CN115029668B - Method for preparing high-performance tantalum sputtering target material by means of pad rolling - Google Patents
Method for preparing high-performance tantalum sputtering target material by means of pad rolling Download PDFInfo
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- CN115029668B CN115029668B CN202210621833.4A CN202210621833A CN115029668B CN 115029668 B CN115029668 B CN 115029668B CN 202210621833 A CN202210621833 A CN 202210621833A CN 115029668 B CN115029668 B CN 115029668B
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- 238000005096 rolling process Methods 0.000 title claims abstract description 84
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 52
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005477 sputtering target Methods 0.000 title claims abstract description 29
- 239000013077 target material Substances 0.000 title claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 20
- 238000010274 multidirectional forging Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000005242 forging Methods 0.000 claims description 13
- 238000003754 machining Methods 0.000 claims description 9
- 238000009826 distribution Methods 0.000 abstract description 14
- 230000001186 cumulative effect Effects 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 12
- 238000001953 recrystallisation Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000005266 casting Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005097 cold rolling Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004663 powder metallurgy Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21J—FORGING; HAMMERING; PRESSING METAL; RIVETING; FORGE FURNACES
- B21J5/00—Methods for forging, hammering, or pressing; Special equipment or accessories therefor
- B21J5/002—Hybrid process, e.g. forging following casting
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a method for preparing a high-performance tantalum sputtering target by pad rolling, which belongs to the technical field of sputtering target preparation. The method comprises the following steps: performing multidirectional cross rolling on the high-purity tantalum cast ingot subjected to multidirectional forging to obtain an intermediate target blank, stacking and fixing the two intermediate target blanks, performing cumulative cross rolling, and welding the target blank and a back plate to obtain a tantalum sputtering target; the microstructure of the high-purity tantalum sputtering target material obtained by the method is fine and uniform, the sputtering surface is uniform in (111) content distribution, the (111) content is less than or equal to 50% in the whole thickness direction, and the prepared high-purity tantalum sputtering target material has high microstructure uniformity and can meet the requirement of large-size wafer semiconductor sputtering coating.
Description
Technical Field
The invention belongs to the technical field of preparation of sputtering targets, and particularly relates to a method for preparing a high-performance tantalum sputtering target by means of pad rolling.
Background
The high purity Ta sputtering target is widely applied to the integrated circuit Cu interconnection line manufacturing process and is used as a barrier layer for preventing Cu from diffusing to Si. Ta target microstructure, and in particular grain orientation, can affect sputtered film thickness uniformity and electrical property uniformity. Studies have shown that Ta grains (110) sputter the fastest and (111) the slowest. Thus, grain orientation distribution is a key contributor to the fabrication of high performance Ta targets, and large size Ta target tissue uniformity has a significant impact on sputtered film performance. Since Ta is a high-stacking fault energy metal, the most easily initiated slip is {110} <111> during conventional cold plastic deformation, and thus (111) texture is very easy to form. Conventional forging-rolling-heat treatment processes tend to cause significant differences in the texture of the surface and core portions of the tantalum ingot, creating a grain orientation gradient. The longitudinal center of the Ta target can form stronger (111) texture due to plane strain in the rolling process. In order to improve uniformity of grain orientation distribution in the tantalum target, in patent US8250895B2, a method of tilting rolling is adopted for rolling a target blank, so that a strain state of the target blank is controlled, a content of a core part (111) is reduced, and a grain orientation gradient in a thickness direction is reduced. In patent US 2014/024481 A1, after forging and heat treatment of tantalum ingots for a plurality of times, cold rolling is performed by a large-roll-diameter rolling mill, and the sputtering surface directions (100) and (111) are controlled by vacuum annealing, so that the orientation distribution is uniform. Both of these methods require special equipment to be implemented. Patent US20030089429 adopts a powder metallurgy method, high-purity tantalum powder is molded in a hot pressing mode, and the orientation of the tantalum target prepared by the method is randomly distributed and uniformly distributed. However, this method may suffer from the problems of incomplete densification of the target and high oxygen content. In order to improve the uniformity of the structure in the Ta target, a method for effectively controlling the grain size and the orientation uniformity of a large-size high-purity tantalum target is needed to be provided.
Disclosure of Invention
In order to solve the problems, the invention provides a method for preparing a high-performance tantalum sputtering target by pad rolling, which comprises the following steps: performing multidirectional cross rolling on the high-purity tantalum cast ingot subjected to multidirectional forging to obtain an intermediate target blank, stacking and fixing the two intermediate target blanks, performing cumulative cross rolling, and welding the target blank and a back plate to obtain a tantalum sputtering target;
The method comprises the following specific steps:
1) Multidirectional forging is carried out on the high-purity tantalum cast ingot, and the forging process is matched with intermediate annealing so as to refine the structure;
2) Performing multidirectional cross rolling and vacuum heat treatment on the cast ingot after forging to prepare an intermediate target blank; the diameter phi of the intermediate target blank is 200-350mm, and the thickness is 20-30mm;
3) Stacking and fixing the two intermediate target blanks, and performing accumulated and stacked rolling to obtain a stacked rolled target blank with the diameter of more than or equal to phi 450mm and the thickness of 6-9mm of a single target blank;
The rolling direction is multi-direction cross rolling, the total rolling deformation is 60-80%, and the pass deformation is 10-20%;
4) Separating the target blank by machining, performing vacuum heat treatment, and controlling the grain size and orientation;
5) Welding the target blank and the backboard to obtain a tantalum sputtering target; the grain orientation of the tantalum sputtering target material is uniformly distributed, the (111) of the sputtering surface is less than 50%, and the grain size is less than or equal to 100 mu m.
Preferably, the rolling total deformation of the step 3) is 60%, and the pass deformation is 20%;
The deformation is 70%, and the pass deformation is 15%;
the deformation is 80%, and the pass deformation is 10%.
The step 1) of multidirectional forging comprises axial and radial die forging, namely radial drawing is firstly carried out, and then axial upsetting is carried out to carry out reciprocating deformation.
The multi-directional cross rolling is carried out, the rolling direction is turned for 90 degrees for 1-4 times each time, is turned for 90 degrees for 5-8 times each time,
The step 3) stacks two target blanks, the edges are fixed together, the fixing method adopts a welding or riveting mode,
Further, the fixing method in the step 3) comprises a sheath seal welding mode.
And 5) taking the surface contacted with the target blank when the target blank is stacked as a welding surface, and welding the target blank with the backboard to obtain the finished product.
The purity of the high-purity tantalum cast ingot in the step 1) is more than or equal to 99.995 percent.
The intermediate annealing temperature in the step 1) is 1100 ℃.
The vacuum heat treatment temperature of the step 2) is 1100 ℃.
The invention has the beneficial effects that:
1. The high-purity tantalum target material prepared by the method has high microstructure uniformity and can meet the requirement of large-size wafer semiconductor sputtering coating.
2. The invention adopts the mode of accumulating two target blanks and reducing the occurrence of grain orientation by multi-directional cross rolling, which is that the grain orientation distribution of the target film is more uniform, the (111) of the sputtering surface is less than 50 percent, and the grain size is less than or equal to 100 mu m.
Drawings
FIG. 1 is a flow chart of a process for preparing a high-purity tantalum target in the invention;
FIG. 2 is a graph showing the orientation profile of a tantalum sputtering target according to comparative example 1 of the present invention;
FIG. 3 is a graph showing the orientation distribution of a tantalum sputtering target in example 1 of the present invention;
FIG. 4 is an orientation distribution of tantalum sputter targets in example 1 and comparative example 1 of the present invention;
fig. 5 is a schematic view showing the rolling directions of targets in examples and comparative examples of the present invention.
Detailed Description
The invention is described in further detail below with reference to the attached drawings and specific examples:
a method for preparing a high-performance tantalum sputtering target by means of pad rolling is shown in the following figure 1: performing multidirectional cross rolling on the high-purity tantalum cast ingot subjected to multidirectional forging to obtain an intermediate target blank, stacking and fixing the two intermediate target blanks, performing cumulative cross rolling, and welding the target blank and a back plate to obtain a tantalum sputtering target;
The method comprises the following specific steps:
1) Carrying out multidirectional forging on a high-purity tantalum cast ingot with the purity of more than or equal to 99.995%, carrying out intermediate annealing at 1100 ℃ in the forging process, and refining a structure through multidirectional forging and vacuum heat treatment; the multidirectional forging comprises axial and radial die forging, namely radial drawing is firstly carried out, and then axial upsetting is carried out to carry out reciprocating deformation;
2) The cast ingot after forging is subjected to multidirectional cross rolling, and the rolling direction is in a double-cross mode, namely, the cast ingot is turned for 90 degrees each time in 1-4 passes; after the rolling is completed for the first four times, the rolling is turned to 45 degrees, the rolling is carried out for the 5 th to 8 th times, each time, the rolling direction of the 1 th to 4 th times is turned to 90 degrees, and the rolling direction of the 5 th to 8 th times is respectively crossed by 45 degrees. Vacuum heat treatment, preparing an intermediate target blank; the diameter phi of the intermediate target blank is 200-350mm, and the thickness is 20-30mm;
3) After two intermediate target blanks are stacked, the edges are fixed together, and accumulated and stacked rolling is carried out to obtain a stacked rolled target blank with the diameter of more than or equal to phi 450mm and the thickness of a single target blank of 6-9 mm; the fixing method adopts a welding or riveting mode, and particularly comprises a sheath seal welding mode.
As shown in fig. 5, the rolling direction is multi-directional cross rolling, and the rolling direction is in a double cross mode, namely, 1-4 passes are turned for 90 degrees each time; after the rolling is completed for the first four times, the rolling is turned to 45 degrees, the rolling is carried out for the 5 th to 8 th times, each time, the rolling direction of the 1 th to 4 th times is turned to 90 degrees, and the rolling direction of the 5 th to 8 th times is respectively crossed by 45 degrees. Rolling total deformation is 60-80%, and pass deformation is 10-20%;
4) Separating the target blank by machining, performing vacuum heat treatment, and controlling the grain size and orientation;
5) The surface contacted with the target blank when being stacked is used as a welding surface, and the welding surface is welded with the backboard to obtain a tantalum sputtering target; the grain orientation of the tantalum sputtering target material is uniformly distributed, the (111) of the sputtering surface is less than 50%, and the grain size is less than or equal to 100 mu m.
In order to verify the effectiveness of the method, the high-purity tantalum metal cast ingot obtained by electron beam melting is selected to be prepared by the following method, wherein the purity is more than or equal to 99.995%, and the size phi of the high-purity tantalum metal cast ingot is 150 multiplied by 100mm.
Examples
1) And (3) axially and radially forging the high-purity tantalum metal cast ingot to finish multidirectional forging. The intermediate annealing temperature of the ingot casting is 1100 ℃.
2) And (3) performing multi-directional cross rolling to obtain an intermediate target blank with the diameter phi 335mm and the thickness 20mm. And (3) carrying out recrystallization heat treatment on the intermediate target blank, wherein the heat treatment temperature is 1100 ℃.
3) Stacking the two target blanks processed in the step 2), fixing the two target blanks by adopting an electron beam welding mode at the edge for accumulated rolling, wherein the rolling direction is multi-directional cross rolling, as shown in fig. 5, the rolling direction is double-cross mode, namely, the rolling direction is changed to 90 degrees every time in 1-4 passes; after the rolling is completed for the first four times, the rolling is turned to 45 degrees, the rolling is carried out for the 5 th to 8 th times, each time, the rolling direction of the 1 th to 4 th times is turned to 90 degrees, and the rolling direction of the 5 th to 8 th times is respectively crossed by 45 degrees. The deformation is 60% and the pass deformation is 20%. The size and the diameter of the stacked rolling target blank are more than or equal to phi 450mm, and the thickness of a single target blank is 8mm.
4) The target blank is separated by machining, the machining diameter is phi 450mm, and the thickness is kept unchanged; and (3) after flattening the separated target blank, carrying out vacuum recrystallization annealing at 1100 ℃ for 2 hours to obtain a uniform and refined recrystallized microstructure.
5) And (3) taking the surface contacted with the target blank when the target blank is stacked as a welding surface, and welding with the backboard to obtain the finished tantalum sputtering target.
The results obtained are shown in Table 1, and it is seen that the crystal grain size is significantly refined, the average crystal grain size is 68.3. Mu.m, and the size distribution is uniform. The maximum content of the sputtering surface (111) projected from the longitudinal section is 38.15%.
Examples
1) And (3) axially and radially forging the high-purity tantalum metal cast ingot to finish multidirectional forging. The intermediate annealing temperature of the ingot casting is 1100 ℃.
2) And (3) performing multi-directional cross rolling to obtain an intermediate target blank with the diameter phi of 300mm and the thickness of 25mm. And (3) carrying out recrystallization heat treatment on the intermediate target blank, wherein the heat treatment temperature is 1100 ℃.
3) Stacking the two target blanks processed in the step 2), fixing the two target blanks by adopting an electron beam welding mode at the edge for accumulated rolling, wherein the rolling direction is multi-direction cross rolling, the deformation is 70%, and the pass deformation is 15%. The size and the diameter of the stacked rolling target blank are more than or equal to phi 450mm, and the thickness of a single target blank is 7.5mm.
4) The target blank is separated by machining, the machining diameter is phi 450mm, and the thickness is kept unchanged; and (3) after flattening the separated target blank, carrying out vacuum recrystallization annealing at 1100 ℃ for 2 hours to obtain a uniform and refined recrystallized microstructure.
5) And (3) taking the surface contacted with the target blank when the target blank is stacked as a welding surface, and welding with the backboard to obtain the finished tantalum sputtering target.
The results obtained are shown in Table 1, and it can be seen that the crystal grain size is significantly refined, the average crystal grain size is 72.6. Mu.m, and the size distribution is uniform. The maximum content of the sputtering surface (111) projected from the longitudinal section is 37.21%.
Examples
1) And (3) axially and radially forging the high-purity tantalum metal cast ingot to finish multidirectional forging. The intermediate annealing temperature of the ingot casting is 1100 ℃.
2) And (3) performing multi-directional cross rolling to obtain an intermediate target blank with the diameter phi 273.8mm and the thickness of 30mm. And (3) carrying out recrystallization heat treatment on the intermediate target blank, wherein the heat treatment temperature is 1100 ℃.
3) Stacking the two target blanks processed in the step 2), fixing the two target blanks by adopting an electron beam welding mode at the edge to carry out accumulated rolling, wherein the rolling direction is multidirectional cross rolling, the deformation is 80%, and the pass deformation is 10%. The size and the diameter of the stacked rolling target blank are more than or equal to phi 450mm, and the thickness of a single target blank is 6mm.
4) The target blank is separated by machining, the machining diameter is phi 450mm, and the thickness is kept unchanged; and (3) after flattening the separated target blank, carrying out vacuum recrystallization annealing at 1100 ℃ for 2 hours to obtain a uniform and refined recrystallized microstructure.
5) And (3) taking the surface contacted with the target blank when the target blank is stacked as a welding surface, and welding with the backboard to obtain the finished tantalum sputtering target.
The results obtained are shown in Table 1, and it can be seen that the crystal grain size is significantly refined, the average crystal grain size is 75.8. Mu.m, and the size distribution is uniform. The content of the sputtering surface (111) projected from the longitudinal section was 40.53% at the maximum.
To verify the effectiveness of the methods of the present invention, a conventional thermo-mechanical processing process was used to prepare tantalum targets, in contrast to the targets of the present invention. The material is still selected to be electron beam smelted into high-purity tantalum metal cast ingot, the purity is more than or equal to 99.995%, and the size phi of the cast ingot is 150 multiplied by 100mm. The method comprises the following specific steps:
1. And (5) performing axial and radial die forging on the cast ingot to finish multidirectional forging. Annealing temperature in the ingot casting process is 1100 ℃, and annealing time is 2h. The diameter phi of the target blank is 223mm and the thickness is 45mm.
2. And (3) performing multidirectional cross rolling, wherein the deformation is 80%, the pass deformation is 15%, and the purpose is to refine grains further by using a deformation process. The size and the diameter of the target blank are larger than or equal to phi 450mm, and the thickness of the target blank is 9mm.
3. And (5) vacuum recrystallization annealing, wherein the annealing temperature is 1100 ℃, and the annealing time is 2h.
4. And processing the prepared plate blank into a target finished product.
The results obtained are shown in Table 1, and it can be seen that the average grain size is 85.5. Mu.m, and the core grain size is large. The content of the sputtering surface (111) projected from the longitudinal section was 83.54%.
1. And (5) performing axial and radial die forging on the cast ingot to finish multidirectional forging. Annealing temperature in the ingot casting process is 1100 ℃, and annealing time is 2h.
2. And (3) performing multi-directional cross rolling to obtain the target blank with the diameter phi 300mm and the thickness 25mm. And (5) carrying out recrystallization heat treatment on the target blank. The heat treatment temperature was 1100 ℃.
3. And (3) performing multi-directional cross rolling, wherein the deformation is 70%, the pass deformation is 20%, and the purpose is to refine grains further by using a deformation process. The size and the diameter of the target blank are larger than or equal to phi 450mm, and the thickness of the target blank is 7.5mm.
4. And (5) vacuum recrystallization annealing, wherein the annealing temperature is 1100 ℃, and the annealing time is 2h.
5. And processing the prepared plate blank into a target finished product.
The results obtained are shown in Table 1, and the average grain size is 82.3. Mu.m. The maximum content of the sputtering surface (111) projected from the longitudinal section is 85.32%.
The results of the comparative examples and comparative examples show that the crystal grain size is finer in the examples and the average crystal grain size is not more than 100. Mu.m. The (111) content of the sputtering surface is entirely lower than 50%. Fig. 2 shows the microstructure of the longitudinal section of example 1, from which it is apparent that the grain size distribution is uniform and the content distribution of the sputtering surface at the core position (111) is uniform. FIG. 3 shows the microstructure of comparative example 1 in a longitudinal section, from which it can be seen that the core of the grain size is large and the content of the sputtering surface at the core position (111) is remarkably increased. Fig. 4 is a graph showing the distribution of the content of the target sputtering surface in the entire longitudinal section (111) in example 1 and comparative example 1, and from the graph, it is shown that the content of the target sputtering surface in the center portion (111) in comparative example rapidly increases, and the gradient of orientation in the entire thickness direction is large, and the uniformity of the thin film is deteriorated when the orientation is sputtered to the center portion of the thickness. The target material prepared by the method has more uniform orientation distribution, and the high-purity tantalum target has better sputtering stability, and can meet the requirement of high-end semiconductor integrated circuits.
Table 1 comparative table of results of preparation of targets according to examples and comparative examples of the present invention
| Grain size | Maximum value of sputtering surface (111) | |
| Example 1 | 75.8μm | 38.15% |
| Example 2 | 72.6μm | 37.21% |
| Example 3 | 68.3μm | 40.53% |
| Comparative example 1 | 85.5μm | 83.54% |
| Comparative example 2 | 82.3μm | 85.32% |
Claims (4)
1. A method for preparing a high-performance tantalum sputtering target by means of pad rolling is characterized by comprising the following steps: performing multi-directional cross rolling on the high-purity tantalum cast ingot subjected to multi-directional forging to obtain an intermediate target blank, stacking and fixing the two intermediate target blanks, performing accumulated cross-lapping rolling, and welding the target blank and a backboard to obtain a tantalum sputtering target;
The method comprises the following specific steps:
step 1) performing multidirectional forging on a high-purity tantalum cast ingot, wherein the forging process is matched with intermediate annealing operation;
step 2) performing multidirectional cross rolling and vacuum heat treatment on the forged cast ingot to prepare an intermediate target blank; the diameter phi of the intermediate target blank is 200-350mm, and the thickness is 20-30mm;
The multi-directional cross rolling is carried out in a double cross mode, namely, the rolling direction is turned for 90 degrees each time in 1-4 passes; after finishing the first four times of rolling, turning to 45 degrees, and carrying out 5 th-8 th-pass rolling, wherein each time of turning to 90 degrees, the 1-4 th-pass rolling direction and the 5 th-8 th-pass rolling direction respectively form 45-degree crisscross;
Step 3) stacking two target blanks, fixing edges of the two target blanks together, and performing accumulated rolling in a welding or riveting mode by a fixing method to obtain a rolled target blank with the diameter of more than or equal to phi 450mm and the thickness of a single target blank of 6-9 mm;
the rolling direction is multi-direction cross rolling;
The total rolling deformation of the step 3) is 60%, and the pass deformation is 20%;
the deformation of the step 3) is 70%, and the pass deformation is 15%;
The deformation of the step 3) is 80%, and the pass deformation is 10%;
step 4), separating the target blank by machining, performing vacuum heat treatment, and controlling the grain size and orientation;
Step 5) taking the surface contacted with the target blank when being stacked as a welding surface, and processing a finished product after welding with the backboard;
The grain orientation of the tantalum sputtering target material is uniformly distributed, the (111) of the sputtering surface is less than 40.53%, and the grain size is less than or equal to 75.8 mu m.
2. The method of preparing a high performance tantalum sputtering target according to claim 1, wherein said step 1) multi-directional forging comprises axial and radial swaging.
3. The method for preparing the high-performance tantalum sputtering target material by means of pad rolling according to claim 1, wherein the purity of the high-purity tantalum cast ingot obtained in the step 1) is more than or equal to 99.995%.
4. The method for preparing a high-performance tantalum sputtering target material by means of pad rolling according to claim 1, wherein the annealing temperature in the step 1) is 1100 ℃, and the vacuum heat treatment temperature in the step 2) is 1100 ℃.
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|---|---|---|---|---|
| CN1659305A (en) * | 2002-09-20 | 2005-08-24 | 株式会社日矿材料 | Tantalum sputtering target and method for preparation thereof |
| CN105525263A (en) * | 2015-12-23 | 2016-04-27 | 有研亿金新材料有限公司 | Preparation method for high-performance tantalum sputtering target |
| CN106399954A (en) * | 2016-08-30 | 2017-02-15 | 有研亿金新材料有限公司 | Processing method of long-service-life copper manganese alloy target material |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1659305A (en) * | 2002-09-20 | 2005-08-24 | 株式会社日矿材料 | Tantalum sputtering target and method for preparation thereof |
| CN105525263A (en) * | 2015-12-23 | 2016-04-27 | 有研亿金新材料有限公司 | Preparation method for high-performance tantalum sputtering target |
| CN106399954A (en) * | 2016-08-30 | 2017-02-15 | 有研亿金新材料有限公司 | Processing method of long-service-life copper manganese alloy target material |
Non-Patent Citations (1)
| Title |
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| 钽材轧制和再结晶织构演变研究进展;潘文高等;材料导报;第30 卷(第11期);第150-156页 * |
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