CN115000190A - All-inorganic CsPbI 3 Perovskite battery and preparation method thereof - Google Patents
All-inorganic CsPbI 3 Perovskite battery and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims abstract description 110
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000011521 glass Substances 0.000 claims abstract description 26
- 230000031700 light absorption Effects 0.000 claims abstract description 23
- 238000010030 laminating Methods 0.000 claims abstract description 12
- 230000005525 hole transport Effects 0.000 claims abstract description 11
- 239000011241 protective layer Substances 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims description 30
- 238000004528 spin coating Methods 0.000 claims description 19
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 18
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 12
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 9
- JMXLWMIFDJCGBV-UHFFFAOYSA-N n-methylmethanamine;hydroiodide Chemical compound [I-].C[NH2+]C JMXLWMIFDJCGBV-UHFFFAOYSA-N 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 8
- WRJWRGBVPUUDLA-UHFFFAOYSA-N chlorosulfonyl isocyanate Chemical compound ClS(=O)(=O)N=C=O WRJWRGBVPUUDLA-UHFFFAOYSA-N 0.000 claims description 6
- 239000002270 dispersing agent Substances 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- -1 chlorosulfonyl Chemical group 0.000 claims description 3
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- 239000001301 oxygen Substances 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000000052 comparative effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002277 temperature effect Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001767 cationic compounds Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001411 inorganic cation Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002892 organic cations Chemical class 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
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Abstract
The invention discloses an all-inorganic CsPbI 3 A perovskite battery and a preparation method thereof comprise the following steps: an electron transport layer is arranged on the conductive glass in a laminating mode; CsPbI is laminated on the electron transport layer 3 A perovskite light-absorbing layer; in the CsPbI 3 A ferrocene protective layer is laminated on the perovskite light absorption layer; a hole transport layer is arranged on the ferrocene protection layer in a laminated mode; laminating an electrode layer on the hole transport layer to obtain the fully inorganic CsPbI 3 A perovskite battery. The invention provides an all-inorganic CsPbI 3 A method of making a perovskite battery, in CsPbI 3 A layer of ferrocene protection layer is prepared on the perovskite light absorption layer to reduce the water content and oxygen in the air to CsPbI 3 Adverse effects caused by the surface of the perovskite light absorbing layer.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to an all-inorganic CsPbI 3 A perovskite battery and a preparation method thereof.
Background
The metal halide perovskite has adjustable components, simple processing method, higher carrier mobility and longer carrier diffusion length, and is rapidly developed in the application of the photoelectric field. The photoelectric conversion efficiency of the organic-inorganic perovskite solar cell is improved from 3.8% which is originally reported in 2009 to 25.5% nowadays. However, there are still several problems to be solved when it comes to commercialization, particularly instability due to volatility and hygroscopicity of organic components. Numerous experiments have demonstrated that organic-inorganic perovskites are very sensitive to external conditions such as moisture, thermal energy, light, electric fields, and ultraviolet radiation. This means that severe environmental conditions are imposed on the operating environment during the manufacturing process. In addition, wide band gap perovskites (1.65-1.75ev) can be placed in series with silicon solar cells or low band gap perovskites solar cells, however wide band gap perovskites are prone to halogen segregation,resulting in poor light stability. To solve the above problems, inorganic cations (Cs) may be used + ) To replace organic cations (MA) + Or FA + ) All-inorganic perovskites may exhibit both relatively excellent optoelectronic properties and improved chemical and thermal stability. Over the past few years, fully inorganic CsPbI 3 Perovskite solar cells have made significant progress, with efficiencies that have broken through 21%. The most important reason for increasing this rapidity is due to the mesophase DMAPbI 3 Thereby improving CsPbI thereof 3 Nucleation and crystallization kinetics of perovskites.
However, for CsPbI 3 The development of perovskite applications still presents some significant challenges, the black phase CsPbI 3 The perovskite is still severely temperature affected as a result of the relatively small factor tolerance of CsPbI 3. Especially when exposed to a humid environment, the black phase quickly changes to the yellow phase, which can seriously affect device performance. Nowadays, devices are generally manufactured under certain humidity conditions, and the moisture and oxygen in the air certainly have adverse effects on the surface of the film.
Disclosure of Invention
The invention mainly aims to provide an all-inorganic CsPbI 3 A perovskite battery and a preparation method thereof, aiming at improving the total inorganic CsPbI 3 Stability of the perovskite battery.
In order to achieve the purpose, the invention provides an all-inorganic CsPbI 3 The preparation method of the perovskite battery comprises the following steps:
an electron transport layer is arranged on the conductive glass in a laminating mode;
CsPbI is laminated on the electron transport layer 3 A perovskite light-absorbing layer;
in the CsPbI 3 A ferrocene protective layer is laminated on the perovskite light absorption layer;
a hole transport layer is arranged on the ferrocene protection layer in a laminating way;
laminating an electrode layer on the hole transport layer to obtain the fully inorganic CsPbI 3 Perovskite battery
Alternatively,in the CsPbI 3 The step of stacking the ferrocene protection layer on the perovskite light absorption layer comprises the following steps:
dispersing ferrocene in a dispersant to obtain a ferrocene solution;
spin coating the ferrocene solution on the CsPbI 3 Annealing the perovskite light absorption layer to obtain the ferrocene protection layer; wherein the annealing temperature is 90-110 ℃, and the annealing time is 3-7 min.
Optionally, the dispersant comprises a chlorobenzene solution.
Optionally, the concentration of the ferrocene solution is a, wherein 0.02mol/L < a <0.06 mol/L.
Optionally, the thickness of the ferrocene protective layer is 5 nm-30 nm.
Optionally, CsPbI is stacked on the electron transport layer 3 The step of perovskite light absorbing layer comprises:
adding dimethylamine hydroiodide, lead iodide and chlorosulfonyl isocyanate into N, N-dimethylformamide solution, mixing, and oscillating for 1-3 h to obtain CsPbI 3 A perovskite precursor solution;
spin coating the CsPbI on the electron-transporting layer 3 Annealing the perovskite precursor solution to obtain a perovskite light absorption layer; wherein the annealing temperature is 200-220 ℃, and the time is 3-7 min.
Optionally, the molar ratio of the dimethylamine hydroiodide to the lead iodide to the chlorosulfonyl is (0.5-1.5) to 1: 1.
Optionally, the step of disposing an electron transport layer on the conductive glass in a stacked manner includes:
spin coating titanium n-butyl alcohol solution on the conductive glass, and annealing at 100-120 ℃ for 10-12 min to obtain the electron transfer layer.
Optionally, before the step of stacking and disposing an electron transport layer on the conductive glass, the method further comprises:
and ultrasonically cleaning the conductive glass in deionized water, absolute ethyl alcohol, acetone and isopropyl acetone for 15-20 min in sequence, and finally drying the conductive glass by using nitrogen.
The invention also provides a full inorganicCsPbI 3 The perovskite battery comprises conductive glass, an electron transmission layer, a perovskite light absorption layer, a ferrocene protection layer, a hole transmission layer and an electrode layer which are sequentially stacked.
The invention provides an all-inorganic CsPbI 3 The perovskite battery is prepared by a method, because when the perovskite battery is exposed to a humid environment, a black phase can quickly change into a yellow phase, and the yellow phase can seriously affect the performance of a device. Nowadays, devices are generally manufactured under certain humidity conditions, and the moisture and oxygen in the air certainly have adverse effects on the surface of the film. Therefore, by using the CsPbI 3 A ferrocene protection layer is stacked on the perovskite light absorption layer and can protect the CsPbI 3 The black phase of the perovskite light absorbing layer is protected from temperature effects. Thereby improving the total inorganic CsPbI 3 Stability of perovskite battery, and reduction of moisture and oxygen in air to CsPbI 3 Adverse effects caused by the surface of the perovskite light absorbing layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other related drawings can be obtained according to the drawings without creative efforts.
FIG. 1 shows an all-inorganic CsPbI provided by the present invention 3 A schematic flow diagram of an embodiment of a method of making a perovskite battery;
FIG. 2 is an XRD pattern of the ferrocene protection layer provided in example 1, comparative example 1 to comparative example 3;
FIG. 3 is an SEM image of the ferrocene protecting layers provided in example 1 and comparative examples 1 to 3;
FIG. 4 is an XRD pattern of the perovskite light absorbing layers of example 1 and comparative example 3 at a relative humidity of 60% for 0h, 0.5h, 1h, 1.5h and 2 h.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below. It should be apparent that the described embodiments are only some of the embodiments of the present invention, and not all of the embodiments.
It should be noted that those who do not specify specific conditions in the examples were performed under the conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially. In addition, the meaning of "and/or" appearing throughout includes three juxtapositions, exemplified by "A and/or B" including either A or B or both A and B. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
For CsPbI 3 The development of perovskite applications still presents some significant challenges, the black phase CsPbI 3 The perovskite is still severely temperature affected, which is CsPbI 3 Relatively less factor tolerant results. Especially when exposed to humid environments, the black phase quickly changes to the yellow phase, which can seriously affect device performance. Nowadays, devices are generally manufactured under certain humidity conditions, and the moisture and oxygen in the air certainly have adverse effects on the surface of the film. In view of this, the invention provides a preparation method of an all-inorganic CsPbI3 perovskite battery, so that the all-inorganic CsPbI3 perovskite battery can be free from the influence of moisture and oxygen in the air during preparation.
The invention provides an all-inorganic CsPbI 3 Method for preparing perovskite battery, and the all-inorganicCsPbI 3 The preparation method of the perovskite battery comprises the following steps:
step S10, laminating an electron transport layer on the conductive glass;
specifically, step S10 includes:
step S01: and ultrasonically cleaning the conductive glass in deionized water, absolute ethyl alcohol, acetone and isopropyl acetone for 15-20 min in sequence, and finally drying the conductive glass by using nitrogen.
In this embodiment, the conductive glass is FTO conductive glass, and in other embodiments, the conductive glass may also be made of other materials, which is not limited herein.
And step S02, spin-coating titanium n-butyl alcohol solution on the conductive glass, and annealing at 100-120 ℃ for 10-12 min to obtain the electron transport layer.
In this embodiment, the electron transport layer is titanium dioxide, in other embodiments, the electron transport layer may also be made of other materials, such as tin dioxide, PCBM, etc., and is not specifically limited herein, it is to be noted that the spin coating rate is gradually increased, the increasing rate is limited according to the actual situation, the initial speed is 2000rpm/s, and the stopping speed is 4000 rpm/s; when the electron transport layer is a multilayer structure, one solution needs to be spin-coated first, and after annealing, the other solution needs to be spin-coated, and annealing is performed again. It is noted that the spin coating time is 30 to 40 seconds.
Step S20, stacking CsPbI on the electron transport layer 3 A perovskite light-absorbing layer;
specifically, the step S20 includes:
step S21, adding dimethylamine hydroiodide, lead iodide and chlorosulfonyl isocyanate into the N, N-dimethylformamide solution, mixing, and oscillating for 1-3 h to obtain CsPbI 3 A perovskite precursor solution;
step S22, spin-coating the CsPbI on the electron transport layer 3 Annealing the perovskite precursor solution to obtain a perovskite light absorption layer; wherein the annealing temperature is 200-220 ℃, and the time is 3-7 min. Preferably, the annealing temperature is 210 ℃ and the annealing time is 5 min.
Specifically, the molar ratio of the dimethylamine hydroiodide to the lead iodide to the chlorosulfonyl is (0.5-1.5) to 1: 1. It is worth noting that CsPbI was spin-coated 3 The perovskite precursor solution was spin-coated at 3000rpm for 30 seconds.
Step S30, in the CsPbI 3 A ferrocene protective layer is laminated on the perovskite light absorption layer;
specifically, the step S30 includes:
s31, dispersing ferrocene in a dispersing agent to obtain a ferrocene solution;
step S32, spin-coating the ferrocene solution on the CsPbI 3 Annealing the perovskite light absorption layer to obtain the ferrocene protection layer; wherein the annealing temperature is 90-110 ℃, and the annealing time is 3-7 min;
specifically, the dispersant comprises a chlorobenzene solution, the concentration of the ferrocene is A, wherein the concentration of the ferrocene is 0.02mol/L<A<0.06mol/L, when spin-coating, the CsPbI 3 And (3) placing the perovskite light absorption layer on a spin coater, preferably rotating at 5000rpm, spin-coating ferrocene solution for 40s, annealing for 5min, and naturally cooling.
It is worth to say that the thickness of the ferrocene protection layer is 5nm to 30 nm.
Step S40, stacking a hole transport layer on the ferrocene protection layer;
step S50, laminating an electrode layer on the hole transport layer to obtain the fully inorganic CsPbI 3 A perovskite battery.
The invention provides an all-inorganic CsPbI 3 A method for preparing a perovskite battery by applying CsPbI to the perovskite battery 3 A ferrocene protection layer is stacked on the perovskite light absorption layer and can protect the CsPbI 3 The black phase of the perovskite light absorbing layer is protected from temperature effects. Thereby improving the total inorganic CsPbI 3 The stability of the perovskite battery reduces the adverse effect of moisture and oxygen in the air on the surface of the thin film.
In addition, the invention also provides an all-inorganic CsPbI 3 A perovskite battery comprising a stack of layers in sequenceThe light-absorbing material comprises conductive glass, an electron transport layer, a perovskite light-absorbing layer, a ferrocene protective layer, a hole transport layer and an electrode layer.
The technical solutions of the present invention are further described in detail below with reference to specific examples and drawings, it should be understood that the following examples are merely illustrative of the present invention and are not intended to limit the present invention.
Example 1
(1) Ultrasonically cleaning FTO conductive glass in deionized water, absolute ethyl alcohol, acetone and isopropyl acetone for 15-20 min in sequence, and finally drying the FTO conductive glass by using nitrogen;
(2) spin-coating 0.2mol/L titanium n-butyl alcohol solution on FTO conductive glass, and annealing at 100 ℃ for 10min to obtain an electron transport layer, wherein the initial spin-coating speed is 2000rpm, the stopping speed is 4000rpm, the spin-coating time is 30s, and the speed is increased by 67rpm per second;
(3) adding dimethylamine hydroiodide, lead iodide and chlorosulfonyl isocyanate into N, N-dimethylformamide solution according to the mol ratio of 1: 1, mixing, and oscillating for 2h to obtain CsPbI 3 A perovskite precursor solution; spin coating the CsPbI on the electron transport layer 3 Annealing the perovskite precursor solution to obtain a perovskite light absorption layer; wherein the annealing temperature is 210 ℃ and the annealing time is 5 min. Preferably, the annealing temperature is 210 ℃ and the annealing time is 5min, so that CsPbI is obtained 3 Perovskite light-absorbing layer
(4) Dispersing ferrocene into chlorobenzene solution to obtain 0.03mol/L ferrocene solution, and spin-coating the ferrocene solution on the CsPbI at the rotating speed of 5000rpm 3 Spin-coating the perovskite light absorption layer for 40s, annealing for 5min, and naturally cooling to obtain a ferrocene protection layer; wherein the thickness of the ferrocene protective layer is 10 nm.
(5) A hole transport layer is arranged on the ferrocene protection layer in a laminated mode;
(6) laminating an electrode layer on the hole transport layer to obtain the fully inorganic CsPbI 3 A perovskite battery.
Example 2
In this example, all-inorganic CsPbI 3 The preparation method of the perovskite battery comprises the following stepsAll as in example 1:
(3) adding dimethylamine hydroiodide, lead iodide and chlorosulfonyl isocyanate into the N, N-dimethylformamide solution according to the molar ratio of 0.5: 1 and mixing.
(4) The concentration of the ferrocene solution is 0.03mol/L, and the thickness of the ferrocene protective layer is 5 nm-30 nm
Example 3
In this example, all-inorganic CsPbI 3 The perovskite battery preparation method is the same as that of the embodiment 1 except that the following steps are changed:
(3) adding dimethylamine hydroiodide, lead iodide and chlorosulfonyl isocyanate into the N, N-dimethylformamide solution according to the mol ratio of 1.5: 1, and mixing.
(4) Ferrocene solution concentration is 0.03mol/L, thickness of ferrocene protection layer is 5 nm-30 nm comparative example 1
In this example, all-inorganic CsPbI 3 The perovskite battery preparation method is the same as that of the embodiment 1 except that the following steps are changed:
(4) the concentration of the ferrocene solution is 0.03 mol/L.
Comparative example 2
In this example, all-inorganic CsPbI 3 The perovskite battery preparation method is the same as that of the embodiment 1 except that the following steps are changed:
(4) the concentration of the ferrocene solution is 0.03 mol/L.
Comparative example 3
In this example, all-inorganic CsPbI 3 The perovskite cell was prepared in the same manner as in example 1, except that the step (4) was not performed.
Analysis of results
Referring to FIG. 3, CsPbI is shown when no ferrocene protection layer is formed and the ferrocene solution is at 0.02mol/L 3 The perovskite light absorption layer has large gaps and cannot play a role in CsPbI 3 The perovskite light absorption layer is well protected, and when the ferrocene solution is 0.06mol/L, CsPbI 3 Structural distribution of perovskite light absorption layer is not uniform, for CsPbI 3 The stability of the perovskite light-absorbing layer also arisesAnd (4) influence.
The above are only preferred embodiments of the present invention, and do not limit the scope of the present invention, and it is obvious to those skilled in the art that various modifications and variations can be made in the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall be included in the scope of the present invention.
Claims (10)
1. All-inorganic CsPbI 3 The preparation method of the perovskite battery is characterized by comprising the following steps:
an electron transport layer is arranged on the conductive glass in a laminating mode;
CsPbI is laminated on the electron transport layer 3 A perovskite light-absorbing layer;
in the CsPbI 3 A ferrocene protective layer is laminated on the perovskite light absorption layer;
a hole transport layer is arranged on the ferrocene protection layer in a laminated mode;
laminating an electrode layer on the hole transport layer to obtain the fully inorganic CsPbI 3 A perovskite battery.
2. The all-inorganic CsPbI of claim 1, wherein 3 The preparation method of the perovskite battery is characterized in that CsPbI is adopted 3 The step of stacking the ferrocene protection layer on the perovskite light absorption layer comprises the following steps:
dispersing ferrocene in a dispersant to obtain a ferrocene solution;
spin coating the ferrocene solution on the CsPbI 3 Annealing the perovskite light absorption layer to obtain the ferrocene protection layer; wherein the annealing temperature is 90-110 ℃, and the annealing time is 3-7 min.
3. The all-inorganic CsPbI of claim 2, wherein 3 The preparation method of the perovskite battery is characterized in that the dispersing agent comprises chlorobenzene solution.
4. The all-inorganic CsPbI of claim 2, wherein 3 The preparation method of the perovskite battery is characterized in that the concentration of the ferrocene solution is A, wherein the concentration is 0.02mol/L<A<0.06mol/L。
5. The all-inorganic CsPbI of claim 1, wherein 3 The preparation method of the perovskite battery is characterized in that the thickness of the ferrocene protection layer is 5 nm-30 nm.
6. The all-inorganic CsPbI of claim 1, wherein 3 The preparation method of the perovskite battery is characterized in that CsPbI is arranged on the electron transport layer in a stacking mode 3 The step of perovskite light absorbing layer comprises:
adding dimethylamine hydroiodide, lead iodide and chlorosulfonyl isocyanate into N, N-dimethylformamide solution, mixing, and oscillating for 1-3 h to obtain CsPbI 3 A perovskite precursor solution;
spin coating the CsPbI on the electron transport layer 3 Annealing the perovskite precursor solution to obtain a perovskite light absorption layer; wherein the annealing temperature is 200-220 ℃, and the time is 3-7 min.
7. The all-inorganic CsPbI of claim 6, wherein 3 The preparation method of the perovskite battery is characterized in that the molar ratio of the dimethylamine hydroiodide to the lead iodide to the chlorosulfonyl is (0.5-1.5) to 1: 1.
8. The all-inorganic CsPbI of claim 1, wherein 3 The preparation method of the perovskite battery is characterized in that the step of laminating and arranging the electron transport layer on the conductive glass comprises the following steps:
spin coating titanium n-butyl alcohol solution on the conductive glass, and annealing at 100-120 ℃ for 10-12 min to obtain the electron transfer layer.
9. The all-inorganic CsPbI of claim 1, wherein 3 The perovskite battery preparation method is characterized in that before the step of laminating and arranging the electron transport layer on the conductive glass, the method further comprises the following steps:
and ultrasonically cleaning the conductive glass in deionized water, absolute ethyl alcohol, acetone and isopropyl acetone for 15-20 min in sequence, and finally drying the conductive glass by using nitrogen.
10. All-inorganic CsPbI 3 The perovskite battery is characterized by comprising conductive glass, an electron transmission layer, a perovskite light absorption layer, a ferrocene protection layer, a hole transmission layer and an electrode layer which are sequentially stacked.
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