CN114999984A - Bonding apparatus and bonding method - Google Patents

Bonding apparatus and bonding method Download PDF

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Publication number
CN114999984A
CN114999984A CN202210726733.8A CN202210726733A CN114999984A CN 114999984 A CN114999984 A CN 114999984A CN 202210726733 A CN202210726733 A CN 202210726733A CN 114999984 A CN114999984 A CN 114999984A
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bonded
bonding
head
bonding head
chip
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Chinese (zh)
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陈帮
周云鹏
陶超
郭万里
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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Wuhan Xinxin Semiconductor Manufacturing Co Ltd
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Priority to CN202210726733.8A priority Critical patent/CN114999984A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
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  • Die Bonding (AREA)

Abstract

The invention provides a bonding device and a bonding method, wherein a first body to be bonded is picked up from a first bearing table through a picking part, the picked first body to be bonded is turned over upwards from a first surface to a second surface through a turning part, the turned first body to be bonded is adsorbed through the lower part of a bonding head, the lower part of the bonding head with the first body to be bonded is moved to a position between the upper part of the bonding head and a second bearing table through a transmission part, after the upper part of the bonding head is connected with the lower part of the bonding head, the first body to be bonded is aligned with a second body to be bonded on the second bearing table through the horizontal movement of the second bearing table, and the lower part of the bonding head with the first body to be bonded is driven by the upper part of the bonding head to move vertically so as to bond the first body to be bonded on the second body to be bonded. According to the technical scheme, the alignment precision of the first body to be bonded and the second body to be bonded is improved, and meanwhile, the bonding productivity can be improved.

Description

Bonding apparatus and bonding method
Technical Field
The present invention relates to the field of semiconductors, and in particular, to a bonding apparatus and a bonding method.
Background
At present, in a chip-to-wafer bonding process, a single chip needs to be bonded on another complete wafer, and a problem to be solved urgently in the process is a bonding capacity problem. In which the chip pick-up speed is already high (e.g. up to 100 ms/chip), therefore, the throughput improvement bottleneck is mainly in the moving time of the bonding head and the alignment time and bonding time of each chip during the bonding process.
There are currently two types of bonding devices:
in one of the bonding apparatuses, after the bonding head sucks the chip from the chip pick-up mechanism, the bonding head moves along the guide rail until the bonding head moves above the wafer, and then the chip is bonded with the wafer, and the wafer is kept still in the whole process. However, the movement stroke of the bonding head on the guide rail is too long, so that the designed alignment accuracy cannot be achieved; if the high-power clear lens for alignment is integrated on the bonding head, the volume and the weight of the high-power clear lens are large, so that when the bonding head moves horizontally to realize alignment, the inertia of the bonding head when the bonding head stops is large, the position where the bonding head stops is inaccurate, a chip on the bonding head cannot be aligned with a position to be bonded on a wafer, and the alignment precision is further reduced.
Compared with the bonding device, in another bonding device, a cantilever turntable structure is designed for conveying a chip to a bonding head, and the length of a guide rail is shortened, but the bonding head still needs to move along the horizontal direction, and after a high-definition lens is integrated on the bonding head, the chip on the bonding head still cannot be aligned with a position to be bonded on a wafer.
In addition, in the two bonding apparatuses, alignment is required before each chip and wafer bonding, which results in low bonding efficiency and low bonding productivity. Accordingly, there is a need for an improved bonding apparatus that addresses at least one of the problems discussed above.
Disclosure of Invention
The invention aims to provide a bonding device and a bonding method, which can improve the alignment precision of a first body to be bonded and a second body to be bonded and can also improve the bonding productivity.
To achieve the above object, the present invention provides a bonding apparatus including a first stage and a second stage that are horizontally movable, the bonding apparatus including:
the picking mechanism is vertically movably arranged above the first bearing table and comprises a picking part and a turning part, the picking part is arranged at two ends of the turning part and used for picking a first body to be bonded from the first bearing table, and the turning part is used for turning the picked first body to be bonded from a first surface to a second surface;
the conveying mechanism comprises a conveying part and a lower part of a bonding head, and the lower part of the bonding head is detachably arranged on the conveying part and used for adsorbing the overturned first body to be bonded;
the bonding mechanism is vertically movably arranged above the second bearing table and comprises a bonding head upper part and a bonding head lower part, wherein the bonding head upper part is detachably connected with the bonding head lower part; the conveying part is used for enabling the lower part of the bonding head adsorbed with the first body to be bonded to move to a position between the upper part of the bonding head and the second bearing table, and further enabling the first body to be bonded to be aligned with a second body to be bonded on the second bearing table through the horizontal movement of the second bearing table after the upper part of the bonding head is connected with the lower part of the bonding head, and the upper part of the bonding head drives the lower part of the bonding head adsorbed with the first body to be bonded to move vertically so as to bond the first body to be bonded on the second body to be bonded.
Optionally, the displacement of the upper part of the bonding head in the horizontal direction is 0, and the displacement of the second bearing table in the vertical direction is 0.
Optionally, a second alignment system is integrated on the upper portion of the bond head, and the second alignment system is configured to identify a horizontal distance between the first to-be-bonded body adsorbed on the lower portion of the bond head and a fixed reference point on the upper portion of the bond head after the upper portion of the bond head is connected to the lower portion of the bond head, so as to compensate for a deviation between the first to-be-bonded body and the second to-be-bonded body when the first to-be-bonded body is bonded to the second to-be-bonded body.
Optionally, a first alignment system is integrated on the picking mechanism, and the first alignment system is used for aligning the first to-be-bonded body with the picking mechanism through the movement of the first carrier in the horizontal direction.
Optionally, the resolution of the second alignment system is greater than the resolution of the first alignment system.
Optionally, the moving precision of the second bearing table is greater than that of the first bearing table.
Optionally, the first surface is a front surface of the first body to be bonded, and the second surface is a back surface of the first body to be bonded.
Optionally, the pick-up and/or the lower bond head portion is a bernoulli nozzle or a vacuum nozzle.
Optionally, the lower bonding head part and the conveying part are vacuum-absorbed or magnetically absorbed, so that the lower bonding head part is detachably arranged on the conveying part; and/or vacuum adsorption or magnetic adsorption is carried out between the upper bonding head part and the lower bonding head part, so that the upper bonding head part and the lower bonding head part are detachably connected.
The invention also provides a bonding method, which is used for bonding a first body to be bonded on a second body to be bonded by the bonding device and comprises the following steps:
picking up the first body to be bonded from the first bearing table by using the picking part;
the first body to be bonded which is picked up is turned from the first surface to the second surface by the turning part;
adsorbing the turned first body to be bonded by adopting the lower part of the bonding head;
moving the lower part of the bonding head, which is adsorbed with the first body to be bonded, to a position between the upper part of the bonding head and the second bearing table by using the conveying part;
and moving the upper part of the bonding head vertically to enable the lower part of the bonding head to be separated from the conveying part after the upper part of the bonding head is connected with the lower part of the bonding head, enabling the first body to be bonded to be aligned with the second body to be bonded through the horizontal movement of the second bearing table, and driving the lower part of the bonding head, which adsorbs the first body to be bonded, to move vertically to bond the first body to be bonded to the second body to be bonded.
Optionally, after the upper bond head portion is connected with the lower bond head portion, the bonding method further includes:
and identifying a horizontal distance between the first body to be bonded adsorbed at the lower part of the bonding head and a fixed reference point on the upper part of the bonding head by adopting a second alignment system integrated at the upper part of the bonding head so as to compensate the deviation between the first body to be bonded and the second body to be bonded when the first body to be bonded is bonded on the second body to be bonded.
