CN115072653A - Display panel, display device, three-dimensional microstructure device and preparation method thereof - Google Patents
Display panel, display device, three-dimensional microstructure device and preparation method thereof Download PDFInfo
- Publication number
- CN115072653A CN115072653A CN202210673143.3A CN202210673143A CN115072653A CN 115072653 A CN115072653 A CN 115072653A CN 202210673143 A CN202210673143 A CN 202210673143A CN 115072653 A CN115072653 A CN 115072653A
- Authority
- CN
- China
- Prior art keywords
- layer
- thin film
- film actuator
- functional layer
- functional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00166—Electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a display panel, a display device, a three-dimensional microstructure device and a preparation method thereof; the preparation method comprises the following steps: preparing a functional layer, a thin film actuator and a device layer, wherein the thin film actuator is positioned between the functional layer and the device layer; performing a set process to expand the thin film actuator to move the functional layer away from the device layer; processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device. The method can improve the process precision of the three-dimensional micro-mechanical structure and ensure the product performance and the yield of the three-dimensional micro-structural device.
Description
Technical Field
The application relates to the technical field of micro electro mechanical systems, in particular to a display panel, a display device, a three-dimensional microstructure device and a preparation method thereof.
Background
MEMS, Micro Electro Mechanical Systems (MEMS), focuses on ultra-precision machining, and refers to individual devices with dimensions on the order of microns or even nanometers. MEMS is developed based on semiconductor manufacturing technology, and combines technologies such as photolithography, etching, thin film, LIGA (lithograph, galvanoforming, and abbormung, i.e., photolithography, electroforming, and injection molding), silicon micromachining, non-silicon micromachining, and precision machining to produce high-technology electromechanical devices.
The three-dimensional micro-mechanical structure generally has the characteristics of small volume, light weight, high functional integration level and the like, and has wide application in the fields of micro-sensing, optical fiber communication, micro-mechanical structures, micro-power micro-energy sources, micro-analysis, micro-actuators and the like. Such a complicated three-dimensional microstructure can be realized by a multiple-time glue coating and re-exposure method, a gray tone mask (JP 2017/038919) lithography method, or a bonding process. However, the multiple gluing and re-exposure process involves upper and lower layer alignment, and meanwhile, factors such as mutual solubility of photoresist and the like are also considered; the gray tone mask process has high manufacturing cost and great technical difficulty, and generally needs to be correspondingly coated with thick glue, so the process is complex; the bonding process cannot correspond to a multi-layer thin film type three-dimensional micro-mechanical structure. Generally speaking, the three processes are limited by the limited film forming uniformity and the incapability of locally adjusting the light source intensity distribution and the exposure focal length of the exposure machine, so that the process precision of the three-dimensional micro-mechanical structure is influenced.
Therefore, how to improve the process precision of the three-dimensional micro-mechanical structure becomes a problem to be solved in the field of the MEMS at present.
Disclosure of Invention
In view of the above problems, the present invention provides a display panel, a display device, a three-dimensional microstructure device and a manufacturing method thereof, so as to improve the process precision and the product yield of a three-dimensional micromechanical structure.
In a first aspect, a method for manufacturing a three-dimensional microstructure device is provided, including:
preparing a functional layer, a thin film actuator and a device layer, wherein the thin film actuator is positioned between the functional layer and the device layer;
performing a set process to expand the thin film actuator to move the functional layer away from the device layer;
processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device.
Optionally, the material of the film actuator is one of a thermal response type shape memory material, a photo-induced shape memory material, a pH-induced shape memory material, an electro-induced shape memory material and a magneto-induced shape memory material;
the set process is a corresponding process associated with the material of the thin film actuator; the corresponding process comprises a heating process, an illumination process, a pH value adjusting process, an electric field applying process and a magnetic field applying process.
Optionally, the thermal response type shape memory material is one of polyethylene-vinyl acetate, polyurethane, polycaprolactone and copolymers thereof.
Optionally, the performing the setting process to expand the thin film actuator to move the functional layer away from the device layer includes:
executing a setting process to enable the thin film actuator to expand, push the contact area of the device layer away from the functional layer, and enable the contact area and the peripheral area to tend to be in the same plane;
the contact area is an area where the device layer is in contact with the thin film actuator, and the peripheral area is an area where the device layer is connected with the contact area.
Optionally, the preparing the functional layer, the thin film actuator and the device layer includes:
preparing the functional layer and detecting a depressed region in the functional layer;
forming the thin film actuator in the recessed region;
forming the device layer on the functional layer on which the thin film actuator is formed.
Optionally, the three-dimensional microstructure device is a bottom electrode in a display panel;
the preparing the functional layer and detecting the depressed regions in the functional layer includes: providing a first substrate, and forming a dielectric layer on the first substrate; detecting a depressed area of the dielectric layer; the first substrate base plate and the dielectric layer are the functional layers;
the forming the device layer on the functional layer on which the thin film actuator is formed includes:
forming an electrode material layer as the device layer on the functional layer on which the thin film actuator is formed, and forming a photoresist layer on the electrode material layer;
the executing the setting process to expand the thin film actuator, push the contact area of the device layer away from the functional layer, and make the contact area and the peripheral area approach to the same plane, includes:
pre-baking the first substrate to enable the film actuator to be heated to generate expansion deformation, push the electrode material layer on the film actuator to be away from the functional layer, and enable the electrode material layer on the film actuator and the electrode material layer on the peripheral area to tend to be in the same plane;
processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device, including:
and exposing, developing and post-baking the photoresist layer, and etching the electrode material layer to obtain the bottom electrode.
Optionally, the preparing the functional layer, the thin film actuator and the device layer includes:
preparing the functional layer and determining a step area in the functional layer;
forming the thin film actuator on a lower side of the stepped region;
forming the device layer on the step region where the thin film actuator is formed.
Optionally, the three-dimensional microstructure device is a cantilever beam in a display panel;
the preparing the functional layer and determining a step region in the functional layer includes:
providing a second substrate, and preparing an organic film layer in a set area of the second substrate, wherein the second substrate and the organic film layer are the functional layer; the interface area of the organic film layer and the second substrate base plate is the step area;
the forming the device layer on the step region where the thin film actuator is formed includes:
forming a cantilever beam material layer on the step area on which the thin film actuator is formed as the device layer, and forming a photoresist layer on the cantilever beam material layer;
the executing the setting process expands the thin film actuator, and the contact area of the device layer is far away from the functional layer and is approximately in the same plane with the peripheral area, and the executing the setting process comprises the following steps:
pre-baking the second substrate to enable the film actuator to be heated to generate expansion deformation, push the cantilever beam material layer on the film actuator to be away from the functional layer, and enable the cantilever beam material layer on the film actuator and the cantilever beam material layer on the higher side of the step area to tend to be in the same plane;
processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device, including:
and exposing, developing and post-baking the photoresist layer, and etching the cantilever beam material layer to obtain the cantilever beam.
Optionally, the performing the setting process to expand the thin film actuator to move the functional layer away from the device layer includes:
performing a set process expands the thin film actuator to isolate the functional layer from the device layer.
Optionally, the three-dimensional microstructure device is a suspended film bridge in a display panel;
the preparation of the functional layer, the thin film actuator and the device layer comprises the following steps:
providing a third substrate, and forming an anchor point mechanism and a sacrificial layer in an AA area of the third substrate, wherein the third substrate and the sacrificial layer are the functional layers; forming a thin film actuator on the sacrificial layer; forming a film bridge layer as the device layer over the thin film actuator and the anchor mechanism;
the performing a set process to expand the thin film actuator to isolate the functional layer from the device layer includes:
heating the third substrate base plate to enable the thin film actuator to be heated to generate expansion deformation, so that the sacrificial layer is isolated from the film bridge layer;
processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device, including:
releasing the sacrificial layer such that the membrane bridge layer and the anchor mechanism form the suspended membrane bridge.
Based on the same inventive concept, in a second aspect, there is provided a three-dimensional microstructure device, including: a substrate, a film actuator and a three-dimensional microstructure; the thin film actuator is positioned between the substrate and the three-dimensional microstructure or positioned inside the three-dimensional microstructure; the thin film actuator expands during formation of the three-dimensional microstructure device.
Based on the same inventive concept, in a third aspect, there is provided a display panel including the three-dimensional microstructure device provided in the second aspect.
Based on the same inventive concept, in a fourth aspect, there is provided a display device including the display panel provided in the third aspect.
The technical scheme provided by the embodiment of the invention at least has the following technical effects or advantages:
the invention provides a preparation method of a three-dimensional microstructure device, which is characterized in that a thin film actuator is formed between a functional layer and a device layer, and then the thin film actuator generates expansion micro-deformation through a set process to enable the functional layer to be far away from the device layer, so that when the functional layer or the device layer is processed subsequently to prepare the three-dimensional microstructure device, the expanded thin film actuator can play a role in repairing the film forming uniformity of the functional layer, compensating exposure intensity distribution and exposure focal plane, improving the isolation effect between the device layer and the functional layer and the like, thereby improving the process precision of the three-dimensional micro-mechanical structure and ensuring the product performance and the yield of the three-dimensional microstructure device.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings.
In the drawings:
fig. 1 is a schematic flow chart illustrating a method for manufacturing a three-dimensional microstructure device according to an embodiment of the present invention;
FIG. 2A shows a schematic diagram of a recessed region on a dielectric layer in the prior art;
FIG. 2B shows a schematic view of a section BB' in FIG. 2A;
FIG. 2C shows a schematic flow chart of a preparation process of example 1 of the present invention;
FIG. 2D is a schematic diagram showing the formation of a thin film actuator between a recessed region of a dielectric layer and a layer of electrode material according to example 1 of the present invention;
FIG. 2E is a schematic view of the membrane actuator of example 1 of the present invention after being subjected to expansion deformation;
FIG. 3A shows a schematic diagram of a prior art cantilever beam structure;
FIG. 3B shows a schematic view of a section BB' in FIG. 3A;
FIG. 3C shows a schematic flow chart of a preparation method of example 2 of the present invention;
FIG. 3D is a schematic view showing the formation of a thin film actuator on the lower side of the stepped region according to embodiment 2 of the present invention;
FIG. 3E is a schematic view of the membrane actuator of example 2 of the present invention after being subjected to expansion deformation;
FIG. 4A shows a schematic diagram of a prior art flying membrane bridge;
FIG. 4B shows a schematic view of a section BB' in FIG. 4A;
FIG. 4C shows a schematic flow chart of a preparation method of example 3 of the present invention;
FIG. 4D is a schematic diagram showing the formation of a thin film actuator between a sacrificial layer and a film bridge layer according to embodiment 3 of the present invention;
FIG. 4E is a schematic view of the membrane actuator of example 3 of the present invention after expansion deformation;
description of reference numerals:
1. a functional layer; 11. a first substrate base plate; 12. a dielectric layer; 13. a second substrate base plate; 14. an organic film layer; 15. a third substrate base plate; 16. a sacrificial layer; 17. an anchor point mechanism; 2. a film actuator; 3. a device layer; 31. a layer of electrode material; 32. a cantilever beam material layer; 33. a membrane bridge layer; 4. and a photoresist layer.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
At present, the preparation of the micro-mechanical structure mainly utilizes a semiconductor film processing technology, including patterning processing by photoetching and etching on the basis of film deposition, and some movable micro-mechanical structures also involve releasing corresponding structural units from the front side or the back side by technologies such as corrosion and the like. Because of the self uniformity and stability of the processes of thin film deposition technology such as magnetron sputtering, chemical vapor deposition, sol-gel method, pulse laser deposition and the like, the uniformity of formed films is limited, the photoresist is unfolded along with the shape after each photoresist coating, the surface of the photoresist has nanometer or even micron-scale nuances, and simultaneously, because the conditions that the light source intensity distribution of an exposure machine and the exposure focal length cannot be locally adjusted and the like, the micron-scale fine structure, especially the pattern with a complex three-dimensional structure, is difficult to realize one-time exposure forming, and needs to be processed by a high aspect ratio processing technology or a body processing technology, so the process cost is obviously increased.
Therefore, in order to solve the above problems and improve the process precision of the three-dimensional microstructure, as shown in fig. 1, the present invention provides a method for manufacturing a three-dimensional microstructure device, the overall concept of which includes steps S1 to S3, specifically as follows:
s1: preparing a functional layer, a thin film actuator and a device layer, wherein the thin film actuator is positioned between the functional layer and the device layer.
Specifically, the functional layer in this embodiment may be interpreted as a base portion in a three-dimensional microstructure device, and the functional layer may be a substrate, such as a silicon substrate; may be a substrate, such as a transparent glass substrate; an insulating layer, a dielectric layer, an organic material layer, a sacrificial layer, or the like formed on the substrate or the base plate may be further included, which is not particularly limited.
The device layer may be interpreted as a critical material layer to form a three-dimensional microstructure. For example, the source and drain metal layers may be device layers of a thin film transistor, the electrode material layer may be a device layer of a bottom electrode in a display panel, the cantilever material layer may be a device layer of a cantilever in the display panel, and the like.
The film actuator belongs to a micro actuator, and is a micro structure capable of converting other forms of energy, such as light energy, heat energy and electromagnetic energy into mechanical energy, and the mechanical energy can be output in an expansion deformation mode when the film actuator is subjected to type-related process treatment, such as illumination, heating or loading of an electric field and a magnetic field. Therefore, the thin film actuator is a mechanism formed by a thin film material with a shape memory effect, and different types of shape memory materials, such as a thermal response type shape memory material, a photo-induced shape memory material, a pH-induced shape memory material, an electro-induced shape memory material and a magneto-induced shape memory material, can be used for forming the thin film actuator required by the embodiment.
The thin film actuators may be single or double layer organic thin films or other thin films having a shape memory effect. For example, for a thermally responsive shape memory material, a preferred choice is a semicrystalline polymer with a reversible shape memory effect, including: polyethylene-vinyl acetate, polyurethane, polycaprolactone, and copolymers thereof. The method specifically comprises the following steps: polyacrylic acid-b-poly-N-isopropylacrylamide, polymethacrylic acid-b-poly-N-isopropylacrylamide, polymethacrylol-b-poly-N-isopropylacrylamide and other polymer materials. The thermal response type thin film actuator can be prepared by a semiconductor film forming process such as spin coating or atomic layer deposition.
For photo-induced shape memory materials, which can be divided into photochemical reaction type and photothermal effect type, the materials selected include: acrylic acid ester copolymer grafted with cinnamic acid group, acrylic acid ester copolymer or polyurethane, carbon nanotube filled thermoplastic elastomer, gold nanorod introduced poly (tert-butyl acrylate) or poly (amino acid ester)
For pH-induced shape memory materials, alternative materials include: cellulose nanofibril polyurethane, polyacrylamide with dansyl amide groups added, cellulose nanofibril composite polyurethane modified by phosphorylation, and the like.
For an electro-shape memory material, alternative materials include: carbon black filled shape memory thermoset polystyrene composites, carbon nanotube filled shape memory polyurethane composites, carbon nanotube filled shape memory thermoset polyurethane composites, and the like.
For magnetic shape memory materials, alternative materials include: by addition of magnetic particles, e.g. gamma-Fe 2 O 3 ，Fe 3 O 4 NdFeB polylactic acid, polycaprolactone, polyurethane, and the like.
S2: performing a set process expands the thin film actuator to move the functional layer away from the device layer.
When the film actuator with the shape memory effect is subjected to a set process corresponding to the shape memory type of the film actuator, expansion deformation is generated, and the deformation enables the functional layer to be far away from the device layer.
For example, for a thermal response type thin film actuator, the corresponding process is heating, for example, when a display panel is prepared, a pre-baking step and a post-baking step in the photolithography process can be used as the corresponding processes, so that the thin film actuator generates tiny expansion deformation under the induction of thermal stimulation of the pre-baking step and the post-baking step; for the photoresponse type film actuator, the corresponding process is starting illumination, so that the film actuator generates tiny expansion deformation under specific illumination intensity; for the pH response type film actuator, the corresponding process is to adjust the pH value of the environment so that the film actuator generates tiny expansion deformation within a specific pH value range; for the electric response type thin film actuator, the corresponding process is to apply an electric field, so that the thin film actuator generates tiny expansion deformation under the specific electric field intensity; the corresponding process of the magnetic response type thin film actuator is to apply a magnetic field so that the thin film actuator generates tiny expansion deformation under a specific magnetic field strength.
The functional layer is far from the device layer, and the implementation manner of the functional layer may be that the thin film actuator pushes the functional layer to be far from the device layer, that is, the motion body is the functional layer, or the thin film actuator pushes the device layer to be far from the functional layer, that is, the motion body is the device layer; on the other hand, a partial region of the functional layer may be distant from the device layer, or the entire region of the functional layer may be distant from the device layer, which is not particularly limited.
Types of functional layers remote from the device layers include, but are not limited to:
type 1: alignment of device layers with different regions having different heights. The device layers are aligned through the expansion of the actuator film, so that the problem of uneven light source intensity distribution of an exposure machine can be solved, or the defect caused by uneven film forming of the MEMS is repaired, thereby improving the exposure uniformity and ensuring the performance or yield of the three-dimensional microstructure device; the problem that the exposure focal length of an exposure machine cannot be locally adjusted can be solved, the exposure forming times of the three-dimensional microstructure device in the preparation process are reduced, the exposure focal length is compensated, and the exposure quality is improved.
Type 2: the device layer is isolated from the functional layer in space, and specifically comprises the following components: performing a set process expands the thin film actuator to isolate the functional layer from the device layer. The isolation quality of the device layer and the functional layer is improved through the expansion of the actuator film, and the phenomenon that the performance of the three-dimensional microstructure device is affected due to adhesion between the device layer and the isolation layer is avoided.
For type 1, it includes but is not limited to: exposure uniformity compensation and exposure focal plane compensation.
For case 1: the exposure uniformity compensation step S1 specifically includes:
preparing a functional layer and detecting a depressed region in the functional layer; forming a thin film actuator in the recessed region; a device layer is formed on the functional layer on which the thin film actuator is formed.
Specifically, limited by the uniformity of the film forming process and the intensity distribution of the light source of the exposure machine, some fine three-micro mechanical structures have local height fluctuation after the photoresist is coated, so that the local areas are under exposed and the local areas are over exposed. To solve this problem, the present case forms a thin film actuator in the recessed region of the functional layer.
For case 2: compensation of the exposure focal plane, wherein the step S1 specifically comprises:
preparing a functional layer and determining a step area in the functional layer; forming a thin film actuator on a lower side of the stepped region; and forming a device layer on the step region where the thin film actuator is formed.
Specifically, because the current exposure processes are all planar processes, complex three-dimensional micro-mechanical structures generally need to be exposed on films with different heights at the same time, and the exposure focal length of an exposure machine cannot be locally adjusted, part of the patterns can be out of focus and become blurred, and the problem of auto focus Error is caused. To solve this problem, the present case prepares the film actuator at the lower side of the stepped region, and performs compensation of the focal plane height by the expansion deformation of the film actuator.
The step S2 of the above two cases corresponds to the following:
executing a setting process to expand the film actuator, pushing the contact area of the device layer away from the functional layer, and enabling the contact area and the peripheral area to tend to be on the same plane; the contact area is an area where the device layer is in contact with the thin film actuator, and the peripheral area is an area where the device layer is connected with the contact area.
The trend towards the same plane means that the contact area of the device layer is aligned with the peripheral area as much as possible, or the height difference between the contact area and the peripheral area is smaller than a set threshold value.
S3: processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device.
The functional layer and the device layer are kept away from each other, the setting process can be continuously executed, or the subsequent process can be quickly executed after the setting process is finished, and the preparation of the three-dimensional microstructure device is finished before the expansion deformation of the film actuator is recovered.
The embodiment provides a method for preparing a three-dimensional microstructure device, wherein a thin film actuator is formed between a functional layer and a device layer, and then the thin film actuator generates expansion micro-deformation through a set process to enable the functional layer to be far away from the device layer, so that when the functional layer or the device layer is subsequently processed to prepare the three-dimensional microstructure device, the expanded thin film actuator can play a role in repairing the film forming uniformity of the functional layer, compensating exposure intensity distribution and exposure focal plane, or improving the isolation effect between the device layer and the functional layer, and the like, thereby improving the process precision of the three-dimensional micro-mechanical structure and ensuring the product performance and the yield of the micro-electromechanical system.
In order to more fully explain the above solution, the following description is made with reference to a specific application scenario of the solution of the present invention in the field of display panels:
example 1: a bottom electrode in a display panel is prepared.
Before preparing a bottom electrode, an array substrate in a display panel is deposited with a dielectric layer 12: SiO, thickness of about several hundred nanometers, and then an electrode material layer 31: Ti/Al/Ti. In the prior art, due to the limitation of the film forming process, a plurality of defects are generated on the surface of the dielectric layer 12 and appear as recessed regions, as shown by the cross section of the oval region in fig. 2A and the oval region in fig. 2B. If the repair is not carried out, the photoresist flows along with the shape after the glue is coated, the defects are generated after the glue is cured, and the defects are possibly amplified even in the electrode metal deposition process, so that the subsequent process is adversely affected.
In order to solve this problem, the specific scheme adopted by this embodiment is shown in fig. 2C, and includes the following steps:
s111: providing a first substrate 11, and forming a dielectric layer 12 on the first substrate 11; detecting a recessed region of the dielectric layer 12; the first substrate 11 and the dielectric layer 12 are functional layers 1;
specifically, a glass substrate may be selected as the first substrate 11, a layer of 800nm SiO is deposited on the first substrate 11 by a Plasma Enhanced Chemical Vapor Deposition (PEVCD), and then a defect detection is performed on the surface of the SiO by using a measuring tool such as a film thickness measuring instrument and a microscope to determine the recessed region shown in fig. 2A.
S112: forming a thin film actuator 2 in the recessed area;
as shown in fig. 2D, the thin film actuator 2 is patterned in the recessed region, and the thin film can be formed by Spin-coating (Spin-coating) or Atomic Layer Deposition (ALD). The film actuator 2 of the present embodiment is a thermal responsive type, and the material thereof is polyacrylic acid-b-poly N-isopropylacrylamide. The thickness of the film can be adjusted according to the defect condition, such as 2 nm-900 nm.
S113: forming an electrode material layer 31 as a device layer 3 on the functional layer 1 on which the thin film actuator 2 is formed, and forming a photoresist layer 4 on the electrode material layer 31;
specifically, the deposition method of the electrode material layer 31 may be Sputter magnetron sputtering or evaporation deposition, the deposition material is Ti/Al/Ti, and an exemplary thickness is 50nm/700nm/50 nm. A photoresist is then coated on the electrode material layer 31 to form a photoresist layer 4. Slit die or spin coating methods may be used, with an exemplary thickness of 1.5 μm.
S21: prebaking the first substrate 11 to make the film actuator 2 expand and deform when heated, pushing the electrode material layer 31 on the film actuator 2 away from the functional layer 1, and making the electrode material layer 31 on the film actuator 2 and the electrode material layer 31 on the peripheral area approach to the same plane;
specifically, the pre-baking temperature adopts the current pre-baking 110 ℃ of the display panel and lasts for 150 s. The thin film actuator 2 is heated to undergo rapid expansion deformation, the deformation amount of which is about several nanometers to several hundred nanometers, so that the electrode material layer 31 and the photoresist layer 4 in the recessed region and the peripheral normal region tend to be in the same plane, as shown in fig. 2E. Because the thermal response recovery speed of the polyacrylic acid-b-poly-N-isopropylacrylamide is slow, the film does not completely recover after the substrate is cooled.
S31: and exposing, developing and post-baking the photoresist layer 4, and etching the electrode material layer 31 to obtain a bottom electrode.
The exposure is carried out firstly, the film actuator 2 is kept in an expansion state at this time, certain compensation is provided for the focal plane of the depressed area, the depressed area of the electrode material layer 31 and the peripheral normal area are in the same focal plane, and the exposure effect is ensured.
Developing to wash off the exposed photoresist; then a postbake at 120 ℃ was carried out for 120 s. Because the developed photoresist is not completely cured and has certain fluidity, the post-baking process can keep the film actuator 2 in a heated expansion state, and the consistency of the pattern and the exposure process is ensured.
And then etching is carried out to obtain a patterned metal electrode, namely a bottom electrode.
The thermal response type thin film actuator 2 in the embodiment is expanded and slightly deformed by heating, local exposure uniformity compensation is performed on the glue coating substrate, the device layers 3 and the photoresist layers 4 at different positions in the exposure process are kept on the same plane, adverse effects of a depressed area are eliminated, and the exposure effect is improved.
Example 2: and preparing the cantilever beam in the display panel.
When the cantilever beam is manufactured on the array substrate on the display panel, the organic film 14 needs to be manufactured on the substrate, and then the cantilever beam is manufactured at the intersection position of the organic film 14 and the substrate, as shown in fig. 3A. At present, as the thickness of the organic film is about tens of microns, as shown in fig. 3B, the organic film exceeds the exposure focal length range of the exposure machine, which easily causes pattern exposure, and a complete cantilever beam pattern cannot be obtained.
To solve this problem, the scheme adopted by this embodiment is shown in fig. 3C, and includes the following steps:
s121: providing a second substrate 13, preparing an organic film layer 14 in a set area of the second substrate 13, wherein the second substrate 13 and the organic film layer 14 are the functional layer 1; wherein, the interface region between the organic film layer 14 and the second substrate 13 is a step region;
the second substrate 13 may be a glass substrate, and the organic film layer 14 is formed in the AA region of the substrate by coating, and the material thereof is OC (photosensitive resin film), PI (polyimide), or the like.
S122: forming a thin film actuator 2 on the lower side of the stepped area;
as shown in fig. 3D, the boundary between the organic film layer 14 and the second substrate 13 is regarded as a step region, wherein the organic film layer 14 is the upper side of the step, the region of the second substrate 13 that is in the boundary with the organic film layer 14 is the lower side of the step, the corresponding thin film actuator 2 is patterned on the lower side, the type of the thin film actuator is thermal response type, the material of the thin film actuator is polymethacrylic acid-b-poly-N-isopropylacrylamide, the preparation method can be Spin-coating (Spin-coating) or Atomic Layer Deposition (ALD), and the thickness of the thin film can be adjusted according to the defect condition, such as 1-10 μm.
S123: forming a cantilever beam material layer 32 on the step area where the thin film actuator 2 is formed to serve as a device layer 3, and forming a photoresist layer 4 on the cantilever beam material layer 32;
as shown in fig. 3D, a cantilever material is deposited in the step region (including the upper side and the lower side where the thin film actuator 2 is formed) to form a device layer 3, optionally of Al, to a thickness of several hundred nanometers, e.g., 700 nm. And the device layer 3 is deposited to finish coating photoresist, slot die or spin coating can be adopted, and the thickness is 1.5 mu m.
S22: pre-baking the second substrate 13 to make the film actuator 2 expand and deform when heated, push the cantilever beam material layer 32 on the film actuator 2 away from the functional layer 1, and make the cantilever beam material layer 32 on the film actuator 2 and the cantilever beam material layer 32 on the higher side of the step region approach to the same plane;
specifically, the pre-baking is performed at 110 ℃ for 200s, and the thin film actuator 2 is heated to generate rapid expansion deformation, which is about several micrometers to several tens of micrometers, so that the cantilever beam material layer 32 on the lower side of the step (at the substrate) and the cantilever beam material layer 32 on the upper side of the step (at the organic film layer 14) tend to be in the same plane, as shown in fig. 3E. Because the thermal response recovery speed of the polymethacrylic acid-b-poly-N-isopropylacrylamide is slow, the film does not completely recover after the substrate is cooled.
S32: and exposing, developing and post-baking the photoresist layer 4, and etching the cantilever beam material layer 32 to obtain the cantilever beam.
The exposure is carried out firstly, and the film actuator 2 keeps an expansion state at the moment, so that focal plane compensation is carried out on the cantilever beam graph at the lower side of the step area, and the exposure effect is ensured.
Development is then carried out to wash away the exposed photoresist layer 4, followed by a post-bake at 120 ℃ for 200 s. Because the developed photoresist is not completely cured and has certain fluidity, the post-baking keeps the film actuator 2 in a heated expansion state, and the consistency of the pattern and the exposure process is ensured.
And etching to obtain the patterned cantilever beam.
