CN115083875A - Ion implantation process monitoring method - Google Patents
Ion implantation process monitoring method Download PDFInfo
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- CN115083875A CN115083875A CN202211011240.2A CN202211011240A CN115083875A CN 115083875 A CN115083875 A CN 115083875A CN 202211011240 A CN202211011240 A CN 202211011240A CN 115083875 A CN115083875 A CN 115083875A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
The invention provides an ion implantation process monitoring method and an ion implantation process thereof, wherein the ion implantation process monitoring method comprises the following steps: providing a wafer to be ion implanted, sequentially forming a protective layer and a photoresist layer on the upper surface of the wafer, fixing the wafer on a target disc, and implanting ions into the wafer based on the photoresist layer; reading and exporting the scanning position of an ion beam in a working log of the ion implantation machine and emission current data generated by a plasma emission gun, and drawing a real-time change curve of the scanning position and the emission current based on the exported data; and providing a reference curve, and comparing the real-time change curve with the reference curve to confirm whether the machine works normally. The invention reads and derives the data of the scanning position and the emission current of the ion beam in the working log of the ion implantation machine, draws the real-time change curve of the scanning position and the emission current of the ion beam and compares the real-time change curve with the reference curve, thereby realizing the online real-time judgment of the ion implantation working state.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuit manufacturing, and relates to an ion implantation process monitoring method.
Background
With the development of semiconductor technology towards large scale integrated circuits (LSI) or very large scale integrated circuits (VLSI), the size of semiconductor devices is smaller and smaller, and the requirements for ion implantation are higher and higher, and the ion implantation machine is mainly a machine for implementing a specific doping process by implanting ions into a wafer in a specific energy, atomic weight and angle. In the process of ion implantation, the requirements for dose, angle and the like are strict, the dose error is generally required to be not more than 3%, and the consequence of wafer scrapping can be caused by too large or too small dose.
The semiconductor manufacturing ion implantation process is widely applied to various ion doping formed by devices, wafers (Wafer) are scanned up and down on a target disc (Platen) and together with the target disc in the ion implantation process so as to ensure that the whole Wafer can be subjected to the ion implantation process, and the uniformity and the stability of an ion Beam (IMP Beam) in the up-and-down scanning process determine indexes such as accuracy and uniformity of ion implantation dosage on the Wafer. At present, the monitoring of the process is only offline resistance measurement or thermal wave monitoring (offline Rs/TW monitor), and an online effective means is lacked, so that a machine can feed back the problem after performing an electrical Test of Wafer Acceptance Test (WAT), and the batch of wafers on the line is affected due to the lag of the feedback result of the ion implantation state.
Therefore, it is urgently needed to find an ion implantation process monitoring method capable of feeding back the ion implantation state on line in real time.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for monitoring an ion implantation process, which is used to solve the problem of poor ion implantation process of a batch of wafers caused by off-line monitoring of hysteresis of an ion implantation state during an ion implantation process in the prior art.
To achieve the above and other related objects, the present invention provides a method for monitoring an ion implantation process, comprising the steps of:
providing a wafer to be ion implanted, and forming a protective layer on the upper surface of the wafer;
forming a light resistance layer on the upper surface of the protective layer, fixing the wafer on a target disc of an ion implantation machine, and performing ion implantation on the wafer based on the light resistance layer;
reading and exporting data of a scanning position of an ion belt and emission current generated by a plasma emission gun corresponding to the scanning position in a working log of the ion implantation machine in real time, and drawing a real-time change curve of the scanning position of the ion belt and the emission current based on the exported data;
providing a reference curve, wherein the reference curve is drawn based on the scanning position of the ion beam and emission current data when ions are not implanted into the wafer, comparing the real-time change curve with the reference curve, and judging the real-time working state of ion implantation of the ion implantation machine according to the comparison result so as to determine whether the machine works normally.
Optionally, after forming the photoresist layer and before performing ion implantation, the method further includes a step of patterning the photoresist layer.
Optionally, the ion beam scans the wafer up and down during ion implantation.
Optionally, the length of the ion beam in the direction perpendicular to the scanning direction is not less than the diameter of the wafer, and the length of the ion beam in the scanning direction is less than the diameter of the wafer.
Optionally, the emission current includes a current generated by neutralizing charges on the surface of the wafer and a current generated by consuming charges by a machine.
