CN115020530A - Self-driven polarized light detector composed of ferroelectric heterojunction and preparation method and application thereof - Google Patents
Self-driven polarized light detector composed of ferroelectric heterojunction and preparation method and application thereof Download PDFInfo
- Publication number
- CN115020530A CN115020530A CN202210710824.2A CN202210710824A CN115020530A CN 115020530 A CN115020530 A CN 115020530A CN 202210710824 A CN202210710824 A CN 202210710824A CN 115020530 A CN115020530 A CN 115020530A
- Authority
- CN
- China
- Prior art keywords
- detector
- ferroelectric
- polarized light
- bfo
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 72
- 230000010287 polarization Effects 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 29
- 239000002243 precursor Substances 0.000 claims abstract description 27
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000001514 detection method Methods 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 10
- BWOROQSFKKODDR-UHFFFAOYSA-N oxobismuth;hydrochloride Chemical compound Cl.[Bi]=O BWOROQSFKKODDR-UHFFFAOYSA-N 0.000 claims description 30
- 239000000243 solution Substances 0.000 claims description 30
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 23
- 238000005286 illumination Methods 0.000 claims description 19
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 16
- 238000003756 stirring Methods 0.000 claims description 15
- 239000007788 liquid Substances 0.000 claims description 13
- 238000004528 spin coating Methods 0.000 claims description 13
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 11
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000002135 nanosheet Substances 0.000 claims description 8
- 229960000583 acetic acid Drugs 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000012362 glacial acetic acid Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000003760 magnetic stirring Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000004729 solvothermal method Methods 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- 238000009210 therapy by ultrasound Methods 0.000 claims description 3
- 229910002554 Fe(NO3)3·9H2O Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000009987 spinning Methods 0.000 claims description 2
- 238000013019 agitation Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 5
- 238000003980 solgel method Methods 0.000 abstract description 5
- 230000033228 biological regulation Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 42
- 230000003287 optical effect Effects 0.000 description 16
- 230000004044 response Effects 0.000 description 11
- 239000002356 single layer Substances 0.000 description 8
- 230000028161 membrane depolarization Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004364 calculation method Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910005866 GeSe Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001502 inorganic halide Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to a self-driven polarized light detector composed of a ferroelectric heterojunction, and a preparation method and application thereof. The detector sequentially comprises a transparent glass substrate, an FTO bottom electrode, a ferroelectric thin film layer, a photovoltaic material layer and an upper electrode from bottom to top; in the preparation process, a three-dimensional reticular BFO precursor solution is prepared by adopting a sol-gel method, and a BFO ferroelectric film layer with less defects and better quality is obtained by adopting a layer-by-layer annealing mode; the obtained device is provided with two different polarization states of the heterojunction device under the polarization regulation of voltages in different directions, and the application of OR and AND logic conversion is realized. The invention utilizes the sensitivity of the ferroelectric material to the polarized light to realize the self-driven polarized light detection without an external electric field.
Description
Technical Field
The invention belongs to the field of photoelectronic devices, and particularly relates to a self-driven polarized light detector formed by a ferroelectric heterojunction, and a preparation method and application thereof.
Background
The polarized light detector generates light response to the polarized information in the light source, has the advantages of obtaining multi-dimensional polarized information from the light source, shielding stray light, having high signal-to-noise ratio and imaging definition and enlarging information quantity, and is widely applied to the fields of integrated circuits, navigation, aerospace, military, medicine and the like.
Materials sensitive to polarization light are currently focused mainly on two-dimensional (2D) materials with in-plane anisotropic crystal structures, such as black phosphorus, GeSe, etc. However, the polarization ratio of the above materials is limited by the absorption anisotropy of the material/device structure, and an additional external power source is required to sense the polarization signal, so that it is difficult to realize a low-power, highly sensitive, and highly integrated polarized light detector. The photovoltaic effect of the ferroelectric material originates from the asymmetry of the crystal structure of the material, the polarization ratio of the ferroelectric material is not limited by the absorption anisotropy of the material, and the photoelectric response can be controlled under the action of an external electric field, so that the ferroelectric material is an ideal material for realizing a high-sensitivity self-driven polarized light detector.
In the prior art, a self-driven polarized light detector based on a ferroelectric photovoltaic effect and a preparation method thereof (CN 114023885A) and a ferroelectric circularly polarized light detector based on a ferroelectric photovoltaic effect and a preparation method thereof (CN 114034387A) both utilize a device structure of a single-layer organic-inorganic hybrid perovskite ferroelectric to realize self-driven polarized light detection, and because only a device structure of a single-layer organic-inorganic halide perovskite is utilized, the limitations of lower device photocurrent and poorer stability exist.
Disclosure of Invention
The invention aims to provide a self-driven polarized light detector formed by a ferroelectric heterojunction, a preparation method and application thereof, aiming at the defects in the prior art. The detector is composed of an inorganic ferroelectric film layer BiFeO 3 And the photovoltaic material layer BiOCl form the main structure of the device; in the preparation process, a three-dimensional reticular BFO precursor solution is prepared by adopting a sol-gel method, and a BFO ferroelectric film layer with less defects and better quality is obtained by adopting a layer-by-layer annealing mode; the obtained device is provided with two different polarization states of the heterojunction device under the polarization regulation of voltages in different directions to realize ORApplication of the AND logic conversion. The invention utilizes the sensitivity of the ferroelectric material to the polarized light to realize the self-driven polarized light detection without an external electric field.
