CN115020594A

CN115020594A - Perovskite photoelectric device and preparation method thereof

Info

Publication number: CN115020594A
Application number: CN202210738425.7A
Authority: CN
Inventors: 蔡宁; 赵鑫; 罗瑞希; 梁智华; 董一凡; 霍延平
Original assignee: Guangdong University of Technology
Current assignee: Guangdong University of Technology
Priority date: 2022-06-27
Filing date: 2022-06-27
Publication date: 2022-09-06

Abstract

The invention discloses a perovskite photoelectric device and a preparation method and application thereof, belonging to the technical field of photoelectricity. The preparation method comprises the following steps: preparing a hole transport layer on a transparent electrode, preparing an interface layer on the hole transport layer, preparing a perovskite light absorption layer on the interface layer, preparing an electron transport layer on the perovskite light absorption layer, preparing a hole blocking layer on the electron transport layer, and depositing an electrode material on the hole blocking layer. In the invention, an interface layer is preferentially prepared on the hole transport layer, and then the perovskite light absorption layer is prepared. The growth of perovskite crystal grains is regulated and controlled by the interface layer, the morphology of the crystal grains is improved, the crystal grains have no pinholes, the crystal boundary gaps are obviously reduced, and the film forming quality of the perovskite is improved; the reduction of the crystal boundary improves the recombination of carriers and reduces the photoelectric loss; meanwhile, the surface energy is improved by introducing the interface layer, so that the perovskite precursor liquid can be better spread on the surface of the interface layer, and the large-area preparation of the perovskite photoelectric device is realized.

Description

Perovskite photoelectric device and preparation method thereof

Technical Field

The invention relates to the technical field of photoelectricity, in particular to a perovskite photoelectric device and a preparation method thereof.

Background

Under the current situation that the problem of environmental pollution is difficult to be radically treated, the solar cell is developed, the utilization rate of light energy is greatly improved, fossil fuel is not consumed in the conversion process from the light energy to the electric energy, and therefore carbon emission is reduced.

Solar cells have been developed over decades and can now be broadly classified into crystalline silicon solar cells (mono-crystalline silicon and poly-crystalline silicon), thin film solar cells, and new solar cells. The efficiency of the crystalline silicon solar cell is nearly up to the theoretical upper limit (the theoretical upper limit is 29%, and the laboratory maximum efficiency is 26.7%), and the photoelectric conversion efficiency of the single-junction perovskite solar cell has a large rising space (the theoretical upper limit is 35%, and the laboratory maximum efficiency is 25.7%). Although the efficiency of the perovskite solar cell device approaches that of a crystalline silicon cell, the stability (including placement stability, humidity/heat/light stability, output stability of continuous operation of the maximum power point, and the like) and the large-area preparation of the device still need to be further enhanced. Regarding the large-area preparation of devices, researchers at home and abroad mostly start with the device preparation process, and realize the preparation of large-area devices by developing novel equipment or a manufacturing process, but deep-level defects or pinholes can not be fundamentally solved when a perovskite layer is deposited through equipment optimization, so that the commercial development of perovskite solar cells is not facilitated.

In order to improve the crystal boundary defect formed by the perovskite layer, polyvinylpyrrolidone (PVP) is used as a passivation layer and is introduced between an electron transmission layer and a perovskite light absorption layer of the perovskite solar cell in the prior art, the crystal boundary defect on the surface of the perovskite is successfully passivated by utilizing the principle that C ═ O in the polyvinylpyrrolidone is easy to form a complex with various organic and inorganic substances, and the photoelectric property of the perovskite solar cell is greatly improved. However, since the perovskite light absorption layer is prepared first and the PVP passivation layer is introduced after the perovskite light absorption layer is prepared, the PVP passivation layer can only passivate the grain boundary defect on the surface of the perovskite by means of compensation and modification, but cannot improve the grain boundary defect inside the perovskite layer. Moreover, a hydrophobic interface is formed after the hole transport material is annealed, so that the perovskite precursor liquid on the upper layer cannot spread on the surface of the hole transport layer in a large area, and thus, the large-scale preparation of the device cannot be realized.

Disclosure of Invention

The invention aims to solve the defects that the prior art can not thoroughly improve the defect of the internal crystal boundary of a perovskite layer and the problem that a perovskite precursor liquid can not spread on a hole transmission layer in a large area, and provides a preparation method of a perovskite photoelectric device.

It is another object of the present invention to provide a perovskite photovoltaic device prepared by the above method.

The technical problem to be solved by the invention is realized by the following technical scheme:

a preparation method of a perovskite photoelectric device comprises the following steps:

s1, preparing a hole transport layer on a transparent electrode;

s2, preparing an interface layer: preparing an interface layer material solution, and preparing an interface layer on the hole transport layer in S1;

s3, preparing a perovskite light absorption layer: preparing a perovskite layer on the interface layer in S2;

s4, preparing an electron transport layer: preparing an electron transport layer on the perovskite light absorption layer in S3;

s5, preparing a hole blocking layer: preparing a hole blocking layer on the electron transport layer in S4;

s6, preparing a metal back electrode: an electrode material is deposited on the hole blocking layer in S5.

Among them, it should be noted that:

the working principle of perovskite optoelectronic devices is as follows:

when sunlight is incident on the perovskite light-absorbing layer of the perovskite photoelectric device, and E _{Incident photons} >E _g (E _{Incident photons} Refers to the energy of the incident light, E _g Which refers to the band gap of a perovskite light-absorbing layer), the light-absorbing layer absorbs photons and is excited to generate excitons (i.e., hole-electron pairs). The valence band edge of the perovskite layer is lower than the HOMO energy level of the hole transport layer, and the conduction band edge of the perovskite layer is higher than the LUMO energy level of the electron transport layer, so that excitons are separated on two interfaces of the hole transport layer/perovskite light absorption layer/electron transport layer, holes and electrons are respectively injected into the hole transport layer and the electron transport layer and are respectively collected by the back electrode and the ITO conductive substrate, and finally, current is formed through an external circuit and the working cycle is completed.

In the preparation process of the perovskite photoelectric device, due to crystal internal defects and crystal boundary defects caused by poor growth among crystal grains, carriers are subjected to non-radiative recombination, and finally, the photovoltage loss of the perovskite photoelectric device is caused. For internal crystal defects, point defects, line defects, and area defects are included. The grain boundary defect belongs to a surface defect, refers to a boundary region between crystal grains, and is an interface between adjacent crystal grains with different spatial orientations (or positions). The electron trap states caused by grain boundary defects are a source of nonradiative carrier recombination. According to the invention, the perovskite energy level is regulated and controlled through the interaction of the amide group in the interface layer material and methylamine and formamidine ions with similar structures in the methylamine-formamidine group mixed perovskite component, so that the perovskite energy level is more matched with other functional layers, and the perovskite is induced to generate high-quality crystals with less crystal boundary defects, thereby reducing the crystal boundary, improving the compounding of non-radiative carriers, reducing the photovoltage loss and improving the photoelectric efficiency of the perovskite photoelectric device. The reduction of grain boundaries also improves the film forming properties of the perovskite layer.

In addition, a hydrophobic interface can be formed after the hole transport material is annealed, so that the perovskite precursor liquid on the upper layer cannot spread on the surface of the perovskite precursor liquid in a large area, and the interface layer forms a high-surface-energy interface on the surfaces of the hole transport layers of different types, so that the wettability of the hole transport layers on the perovskite precursor liquid is enhanced, the precursor liquid can be better spread on the interface layer, and the large-area preparation of the device is realized.

In the preparation method of the perovskite photoelectric device, the interface layer material is an amide high-molecular polymer. Amide groups in the interface layer material can interact with methylamine, formamidine and cesium ions in the perovskite component, so that the energy level of the perovskite light absorption layer is matched with other functional layers, and the grain boundary is reduced.

In the preparation method of the perovskite photoelectric device, the amide high-molecular polymer is polyvinylpyrrolidone. Compared with other amide high-molecular polymers, the polyvinylpyrrolidone PVP as an interface material has better hydrophilicity for the perovskite precursor liquid, so that the precursor liquid is easier to spread on the interface layer, and the efficiency of the device is better.

In the preparation method of the perovskite photoelectric device, the molecular weight of polyvinylpyrrolidone in the preparation method is 8000-1300000. Since PVP is soluble in the solvent of the perovskite precursor solution, interface molecules having a relatively large molecular weight are required to exhibit the anti-solvent property after film formation, and if the molecular weight is too small, the interface molecules may be destroyed by the precursor solution, while if the molecular weight is too large, the solubility in an alcohol solvent is poor.

Preferably, the molecular weight of polyvinylpyrrolidone in the preparation method of the perovskite photoelectric device is 58000-220000. When the molecular weight of the polyvinylpyrrolidone is 220000, the photoelectric property is better.

In the preparation method of the perovskite photoelectric device, the interface layer is prepared by a solution method.

In the preparation method of the perovskite photoelectric device, the concentration of the polyvinylpyrrolidone solution is 0.1-1.0 mg/mL.

PVP has an insulating property, and if the concentration is too high, charge transport is severely hindered, and if the concentration is too low, the interface material cannot form a uniform and dense thin film on the hydrophobic hole transport layer.

Preferably, the concentration of the polyvinylpyrrolidone solution in the preparation method of the perovskite photoelectric device is 0.25-1.0 mg/mL. When the concentration of the polyvinylpyrrolidone solution is 0.25mg/mL, the photoelectric performance is better.

In the preparation method of the perovskite photoelectric device, the method for attaching the interface layer to the surface of the hole transport layer comprises a spin coating method, a blade coating method, a slit extrusion coating method, an ink jet printing method, a solution soaking method, a gas spraying method, a vacuum flash evaporation method and the like.

In the preparation method of the perovskite photoelectric device, the solvent of the interface material solution comprises isopropanol, ethanol, methanol, tert-butyl alcohol, acetonitrile and N-methylpyrrolidone.

According to the invention, the perovskite photoelectric device prepared by the preparation method of the perovskite photoelectric device comprises a perovskite solar cell, a light emitting diode and a photoelectric detector.

Preferably, the perovskite photoelectric device is a perovskite solar cell, and the effective area of the perovskite solar cell can reach 0.8cm ² 。

In the invention, the hole transport layer is any one of a polymer hole transport layer and a small molecule hole transport layer. Specifically, the polymer hole transport layer is PTAA, and the small molecule hole transport layer is N01-3,3'- (4,8-bis (hexyloxy) benzol [1,2-b:4,5-b']dithiophene-2,6-diyl)bis(10-(6-bromohexyl)-10H-p henoxazine)，

Compared with the prior art, the invention has the beneficial effects that:

according to the preparation method of the perovskite photoelectric device, the amide high-molecular polymer interface layer is prepared on the surface of the hole transport layer, and then the perovskite layer is formed, the interface layer has an obvious regulation and control effect on the growth of perovskite grains, the appearance of the grains is improved due to the introduction of the interface layer, the grains have no pinholes, and grain boundary gaps are obviously reduced, so that the film forming quality of the perovskite is improved, the film forming quality of the perovskite is improved due to the reduction of the grain boundaries, the compounding of current carriers is improved, the photoelectric loss is reduced, and the photoelectric conversion efficiency of the device is improved.

In the preparation method of the perovskite photoelectric device, the surface energy of the hole transport layer is improved by introducing the interface layer, so that the perovskite precursor liquid can be better spread on the surface of the hole transport layer, the efficiency of the device is improved, and the large-area preparation of the perovskite photoelectric device is realized.

Drawings

FIG. 1 is a graph comparing J-V curves for perovskite photovoltaic devices of example 1 and comparative examples 1, 2.

FIG. 2 is a graph comparing J-V curves for perovskite photovoltaic devices of example 9 and comparative example 4.

FIG. 3 is a J-V curve comparison diagram of perovskite photoelectric devices of examples 1-4.

FIG. 4 is a J-V curve comparison graph of perovskite photoelectric devices of examples 1, 5-7 and comparative example 6.

FIG. 5 is a J-V curve comparison of perovskite photovoltaic devices of example 8 and comparative example 3 of the present invention.

FIG. 6 is a J-V curve comparison of perovskite photovoltaic devices of example 10 of the present invention and comparative example 5.

FIG. 7 is a comparison of the water contact angle experiments of example 1 and comparative example 1 in the present invention.

FIG. 8 is a Scanning Electron Microscope (SEM) top view comparison of perovskite thin films of example 1 and comparative example 1 of the present invention.

FIG. 9 is a Scanning Electron Microscope (SEM) top view comparison of perovskite thin films of example 9 and comparative example 4 of the present invention.

Detailed Description

The technical solutions of the present invention will be described below clearly and completely with reference to specific embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. Other embodiments, which can be derived by one of ordinary skill in the art from the embodiments given herein without any creative effort, shall fall within the scope of the present invention.

Example 1

s1, cleaning transparent conductive substrate ITO conductive glass

Cleaning ITO conductive glass, sequentially soaking the conductive glass in a detergent, deionized water, acetone and absolute ethyl alcohol, ultrasonically cleaning, and finally cleaning the surface of the ITO by using ultraviolet ozone;

s2, preparing a hole transport layer

Solution preparation: dissolving poly [ bis (4-phenyl) (2,4, 6-trimethylphenylamine) ] (PTAA) in Chlorobenzene (CB) solvent to prepare 2mg/mL solution at room temperature, then spin-coating the PTAA solution on conductive glass cleaned in S1 at the rotating speed of 4000rmp, and then drying at 100 ℃ for 10min to obtain a hole transport layer;

s3, preparing an interface layer

Solution preparation: dissolving polyvinylpyrrolidone (PVP) with the molecular weight of 220000 in Isopropanol (IPA) solution, preparing dilute solution with the concentration of 0.25mg/mL at room temperature, then spin-coating the polyvinylpyrrolidone solution on the hole transport layer prepared in S2 at the rotating speed of 5000rmp, and then drying for 5min at the temperature of 100 ℃ to obtain an interface layer;

s4, preparing a perovskite light absorption layer

Solution preparation: mixing FAI and PbI ₂ Dissolving MAI, MACl (methylamine hydrochloride) and CsI in a mixed solution of N, N-dimethylformamide (DMF and dimethyl sulfoxide (DMSO)) with a volume ratio of 4:1, and stirring at room temperature for 4h to obtain a perovskite precursor solution, wherein A site is mainly FA ⁺ Incorporating a small amount of MA ⁺ 、Cs ⁺ And the B site is Pb ²⁺ X is I ^- 、Cl ^- The perovskite precursor solution is coated on the interface layer prepared in S3 in a rotating speed of 1000rmp and then 5000rmp, and the annealing is carried out for 30min at 100 ℃ to obtain a perovskite layer;

s5, preparing an electronic transmission layer

Solution preparation: stirring a chlorobenzene solution of [6,6] -phenyl-C61-isopropyl butyrate (PC61BM) overnight to obtain a solution with the concentration of 23mg/mL, then spin-coating a PCBM solution on the perovskite light absorption layer prepared in S4 at the rotating speed of 3000rmp, and drying at 65 ℃ for 10min to obtain an electron transport layer;

s6, preparing a hole blocking layer

Solution preparation: stirring saturated isopropanol solution of Bathocuproine (BCP), filtering, spin-coating the BCP solution on the electron transport layer prepared in S5 at a rotation speed of 5000rmp, and drying at 65 deg.C for 5min to obtain a hole blocking layer;

s7, preparing a metal back electrode

After the last layer is spin-coated, the substrate is transferred to an evaporation chamber, and an Ag electrode with the thickness of 80nm is evaporated on the surface of the substrate to obtain a complete perovskite photoelectric device and a perovskite solar cell.

Examples 2 to 10

Examples 2-10 provide methods of fabricating a series of perovskite optoelectronic devices, which differ from example 1 in table 1.

TABLE 1 examples 2 to 10

Note: the effective area refers to the area of the metal mask added during actual measurement, and does not refer to the actual area of the evaporated metal electrode.

Comparative example 1

Comparative example 1 provides a method of fabricating a perovskite photovoltaic device, which is different from example 2 in that comparative example 1 directly fabricates a perovskite light absorbing layer on a hole transport layer.

Comparative example 2

Comparative example 1 provides a method of fabricating a perovskite photoelectric device, which is different from example 2 in that comparative example 1 first fabricates a perovskite light absorption layer on a hole transport layer, and then fabricates an interfacial layer on the perovskite light absorption layer.

Comparative example 3

Comparative example 3 provides a method of fabricating a perovskite photovoltaic device, which is different from example 8 in that comparative example 3 fabricates a perovskite light absorbing layer directly on a hole transport layer.

Comparative example 4

Comparative example 4 provides a method of fabricating a perovskite photovoltaic device, which is different from example 9 in that comparative example 4 directly fabricates a perovskite light absorbing layer on a hole transport layer.

Comparative example 5

Comparative example 5 provides a method of fabricating a perovskite photovoltaic device, which is different from example 10 in that comparative example 5 fabricates a perovskite light absorbing layer directly on a hole transport layer.

Comparative example 6

Comparative example 6 provides a method of fabricating a perovskite optoelectronic device, differing from example 1 in that the PVP solution concentration is 2 mg/mL.

And (4) result characterization:

(1) J-V curves for perovskite optoelectronic devices

The test conditions for the J-V curve of a perovskite optoelectronic device are as follows:

at room temperature, in an air environment, and measured under a simulated lamp calibrated with silicon cells (light intensity is a sunlight) J-V curve, in order to make the data more accurate, each cell needs to be added with a metal mask as a light shield, which can transmit the simulated sunlight in an area of 0.062671cm ² 。

The photoelectric property data of the example 1 and the comparative examples 1 and 2, and the photoelectric property data of the example 9 and the comparative example 4 are shown in the table 2, and the J-V curve comparison graph of the perovskite photoelectric device is shown in the figures 1 and 2.

TABLE 2

In Table 2, J _sc 、V _oc And FF and PCE respectively represent the short-circuit current, the open-circuit voltage, the fill factor and the photoelectric conversion efficiency of the perovskite photoelectric device. Wherein, the larger the short-circuit current, the open-circuit voltage and the photoelectric conversion efficiency are, the perovskite photoelectric device isThe better the photovoltaic performance.

The filling factor is the maximum power and V output by the solar cell _oc ﹒J _sc The ratio of (a) to (b).

Open circuit voltage V _oc Is the coordinate of the intersection point of the J-V curve and the horizontal axis, namely the voltage value applied to the PSCs device when the short-circuit current density of the PSCs device is 0. Short-circuit current (J) _sc ) The current is the current when an external circuit is in a short circuit under the condition of illumination, and the intercept on a current axis is reflected on a J-V curve, wherein the load resistance tends to 0 at the moment, and the load voltage also tends to 0. The energy conversion efficiency (PCE) of the perovskite photoelectric device is the ratio of the maximum output power PMPP of the battery to the incident light power Pin, namely the comprehensive reflection of parameters such as Voc, Jsc and FF.

In combination with table 2 and fig. 1 and 2, it can be seen that the short-circuit current, the open-circuit voltage, and the photoelectric conversion efficiency of examples 1 and 9 are greater than those of comparative examples 1 and 2, and it can be seen that the preparation method of the perovskite photoelectric device of the present invention can improve the photoelectric properties of the perovskite photoelectric device by preparing the interface layer before the perovskite light absorption layer is prepared.

And comparing example 1 with comparative example 2, it can be seen that the preparation sequence of the interface layer is also crucial, and the photoelectric properties of the perovskite photoelectric device can be significantly improved only by preparing the interface layer on the surface of the hole transport layer and then preparing the electron transport layer on the basis of the interface layer.

It can also be seen that whether the hole transport material is polymer PTAA or small molecule N01, the preparation of the interface layer before the preparation of the perovskite light absorption layer improves the short circuit current, open circuit voltage, and photoelectric conversion efficiency of the perovskite photoelectric device, so the method for preparing the interface layer before the preparation of the perovskite light absorption layer has universality for different types of hole transport materials.

The optoelectronic performance data for examples 1-4 are shown in Table 3, wherein the J-V curve comparison of perovskite optoelectronic devices is shown in FIG. 3.

TABLE 3

	Molecular weight of PVP	J _sc /mA cm ^-2	V _oc /V	FF/％	PCE/％
						Example 1	220000	23.96	1.11	79.41	21.06
Example 2	1300000	23.74	1.06	80.13	20.15
						Example 3	58000	23.30	1.09	80.32	20.48
Example 4	8000	23.44	1.08	78.86	19.94

In combination with table 3 and fig. 3, it can be seen that when the molecular weight of PVP is 8000 to 1300000, the short-circuit current, the open-circuit voltage, and the photoelectric conversion efficiency of the perovskite photoelectric device are high, and when the molecular weight of PVP is 220000, the short-circuit current, the open-circuit voltage, and the photoelectric conversion efficiency of the perovskite photoelectric device are the highest, so that the molecular weight of PVP is preferably 220000, and the photoelectric performance of the perovskite photoelectric device can be optimized.

The optoelectronic performance data for examples 1, 5-7 and comparative example 6 are shown in table 4, wherein a J-V curve comparison plot for the perovskite optoelectronic device is shown in fig. 4.

TABLE 4

In combination with table 4 and fig. 4, it can be seen that the short-circuit current and the photoelectric conversion efficiency of the perovskite photoelectric device are high when the solution concentration of PVP is 0.1mg/mL to 1mg/mL, and the short-circuit current and the photoelectric conversion efficiency of the perovskite photoelectric device are the highest when the solution concentration of PVP is 0.25mg/mL, so that the photoelectric performance of the perovskite photoelectric device can be optimized when the solution concentration of PVP is preferably 0.25 mg/mL.

The photovoltaic performance data for example 8 versus comparative example 3 are shown in table 5, wherein the J-V curve comparison plot for the perovskite photovoltaic device is shown in fig. 5.

TABLE 5

	Effective area/cm of battery ²	J _sc /mAcm ^-2	V _oc /V	FF/％	PCE/％
						Example 8	0.814723	23.49	1.04	69.32	16.91
Comparative example 3	0.814723	23.30	0.99	64.85	15.03

Example 8, comparative example 3 and example 1 phasesIn comparison, the effective area of the cell was increased by 13 times, but it can be seen from table 5 and fig. 5 that the short-circuit current, the open-circuit voltage and the photoelectric conversion efficiency of example 8 are improved as compared with those of comparative example 3, that is, the method for manufacturing a perovskite photoelectric device in which the interface layer is prepared before the perovskite light absorption layer is prepared, for the effective area of more than 0.8cm ² The perovskite photoelectric device still has the effect of improving the photoelectric efficiency.

The optoelectronic performance data for example 10 versus comparative example 5 are shown in table 6, wherein the J-V curve comparison plot for the perovskite photovoltaic device is shown in fig. 6.

TABLE 6

	Perovskite precursor liquid formula	J _sc /mAcm ^-2	V _oc /V	FF/％	PCE/％
						Example 10	Monocationic	21.54	1.08	81.70	19.04
Comparative example 5	Monocationic	21.49	1.03	78.21	17.27

Example 10 and comparative example 5 perovskite precursor formulation used MAPbI ₃ As can be seen from table 6 and fig. 6, the short-circuit current, the open-circuit voltage, and the photoelectric conversion efficiency of example 10 are all improved as compared with those of comparative example 5, that is, the method for preparing the perovskite photoelectric device by preparing the interface layer before the preparation of the perovskite light absorption layer still has the effect of improving the photoelectric efficiency of the perovskite photoelectric device in which the perovskite precursor liquid is formulated as single cations. The perovskite photoelectric device preparation method for preparing the interface layer before the perovskite light absorption layer is prepared has certain universality for different perovskite formulas.

(2) Water contact Angle test

The interface layer of example 1 and the hole transport layer of comparative example 1 were subjected to water contact angle measurement, room temperature, air environment, measured with a video optical contact angle measuring instrument, model number OCA100, manufacturer, germany Dataphysics.

The results are shown in FIG. 7, where the left side of FIG. 7 shows the water contact angle of comparative example 1, the contact angle is 80.5 degrees, the right side shows the water contact angle of example 1, and the contact angle is 39.3 degrees. It can be seen that the preparation of the interfacial layer prior to the preparation of the perovskite light absorbing layer results in a significant reduction of the water contact angle. A smaller contact angle means a stronger surface energy, which will increase the affinity of the interfacial layer for the perovskite precursor liquid, enabling large area spreading of the perovskite precursor liquid.

(3) Scanning Electron Microscope (SEM) top view comparison of perovskite thin films

Fig. 8 is a Scanning Electron Microscope (SEM) top view comparison diagram of the perovskite thin films of comparative example 1 and example 1, the left side of fig. 8 is the SEM image of comparative example 1, and the right side is the SEM image of example 1, and in combination with fig. 8, it can be seen that in example 1, compared with comparative example 1, the surface of the perovskite thin film has no pinholes, and the voids of grain boundaries are significantly reduced, the surface of the thin film is denser, the morphology of grains is significantly improved, and the film forming quality of perovskite is significantly improved.

Fig. 9 is a Scanning Electron Microscope (SEM) top view comparison of the perovskite thin films of comparative example 4 and example 9, with the SEM image of comparative example 4 on the left and the SEM image of example 9 on the right. In comparison with comparative example 4, it can also be seen from fig. 9 that in example 9, the surface of the perovskite thin film has no pinholes, the voids of the grain boundary are significantly reduced, the surface of the thin film is denser, the morphology of the grains is significantly improved, and the film forming quality of the perovskite is significantly improved.

In conclusion, the introduction of the interface layer before the preparation of the perovskite light absorption layer can improve the growth and morphology of crystal grains, reduce crystal boundaries and improve the film forming quality of perovskite.

It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. A preparation method of a perovskite photoelectric device is characterized by comprising the following steps:

s1, preparing a hole transport layer on a transparent electrode;

s4, preparing an electronic transmission layer: preparing an electron transport layer on the perovskite light absorption layer in S3;

s6, preparing a metal back electrode: an electrode material is deposited on the hole blocking layer in S5,

the interface layer material is an amide high-molecular polymer.

2. The method of making a perovskite optoelectronic device as claimed in claim 1 wherein the high molecular polymer is polyvinylpyrrolidone.

3. The method for preparing the perovskite photoelectric device according to claim 3, wherein the molecular weight of the polyvinylpyrrolidone is 8000-1300000.

4. The method of making the perovskite optoelectronic device of claim 4, wherein the polyvinylpyrrolidone has a molecular weight of 58000 to 220000.

5. The method of making a perovskite optoelectronic device as claimed in claim 2 wherein the polyvinylpyrrolidone solution has a concentration of 0.1 to 1.0 mg/mL.

6. The method for preparing a perovskite photoelectric device according to claim 6, wherein the concentration of the polyvinylpyrrolidone solution is 0.25-1 mg/mL.

7. The method for fabricating a perovskite optoelectronic device as claimed in claim 1, wherein the solvent of the interfacial layer material solution is one or more of isopropanol, ethanol, methanol, tert-butanol, acetonitrile, N-methylpyrrolidone.

8. A perovskite optoelectronic device obtained by the preparation method according to any one of claims 1 to 7.

9. The perovskite optoelectronic device of claim 8, wherein the perovskite optoelectronic device comprises a perovskite solar cell, a light emitting diode, a photodetector.

10. The perovskite optoelectronic device of claim 9, wherein the perovskite optoelectronic device is a perovskite solar cell.