Optionally, after the upper bond head portion is connected with the lower bond head portion, the bonding method further includes:
establishing a coordinate system by taking the circle center of the second body to be bonded as an origin;
and recognizing an alignment mark on the second body to be bonded by adopting the second alignment system, and calculating a deviation between an actual position to be bonded on the second body to be bonded and a theoretical position to be bonded in the coordinate system so as to compensate the deviation between the actual position to be bonded on the first body to be bonded and the actual position to be bonded on the second body to be bonded when the first body to be bonded is bonded on the second body to be bonded.
Optionally, after the first body to be bonded is bonded to the second body to be bonded, the upper bonding head portion drives the lower bonding head portion to move vertically in a direction away from the second body to be bonded, and after the lower bonding head portion is connected to the transfer portion, the upper bonding head portion is separated from the lower bonding head portion.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
1. the bonding device comprises a picking mechanism, a transmission mechanism and a bonding mechanism, wherein the picking mechanism comprises a picking part and a turnover part, the transmission mechanism comprises a transmission part and a bonding head lower part, the bonding mechanism comprises a bonding head upper part, a first body to be bonded is picked from a first bearing table through the picking part, the first body to be bonded which is picked is turned upwards from a first surface to a second surface upwards through the turnover part, the first body to be bonded which is turned upwards is adsorbed through the bonding head lower part, the bonding head lower part with the first body to be bonded adsorbed is moved to the bonding head upper part and a second bearing table through the transmission part, and after the bonding head upper part is connected with the bonding head lower part, the first body to be bonded is aligned with a second body to be bonded on the second bearing table through the second bearing table moving in the horizontal direction, and the upper part of the bonding head drives the lower part of the bonding head adsorbed with the first body to be bonded to move vertically so as to bond the first body to be bonded to the second body to be bonded. The lower part of the bonding head for adsorbing and overturning the first body to be bonded is detachably connected with the upper part of the bonding head, the first body to be bonded is aligned with the second body to be bonded through the horizontal movement of the second bearing table, and the horizontal upward displacement of the upper part of the bonding head is 0, so that a high-power clear lens with larger volume and weight can be integrated on the upper part of the bonding head, the upper part of the bonding head cannot be influenced, and the alignment precision of the first body to be bonded and the second body to be bonded is improved.
2. The bonding method of the invention adopts the bonding device to bond the first body to be bonded on the second body to be bonded, and specifically comprises the following steps: picking up the first body to be bonded from the first bearing table by using the picking part; the first body to be bonded which is picked up is turned from the first surface to the second surface by the turning part; adsorbing the turned first body to be bonded by adopting the lower part of the bonding head; moving the lower part of the bonding head absorbed with the first body to be bonded to a position between the upper part of the bonding head and the second bearing table by adopting the conveying part; and moving the upper part of the bonding head vertically to enable the lower part of the bonding head to be separated from the conveying part after the upper part of the bonding head is connected with the lower part of the bonding head, enabling the first body to be bonded to be aligned with the second body to be bonded through the horizontal movement of the second bearing table, and driving the lower part of the bonding head, which adsorbs the first body to be bonded, to move vertically to bond the first body to be bonded to the second body to be bonded. The lower part of the bonding head for adsorbing and overturning the first body to be bonded is detachably connected with the upper part of the bonding head, the first body to be bonded is aligned with the second body to be bonded through the horizontal movement of the second bearing table, and the horizontal upward displacement of the upper part of the bonding head is 0, so that a high-power clear lens with larger volume and weight can be integrated on the upper part of the bonding head, the upper part of the bonding head cannot be influenced, and the alignment precision of the first body to be bonded and the second body to be bonded is improved.
Drawings
FIG. 1 is a schematic front view of a bonding apparatus;
FIG. 2 is a schematic front view of another bonding apparatus;
FIG. 3 is a schematic front view of a bonding apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic top view of the chip transport mechanism in the bonding apparatus shown in FIG. 3;
fig. 5 is a flow chart of a bonding method according to an embodiment of the invention.
Wherein the reference numerals of figures 1 to 5 are as follows:
11-a first carrier table; 111-chip; 12-a chip pick-up mechanism; 13-a second carrier table; 131-wafer; 14-a bond head; 15-a guide rail; 16-a first cantilever turntable structure; 17-a second cantilever turntable structure; 21-a first carrier table; 211-chip; 221-a pickup; 222-a turning part; 223-a first alignment system; 231-spokes; 232-lower part of bond head; 233-a drive shaft; 234-a fixed ring; 241-the upper part of the bonding head; 242-a second alignment system; 25-a second carrier table; 251-wafer.
Detailed Description
Two types of prior art bonding apparatus are shown in fig. 1 and 2:
in the bonding apparatus shown in fig. 1, the chip pick-up mechanism 12 first picks up and flips the chip 111 from the first carrier 11, the bonding head 14 adsorbs the flipped chip 111, and then the bonding head 14 moves horizontally on the guide rail 15, so that the bonding head 14 moves above the wafer 131 on the second carrier 13 with the chip 111 to perform bonding, and the second carrier 13 remains stationary during the above process. The movement stroke of the bonding head 14 on the guide rail 15 is as long as more than 700mm, so that the designed alignment precision which cannot be achieved is less than 200 nm; moreover, if the high-power-definition lens for alignment is integrated on the bonding head 14, since the volume and the weight of the high-power-definition lens are both large, when the alignment is realized by the horizontal movement of the bonding head 14, the inertia of the bonding head 14 when the bonding head 14 stops after moving along the horizontal direction is large, so that the position where the bonding head 14 stops is inaccurate, the chip 111 on the bonding head 14 cannot be aligned with the position to be bonded on the wafer 131, and the alignment precision is further reduced.
Compared with the bonding apparatus shown in fig. 1, in the bonding apparatus shown in fig. 2, the first cantilever turntable structure 16 and the second cantilever turntable structure 17 are added, and the length of the guide rail 15 is shortened, so that the moving stroke of the bonding head 14 on the guide rail 15 is shortened to 300 mm; after the chip pickup mechanism 12 picks up and flips the chip 111, the flipped chip 111 is transferred to the bond head 14 through the first cantilever turntable structure 16 and the second cantilever turntable structure 17, and then the bond head 14 moves on the guide rail 15 along the horizontal direction, so that the bond head 14 carries the chip 111 to move above the wafer 131 on the second carrier table 13 for bonding, and the second carrier table 13 remains stationary in the above process. In the bonding apparatus shown in fig. 2, although the movement stroke of the bond head 14 is shortened, the bond head 14 still moves in the horizontal direction, and after a high definition lens is integrated on the bond head 14, the chip 111 on the bond head 14 still cannot be aligned with the position to be bonded on the wafer 131; further, if the chip pickup mechanism 12 contacts the front surface of the chip 111 when picking up the chip 111, the first cantilever turntable structure 16 contacts the back surface of the chip 111, the second cantilever turntable structure 17 contacts the front surface of the chip 111, and the bonding head 14 contacts the back surface of the chip 111 during the transfer of the chip 111, so that the number of times the front surface of the chip 111 is contacted increases, and further, it is difficult to control defects on the front surface of the chip 111.
Also, in the bonding apparatus shown in fig. 1 and 2, alignment is required before each bonding of the chip 111 and the wafer 131, resulting in low bonding efficiency and low bonding throughput.
Therefore, the invention provides a bonding device and a bonding method, which can improve the alignment precision of a chip and a wafer and can also improve the bonding productivity.
In order to make the objects, advantages and features of the present invention more apparent, the bonding apparatus and the bonding method according to the present invention will be described in further detail below. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
An embodiment of the present invention provides a bonding apparatus, including a first stage and a second stage that are horizontally movable, the bonding apparatus including: the picking mechanism is arranged above the first bearing table in a vertically movable mode and comprises a picking part and a turning part, the picking part is arranged at two ends of the turning part and used for picking a first body to be bonded from the first bearing table, and the turning part is used for turning the picked first body to be bonded from a first surface to a second surface; the conveying mechanism comprises a conveying part and a lower part of a bonding head, and the lower part of the bonding head is detachably arranged on the conveying part and used for adsorbing the overturned first body to be bonded; the bonding mechanism is vertically movably arranged above the second bearing table and comprises a bonding head upper part and a bonding head lower part, wherein the bonding head upper part is detachably connected with the bonding head lower part; the conveying part is used for enabling the lower part of the bonding head adsorbed with the first body to be bonded to move to a position between the upper part of the bonding head and the second bearing table, and further enabling the first body to be bonded to be aligned with a second body to be bonded on the second bearing table through the horizontal movement of the second bearing table after the upper part of the bonding head is connected with the lower part of the bonding head, and the upper part of the bonding head drives the lower part of the bonding head adsorbed with the first body to be bonded to move vertically so as to bond the first body to be bonded on the second body to be bonded.
The bonding apparatus provided in this embodiment will be described in more detail with reference to fig. 3 to 4. Also, a vertical coordinate system is established, and horizontal movement in the following description means movement in the X direction and the Y direction of a horizontal plane, the X direction being perpendicular to the Y direction, and vertical movement means movement in the Z direction.
The bonding apparatus can be used for chip-to-wafer bonding, wafer-to-wafer bonding, or chip-to-chip bonding, or can also be used for bonding between other types of chips (e.g., chip-to-glass bonding), without limitation.
Preferably, the bonding apparatus is configured to bond a chip on a wafer, where the chip is located on a first carrying table, and the wafer is located on a second carrying table, that is, the first to-be-bonded body is the chip, and the second to-be-bonded body is the wafer.
The bonding apparatus will be described below by taking as an example the case where the chip 211 on the first stage 21 is bonded to the wafer 251 on the second stage 25.
The plurality of chips 211 are disposed on the first carrier 21, the first carrier 21 can move horizontally, and the pick-up mechanism can be vertically movably disposed above the first carrier 21. By the movement of the first bearing table 21 in the horizontal direction and the vertical movement of the picking mechanism, all the chips 211 can be picked and turned over in sequence.
A plurality of chips 211 obtained by cutting a wafer (not shown) may be placed on a blue film (not shown), and the blue film on which the plurality of chips 211 are placed may be placed and fixed on the first stage 21 by a robot arm (not shown).
Preferably, a first alignment system 223 is integrated on the picking mechanism, and the mechanical arm is in signal connection with the first alignment system 223; before a blue film with a plurality of chips 211 is placed on the first carrier table 21 by using a mechanical arm, the first alignment system 223 is used to identify the alignment mark on the first carrier table 21, so that the blue film and the chips 211 can be aligned with the first carrier table 21, and the blue film can be accurately placed at a set position on the first carrier table 21. Moreover, since the position coordinates of each chip 211 on the blue film are known after a wafer is diced, after the blue film is placed on the first stage 21, each chip 211 is also located on the corresponding set position on the first stage 21, that is, the position of each chip 211 on the first stage 21 is also known.
The picking mechanism comprises a picking part 221 and a turning part 222, the picking part 221 is arranged at two ends of the turning part 222, the picking part 221 is used for picking the chip 211 from a blue film on the first bearing table 21, and the turning part 222 is used for turning the picked chip 211 from a first face to a second face.
Preferably, before picking up the chip 211 by the picking part 221, the first alignment system 223 is used to identify the alignment mark on the first carrier table 21, so that the picking mechanism is aligned with the first carrier table 21.
Since the chip 211 is aligned with the first stage 21 and the pickup mechanism is aligned with the first stage 21, the chip 211 is aligned with the pickup mechanism, so that the pickup part 221 can accurately pick up each chip 211 on the blue film.
The first carrier 21 and the pick-up mechanism are both capable of moving horizontally and vertically. Preferably, in the process of aligning the blue film and the chip 211 with the first carrier 21 and aligning the pickup mechanism with the first carrier 21, the horizontal displacement of the pickup mechanism is 0, the vertical displacement of the first carrier 21 is 0, and the alignment of the chip 211 with the pickup mechanism is realized only by the horizontal movement of the first carrier 21.
The turning part 222 may have one or at least two. When there is only one of the turning parts 222, the center of the turning part 222 is fixed on the picking mechanism, and when the picking surface of the picking part 221 at one end of the turning part 222 is downward, the picking surface of the picking part 221 at the other end of the turning part 222 is upward; after the chip 211 is turned over, the pickup surface of the pickup portion 221 located at the one end of the turning portion 222 is turned upward, and the pickup surface of the pickup portion 221 located at the other end of the turning portion 222 is turned downward. When there are at least two turning parts 222, the center of each turning part 222 is fixed to the picking mechanism, the centers of the turning parts 222 may be overlapped or not overlapped, and the chips 211 are alternately picked up and turned over in a windmill shape when the centers of the turning parts 222 are overlapped.
After the chip 211 is aligned with the pick-up mechanism, the step of the pick-up mechanism picking up and flipping the chip 211 may include: first, the first stage 21 is horizontally moved to align the chip 211 to be picked up with the pickup part 221 facing downward; then, the pickup mechanism is moved down in the vertical direction so that the pickup portion 221 picks up the chip 211; then, the pick-up mechanism is moved upwards vertically, and the flipping unit 222 drives the pick-up unit 221 that picks up the chip 211 to rotate on a vertical plane, so that the picked-up chip 211 is flipped from a first plane to a second plane, and after flipping, the flipping unit 222 rotates on a horizontal plane to drive the pick-up unit 221 that picks up the chip 211 to rotate to a position opposite to the lower bond head 232. After the above steps, the flipping unit 222 continues to rotate in the vertical plane to flip the pick-up unit 221 with the pick-up surface upward (at this time, the chip 211 on the pick-up unit 221 with the pick-up surface upward is picked up by the subsequent lower portion 232 of the bond head) to the pick-up surface downward, and rotates the pick-up surface to the position where the picked-up chip 211 is located on the first carrier table 21, so that after the first carrier table 21 moves the chip 211 to be picked up subsequently to this position by the horizontal movement, the above steps are repeated until the pick-up of all the chips 211 on the first carrier table 21 is completed.
In addition, the first surface may be a front surface of the chip 211, the second surface may be a back surface of the chip 211, various device structures are formed on the front surface of the chip 211, the back surface of the chip 211 is a substrate, and the first surface and the second surface are opposite surfaces. In other embodiments, the first surface may be a back surface of the chip 211, and the second surface is a front surface of the chip 211.
The pickup 221 may be a bernoulli nozzle or a vacuum nozzle. The Bernoulli suction nozzle generates high-speed jet flow through the small hole by utilizing compressed air, the high-speed jet flow takes away surrounding gas, negative pressure is generated to adsorb the chip 211, and the Bernoulli suction nozzle adsorbs the chip 211 in a non-contact manner; the vacuum suction nozzle sucks the chip 211 by using a vacuum extractor, so that negative air pressure is generated in the vacuum suction nozzle to suck the chip 211, and the vacuum suction nozzle sucks the chip 211 in a contact manner. Therefore, when the first surface is the front surface of the chip 211, the pickup portion 221 is preferably a bernoulli nozzle, so as to avoid the pickup portion 221 contacting the front surface of the chip 211 when picking up the chip 211, and thus avoid the defects such as particle contamination on the front surface of the chip 211.
The transfer mechanism comprises a transfer part and a lower bonding head part 232, the lower bonding head part 232 is detachably arranged on the transfer part, the lower bonding head part 232 is used for adsorbing the reversed chip 211, and the transfer part is used for enabling the lower bonding head part 232 adsorbed with the chip 211 to move between the upper bonding head part 241 and the second bearing table 25 in the bonding mechanism.
Preferably, the transfer part includes at least one spoke 231, the lower bond head part 232 is detachably disposed at two ends of each spoke 231, and the spokes 231 can rotate in a horizontal plane or a vertical plane to rotate the lower bond head part 232 with the chip 211 adsorbed thereon to a position between the upper bond head part 241 and the second carrier 25 in the bonding mechanism. It should be noted that, in other embodiments, the conveying unit may also be a guide rail (not shown), and the lower bond head portion 232 moves on the guide rail, so that the lower bond head portion 232 absorbed with the chip 211 moves between the upper bond head portion 241 and the second carrier 25. Whichever way the lower bond head 232 absorbed with the chip 211 is moved between the upper bond head 241 and the second carrier 25 in the bonding mechanism, the lower bond head 232 may be moved to adjust the relative relationship between the lower bond head 232 and the upper bond head 241 before the lower bond head 232 contacts the subsequent upper bond head 241.
Preferably, the lower bonding head 232 is a vacuum suction nozzle, and the lower bonding head 232 vacuum-adsorbs the chip 211, that is, the lower bonding head 232 contact-adsorbs the chip 211, so that when the subsequent chip 211 is bonded to the wafer 251, a downward force applied by the upper bonding head 241 can be applied to the chip 211 through the lower bonding head 232, and further, the bonding can be smoothly completed. In other embodiments, the lower bond head portion 232 may also be a bernoulli nozzle.
If the lower bond head portion 232 is attached to the chip 211 in a contact manner, the first surface is preferably a front surface of the chip 211, and the second surface is preferably a back surface of the chip 211, so that the lower bond head portion 232 is in contact with the back surface of the chip 211, and defects such as particle contamination on the front surface of the chip 211 caused by the contact between the lower bond head portion 232 and the front surface of the chip 211 are avoided.
And, when the transfer part includes at least one spoke 231, the transfer part may further include a driving shaft 233 and a fixing ring 234, both ends of the spoke 231 are connected with the fixing ring 234, and the spoke 231 passes through the center of the fixing ring 234, the fixing ring 234 serves to stabilize the spoke 231 against deformation of the spoke 231; the driving shaft 233 is vertically disposed at the center of the spoke 231 to drive the spoke 231 to rotate in a horizontal plane or a vertical plane.
And, when the transfer part includes at least one spoke 231, in order to improve efficiency, the transfer part may include at least two spokes 231 distributed along a radial direction of the fixing ring 234, at this time, centers of all the spokes 231 intersect and are connected, and centers of all the spokes 231 intersect with the driving shaft 233, so that the driving shaft 233 drives all the spokes 231 to rotate on a horizontal plane or a vertical plane, thereby rotating all the lower bond head portions 232, so as to continuously replace the lower bond head portions 232 for sucking the chip 211 from the pick-up part 221 and the lower bond head portions 232 for connecting with the upper bond head portions 241.
And, the bond head lower part 232 and the transfer part may be vacuum-sucked or magnetically sucked therebetween, so that the bond head lower part 232 may be detachably disposed on the transfer part. One or two of the bonding head lower part 232 and the transfer part may have a component (e.g., a vacuum line, a suction cup, etc.) for vacuum suction therebetween and a component (e.g., an electromagnet, etc.) for magnetic suction therebetween.
The bonding mechanism is vertically movably disposed above the second carrier 25, and a bond head upper portion 241 of the bonding mechanism is configured to be detachably connected to the bond head lower portion 232.
The bond head upper portion 241 and the bond head lower portion 232 may be vacuum-sucked or magnetically sucked to detachably connect the bond head upper portion 241 and the bond head lower portion 232. One or both of the bond head upper part 241 and the bond head lower part 232 may have a component (e.g., a vacuum line, a suction cup, etc.) for vacuum suction therebetween and a component (e.g., an electromagnet, etc.) for magnetic suction therebetween.
After the bonding head lower part 232 absorbed with the chip 211 is moved between the bonding head upper part 241 and the second stage 25, the step of bonding the chip 211 on the wafer 251 located on the second stage 25 includes: firstly, vertically moving the upper bonding head part 241 downwards until the upper bonding head part 241 is contacted with the lower bonding head part 232 and then connected, and separating the lower bonding head part 232 from the conveying part after connection; then, the upper bonding head 241 drives the lower bonding head 232 absorbed with the chip 211 to move downward along the vertical direction, until the chip 211 contacts the wafer 251, and then downward force is applied to bond the chip 211 to the wafer 251.
After the chip 211 is bonded to the wafer 251, the upper bond head 241 drives the lower bond head 232 to move in a direction away from the wafer 251, the lower bond head 232 is connected to the transfer portion after contacting, and after the connection, the upper bond head 241 is separated from the lower bond head 232; then, the transfer part removes the lower bond head portion 232 located between the upper bond head portion 241 and the second carrier 25, so that the lower bond head portion 232 continues to suck the flipped chip 211 from the pick-up mechanism. If the transfer portion includes at least two spokes 231, after the upper bond head portion 241 is separated from the lower bond head portion 232, each of the spokes 231 rotates in a horizontal plane or a vertical plane to drive the lower bond head portion 232 located between the upper bond head portion 241 and the second carrier table 25 to move away, and the other lower bond head portion 232 absorbed with the chip 211 is rotated to a position between the upper bond head portion 241 and the second carrier table 25, so as to continue to perform the step of bonding the chip 211 to the wafer 251, thereby significantly improving the efficiency.
And, in the process of replacing the lower bonding head portion 232 between the upper bonding head portion 241 and the second carrier 25, the second carrier 25 is also moved in the horizontal direction to move the next position to be bonded on the wafer 251 to a position aligned with the replaced chip 211. Therefore, the bonding of all the chips 211 to the wafer 251 can be sequentially achieved by the horizontal movement of the second stage 25, the transfer of the transfer portion, and the vertical movement of the upper portion 241 of the bond head.
And, when the transfer part includes at least one spoke 231, of the two lower bond head portions 232 located at both ends of the same spoke 231, when one of the lower bond head portions 232 is located between the upper bond head portion 241 and the second carrier table 25, the other lower bond head portion 232 is located just above the pick-up portion 221 with the pick-up face upward. Therefore, the two lower bond head portions 232 at the two ends of the same spoke 231 need to be aligned with the pick-up portion 221 absorbed with the chip 211 and the upper bond head portion 241 respectively, so as to ensure that the two lower bond head portions 232 stop within an acceptable range each time; and if the time required for picking up and flipping the chip 211 from the picking mechanism to the one of the lower bond head portions 232 to absorb the chip 211 is a first time and the time required for bonding the chip 211 on the other lower bond head portion 232 and the wafer 251 from the upper bond head portion 241 to the other lower bond head portion 232 is a second time, then by reducing the difference between the first time and the second time, no waiting time can be caused in the whole process to achieve the optimal efficiency.
And, the larger the number of the spokes 231, the less time is required to replace the lower bond head portion 232 between the upper bond head portion 241 and the second carrier 25, for example, the number of the spokes 231 may be less than 100,
in addition, if the first surface is the front surface of the chip 211 and the second surface is the back surface of the chip 211, the front surface of the chip 211 is bonded to the wafer 251; if the first surface is the back surface of the chip 211 and the second surface is the front surface of the chip 211, the back surface of the chip 211 is bonded to the wafer 251.
In addition, in order to make the bonding position of the chip 211 on the wafer 251 more accurate, the moving precision of the second stage 25 is greater than that of the first stage 21, and the second stage 25 is a high-precision stage, so that the bonding precision of the chip 211 and the wafer 251 reaches the nanometer level.
Further, a robot arm may be used to place the wafer 251 on the second susceptor 25.
Also, preferably, a second alignment system 242 is integrated on the upper portion 241 of the bond head, and the robot is in signal connection with the second alignment system 242; before the wafer 251 is placed on the second stage 25 by the robot arm, the second alignment system 242 is used to identify the alignment mark on the second stage 25, so that the wafer 251 is aligned with the second stage 25, and the wafer 251 can be accurately placed on the second stage 25 at the set position.
Also, preferably, the second alignment system 242 is used to identify the alignment mark on the second carrier 25, so that the bond head upper portion 241 is aligned with the second carrier 25.
Since the wafer 251 is aligned with the second carrying table 25 and the upper bond head portion 241 is aligned with the second carrying table 25, the wafer 251 is aligned with the upper bond head portion 241, and misalignment between the upper bond head portion 241 and the wafer 251 is avoided.
In addition, since the position of the chip 211 on the bottom surface of the lower bonding head 232 is not fixed each time the lower bonding head 232 sucks the chip 211 from the pick-up part 221, and the position of the lower bonding head 232 sucked on the upper bonding head 241 is not fixed each time, the transportation of the lower bonding head 232 by the transport part may also cause the deviation of the position of the lower bonding head 232, after the upper bonding head 241 and the lower bonding head 232 are connected, the chip 211 is aligned with the wafer 251 by the horizontal movement of the second carrier table 25, specifically, the horizontal distance between the chip 211 sucked by the lower bonding head 232 and the fixed reference point on the upper bonding head 241 may be identified by the second alignment system 242 to compensate the deviation between the chip 211 and the wafer 251 when the chip 211 is bonded on the wafer 251, so that the accuracy of the bonding position of the chip 211 on the wafer 251 is improved.
Wherein, the method for identifying the horizontal distance between the chip 211 adsorbed by the lower bond head 232 and the fixed reference point on the upper bond head 241 includes but is not limited to: scale marks are arranged on the bottom surface of the lower portion 232 of the bond head, at least one reflector (not shown) is arranged on the periphery of the second carrying table 25, and the reflector is used to reflect the scale mark information corresponding to the bottom surface of the lower portion 232 of the bond head on the chip 211 to the second alignment system 242, so as to confirm the horizontal distance between the chip 211 and the fixed reference point according to the scale mark information.
Also, since the upper bond head 241 is aligned with the wafer 251, the fixed reference point is aligned with the wafer 251, and thus, the fixed reference point may be any position on the upper bond head 241.
The second carrier 25 and the upper bond head portion 241 are both movable in a horizontal direction and a vertical direction. Preferably, in the process of aligning the wafer 251 and the upper bond head portion 241 and aligning the chip 211 and the wafer 251, the displacement of the upper bond head portion 241 in the horizontal direction is 0, the displacement of the second carrier table 25 in the vertical direction is 0, and the process is realized only by moving the second carrier table 25 in the horizontal direction.
Therefore, in the present invention, on the basis that the transfer portion is detachably connected to the lower bond head portion 232 and the upper bond head portion 241 is detachably connected to the lower bond head portion 232, the chip 211 is aligned with the wafer 251 by moving the second carrier table 25 in the horizontal direction and the chip 211 is bonded to the wafer 251 by moving the upper bond head portion 241 in the vertical direction, so that the horizontal deviation caused by the inertia of the horizontal movement of the upper bond head portion 241 can be avoided, and the alignment deviation between the chip 211 and the wafer 251 can be reduced.
Also, preferably, the resolution of the second alignment system 242 is greater than the resolution of the first alignment system 223, and the second alignment system 242 has a high power lens. Although the high-power definition lens has a large volume and a large weight, the chip 211 is aligned with the wafer 251 by moving the second carrying table 25 in the horizontal direction, and the bond head upper portion 241 has a horizontal displacement of 0, so that the alignment accuracy can be prevented from being affected by the integrated high-power definition lens, and the alignment accuracy between the chip 211 and the position to be bonded on the wafer 251 can be prevented from being reduced.
In addition, preferably, after the bond head upper part 241 is connected with the bond head lower part 232, it is also possible to establish a coordinate system with the center of circle of the wafer 251 as the origin, identify a plurality of alignment marks on the wafer 251 by using the second alignment system 242, read the actual positions of the alignment marks on the wafer 251 and the theoretical positions in the coordinate system, and calculate the deviation between the actual positions and the theoretical positions, then, the deviation between each actual to-be-bonded position on the wafer 251 and each corresponding theoretical to-be-bonded position in the coordinate system is fitted according to the deviation, to compensate for deviations between the die 211 and the actual to-be-bonded position on the wafer 251 when bonding the die 211 to the wafer 251, further, the accuracy of the bonding position of the chip 211 on the wafer 251 is further improved.
Wherein, the deviation between the actual position and the theoretical position comprises: a shift deviation in the horizontal direction (i.e., the X direction and the Y direction), a rotation deviation, and the like.
In summary, the bonding apparatus provided by the present invention includes a picking mechanism, a transferring mechanism and a bonding mechanism, the picking mechanism includes a picking portion and a flipping portion, the transferring mechanism includes a transferring portion and a lower portion of a bonding head, the bonding mechanism includes an upper portion of the bonding head, the picking portion picks up a first to-be-bonded body from a first carrier, the flipping portion flips the first to-be-bonded body from a first surface to a second surface, the lower portion of the bonding head adsorbs the flipped first to-be-bonded body, the transferring portion moves the lower portion of the bonding head adsorbed with the first to-be-bonded body to the upper portion of the bonding head and the second carrier, and after the upper portion of the bonding head is connected to the lower portion of the bonding head, the second carrier moves horizontally to align the first to-be-bonded body with a second to-be-bonded body on the second carrier, and the upper part of the bonding head drives the lower part of the bonding head adsorbed with the first body to be bonded to move vertically so as to bond the first body to be bonded to the second body to be bonded. The lower part of the bonding head for adsorbing and overturning the first body to be bonded is detachably connected with the upper part of the bonding head, the first body to be bonded is aligned with the second body to be bonded through the horizontal movement of the second bearing table, and the horizontal upward displacement of the upper part of the bonding head is 0, so that a high-power clear lens with larger volume and weight can be integrated on the upper part of the bonding head, the upper part of the bonding head is not influenced, and the alignment precision of the first body to be bonded and the second body to be bonded is improved (for example, the alignment precision of a chip and a wafer can reach within 200 nm).
Further, before the first body to be bonded is bonded to the second body to be bonded each time, the second alignment system integrated on the upper portion of the bond head is only required to be used for identifying the horizontal distance between the first body to be bonded adsorbed on the lower portion of the bond head and a fixed reference point on the upper portion of the bond head, and the relative position between the first body to be bonded and the second body to be bonded is not required to be identified each time. The second alignment system only needs to identify a position point of the first body to be bonded on the bottom surface of the lower part of the bonding head and calculate the horizontal distance between the position point and a fixed reference point, so that the speed is high; in the latter case, a plurality of position points need to be identified on both the first to-be-bonded body and the second to-be-bonded body, and the plurality of position points are analyzed and calculated, which results in a very slow speed, so that the method of the present invention reduces the time for aligning the first to-be-bonded body and the second to-be-bonded body, and enables the bonding efficiency to be greatly improved (for example, the yield of a die-bonded wafer is improved from less than 1000 chips per hour to more than 2000 chips) while ensuring the alignment of the first to-be-bonded body and the second to-be-bonded body.
An embodiment of the present invention provides a bonding method, in which a first to-be-bonded body is bonded to a second to-be-bonded body by using the bonding apparatus, which is referred to above and is not described herein again. Referring to fig. 5, fig. 5 is a flow chart of a bonding method according to an embodiment of the present invention, and as can be seen from fig. 5, the bonding method includes:
step S1, picking up the first body to be bonded from the first carrier by using the pick-up portion;
step S2, flipping the first to-be-bonded body picked up from a first face to a second face upward using the flipping portion;
step S3, absorbing the turned first body to be bonded by the lower part of the bonding head;
step S4, moving the lower part of the bond head, to which the first body to be bonded is adsorbed, to a position between the upper part of the bond head and the second carrier by using the transfer part;
step S5, moving the upper portion of the bond head in a vertical direction so that the lower portion of the bond head is separated from the transfer portion after the upper portion of the bond head is connected to the lower portion of the bond head, and moving the second carrier in a horizontal direction so that the first to-be-bonded body is aligned with the second to-be-bonded body, where the upper portion of the bond head drives the lower portion of the bond head, to which the first to-be-bonded body is adsorbed, to move in the vertical direction so as to bond the first to-be-bonded body to the second to-be-bonded body.
The bonding method provided in this embodiment will be described in more detail with reference to fig. 1 to 4.
The bonding method can bond chips to wafers, wafers or chips, or can bond other types of chips to each other (for example, chip to glass bonding), without limitation.
Preferably, in the bonding method, a chip is bonded on a wafer, the chip is located on a first bearing table, and the wafer is located on a second bearing table, that is, the first body to be bonded is the chip, and the second body to be bonded is the wafer.
The bonding method will be described below by taking as an example the bonding of the chip 211 on the first stage 21 to the wafer 251 on the second stage 25.
In step S1, the chip 211 is picked up from the first stage 21 by the pickup unit 221.
Before picking up the chip 211 from the first stage 21 using the pick-up part 221, the bonding method further includes: the first alignment system 223 integrated on the pick-up mechanism is used to identify the alignment mark on the first carrier table 21, so that the chip 211 and the pick-up mechanism are aligned with the first carrier table 21, respectively.
A plurality of chips 211 obtained by cutting a wafer (not shown) may be placed on a blue film (not shown), and the blue film on which the plurality of chips 211 are placed may be placed and fixed on the first stage 21 by a robot arm (not shown). The robotic arm is in signal communication with the first alignment system 223; before a blue film with a plurality of chips 211 is placed on the first carrier table 21 by using a mechanical arm, the first alignment system 223 is used to identify the alignment mark on the first carrier table 21, so that the blue film and the chips 211 can be aligned with the first carrier table 21, and the blue film can be accurately placed at a set position on the first carrier table 21. Moreover, since the position coordinates of each chip 211 on the blue film are known after a wafer is diced, after the blue film is placed on the first stage 21, each chip 211 is also located on the corresponding set position on the first stage 21, that is, the position of each chip 211 on the first stage 21 is also known.
Since the chip 211 is aligned with the first stage 21 and the pickup mechanism is aligned with the first stage 21, the chip 211 is aligned with the pickup mechanism, so that the pickup part 221 can accurately pick up each chip 211 on the blue film.
The first carrier 21 and the pick-up mechanism are both capable of moving horizontally and vertically. Preferably, in the process of aligning the chip 211 with the first carrying stage 21 and aligning the picking mechanism with the first carrying stage 21, the horizontal displacement of the picking mechanism is 0, the vertical displacement of the first carrying stage 21 is 0, and the alignment of the chip 211 with the picking mechanism is realized only by the horizontal movement of the first carrying stage 21.
The step of picking up the chip 211 from the first stage 21 using the pick-up part 221 may include: first, the first stage 21 is horizontally moved to align the chip 211 to be picked up with the pickup part 221 facing downward; then, the pickup mechanism is moved down in the vertical direction so that the pickup portion 221 picks up the chip 211; the pickup is then moved vertically upward.
The picked chip 211 is turned from the first face up to the second face up using the turning section 222 as by step S2.
The method comprises the following steps: firstly, the turning part 222 drives the picking part 221 which picks up the chip 211 to rotate on a vertical plane, so that the picked-up chip 211 is turned from a first plane to a second plane upwards; then, the flipping part 222 rotates in a horizontal plane to bring the pick-up part 221 picked up with the chip 211 to rotate to a position subsequently opposite to the lower part 232 of the bond head. After the above steps, the flipping unit 222 continues to rotate in the vertical plane to flip the pick-up unit 221 with the pick-up surface upward (at this time, the chip 211 on the pick-up unit 221 with the pick-up surface upward is picked up by the subsequent lower portion 232 of the bond head) to the pick-up surface downward, and rotates the pick-up surface to the position where the picked-up chip 211 is located on the first carrier table 21, so that after the first carrier table 21 moves the chip 211 to be picked up subsequently to this position by the horizontal movement, the above steps are repeated until the pick-up of all the chips 211 on the first carrier table 21 is completed.
The first surface may be a front surface of the chip 211, the second surface may be a back surface of the chip 211, various device structures may be formed on the front surface of the chip 211, the back surface of the chip 211 may be a substrate, and the first surface and the second surface may be opposite surfaces. In other embodiments, the first surface may be a back surface of the chip 211, and the second surface is a front surface of the chip 211.
The pickup unit 221 may be a bernoulli nozzle that performs suction to the chip 211 in a non-contact manner or a vacuum nozzle that performs suction to the chip 211 in a contact manner. Therefore, when the first surface is the front surface of the chip 211, the pickup portion 221 is preferably a bernoulli nozzle, so as to avoid the pickup portion 221 contacting the front surface of the chip 211 when picking up the chip 211, and thus avoid the defects such as particle contamination on the front surface of the chip 211.
According to step S3, the flipped chip 211 is adsorbed by the lower bond head 232.
Preferably, the lower bonding head 232 is a vacuum suction nozzle, and the lower bonding head 232 vacuum-adsorbs the chip 211, that is, the lower bonding head 232 contact-adsorbs the chip 211, so that when the subsequent chip 211 is bonded to the wafer 251, a downward force applied by the upper bonding head 241 can be applied to the chip 211 through the lower bonding head 232, and further, the bonding can be smoothly completed. In other embodiments, the lower bond head portion 232 may also be a bernoulli nozzle.
If the lower bonding head 232 is attached to the chip 211 in a contact manner, the first surface is preferably a front surface of the chip 211, and the second surface is preferably a back surface of the chip 211, so that the lower bonding head 232 is in contact with the back surface of the chip 211, and defects such as particle contamination on the front surface of the chip 211 due to contact between the lower bonding head 232 and the front surface of the chip 211 are avoided.
The lower bond head 232 with the chip 211 adsorbed thereon is moved to between the upper bond head 241 and the second carrier 25 by using the transfer unit, as per step S4.
If the transfer part includes at least one spoke 231, the spoke 231 is rotated in a horizontal plane or a vertical plane to rotate the lower bond head portion 232 with the chip 211 adsorbed thereon to a position between the upper bond head portion 241 and the second carrier table 25.
If the transfer unit is a guide rail (not shown), the lower bond head 232 moves on the guide rail, so that the lower bond head 232, to which the chip 211 is attached, moves between the upper bond head 241 and the second stage 25.
When the transfer part includes at least one spoke 231, the transfer part may further include a driving shaft 233 and a fixing ring 234, both ends of the spoke 231 are connected with the fixing ring 234, and the spoke 231 passes through the center of the fixing ring 234, the fixing ring 234 serves to stabilize the spoke 231 against deformation of the spoke 231; the driving shaft 233 is vertically disposed at the center of the spoke 231 to drive the spoke 231 to rotate in a horizontal plane or a vertical plane.
And, when the transfer part includes at least one spoke 231, in order to improve efficiency, the transfer part may include at least two spokes 231 distributed along a radial direction of the fixing ring 234, at this time, centers of all the spokes 231 intersect and are connected, and centers of all the spokes 231 intersect with the driving shaft 233, so that the driving shaft 233 drives all the spokes 231 to rotate on a horizontal plane or a vertical plane, thereby rotating all the lower bond head portions 232, so as to continuously replace the lower bond head portions 232 for sucking the chip 211 from the pick-up part 221 and the lower bond head portions 232 for connecting with the upper bond head portions 241.
The lower bond head 232 may be attached to the transfer portion by vacuum or magnetic force, so that the lower bond head 232 may be detachably disposed on the transfer portion.
According to step S5, the upper bond head portion 241 is moved vertically so that the lower bond head portion 232 is separated from the transfer portion after the upper bond head portion 241 is connected to the lower bond head portion 232, and the chip 211 is aligned with the wafer 251 by the horizontal movement of the second carrier 25, and the upper bond head portion 241 drives the lower bond head portion 232 absorbed with the chip 211 to move vertically until the chip 211 contacts the wafer 251, and then continues to apply a downward force to bond the chip 211 to the wafer 251.
The bond head upper portion 241 and the bond head lower portion 232 may be vacuum-sucked or magnetically sucked to detachably connect the bond head upper portion 241 and the bond head lower portion 232.
After the chip 211 is bonded to the wafer 251, the upper bond head 241 drives the lower bond head 232 to move in a direction away from the wafer 251, the lower bond head 232 is connected to the transfer portion after contacting, and after the connection, the upper bond head 241 is separated from the lower bond head 232; then, the transfer part moves the lower bond head part 232 between the upper bond head part 241 and the second carrier 25, so that the lower bond head part 232 continues to suck the flipped chip 211 from the chip pick-up mechanism.
And, in the process of replacing the lower bonding head portion 232 between the upper bonding head portion 241 and the second carrier 25, the second carrier 25 is also moved in the horizontal direction to move the next position to be bonded on the wafer 251 to a position aligned with the replaced chip 211. Therefore, the bonding of all the chips 211 on the wafer 251 can be sequentially realized by the horizontal movement of the second stage 25, the transfer of the transfer portion, and the vertical movement of the upper portion 241 of the bonding head.
And, when the transfer part includes at least one spoke 231, of the two lower bond head portions 232 located at both ends of the same spoke 231, when one of the lower bond head portions 232 is located between the upper bond head portion 241 and the second carrier table 25, the other lower bond head portion 232 is located just above the pick-up portion 221 with the pick-up face upward.
In addition, in order to make the bonding position of the chip 211 on the wafer 251 more accurate, the moving precision of the second stage 25 is greater than that of the first stage 21, and the second stage 25 is a high-precision stage, so that the bonding precision of the chip 211 and the wafer 251 reaches the nanometer level.
Preferably, before moving the upper bond head portion 241 in the vertical direction, the bonding method further includes: and recognizing the alignment mark on the second carrying table 25 by using a second alignment system 242 integrated on the bonding head upper portion 241, so that the wafer 251 and the bonding head upper portion 241 are aligned with the second carrying table 25 respectively, and further the wafer 251 is aligned with the bonding head upper portion 241, thereby preventing the alignment deviation between the bonding head upper portion 241 and the wafer 251.
In addition, after the bond head upper portion 241 is connected with the bond head lower portion 232, the bonding method further includes: the chip 211 is aligned with the wafer 251 by the movement of the second carrying table 25 in the horizontal direction, and specifically, the horizontal distance between the chip 211 adsorbed by the lower bonding head 232 and a fixed reference point on the upper bonding head 241 is identified by the second alignment system 242, so as to compensate for the deviation between the chip 211 and the wafer 251 when the chip 211 is bonded on the wafer 251, so that the accuracy of the bonding position of the chip 211 on the wafer 251 is improved.
Wherein, the method for identifying the horizontal distance between the chip 211 adsorbed by the lower bond head 232 and the fixed reference point on the upper bond head 241 includes but is not limited to: scale marks are arranged on the bottom surface of the lower portion 232 of the bond head, at least one reflector (not shown) is arranged on the periphery of the second carrying table 25, and the reflector is used to reflect the scale mark information corresponding to the position, on the bottom surface of the lower portion 232 of the bond head, of the chip 211 to the second alignment system 242, so as to confirm the horizontal distance between the chip 211 and the fixed reference point according to the scale mark information.
Also, since the upper bond head 241 is aligned with the wafer 251, the fixed reference point is aligned with the wafer 251, and thus, the fixed reference point may be any position on the upper bond head 241.
The second carrier 25 and the upper bond head portion 241 are both movable in a horizontal direction and a vertical direction. Preferably, in the process of aligning the wafer 251 and the upper bond head portion 241 and aligning the chip 211 and the wafer 251, the displacement of the upper bond head portion 241 in the horizontal direction is 0, the displacement of the second carrier table 25 in the vertical direction is 0, and the process is realized only by moving the second carrier table 25 in the horizontal direction.
Therefore, in the present invention, on the basis that the transfer portion is detachably connected to the lower bond head portion 232 and the upper bond head portion 241 is detachably connected to the lower bond head portion 232, the chip 211 is aligned with the wafer 251 by moving the second carrier table 25 in the horizontal direction and the chip 211 is bonded to the wafer 251 by moving the upper bond head portion 241 in the vertical direction, so that the horizontal deviation caused by the inertia of the horizontal movement of the upper bond head portion 241 can be avoided, and the alignment deviation between the chip 211 and the wafer 251 can be reduced.
Also, preferably, the resolution of the second alignment system 242 is greater than the resolution of the first alignment system 223, and the second alignment system 242 has a high power lens. Although the high-power definition lens has a large volume and a large weight, the chip 211 is aligned with the wafer 251 by moving the second carrying table 25 in the horizontal direction, and the bond head upper portion 241 has a horizontal displacement of 0, so that the alignment accuracy can be prevented from being affected by the integrated high-power definition lens, and the alignment accuracy between the chip 211 and the position to be bonded on the wafer 251 can be prevented from being reduced.
In addition, preferably, after the upper bond head 241 is connected with the lower bond head 232, the bonding method may further include: firstly, establishing a coordinate system by taking the circle center of the wafer 251 as an origin; then, the second alignment system 242 is used to identify a plurality of alignment marks on the wafer 251, read actual positions of the alignment marks on the wafer 251 and theoretical positions in the coordinate system, calculate deviations between the actual positions and the theoretical positions, and then fit deviations between actual positions to be bonded on the wafer 251 and corresponding theoretical positions to be bonded in the coordinate system according to the deviations, so as to compensate deviations between the chip 211 and the actual positions to be bonded on the wafer 251 when the chip 211 is bonded on the wafer 251, thereby further improving the accuracy of the bonding position of the chip 211 on the wafer 251.
Wherein, the deviation between the actual position and the theoretical position comprises: a shift deviation in the horizontal direction (i.e., the X direction and the Y direction), a rotation deviation, and the like.
In summary, the bonding method provided by the present invention employs the bonding apparatus to bond the first body to be bonded to the second body to be bonded, and specifically includes: picking up the first body to be bonded from the first bearing table by using the picking part; the picked first body to be bonded is turned from the first surface to the second surface upwards by the turning part; adopting the lower part of the bonding head to adsorb the turned first body to be bonded; moving the lower part of the bonding head, which is adsorbed with the first body to be bonded, to a position between the upper part of the bonding head and the second bearing table by using the conveying part; and moving the upper part of the bonding head vertically to enable the lower part of the bonding head to be separated from the transmission part after the upper part of the bonding head is connected with the lower part of the bonding head, enabling the first body to be bonded to be aligned with the second body to be bonded through the horizontal movement of the second bearing table, and driving the lower part of the bonding head, which adsorbs the first body to be bonded, to move vertically to bond the first body to be bonded to the second body to be bonded. The lower part of the bonding head used for adsorbing and overturning the first body to be bonded is detachably connected with the upper part of the bonding head, the first body to be bonded is aligned with the second body to be bonded through the horizontal movement of the second bearing table, and the displacement of the upper part of the bonding head in the horizontal direction is 0, so that the upper part of the bonding head is not influenced while a high-power clear lens with larger volume and weight can be integrated, and the alignment precision of the first body to be bonded and the second body to be bonded is improved (for example, the alignment precision of a chip and a wafer can reach within 200 nm).
Further, before the first body to be bonded is bonded to the second body to be bonded each time, the second alignment system integrated on the upper portion of the bond head is only required to be used for identifying the horizontal distance between the first body to be bonded adsorbed on the lower portion of the bond head and a fixed reference point on the upper portion of the bond head, and the relative position between the first body to be bonded and the second body to be bonded is not required to be identified each time. The second alignment system only needs to identify a position point of the first body to be bonded on the bottom surface of the lower part of the bonding head and calculate the horizontal distance between the position point and a fixed reference point, so that the speed is high; the latter needs to identify a plurality of position points on both the first to-be-bonded body and the second to-be-bonded body, and analyze and calculate the plurality of position points, resulting in a very slow speed, so the method of the present invention reduces the time for aligning the first to-be-bonded body and the second to-be-bonded body, and enables the bonding efficiency to be greatly improved (for example, the yield of a chip bonding wafer is improved from less than 1000 chips per hour to more than 2000 chips) while ensuring the alignment of the first to-be-bonded body and the second to-be-bonded body.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.

Claims (13)

1. A bonding apparatus including a first stage and a second stage which are horizontally movable, the bonding apparatus comprising:
the picking mechanism is vertically movably arranged above the first bearing table and comprises a picking part and a turning part, the picking part is arranged at two ends of the turning part and used for picking a first body to be bonded from the first bearing table, and the turning part is used for turning the picked first body to be bonded from a first surface to a second surface;
the conveying mechanism comprises a conveying part and a lower part of a bonding head, and the lower part of the bonding head is detachably arranged on the conveying part and used for adsorbing the overturned first body to be bonded;
the bonding mechanism is vertically movably arranged above the second bearing table and comprises a bonding head upper part and a bonding head lower part, wherein the bonding head upper part is detachably connected with the bonding head lower part; the conveying part is used for enabling the lower part of the bonding head adsorbed with the first body to be bonded to move to a position between the upper part of the bonding head and the second bearing table, and further enabling the first body to be bonded to be aligned with a second body to be bonded on the second bearing table through the horizontal movement of the second bearing table after the upper part of the bonding head is connected with the lower part of the bonding head, and the upper part of the bonding head drives the lower part of the bonding head adsorbed with the first body to be bonded to move vertically so as to bond the first body to be bonded on the second body to be bonded.
2. The bonding apparatus of claim 1, wherein the upper portion of the bond head is displaced by 0 in a horizontal direction and the second carrier is displaced by 0 in a vertical direction.
3. The bonding apparatus of claim 1, wherein a second alignment system is integrated on the upper bond head for identifying a horizontal distance between the first body to be bonded adsorbed by the lower bond head and a fixed reference point on the upper bond head after the upper bond head is connected to the lower bond head to compensate for a deviation between the first body to be bonded and the second body to be bonded when the first body to be bonded is bonded to the second body to be bonded.
4. The bonding apparatus of claim 3, wherein the picking mechanism has a first alignment system integrated thereon for aligning the first body to be bonded and the picking mechanism by moving the first carrier in a horizontal direction.
5. The bonding apparatus of claim 4, wherein the resolution of the second alignment system is greater than the resolution of the first alignment system.
6. The bonding apparatus of claim 1, wherein the second stage moves with a greater precision than the first stage.
7. The bonding apparatus of claim 1, wherein the first surface is a front surface of the first body to be bonded, and the second surface is a back surface of the first body to be bonded.
8. The bonding apparatus of claim 1, wherein the pick and/or the lower bond head portion is a bernoulli nozzle or a vacuum nozzle.
9. The bonding apparatus of claim 1, wherein the lower portion of the bond head is vacuum-or magnetically attracted to the transport portion such that the lower portion of the bond head is detachably disposed on the transport portion; and/or vacuum adsorption or magnetic adsorption is carried out between the upper bonding head part and the lower bonding head part, so that the upper bonding head part and the lower bonding head part are detachably connected.
10. A bonding method for bonding a first body to be bonded to a second body to be bonded by using the bonding apparatus according to any one of claims 1 to 9, the bonding method comprising:
picking up the first body to be bonded from the first bearing table by using the picking part;
the picked first body to be bonded is turned from the first surface to the second surface upwards by the turning part;
adsorbing the turned first body to be bonded by adopting the lower part of the bonding head;
moving the lower part of the bonding head, which is adsorbed with the first body to be bonded, to a position between the upper part of the bonding head and the second bearing table by using the conveying part;
and moving the upper part of the bonding head vertically to enable the lower part of the bonding head to be separated from the conveying part after the upper part of the bonding head is connected with the lower part of the bonding head, enabling the first body to be bonded to be aligned with the second body to be bonded through the horizontal movement of the second bearing table, and driving the lower part of the bonding head, which adsorbs the first body to be bonded, to move vertically to bond the first body to be bonded to the second body to be bonded.
11. The bonding method of claim 10, wherein after the upper bond head is connected to the lower bond head, the bonding method further comprises:
and identifying a horizontal distance between the first body to be bonded adsorbed at the lower part of the bonding head and a fixed reference point on the upper part of the bonding head by adopting a second alignment system integrated at the upper part of the bonding head so as to compensate the deviation between the first body to be bonded and the second body to be bonded when the first body to be bonded is bonded on the second body to be bonded.
12. The bonding method of claim 11, wherein after the upper bond head portion is connected to the lower bond head portion, the bonding method further comprises:
establishing a coordinate system by taking the circle center of the second body to be bonded as an origin;
and recognizing an alignment mark on the second body to be bonded by adopting the second alignment system, and calculating a deviation between an actual position to be bonded on the second body to be bonded and a theoretical position to be bonded in the coordinate system so as to compensate the deviation between the actual position to be bonded on the first body to be bonded and the actual position to be bonded on the second body to be bonded when the first body to be bonded is bonded on the second body to be bonded.
13. The bonding method of claim 10, wherein after the first body to be bonded is bonded to the second body to be bonded, the upper bonding head portion moves the lower bonding head portion in a vertical direction away from the second body to be bonded, and after the lower bonding head portion is connected to the transfer portion, the upper bonding head portion is separated from the lower bonding head portion.
CN202210726733.8A 2022-06-23 2022-06-23 Bonding apparatus and bonding method Pending CN114999984A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116313838A (en) * 2023-03-07 2023-06-23 天津中科晶禾电子科技有限责任公司 Three-dimensional packaging method and three-dimensional packaging device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116313838A (en) * 2023-03-07 2023-06-23 天津中科晶禾电子科技有限责任公司 Three-dimensional packaging method and three-dimensional packaging device
CN116313838B (en) * 2023-03-07 2023-07-28 天津中科晶禾电子科技有限责任公司 Three-dimensional packaging method and three-dimensional packaging device

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