Optionally, during the normal ion implantation process, the real-time variation curve changes in a quasi-periodic manner.
Optionally, in a normal ion implantation process, the emission current value corresponding to the ion beam scanned to the middle portion of the wafer is greater than the emission current value corresponding to the ion beam scanned to the top of the wafer and the bottom of the wafer.
Optionally, the ion implantation is abnormal, and a current value of the emission current is lower than that of normal ion implantation.
Optionally, corresponding hardware of the ion implantation tool is adjusted or the ion beam is trimmed based on the comparison result.
Optionally, the real-time variation curve displays at least two scanning periods.
As described above, the ion implantation process monitoring method of the present invention uses the log file of the ion implantation machine to read the data of the scanning position and the emission current of the ion beam in the log of the ion implantation machine in real time during the ion implantation process, draw the visible real-time variation curve of the emission current and the scanning position, provide the reference curve drawn based on the data of the scanning position and the emission current of the ion beam when the ion is not implanted into the wafer, compare the real-time variation curve with the reference curve, and determine the ion implantation state of the ion implantation machine according to the comparison result to determine whether the machine is working normally, so that the worker can timely regulate and control the corresponding hardware of the ion implantation machine or regulate and control the ion beam, thereby avoiding the process of measuring the ion implantation process monitoring data offline, due to the problem of hysteresis of offline monitoring of the ion implantation process, batch bad products are generated online, and then great economic loss is caused, so that the method has high industrial utilization value.
Drawings
Fig. 1 is a flow chart illustrating a method for monitoring an ion implantation process according to the present invention.
Fig. 2 is a schematic view of an ion implantation process of the method for monitoring an ion implantation process according to the present invention.
Fig. 3 is a schematic view showing charge neutralization of ions emitted from a plasma emission gun according to the method for monitoring an ion implantation process of the present invention.
Fig. 4 is a schematic diagram of an ion beam with up and down scanning of a wafer for monitoring an ion implantation process according to the present invention.
Fig. 5 is a graph showing a real-time variation of emission current generated during a simulated normal ion implantation process in accordance with the ion implantation process monitoring method of the present invention.
Fig. 6 is a graph showing real-time variation of on-line normal ion implantation in the monitoring method for ion implantation process according to the present invention.
Fig. 7 is a graph showing a reference curve of the monitoring method of the ion implantation process according to the present invention.
Fig. 8 is a graph showing a real-time variation from normal mutation to abnormal in the on-line ion implantation according to the ion implantation process monitoring method of the present invention.
The reference numbers illustrate: 1 wafer, 11 focalizer, 2 ion beam.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 8. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
The present embodiment provides an ion implantation process monitoring method, as shown in fig. 1, which is a flowchart of the ion implantation process monitoring method, and includes the following steps:
s1: providing a wafer to be ion implanted, and forming a protective layer on the upper surface of the wafer;
s2: forming a light resistance layer on the upper surface of the protective layer, fixing the wafer on a target disc of an ion implantation machine, and performing ion implantation on the wafer based on the light resistance layer;
s3: reading and exporting data of emission current generated by a plasma emission gun at the scanning position and the corresponding scanning position of the ion beam in a working log of the ion implantation machine in real time, and drawing a real-time change curve of the scanning position and the emission current of the ion beam based on the exported data;
s4: providing a reference curve, wherein the reference curve is drawn based on the scanning position of the ion beam and emission current data when ions are not implanted into the wafer, comparing the real-time change curve with the reference curve, and judging the real-time working state of ion implantation of the ion implantation machine according to the comparison result so as to determine whether the machine works normally.
Referring to fig. 2, the steps S1 and S2 are executed: providing a wafer 1 to be ion implanted, and forming a protection layer (not shown) on the upper surface of the wafer 1; a photoresist layer (not shown) is formed on the upper surface of the protection layer, the wafer 1 is fixed on a target disk (not shown) of an ion implantation machine, and ion implantation is performed on the wafer based on the photoresist layer.
Specifically, the material of the wafer 1 includes silicon, silicon germanium, silicon carbide, or other suitable materials. In this embodiment, silicon is used as the material of the wafer 1.
Specifically, the size of the wafer 1 may be selected according to practical situations, and is not limited herein.
Specifically, the wafer 1 may be a doped wafer, a wafer that needs to be ion implanted again, or an undoped wafer.
By way of example, the protective layer includes an oxide layer or other suitable thin film layer.
Specifically, the bonding force between the photoresist layer and the wafer 1 is weak, so that the protective layer is used for enhancing the adhesion of the photoresist layer, and simultaneously, the protective layer is also used for preventing the wafer 1 from being polluted by the photoresist layer.
Specifically, after the photoresist layer is formed, ion implantation may be performed on the wafer 1 based on the unpatterned photoresist layer without patterning the photoresist layer.
As an example, after the forming of the photoresist layer and before the ion implantation, the method further includes a step of patterning the photoresist layer.
Specifically, the photoresist layer is patterned to obtain a region to be subjected to ion implantation, and then an ion implantation process can be performed on the region to be subjected to ion implantation.
Specifically, a fixing device is arranged on the target disc, and when the wafer 1 is placed on the target disc, the fixing device on the target disc is opened, so that the wafer 1 can be fixed on the target disc.
Specifically, before ion implantation, the ion implantation parameters in the ion implantation machine need to be set, so that the ion implantation machine performs an ion implantation process according to the set parameters.
As an example, during ion implantation, the ion beam 2 scans the wafer 1 up and down.
Specifically, after the ion beam 2 is emitted from the plasma emission gun, the ion beam 2 is adjusted into a band shape by the ion beam focuser 11.
As an example, the length of the ion beam 2 in the direction perpendicular to the scanning direction is not smaller than the diameter of the wafer 1, and the length of the ion beam 2 in the scanning direction is smaller than the diameter of the wafer 1.
Specifically, in the ion implantation process, the up-and-down scanning of the ion beam 2 is realized by the up-and-down movement of the target plate, that is, the incident direction and position of the ion beam 2 are unchanged, and the target plate moves up and down to realize the up-and-down scanning of the ion beam 2 on the wafer 1 on the target plate.
Referring to fig. 3 to 6, the steps S3 and S4 are executed: reading the scanning position of the ion band 2 in the working log of the ion implantation machine and emission current data generated by a plasma emission gun corresponding to the scanning position in real time, deriving the data, and drawing a real-time change curve of the scanning position of the ion band 2 and the emission current based on the derived data; providing a reference curve, wherein the reference curve is drawn based on the scanning position of the ion beam and emission current data when ions are not implanted into the wafer 1, comparing the real-time change curve with the reference curve, and judging the real-time working state of ion implantation of the ion implantation machine according to the comparison result so as to determine whether the machine works normally.
As an example, as shown in fig. 3, a schematic diagram of charge neutralization for emitting ions by the plasma emission gun is shown, wherein the emission current includes a current generated by neutralizing charges on the surface of the wafer 1 and a current generated by consuming charges by a machine.
Specifically, in the process of ion implantation, ions entering the wafer 1 are positive ions, and when the ions enter the wafer 1 or the photoresist layer, charge accumulation occurs in the photoresist layer or the wafer 1, and electrons need to be emitted to the surface of the wafer 1 to neutralize positive charges on the surface of the wafer 1 or the photoresist layer, so as to generate a current.
Specifically, when the wafer 1 or the photoresist layer has too much positive charges, the same charges repel each other, and the incident ions are subjected to a repulsive force, so that the incident ions deviate from the incident orbit and cannot be neutralized with electrons, and no current is generated.
As an example, during the normal ion implantation, the real-time variation curve changes like a periodic variation.
Specifically, as shown in fig. 4 and fig. 5, which are a schematic diagram of the ion beam 2 scanning the wafer 1 up and down and a real-time variation curve of the emission current generated in the process of simulating ion implantation, when the ion implantation is not abnormal, because the ion beam 2 is in a band shape, and the length of the ion beam 2 in the direction perpendicular to the scanning direction is not less than the diameter of the wafer 1, and the wafer 1 is in a circular shape, in the process of scanning up and down, the contact area between the ion beam 2 and the wafer 1 at the top of the wafer 1 and at the bottom of the wafer 1 is smaller, so that fewer ions enter the wafer 1 or the surface of the photoresist layer, and fewer charges participate in neutralization, and in the process of approaching the middle of the wafer 1, the contact area between the wafer 1 and the ion beam 2 is gradually increased, and the ions entering the wafer 1 or the surface of the photoresist layer are gradually increased, the charge participating in the neutralization is gradually increased, so that the current change curve of the emission current shows periodic-like changes in the whole scanning process.
As an example, as shown in fig. 6, the graph is a trend graph of the real-time variation curve in an online normal ion implantation process, in the normal ion implantation process, a peak value of the scanning position curve in the graph is a top position of the wafer 1, a valley value of the scanning position curve is a bottom position of the wafer 1, an intermediate position between the peak value and the valley value is an intermediate position of the wafer 1, and the emission current value corresponding to the ion beam 2 when scanning to the intermediate portion of the wafer 1 is greater than the emission current value corresponding to the ion beam 2 when scanning to the top of the wafer 1 and the bottom of the wafer 1.
As an example, the ion implantation is abnormal, and the current value of the emission current is lower than that of the normal ion implantation.
Specifically, referring to the graphs of FIG. 7 and FIG. 8, respectively, and the real-time variation graph of the on-line ion implantation from normal mutation to abnormal mutation, wherein, the peak value of the scanning position curve is the top position of the wafer 1, the valley value is the bottom position of the wafer 1, the middle position between the peak value and the valley value is the middle position of the wafer 1, when the ion implantation is abnormal, the beam current of the ion beam 2 is deflected due to like charges repelling each other caused by charge accumulation, resulting in a small portion of incident ions being implanted or not implanted into the wafer 1, the emission current is only the current consumed by the ion implanter, and then the current value of the emission current collected in the log is lower than that of the emission current during normal ion implantation.
As an example, corresponding hardware of the ion implanter stage is adjusted or the ion beam is trimmed based on the comparison.
Specifically, when the ion implantation process is abnormal, since the ions are not implanted into the wafer 1 or the photoresist layer, the emission current is obviously lower than the normal value, and based on the comparison result, the corresponding hardware of the ion implantation machine is adjusted in time or the ion beam 2 is finely adjusted, so that the amount of the ion implantation defective products generated on line is reduced, the yield of the ion implantation is improved, and the production loss is reduced.
Specifically, the method for reading and deriving the scanning position of the ion beam 2 and the emission current data generated by the plasma emission gun in the log of the ion implanter in real time may be based on existing software or may be based on a real-time reading program. In this embodiment, the scanning position data and the emission current data in the log of the ion implantation machine are read and derived based on a real-time reading program.
Specifically, the process of drawing the derived data into the real-time change curve graph may be based on existing real-time drawing software or may be based on a real-time drawing program. In this embodiment, based on the data read by the real-time reading program, the real-time change curve graph is drawn by using the real-time drawing program, and the drawn graph is output to the monitoring screen in real time, so that a worker can monitor the ion implantation state of the ion implantation process on line in real time, the problem of hysteresis in monitoring the ion implantation process is avoided, the generation of batch defective products on line is avoided, the yield of products in the ion implantation process is improved, and the production loss is reduced.
Specifically, the emission current curve in which ions are not implanted into the wafer 1 refers to a curve drawn based on the scanning position of the ion beam 2 and the emission current data in the log of the ion implantation machine, and the curve is used as a reference curve, in which the ions emitted from the plasma emission gun are difficult to be implanted into the wafer 1 or the photoresist layer due to repulsion of like charges after positive charges are accumulated in the wafer 1 or the photoresist layer.
As an example, the real-time variation curve shows at least two scanning cycles, where the scanning cycle is a time period from the ion beam 2 to the top (bottom) of the wafer 1 to the beginning of the scanning of the next wafer after the scanning of the next wafer is finished downwards (upwards).
Specifically, in the process of ion implantation of the wafer 1 in the same batch, the process parameters, the photoresist conditions and the wafer of the ion implantation process are the same, and the variation curves of the two periods can be compared with the variation conditions of the curves of the two periods, so that the real-time variation condition of the ion implantation process can be better monitored.
The ion implantation process monitoring method of the embodiment utilizes log file information generated by an ion implantation machine in the ion implantation process, reads and derives the data of the scanning position of the ion beam 2 and the emission current in the log file of the ion implantation machine in real time in the ion implantation process, draws the real-time curve change diagram of the emission current and the scanning position of the ion beam 2 according to the real-time read data, compares the obtained real-time change curve with the reference curve, judges the ion implantation state of the ion implantation machine according to the comparison result to determine whether the machine works normally or not, is convenient to timely regulate and control corresponding hardware of the ion implantation machine or regulate and control the ion beam, and avoids the problem of lag in the monitoring of the ion implantation process in the process of measuring data off line, the yield of the ion implantation process is improved, a large number of bad products are prevented from being generated on line, and the production loss is reduced.
In summary, the ion implantation process monitoring method of the present invention utilizes data in a log file generated during ion implantation performed by an ion implantation machine, reads and derives data information of a transmitting current and a scanning position of an ion beam in the ion implantation process from the log file in real time, draws a real-time variation curve of the transmitting current and the scanning position of the ion beam based on the real-time transmitting current and the data information of the scanning position of the ion beam in the derived data, outputs the drawn real-time variation curve, compares the real-time variation curve with a reference curve to determine an ion implantation state of the ion implantation machine in real time and confirm whether the machine is working normally, so that a worker can adjust corresponding hardware of the ion implantation machine or finely adjust the ion beam in time according to the determination result, thereby avoiding a problem of hysteresis due to monitoring of the ion implantation process, the batch of bad products are generated on the line, the yield of the ion implantation process is improved, and the production loss is reduced. Therefore, the present invention effectively overcomes various disadvantages of the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An ion implantation process monitoring method is characterized by comprising the following steps:
providing a wafer to be ion implanted, and forming a protective layer on the upper surface of the wafer;
forming a light resistance layer on the upper surface of the protective layer, fixing the wafer on a target disc of an ion implantation machine, and performing ion implantation on the wafer based on the light resistance layer;
reading and exporting data of a scanning position of an ion belt and emission current generated by a plasma emission gun corresponding to the scanning position in a working log of the ion implantation machine in real time, and drawing a real-time change curve of the scanning position of the ion belt and the emission current based on the exported data;
providing a reference curve, wherein the reference curve is drawn based on the scanning position of the ion beam band and emission current data when ions are not implanted into the wafer, comparing the real-time change curve with the reference curve, and judging the real-time working state of ion implantation of the ion implantation machine according to the comparison result to determine whether the machine works normally.
2. The method of claim 1, wherein: after the photoresist layer is formed and before ion implantation, the method also comprises a step of patterning the photoresist layer.
3. The method of claim 1, wherein: in the process of ion implantation, the ion beam scans the wafer up and down.
4. The method of claim 1, wherein: the length of the ion beam in the direction perpendicular to the scanning direction is not less than the diameter of the wafer, and the length of the ion beam in the scanning direction is less than the diameter of the wafer.
5. The method of claim 1, wherein: the emission current includes a current generated by neutralizing charges on the surface of the wafer and a current generated by consuming charges by a machine.
6. The method of claim 1, wherein: in the normal ion implantation process, the real-time change curve is in quasi-periodic change.
7. The method of claim 1, wherein: in the normal ion implantation process, the emission current value corresponding to the ion beam when the ion beam scans to the middle part of the wafer is larger than the emission current value corresponding to the ion beam when the ion beam scans to the top part of the wafer and the bottom part of the wafer.
8. The method of claim 1, wherein: the ion implantation is abnormal, and the current value of the emission current is lower than that of the normal ion implantation.
9. The method of claim 1, wherein: adjusting corresponding hardware of the ion implantation machine or fine-tuning the ion beam based on the comparison result.
10. The method of claim 1, wherein: the real-time variation curve displays at least two scanning periods.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070200075A1 (en) * | 2006-02-24 | 2007-08-30 | Varian Semiconductor Equipment Associates, Inc. | Ion beam current monitoring |
| US20140242732A1 (en) * | 2013-02-26 | 2014-08-28 | Kabushiki Kaisha Toshiba | Ion implantation apparatus and method of determining state of ion implantation apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070200075A1 (en) * | 2006-02-24 | 2007-08-30 | Varian Semiconductor Equipment Associates, Inc. | Ion beam current monitoring |
| US20140242732A1 (en) * | 2013-02-26 | 2014-08-28 | Kabushiki Kaisha Toshiba | Ion implantation apparatus and method of determining state of ion implantation apparatus |
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Address after: 510700 No. 28, Fenghuang fifth road, Huangpu District, Guangzhou, Guangdong Patentee after: Yuexin Semiconductor Technology Co.,Ltd. Address before: 510700 No. 28, Fenghuang fifth road, Huangpu District, Guangzhou, Guangdong Patentee before: Guangzhou Yuexin Semiconductor Technology Co.,Ltd. |