CN115010137B - Method for rapidly preparing silicon nanowires by using cut waste silicon powder and application - Google Patents
Method for rapidly preparing silicon nanowires by using cut waste silicon powder and application Download PDFInfo
- Publication number
- CN115010137B CN115010137B CN202110244799.9A CN202110244799A CN115010137B CN 115010137 B CN115010137 B CN 115010137B CN 202110244799 A CN202110244799 A CN 202110244799A CN 115010137 B CN115010137 B CN 115010137B
- Authority
- CN
- China
- Prior art keywords
- silicon
- graphene
- powder
- silicon powder
- cut waste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 120
- 239000010703 silicon Substances 0.000 title claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000002070 nanowire Substances 0.000 title claims abstract description 56
- 239000002699 waste material Substances 0.000 title claims abstract description 54
- 239000011863 silicon-based powder Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 title claims abstract description 41
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000012528 membrane Substances 0.000 claims abstract description 23
- 239000000725 suspension Substances 0.000 claims abstract description 20
- 230000035939 shock Effects 0.000 claims abstract description 19
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 15
- 125000000524 functional group Chemical group 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 238000002156 mixing Methods 0.000 claims abstract description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 6
- 238000000967 suction filtration Methods 0.000 claims abstract description 5
- 230000009467 reduction Effects 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims description 2
- 238000000053 physical method Methods 0.000 claims description 2
- 238000004321 preservation Methods 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 12
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 abstract description 9
- 229910001416 lithium ion Inorganic materials 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000010406 cathode material Substances 0.000 abstract description 2
- 238000004064 recycling Methods 0.000 abstract description 2
- 230000001351 cycling effect Effects 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- 238000005265 energy consumption Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000001132 ultrasonic dispersion Methods 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005868 electrolysis reaction Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- 229910013872 LiPF Inorganic materials 0.000 description 1
- 101150058243 Lipf gene Proteins 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000002482 conductive additive Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009831 deintercalation Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002910 solid waste Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
- H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
The invention discloses a method for rapidly preparing silicon nanowires by using waste cut silicon powder, and belongs to the technical field of secondary resource utilization. The method is characterized in that crystalline silicon cutting waste silicon powder in the photovoltaic industry is used as a silicon source, graphene is used as a substrate, and a silicon nanowire is rapidly prepared on the graphene substrate through a high-temperature rapid thermal shock process. The preparation method comprises the following steps: (1) Mixing the cut waste silicon powder and graphene powder according to a certain proportion to prepare uniformly dispersed suspension; (2) carrying out suction filtration on the mixed suspension to prepare a filter membrane; (3) Heating the filter membrane in a reducing atmosphere to pre-reduce the functional groups in the graphene partially; (4) And (3) carrying out electro-thermal shock on the pre-reduced filter membrane to prepare the graphene-loaded silicon nanowire. When the film of the graphene loaded silicon nanowire is used for a lithium ion battery cathode, the film has high silicon content and good electrochemical cycling stability. The method prepares the cut waste silicon powder into the silicon nanowire by a rapid thermal shock method and is used for the lithium ion battery cathode material, the method is simple and green, the preparation process is rapid, and the high-value recycling of the cut waste silicon powder is easy to realize.
Description
Technical Field
The invention belongs to the technical field of secondary resource utilization, and discloses a method for rapidly preparing silicon nanowires by using cut waste silicon powder and application thereof.
Background
The photovoltaic industry can generate fine-granularity and high-purity cut waste silicon powder which is about 40% of the total mass of a silicon ingot in the cutting process of crystalline silicon wafers. The annual production of waste silicon powder in China has exceeded 10 ten thousand tons so far, and the waste silicon powder also increases sharply along with the increase of the installed quantity of crystalline silicon solar cells. Simple stacking, degradation treatment, or re-entry to the photovoltaic industry through complex purification procedures is its current state of treatment. The feature of fine particle size and high purity of the cut silicon waste powder is considered to be a low cost, reliable source of silicon for the production of nanostructured silicon.
In recent years, lithium ion power batteries in the new energy field are vigorously developed, and the requirement for high-energy-density anode materials is urgent. Silicon has the advantages of high theoretical specific capacity (3579 mAh/g), proper lithium intercalation/deintercalation voltage platform and the like as a negative electrode material, and is considered to be one of the highest potential high specific energy negative electrode materials of the next generation. However, silicon materials have large volume changes and poor electrical conductivity during charge and discharge processes, which limit commercial applications. Because of the special properties, the silicon nanowire has great potential application value in the aspects of nano electronic devices, optoelectronic devices, new energy sources and the like. In the field of new energy lithium ion power batteries, compared with a bulk material, the application of the silicon nanowire to a lithium battery anode material has the outstanding advantage that: the method has high tolerance to the electrode volume change in the circulation process, and can avoid the damage of the electrode structure to a greater extent; the specific surface area is large, which is beneficial to the effective contact between the electrolyte and the electrode and reduces the charge and discharge time; the electron transport and ion diffusion distance can be shortened, and the capacity and multiplying power of the battery are improved.
The preparation method of the silicon nanowire mainly comprises the following steps of firstly, a laser ablation method, wherein a metal catalyst or a mixture of silicon monoxide or silicon and silicon dioxide is used as a target material, and the prepared silicon nanowire contains catalyst metal, has long process time consumption and high equipment requirement and high energy consumption [ A.M.Morales, C.M.Lieber, A laser ablation method for the synthesis of crystalline semiconductor nanowires.science,1998,279:208-211]; secondly, chemical Vapor Deposition (CVD), CN 104103821 adopts a chemical vapor deposition method to prepare the silicon nanowire, and the method needs to use a catalyst and silane as silicon sources, and the preparation process is accompanied by toxic gas, and has complex process and long time consumption; thirdly, a fused salt electrolysis method, CN 102154659A discloses a method for preparing silicon nanowires by refining industrial silicon through fused salt electrolysis, a large amount of flux salt is needed during the preparation of the method, and the prepared nanowires mostly contain impurity metals, so that the electrolysis preparation process is long, difficult to control and high in energy consumption.
The invention develops a novel method, which uses micron-sized cutting waste silicon powder as a silicon source, and prepares the high-purity nanowire with adjustable diameter rapidly in a time of less than 1 second through electro-thermal shock. Compared with other preparation methods, the method does not need to use metal catalyst, expensive and toxic silicon raw materials, and the preparation process is simple, rapid (< 1 second) and low in energy consumption. In addition, the composite of the silicon nanowire and the carbon substrate can be realized in one step, and the graphene film loaded with the silicon nanowire can be obtained and can be directly used as a self-supporting electrode for the negative electrode of the lithium ion battery.
Disclosure of Invention
The invention provides a method for rapidly preparing silicon nanowires by using the waste cutting silicon powder, which is used for a lithium ion battery cathode material, shows excellent electrochemical performance and provides a new thought for the high-value utilization of the waste cutting silicon powder. The method comprises the following steps:
(1) Dispersing the dried cut waste silicon powder and graphene in a solvent according to a certain mass ratio to form suspensions A and B; uniformly mixing the suspension A and the suspension B to prepare a suspension C;
(2) Carrying out suction filtration on the suspension C to obtain filter membranes with different sizes and thicknesses, and drying to obtain a graphene film loaded with the cut waste silicon powder;
(3) Placing the film obtained in the step (2) in a reducing atmosphere high-temperature furnace, pre-reducing to remove part of functional groups in the graphene, cooling the graphene with the furnace to room temperature, and taking out a sample for later use;
(4) The film loaded with the cutting waste silicon powder after the pre-reduction in the step (3) is rapidly prepared into a silicon nanowire through an electro-thermal shock process;
further, the cutting waste silicon powder used in the step (1) is obtained by drying waste silicon mud generated in the process of cutting crystalline silicon in the photovoltaic industry, and is flaky micron-sized powder with the purity of more than 98.5%;
further, the graphene powder in the step (1) is single-layer and multi-layer graphene oxide prepared by a physical method or a chemical method;
further, the mass ratio of the cutting waste silicon powder to the graphene is 1: 5-5: 1, a step of;
further, the solvent is one or more of the following combinations of deionized water, ethanol, glycol, methanol, glycerol, isopropanol, N-butanol, N-N dimethylformamide and N-methylpyrrolidone;
further, the size and thickness of the filter membrane are controlled by the size of a container used for suction filtration and the addition amount of materials;
further, in the pre-reduction step, heating to 100-600 ℃ in a reducing atmosphere, wherein the heating rate is 1-5 ℃/min, and the heat preservation time is 1-3 hours, so as to remove part of functional groups in the graphene through pre-reduction;
further, the silicon nanowire is rapidly prepared by using electro-thermal shock, the temperature is 1500-2500 ℃, and the thermal shock process time is 100 milliseconds-1 second.
The beneficial effects of the invention are as follows: the waste silicon material generated in the process of cutting the crystalline silicon in the photovoltaic industry is used as a silicon source, and the high-added-value silicon nanowire which can be used for the negative electrode of the lithium ion battery is prepared by using the technology with short range, green, low energy consumption and high efficiency, so that the recycling utilization of solid wastes is realized; the invention uses the waste silicon powder as the silicon source to replace the traditional silicon source which is processed for the second time and is high in cost and toxic, and the silicon nanowire preparation process does not need to use a metal catalyst, so that the product purity is high; compared with the traditional silicon nanowire preparation technology, the silicon nanowire preparation technology by thermal shock has the advantages of simple preparation process, high efficiency and low energy consumption. In addition, the technology can realize the combination of the silicon nanowire and the graphene in one step, is directly used for the negative electrode of the lithium ion battery, avoids the use of a current collector, a conductive additive and an adhesive, and can obviously improve the quality energy density of the battery.
Drawings
Fig. 1 is an SEM image of cut waste silicon powder according to embodiment 1 of the present invention.
FIG. 2 is a graph showing the particle size distribution of the cut waste silicon powder according to embodiment 1 of the present invention.
Fig. 3 is a TEM photograph of a silicon nanowire prepared by thermal shock according to embodiment 1 of the present invention.
Fig. 4 is an SEM picture of a silicon nanowire-graphene (mass ratio 1:1) composite film according to embodiment 1 of the present invention.
Fig. 5 is a graph of charge-discharge cycle performance and coulombic efficiency of a silicon nanowire-graphene composite film according to embodiment 1 of the present invention.
FIG. 6 is an SEM image of silicon nanowires prepared at a mass ratio of waste silicon powder to graphene of (2:1) according to example 2 of the present invention.
FIG. 7 is an SEM image of silicon nanowires prepared at a mass ratio of waste silicon powder to graphene of 1:2 according to example 3 of the present invention.
FIG. 8 is an SEM image of silicon nanowires prepared at a mass ratio of waste silicon powder to graphene of 1:4 according to example 4 of the present invention.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples, but the present invention is not limited to the following examples.
The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials, unless otherwise specified, are commercially available.
Example 1
(1) Dispersing the dried micron-sized cutting waste silicon powder and graphene powder into 50ml of water solution according to a mass ratio of 1:1; (2) Mixing the suspension containing the waste silicon powder and graphene; (3) Vacuum filtering the mixed suspension after ultrasonic dispersion to prepare a filter membrane, wherein the vacuum degree is-0.1 MPa, and the diameter is 50mm; (4) Drying the suction-filtered graphene filter membrane loaded with the waste silicon powder to form a film; (5) Pre-reducing the dried filter membrane, removing partial functional groups in graphene, and removing the functional groups in hydrogen (H 2 10 percent of argon (Ar, 90 percent) mixed gas, wherein the temperature is 300 ℃, the heating rate is 3 ℃/min, the temperature is kept constant for 1 hour, and then the mixture is naturally cooled to room temperature for pre-reduction treatment; (6) And (3) rapidly preparing the silicon nanowires by electro-thermal shock of the pre-reduced filter membrane, wherein the temperature of the thermal shock process is 2500 ℃ and the time is 800 milliseconds.
Scanning electron microscopy (JSM-7800), transmission electron microscopy (JEM-2100F), laser particle size analyzer (Mastersizer 2000) were used to test the cut waste silicon powder, the prepared silicon nanowires, and the graphene composite film supporting the silicon nanowires under the above conditions. The test results are shown in figures 1-4 respectively; the diameter of the silicon nanowires is about 50nm.
The silicon nanowire-graphene composite film prepared in the example 1 is directly used for a lithium ion battery anode material, a metal lithium sheet is used as a counter electrode, celgard2325 is used as a diaphragm, and 1mol/L LiPF is used 6 (the solvent is a mixed solution of ethylene carbonate and dimethyl carbonate in a volume ratio of 1:1) as an electrolyte, and the CR2032 type button battery shell is assembled into a button battery in a glove box protected by argon gas for assembly. The charge and discharge test is carried out, the test program is 200mA/g, the voltage charge and discharge interval is 0.01-3V, and the charge and discharge cycle performance is shown in figure 5.
Example 2
(1) Dispersing the dried micron-sized cutting waste silicon powder and graphene powder into 50ml of water solution according to a mass ratio of 2:1; (2) Mixing the suspension containing the waste silicon powder and graphene; (3) Vacuum filtering the mixed suspension after ultrasonic dispersion to prepare a filter membrane, wherein the vacuum degree is-0.1 MPa, and the diameter is 50mm; (4) Drying the suction-filtered graphene filter membrane loaded with the waste silicon powder to form a film; (5) Pre-reducing the dried filter membrane, removing partial functional groups in graphene, and removing the functional groups in hydrogen (H 2 10 percent of argon (Ar, 90 percent) mixed gas, wherein the temperature is 100 ℃, the heating rate is 1 ℃/min, the temperature is kept constant for 3 hours, and then the mixture is naturally cooled to room temperature for pre-reduction treatment; (6) And (3) rapidly preparing the silicon nanowires by electro-thermal shock of the pre-reduced filter membrane, wherein the temperature of the thermal shock process is 2000 ℃ and the time is 500 milliseconds.
The silicon nanowires and graphene films carrying the nanowires prepared above were tested by a scanning electron microscope (JSM-7800) and a transmission electron microscope (JEM-2100F), and the diameters of the silicon nanowires were about 100nm, as shown in fig. 6.
Example 3
(1) Dispersing the dried micron-sized cutting waste silicon powder and graphene powder into 50ml of water solution according to a mass ratio of 1:2; (2) Mixing the suspension containing the waste silicon powder and graphene; (3) Vacuum filtering the mixed suspension after ultrasonic dispersion to prepare a filter membrane, wherein the vacuum degree is-0.1 MPa, and the diameter is 50mm; (4) Drying the suction-filtered graphene filter membrane loaded with the waste silicon powder to form a film; (5) Pre-reducing the dried filter membrane, removing partial functional groups in graphene, and removing the functional groups in hydrogen (H 2 10%) argon (Ar, 90%) mixIn the gas, the temperature is 600 ℃, the heating rate is 5 ℃/min, the temperature is kept constant for 1h, and then the gas is naturally cooled to room temperature for pre-reduction treatment; (6) And (3) rapidly preparing the silicon nanowires by electro-thermal shock of the pre-reduced filter membrane, wherein the temperature of the thermal shock process is 1500 ℃ below zero and the time is 100 milliseconds.
The silicon nanowires and graphene films carrying the nanowires prepared above were tested by a scanning electron microscope (JSM-7800) and a transmission electron microscope (JEM-2100F), and the diameter of the silicon nanowires was about 40nm, as shown in fig. 7.
Example 4
(1) Dispersing dried micron-sized cutting waste silicon powder and graphene powder into 50ml of water solution according to a mass ratio of 1:4; (2) Mixing the suspension containing the waste silicon powder and graphene; (3) Vacuum-filtering the mixed suspension after ultrasonic dispersion to prepare a filter membrane, wherein the vacuum degree is-0.1 MPa, and the diameter is 50mm; (4) Drying the suction-filtered graphene filter membrane loaded with the waste silicon powder to form a film; (5) Pre-reducing the dried filter membrane, removing partial functional groups in graphene, and removing the functional groups in hydrogen (H 2 5 percent of argon (Ar, 95 percent) mixed gas, wherein the temperature is 300 ℃, the heating rate is 3 ℃/min, and the temperature is kept constant for 1 hour and then naturally cooled to room temperature for pre-reduction treatment; (6) And (3) rapidly preparing the silicon nanowires by electro-thermal shock of the pre-reduced filter membrane, wherein the temperature of the thermal shock process is 2000 ℃ and the time is 500 milliseconds.
The silicon nanowires and graphene films carrying the nanowires prepared above were tested by a scanning electron microscope (JSM-7800) and a transmission electron microscope (JEM-2100F), and the diameters of the silicon nanowires were about 20nm, as shown in fig. 8.
In the description of the present specification, the descriptions of the terms "one implementation," "some implementations," "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is a further detailed description of the invention in connection with specific embodiments, and it is not intended that the invention be limited to such description. It will be apparent to those skilled in the art that several simple deductions or substitutions can be made without departing from the spirit of the invention.
Claims (7)
1. The method for rapidly preparing the silicon nanowire by using the cut waste silicon powder is characterized by comprising the following steps of:
(1) Dispersing the dried cut waste silicon powder and graphene in a solvent according to a certain mass ratio to form suspensions A and B; uniformly mixing the suspension A and the suspension B to prepare a suspension C;
(2) Carrying out suction filtration on the suspension C to obtain filter membranes with different sizes and thicknesses, and drying to obtain a graphene film loaded with the cut waste silicon powder;
(3) Placing the film obtained in the step (2) in a reducing atmosphere high-temperature furnace, pre-reducing to remove part of functional groups in the graphene, cooling the graphene with the furnace to room temperature, and taking out a sample for later use;
(4) And (3) rapidly preparing the graphene film carrying the silicon nanowires through the film after pre-reduction in the step (3) through an electro-thermal shock process, and rapidly preparing the silicon nanowires through the electro-thermal shock at the temperature of 1500-2500 ℃ for 100 milliseconds-1 second.
2. A method for rapidly preparing silicon nanowires from cut waste silicon powder as claimed in claim 1, wherein: the waste silicon powder used in the step (1) is obtained by drying waste silicon mud generated in the process of cutting crystalline silicon in the photovoltaic industry, and the waste silicon powder is flaky micron-sized powder with the purity of more than 98.5%.
3. A method for rapidly preparing silicon nanowires from cut waste silicon powder as claimed in claim 1, wherein: the graphene powder in the step (1) is single-layer and multi-layer graphene oxide prepared by a physical method or a chemical method.
4. A method for rapidly preparing silicon nanowires from cut waste silicon powder as claimed in claim 1, wherein: the mass ratio of the cutting waste silicon powder to the graphene is 1: 5-5: 1.
5. a method for rapidly preparing silicon nanowires from cut waste silicon powder as claimed in claim 1, wherein: the solvent in the step (1) is one or more of deionized water, ethanol, glycol, methanol, glycerol, isopropanol, N-butanol, N-N dimethylformamide and N-methylpyrrolidone.
6. A method for rapidly preparing silicon nanowires from cut waste silicon powder as claimed in claim 1, wherein: the size and thickness of the filter membrane in the step (2) are controlled by the size of a container used for suction filtration and the addition amount of materials.
7. A method for rapidly preparing silicon nanowires from cut waste silicon powder as claimed in claim 1, wherein: in the step (3), the pre-reduction is carried out in a reducing atmosphere, the temperature is heated to 100-600 ℃, the heating rate is 1-5 ℃/min, and the heat preservation time is 1-3 h, so that partial functional groups in the graphene are removed through the pre-reduction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110244799.9A CN115010137B (en) | 2021-03-05 | 2021-03-05 | Method for rapidly preparing silicon nanowires by using cut waste silicon powder and application |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110244799.9A CN115010137B (en) | 2021-03-05 | 2021-03-05 | Method for rapidly preparing silicon nanowires by using cut waste silicon powder and application |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115010137A CN115010137A (en) | 2022-09-06 |
CN115010137B true CN115010137B (en) | 2023-12-19 |
Family
ID=83064887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110244799.9A Active CN115010137B (en) | 2021-03-05 | 2021-03-05 | Method for rapidly preparing silicon nanowires by using cut waste silicon powder and application |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115010137B (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103872296A (en) * | 2012-12-10 | 2014-06-18 | 中国人民解放军63971部队 | Method for preparing lithium ion battery porous silicon composite cathode material by industrial silicon waste material |
CN105612277A (en) * | 2013-10-07 | 2016-05-25 | Spi公司 | A method for mass production of silicon nanowires and/or nanobelts, and lithium batteries and anodes using the silicon nanowires and/or nanobelts |
WO2019161288A1 (en) * | 2018-02-15 | 2019-08-22 | The Research Foundation For The State University Of New York | Silicon-carbon nanomaterials, method of making same, and uses of same |
-
2021
- 2021-03-05 CN CN202110244799.9A patent/CN115010137B/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103872296A (en) * | 2012-12-10 | 2014-06-18 | 中国人民解放军63971部队 | Method for preparing lithium ion battery porous silicon composite cathode material by industrial silicon waste material |
CN105612277A (en) * | 2013-10-07 | 2016-05-25 | Spi公司 | A method for mass production of silicon nanowires and/or nanobelts, and lithium batteries and anodes using the silicon nanowires and/or nanobelts |
WO2019161288A1 (en) * | 2018-02-15 | 2019-08-22 | The Research Foundation For The State University Of New York | Silicon-carbon nanomaterials, method of making same, and uses of same |
Also Published As
Publication number | Publication date |
---|---|
CN115010137A (en) | 2022-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110299516B (en) | Preparation method of carbon nanotube array loaded lithium titanate flexible electrode material | |
KR100666822B1 (en) | Anode active material with improved electrochemical properties and electrochemical device comprising the same | |
AU2008279196B2 (en) | Porous network negative electrodes for non-aqueous electrolyte secondary battery | |
CN113346054B (en) | Preparation method and application of MXene-carbon nanocage-sulfur composite material | |
CN112467122B (en) | Lithium orthosilicate composite material and preparation method and application thereof | |
Ncube et al. | The electrochemical effect of Al-doping on Li4Ti5O12 as anode material for lithium-ion batteries | |
CN112875680B (en) | Preparation method of flaky Fe-based alloy catalytic growth carbon nanotube array | |
CN109850886B (en) | Porous graphite material and preparation method and application thereof | |
KR102383273B1 (en) | Porous silicon composite comprising a carbon coating layer, preparation of the same and lithium secondary battery using the same | |
CN112209362B (en) | Method for activating carbon fluoride by plasma induction and preparation of lithium primary battery | |
CN111668474A (en) | Negative electrode material, preparation method thereof and secondary battery | |
CN112820847A (en) | Silicon-based negative electrode material and preparation method thereof, lithium ion battery and electric appliance | |
KR101993371B1 (en) | Sulface modified Reduced Graphene Oxide-Sulfur Composite by Polydopamine for Lithium-Sulfur Battery and its Manufacturing Method | |
CN111370656B (en) | Silicon-carbon composite material and preparation method and application thereof | |
KR102176590B1 (en) | Method of preparing anode active material for rechargeable lithium battery and rechargeable lithium battery | |
KR20130118191A (en) | Silicon based negative active material and secondary battery comprising the same | |
CN116706422A (en) | Preparation method and application of TiN surface modified glass fiber diaphragm | |
CN115010137B (en) | Method for rapidly preparing silicon nanowires by using cut waste silicon powder and application | |
EP2763215B1 (en) | Composite for anode active material and method for manufacturing same | |
CN116154122A (en) | Porous silicon-based anode material, solid electrode and preparation method | |
US20220278312A1 (en) | Vanadium selenide/carbon cellulose composite as well as preparation method and application thereof | |
CN116724419A (en) | Silicon-carbon negative electrode material, negative electrode plate, secondary battery, battery module, battery pack and electricity utilization device | |
Chen et al. | Xanthan Gum as a Carbon Source for Preparation of Carbon-Silicon/Graphite Composite as Anode Materials for Lithium Ion Batteries | |
CN115775885B (en) | Silicon-oxygen anode material and preparation method and application thereof | |
CN113991116B (en) | Lithium ion battery negative electrode composite material and preparation method and application thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |