CN115020167A - Method for self-calibrating and controlling absorption coefficient of NEA GaN electron source - Google Patents
Method for self-calibrating and controlling absorption coefficient of NEA GaN electron source Download PDFInfo
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- CN115020167A CN115020167A CN202210457340.1A CN202210457340A CN115020167A CN 115020167 A CN115020167 A CN 115020167A CN 202210457340 A CN202210457340 A CN 202210457340A CN 115020167 A CN115020167 A CN 115020167A
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 32
- 238000005259 measurement Methods 0.000 claims description 13
- 238000012937 correction Methods 0.000 claims description 4
- 238000002835 absorbance Methods 0.000 claims description 2
- 241000769223 Thenea Species 0.000 abstract description 16
- 239000000463 material Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
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Abstract
The invention provides a method for self-calibrating and controlling absorption coefficient of an NEA GaN electron source. The specific method comprises the following steps: step 1, establishing a temperature calibration model; step 2, measuring the absorption coefficient alpha of the sample 0 Wavelength lambda of 0 And temperature T 0 Fitting sample parameters according to the data; step 3, inputting the wavelength lambda of the working incident light, the target absorption coefficient alpha and the sample parameters into a pre-established temperature calibration model to calculate the output temperature T 1 (ii) a Step 4, measuring T 1 Absorption coefficient of 1 And calculating a deviation value S 1 If S is 1 Less than set value S, output temperature T ═ T 1 If S is 1 If greater than S, according to T 1 ，α 1 Continuously correcting the sample parameters, and calculating again to obtain the temperature T 2 And comparing the deviation values S 2 And S. The temperature is calibrated according to the above steps until S n And if the temperature is less than S, outputting the optimal temperature T corresponding to alpha. Hair brushThe absorption coefficient of the NEA GaN electron source can be controlled through temperature, the self-calibration function is realized, the real-time accurate controllability of the absorption coefficient of the NEA GaN electron source can be realized, the performance parameters such as quantum efficiency and stability are finally improved, and the working performance of the NEA GaN electron source is optimized.
Description
Technical Field
The invention belongs to the technical field of semiconductors and microelectronic devices, and particularly relates to a method for self-calibrating and controlling absorption coefficients of an NEA GaN electron source.
Technical Field
The III-V family negative electron affinity photocathode is widely applied due to the characteristics of higher quantum efficiency, high brightness, deeper photoelectron escape rate, low dark current, high spin polarization, narrow energy diffusion and the like. As a third generation semiconductor, an NEA GaN photocathode has the advantages of wide forbidden band width, high quantum efficiency, good stability, radiation resistance, corrosion resistance and the like, and has very wide application in the aspects of photoetching manufacture, ultraviolet detection, electron sources and the like.
At present, the lea GaN photocathode has been studied in the field, and based on the quantum efficiency formula of the NEA GaN photocathode, the absorption coefficient of the NEA GaN electron source can affect the quantum efficiency, however, with the progress of the research, a method is urgently needed to be provided, which can realize real-time accurate control of the absorption coefficient of the NEA GaN electron source through the temperature, finally improve the performance parameters of the NEA GaN electron source, such as the quantum efficiency, the stability and the like, and optimize the working performance of the NEA GaN electron source.
Disclosure of Invention
In order to overcome the bottleneck of the prior art, the invention aims to provide a method for controlling the absorption coefficient of an NEA GaN electron source through self calibration, the absorption coefficient of the NEA GaN electron source is controlled through temperature, the method has a self calibration function, real-time accurate control of the absorption coefficient of the NEA GaN electron source can be realized, performance parameters such as quantum efficiency and stability of the NEA GaN electron source are finally improved, and the working performance of the NEA GaN electron source is optimized.
In order to achieve the purpose, the invention adopts a method for self-calibrating and controlling the absorption coefficient of an NEA GaN electron source, which comprises the following steps:
step 1, establishing a model of the relation between the temperature and the absorption coefficient, and quantitatively expressing and calculating the relation between the temperature and the absorption coefficient of the NEA GaN electron source through a formula obtained by the model.
Step 2, as an initial condition, performing initial value measurement on the inserted NEA GaN electron source, including measuring the absorption coefficient alpha of the sample 0 Wavelength lambda of 0 And temperature T 0 Measuring m sets of data, and m>And 5, fitting according to a least square method to obtain sample parameters.
Step 3, the wavelength lambda of the working incident light and the target absorption systemInputting the number alpha and the sample parameter into a pre-established temperature calibration model to calculate the output temperature T 1 。
Step 4, measuring T 1 Absorption coefficient of 1 And calculating a deviation value S 1 If S is 1 Less than set value S, output temperature T ═ T 1 If S is 1 If greater than S, according to T 1 ，α 1 Continuously correcting the sample parameters, and calculating again to obtain the temperature T 2 And comparing the deviation values S 2 And S.
The temperature is calibrated according to the above steps until S n And when the temperature is less than the set value S, outputting the optimal temperature T corresponding to the alpha, and realizing real-time control of the absorption coefficient through the temperature.
Further, the temperature calibration model is shown in formula (1)
Wherein f, b, d, p and w are sample related parameters, lambda is wavelength, alpha is target absorption coefficient, T is temperature, and h is Planck constant 6.62607015 multiplied by 10 -34 J.s.c. is the speed of light 3X 10 8 m/s。
Further, the absorption coefficient α 0 Wavelength lambda of 0 And temperature T 0 The larger the m values, the more accurate the fitting for m sets of measurements and m > 5, the sample parameters f, b, d, p, w are fitted by said m sets of measurements.
Furthermore, the wavelength lambda of the working incident light is a working wavelength value set by a system and ranges from 100nm to 365 nm; the target absorption coefficient alpha is the absorbance required by practical work and is in the range of 5.0 multiplied by 10 3 ～5.0×10 6 cm -1 。
Further, the deviation value S n For alpha in actual operation n The deviation value S is set according to the accuracy degree of actual requirements.
Further, during the correction of the sample parameter, at T n And measuring the absorption coefficients of m groups corresponding to different temperatures in the range of +/-1K, wherein m is more than 5, and the fitting is more accurate when the value of m is larger.
Further, the deviation value S n Is represented by formula (2):
wherein n is more than or equal to 1 and is a positive integer; m is greater than 5 and is a positive integer.
Further, aiming at the temperature calibration model, if the optimal temperature cannot be obtained once, calculating and correcting sample parameters for multiple times according to the model until the deviation value S n Less than S, the optimal temperature T corresponding to alpha is output.
Further, the method can accurately control the absorption coefficient of the working NEA GaN electron source on line in real time.
Furthermore, the measurement and calibration processes are automatically carried out by computer software and hardware, and only a target absorption coefficient alpha and a deviation set value S need to be input.
Compared with the prior art, the structure provided by the invention has the advantages that: according to the traditional method, the absorption coefficient can only be changed by replacing NEA GaN electron source materials, the invention can accurately control the absorption coefficient of the working NEA GaN electron source on line in real time by changing the temperature, has the function of self calibration, can realize the real-time accurate control of the absorption coefficient of the NEA GaN electron source, finally improves the performance parameters of the NEA GaN electron source, such as quantum efficiency, stability and the like, and optimizes the working performance of the NEA GaN electron source.
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FIG. 1 is a flow chart of a method for self-calibrating control of absorption coefficient of an NEA GaN electron source.
Detailed Description
The invention is described in detail below with reference to examples in order to provide a more thorough explanation of the method and advantages of the invention.
The flow chart of the method of the invention is shown in figure 1, and the method is used for self-calibrating and controlling the absorption coefficient of an NEA GaN electron source.
Example 1
The material is p-type GaN, the thickness is 100nm, and the size is 10 multiplied by 10 mm.
The GaN substrate is sapphire, the doping element is Mg, and the doping concentration is 1.0 multiplied by 16cm -3 。
The absorption coefficient alpha 0 Wavelength λ, wavelength of 0 And temperature T 0 For 100 initial sets of measurement data, sample parameters f, b, d, p, w were fitted through the 100 sets of measurement data.
The wavelength lambda of the working incident light is 340 nm; target absorption coefficient α is 1.25 × 10 5 cm -1 。
The deviation set value S is 2.45%.
During correction of the sample parameters, at T n Dividing into 100 different temperature values within + -1K with 2% accuracy, measuring the absorption coefficients at the 100 different temperatures, and determining if S is n Less than 2.45%, output temperature T ═ T n If S is n If the temperature is higher than 2.45%, the sample parameters are corrected according to 100 data sets of temperature and absorption coefficient.
The deviation value S n Is represented by formula (3):
sample parameters were corrected as described above until S n < 2.45%, output corresponding to α 1.25 × 10 5 cm -1 The optimal temperature T is 305K, and the absorption coefficient is controlled in real time through the temperature.
The measurement and calibration process are automatically carried out by computer software and hardware, and only the target absorption coefficient alpha is required to be input to be 1.25 multiplied by 10 5 cm -1 And the deviation set value S may be 2.45%.
Example 2
The material is p-type GaN, the thickness is 200nm, and the size is 10 multiplied by 10 mm.
The GaN substrate is sapphire, the doping element is Mg, and the doping concentration is 1.0 multiplied by 18cm -3 。
The absorption coefficient alpha 0 Wavelength λ, wavelength of 0 And temperature T 0 For 100 initial measurement data, byThe 100 sets of measurement data were fitted to the sample parameters f, b, d, p, w.
The wavelength lambda of the incident light is 360nm, and the target absorption coefficient alpha is 1.28 multiplied by 10 5 cm -1 。
The deviation set value S is 2.13%.
During correction of the sample parameters, at T n Dividing into 100 different values with 2% accuracy in + -1K range, measuring the absorption coefficient at 100 different temperatures, and determining if S is n Less than 2.13%, output temperature T ═ T n If S is n If the temperature is higher than 2.13%, the sample parameters are corrected according to 100 data sets of temperature and absorption coefficient.
The deviation value S n Is represented by formula (4):
sample parameters were corrected as described above until S n < 2.13%, output corresponding to α 1.28 × 10 5 cm -1 The optimal temperature T is 298K, and real-time control of the absorption coefficient through the temperature is realized.
The measurement and calibration process are automatically carried out by computer software and hardware, and only the target absorption coefficient alpha is required to be input to be 1.28 multiplied by 10 5 cm -1 And the deviation set value S may be 2.13%.
The foregoing has described the principles and steps and advantages of the present invention. The present invention is not limited to the above-described embodiments, which are described in the specification and illustrated only for illustrating the principle of the present invention, but various changes and modifications may be made within the scope of the present invention as claimed without departing from the spirit and scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. A method for self-calibrating and controlling absorption coefficient of NEA GaN electron source is characterized by comprising the following steps:
step 1, establishing a temperature calibration model.
Step 2, measuring the absorption coefficient alpha of the sample 0 Wavelength lambda of 0 And temperature T 0 Sample parameters were fitted to the data.
Step 3, inputting the wavelength lambda of the working incident light, the target absorption coefficient alpha and the sample parameter into a pre-established temperature calibration model to calculate the output temperature T 1 。
Step 4, measuring T 1 Absorption coefficient of 1 And calculating a deviation value S 1 If S is 1 Less than set value S, output temperature T ═ T 1 If S is 1 If greater than S, according to T 1 ，α 1 Continuously correcting the sample parameters, and calculating again to obtain the temperature T 2 And comparing the deviation values S 2 And S.
The temperature was calibrated according to the procedure above until S n And if the temperature is less than S, outputting the optimal temperature T corresponding to alpha, and realizing real-time control of the absorption coefficient through the temperature.
2. The method of claim 1, wherein: a temperature calibration model is established according to the formula (1)
Wherein f, b, d, p and w are sample related parameters, lambda is the wavelength, alpha is the target absorption coefficient, T is the temperature, h is the Planck constant, and c is the speed of light.
3. The method of claim 1, wherein: the absorption coefficient alpha 0 Wavelength lambda of 0 And temperature T 0 For m sets of measurement data, sample parameters f, b, d, p, w are fitted through the m sets of measurement data.
4. The method of claim 2, wherein: the wavelength lambda of the working incident light is a working wavelength value set by a system; the target absorption coefficient α is an absorbance required for practical work.
5. The method of claim 1, wherein: deviation value S n For alpha in actual operation n The error from α, S, can be set according to the degree of accuracy actually required.
6. The method of claim 5, wherein: the deviation value S n Is represented by formula (2):
7. the method of claim 1, wherein: during the correction of the sample parameters, T is measured n M groups of temperature and absorption coefficient in the range of +/-1K.
8. The method of claim 1, wherein: aiming at the temperature calibration model, if the optimal temperature cannot be obtained once, calculating and correcting the sample parameters for multiple times according to the model until the deviation value S n And if the temperature is less than S, outputting the optimal temperature T corresponding to alpha.
9. The method of claim 1, wherein: the method can accurately control the absorption coefficient of the working NEA GaN electron source on line in real time.
10. A method for self-calibrating and controlling the absorption coefficient of an NEA GaN electron source is characterized in that the measurement and calibration processes are automatically carried out by computer software and hardware, and only a target absorption coefficient alpha and a deviation set value S are required to be input.
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| CN202210457340.1A CN115020167A (en) | 2022-04-27 | 2022-04-27 | Method for self-calibrating and controlling absorption coefficient of NEA GaN electron source |
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| CN202210457340.1A CN115020167A (en) | 2022-04-27 | 2022-04-27 | Method for self-calibrating and controlling absorption coefficient of NEA GaN electron source |
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