The technical scheme of the invention is as follows:
a self-driven polarized light detector composed of a ferroelectric heterojunction comprises a transparent glass substrate, an FTO bottom electrode, a ferroelectric thin film layer, a photovoltaic material layer and an upper electrode from bottom to top in sequence;
the ferroelectric film layer is made of BiFeO 3 The thickness of the film is 200-600 nm;
the photovoltaic material layer is made of a BiOCl layer, and the thickness of the BiOCl layer is 100-300 nm;
the ferroelectric film layer BFO and the photovoltaic material layer BiOCL jointly form a heterojunction structure;
the upper electrode is an Au, Ag or Pt electrode layer.
The preparation method of the self-driven polarized light detector formed by the ferroelectric heterojunction comprises the following steps:
forming an FTO lower electrode on a transparent glass substrate;
step two, preparing BFO precursor liquid:
adding Bi (NO) 3 ) 3 ·5H 2 Dissolving O in ethylene glycol monomethyl ether, and mechanically stirring for 10-20 min; then adding Fe (NO) 3 ) 3 ·9H 2 Continuously mechanically stirring for 10-20min by using O, then adding glacial acetic acid, adding ethanolamine serving as a stabilizer in a water bath at the temperature of 25-30 ℃ under magnetic stirring, stirring for 4-8 h, taking out, and standing for 12-24 h at the temperature of 15-25 ℃ to obtain a BFO precursor solution;
wherein 2.5-3.5 g Bi (NO) is added into 16ml ethylene glycol monomethyl ether 3 ) 3 ·5H 2 O, 3-5 ml of glacial acetic acid and 0.3-0.5 ml of ethanolamine;
in a molar ratio of Bi (NO) 3 ) 3 ·5H 2 O：Fe(NO 3 ) 3 ·9H 2 O is 1.03-1.10: 1; preferably 1.05: 1;
the rotation speed of the mechanical stirring is 200-450 rpm;
step three, coating the BFO precursor solution on the FTO lower electrode in a spinning mode to prepare a BFO ferroelectric film layer:
on an electrode under FTO, pre-spin coating the prepared BFO precursor solution for 5-10 s at the rotating speed of 300-600r/min, and then spin coating the prepared BFO precursor solution for 10-20s at the rotating speed of 2000-3500 r/min at a high speed to prepare a layer of precursor solution film; then, the precursor liquid film is placed into a muffle furnace to be annealed at the temperature of 500-600 ℃ for 10-20min, and a layer of BFO film is obtained; repeating the processes of pre-spin coating, high-speed spin coating and annealing for 2-5 cycles, and then annealing at 500-600 ℃ for 20-40min to obtain a BFO ferroelectric film attached to the FTO substrate;
step four, growing the BiOCl nanosheet film on the BFO ferroelectric film by a solvothermal method:
taking Bi (NO) 3 ) 3 ·5H 2 Adding O into ethylene glycol, performing ultrasonic treatment for 5-10min, and stirring for 10-20min until the solution is clear; adding KCl into the mixed solution, and stirring for 20-40min until the solution is clear to obtain a growth solution; adding the growth liquid into a high-pressure reaction kettle, immersing the BFO film in the growth liquid, and growing for 1-3h at the temperature of 150-180 ℃ after sealing to obtain a BiOCl nanosheet film growing on the BFO ferroelectric film, namely a photovoltaic material layer;
wherein, 0.40-0.55 g Bi (NO) is added into every 40mL of ethylene glycol 3 ) 3 ·5H 2 O, 0.05-0.10 g of KCl;
and fifthly, sputtering Au, Ag or Pt electrodes on the BiOCl nanosheet film to obtain the self-driven polarized light detector formed by the ferroelectric heterojunction.
When the wavelength is 375nm and the illumination intensity is 1-3mW/cm 2 When the polarized light of (a) illuminates the detector; the detector shows a current value of 1 × 10 -8 -1×10 -6 A, no photocurrent is generated when the polarized light is turned off;
when the wavelength is 475nm and the illumination intensity is 1-3mW/cm 2 When the polarized light of (2) irradiates the detector, the detector shows a current value of 1 × 10 -8 -1×10 -8 A, no photocurrent is generated when the polarized light is turned off;
when the wavelength is 375nm and the illumination intensity is 1-3mW/cm 2 The polarized light has a wavelength of 475nm and an illumination intensity of 1-3mW/cm 2 Is polarized light is commonIlluminating said detector; the detector displays a current value which is 2 multiplied by 10 of the sum of the currents obtained by the two beams of light independently irradiating the device -8 -1.01×10 -6 And A, no photocurrent is generated when the polarized light is switched off.
The application of the self-driven polarized light detector formed by the ferroelectric heterojunction comprises the following steps:
the method comprises the following steps: setting the photocurrent value output by the detector, and when the current value of the output end is more than 2 multiplied by 10 -8 -6×10 -8 When A is in the range of logic "1", the current value of output end is less than 2X 10 -8 -6×10 -8 When A, the fixed time is logic '0';
step two:
the negative voltage polarization detector with the bias voltage of-3 to-8V for 10 to 20min is utilized to reduce the overall resistance value of the detector, and the photocurrent of the detector is increased compared with the original photocurrent and the current value exceeds 2 multiplied by 10 no matter the detector is illuminated under 375nm illumination, 475nm illumination or polarized light of two wave bands is illuminated simultaneously -8 -6×10 -8 A, the logic of the output end is 1, no light current exists when the polarized light is switched off, and the current value is lower than 2 multiplied by 10 -8 -6×10 -8 A, the logic of the output end is '0', and at the moment, the detector presents OR gate logic;
the detector is polarized by using forward voltage of 3-8V for 10-20min under bias voltage, so that the overall resistance of the detector is increased, the photocurrent of the detector is reduced under 375nm illumination or 475nm illumination, and the current value is less than 2 multiplied by 10 as the same as that of no photocurrent when polarized light is turned off -8 -6×10 -8 A, the logic of the output end is '0', and the photocurrent of the detector exceeds 2 multiplied by 10 when the polarized lights of two wave bands are simultaneously turned on -8 -6×10 -8 A, the logic of the output end is 1, and at the moment, the detector presents AND gate logic;
through the determination of the OR gate logic and the AND gate logic, the light detection of the ultraviolet-visible light broad spectrum and the logic operation conversion by utilizing the ferroelectric polarization modulation are realized.
The invention has the substantive characteristics that:
the method adopts a sol-gel method to prepare three-dimensional reticular BFO precursor solution, and then adopts a layer-by-layer annealing mode to obtain a BFO ferroelectric film layer with less defects and better quality; the obtained ferroelectric heterojunction polarized light detector utilizes the characteristic that the ferroelectric film is sensitive to the polarized light to realize the polarized light detection of the ferroelectric heterojunction device. During testing, natural light becomes polarized light through the polaroid and irradiates on the detector, and the direction of the polarized light is changed by rotating the polaroid, so that the photocurrent of the detector under the irradiation of the polarized light in different directions is obtained, and the detection of the polarized light is realized.
The implementation method of the logic application of the ferroelectric heterojunction polarization photodetector is shown in fig. 5, polarized light pulses of different wave bands are used as two independent input ends, the photocurrent when each input end is switched on can be used as binary coding '1', the dark current when each input end is switched off is used as binary coding '0', the current value of the device shown in fig. 1 is used as an output end, and under the polarization regulation of voltages in different directions, two different polarization states of the heterojunction device are set, so that the conversion of 'OR' and 'AND' logic is realized. The device is positively polarized, the logic function of an AND gate is realized at the output end, the generated depolarization field direction is opposite to the direction of an electric field built in a heterojunction, the separation capability of the device on photogenerated carriers is reduced, the optical response of the device is weakened, a logic 1 is obtained only when two polarized light pulses at the input end are simultaneously opened, and otherwise, a logic 0 is obtained; on the contrary, the negative pressure polarization of the device is set, the logic function of an OR gate is realized at the output end, the generated depolarization field has the same direction as the direction of the electric field in the heterojunction, the separation capability of the device on photogenerated carriers is improved, the optical response of the device is enhanced, only when two polarized light pulses at the input end are closed simultaneously, the logic '0' is obtained, otherwise, the logic '1' is obtained. Thus, the device can effectively switch logic algorithms by setting different polarization states.
The invention has the beneficial effects that:
the invention relates to a self-driven polarized light detector composed of ferroelectric heterojunction, a preparation method and application thereof. The photocurrent of the ferroelectric heterojunction device was increased by a factor of 25 compared to the single-layer ferroelectric thin film device (fig. 3). The ferroelectric film layer with less defects and better compactness is obtained by a sol-gel method through a layer-by-layer annealing mode. By utilizing the characteristics that the ferroelectric material is sensitive to the polarized light and can be polarized by an external electric field, the self-driven polarized light detection without an external electric field is realized, and the logic algorithm (table 1) can be effectively switched by setting different polarization states, so that the multifunctional photoelectric device integrating detection and logic calculation is realized, the programmable logic circuit is simplified, and the application range of the ferroelectric device is widened.
Drawings
FIG. 1 is a schematic diagram of the structure of a self-driven polarized photodetector composed of ferroelectric heterojunction according to the present invention; wherein, 1-transparent glass substrate, 2-FTO bottom electrode; 3-an inorganic ferroelectric thin film layer BFO; 4-a layer of photovoltaic material BiOCl; 5-upper electrode Au;
fig. 2 is a band gap fitting map of the BFO ferroelectric thin film layer and the BiOCl thin film layer, where fig. 2(a) is the band gap fitting of the BiOCl thin film layer and fig. 2(b) is the band gap fitting of the BFO ferroelectric thin film layer.
FIG. 3 is I-t curve diagram of BFO single-layer device and BFO/BiOCl heterojunction device, wherein FIG. 3(a) is BFO single-layer device at λ 405nm, P2 mW/cm 2 Under the illumination condition of (a), an I-t curve measured under a bias voltage of 0V, and FIG. 3(b) shows that a BFO/BiOCl heterojunction polarized light detector has a lambda of 405nm and a P of 2mW/cm 2 Under the light condition of (2), under the bias of 0V, the measured I-t curve.
FIG. 4 is an I-t curve and a photocurrent fitting curve of the BFO/BiOCl heterojunction device under different ferroelectric polarization states, wherein FIG. 4(a) is the I-t curve of the BFO/BiOCl heterojunction polarization photodetector under different ferroelectric polarization states, and FIG. 4(b) is the photocurrent fitting curve of the heterojunction device under different polarization voltages.
FIG. 5 is a diagram of an apparatus for implementing logical operations of the polarized light detector of the present invention.
Figure 6 is an XRD pattern of the BFO thin film with 5% Bi excess and 10% Bi excess.
FIG. 7 is an XRD diagram of a BFO precursor liquid film prepared by using three solvents of ethylene glycol, ethylene glycol methyl ether and acetic acid.
Detailed Description
The ferroelectric heterojunction polarization photodetector structure of the invention is shown in figure 1, and comprises a transparent glass substrate 1, an FTO bottom electrode 2 and a heterojunction structure from bottom to top in sequence: a ferroelectric thin film layer 3 and a photovoltaic material layer 4, an upper electrode 5. Preferably, the ferroelectric thin film layer in the invention is BiFeO 3 The photovoltaic material layer is a BiOCl layer, and the upper electrode is a sputtered Au electrode layer.
According to the self-driven polarized light detector formed by the ferroelectric heterojunction, the photoresponse of the device is improved by constructing the inorganic ferroelectric film layer BFO and the photovoltaic material layer BiOCl heterojunction composite layer with the vertical structure. The inorganic ferroelectric film layer is prepared by utilizing a sol-gel method, the preparation method is simple, and the stability of the film is good. The ferroelectric heterojunction device not only can realize the polarized light detection function, but also realizes the logic conversion function of the device by setting different polarization states of the device, simplifies a logic circuit and widens the application of the ferroelectric device.
The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
Example 1
As shown in fig. 1, the ferroelectric heterojunction detector structure is shown in fig. 1, and comprises a transparent glass substrate 1, an FTO bottom electrode 2, a ferroelectric thin film layer 3, a photovoltaic material layer 4, and an upper electrode 5 in sequence from bottom to top.
The invention relates to a preparation method of a heterojunction polarized light detector based on ferroelectric polarization regulation, which comprises the following steps;
wiping a transparent glass substrate 1 with an FTO 250nm lower electrode 2 sold in the market with detergent until the FTO lower electrode 2 is wiped clean to remove dust adsorbed on the surface of the FTO lower electrode; ultrasonically cleaning the FTO lower electrode 2 by using a detergent, removing organic matters and impurity particles on the surface, cleaning for 10min each time, drying for 30min in vacuum at the drying temperature of 80 ℃, and treating the surface of the substrate by using oxygen plasma to improve the work function of the substrate;
and step two, preparing BFO precursor liquid.
3.0559gBi (NO) 3 ) 3 ·5H 2 O is dissolved in 16ml of ethylene glycol methyl ether and stirred for 20min at the rotating speed of 450 rpm. 2.424g (i.e. 0.006mol) of Fe (NO) were weighed out 3 ) 3 ·9H 2 O is put into dissolved Bi (NO) 3 ) 3 ·5H 2 O (i.e. 0.0063mol, compare to Fe (NO) 3 ) 3 ·9H 2 O,Bi(NO 3 ) 3 ·5H 2 O excess is 5%), stirring is carried out at the rotating speed of 450rpm for 10min, then 4ml of glacial acetic acid is added, and magnetic stirring is carried out for 30 min. And (3) moving the beaker into a water bath kettle, magnetically stirring at 30 ℃, adding 0.4ml of ethanolamine as a stabilizer, stirring for 6 hours, taking out, and standing for 24 hours at 18 ℃ in a refrigerator to obtain a clear, transparent and dark red BFO precursor solution.
And step three, spin-coating the BFO precursor solution on the FTO lower electrode 2 to prepare the BFO ferroelectric film 3.
Sucking 0.5ml of the prepared BFO precursor solution by a dropper, dripping the solution on FTO conductive glass, pre-spin-coating the solution for 5s at the rotation speed of 600r/min to completely spread the solution on the FTO, and then starting to rotate at the rotation speed of 3500r/min for 20s to prepare a uniform precursor solution film. Putting a layer of precursor liquid film into a muffle furnace for annealing at 550 ℃ for ten minutes, and naturally cooling to room temperature to obtain a layer of BFO film; then continuously and repeatedly spin-coating the next layer; repeating 'pre-spin coating, high-speed spin coating, annealing and cooling' for 4 times, and finally putting the spin-coated film into a muffle furnace for annealing and crystallization at 550 ℃ for 30min to obtain the BFO ferroelectric film spin-coated on the FTO substrate, wherein the thickness of the BFO ferroelectric film is 270 nm.
And step four, growing the BiOCl nanosheet film 4 on the BFO ferroelectric film 3 by a solvothermal method.
1mmol of Bi (NO) is taken 3 ) 3 ·5H 2 Putting O into 40ml of glycol, performing ultrasonic treatment for 5min, and stirring for 20min until the solution is clear; and then adding 1mmol of KCl into the mixed solution, and stirring for 40min until the solution is clear to obtain a growth solution. And (3) putting the BFO film into a 100ml high-pressure reaction kettle liner, placing the BFO film into the growth liquid with the surface facing downwards, sealing, and growing for 3 hours at 160 ℃. After the reaction is finished, taking out the reaction kettle, cooling to normal temperature, washing with absolute ethyl alcohol and deionized water for several times, and washing with deionized waterDrying at 80 ℃ for 30min to obtain the BFO/BiOCl heterojunction film.
And fifthly, sputtering an Au electrode array 5 with the diameter of 2mm, the distance of 4mm and the thickness of 100nm on the BiOCl nanosheet film 4 by using an ion sputtering instrument, and finally obtaining the ferroelectric heterojunction detector.
The absorption coefficient of the film and the corresponding wavelength can calculate the corresponding light wave energy, the optical band gap of the BFO ferroelectric film and the BiOCl film can be calculated by utilizing the Tauc formula (1),
(αh) 2 ＝A(hv-Eg) (1)
where α represents the absorption coefficient, h is the planck constant, v represents the lightwave frequency, i.e., hv is the photon energy, and a is a constant. Since the BiOCl film is an indirect bandgap semiconductor, it is based on (α h) 1/2 The relationship between the energy and the photon is plotted and fitted, and the optical band gap of the BiOCl film is 3.4eV as shown in FIG. 2 (a). The BFO film is a direct bandgap semiconductor based on (α h) 2 The relationship with the photon energy is plotted and fitting calculation is carried out, and the optical band gap of the BFO film is 2.34eV as shown in figure 2(b), which is consistent with the previous reported results.
As shown in figure 3(a), under the illumination condition of 405nm, the irradiance is 2mW/cm 2 I-t curves measured for BFO single layer devices at 0V bias. The switching ratio of the device was measured to be only 40, and the photocurrent value of the BFO single layer device was low due to the weak light absorption capability and low carrier mobility of the ferroelectric material. In order to improve the photoresponse of the visible light detector, a BiOCl film is grown on the BFO ferroelectric film to form a heterojunction built-in electric field and enhance the separating capacity of photon-generated carriers. As shown in FIG. 3(b), under the illumination condition of 405nm, the irradiance is 2mW/cm 2 I-t curve of the heterojunction polarized light detector measured under 0V bias. The switch ratio of the BFO/BiOCl heterojunction device can reach 1 multiplied by 10 3 This is a 25 times increase over the switching ratio of BFO single layer devices. The BFO ferroelectric film BiOCl film forms heterojunction contact, and a built-in electric field is formed in a heterojunction junction region, so that the driving force of a photon-generated carrier is improved, and the photoelectric response of a heterojunction polarized light detector is improved.
In order to realize the logical conversion of OR and AND, the principle that the ferroelectric film can be regulated and controlled in polarization state by an external electric field is utilized, voltages in different directions/magnitudes are applied to electrodes at two ends of a heterojunction device to polarize the ferroelectric film, and then I-t curves in different ferroelectric polarization states are tested under the same test condition. As shown in fig. 4, the photocurrent of the device after applying positive voltage polarization is reduced compared to the current value of the initial state and is reduced as the applied polarization voltage is reduced, and the photocurrent of the device after applying negative voltage polarization is increased compared to the current value of the initial state and is increased as the applied polarization voltage is increased.
Due to the ferroelectric photovoltaic effect of the BFO film, the optical response of a BFO/BiOCl heterojunction device is regulated and controlled through ferroelectric polarization, polarized electrons can be generated in the ferroelectric film under the action of an external electric field, and a depolarization field E opposite to the polarization voltage direction can be generated in the ferroelectric film when the polarization voltage is removed dp . When polarized by applying a forward voltage, the BFO film generates a depolarization field E opposite to the positive voltage direction dp At this time, the built-in electric field E bi And E d p is in the opposite direction: e all ＝E bi -E dp ，E all Is the driving force for the separation of photo-generated electron-hole pairs, and E all ＜E bi Since the driving force of photogenerated carriers is reduced, the photocurrent of the device after the positive voltage polarization is applied is reduced compared to the current in the unpolarized state. When negative pressure polarization is applied, the BFO film generates a depolarization field E opposite to the negative pressure direction dp At this time E bi And E dp The directions of (a) and (b) are consistent: e all ＝E bi +E dp ，E all Is the driving force for the separation of photo-generated electron-hole pairs, and E all ＞E bi Since the driving force of photogenerated carriers increases, the photocurrent of the device increases after the negative voltage polarization is applied, compared with the current in the unpolarized state.
As can be seen from fig. 4, we can realize the optical response of the heterojunction polarization photodetector adjusted and controlled by using ferroelectric polarization, so as shown in fig. 5, a device diagram of the polarization photodetector realizing reconstruction of "or" and "logic by using different ferroelectric polarization states is constructed. This arrangement has two separate inputs: two beams of polarized light of different wave bands (comprising two LED light sources of different wave bands and two polaroids, natural light passes through the polaroids to become polarized light), photocurrent of the device is used as an output end, and the source meter can regulate and control different polarization states of the device.
As shown in table 1, the photocurrent when the light at each input terminal is on can be regarded as a binary code "1", and the dark current when the light is off can be regarded as a binary code "0". The device is set to be positively polarized under the bias voltage of 5V for 15min, the logic function of an AND gate is realized, and the photoelectric response of the device is reduced because the direction of the generated depolarization field is opposite to the direction of an electric field built in the heterojunction. Both the single-band optical response and the dual-band optical response are reduced, but the photocurrent of the dual-band optical response is a linear superposition value of two single-band currents, and only when two polarized light pulses at the input end are simultaneously switched on and the photocurrent at the output end is greater than a preset current value, a logic '1' is obtained, otherwise, the logic '0' is obtained; and on the contrary, the device is set to be subjected to negative pressure polarization at a bias voltage of-5V for 15min, the logic function of the OR gate is realized, the optical response of the device is enhanced because the direction of the generated depolarization field is the same as the direction of the electric field built in the heterojunction, the output end can display logic '1' no matter the input end is opened by the single-waveband optical pulse or the double-waveband optical pulse, and the output end can display logic '0' only when the two polarized optical pulses at the input end are closed simultaneously. By means of the voltage setting, the functions of OR and AND logic conversion can be achieved on the ferroelectric heterojunction device, and the multifunctional intelligent device integrating sensing and calculation is achieved. In the current intelligent sensing system, corresponding processing units are needed for sensing optical signals and transmitting and processing electric signals, and low conversion efficiency and large delay time exist in the process. The intelligent photoelectric device integrating sensing and calculation is successfully designed by utilizing the characteristic that a ferroelectric heterojunction device can be polarized by an external field, the ultraviolet-visible light wide-spectrum optical detection and the logical operation conversion by utilizing ferroelectric polarization modulation are realized, the power consumption and time delay caused by calculation and separation in the existing intelligent system are broken through, the logic circuit design is simplified, and a new thought is realized for a future multifunctional sensing device.
As shown in fig. 6, the XRD patterns of the BFO thin film with 5% excess of Bi and 10% excess of Bi show that when 5% excess of Bi is used, the diffraction peak intensity of the thin film is higher, the crystallinity is better, and the performance is better than when 10% excess of Bi is used. As shown in fig. 7, the BFO thin film obtained using ethylene glycol methyl ether and acetic acid as the BFO precursor solution had the best crystallinity and the best film quality, compared to using ethylene glycol methyl ether or ethylene glycol as the solvent.
Table 1 is a diagram of the inputs and outputs of the present invention for implementing the logic from or to and in different polarization states.
Example 2
The other steps are the same as example 1 except that Bi (NO) is added when BFO precursor solution is prepared 3 ) 3 ·5H 2 The content of O is 3.0559g (Bi (NO) 3 ) 3 ·5H 2 O excess 5%) was replaced with 3.2014g (Bi (NO) 3 ) 3 ·5H 2 O excess 10%);
example 3
The other steps are the same as example 1, except that when the BFO precursor solution is prepared, the solvent is replaced by 20ml of ethylene glycol monomethyl ether from 16ml of ethylene glycol methyl ether and 4ml of ice vinegar;
example 4
The other steps are the same as example 1, except that when the BFO precursor solution is prepared, the solvent is replaced by 20ml of ethylene glycol from 16ml of ethylene glycol monomethyl ether and 4ml of ice vinegar;
the products obtained in examples 2 to 4 were similar to those of example 1 in terms of the crystallinity of the films of FIGS. 6 and 7.
Comparative example 1:
the other steps are the same as example 1, except that the selective annealing is one-time annealing. The obtained BFO film has more holes, larger particles on the surface of the film and weaker photoelectric property of a heterojunction device.
The invention is not the best known technology.
Claims (6)
1. A self-driven polarized light detector composed of a ferroelectric heterojunction is characterized in that the detector sequentially comprises a transparent glass substrate, an FTO bottom electrode, a ferroelectric thin film layer, a photovoltaic material layer and an upper electrode from bottom to top;
the ferroelectric film layer is made of BiFeO 3 The thickness of the film is 200-600 nm;
the photovoltaic material layer is made of a BiOCl layer, and the thickness of the BiOCl layer is 100-300 nm;
the ferroelectric thin film layer BFO and the photovoltaic material layer BiOCL jointly form a heterojunction structure.
2. The self-driven polarization photodetector of claim 1, wherein the upper electrode is an Au, Ag or Pt electrode layer.
3. A method for fabricating a self-driven polarized photodetector comprised of a ferroelectric heterojunction as in claim 1, characterized in that the method comprises the steps of:
forming an FTO lower electrode on a transparent glass substrate;
step two, preparing BFO precursor liquid:
adding Bi (NO) 3 ) 3 ·5H 2 Dissolving O in ethylene glycol monomethyl ether, and mechanically stirring for 10-20 min; then adding Fe (NO) 3 ) 3 ·9H 2 Continuously mechanically stirring for 10-20min, adding glacial acetic acid, adding ethanolamine serving as a stabilizer in a water bath at the temperature of 25-30 ℃ under magnetic stirring, stirring for 4-8 h, taking out, and standing for 12-24 h at the temperature of 15-25 ℃ to obtain a BFO precursor solution;
wherein 2.5-3.5 g Bi (NO) is added into 16ml ethylene glycol monomethyl ether 3 ) 3 ·5H 2 O, 3-5 ml of glacial acetic acid and 0.3-0.5 ml of ethanolamine;
in a molar ratio of Bi (NO) 3 ) 3 ·5H 2 O：Fe(NO 3 ) 3 ·9H 2 O＝1.03～1.10:1；
Step three, coating the BFO precursor solution on the FTO lower electrode in a spinning mode to prepare a BFO ferroelectric film layer:
on an FTO lower electrode, pre-spin-coating the prepared BFO precursor solution for 5-10 s at the rotating speed of 300-600r/min, and then spin-coating for 10-20s at the rotating speed of 2000-3500 r/min at a high speed to prepare a layer of precursor liquid film; then, putting the precursor liquid film into a muffle furnace for annealing at 500-600 ℃ for 10-20min to obtain a layer of BFO film; repeating the processes of pre-spin coating, high-speed spin coating and annealing for 2-5 cycles, and then annealing at 500-600 ℃ for 20-40min to obtain a BFO ferroelectric film attached to the FTO substrate;
step four, growing the BiOCl nanosheet film on the BFO ferroelectric film by a solvothermal method:
taking Bi (NO) 3 ) 3 ·5H 2 Adding O into ethylene glycol, performing ultrasonic treatment for 5-10min, and stirring for 10-20min until the solution is clear; adding KCl into the mixed solution, and stirring for 20-40min until the solution is clear to obtain a growth solution; adding the growth liquid into a high-pressure reaction kettle, immersing the BFO film in the growth liquid, and growing for 1-3h at the temperature of 150-180 ℃ after sealing to obtain a BiOCl nanosheet film growing on the BFO ferroelectric film, namely a photovoltaic material layer;
wherein, 0.40-0.55 g Bi (NO) is added into every 40mL of ethylene glycol 3 ) 3 ·5H 2 O, 0.05-0.10 g of KCl;
and fifthly, sputtering Au, Ag or Pt electrodes on the BiOCl nanosheet film to obtain the self-driven polarized light detector formed by the ferroelectric heterojunction.
4. The method for fabricating a self-driven polarized photodetector comprising a ferroelectric heterojunction as in claim 1, wherein said mechanical agitation is performed at a rotation speed of 200-450 rpm.
5. Use of a self-driven polarized photodetector consisting of a ferroelectric heterojunction as claimed in claim 1, characterized in that
When the wavelength is 375nm and the illumination intensity is 1-3mW/cm 2 When the polarized light of (a) illuminates the detector; the detector displaysCurrent value of 1X 10 -8 -1×10 -6 A, no photocurrent is generated when the polarized light is turned off;
when the wavelength is 475nm and the illumination intensity is 1-3mW/cm 2 When the polarized light of (2) irradiates the detector, the detector shows a current value of 1 × 10 -8 -1×10 -8 A, no photocurrent is generated when the polarized light is turned off;
when the wavelength is 375nm and the illumination intensity is 1-3mW/cm 2 The polarized light has a wavelength of 475nm and an illumination intensity of 1-3mW/cm 2 When the polarized light of (a) together illuminates the detector; the current value displayed by the detector is the sum of the currents obtained by independently irradiating the device by two beams of light: 2X 10 -8 -1.01×10 -6 And A, no photocurrent is generated when the polarized light is switched off.
6. Use of a self-driven polarized photodetector formed of a ferroelectric heterojunction as claimed in claim 1, characterized in that it comprises the following steps:
the method comprises the following steps: setting the photocurrent value output by the detector, and when the current value of the output end is more than 2 multiplied by 10 -8 -6×10 -8 When A is in the range of logic "1", the current value of output end is less than 2X 10 -8 -6×10 -8 When A, the fixed time is logic '0';
step two:
the negative voltage polarization detector with the bias voltage of-3 to-8V for 10 to 20min is utilized to reduce the overall resistance value of the detector, and the photocurrent of the detector is increased compared with the original photocurrent and the current value exceeds 2 multiplied by 10 no matter the detector is illuminated under 375nm illumination, 475nm illumination or polarized light of two wave bands is illuminated simultaneously -8 -6×10 -8 A, the logic of the output end is 1, no light current exists when the polarized light is switched off, and the current value is lower than 2 multiplied by 10 -8 -6×10 -8 A, the logic of the output end is '0', and at the moment, the detector presents OR gate logic;
the detector is polarized by using forward voltage of 3-8V for 10-20min under bias voltage, so that the overall resistance of the detector is increased, the photocurrent of the detector is reduced under 375nm illumination or 475nm illumination, and the current value is less than 2 multiplied by 10 as the same as that of no photocurrent when polarized light is turned off -8 -6×10 -8 A, output terminalHas a logic of "0", and the photocurrent of the detector exceeds 2 x 10 only when the polarized lights of the two wave bands are simultaneously turned on -8 -6×10 -8 A, the logic of the output end is 1, and at the moment, the detector presents AND gate logic;
through the determination of the OR gate logic and the AND gate logic, the light detection of the ultraviolet-visible light broad spectrum and the logic operation conversion by utilizing the ferroelectric polarization modulation are realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210710824.2A CN115020530B (en) | 2022-06-22 | 2022-06-22 | Self-driven polarized light detector composed of ferroelectric heterojunction, and preparation method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210710824.2A CN115020530B (en) | 2022-06-22 | 2022-06-22 | Self-driven polarized light detector composed of ferroelectric heterojunction, and preparation method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115020530A true CN115020530A (en) | 2022-09-06 |
| CN115020530B CN115020530B (en) | 2023-07-21 |
Family
ID=83077546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210710824.2A Active CN115020530B (en) | 2022-06-22 | 2022-06-22 | Self-driven polarized light detector composed of ferroelectric heterojunction, and preparation method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115020530B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115855064A (en) * | 2023-02-15 | 2023-03-28 | 成都理工大学工程技术学院 | Indoor pedestrian positioning fusion method based on IMU multi-sensor fusion |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104368363A (en) * | 2014-09-19 | 2015-02-25 | 哈尔滨工业大学 | Flaky bismuth oxychloride photocatalyst material preparation method |
| CN106964376A (en) * | 2017-03-08 | 2017-07-21 | 河南师范大学 | A kind of visible light-responded BiFeO3The preparation method of/BiOCl heterojunction photocatalysts |
| CN113751036A (en) * | 2021-09-27 | 2021-12-07 | 青海师范大学 | M-type heterojunction semiconductor and preparation method and application thereof |
| CN114188434A (en) * | 2021-12-06 | 2022-03-15 | 湖州师范学院 | TiO2/BiFeO3/BiOI ternary nano heterojunction photoelectrode and preparation method and application thereof |
-
2022
- 2022-06-22 CN CN202210710824.2A patent/CN115020530B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104368363A (en) * | 2014-09-19 | 2015-02-25 | 哈尔滨工业大学 | Flaky bismuth oxychloride photocatalyst material preparation method |
| CN106964376A (en) * | 2017-03-08 | 2017-07-21 | 河南师范大学 | A kind of visible light-responded BiFeO3The preparation method of/BiOCl heterojunction photocatalysts |
| CN113751036A (en) * | 2021-09-27 | 2021-12-07 | 青海师范大学 | M-type heterojunction semiconductor and preparation method and application thereof |
| CN114188434A (en) * | 2021-12-06 | 2022-03-15 | 湖州师范学院 | TiO2/BiFeO3/BiOI ternary nano heterojunction photoelectrode and preparation method and application thereof |
Non-Patent Citations (1)
| Title |
|---|
| YUXUAN LEI等: "Preparation and photoelectrochemical properties of BiFeO3/BiOI composites", 《RSC ADVANCES》, vol. 10, pages 3 - 3 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115855064A (en) * | 2023-02-15 | 2023-03-28 | 成都理工大学工程技术学院 | Indoor pedestrian positioning fusion method based on IMU multi-sensor fusion |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115020530B (en) | 2023-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109065726B (en) | Two-dimensional layered perovskite photoelectric detector based on surface plasmon resonance and manufacturing method thereof | |
| CN115020530B (en) | Self-driven polarized light detector composed of ferroelectric heterojunction, and preparation method and application thereof | |
| CN109244246B (en) | Broadband photoelectric detector based on topological insulator bismuth selenide electrode | |
| CN109461820A (en) | Two-dimensional lead-free organic-inorganic hybrid perovskite diode photodetector and preparation method thereof | |
| CN112071989B (en) | Perovskite single crystal-based X-ray detector and preparation method thereof | |
| CN111081808A (en) | Based on MoS2/Ga2O3Heterojunction photoelectric detector, preparation method and application | |
| CN113314672A (en) | Perovskite solar cell and preparation method thereof | |
| CN110649162A (en) | Wide-spectrum self-driven inorganic perovskite photoelectric detector and preparation method thereof | |
| Zhu et al. | An enhanced solar-blind ultraviolet photodetector based on polyvinyl alcohol/carbon nanodots film | |
| CN107359251B (en) | Organic-inorganic hybrid perovskite photoelectric detector and preparation method thereof | |
| Li et al. | Layer-by-layer blade-coated organic solar cells with non-halogenated solvents and non-halogenated additive via adjusting morphology and crystallization | |
| Dong et al. | Simple fabrication of homogeneous ZnO core/shell nanorod arrays for ultraviolet photodetectors | |
| CN107180914A (en) | A kind of preparation method of perovskite thin film battery | |
| CN110265501B (en) | Be-basedxZn1-xFlexible deep ultraviolet photoelectric detector of O amorphous film and preparation method thereof | |
| CN113054114B (en) | Solar cell based on D-A type organic micromolecule doped ZnO electron transport layer and preparation method thereof | |
| Gao et al. | Regulated self-powered photoresponse properties and irradiance-adaptable behavior in ferroelectric SrTiO 3/TiO 2 heterojunction photodetectors | |
| CN115000232A (en) | Based on Cs 2 AgBiBr 6 Near infrared photoelectric detector and manufacturing method thereof | |
| Xing et al. | Waterproof and Flexible Perovskite Photodetector Enabled By P‐type Organic Molecular Rubrene with High Moisture and Mechanical Stability | |
| CN115000233A (en) | Photodiode based on stannous sulfide/indium selenide heterojunction and preparation method and application thereof | |
| CN104934230B (en) | A kind of preparation method of wide light intensity scope of application Nano tube array of titanium dioxide complex light anode | |
| CN109378407B (en) | preparation method and application of perovskite planar heterojunction | |
| CN111725337A (en) | Method for improving photoelectric property of BLFO/ZnO heterojunction by utilizing ferroelectric and piezoelectric photoelectronic effects | |
| CN106252455B (en) | It is a kind of to drive Se/ZnO heterojunction ultraviolet photodetectors and preparation method thereof certainly | |
| CN114093975A (en) | Preparation method of perovskite infrared detector | |
| Zulkifli et al. | Optical and structural properties of perovskite films prepared with two-step spin-coating method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20220906 Assignee: TIANJIN SHENGDA FIRE INDUSTRIAL Corp. Assignor: TIANJIN University OF TECHNOLOGY Contract record no.: X2024980003376 Denomination of invention: A self driven polarized light detector composed of ferroelectric heterostructures and its preparation method and application Granted publication date: 20230721 License type: Common License Record date: 20240322 Application publication date: 20220906 Assignee: TIANJIN TIAN YUAN ELECTRICAL MATERIALS CO.,LTD. Assignor: TIANJIN University OF TECHNOLOGY Contract record no.: X2024980003375 Denomination of invention: A self driven polarized light detector composed of ferroelectric heterostructures and its preparation method and application Granted publication date: 20230721 License type: Common License Record date: 20240322 |
|
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20220906 Assignee: TIANJIN ZHUJIN TECHNOLOGY DEVELOPMENT Corp. Assignor: TIANJIN University OF TECHNOLOGY Contract record no.: X2024980003446 Denomination of invention: A self driven polarized light detector composed of ferroelectric heterostructures and its preparation method and application Granted publication date: 20230721 License type: Common License Record date: 20240325 |