CN115036374B - Solar cell, manufacturing method thereof and photovoltaic module - Google Patents
Solar cell, manufacturing method thereof and photovoltaic module Download PDFInfo
- Publication number
- CN115036374B CN115036374B CN202110204237.1A CN202110204237A CN115036374B CN 115036374 B CN115036374 B CN 115036374B CN 202110204237 A CN202110204237 A CN 202110204237A CN 115036374 B CN115036374 B CN 115036374B
- Authority
- CN
- China
- Prior art keywords
- passivation layer
- substrate
- solar cell
- passivation
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 323
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 81
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 23
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 10
- 229910000077 silane Inorganic materials 0.000 claims description 10
- -1 nitrogen ions Chemical class 0.000 claims description 8
- 235000013842 nitrous oxide Nutrition 0.000 claims description 8
- 230000009471 action Effects 0.000 claims description 7
- 238000005468 ion implantation Methods 0.000 claims description 7
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 238000005019 vapor deposition process Methods 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 259
- 210000004027 cell Anatomy 0.000 description 46
- 230000000694 effects Effects 0.000 description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 239000005388 borosilicate glass Substances 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- 229920000098 polyolefin Polymers 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the application provides a solar cell, a manufacturing method thereof and a photovoltaic module, wherein the solar cell comprises: an N-type substrate and a P-type emitter positioned on the front surface of the substrate; a first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer which are positioned on the front surface of the substrate and are sequentially stacked in a direction away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y A material of which the third passivation layer comprises silicon nitride Si m N n A material of the fourth passivation layer including a second silicon oxynitride SiO i N j A material, the second passivation layer comprising a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration less than a nitrogen atom concentration of the second portion; and a passivation contact structure located on the rear surface of the substrate. The embodiment of the application is beneficial to improving the light utilization rate of the solar cell.
Description
Technical Field
The embodiment of the application relates to the field of photovoltaics, in particular to a solar cell, a manufacturing method thereof and a photovoltaic module.
Background
The reflectance or absorptivity of sunlight is a key factor in the efficiency of the cell. Currently, the passivation of crystalline silicon solar cells in the industry is commonly adoptedWith aluminium oxide/silicon nitride (AlO) x /SiN y ) The stack serves as an emitter passivation layer. The coating equipment and the precursor gas source (such as trimethylaluminum) required by the alumina material deposition have higher cost, and are not beneficial to mass production in modern industrialization; the silicon nitride material has a higher refractive index, is unfavorable for the antireflection of the front surface of the battery, and is unfavorable for the manufacture of a black component because the appearance of the solar component is blue after the packaging materials such as ethylene-vinyl acetate (EVA) or Polyolefin (POE) are used.
It is therefore desirable to develop a new N-type cell that is not an aluminum oxide passivation system and has low cost, high light utilization to replace the N-type cell of the aluminum oxide passivation system.
Disclosure of Invention
The embodiment of the application provides a solar cell, a manufacturing method thereof and a photovoltaic module, which are beneficial to improving the sunlight utilization rate of the solar cell.
To solve the above problems, an embodiment of the present application provides a solar cell including: an N-type substrate and a P-type emitter positioned on the front surface of the substrate; a first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer which are positioned on the front surface of the substrate and are sequentially stacked in a direction away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y A material of which the third passivation layer comprises silicon nitride Si m N n A material of the fourth passivation layer including a second silicon oxynitride SiO i N j A material, the second passivation layer comprising a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration less than a nitrogen atom concentration of the second portion; and a passivation contact structure located on the rear surface of the substrate.
In addition, the nitrogen atom concentration of different regions in the second passivation layer increases in a direction of the substrate toward the third passivation layer.
In addition, x/y E [1.51,2.58] in the second passivation layer, the second refractive index of the second passivation layer is 1.60-1.71.
In addition, the thickness of the second passivation layer is 1nm to 25nm in a direction perpendicular to the front surface of the substrate.
In addition, the nitrogen atom concentration of different regions in the third passivation layer increases in a direction of the substrate toward the fourth passivation layer.
In addition, m/n E [3.12,5.41] in the third passivation layer, the third refractive index of the third passivation layer is 1.98-2.20.
In addition, i/j epsilon [1.98,8.47] in the fourth passivation layer, the fourth refractive index of the fourth passivation layer is 1.50-1.70.
Correspondingly, the embodiment of the application also provides a solar module, which comprises the solar cell.
Correspondingly, the embodiment of the application also provides a manufacturing method of the solar cell, which comprises the following steps: providing an N-type substrate and a P-type emitter positioned on the front surface of the substrate; forming a first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer stacked in sequence on the front surface of the substrate in a direction away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y A material of which the third passivation layer comprises silicon nitride Si m N n A material of the fourth passivation layer including a second silicon oxynitride SiO i N j A material, the second passivation layer comprising a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration less than a nitrogen atom concentration of the second portion; and forming a passivation contact structure on the rear surface of the substrate.
In addition, the process step of forming the second passivation layer includes: introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of first pulse power to form a second passivation film containing silicon oxynitride material; wherein the flow ratio of silane to laughing gas is not less than 1/10, and the first pulse power is 30-40 mW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Introducing ammonia into the reaction chamber, and performing pulse power controlThe second passivation film is subjected to an ion implantation process of nitrogen ions to form the second passivation layer; wherein the second pulse power is 15-25 mW/cm 2 The ion implantation time is 300 s-600 s.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages:
in the technical scheme, the first part has lower nitrogen atom concentration, the material characteristic is closer to that of the silicon oxide material in the first passivation layer, the second part has higher nitrogen atom concentration, and the material characteristic is closer to that of the silicon nitride material in the third passivation layer, so that the second passivation layer and the adjacent first passivation layer and third passivation layer have better lattice matching effect and lower interface defect density, and the optical loss at the interface of the film layer is reduced and the optical utilization rate is improved; in addition, the silicon oxynitride material with relatively low refractive index is used as the fourth passivation layer, so that the difference of refractive indexes between the outer layer of the solar cell and the packaging material is reduced, light reflection is reduced, the light utilization rate is improved, and the short-circuit current of the solar cell is improved.
In addition, in the direction of the substrate towards the fourth passivation layer, the nitrogen atom concentration of different areas in the third passivation layer increases progressively, and the refractive index of different areas of the third passivation layer decreases progressively, so that the light utilization rate is improved.
Drawings
One or more embodiments are illustrated by way of example in the accompanying drawings, which are not intended to be limiting in scale unless specifically stated otherwise.
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present application;
FIG. 2 is a schematic view of a partial structure of the solar cell shown in FIG. 1;
FIG. 3 is a schematic view of an external appearance of a solar module according to an embodiment of the present application;
fig. 4 is a schematic diagram showing a change in reflectivity of a solar cell according to an embodiment of the present application;
fig. 5 to 14 are schematic structural diagrams corresponding to each step of the method for manufacturing a solar cell according to an embodiment of the present application.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be understood by those of ordinary skill in the art that in various embodiments of the present application, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the claimed technical solution of the present application can be realized without these technical details and various changes and modifications based on the following embodiments.
Referring to fig. 1 and 2, the solar cell includes: an N-type substrate 100 and a P-type emitter 111 located on a front surface of the substrate 100; a first passivation layer 112, a second passivation layer 113, a third passivation layer 114, and a fourth passivation layer 115 sequentially stacked on the front surface of the substrate 100 in a direction away from the P-type emitter 111, the first passivation layer 112 including a silicon oxide material, the second passivation layer 113 including a first silicon oxynitride SiO x N y The material, third passivation layer 114 comprises silicon nitride Si m N n The material, fourth passivation layer 115 includes a second silicon oxynitride SiO i N j The material, the second passivation layer 113 includes a first portion 113a adjacent to the first passivation layer 112 and a second portion 113b adjacent to the third passivation layer 114, the first portion 113a having a nitrogen atom concentration less than the second portion 113 b; a passivation contact structure 125 located on the rear surface of the substrate 100.
Wherein the first portion 113a is in contact with the first passivation layer 112, the second portion 113b is in contact with the third passivation layer 114, and the first portion 113a and the second portion 113b have a depth in a direction perpendicular to the front surface of the substrate 100.
In some embodiments, the substrate 100 is a silicon substrate doped with N-type ions (e.g., phosphorus, etc. group five elements), the front surface of the substrate 100 is the surface of the substrate 100 facing sunlight, and the rear surface of the substrate 100 is the surface of the substrate 100 facing away from sunlight; the P-type emitter 111 is located in at least a portion of the surface space of the substrate 100 facing the sun, the P-type emitter 111 is doped with P-type ions (e.g., boron, etc. of three main groups), and the P-type emitter 111 forms a PN junction with the N-type substrate 100.
The material of the silicon substrate includes monocrystalline silicon, polycrystalline silicon, amorphous silicon, and microcrystalline silicon, and the silicon oxide material in the first passivation layer 112 is formed in situ or deposited separately based on the silicon substrate, and the thickness of the first passivation layer 112 is 1 to 3nm, for example, 1.5nm, 2nm, or 2.5nm, in a direction perpendicular to the front surface of the substrate 100; in other embodiments, the substrate material may also be elemental carbon, organic materials, and multi-compounds including gallium arsenide, cadmium telluride, copper indium selenium, and the like.
In some embodiments, the nitrogen atom concentration of different regions in the second passivation layer 113 increases in the direction of the substrate 100 toward the third passivation layer 114, in other words, the first silicon oxynitride SiO of different regions in the second passivation layer 113 x N y The x/y value of the material is gradually decreased. Since the first portion 113a has a relatively large oxygen atom ratio and a relatively small nitrogen atom ratio, the material properties of the first portion 113a are closer to those of silicon oxide; since the oxygen atoms are relatively small and the nitrogen atoms are relatively large in the second portion 113b, the material characteristics of the second portion 113b are closer to those of silicon nitride.
Due to the material characteristics of the silicon oxide material between the silicon substrate and the first silicon oxynitride SiO x N y The first passivation layer 112 is arranged between materials to serve as an intermediate layer between the second passivation layer 113 and the substrate 100, and meanwhile, the first part 113a is arranged to have oxygen atoms with larger concentration, so that the matching property between the second passivation layer 113 and the substrate 100 is further improved, a film interlayer interface with larger defect density due to larger film material characteristic difference is avoided, the substrate 100 and the first passivation layer 112 as well as the first passivation layer 112 and the second passivation layer 113 are ensured to have better lattice matching characteristics, light incidence loss and carrier transmission loss generated due to interface defects are reduced, and the photoelectric conversion efficiency is improved.
Accordingly, the second portion 113b has nitrogen atoms with larger concentration, which is favorable for enabling the second passivation layer 113 and the third passivation layer 114 to have good lattice matching effect, reducing the interface state defect density between the second passivation layer 113 and the third passivation layer 114, reducing the solar light incidence loss and the carrier transmission loss generated by the interface defects, and improving the photoelectric conversion efficiency.
With the value of x/y as the first ratio, since the magnitude of the first ratio of different regions in the second passivation layer 113 determines the magnitude of the refractive index of the region, the range of the first ratio in the second passivation layer 113 needs to be defined based on the requirement of the second refractive index of the second passivation layer 113. Theoretically, the larger the first ratio, i.e., the smaller the nitrogen atom concentration, the smaller the refractive index of the first silicon oxynitride material, the smaller the first ratio, i.e., the larger the nitrogen atom concentration, the larger the refractive index of the first silicon oxynitride material.
In some embodiments, the first silicon oxynitride material and the second passivation layer 113 have a relatively high second refractive index by adjusting the magnitude of the first ratio. In this way, when the fourth passivation layer 115 is subsequently introduced, the second refractive index of the second passivation layer 113 may be greater than or similar to the fourth refractive index of the fourth passivation layer 115, so as to improve the utilization efficiency of the incident light and the photoelectric conversion efficiency of the solar cell; accordingly, on the premise of ensuring the utilization efficiency of incident light, the fourth refractive index of the fourth passivation layer 115 has a relatively large optional range, namely, the material selection range of the fourth passivation layer 115 is enlarged, and the flexibility of adjusting the fourth refractive index of the fourth passivation layer 115 within a certain range is improved, so that the refractive index of the packaging component of the solar cell is better adapted, the refractive index of the fourth passivation layer 115 can be further matched with the refractive index of the material of the packaging component, the light reflection of the solar component towards the sun surface is reduced, the absorption performance of the solar component to sunlight with different wavebands is optimized, and the short-circuit current and the cell efficiency of the solar cell are improved.
The first ratio of the second passivation layer 113 is 1.51-2.58, and correspondingly, the second refractive index of the second passivation layer 113 determined by the first ratio is 1.60-1.71. Thus, the second passivation layer 113 has better lattice matching with the adjacent film layer, the second passivation layer 113 has higher incident light utilization rate, and the fourth passivation layer 115 has flexibility of adjusting the refractive index within a certain range.
The thickness of the second passivation layer 113 is related to the passivation effect and incident light utilization rate of the second passivation layer 113. Specifically, the thinner the thickness of the second passivation layer 113, the smaller the stress applied to the first passivation layer 112 by the second passivation layer 113, the lower the interface state defect density between the first passivation layer 112 and the second passivation layer 113, and the better the passivation effect of the second passivation layer 113; meanwhile, the thinner the thickness of the second passivation layer 113 is, the weaker the light trapping capability of the second passivation layer 113 is, the lower the light loss of the second passivation layer 113 is, and the higher the incident light utilization rate of the solar cell is; the thicker the second passivation layer 113, the easier it is to adjust the nitrogen atom concentration of different regions within the second passivation layer 113 to improve the lattice matching with the adjacent film layer and reduce the optical loss.
Wherein, the thickness of the second passivation layer 113 may be set to 1nm to 25nm, for example, 5nm, 10nm, 15nm or 20nm in a direction perpendicular to the front surface of the N-type substrate 100. In this way, the second passivation layer 113 has weak light trapping capability, and the surface layer opposite to the second passivation layer 113 has a nitrogen atom concentration with a large difference, so as to improve the lattice matching characteristic with the adjacent film layer.
The third passivation layer 114 is made of silicon nitride Si m N n Material composition, silicon nitride Si m N n The number of silicon atoms to the number of nitrogen atoms of the silicon nitride in the material has a second ratio, and the refractive index of the third passivation layer 114 can be adjusted by adjusting the magnitude of the second ratio.
In some embodiments, the second ratio is 3 to 5, specifically 3.12 to 5.41, e.g., 3.72, 4.32, or 4.92, and correspondingly, the third refractive index of the third passivation layer 114 is 1.98 to 2.20, e.g., 2.05, 2.1, or 2.15. The silicon nitride with the atomic number ratio has higher refractive index, is favorable for reducing reflection and emergent of light rays, enhances absorption of visible light, and is convenient for preparing dark blue or even black solar cells so as to meet the requirements of black components.
It should be noted that the second ratio is set based on the first ratio, so that the third passivation layer 114 has a good hydrogen passivation effect under the influence of the surface charge of the second passivation layer 113, and the third refractive index of the third passivation layer 114 is greater than the second refractive index of the second passivation layer 113 and the fourth refractive index of the fourth passivation layer 115, so that the second passivation layer 113 and the third passivation layer 114 as a whole have a higher refractive index relative to the fourth passivation layer 115, thereby reducing reflection and emergence of light and improving the photoelectric conversion efficiency of the solar cell.
The thickness of the third passivation layer 114 is related to the hydrogen passivation effect and cost of the third passivation layer 114, and theoretically, the thicker the thickness is, the stronger the hydrogen passivation effect is, and at the same time, the thicker the thickness is, the slower the enhancement of the hydrogen passivation effect is; further, the thicker the thickness, the higher the cost, and the thicker the package size of the solar cell.
In some embodiments, the thickness of the third passivation layer 114 is 40nm to 60nm, for example 45nm, 50nm, or 55nm, in a direction perpendicular to the N-type substrate 100. When the thickness of the third passivation layer 114 is in the range of 40 nm-60 nm, the positive charge quantity carried by the third passivation layer 114 is guaranteed to meet the interface hydrogen passivation requirement, and the surface recombination rate of carriers is reduced; in addition, the manufacturing cost of the third passivation layer 114 is reduced, and the package size of the solar cell is reduced.
The definition of the refractive index and the thickness of the third passivation layer 114 pertains to the definition of the entire third passivation layer 114, and in practice, the third passivation layer 114 may be a single-layer film or may be composed of a plurality of sequentially stacked film layers. Specifically, the third passivation layer 114 may be formed of 2 to 5 sub-film layers, in which the concentration of nitrogen atoms in the different sub-film layers increases gradually and the refractive index decreases gradually in the direction of the substrate 100 toward the third passivation layer 114, and the refractive index of each sub-film layer satisfies the limitation regarding the refractive index of the third passivation layer 114, which is advantageous for further improving the utilization rate of the incident light.
The fourth passivation layer 115 is formed of a second silicon oxynitride SiO i N j Material composition, second silicon oxynitride SiO i N j The number of oxygen atoms to the number of nitrogen atoms in the material has a third ratio, and the refractive index of the fourth passivation layer 115 can be adjusted by adjusting the magnitude of the third ratio.
In some embodiments, the third ratio is 1.98-8.47, e.g., 2.5, 5, or 6.5, and the fourth refractive index of the fourth passivation layer 115 is 1.50-1.70, e.g., 1.55, 1.60, or 1.65. In this way, the fourth refractive index of the fourth passivation layer 115 is advantageously smaller than or similar to the second refractive index of the second passivation layer 113, so as to improve the utilization efficiency of the incident light and the photoelectric conversion efficiency of the solar cell; in addition, the fourth refractive index of the fourth passivation layer 115 is larger than the refractive index of the packaging component material and smaller than the third refractive index of the third passivation layer 114, so that light reflection caused by overlarge difference between the refractive indexes of the solar cell surface layer material and the packaging component material is avoided, light absorption is enhanced, and black or dark blue solar components are conveniently prepared.
The packaging component material is usually transparent material such as ethylene-vinyl acetate (EVA) or Polyolefin (POE), the refractive index of the material is generally in the range of 1.40-1.50, the refractive index difference between the material and the silicon nitride material is large, for example, the refractive index of the third passivation layer 114 is 1.98-2.20, and the fourth passivation layer 115 with the refractive index in the middle value is provided, which is beneficial to enhancing the absorption of light. Compared to the conventional aluminum oxide/silicon nitride passivation anti-reflection layer, referring to fig. 3, the packaged solar module exhibits dark blue or even black under sunlight.
The ability of the solar cell to absorb light is predominantly manifested in the refractive index and thickness of the third passivation layer 114 and the refractive index and thickness of the fourth passivation layer 115. Since the refractive index and thickness of the third passivation layer 114 and the refractive index of the fourth passivation layer 115 have been determined, in order to further secure a high light absorption capability of the solar cell, the thickness of the fourth passivation layer 115 may be set to 40nm to 60nm, for example, 45nm, 50nm or 55nm.