In summary, complex micro-mechanical structures are usually exposed to light simultaneously on different height layers, and the exposure process is a planar process, so that part of the pattern is out of focus and blurred. The film actuator 2 in this embodiment compensates the exposure focal plane through the heated micro-deformation, so that the simultaneously exposed patterns are in the same focal plane, thereby ensuring the exposure effect. In addition, because the film forming thickness of the device layer is thin, even if the thickness unevenness caused by the expansion of the thin film actuator 2 exists at the boundary of the higher side and the lower side of the step region, the structural performance of the cantilever beam cannot be obviously influenced.
This embodiment is suitable for a thin film actuator 2 having a large deformation amount (10 μm to 100 μm).
Example 3: a suspended film bridge in the display panel is prepared.
The suspended membrane bridge structure in the display panel mainly includes anchor points, a sacrificial support layer, and membrane bridges, as shown in fig. 4A and 4B. The suspended film bridge is required to form the sacrificial layer 16 and then release in the preparation process, and the release process is wet etching or dry etching. In the wet etching process, due to the existence of liquid capillary force and mechanical stirring, the suspended structure is easy to adhere to the substrate, and even the device fails; the dry etching usually adopts oxygen plasma, HF or XeF2 gas, which has high requirements on equipment and low homodromous etching efficiency and is easy to damage the upper metal film layer.
In order to solve the above problem, the scheme adopted by this embodiment is shown in fig. 4C, and includes the following steps:
s131: providing a third substrate 15, forming an anchor point mechanism 17 and a sacrificial layer 16 in an AA area of the third substrate 15, wherein the third substrate 15 and the sacrificial layer 16 are functional layers 1;
similarly, the third substrate 15 may be a glass substrate, and the sacrificial layer 16 may be silicon oxide, photoresist or borophosphosilicate glass PSG, or Si, Ge, polysilicon, or the like. The present embodiment is described by taking a photoresist as an example.
S132: forming the thin film actuator 2 on the sacrificial layer 16;
patterning the corresponding thin film actuator 2 on the sacrificial layer 16, as shown in fig. 4D; the film actuator 2 of the embodiment is of a thermal response type, and the material of the film actuator can be polymethylacrylic alcohol-b-poly-N-isopropylacrylamide; the forming method may be Spin-coating (Spin-coating) or Atomic Layer Deposition (ALD), and the thickness may be adjusted according to the height of the actual sacrificial layer 16, such as 1-10 μm.
S133: forming a film bridge layer 33 as the device layer 3 on the thin film actuator 2 and the anchor point mechanism 17;
in particular, the device layer 3 may be deposited with aluminum Al as a film bridge, with a thickness of several hundred nanometers, such as 300 nm.
S23: heating the third substrate base plate 15 to make the thin film actuator 2 expand and deform when heated, so that the sacrificial layer 16 is isolated from the film bridge layer 33;
s33: the sacrificial layer 16 is released such that the membrane bridge layer 33 and the anchor mechanisms 17 form a suspended membrane bridge.
The release of the sacrificial layer 16 may be performed by a wet process or a dry process. The key to the release of the sacrificial layer 16 is, among other things, the selection ratio (etch rate ratio) of the release material and the material of the structural layer and the subsequent drying of the free structure. In the present embodiment, due to the existence of the thin film actuator 2 above the sacrificial layer 16, during the heat release process, the thin film actuator 2 expands due to heat, so that the interface contact between the sacrificial layer 16 and the device layer 3 is weakened, and the release is easier, as shown in fig. 4E.
It should be noted that, both the wet method and the dry method include a heating operation to help increase the reaction rate, so step S23 can also be considered as a preceding operation of step S33.
The present embodiment is implemented by fabricating the thin film actuator 2 on the surface of the sacrificial layer 16 supporting the material. Compared with the method of only growing the sacrificial layer 16, the method can reduce the adhesion between the sacrificial layer 16 and the film bridge, is easier to release cleanly, and has no adverse effect on the original device performance.
Example 4: preparation of flexible RF MEMS switch
The research on the technology of a flexible Radio Frequency Micro-Electro-Mechanical System (RF MEMS switch for short) aims at preparing a Radio Frequency switch on a flexible substrate, wherein the core device structure of the Radio Frequency switch is a movable three-dimensional microstructure, and the size of a key device structure is micron-sized. Limited by the exposure capability of the existing exposure machine, several critical dimensions of the core device structure cannot be simultaneously and accurately patterned. The addition of the thin film actuator layer can perform local exposure compensation on a plurality of positions of the key size of the thin film actuator layer, and can ensure that the key size of the core device can be achieved.
Generally, the thin film actuator related to the above embodiments is a single-layer or double-layer organic thin film, in a semiconductor process, the organic thin film generally serves as an insulating layer and plays a role of an insulating medium between a stored charge and a conductive metal wire, and in a practical production process, the thickness of the insulating layer is generally about 1 micrometer, so that the existence of the thin film actuator does not have great influence on the thickness of a device and the performance of a product.
The method provided by the above embodiments is compatible with semiconductor processing processes, facilitates the preparation of three-dimensional fine structures, and is suitable for applications including but not limited to: the defects of complex three-dimensional microstructure devices such as cantilever beams, resonant beams, membrane bridge structures, comb structures, movable suspended structures, MEMS radio frequency switches and the like are repaired or focusing is assisted, the overall resolution of exposure patterns can be improved, the bonding process is simplified, and the product yield is improved.
In other alternative embodiments, based on the same inventive concept, there is provided a three-dimensional microstructure device, including: a substrate, a film actuator and a three-dimensional microstructure; the thin film actuator is positioned between the substrate and the three-dimensional microstructure or positioned inside the three-dimensional microstructure; the thin film actuator expands during formation of the three-dimensional microstructure device.
Based on the same inventive concept, in yet further alternative embodiments, a display panel is provided, which comprises the three-dimensional microstructure device of the previous embodiments.
Based on the same inventive concept, in still other alternative embodiments, there is provided a display device including the display panel in the foregoing embodiments.
In summary, the scheme provided by the embodiment of the invention has the following beneficial effects or advantages:
the invention provides a display panel, a display device, a three-dimensional microstructure device and a preparation method thereof; the preparation method comprises the steps of forming the thin film actuator between the functional layer and the device layer, enabling the thin film actuator to generate expansion micro-deformation through a set process, and enabling the functional layer to be far away from the device layer, so that when the functional layer or the device layer is processed subsequently to prepare the three-dimensional microstructure device, the expanded thin film actuator can play a role in repairing the film forming uniformity of the functional layer, compensating exposure intensity distribution and exposure focal plane, improving the isolation effect between the device layer and the functional layer and the like, thereby improving the process precision of the three-dimensional micro-mechanical structure, and ensuring the performance and the yield of the three-dimensional microstructure device and products manufactured through a micro-electro-mechanical system.
In the description provided herein, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the invention, various features of the invention are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various inventive aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that the invention as claimed requires more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this invention.
Those skilled in the art will appreciate that the modules in the apparatus of an embodiment may be adaptively changed and disposed in one or more apparatuses other than the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise.
Furthermore, those skilled in the art will appreciate that while some embodiments herein include some features included in other embodiments, rather than other features, combinations of features of different embodiments are meant to be within the scope of the invention and form different embodiments. For example, in the following claims, any of the claimed embodiments may be used in any combination.
It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The usage of the words first, second and third, etcetera do not indicate any ordering. These words may be interpreted as names.
Claims (13)
1. A method for preparing a three-dimensional microstructure device is characterized by comprising the following steps:
preparing a functional layer, a thin film actuator and a device layer, wherein the thin film actuator is positioned between the functional layer and the device layer;
performing a set process to expand the thin film actuator to move the functional layer away from the device layer;
processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device.
2. The method according to claim 1, wherein the thin film actuator is made of one of a thermal response type shape memory material, a photo-induced shape memory material, a pH-induced shape memory material, an electro-induced shape memory material and a magneto-induced shape memory material;
the set process is a corresponding process associated with the material of the thin film actuator; the corresponding process comprises a heating process, an illumination process, a pH value adjusting process, an electric field applying process and a magnetic field applying process.
3. The method of claim 2, wherein the thermo-responsive shape memory material is one of polyethylene-vinyl acetate, polyurethane, polycaprolactone, and copolymers thereof.
4. The method of claim 1, wherein performing the set process to expand the thin film actuator to move the functional layer away from the device layer comprises:
executing a setting process to enable the thin film actuator to expand, push the contact area of the device layer away from the functional layer, and enable the contact area and the peripheral area to tend to be in the same plane;
the contact area is an area where the device layer is in contact with the thin film actuator, and the peripheral area is an area where the device layer is connected with the contact area.
5. The method of claim 4, wherein fabricating the functional layer, the thin film actuator, and the device layer comprises:
preparing the functional layer and detecting a depressed region in the functional layer;
forming the thin film actuator in the recessed region;
forming the device layer on the functional layer on which the thin film actuator is formed.
6. The method of claim 5, wherein the three-dimensional microstructure device is a bottom electrode in a display panel;
the preparing the functional layer and detecting the depressed regions in the functional layer includes: providing a first substrate, and forming a dielectric layer on the first substrate; detecting a depressed area of the dielectric layer; the first substrate base plate and the dielectric layer are the functional layers;
the forming the device layer on the functional layer on which the thin film actuator is formed includes:
forming an electrode material layer as the device layer on the functional layer on which the thin film actuator is formed, and forming a photoresist layer on the electrode material layer;
the executing the setting process expands the thin film actuator, pushes the contact area of the device layer away from the functional layer, and makes the contact area and the peripheral area approach to the same plane, and comprises the following steps:
pre-baking the first substrate to enable the film actuator to be heated to generate expansion deformation, push the electrode material layer on the film actuator to be away from the functional layer, and enable the electrode material layer on the film actuator and the electrode material layer on the peripheral area to tend to be in the same plane;
the processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device includes:
and exposing, developing and post-baking the photoresist layer, and etching the electrode material layer to obtain the bottom electrode.
7. The method of claim 4, wherein fabricating the functional layer, the thin film actuator, and the device layer comprises:
preparing the functional layer and determining a step area in the functional layer;
forming the thin film actuator on a lower side of the stepped region;
forming the device layer on the step region where the thin film actuator is formed.
8. The method of claim 7, wherein the three-dimensional microstructure device is a cantilever beam in a display panel;
the preparing the functional layer and determining a step area in the functional layer includes:
providing a second substrate, and preparing an organic film layer in a set area of the second substrate, wherein the second substrate and the organic film layer are the functional layer; the interface area of the organic film layer and the second substrate base plate is the step area;
the forming the device layer on the step region where the thin film actuator is formed includes:
forming a cantilever beam material layer on the step area on which the thin film actuator is formed as the device layer, and forming a photoresist layer on the cantilever beam material layer;
the executing the setting process makes the thin film actuator expand, the contact area of the device layer is far away from the functional layer, and the contact area and the peripheral area tend to be in the same plane, and the executing the setting process comprises the following steps:
pre-baking the second substrate to enable the thin film actuator to be heated to generate expansion deformation, push the cantilever beam material layer on the thin film actuator to be away from the functional layer, and enable the cantilever beam material layer on the thin film actuator and the cantilever beam material layer on the higher side of the step area to tend to be in the same plane;
the processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device includes:
and carrying out exposure, development and postbaking on the photoresist layer, and etching the cantilever beam material layer to obtain the cantilever beam.
9. The method of claim 1, wherein performing the set process to expand the thin film actuator to move the functional layer away from the device layer comprises:
performing a set process expands the thin film actuator to isolate the functional layer from the device layer.
10. The method of manufacturing according to claim 9, wherein the three-dimensional microstructure device is a suspended film bridge in a display panel;
the preparation of the functional layer, the thin film actuator and the device layer comprises the following steps:
providing a third substrate, and forming an anchor point mechanism and a sacrificial layer in an AA area of the third substrate, wherein the third substrate and the sacrificial layer are the functional layers; forming a thin film actuator on the sacrificial layer; forming a film bridge layer as the device layer over the thin film actuator and the anchor mechanism;
the performing a set process to expand the thin film actuator to isolate the functional layer from the device layer includes:
heating the third substrate base plate to enable the thin film actuator to be heated to generate expansion deformation, so that the sacrificial layer is isolated from the film bridge layer;
processing the device layer or the functional layer in a state where the functional layer is away from the device layer to produce the three-dimensional microstructure device, including:
releasing the sacrificial layer such that the membrane bridge layer and the anchor mechanism form the suspended membrane bridge.
11. A three-dimensional microstructure device, comprising: a substrate, a film actuator and a three-dimensional microstructure; the thin film actuator is positioned between the substrate and the three-dimensional microstructure or positioned inside the three-dimensional microstructure; the thin film actuator expands during formation of the three-dimensional microstructure device.
12. A display panel comprising the three-dimensional microstructure device of claim 11.
13. A display device characterized by comprising the display panel according to claim 12.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210673143.3A CN115072653A (en) | 2022-06-14 | 2022-06-14 | Display panel, display device, three-dimensional microstructure device and preparation method thereof |
| PCT/CN2023/092106 WO2023241252A1 (en) | 2022-06-14 | 2023-05-04 | Display panel, display device, three-dimensional microstructure device and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210673143.3A CN115072653A (en) | 2022-06-14 | 2022-06-14 | Display panel, display device, three-dimensional microstructure device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115072653A true CN115072653A (en) | 2022-09-20 |
Family
ID=83251083
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210673143.3A Pending CN115072653A (en) | 2022-06-14 | 2022-06-14 | Display panel, display device, three-dimensional microstructure device and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN115072653A (en) |
| WO (1) | WO2023241252A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023241252A1 (en) * | 2022-06-14 | 2023-12-21 | 京东方科技集团股份有限公司 | Display panel, display device, three-dimensional microstructure device and preparation method therefor |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4114552B2 (en) * | 2003-06-10 | 2008-07-09 | ソニー株式会社 | Micromachine manufacturing method |
| DE102008001005B4 (en) * | 2008-04-04 | 2011-06-22 | Karlsruher Institut für Technologie, 76131 | A method for producing a composite layer with epitaxially grown layers of a magnetic shape memory material and composite layer with epitaxial layers of a magnetic shape memory material and its use |
| DE102014224569A1 (en) * | 2014-12-02 | 2016-06-02 | Carl Zeiss Smt Gmbh | Surface correction on coated reflective optical elements |
| CN112582569B (en) * | 2020-12-10 | 2022-12-06 | 合肥京东方光电科技有限公司 | Preparation method of display substrate, display substrate and display device |
| CN115072653A (en) * | 2022-06-14 | 2022-09-20 | 北京京东方技术开发有限公司 | Display panel, display device, three-dimensional microstructure device and preparation method thereof |
-
2022
- 2022-06-14 CN CN202210673143.3A patent/CN115072653A/en active Pending
-
2023
- 2023-05-04 WO PCT/CN2023/092106 patent/WO2023241252A1/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023241252A1 (en) * | 2022-06-14 | 2023-12-21 | 京东方科技集团股份有限公司 | Display panel, display device, three-dimensional microstructure device and preparation method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023241252A1 (en) | 2023-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Chang et al. | UV-LIGA process for high aspect ratio structure using stress barrier and C-shaped etch hole | |
| EP0665590B1 (en) | Process for manufacturing a microstructure | |
| Yee et al. | PZT actuated micromirror for fine-tracking mechanism of high-density optical data storage | |
| Li et al. | Low-stress ultra-thick SU-8 UV photolithography process for MEMS | |
| WO2023241252A1 (en) | Display panel, display device, three-dimensional microstructure device and preparation method therefor | |
| Sameoto et al. | Polymer MEMS processing for multi-user applications | |
| JP2005520220A (en) | Method and system for creating nanoscale patterns in a photocurable composition using an electric field | |
| Wei | Laser Heat-Mode Lithography | |
| JP2599897B2 (en) | Fine processing method | |
| US7139110B2 (en) | Micro-structure gap control technology and structure formed therefrom | |
| KR101542142B1 (en) | Microtip arrays for nano lithography, manufacturing method of the same and nano lithography method using the same | |
| JP4463108B2 (en) | Method for manufacturing movable structure of stereolithography unit | |
| Park | Development of a low voltage and large stroke mems-based lorentz force continuous deformable polymer mirror system | |
| Li et al. | Fabrication of metallic micromirror using electroplating technology | |
| Fu et al. | Fabrication of microstructures with different aspect ratios in a single layer | |
| Fedele | Suspended microchannel resonators for Biosensing applications | |
| Flores | Improved Fabrication for Micromirror Arrays | |
| JP2002365198A (en) | Near-field light probe and near-field optical microscope using it and optical recording reproducing unit | |
| Kriama et al. | Nano/microfabrication of three-dimensional device structures using a multilayered mould approach | |
| KR100477346B1 (en) | MEMS Optical Switch using bimorp actuator with lever for displacement amplification And Method thereof | |
| WO2006048229A1 (en) | Method of producing ultra-flat reflective mems optical elements | |
| Kronast et al. | Development of a focusing micromirror device with an in-plane stress relief structure in SOI technology | |
| Pharas | A programmable mask for direct write lithography. | |
| Garcia et al. | Nanoimprint lithography for grayscale pattern replication of MEMS mirrors in a 200 mm wafer | |
| Fernández et al. | Characterization and annealing of high-stroke monolithic gold MEMS deformable mirror for adaptive optics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |