CN115000245A - Preparation method and system of TOPCon solar cell in-situ doped passivation layer - Google Patents
Preparation method and system of TOPCon solar cell in-situ doped passivation layer Download PDFInfo
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- CN115000245A CN115000245A CN202210690436.2A CN202210690436A CN115000245A CN 115000245 A CN115000245 A CN 115000245A CN 202210690436 A CN202210690436 A CN 202210690436A CN 115000245 A CN115000245 A CN 115000245A
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- 238000011065 in-situ storage Methods 0.000 title claims abstract description 21
- 238000002161 passivation Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 235000012431 wafers Nutrition 0.000 claims abstract description 38
- 230000005540 biological transmission Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 62
- 238000006243 chemical reaction Methods 0.000 claims description 56
- 210000000078 claw Anatomy 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 230000007306 turnover Effects 0.000 claims description 6
- 230000006978 adaptation Effects 0.000 claims description 4
- 239000010985 leather Substances 0.000 claims description 4
- 238000013016 damping Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 244000309464 bull Species 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention provides a preparation method and a system of an in-situ doped passivation layer of a TOPCon solar cell, and relates to the field of solar cell preparation. The TOPCon solar cell in-situ doped passivation layer manufacturing method and system comprises a working box, wherein a transmission mechanism is arranged in the working box and comprises an adjusting motor arranged at the bottom of the working box, a first rotating rod is arranged at the output end of the adjusting motor, one side, far away from the adjusting motor, of the first rotating rod is rotatably connected with the side wall of the working box, a seventh rotating rod is arranged above the first rotating rod and between the two side walls of the working box and is vertical to a conveyor belt, a second circular gear is sleeved on the seventh rotating rod in the vertical direction of the first circular gear, and the first circular gear is meshed with the second circular gear, so that the problems that the operation of loading and unloading of silicon wafers is very complicated, and the silicon wafers cannot be uniformly loaded are solved.
Description
Technical Field
The invention relates to the technical field of solar cell preparation, in particular to a preparation method and a system of a TOPCon solar cell in-situ doped passivation layer.
Background
In recent years, with the research and development of crystalline silicon solar cells, theories and practices prove that surface passivation is a necessary way for improving cell efficiency, and aluminum oxide thin layer passivation is widely popularized on PERC cells. However, the doped polysilicon and the silicon oxide have better passivation effect, and are a prospect for the development of the next generation of mass production technology, because the silicon oxide plays a role in chemical passivation on the surface of crystalline silicon, and the doped polysilicon has good field passivation effect. But since silicon oxide is insulating it prevents internal carriers from being introduced into the doped polysilicon charge-collection layer. Research shows that when the silicon oxide layer is thinned to below 2nm, the charge can smoothly pass through the oxide layer, which is called tunnel effect for short, and the silicon oxide layer serving as a passivation layer can play a passivation effect when the thickness of the silicon oxide layer is 1-2 nm. A typical new cell designed using this stack is a TOPCon cell, which has an oxide layer of about 1.6nm formed on the back of an N-type silicon substrate, plus a phosphorus doped polysilicon layer of about 150nm, and the theoretical cell conversion efficiency of this cell can reach about 29%.
The existing preparation method and system for the TOPCon solar cell in-situ doped passivation layer are required to coat a film on a silicon wafer in a reaction box, but the operation of loading and unloading the silicon wafer is very complicated, and the silicon wafer cannot be uniformly loaded.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a preparation method and a system of a TOPCon solar cell in-situ doped passivation layer, which solve the problems that the operation of loading and unloading silicon wafers is very complicated and the silicon wafers cannot be uniformly loaded.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme:
on one hand, the preparation method and the system of the TOPCon solar cell in-situ doped passivation layer are provided, the system comprises a working box, and one side of the top of the working box is provided with a through hole;
the conveying mechanism is arranged at the top of the working box and comprises four supporting plates arranged at the top of the working box, a roller is arranged between each two supporting plates, sixth rotating rods fixedly connected are arranged on two sides of each roller, each sixth rotating rod is rotatably connected with the corresponding supporting plate, and a conveying belt matched with the corresponding rollers is sleeved between the two rollers;
the automatic transmission device is characterized in that a transmission mechanism is arranged in the working box and comprises an adjusting motor arranged at the bottom of the working box, a first rotating rod is arranged at the output end of the adjusting motor, one side, far away from the adjusting motor, of the first rotating rod is rotatably connected with the side wall of the working box, a seventh rotating rod is arranged above the first rotating rod and is arranged between the two side walls of the working box, the seventh rotating rod is perpendicular to the conveying belt, a first circular gear is sleeved on the first rotating rod, a second circular gear is sleeved on the seventh rotating rod in the direction perpendicular to the first circular gear, the first circular gear is meshed with the second circular gear, a first intermittent gear is sleeved on the seventh rotating rod, one of the first intermittent gear and the second intermittent gear is arranged at the end of the sixth rotating rod, a leather sleeve is sleeved at the end of the third rotating rod, one end, far away from the third rotating rod, penetrates through the through hole and extends into the working box, a second rotating rod is sleeved at one end, far away from the third rotating rod, of the belt, a third circular gear is arranged at the end, far away from the belt, of the second rotating rod, the third circular gear is meshed with the first intermittent gear, a first connecting rod is rotatably connected to one side, far away from the second rotating rod, of the third circular gear, and the first connecting rod is fixed to the side wall of the working box;
a second intermittent gear is sleeved on the first rotating rod, one side of the second intermittent gear is connected with a first bevel gear in a meshing manner, a fourth rotating rod is arranged in the middle of the first bevel gear, a second bevel gear is arranged on one side, far away from the second intermittent gear, of the fourth rotating rod, connecting plates are arranged at two ends of the fourth rotating rod, the fourth rotating rod is rotatably connected with the connecting plates, a fourth circular gear is connected to the second bevel gear in a meshing manner, a second connecting rod in a rotating connection manner is arranged at the top of the fourth circular gear, a fifth circular gear is connected to one side of the first circular gear in a meshing manner, and a fifth rotating rod is arranged at the top of the fifth circular gear;
one side of work box is equipped with the reaction box, the second connecting rod is fixed the reaction box bottom is located the conveyer belt below be equipped with the feed plate on the reaction box side, the feed chute has been seted up on the feed plate, the reaction box sets up fifth bull stick top, be equipped with receiving mechanism in the reaction box, receiving mechanism is including setting up the connecting axle of reaction box bottom, the connecting axle with the reaction box rotates to be connected, just connecting axle bottom with fifth bull stick fixed connection, the connecting axle top is equipped with an electric telescopic handle, an electric telescopic handle's output is equipped with the bracing piece, the bracing piece is kept away from an electric telescopic handle's tip is equipped with and connects the flitch.
Preferably, the top cover is arranged at the top of the reaction box, the top cover comprises a fixed cover which is fixed and kept away from one side of the feeding plate, the end part of the fixed cover is hinged with a turnover cover, a second electric telescopic rod is arranged at the bottom of the fixed cover, a clamping arm is arranged at the output end of the second electric telescopic rod, a clamping jaw is arranged at the end part of the clamping arm, and a leakage hole is formed in the clamping jaw.
Preferably, be located the gripper jaw with connect between the flitch the discharge gate has been seted up on the reaction box lateral wall, be equipped with the board that gathers materials of looks adaptation in the discharge gate, gather the flitch with reaction box inner wall sliding connection, just the board that gathers materials is close to the tip of discharge gate be equipped with the baffle of discharge gate looks adaptation, be equipped with the handle on the baffle.
Preferably, the conveyor belt is provided with a placing groove.
Preferably, the material receiving plate is provided with a clamping groove.
Preferably, the adjusting motor bottom is equipped with the supporting pad, be equipped with damping spring in the supporting pad.
Preferably, the supporting rod is an electric telescopic rod capable of automatically stretching and adjusting.
Preferably, a clamping groove is formed in the side edge of the reaction box below the feeding plate, and a clamping block matched with the clamping groove is arranged at one end, close to the clamping groove, of the turnover cover.
In another aspect, a method for preparing an in-situ doped passivation layer of a TOPCon solar cell is provided, which includes:
flatly laying the silicon wafer in a placing groove of a conveyor belt;
the material collecting plate is drawn out of the reaction box through the handle, the first electric telescopic rod is opened, the material receiving plate on the supporting rod is jacked at the material inlet through the first electric telescopic rod, and the first electric telescopic rod is closed;
lifting a turnover cover above a reaction box, opening an adjusting motor, driving a first rotating rod to rotate through the adjusting motor, driving a first circular gear to rotate by the first rotating rod, driving a second circular gear to rotate by the first circular gear, driving a seventh rotating rod to rotate by the second circular gear, driving a first intermittent gear to rotate by the seventh rotating rod, driving a third circular gear to rotate by the first intermittent gear, driving a second rotating rod to rotate by the third circular gear, driving a third rotating rod to rotate by the second rotating rod through a belt, driving a sixth rotating rod to rotate by the third rotating rod, driving a roller to rotate by the sixth rotating rod, and realizing intermittent feeding of silicon wafers on a conveying belt by the roller through driving the conveying belt to rotate;
meanwhile, a first rotating rod at the output end of the adjusting motor drives a second intermittent gear to rotate, the second intermittent gear drives a first bevel gear to rotate intermittently, the first bevel gear drives a fourth rotating rod to rotate, the fourth rotating rod drives a second bevel gear to rotate, the second bevel gear drives a fourth round gear to rotate, the fourth round gear drives a fifth round gear to rotate, the fifth round gear drives a fifth rotating rod to rotate, the fifth rotating rod drives a connecting shaft to rotate, the connecting shaft drives a first electric telescopic rod to rotate, a supporting rod on the first electric telescopic rod rotates, a material receiving plate on the supporting rod rotates, and through the rotation of the material receiving plate and the rotation matching of the conveying belt, the uniform feeding of the silicon wafers is realized;
after the feeding is finished, the adjusting motor is closed, the second electric telescopic rod is opened, the clamping claw on the clamping arm extends to the silicon wafer on the material receiving plate through the second electric telescopic rod, the silicon wafer is clamped by matching with the clamping claw, the second electric telescopic rod is closed, the first electric telescopic rod is opened, the material receiving plate is retracted to the bottom of the reaction box, the material collecting plate is inserted into the reaction box through the handle, the silicon wafer is isolated on the upper layer in the reaction box through the material collecting plate, and the flip cover is closed;
preparing a silicon oxide thin layer and a doping layer on the silicon wafer on the upper layer of the reaction box to complete the preparation of the in-situ doping layer of the solar cell;
after the in-situ doping layer of the solar cell is prepared, the silicon wafer is placed on the material collecting plate by loosening the clamping claws, and the material is discharged by matching the handle with the material collecting plate.
(III) advantageous effects
The preparation method and system of the TOPCon solar cell in-situ doped passivation layer effectively solve the problems that the loading and unloading operation of silicon wafers is very complicated, and the silicon wafers cannot be uniformly loaded.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the transmission mechanism of the present invention;
FIG. 3 is a structural view of a feeding mechanism of the present invention;
FIG. 4 is a view showing the construction of a reaction tank according to the present invention;
FIG. 5 is a structural diagram of a receiving mechanism of the invention;
FIG. 6 is a schematic view of the top cover and the material clamping mechanism of the present invention
Fig. 7 is a structural view of a material collecting plate of the invention.
101, a material collecting plate; 102. a baffle plate; 103. a handle; 2. a work box; 201. perforating; 3. a transmission mechanism; 301. a third rotating rod; 302. a second rotating rod; 303. a seventh rotating rod; 304. a first rotating lever; 305. a fourth rotating rod; 306. adjusting the motor; 307. a support pad; 308. a first circular gear; 309. a second circular gear; 310. a first intermittent gear; 311. a third circular gear; 312. a first connecting rod; 313. a second intermittent gear; 314. a first bevel gear; 315. a second bevel gear; 316. a fourth circular gear; 317. a fifth circular gear; 318. a second connecting rod; 319. a fifth rotating rod; 320. a connecting plate; 321. a belt; 4. a reaction box; 401. a discharge port; 402. a feeding plate; 403. a feed chute; 5. a top cover; 501. a fixed cover; 502. a cover is turned; 503. a clamping block; 6. a material conveying mechanism; 601. a support plate; 602. a sixth rotating rod; 603. a drum; 604. a conveyor belt; 605. a placement groove; 7. a material receiving mechanism; 701. a connecting shaft; 702. a first electric telescopic rod; 703. a support bar; 704. a material receiving plate; 705. a clamping groove; 8. a second electric telescopic rod; 901. a clamp arm; 902. a gripper jaw; 903. and (4) a leak hole.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
As shown in fig. 1-7, the embodiment provides a system for preparing an in-situ doped passivation layer of a TOPCon solar cell, which includes a work box 2, wherein a through hole 201 is formed on one side of the top of the work box 2;
the top of the work box 2 is provided with a material conveying mechanism 6, the material conveying mechanism 6 comprises four support plates 601 arranged at the top of the work box 2, rollers are arranged between each two support plates 601, sixth rotating rods 602 fixedly connected are arranged on two sides of each roller, each sixth rotating rod 602 is rotatably connected with the support plate 601, and a conveying belt 604 matched with each other is sleeved between the two rollers; the rotation of the sixth rotating rod 602 drives the rotation of the roller, and the rotation of the roller drives the rotation of the conveyor belt 604, so as to convey the silicon wafer;
the transmission mechanism 3 is arranged in the working box 2, the transmission mechanism 3 comprises an adjusting motor 306 arranged at the bottom of the working box 2, the output end of the adjusting motor 306 is provided with a first rotating rod 304, one side of the first rotating rod 304, which is far away from the adjusting motor 306, is rotatably connected with the side wall of the working box 2, a seventh rotating rod 303 is arranged between the two side walls of the working box 2 and is positioned above the first rotating rod 304, the seventh rotating rod 303 is vertical to a conveyor belt 604, the first rotating rod 304 is sleeved with a first circular gear 308, the seventh rotating rod 303, which is positioned in the vertical direction of the first circular gear 308, is sleeved with a second circular gear 309, the first circular gear 308 is meshed with the second circular gear 309, the seventh rotating rod 303 is sleeved with a first intermittent gear 310, the end part of one sixth rotating rod 602 is provided with a third rotating rod 301, the end part of the third rotating rod 301 is sleeved with a leather sheath, one end, which is far away from the third rotating rod 301, penetrates through a through hole 201 and extends into the working box 2, a second rotating rod 302 is sleeved at one end, far away from the third rotating rod 301, of the belt 321, a third circular gear 311 is arranged at the end, far away from the belt 321, of the second rotating rod 302, the third circular gear 311 is meshed with the first intermittent gear 310, a first connecting rod 312 is rotatably connected to one side, far away from the second rotating rod 302, of the third circular gear 311, and the first connecting rod 312 is fixed to the side wall of the working box 2; the rotation of the adjustment motor 306 drives; the first rotating rod 304 is driven to rotate by the adjusting motor 306, the first rotating rod 304 drives the first circular gear 308 to rotate, the first circular gear 308 drives the second circular gear 309 to rotate, the second circular gear 309 drives the seventh rotating rod 303 to rotate, the seventh rotating rod 303 drives the first intermittent gear 310 to rotate, the first intermittent gear 310 intermittently drives the third circular gear 311 to rotate, the third circular gear 311 intermittently drives the second rotating rod 302 to rotate, the second rotating rod 302 drives the third rotating rod 301 to rotate through the belt 321, the third rotating rod 301 drives the sixth rotating rod 602 to rotate, the sixth rotating rod 602 drives the roller 603 to rotate, and the roller 603 drives the conveyor belt 604 to rotate so as to realize intermittent feeding of the silicon wafers on the conveyor belt 604; meanwhile, the first rotating rod 304 at the output end of the adjusting motor 306 drives the second intermittent gear 313 to rotate, the second intermittent gear 313 intermittently drives the first bevel gear 314 to rotate, the first bevel gear 314 drives the fourth rotating rod 305 to rotate, the fourth rotating rod 305 drives the second bevel gear 315 to rotate, the second bevel gear 315 drives the fourth circular gear 316 to rotate, the fourth circular gear 316 drives the fifth circular gear 317 to rotate, the fifth circular gear 317 drives the fifth rotating rod 319 to rotate, the fifth rotating rod 319 drives the connecting shaft 701 to rotate, the connecting shaft 701 drives the first electric telescopic rod 702 to rotate, the supporting rod 703 on the first electric telescopic rod 702 rotates, the material receiving plate 704 on the supporting rod 703 rotates, and through the rotation of the material receiving plate 704 and the rotation of the conveying belt 604, uniform loading of silicon wafers is realized.
A second intermittent gear 313 is sleeved on the first rotating rod 304, one side of the second intermittent gear 313 is in meshing connection with a first bevel gear 314, a fourth rotating rod 305 is arranged in the middle of the first bevel gear 314, a second bevel gear 315 is arranged on one side, away from the second intermittent gear 313, of the fourth rotating rod 305, connecting plates 320 are arranged at two ends of the fourth rotating rod 305, the fourth rotating rod 305 is in rotating connection with the connecting plates 320, a fourth circular gear 316 is in meshing connection with the second bevel gear 315, a second connecting rod 318 in rotating connection is arranged at the top of the fourth circular gear 316, a fifth circular gear 317 is in meshing connection with one side of the first circular gear 308, and a fifth rotating rod 319 is arranged at the top of the fifth circular gear 317;
one side of work box 2 is equipped with reaction box 4, second connecting rod 318 is fixed in reaction box 4 bottom, be located and be equipped with feed plate 402 on the 4 sides of reaction box below conveyer belt 604, feed chute 403 has been seted up on feed plate 402, reaction box 4 sets up at fifth bull stick 319 top, be equipped with receiving mechanism 7 in the reaction box 4, receive the material structure including setting up the connecting axle 701 in reaction box 4 bottom, connecting axle 701 rotates with reaction box 4 to be connected, and connecting axle 701 bottom and fifth bull stick 319 fixed connection, connecting axle 701 top is equipped with first electric telescopic handle 702, the output of first electric telescopic handle 702 is equipped with bracing piece 703, the tip that first electric telescopic handle 702 was kept away from to bracing piece 703 is equipped with and connects flitch 704.
Certainly optionally, top cap 5 is equipped with at the top of reaction box 4, and top cap 5 is including fixing fixed lid 501 of keeping away from feed plate 402 one side, and fixed lid 501 tip articulates there is flip 502, and the bottom of fixed lid 501 is equipped with second electric telescopic handle 8, and the output of second electric telescopic handle 8 is equipped with centre gripping arm 901, and the tip of centre gripping arm 901 is equipped with gripper 902, is equipped with the small opening 903 on gripper 902. The clamping claw 902 on the clamping arm 901 is extended to the silicon chip on the material receiving plate 704 through the second electric telescopic rod 8, and the silicon chip is clamped by matching with the clamping claw 902.
Certainly optionally, a discharge port 401 is formed in the side wall of the reaction box 4 between the clamping jaw 902 and the material receiving plate 704, a material collecting plate 101 matched with the discharge port 401 is arranged in the discharge port 401, the material collecting plate 101 is slidably connected with the inner wall of the reaction box 4, a baffle plate 102 matched with the discharge port 401 is arranged at the end, close to the discharge port 401, of the material collecting plate 101, and a handle 103 is arranged on the baffle plate 102. The setting of collection flitch 101, the ejection of compact of the silicon chip of being convenient for, the setting of handle 103, the staff's of being convenient for operation.
Of course, the conveyor belt 604 may be provided with a placement slot 605. The arrangement of the placing groove 605 is convenient for placing the silicon wafer
Of course, the material receiving plate 704 may be provided with a clamping groove 705. The clamping groove 705 is arranged to facilitate the clamping claws 902 to clamp the silicon wafer from the material receiving plate 704.
Of course, alternatively, the bottom of the adjusting motor 306 is provided with a support pad 307, and a damping spring is arranged in the support pad 307. The provision of the support pad 307 and the shock absorbing spring makes the operation of the adjustment motor 306 more stable.
Certainly, optionally, the supporting rod 703 is an electric telescopic rod capable of automatically stretching and retracting. The supporting rod 703 is an electric telescopic rod capable of automatically stretching and adjusting, and is convenient for adjusting the horizontal position of the material receiving plate 704 when necessary.
Certainly, optionally, a clamping groove is formed in the side of the reaction box 4 below the feeding plate 402, and a clamping block 503 matched with the clamping groove is arranged at one end of the flip cover 502 close to the clamping groove. The clamping groove is matched with the clamping block 503, so that the reaction box 4 can be well sealed by the flip cover 502.
Example two
The embodiment provides a preparation method of an in-situ doped passivation layer of a TOPCon solar cell, which comprises the following steps:
the silicon wafers are flatly laid in a placing groove 605 of a conveyor belt 604;
the material collecting plate 101 is drawn out of the reaction box 4 through the handle 103, the first electric telescopic rod 702 is opened, the material receiving plate 704 on the supporting rod 703 is pushed to the material inlet through the first electric telescopic rod 702, and the first electric telescopic rod 702 is closed;
opening the flip cover 502 above the reaction box 4, opening the adjusting motor 306, driving the first rotating rod 304 to rotate through the adjusting motor 306, the first rotating rod 304 driving the first circular gear 308 to rotate, the first circular gear 308 driving the second circular gear 309 to rotate, the second circular gear 309 driving the seventh rotating rod 303 to rotate, the seventh rotating rod 303 driving the first intermittent gear 310 to rotate, the first intermittent gear 310 intermittently driving the third circular gear 311 to rotate, the third circular gear 311 intermittently driving the second rotating rod 302 to rotate, the second rotating rod 302 driving the third rotating rod 301 to rotate through the belt 321, the third rotating rod 301 driving the sixth rotating rod 602 to rotate, the sixth rotating rod 602 driving the roller 603 to rotate, and the roller 603 driving the conveyor belt 604 to rotate to realize intermittent feeding of the silicon wafers on the conveyor belt 604;
meanwhile, the first rotating rod 304 at the output end of the adjusting motor 306 drives the second intermittent gear 313 to rotate, the second intermittent gear 313 intermittently drives the first bevel gear 314 to rotate, the first bevel gear 314 drives the fourth rotating rod 305 to rotate, the fourth rotating rod 305 drives the second bevel gear 315 to rotate, the second bevel gear 315 drives the fourth circular gear 316 to rotate, the fourth circular gear 316 drives the fifth circular gear 317 to rotate, the fifth circular gear 317 drives the fifth rotating rod 319 to rotate, the fifth rotating rod 319 drives the connecting shaft 701 to rotate, the connecting shaft 701 drives the first electric telescopic rod 702 to rotate, the supporting rod 703 on the first electric telescopic rod 702 rotates, the material receiving plate 704 on the supporting rod 703 rotates, and uniform loading of silicon wafers is realized through the cooperation of the rotation of the material receiving plate 704 and the rotation of the conveying belt 604;
after the feeding is finished, the adjusting motor 306 is closed, the second electric telescopic rod 8 is opened, the clamping claw 902 on the clamping arm 901 extends to the silicon wafer on the material receiving plate 704 through the second electric telescopic rod 8, the silicon wafer is clamped by matching with the clamping claw 902, the second electric telescopic rod 8 is closed, the first electric telescopic rod 702 is opened, the material receiving plate 704 is retracted to the bottom of the reaction box 4, the material collecting plate 101 is inserted into the reaction box 4 through the handle 103, the silicon wafer is isolated on the upper layer in the reaction box 4 through the material collecting plate 101, and the turnover cover 502 is closed;
preparing a silicon oxide thin layer and a doping layer on the silicon wafer on the upper layer of the reaction box 4 to finish the preparation of the in-situ doping layer of the solar cell;
after the preparation of the in-situ doping layer of the solar cell is completed, the silicon wafer is placed on the material collecting plate 101 by loosening the clamping claws 902, and the discharging is completed by matching the handle 103 with the material collecting plate 101.
It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
Claims (9)
1. The preparation system of the TOPCon solar cell in-situ doped passivation layer is characterized by comprising a working box (2), wherein one side of the top of the working box (2) is provided with a through hole (201);
the top of the working box (2) is provided with a material conveying mechanism (6), the material conveying mechanism (6) comprises four supporting plates (601) arranged at the top of the working box (2), an idler wheel is arranged between each two supporting plates (601), sixth rotating rods (602) fixedly connected with each other are arranged on two sides of each idler wheel, each sixth rotating rod (602) is rotatably connected with the corresponding supporting plate (601), and a conveying belt (604) matched with each other is sleeved between the two idler wheels;
the automatic transmission device is characterized in that a transmission mechanism (3) is arranged in the working box (2), the transmission mechanism (3) comprises an adjusting motor (306) arranged at the bottom of the working box (2), an output end of the adjusting motor (306) is provided with a first rotating rod (304), one side, away from the adjusting motor (306), of the first rotating rod (304) is rotatably connected with the side wall of the working box (2), a seventh rotating rod (303) is arranged above the first rotating rod (304) and between the two side walls of the working box (2), the seventh rotating rod (303) is perpendicular to the conveyor belt (604), a first circular gear (308) is sleeved on the first rotating rod (304), a second circular gear (309) is sleeved on the seventh rotating rod (303) in the vertical direction of the first circular gear (308), the first circular gear (308) is meshed with the second circular gear (309), and a first intermittent gear (310) is sleeved on the seventh rotating rod (303), a third rotating rod (301) is arranged at the end of one of the sixth rotating rods (602), a leather sheath is sleeved at the end of the third rotating rod (301), one end, far away from the third rotating rod (301), of the leather sheath penetrates through the through hole (201) and extends into the working box (2), a second rotating rod (302) is sleeved at one end, far away from the third rotating rod (301), of the belt (321), a third circular gear (311) is arranged at the end, far away from the belt (321), of the second rotating rod (302), the third circular gear (311) is meshed with the first intermittent gear (310), a first connecting rod (312) is rotatably connected to one side, far away from the second rotating rod (302), of the third circular gear (311), and the first connecting rod (312) is fixed to the side wall of the working box (2);
a second intermittent gear (313) is sleeved on the first rotating rod (304), one side of the second intermittent gear (313) is in meshed connection with a first bevel gear (314), a fourth rotating rod (305) is arranged in the middle of the first bevel gear (314), a second bevel gear (315) is arranged on one side, away from the second intermittent gear (313), of the fourth rotating rod (305), connecting plates (320) are arranged at two ends of the fourth rotating rod (305), the fourth rotating rod (305) is rotatably connected with the connecting plates (320), a fourth circular gear (316) is connected to the second bevel gear (315) in a meshing way, the top of the fourth circular gear (316) is provided with a second connecting rod (318) which is connected in a rotating way, a fifth circular gear (317) is connected to one side of the first circular gear (308) in a meshing manner, and a fifth rotating rod (319) is arranged at the top of the fifth circular gear (317);
one side of the working box (2) is provided with a reaction box (4), the second connecting rod (318) is fixed at the bottom of the reaction box (4), a feeding plate (402) is arranged on the side edge of the reaction box (4) below the conveyor belt (604), a feeding groove (403) is formed in the feeding plate (402), the reaction box (4) is arranged at the top of the fifth rotating rod (319), a material receiving mechanism (7) is arranged in the reaction box (4), the material receiving structure comprises a connecting shaft (701) arranged at the bottom of the reaction box (4), the connecting shaft (701) is rotatably connected with the reaction box (4), the bottom of the connecting shaft (701) is fixedly connected with the fifth rotating rod (319), the top of the connecting shaft (701) is provided with a first electric telescopic rod (702), the output end of the first electric telescopic rod (702) is provided with a supporting rod (703), the end part of the supporting rod (703) far away from the first electric telescopic rod (702) is provided with a material receiving plate (704).
2. The system of claim 1, wherein the TOPCon solar cell in-situ doped passivation layer comprises: reaction box (4) top is equipped with top cap (5), top cap (5) are including fixing keeping away from fixed lid (501) of feed plate (402) one side, fixed lid (501) tip articulates there is flip (502), the bottom of fixed lid (501) is equipped with second electric telescopic handle (8), the output of second electric telescopic handle (8) is equipped with centre gripping arm (901), the tip of centre gripping arm (901) is equipped with gripper jaw (902), be equipped with weeping hole (903) on gripper jaw (902).
3. The system of claim 2, wherein the system comprises: be located gripper jaw (902) with connect between flitch (704) discharge gate (401) have been seted up on reaction box (4) lateral wall, be equipped with collection board (101) of looks adaptation in discharge gate (401), collection board (101) with reaction box (4) inner wall sliding connection, just collection board (101) are close to the tip of discharge gate (401) be equipped with baffle (102) of discharge gate (401) looks adaptation, be equipped with handle (103) on baffle (102).
4. The system of claim 1, wherein the system comprises: the conveying belt (604) is provided with a placing groove (605).
5. The system of claim 1, wherein the system comprises: and a clamping groove (705) is formed in the material receiving plate (704).
6. The system of claim 1, wherein the system comprises: the bottom of the adjusting motor (306) is provided with a supporting pad (307), and a damping spring is arranged in the supporting pad (307).
7. The system of claim 1, wherein the system comprises: the supporting rod (703) is an electric telescopic rod capable of automatically stretching and adjusting.
8. The system of claim 1, wherein the system comprises: a clamping groove is formed in the side edge of the reaction box (4) below the feeding plate (402), and a clamping block (503) matched with the clamping groove is arranged at one end, close to the clamping groove, of the turnover cover (502).
9. A preparation method of an in-situ doped passivation layer of a TOPCon solar cell is characterized by comprising the following steps:
the silicon chip is flatly laid in a placing groove (605) of a conveyor belt (604);
the material collecting plate (101) is drawn out of the reaction box (4) through the handle (103), the first electric telescopic rod (702) is opened, the material receiving plate (704) on the supporting rod (703) is pushed to the material inlet through the first electric telescopic rod (702), and the first electric telescopic rod (702) is closed;
the flip cover (502) above the reaction box (4) is lifted, the adjusting motor (306) is opened, the silicon wafer feeding device is characterized in that a first rotating rod (304) is driven to rotate through an adjusting motor (306), the first rotating rod (304) drives a first circular gear (308) to rotate, the first circular gear (308) drives a second circular gear (309) to rotate, the second circular gear (309) drives a seventh rotating rod (303) to rotate, the seventh rotating rod (303) drives a first intermittent gear (310) to rotate, the first intermittent gear (310) intermittently drives a third circular gear (311) to rotate, the third circular gear (311) intermittently drives a second rotating rod (302) to rotate, the second rotating rod (302) drives a third rotating rod (301) to rotate through a belt (321), the third rotating rod (301) drives a sixth rotating rod (602) to rotate, the sixth rotating rod (602) drives a roller (603) to rotate, and the roller (603) drives a conveyor belt (604) to rotate to realize intermittent feeding of silicon wafers on a conveyor belt (604);
meanwhile, a first rotating rod (304) at the output end of the adjusting motor (306) drives a second intermittent gear (313) to rotate, the second intermittent gear (313) intermittently drives a first bevel gear (314) to rotate, the first bevel gear (314) drives a fourth rotating rod (305) to rotate, the fourth rotating rod (305) drives a second bevel gear (315) to rotate, the second bevel gear (315) drives a fourth circular gear (316) to rotate, the fourth circular gear (316) drives a fifth circular gear (317) to rotate, the fifth circular gear (317) drives a fifth rotating rod (319) to rotate, the fifth rotating rod (319) drives a connecting shaft (701) to rotate, the connecting shaft (701) drives a first electric telescopic rod (702) to rotate, a supporting rod (703) on the first electric telescopic rod (702) rotates, a material receiving plate (704) on the supporting rod (703) rotates, and is matched with the conveyor belt (604) through the rotation of the material receiving plate (704), realizing uniform feeding of the silicon wafers;
after the feeding is finished, the adjusting motor (306) is closed, the second electric telescopic rod (8) is opened, the clamping claw (902) on the clamping arm (901) extends to the silicon wafer on the material receiving plate (704) through the second electric telescopic rod (8), the silicon wafer is clamped by matching with the clamping claw (902), the second electric telescopic rod (8) is closed, the first electric telescopic rod (702) is opened, the material receiving plate (704) is retracted to the bottom of the reaction box (4), the material collecting plate (101) is inserted into the reaction box (4) through the handle (103), the silicon wafer is isolated on the upper layer in the reaction box (4) through the material collecting plate (101), and the turnover cover (502) is closed;
preparing a silicon oxide thin layer and a doping layer on the silicon wafer on the upper layer of the reaction box (4) to complete the preparation of the in-situ doping layer of the solar cell;
after the in-situ doping layer of the solar cell is prepared, the silicon wafer is placed on the material collecting plate (101) by loosening the clamping claws (902), and the handle (103) is matched with the material collecting plate (101) to finish discharging.
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| CN211225366U (en) * | 2019-08-13 | 2020-08-11 | 安徽晶天新能源科技有限责任公司 | Feeding device for silicon wafer sorting |
| CN112271237A (en) * | 2020-11-06 | 2021-01-26 | 江苏杰太光电技术有限公司 | Preparation method and system of TOPCon solar cell in-situ doped passivation layer |
| CN112687765A (en) * | 2020-12-31 | 2021-04-20 | 阳光中科（福建）能源股份有限公司 | Pert solar cell surface passivation device |
| WO2021248469A1 (en) * | 2020-06-12 | 2021-12-16 | 永嘉县麦通机械有限公司 | Environment-friendly texturing apparatus for processing solar battery cells |
| WO2021254084A1 (en) * | 2020-06-15 | 2021-12-23 | 天通日进精密技术有限公司 | Silicon rod loading and unloading device and silicon rod squaring apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN211225366U (en) * | 2019-08-13 | 2020-08-11 | 安徽晶天新能源科技有限责任公司 | Feeding device for silicon wafer sorting |
| WO2021248469A1 (en) * | 2020-06-12 | 2021-12-16 | 永嘉县麦通机械有限公司 | Environment-friendly texturing apparatus for processing solar battery cells |
| WO2021254084A1 (en) * | 2020-06-15 | 2021-12-23 | 天通日进精密技术有限公司 | Silicon rod loading and unloading device and silicon rod squaring apparatus |
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