In the above embodiment, by providing the first passivation layer 112, the second passivation layer 113 and the third passivation layer 114 having the graded nitrogen atom concentration, and the fourth passivation layer 115 having the intermediate refractive index, which have material characteristics between the substrate 100 and the second passivation layer 113, the incidence and absorption of solar light of different wavelength bands by the solar cell are optimized, thereby improving the short-circuit current and the cell efficiency of the solar cell. Referring to fig. 4, the present application provides an improved passivation stack for near ultraviolet light versus an existing aluminum oxide/silicon nitride passivation anti-reflection layerThe light wave band and the ultraviolet wave band have lower reflectivity, for example, the reflectivity of the light with the wavelength of about 350nm is reduced from about 20 percent to about 5 percent by about 4 times, further, the average reflectivity of the light with the wavelength ranging from 350nm to 1050nm is reduced from 2.1 to 2.3 percent to 1.4 to 1.6 percent, and the utilization rate of the light of the improved passivation lamination is higher; further, the application provides a short-circuit current I of the solar cell sc Can be raised by about 30 mA.
In some embodiments, the passivation contact structure 125 includes at least: an interface passivation layer 121 and a field passivation layer 122 are sequentially disposed in a direction away from the substrate 100. The material of the interface passivation layer 121 is a dielectric material, so as to implement interface passivation on the back surface of the substrate 100, for example, the interface passivation layer 121 is a tunneling oxide layer (such as a silicon oxide layer); the material of the field passivation layer 122 is a material for achieving a field passivation effect, such as a doped silicon layer, and the doped silicon layer may be one or more of a doped polysilicon layer, a doped microcrystalline silicon layer, or a doped amorphous silicon layer. For an N-type silicon substrate 100, the field passivation layer 122 may be an N-type doped polysilicon layer.
In some embodiments, a fifth passivation layer 123 is also provided on the surface of the field passivation layer 122 facing away from the substrate 100. The material of the fifth passivation layer 123 includes a material that performs an anti-reflection function, such as silicon nitride. Wherein the fifth passivation layer 123 may be a multi-layered sub-film similar to the third passivation layer 114, i.e., the refractive index of the different sub-film gradually decreases in the direction of the substrate 100 toward the fifth passivation layer 123, each sub-film being limited by the overall refractive index of the fifth passivation layer 123.
In addition, the solar cell further includes a first electrode 116 and a second electrode 124, the first electrode 116 is electrically connected to the P-type emitter 111, and the second electrode 124 is electrically connected to the field passivation layer 122 through the fifth passivation layer 123. In some embodiments, the first electrode 116 and/or the second electrode 124 may be sinter printed with a conductive paste (silver paste, aluminum paste, or silver aluminum paste).
In some embodiments, the first portion has a lower concentration of nitrogen atoms, the material characteristics are closer to those of the silicon oxide material in the first passivation layer, the second portion has a higher concentration of nitrogen atoms, and the material characteristics are closer to those of the silicon nitride material in the third passivation layer, so that the second passivation layer has a better lattice matching effect and a lower interface defect density with the adjacent first passivation layer and third passivation layer, which is beneficial to reducing the interface loss of sunlight and improving the sunlight utilization rate; in addition, the silicon oxynitride material with relatively low refractive index is used as the fourth passivation layer, so that the difference of refractive indexes between the fourth passivation layer and the packaging material is reduced, light reflection is reduced, light utilization rate is improved, and short-circuit current of the solar cell is improved.
Correspondingly, the embodiment of the application also provides a solar component, which comprises the solar cell, wherein the solar cell is provided with a P-type emitter, and a non-alumina passivation system is adopted, so that compared with the combination of an N-type emitter and an alumina passivation system, the solar component provided by the embodiment of the application has lower light reflectivity and lower light loss, and finally has higher photoelectric conversion efficiency and larger short-circuit current.
Correspondingly, the embodiment of the application also provides a manufacturing method of the solar cell, which can be used for manufacturing the solar cell.
Referring to fig. 5 to 7, an N-type substrate 100 is provided and double-sided texturing is performed to form a P-type emitter 111.
Specifically, the N-type substrate 100 is cleaned, and a pyramid suede is prepared by adopting a wet chemical etching mode, so that the reflection of the surface of the substrate 100 on light can be reduced, the absorption and utilization rate of the substrate 100 on light can be increased, and the conversion efficiency of the solar cell can be improved; in addition, the pile surface can be prepared by adopting a mature line alkali pile surface making process to form a 45-degree regular pyramid pile surface.
After double-sided texturing, the front surface of the substrate 100 is subjected to boron diffusion treatment to form a P-type emitter 111, the P-type emitter 111 occupies part of the surface layer space of the substrate 100 facing the sun, and the P-type emitter 111 and the substrate 100 form a PN junction.
It should be noted that, the boron diffusion treatment may also generate unnecessary borosilicate glass on the front surface, the rear surface and the side surfaces of the substrate 100, so that the borosilicate glass has a certain protection effect on the substrate 100, and may avoid damage to the surface of the substrate 100 caused by certain process steps. In other words, the unnecessary borosilicate glass may be used as a mask layer for the substrate 100.
Referring to fig. 8, a planarization process (e.g., polishing) is performed on the rear surface of the substrate 100.
The back surface is the side of the solar cell facing away from sunlight, and the planarization process can form the planar surface required for depositing the back surface film layer. During the planarization process, borosilicate glass of the rear surface is removed together.
Referring to fig. 9 and 10, an interface passivation layer 121 and a field passivation layer 122 are formed to constitute a passivation contact structure.
In some embodiments, the interface passivation layer 121 is formed using a deposition process, specifically, the material of the interface passivation layer 121 includes silicon oxide, and the deposition process includes a chemical vapor deposition process; in other embodiments, the interface passivation layer may be formed by an in-situ process, and specifically, the interface passivation layer may be formed in-situ by a thermal oxidation process, a nitric acid passivation process, or the like on the basis of the silicon substrate.
In some embodiments, after the interface passivation layer 121 is formed, intrinsic polysilicon is deposited to form a polysilicon layer, and phosphorus ions are doped by means of ion implantation and source diffusion to form an N-type doped polysilicon layer, which serves as the field passivation layer 122.
When the interface passivation layer 121 and the field passivation layer 122 are formed by using a deposition process, since the front surface has borosilicate glass as a mask layer to protect the front surface of the substrate 100, the deposition region is defined on the rear surface without using a mask when the deposition process is performed, and then the same process can be used to simultaneously remove the borosilicate glass on the front surface and the silicon oxide and polysilicon deposited on the front surface. Therefore, no extra mask is needed, which is beneficial to reducing the process steps, shortening the process flow and reducing the process cost.
In other embodiments, when the interface passivation layer is formed using an in situ growth process, only polysilicon is deposited on the borosilicate glass surface of the front surface of the substrate.
Referring to fig. 11, a first passivation layer 112 is formed on the front surface of the substrate 100.
In some embodiments, it may be desirable to remove excess borosilicate glass, silicon oxide, and polysilicon that is deposited around the front surface of the substrate 100 prior to forming the first passivation layer 112; in other embodiments, it may be desirable to remove excess borosilicate glass and polysilicon that is deposited around the front surface of the substrate prior to forming the first passivation layer.
In some embodiments, after removing the surplus material, oxidizing for 15 to 30 minutes in an oxygen-containing atmosphere at 450 to 500 ℃ to form an ultra-thin silicon oxide layer having a thickness of 1 to 3nm on the front surface of the substrate 100 as the first passivation layer 112; in other embodiments, the process of forming the ultra-thin silicon oxide layer may further include natural oxidation, deposition, ozone oxidation, or nitric acid passivation.
Referring to fig. 12, a second passivation layer 113 is formed on the surface of the first passivation layer 112.
In some embodiments, the second passivation layer 113, the third passivation layer 114, and the fourth passivation layer 115 are sequentially deposited on the surface of the first passivation layer 112 using a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Taking tube PECVD as an example, the deposition temperatures of different passivation layers are generally set to 450-500 ℃.
Specifically, the process steps of forming the second passivation layer 113 include: introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of first pulse power to form a second passivation film containing silicon oxynitride material; wherein the flow ratio of silane to laughing gas is not less than 1/10, and the first pulse power is 30-40 mW/cm 2 The method comprises the steps of carrying out a first treatment on the surface of the Introducing ammonia into the reaction chamber, and performing an ion implantation process of nitrogen ions on the second passivation film under the action of the second pulse power to form a second passivation layer 113; wherein the second pulse power is 15-25 mW/cm 2 The ion implantation time is 300 s-600 s. The pulse power is a pulse power per unit area.
The second passivation layer 113 includes a first portion 113a adjacent to the first passivation layer 112 and a second portion 113b facing away from the first passivation layer 112, and through the above process, the concentration of nitrogen atoms in the first portion 113a may be made smaller than the concentration of nitrogen atoms in the second portion 113b, specifically, the concentration of nitrogen ions in different regions within the second passivation layer 113 increases in the direction of the substrate 100 toward the third passivation layer 114, so that the second passivation layer 113 has a higher lattice matching characteristic with the first passivation layer 112 and the subsequently formed third passivation layer.
Referring to fig. 13, a third passivation layer 114 is formed to cover the surface of the second passivation layer 113.
In some embodiments, the process steps of forming the third passivation layer 114 include: introducing silane and ammonia into the reaction chamber, and performing a plasma vapor deposition process under the action of third pulse power to form a third passivation layer 114 containing silicon nitride material; wherein the flow ratio of the silane to the ammonia is 1/10-1/5, and the third pulse power is 30-40 mW/cm 2 . The thickness of the third passivation layer 114 is 40nm to 60nm in a direction perpendicular to the front surface of the substrate 100, and the overall refractive index of the third passivation layer 114 is 2.00 to 2.10, for example, 2.25, 2.5, or 2.75.
In some embodiments, the process equipment for forming the second passivation layer 113 is the same as the process equipment for forming the third passivation layer 114, and no additional equipment is required to form the aluminum oxide layer, which is advantageous in reducing hardware cost.
Referring to fig. 14, a fourth passivation layer 115 is formed to cover the surface of the third passivation layer 114, and a fifth passivation layer 123 is formed on the surface of the field passivation layer 122 facing away from the substrate 100.
In some embodiments, the process steps of forming the fourth passivation layer 115 include: introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of fourth pulse power to form a fourth passivation layer 115 containing silicon oxynitride material; wherein the flow ratio of silane to laughing gas is not less than 1/10, and the fourth pulse power is 25-40 mW/cm < 2 >. The thickness of the fourth passivation layer 115 is 40nm to 60nm in a direction perpendicular to the front surface of the substrate 100, and the overall refractive index of the fourth passivation layer 115 is 1.50 to 1.70, for example, 1.55, 1.60, or 1.65.
In some embodiments, the fifth passivation layer 123 may be divided into multiple sub-layers, for example, 2-4 layers, and the refractive indexes of the different sub-layers sequentially increase in the direction of the fifth passivation layer 123 towards the substrate 100, so that the anti-reflection effect of the solar cell is improved, and the rear surface of the solar cell presents a full black effect. The material of the fifth passivation layer 123 includes silicon nitride.
Referring to fig. 1, a first electrode 116 and a second electrode 124 are formed.
After the fifth passivation layer 123 is formed, a metallization process, specifically including a screen printing process and a high temperature sintering process, is performed to form the first electrode 116 connected to the emitter 111 and the second electrode 124 connected to the field passivation layer 122.
In some embodiments, the first portion has a lower concentration of nitrogen atoms, the material characteristics are closer to those of the silicon oxide material in the first passivation layer, the second portion has a higher concentration of nitrogen atoms, and the material characteristics are closer to those of the silicon nitride material in the third passivation layer, so that the second passivation layer has a better lattice matching effect and a lower interface defect density with the adjacent first passivation layer and third passivation layer, which is beneficial to reducing the interface loss of sunlight and improving the sunlight utilization rate; in addition, the silicon oxynitride material with relatively low refractive index is used as the fourth passivation layer, so that the difference of refractive indexes between the fourth passivation layer and the packaging material is reduced, light reflection is reduced, light utilization rate is improved, and short-circuit current of the solar cell is improved.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of carrying out the application and that various changes in form and details may be made therein without departing from the spirit and scope of the application. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the application, and the scope of the application is therefore intended to be limited only by the appended claims.
Claims (10)
1. A solar cell, comprising:
an N-type substrate and a P-type emitter positioned on the front surface of the substrate;
is positioned at the premisesA first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer sequentially stacked on the front surface of the substrate in a direction away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y A material of which the third passivation layer comprises silicon nitride Si m N n A material of the fourth passivation layer including a second silicon oxynitride SiO i N j A material, the second passivation layer comprising a first portion adjacent to the first passivation layer and a second portion adjacent to the third passivation layer, the first portion having a nitrogen atom concentration less than a nitrogen atom concentration of the second portion, the first passivation layer being on a surface of the P-type emitter on a side remote from the substrate, the third passivation layer covering an entire area of the surface of the second passivation layer remote from the substrate;
a passivation contact structure located on the rear surface of the substrate;
the second passivation layer has x/y epsilon [1.51,2.58], the third passivation layer has m/n epsilon [3.12,5.41], the fourth passivation layer has i/j epsilon [1.98,8.47], the second passivation layer has a second refractive index greater than that of the fourth passivation layer, and the third passivation layer has a third refractive index greater than that of the second passivation layer.
2. The solar cell of claim 1, wherein the concentration of nitrogen atoms in different regions of the second passivation layer increases in a direction of the substrate toward the third passivation layer.
3. The solar cell according to claim 1 or 2, wherein the second refractive index of the second passivation layer is 1.60-1.71.
4. The solar cell according to claim 1, wherein the thickness of the second passivation layer is 1nm to 25nm in a direction perpendicular to the front surface of the substrate.
5. The solar cell of claim 1, wherein the concentration of nitrogen atoms in different regions of the third passivation layer increases in a direction of the substrate toward the fourth passivation layer.
6. The solar cell of claim 5, wherein the third passivation layer has a third refractive index of 1.98-2.20.
7. The solar cell according to claim 1 or 6, wherein the fourth refractive index of the fourth passivation layer is 1.50-1.70.
8. A photovoltaic module comprising the solar cell of any one of claims 1 to 7.
9. A method of manufacturing a solar cell, comprising:
providing an N-type substrate and a P-type emitter positioned on the front surface of the substrate;
forming a first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer stacked in sequence on the front surface of the substrate in a direction away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y A material of which the third passivation layer comprises silicon nitride Si m N n A material of the fourth passivation layer including a second silicon oxynitride SiO i N j A material, the second passivation layer comprising a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration less than a nitrogen atom concentration of the second portion;
wherein x/y epsilon [1.51,2.58] in the second passivation layer, m/n epsilon [3.12,5.41] in the third passivation layer, i/j epsilon [1.98,8.47] in the fourth passivation layer, the second refractive index of the second passivation layer being greater than the fourth refractive index of the fourth passivation layer, the third refractive index of the third passivation layer being greater than the second refractive index of the second passivation layer;
and forming a passivation contact structure on the rear surface of the substrate.
10. The method of claim 9, wherein the step of forming the second passivation layer comprises:
introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of first pulse power to form a second passivation film containing silicon oxynitride material; wherein the flow ratio of silane to laughing gas is not less than 1/10, and the first pulse power is 30-40 mW/cm 2 ；
Introducing ammonia into the reaction chamber, and performing an ion implantation process of nitrogen ions on the second passivation film under the action of second pulse power to form a second passivation layer; wherein the second pulse power is 15-25 mW/cm 2 The ion implantation time is 300 s-600 s.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311154777.9A CN117080277A (en) | 2021-02-23 | 2021-02-23 | Solar cell, manufacturing method thereof and photovoltaic module |
| CN202110204237.1A CN115036374B (en) | 2021-02-23 | 2021-02-23 | Solar cell, manufacturing method thereof and photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110204237.1A CN115036374B (en) | 2021-02-23 | 2021-02-23 | Solar cell, manufacturing method thereof and photovoltaic module |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311154777.9A Division CN117080277A (en) | 2021-02-23 | 2021-02-23 | Solar cell, manufacturing method thereof and photovoltaic module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115036374A CN115036374A (en) | 2022-09-09 |
| CN115036374B true CN115036374B (en) | 2023-10-31 |
Family
ID=83118452
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110204237.1A Active CN115036374B (en) | 2021-02-23 | 2021-02-23 | Solar cell, manufacturing method thereof and photovoltaic module |
| CN202311154777.9A Pending CN117080277A (en) | 2021-02-23 | 2021-02-23 | Solar cell, manufacturing method thereof and photovoltaic module |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202311154777.9A Pending CN117080277A (en) | 2021-02-23 | 2021-02-23 | Solar cell, manufacturing method thereof and photovoltaic module |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN115036374B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011243855A (en) * | 2010-05-20 | 2011-12-01 | Kyocera Corp | Solar cell element and method of manufacturing the same and solar cell module |
| CN102751337A (en) * | 2012-07-31 | 2012-10-24 | 英利集团有限公司 | N type crystalline silicon solar battery and manufacturing method thereof |
| CN104488118A (en) * | 2012-09-27 | 2015-04-01 | 东洋铝株式会社 | Conductive member, electrode, secondary battery, capacitor, method for producing conductive member, and method for producing electrode |
| CN110112243A (en) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | Passivation structure on back of solar battery and preparation method thereof |
| CN112201701A (en) * | 2020-09-30 | 2021-01-08 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6330108B1 (en) * | 2016-11-07 | 2018-05-23 | 信越化学工業株式会社 | High photoelectric conversion efficiency solar cell and method for producing high photoelectric conversion efficiency solar cell |
-
2021
- 2021-02-23 CN CN202110204237.1A patent/CN115036374B/en active Active
- 2021-02-23 CN CN202311154777.9A patent/CN117080277A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011243855A (en) * | 2010-05-20 | 2011-12-01 | Kyocera Corp | Solar cell element and method of manufacturing the same and solar cell module |
| CN102751337A (en) * | 2012-07-31 | 2012-10-24 | 英利集团有限公司 | N type crystalline silicon solar battery and manufacturing method thereof |
| CN104488118A (en) * | 2012-09-27 | 2015-04-01 | 东洋铝株式会社 | Conductive member, electrode, secondary battery, capacitor, method for producing conductive member, and method for producing electrode |
| CN110112243A (en) * | 2019-06-02 | 2019-08-09 | 苏州腾晖光伏技术有限公司 | Passivation structure on back of solar battery and preparation method thereof |
| CN112201701A (en) * | 2020-09-30 | 2021-01-08 | 浙江晶科能源有限公司 | Solar cell and photovoltaic module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115036374A (en) | 2022-09-09 |
| CN117080277A (en) | 2023-11-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115036375B (en) | Solar cell, manufacturing method thereof and solar module | |
| CN115132851B (en) | Solar cell, manufacturing method thereof and photovoltaic module | |
| CN115188833B (en) | Solar cell, manufacturing method thereof and photovoltaic module | |
| CN218182221U (en) | Solar cell and photovoltaic module | |
| CN115036374B (en) | Solar cell, manufacturing method thereof and photovoltaic module | |
| CN115472701A (en) | Solar cell and photovoltaic module | |
| CN115188834B (en) | Solar cell, preparation method thereof and photovoltaic module | |
| CN115036388B (en) | Solar cell and manufacturing method thereof | |
| CN218769547U (en) | Photovoltaic cell and photovoltaic module | |
| CN117293198A (en) | Solar cell, preparation method thereof and photovoltaic module | |
| CN117153899A (en) | Solar cell and photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |