CN115036351A - Silicon-based OLED micro display screen capable of improving brightness and manufacturing method thereof - Google Patents

Silicon-based OLED micro display screen capable of improving brightness and manufacturing method thereof Download PDF

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CN115036351A
CN115036351A CN202210666668.4A CN202210666668A CN115036351A CN 115036351 A CN115036351 A CN 115036351A CN 202210666668 A CN202210666668 A CN 202210666668A CN 115036351 A CN115036351 A CN 115036351A
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layer
film layer
micro
top surface
silicon
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张帆
赵亮
高婷
孙浩
李牧祠
刘鹏举
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Guangxi Free Trade Zone Ruixian Technology Co ltd
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Guangxi Free Trade Zone Ruixian Technology Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides a silicon-based OLED micro-display screen capable of improving brightness and a manufacturing method thereof, and the silicon-based OLED micro-display screen comprises a substrate assembly, wherein a micro-lens array film layer is coated on the top surface of the substrate assembly, a plurality of hemispherical grooves are uniformly and concavely arranged on the top surface of the micro-lens array film layer, a filling and leveling layer is coated on the top surface of the micro-lens array film layer, the bottom side of the filling and leveling layer is embedded with the hemispherical grooves to form matched filling, a color filtering film layer is arranged on the top surface of the filling and leveling layer, filtering points of the color filtering film layer are arranged in one-to-one correspondence with the hemispherical grooves, a protective layer is coated on the top surface of the color filtering film layer, a gap of the color filtering film layer embedded at the bottom side of the protective layer is contacted with the filling and leveling layer, and the top side of the protective layer is closely attached to a glass cover plate. The invention realizes that the single-pixel anode corresponds to the micro-lens array, and the light quantity is gathered before 67% of light quantity is lost through the color filter, thereby realizing that the brightness can be improved by more than 38%; meanwhile, the problem of yield loss caused by the fact that the alignment precision cannot meet the requirement does not exist.

Description

Silicon-based OLED micro display screen capable of improving brightness and manufacturing method thereof
Technical Field
The invention belongs to the field of organic electroluminescent devices, and particularly relates to a silicon-based OLED micro-display screen capable of improving brightness and a manufacturing method thereof.
Background
The OLED (Organic Light Emitting diode) has many advantages of self-luminescence, low power consumption, full solid state, wide viewing angle, high color gamut, short response time, etc., is widely applied to the display screen manufacturing industry, and is considered as a next generation display technology with great potential. The silicon-based OLED micro-display is a novel display technology for manufacturing an active light-emitting OLED on a silicon-based CMOS driving circuit substrate, and is called as a black horse of a next generation display technology. The silicon-based OLED micro-display has the advantages of small size, light weight, high resolution, high brightness, high precision and the like, can be widely applied to helmets, gun sights and night vision instruments, and has very wide application prospect in near-to-eye displays such as AR/VR and the like.
At present, the colorization of the silicon-based OLED micro display screen mostly adopts a scheme of adding a Color filter (CF for short) to white light, the brightness is basically within 800cd/m2, and more products in the market have the requirement of more than 1000cd/m2 on the brightness. The existing OLED device depends on materials and device optimization, the improved brightness is limited, and the service life of the device is influenced along with the improvement of the brightness.
The existing solution in the industry at present is to make a micro-lens array on the encapsulation cover plate glass of a product device, the micro-lens array made on the cover plate is positioned above the color filter film of the product device, and the luminous 2/3 light source of the OLED is absorbed by the color filter film and cannot penetrate through the color filter film, so that the effect of improving the brightness is limited; in addition, the problem of position alignment of the color filter film with the pixels of the product device cannot be solved by manufacturing the micro-lens array on the cover plate, because the silicon-based OLED is a high-pixel-density product, the pixel size is estimated to be 1-5 mu different, the distance between the pixels is 1-5 mu, and the alignment precision between the cover plate and the product device is more than or equal to 5 mu, the problem of light-emitting crosstalk can be caused instead when the position of a single micro-lens of the cover plate is possibly between the pixels of the product, and the yield loss is caused.
In addition, the cover plate glass-based method for manufacturing the micro lens array only by adopting photoresist curing has the advantages that the requirement for alignment between the cover plate of the micro lens array and the substrate base plate is extremely high, the physical alignment precision is required to be less than 0.5 micrometer, otherwise, the micro lens array is extremely easy to align at the interval between the color filter films, the brightness is greatly reduced, the light emitting crosstalk is caused, the yield loss is caused, the micro lens array focuses light behind the color filter films, and the brightness is improved after the color filter films, so that the brightness improving capability is limited.
Disclosure of Invention
The invention aims to solve the problems in the prior art, and provides a silicon-based OLED micro display screen and a manufacturing method thereof, wherein micro lens array process treatment is carried out between an OLED light-emitting device and a color filter film, so that light is condensed in advance, and the brightness is obviously improved.
The purpose of the invention can be realized by the following technical scheme: the utility model provides a promote silicon-based OLED microdisplay of luminance, includes the substrate subassembly, coating microlens array rete on the top surface of substrate subassembly, evenly set up a plurality of hemisphere recesses in the concave on the top surface of microlens array rete, coating levelling layer on the top surface of microlens array rete, the bottom side of levelling layer with hemisphere recess looks gomphosis forms to match and fills, set up colored filtering film layer on the top surface of levelling layer, the filtering point on colored filtering film layer with hemisphere recess one-to-one sets up, coating the protective layer on the top surface of colored filtering film layer, the bottom side embedding of protective layer colored filtering film layer's clearance with fill the levelling layer and contact, the top side and the glass apron of protective layer are closely pasted.
In the brightness-enhanced silicon-based OLED micro-display, the substrate assembly includes a pixel driving circuit substrate at the bottom layer, a pixel indium tin oxide film layer is attached to the top surface of the pixel driving circuit substrate, a light-emitting layer is covered on the top surface of the pixel indium tin oxide film layer, a thin film encapsulation layer is covered on the top surface of the light-emitting layer, and a flat layer is coated on the top surface of the thin film encapsulation layer.
In the silicon-based OLED micro-display screen with improved brightness, the center position of the color filtering film layer and the center position of the pixel indium tin oxide film layer are positioned on the same vertical line.
In the silicon-based OLED micro-display screen with improved brightness, the light-emitting layer comprises an organic light-emitting film layer and cathodes, and the cathodes are uniformly embedded in the organic light-emitting film layer.
In the brightness-enhanced silicon-based OLED micro-display screen, the flat layer is specifically a high-transmittance glue OCR film layer, and the bottom side of the high-transmittance glue OCR film layer is embedded into concave-convex gaps of the thin film packaging layer.
In the brightness-enhanced silicon-based OLED micro-display screen, the contact angle between the spherical surface of the hemispherical groove and the film packaging layer is 45-90 degrees, and the refractive index of the hemispherical groove is greater than that of the film packaging layer.
In the silicon-based OLED micro display screen with improved brightness, the cross section of a hemispherical groove in the micro lens array film layer is rectangular or circular, the width of the cross section of the hemispherical groove is 1-5 μm, and the length-width ratio of the rectangular cross section is (1:1) - (1: 2).
In the brightness-improved silicon-based OLED micro display screen, the bottom surface of the hemispherical groove is circular or elliptical, wherein the radius of the circular bottom surface is 0.5-3 um; the length of the minor axis of the elliptical bottom surface is 1.5-3 um, and the diameters of the major axis and the minor axis of the elliptical bottom surface are (1:1.1) - (1: 3).
In the brightness-improved silicon-based OLED micro display screen, the radius of the hemispherical groove is 0.5-5 mu m, and the height of the hemispherical groove is 2-3 mu m; the distance between the adjacent hemispherical grooves is 1-5 mu m.
The manufacturing method of the silicon-based OLED micro display screen for improving the brightness comprises the following steps:
1) carrying out surface indium tin oxide physical deposition coating on the manufactured pixel driving circuit substrate to form a pixel indium tin oxide film layer serving as an anode of the silicon-based OLED device;
2) sequentially carrying out glue coating, developing, photoetching and etching processes on the prepared pixel indium tin oxide film layer to prepare a red, green and blue anode pixel region;
3) carrying out evaporation coating of an OLED light-emitting film on the manufactured anode pixel area to form a light-emitting layer;
4) packaging and coating a film on the light-emitting layer to form a film packaging layer to isolate water and oxygen to protect the OLED light-emitting device;
5) coating OC glue with high water permeability on the film packaging layer in a spinning mode, and carrying out planarization treatment on the film packaging layer to finish a planarization layer;
6) spin-coating high-permeability glue on the flat layer to form a micro-lens array film layer, wherein the thickness of the micro-lens array film layer is 2-3 mu m and the micro-lens array film layer is used as a manufacturing basis of a micro-lens array matrix;
7) etching the microlens array area on the microlens array film layer by an etching process, and then soaking the microlens array film layer in a photoresist solution or removing photoresist on the upper surface of the microlens array film layer by using a plasma photoresist remover so as to obtain a hemispherical groove of the microlens array;
8) spin-coating a non-positive photoresist in a microlens array area to form a filling-leveling layer, preparing a color filtering film layer on the flat filling-leveling layer, wherein the color filtering film layer is consistent with the positions of the microlens array film layer and a pixel indium tin oxide film layer, so that a pixel red, green and blue color film of the color filtering film layer is positioned right above a hemispherical groove, and then forming an array of the color filtering film layer through exposure, development and etching processes in sequence, so that the red, green and blue color filter films are in one-to-one correspondence with the positions of the pixel red, green and blue color films;
9) dispensing on the color filter film layer to form a protective layer, covering the glass cover plate, and filling the gap between the color filter film layer and the glass cover plate with the protective layer;
10) and dispensing at the peripheral position of the glass cover plate, buckling the frame on the periphery of the glass cover plate, and laminating and curing the frame and the glass cover plate.
In the manufacturing method of the silicon-based OLED micro-display screen with improved brightness, in the step 8), the refractive index of the photoresist is greater than that of the OC glue of the flat layer, and the spin coating thickness of the photoresist is 1 mu-3.5 mu.
In the manufacturing method of the silicon-based OLED micro-display screen with improved brightness, in the step 8), the red, green and blue filter film is in a rectangular shape, the width of the rectangular shape is 1.2-5.3 μm, and the length-width ratio of the rectangular shape is (1:1) - (1: 2).
Compared with the prior art, the silicon-based OLED micro display screen with improved brightness and the manufacturing method thereof have the following beneficial effects:
according to the invention, a silicon-based product device is used as a substrate, a micro-lens array is manufactured after thin film packaging is finished, a high-permeability glue is spin-coated on a thin film packaging layer, then the micro-lens array is manufactured in a way of exposure machine, glue coating, development and etching, the position precision of the micro-lens array is below 350nm and is in one-to-one correspondence with a pixel anode matrix, the micro-lens array corresponding to a single-pixel anode is realized, the light quantity of an OLED is gathered before 67% of light is lost through a color filter, and the brightness of the OLED device can be improved by more than 38%; in addition, the invention not only has the function of obviously improving the brightness of the device, but also has no problem of yield loss caused by the fact that the alignment precision cannot meet the requirement.
Drawings
FIG. 1 is a structural diagram of the silicon-based OLED micro-display screen with improved brightness.
FIG. 2 is a process flow diagram of the method for fabricating the microlens array in the brightness enhanced silicon-based OLED microdisplay.
In the figure, 1, a pixel drive circuit substrate; 2. a pixel indium tin oxide film layer; 3. a light emitting layer; 4. a thin film encapsulation layer; 5. a planarization layer; 6. a microlens array film layer; 6a, a hemispherical groove; 7. filling and leveling the layer; 8. a protective layer; 9. a color filter film layer; 10. a glass cover plate; 11. a vertical line.
a. Steps 1) to 4) (substrate assembly); b. step 5); c. step 6); d. step 7); e. step 8); f. step 9).
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
Example one
As shown in fig. 1, the silicon-based OLED micro-display screen with improved brightness includes a substrate assembly, a microlens array film layer 6 is coated on the top surface of the substrate assembly, a plurality of hemispherical grooves 6a are uniformly and concavely formed on the top surface of the microlens array film layer 6, a leveling layer 7 is coated on the top surface of the microlens array film layer 6, the bottom side of the leveling layer 7 is embedded with the hemispherical grooves 6a to form matching filling, a color filter film layer 9 is arranged on the top surface of the leveling layer 7, the filter points of the color filter film layer 9 are in one-to-one correspondence with the hemispherical grooves 6a, a protection layer 8 is coated on the top surface of the color filter film layer 9, the gap where the bottom side of the protection layer 8 is embedded into the color filter film layer 9 is in contact with the leveling layer 7, and the top side of the protection layer 8 is closely attached to a glass cover plate 10.
The micro-lens array film layer 6 is a high-transparency glue capable of being etched, is micro-manufactured into a micro-spherical structure through transparent glue, adopts a convex lens principle, and is formed by correspondingly distributing a plurality of micro-spherical structures and anode pixel array positions (the central positions in the vertical direction are consistent). The filling layer 7 is specifically a water gel OC layer, and is used for lining the color filter film layer 9. The white OLED device is filtered out red, green and blue light by the color filter film layer 9, and full-color pictures can be displayed. The protection layer 8 is specifically a water gel OC layer, and is used to planarize the color filter film layer 9 and fill the gap between the glass cover plate 10 and the color filter film layer 9.
The substrate assembly comprises a pixel driving circuit substrate 1 at the bottommost layer, a pixel indium tin oxide film layer 2 is pasted on the top surface of the pixel driving circuit substrate 1, a light emitting layer 3 is covered on the top surface of the pixel indium tin oxide film layer 2, a film packaging layer 4 is covered on the top surface of the light emitting layer 3, and a flat layer 5 is coated on the top surface of the film packaging layer 4.
The pixel driving circuit substrate 1 is specifically an RGB pixel driving circuit substrate 1 of a silicon-based OLED. The pixel indium tin oxide film layer 2 is specifically an RGB pixel indium tin oxide film layer 2 of a silicon-based OLED, a definition layer of an RGB pixel anode pattern, and an anode for lighting the OLED. The thin film packaging layer 4 is used for protecting the OLED organic materials from being damaged by water and oxygen, and the service life of the device is prolonged.
The center of the color filter film 9 and the center of the pixel ito film 2 are located on the same vertical line 11. The color filter film layer 9 is consistent with the center position of the anode RGB pixel to ensure that the red, green and blue pixels filter the light corresponding to the red, green and blue colors after emitting light.
The light-emitting layer 3 comprises an organic light-emitting film layer and cathodes, and a plurality of cathodes are uniformly embedded in the organic light-emitting film layer. The light-emitting unit of the OLED, which emits white light when energized, is formed by the light-emitting layer 3.
The flat layer 5 is specifically a high-transparency OCR film layer, and the bottom side of the high-transparency OCR film layer is embedded into the concave-convex gap of the thin film packaging layer 4. The flattening layer 5 is used to flatten the concave-convex surface of the thin film encapsulation layer 4, thereby flattening the front surface of the micro lens array.
The contact angle between the spherical surface of the hemispherical groove 6a and the film packaging layer 4 is 45-90 degrees, and the refractive index of the hemispherical groove 6a is larger than that of the film packaging layer 4.
The cross section of the hemispherical groove 6a in the microlens array film layer 6 is rectangular or circular, the width of the cross section of the hemispherical groove 6a is 1-5 μm, and the aspect ratio of the rectangular cross section is (1:1) - (1: 2). The cross-sectional shape of the hemispherical groove 6a conforms to the pixel shape.
The bottom surface of the hemispherical groove 6a is circular or elliptical, wherein the radius of the circular bottom surface is 0.5-3 um; the length of the minor axis of the elliptical bottom surface is 1.5-3 um, and the diameters of the major axis and the minor axis of the elliptical bottom surface are (1:1.1) - (1: 3).
The radius of the hemispherical groove 6a is 0.5-5 mu m, and the height of the hemispherical groove 6a is 2-3 mu m; the distance between the adjacent hemispherical grooves 6a is 1-5 μm.
Compared with the prior art, this promote little display screen of silicon-based OLED of luminance has following beneficial effect:
according to the invention, a silicon-based product device is used as a substrate, a micro-lens array is manufactured after thin film packaging is completed, a high-transparency glue is coated on a thin film packaging layer 4 in a spinning mode, then the micro-lens array manufacturing is realized in an exposure machine, a glue coating development mode and an etching mode, the position precision of the micro-lens array is below 350nm, the micro-lens array is in one-to-one correspondence with pixel anode matrixes, the micro-lens array corresponding to a single pixel anode is realized, the OLED light quantity is gathered before 67% of light is lost through a color filter, and the brightness of the OLED device can be improved by more than 38%; in addition, the invention not only has the function of obviously improving the brightness of the device, but also has no problem of yield loss caused by that the alignment precision cannot meet the requirement.
Example two
Based on the first embodiment, the present embodiment is:
as shown in fig. 2, the method for manufacturing the silicon-based OLED micro-display screen with improved brightness includes the following steps:
as a in fig. 2:
1) carrying out surface indium tin oxide physical deposition coating on the manufactured pixel driving circuit substrate 1 to form a pixel indium tin oxide film layer 2 serving as an anode of the silicon-based OLED device;
2) sequentially carrying out gluing, developing, photoetching and etching processes on the prepared pixel indium tin oxide film layer 2 to prepare a red-green-blue anode pixel area;
3) carrying out evaporation coating of an OLED (organic light emitting diode) light emitting film on the manufactured anode pixel area to form a light emitting layer 3;
4) packaging and coating a film on the light-emitting layer 3 to form a film packaging layer 4 for isolating water and oxygen to protect the OLED light-emitting device;
as shown in fig. 2 b: 5) coating OC glue with high water permeability on the thin film packaging layer 4 in a spinning mode, and carrying out planarization treatment on the thin film packaging layer 4 to finish the planarization layer 5;
as c in fig. 2: 6) spin-coating high-permeability glue on the flat layer 5 to form a micro-lens array film layer 6, wherein the thickness of the micro-lens array film layer is 2-3 mu m, and the micro-lens array film layer is used as a manufacturing basis of a micro-lens array matrix;
as d in fig. 2: 7) etching the microlens array area on the microlens array film layer 6 by an etching process, and then soaking the microlens array film layer in a photoresist solution or removing photoresist on the upper surface by using a plasma photoresist remover to obtain a hemispherical groove 6a of the microlens array;
as shown in fig. 2 as e: 8) spin-coating an unformed and negative photoresist in a microlens array area to form a filling and leveling layer 7, preparing a color filtering film layer 9 on the flat filling and leveling layer 7, wherein the positions of the color filtering film layer 9, a microlens array film layer 6 and a pixel indium tin oxide film layer 2 are consistent, so that a pixel red, green and blue color film of the color filtering film layer 9 is positioned right above a hemispherical groove 6a, and then forming an array of the color filtering film layer 9 through exposure, development and etching processes in sequence, so that the red, green and blue color film corresponds to the pixel red, green and blue color film one by one;
in step 8), the refractive index of the photoresist is greater than that of the OC glue of the flat layer 5, and the spin coating thickness of the photoresist is 1 mu-3.5 mu.
In the step 8), the red, green and blue filter film is in a rectangular shape, the width of the rectangular shape is 1.2-5.3 μm, and the length-width ratio of the rectangular shape is (1:1) - (1: 2).
As f in fig. 2: 9) dispensing on the color filter film layer 9 to form a protective layer 8, then covering the glass cover plate 10, and filling the protective layer 8 into a gap between the color filter film layer 9 and the glass cover plate 10;
10) and dispensing at the peripheral position of the glass cover plate 10, fastening the frame on the periphery of the glass cover plate 10, and adhering and curing the frame and the glass cover plate.
Compared with the prior art, the manufacturing method of the silicon-based OLED micro display screen with improved brightness has the following beneficial effects:
according to the invention, a silicon-based product device is used as a substrate, a micro-lens array is manufactured after thin film packaging is finished, a high-transparency glue is coated on a thin film packaging layer 4 in a spinning mode, then the micro-lens array is manufactured in an exposure machine, glue coating, developing and etching modes, the position precision of the micro-lens array is below 350nm and is in one-to-one correspondence with a pixel anode matrix, the micro-lens array corresponding to a single-pixel anode is realized, the OLED light quantity is gathered before 67% of light quantity is lost through a color filter, and the brightness of the OLED device can be improved by more than 38%; in addition, the invention not only has the function of obviously improving the brightness of the device, but also has no problem of yield loss caused by that the alignment precision cannot meet the requirement.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Although the pixel drive circuit substrate 1 is used here more; a pixel indium tin oxide film layer 2; a light-emitting layer 3; a thin film encapsulation layer 4; a planarization layer 5; a microlens array film layer 6; a hemispherical groove 6 a; a filling and leveling layer 7; a protective layer 8; a color filter film layer 9; a glass cover plate 10; vertical lines 11, etc., but do not exclude the possibility of using other terms. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Claims (12)

1. The utility model provides a promote silicon-based OLED micro display screen of luminance, includes the substrate subassembly, its characterized in that, coating microlens array rete on the top surface of substrate subassembly, evenly the concave a plurality of hemisphere recesses that establish on the top surface of microlens array rete, coating levelling layer on the top surface of microlens array rete, the bottom side of levelling layer with hemisphere recess looks gomphosis forms the matching and fills, set up colored filtering film layer on the top surface of levelling layer, the filtering point on colored filtering film layer with hemisphere recess one-to-one sets up, coating protective layer on the top surface on colored filtering film layer, the bottom side embedding of protective layer the clearance on colored filtering film layer with fill the levelling layer and contact, the top side and the glass apron of protective layer are closely pasted.
2. The enhanced brightness silicon-based OLED microdisplay of claim 1 in which the substrate assembly comprises a bottom most pixel driving circuit substrate with a pixel ITO film layer attached to a top surface of the substrate, the top surface of the ITO film layer covering a light emitting layer, the top surface of the light emitting layer covering a thin film encapsulation layer, the top surface of the thin film encapsulation layer being coated with a planarization layer.
3. The OLED microdisplay of claim 2 in which the color filter layer is centered on the same vertical line as the ITO layer of the pixels.
4. The OLED microdisplay of claim 2 in which the light-emitting layer comprises an organic light-emitting layer and cathodes, and the cathodes are uniformly embedded in the organic light-emitting layer.
5. The brightness-enhanced silicon-based OLED micro-display as claimed in claim 2, wherein the planarization layer is a highly transparent adhesive OCR film layer, and the bottom side of the highly transparent adhesive OCR film layer is embedded in the concave-convex gaps of the thin film encapsulation layer.
6. The brightness-enhanced silicon-based OLED micro-display of claim 2, wherein the contact angle between the spherical surface of the hemispherical groove and the thin film encapsulation layer is 45 ° to 90 °, and the refractive index of the hemispherical groove is greater than the refractive index of the thin film encapsulation layer.
