd temperature by switching between an on state and an off state of a power supply of a heater that heats the gas flowing through the pipe.

12. The substrate processing apparatus according to claim 10, wherein:

the temperature adjusting unit changes the setting of a heater for heating the gas flowing through the pipe, thereby switching the temperature of the gas flowing through the pipe between the 1 st temperature and the 2 nd temperature.

13. The substrate processing apparatus according to claim 9, comprising:

a1 st pipe for supplying the 1 st gas to the 1 st nozzle;

a 2 nd pipe for supplying the 2 nd gas to the 1 st nozzle part; and

the temperature adjusting unit adjusts the temperature of the gas supplied to the substrate by switching a pipe for supplying the gas to the nozzle unit between the 1 st pipe and the 2 nd pipe.

14. The substrate processing apparatus according to claim 1 or 2, wherein:

the substrate holder is a rotation mechanism that horizontally rotates the substrate while attracting the substrate.

15. The substrate processing apparatus according to claim 14, wherein:

a cup-shaped body disposed so as to surround the periphery of the substrate supported by the substrate holding portion, around the substrate holding portion,

the gas supply unit supplies the 1 st gas to a peripheral edge portion of the surface of the substrate from a supply port attached to the cup-shaped body.

16. The substrate processing apparatus according to claim 1 or 2, wherein:

the substrate holding section is a conveying mechanism that conveys the substrate in a horizontal direction.

17. A substrate processing method for forming a processing film on a surface of a substrate, characterized by comprising:

the method includes a step of applying a1 st gas having a temperature higher than a normal temperature to a peripheral portion of a surface of a substrate to which a processing liquid before drying is applied to form a processing film.