7. The OLED microdisplay of claim 1 in which the cross-section of the hemispherical recesses in the microlens array film is rectangular or circular, the width of the cross-section of the hemispherical recesses is 1-5 μm, and the aspect ratio of the rectangular cross-section is (1:1) - (1: 2).
8. The brightness-enhanced silicon-based OLED microdisplay of claim 1 in which the bottom surface of the hemispherical recesses is circular or elliptical, wherein the radius of the circular bottom surface is 0.5-3 um; the length of the minor axis of the elliptical bottom surface is 1.5-3 um, and the diameters of the major axis and the minor axis of the elliptical bottom surface are (1:1.1) - (1: 3).
9. The brightness-enhanced silicon-based OLED micro-display screen according to claim 1, wherein the radius of the hemispherical groove is 0.5-5 μm, and the height of the hemispherical groove is 2-3 μm; the distance between the adjacent hemispherical grooves is 1-5 mu m.
10. The method of claim 1 for fabricating a brightness enhanced silicon-based OLED microdisplay, comprising the steps of:
1) carrying out surface indium tin oxide physical deposition coating on the manufactured pixel driving circuit substrate to form a pixel indium tin oxide film layer serving as an anode of the silicon-based OLED device;
2) sequentially carrying out glue coating, developing, photoetching process and etching process on the prepared pixel indium tin oxide film layer to prepare a red, green and blue anode pixel area;
3) carrying out evaporation coating of an OLED light-emitting film on the manufactured anode pixel area to form a light-emitting layer;
4) performing encapsulation coating on the light-emitting layer to form a thin film encapsulation layer to isolate water and oxygen to protect the OLED light-emitting device;
5) coating OC glue with high water permeability on the film packaging layer in a spinning mode, and carrying out planarization treatment on the film packaging layer to finish a planarization layer;
6) spin-coating a high-permeability adhesive on the flat layer to form a micro-lens array film layer, wherein the thickness of the micro-lens array film layer is 2-3 mu m and the micro-lens array film layer is used as a manufacturing basis of a micro-lens array matrix;
7) etching the microlens array area on the microlens array film layer through an etching process, and then soaking the microlens array film layer in a photoresist solution or removing photoresist on the upper surface of the microlens array film layer by using a plasma photoresist remover to obtain a hemispherical groove of the microlens array;
8) spin-coating a non-positive photoresist in a microlens array area to form a filling-leveling layer, preparing a color filtering film layer on the flat filling-leveling layer, wherein the color filtering film layer is consistent with the positions of the microlens array film layer and a pixel indium tin oxide film layer, so that a pixel red, green and blue color film of the color filtering film layer is positioned right above a hemispherical groove, and then forming an array of the color filtering film layer through exposure, development and etching processes in sequence, so that the red, green and blue color filter films are in one-to-one correspondence with the positions of the pixel red, green and blue color films;
9) dispensing on the color filter film layer to form a protective layer, covering the glass cover plate, and filling the gap between the color filter film layer and the glass cover plate with the protective layer;
10) and dispensing at the peripheral position of the glass cover plate, buckling the frame on the periphery of the glass cover plate, and laminating and curing the frame and the glass cover plate.
11. The method according to claim 10, wherein in step 8), the refractive index of the photoresist is greater than the refractive index of the OC glue of the planarization layer, and the spin coating thickness of the photoresist is 1 μ to 3.5 μ.
12. The method according to claim 10, wherein in step 8), the rgb filter is in a rectangular shape, the width of the rectangular shape is 1.2 μm to 5.3 μm, and the aspect ratio of the rectangular shape is (1:1) - (1: 2).
CN202210666668.4A 2022-06-13 2022-06-13 Silicon-based OLED micro display screen capable of improving brightness and manufacturing method thereof Pending CN115036351A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024066781A1 (en) * 2022-09-30 2024-04-04 京东方科技集团股份有限公司 Display module and display apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024066781A1 (en) * 2022-09-30 2024-04-04 京东方科技集团股份有限公司 Display module and display apparatus

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