CN114994832A - Waveguide and optical quantum integrated chip comprising same - Google Patents

Waveguide and optical quantum integrated chip comprising same Download PDF

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Publication number
CN114994832A
CN114994832A CN202210493259.9A CN202210493259A CN114994832A CN 114994832 A CN114994832 A CN 114994832A CN 202210493259 A CN202210493259 A CN 202210493259A CN 114994832 A CN114994832 A CN 114994832A
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China
Prior art keywords
waveguide
width
coupling
light
present application
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Chinese (zh)
Inventor
陈林
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Shanghai Turing Intelligent Computing Quantum Technology Co Ltd
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Shanghai Turing Intelligent Computing Quantum Technology Co Ltd
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Priority to CN202210493259.9A priority Critical patent/CN114994832A/en
Publication of CN114994832A publication Critical patent/CN114994832A/en
Priority to PCT/CN2023/092599 priority patent/WO2023217051A1/en
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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/26Optical coupling means
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12002Three-dimensional structures
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004Combinations of two or more optical elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4296Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133Functions
    • G02B2006/12147Coupler

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

The embodiment of the application relates to a waveguide and an optical quantum integrated chip comprising the same. According to some embodiments of the present application, a waveguide for coupling a first waveguide located above and a second waveguide located below enables light to be transmitted through the first waveguide to the second waveguide via evanescent coupling. Embodiments also provide an optical assembly comprising a first waveguide, a first surface of which comprises along a length of the first waveguide: a first region having a first width; a second region having a second width, wherein the second width is the first width; a second waveguide, wherein at least a portion of the second region of the first waveguide is coupled with the second waveguide such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling; and a third waveguide positioned between the first waveguide and the second waveguide such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling. The waveguide and the optical quantum integrated chip comprising the same can effectively solve the problems in the traditional technology.

Description

Waveguide and optical quantum integrated chip comprising same
Technical Field
The embodiments of the present application relate generally to the field of semiconductor technology, and more particularly, to a waveguide and an optical quantum integrated chip including the same.
Background
The miniaturization, low cost, and the like of optical chips require the integration of components such as light sources, optical paths, detectors, and the like, and the low-loss integration of active devices and passive devices is also required to reduce the chip energy consumption, improve the chip performance, and the like by reducing the coupling loss. For the coupling of a laser and a passive waveguide chip (based on silicon or lithium niobate, etc.), the following methods are adopted at present: the independent laser chip is emitted from the end face, the emitting end face of the independent laser chip is coupled with the end face of the optical fiber by using a certain spot conversion structure, and laser is transmitted to the end face of the other end of the optical fiber along the optical fiber to be emitted and then enters the passive waveguide on the chip through the vertical optical fiber coupler on the chip; the laser is directly emitted from the end face, light beams are focused into a small mode spot through a lens and then are directly coupled into a passive waveguide of the chip, the end face of the waveguide can be provided with an end face coupler to reduce alignment requirements and coupling loss, an optical isolator is usually required to be arranged between the laser and the chip to prevent light from reflecting to enter the laser, or a certain inclination angle is arranged on the end face of the waveguide to avoid the original return of light. In both of these approaches, the resulting coupling loss is still large (typically greater than 5dB) and the integration level is not high. At present, a scheme in research stage is heterogeneous growth of laser, so-called heterogenetic integration, which prepares laser by heterogeneous growth of materials such as III-V group on materials such as silicon or silicon dioxide, but the current technology is not mature due to problems such as lattice mismatch and thermal stress mismatch, the obtained laser power is generally lower (mW level), is obviously lower than that of lattice matched III-V laser (hundred mW level), and is not applicable to the condition of higher power requirement.
Therefore, the present application proposes a waveguide and a photonic quantum integrated chip including the same.
Disclosure of Invention
An objective of the present invention is to provide a waveguide and an optical quantum integrated chip including the same, which can significantly improve process efficiency and product yield, and reduce optical loss, compared to conventional methods and structures.
An embodiment of the present application provides a waveguide for coupling a first waveguide located above it and a second waveguide located below it, such that light can be transmitted through the first waveguide to the second waveguide via evanescent coupling.
According to some embodiments of the application, the waveguide comprises: a left end having an upper surface for coupling to a first waveguide; and a right end opposite the left end, at least a portion of a lower surface of the right end being coupled to the second waveguide.
According to some embodiments of the present application, wherein the thickness of the first portion of the left end of the waveguide increases along the length of the first waveguide.
According to some embodiments of the application, a second portion of the first portion adjacent to the left end has the same thickness.
According to some embodiments of the present application, the thickness of the right end decreases along the length of the first waveguide.
According to some embodiments of the application, the distance between the left end and the right end is close to zero.
According to some embodiments of the present application, the third waveguide has a high refractive index, e.g. an amorphous silicon waveguide.
Another embodiment of the present application provides an optical assembly, including: a first waveguide having a first surface comprising, along a length of the first waveguide: a first region having a first width; a second region having a second width, wherein the second width is greater than the first width; a second waveguide, wherein at least a portion of the second region of the first waveguide is coupled with the second waveguide such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling; and a third waveguide positioned between the first waveguide and the second waveguide such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling.
According to some embodiments of the present application, the first waveguide, the second waveguide, and the third waveguide are disposed in alignment across respective wide regions.
According to some embodiments of the present application, the first waveguide further comprises one or more sub-regions, wherein the width of the sub-region increases along the length direction of the waveguide.
According to some embodiments of the application, the third waveguide is the aforementioned waveguide.
Still another embodiment of the present application also provides a chip, such as an optical quantum integrated chip, including the waveguide described above.
Yet another embodiment of the present application further provides a device integration method, comprising: respectively preparing a first device and a second device, wherein the first device comprises a first waveguide, and the second device comprises a second waveguide; bonding the first device to the second device such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling; and fabricating a third waveguide over the second waveguide, wherein the third waveguide is the aforementioned waveguide.
Yet another embodiment of the present application further provides a method of optoelectronic hetero-integration comprising the method of claim 15.
Compared with the prior art, the waveguide and the laser comprising the waveguide are expected to replace a traditional structure, laser in the high-refractive-index laser is coupled to the waveguide made of the low-refractive-index material through evanescent wave coupling with small loss through alignment bonding of the wide waveguide and the use of the waveguide with the high refractive index, the product yield is improved, and the optical coupling loss is effectively reduced.
Drawings
Drawings necessary for describing embodiments of the present application or the prior art will be briefly described below in order to describe the embodiments of the present application. It is to be understood that the drawings in the following description are only some of the embodiments of the present application. It will be apparent to those skilled in the art that other embodiments of the drawings can be obtained from the structures illustrated in these drawings without the need for inventive work.
Fig. 1 is a schematic side view of a waveguide 20 according to some embodiments of the present application.
Fig. 2 is a schematic side view of a waveguide 20 according to other embodiments of the present application.
Fig. 3 is a schematic diagram of an optical assembly 10 according to some embodiments of the present application.
Fig. 4 and 5 are side schematic views of a fourth waveguide 500 according to further embodiments of the present application.
Fig. 6 and 7 are schematic diagrams of optical assemblies 10 according to further embodiments of the present application.
Detailed Description
In order to better understand the spirit of the embodiments of the present application, the following further description is given in conjunction with some preferred embodiments of the present application.
Embodiments of the present application will be described in detail below. Throughout the specification, the same or similar components and components having the same or similar functions are denoted by like reference numerals. The embodiments described herein with respect to the figures are illustrative in nature, are diagrammatic in nature, and are used to provide a basic understanding of the present application. The embodiments of the present application should not be construed as limiting the present application.
As used herein, the terms "substantially", "substantially" and "about" are used to describe and illustrate minor variations. When used in conjunction with an event or circumstance, the terms can refer to instances where the event or circumstance occurs precisely as well as instances where the event or circumstance occurs in close proximity. For example, when used in conjunction with numerical values, the term can refer to a range of variation that is less than or equal to ± 10% of the stated numerical value, such as less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%. For example, two numerical values are considered to be "substantially" identical if the difference between the two numerical values is less than or equal to ± 10% (e.g., less than or equal to ± 5%, less than or equal to ± 4%, less than or equal to ± 3%, less than or equal to ± 2%, less than or equal to ± 1%, less than or equal to ± 0.5%, less than or equal to ± 0.1%, or less than or equal to ± 0.05%) of the mean of the values.
In this specification, unless specified or limited otherwise, relative terms such as: the terms "vertical," "lateral," "upper," "lower," and derivatives thereof (e.g., "upper surface," etc.) should be construed to refer to the orientation as then described in the discussion or as shown in the drawings. These relative terms are for convenience of description only and do not require that the present application be constructed or operated in a particular orientation.
Additionally, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It is to be understood that such range format is used for convenience and brevity, and should be interpreted flexibly to include not only the numerical values explicitly recited as the limits of the range, but also to include all the individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly recited.
Also, for convenience of description, "first," "second," etc. may be used herein to distinguish one element or group of elements from another. "first," "second," and the like are not intended to describe corresponding components.
Fig. 1 is a schematic side view of a waveguide 20 according to some embodiments of the present application.
The present application proposes a waveguide 20 for coupling a first waveguide 100 located above it and a second waveguide 200 located below it, such that light can be transmitted through the first waveguide 100 to the second waveguide 200 via evanescent coupling. As shown in fig. 1, light may propagate in the first waveguide 100 along the length direction a, enter the waveguide 20 via evanescent coupling, and be transferred from the waveguide 20 to the second waveguide 200 via evanescent coupling, so that the light propagates in the second waveguide 200 along the length direction a.
FIG. 2 is a schematic side view of a waveguide 20 according to other embodiments of the present application.
In this embodiment, the waveguide 20 may include: a left end 25 having an upper surface for coupling to a first waveguide 100; and a right end 23 opposite the left end 25, and at least a portion of a lower surface of the right end 23 is coupled to the second waveguide 200. Wherein the thickness of the first part 21 of the left end 25 of the waveguide increases along the length of the first waveguide. Such that evanescent coupling transmission of light into the second waveguide 200 occurs as light enters the waveguide 20 from the surface of the first waveguide 100.
According to some embodiments of the present application, the second portion 22 of the first portion 21 adjacent the left end 25 may have the same thickness, with the thickness of the right end 23 decreasing along the length of the first waveguide.
According to other embodiments of the present application, the distance between the left end 25 and the right end 23 may approach zero, which may further reduce optical losses.
According to other embodiments of the present application, the waveguide 20 has a high refractive index, e.g., the waveguide 20 is an amorphous silicon waveguide. In this embodiment, the Vertical taper structure is fabricated without the need for electron beam lithography or high end uv lithography, which can significantly reduce equipment requirements and fabrication costs as compared to the fabrication of thin tips required by tapers of reduced width in the lateral direction.
Fig. 3 is a schematic diagram of an optical assembly 10 according to some embodiments of the present application.
The optical assembly 10 proposed in the present application may comprise a first waveguide 100, a first surface of which comprises along a length direction a of the first waveguide: a first region 101 having a first width; a second region 102 having a second width, wherein the second width is greater than the first width; a second waveguide 200, wherein at least a portion 108 of the second region 102 of the first waveguide 100 is coupled to the second waveguide such that light can be transmitted from the first waveguide to the second waveguide 200 via evanescent coupling; and a third waveguide 20 located between the first waveguide 100 and the second waveguide 200 such that light can be transmitted from the first waveguide 100 to the second waveguide 200 via evanescent coupling.
The first waveguide 100, the second waveguide 200, and the third waveguide 20 can be aligned and disposed through respective wide regions, such as the region 108 in fig. 3, so as to obtain a larger alignment tolerance in an actual process, which is beneficial to improving the product yield in an alignment integration process.
In the conventional end-face coupling method, a certain spot-size conversion structure is used to couple the emergent end face of the waveguide with a second waveguide, such as an optical fiber end face, laser is transmitted to the end face at the other end of the optical fiber along the optical fiber to be emergent, the final coupling loss is still very large (generally greater than 5dB), the integration level is not high, and the end face needs to be processed to a degree suitable for coupling. In comparison, the waveguide provided by the application realizes evanescent wave coupling between the waveguide and the waveguide positioned below the waveguide by designing the surface, reduces the difficulty of coupling alignment by designing the wide area of the waveguide surface, and improves the yield of products.
Shown above in fig. 3 is a first surface of waveguide 100 inverted to be a side view of optical component 10 shown below, and the first surface of waveguide 100 may also include a tapered width region, such as second region 102 to the right of first region 101, which may include tapered width region 103 and square region 108. The first surface of the first waveguide 100 is designed such that light passing through the surface can reduce optical coupling loss when entering the underlying waveguide. On the other hand, by designing wider regions, such as the square region 108 of the first waveguide 100 and the wide regions of the second waveguide 20 and the third waveguide 200, a larger alignment tolerance can be obtained in the actual process, which is beneficial to improving the product yield in the alignment integration process.
The first surface of the first waveguide 100 may further comprise one or more sub-regions 110 located to the right of the second region 102, wherein the width of the sub-region 104 decreases along the length direction a of the waveguide to produce an adiabatically graded structure, which may adiabatically decrease the width of the branch waveguide from the micrometer level to a small value, for example, the sub-region may decrease linearly with increasing length along the length direction of the waveguide, and the structure in which the waveguide width decreases or increases linearly with increasing length is referred to as a taper structure, for example, the sub-region between a and B in fig. 3 is a taper structure, and the sub-region 104 may also be referred to as a taper waveguide segment.
Fig. 4 and 5 are side schematic views of a fourth waveguide 500 according to further embodiments of the present application.
The fourth waveguide 500 includes: a core layer 520; and an upper cladding layer 530 located over the core layer 520, wherein an upper surface of the upper cladding layer 530 includes a stepped surface 540, the stepped surface 540 including, in a direction of light transmission: a first surface 541; a beveled surface 542; and a second surface 543, wherein the inclined surface 542 extends obliquely downward from the first surface 541 to the second surface 543;
as shown in fig. 5, the stepped surface 540 is used for light exiting from the fourth waveguide 500 to be able to be transmitted to the second waveguide 200 via the third waveguide 20 by evanescent coupling.
Fig. 6 and 7 are schematic diagrams of optical assemblies 10 according to further embodiments of the present application.
As shown in fig. 6, a first device, such as a laser 11, may include a fourth waveguide 500, a second device, such as a passive waveguide chip 12, may include a second waveguide 200, and the first device and the second device may be coupled by evanescent coupling between waveguides of a third waveguide 20, thereby achieving large tolerance, low loss optical coupling of the laser and the passive optical waveguide device. Specifically, a general end-emitting laser can be improved, a passive waveguide structure is left at the laser emitting end of the laser during chip preparation, the waveguide width is gradually increased to a certain level (such as tens of microns or even hundreds of microns) from the micron level at the laser resonant cavity through a taper structure, and the taper length needs more than a few millimeters (as long as the loss of the material is very small, the loss introduced by the adiabatic taper is almost negligible). The width of the waveguide behind the taper can be kept constant, and the length is determined by evanescent coupling, for example, several tens or hundreds of micrometers.
Fig. 6 shows a schematic structural diagram of an optical component 10 obtained by bonding and integrating a first device 11 and a second device 12, for example, the first device includes an InGaAsP laser prepared on an InP substrate, the laser may include a fourth waveguide 500, the second device may include a lithium niobate waveguide chip, and since the refractive index of lithium niobate is smaller than that of III-V material, and the laser is difficult to evanescently couple into lithium niobate from the III-V material waveguide, a third waveguide 20 with a slightly higher refractive index than that of III-V material such as InP is used, for example, an amorphous silicon vertical taper is used as a connecting waveguide, and the side surface of the amorphous silicon vertical taper waveguide may be set to a taper structure with adiabatic thickness, so that a very small coupling loss can be achieved. The fourth waveguide 500, i.e., the waveguide on the laser, may be bonded to the third waveguide 20 by direct bonding to two media, or by a thin layer of material such as BCB. Since the bond pad InP cladding needs to be very thin, which may be different from the cladding thickness required in the resonator to guarantee higher power, as shown in fig. 7, the laser loss introduced by the abrupt change in cladding thickness can be avoided by designing the vertical taper structure for the side of the InP upper cladding, i.e., by using the fourth waveguide 500.
Fig. 7 shows an optical assembly 10 according to other embodiments of the present application, in which a taper waveguide section of a DFB laser, for example, may be configured as a Semiconductor Optical Amplifier (SOA) to further increase optical power, and a structure similar to a conventional mopa (master oscillator power amplifier), such as a laser resonator and a metal electrode of the SOA section, may be formed, and in order to reduce laser loss, a vertical taper structure may be also disposed on a side surface of a SiO2 on a lithium niobate chip where cladding laser light is incident. The metal electrode of the laser close to the silicon substrate is connected with a circuit on the silicon chip in a melting mode of adding metal particles, and the metal electrode at the InP substrate is connected with the metal circuit on the silicon chip in a wire bonding mode.
In the above embodiments, the waveguide may be a strip waveguide or a ridge waveguide; lasers may also be implemented with other structures and include semiconductor lasers and even lasers of other materials fabricated on non-III-V substrates.
Further embodiments of the present application also provide a chip, such as an optical quantum integration chip, comprising the waveguide 20 described above, or the optical component described above. The bonding laser can reduce the loss of pump light and realize quantum light source with enough brightness with smaller total power.
Embodiments of the present application further provide a device integration method, for example, a method of optoelectronic heterogeneous integration, which includes: preparing a first device 11 and a second device 12 respectively, wherein the first device 11 comprises a first waveguide 100, and the second device 12 comprises a second waveguide 200; bonding the first device 11 to the second device 12 such that light can be transmitted from the first waveguide 100 to the second waveguide 200 via evanescent coupling; and a third waveguide 20 is fabricated over the second waveguide 200.
The device integration method can be used for integrating the independently prepared traditional mature laser and the passive waveguide device chip, the processes of the active device and the passive chip are generally different and are not compatible with each other, and the independent preparation can ensure high yield; the technology can be designed to obtain larger alignment tolerance, which is beneficial to improving the product yield in the alignment integration process; the designed connection structure can realize small coupling loss. From these several aspects, it is expected that the product cost of laser and passive chip integration can be significantly reduced, and the following coupling mode of laser and chip can be replaced: vertical grating coupler, end face coupling, and laser prepared by directly growing on the heterogeneous material substrate.
The integration method can be used for bonding and integrating the laser and the passive waveguide chips (lithium niobate, silicon nitride and other chips) which are respectively prepared, and can have smaller coupling loss and larger alignment tolerance and obviously improve the yield of products.
The technical content and technical features of the present application have been disclosed as above, however, one skilled in the art may make various substitutions and modifications based on the teaching and disclosure of the present application without departing from the spirit of the present application. Therefore, the protection scope of the present application should not be limited to the disclosure of the embodiments, but should include various alternatives and modifications without departing from the scope of the present application, which is covered by the claims of the present patent application.

Claims (16)

1. A waveguide for coupling a first waveguide located above it and a second waveguide located below it, such that light can be transmitted through the first waveguide to the second waveguide via evanescent coupling.
2. The waveguide of claim 1, comprising:
a left end having an upper surface for coupling to the first waveguide; and
a right end opposite the left end, and at least a portion of a lower surface of the right end coupled to the second waveguide.
3. The waveguide of claim 2, wherein a thickness of a first portion of the left end of the waveguide increases along a length of the first waveguide.
4. The waveguide of claim 3, wherein a second portion of the first portion adjacent the left end has the same thickness.
5. The waveguide of claim 2, wherein the right end has a thickness that decreases along the length of the first waveguide.
6. The waveguide of claim 2, wherein a distance between the left end and the right end is approximately zero.
7. The waveguide of claim 1, having a high refractive index.
8. The waveguide of claim 1, which is an amorphous silicon waveguide.
9. An optical assembly, comprising:
a first waveguide having a first surface comprising, along a length of the first waveguide:
a first region having a first width;
a second region having a second width, wherein the second width is greater than the first width;
a second waveguide, wherein at least a portion of the second region of the first waveguide is coupled with the second waveguide such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling; and
a third waveguide positioned between the first waveguide and the second waveguide such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling.
10. The optical assembly of claim 9, wherein the first, second, and third waveguides are disposed in alignment over respective wide regions.
11. The optical assembly of claim 9, wherein the first waveguide further comprises one or more sub-regions, wherein the width of the sub-regions increases along the length of the waveguide.
12. The optical assembly of claim 9, wherein the third waveguide is a waveguide according to any one of claims 1-8.
13. A chip comprising the waveguide of any one of claims 1-8.
14. An optical quantum integration chip comprising an optical assembly according to any one of claims 9 to 12.
15. A method of device integration, comprising:
preparing a first device and a second device respectively, wherein the first device comprises a first waveguide and the second device comprises a second waveguide;
bonding the first device to the second device such that light can be transmitted from the first waveguide to the second waveguide via evanescent coupling; and
fabricating a third waveguide over the second waveguide, wherein the third waveguide is a waveguide according to any of the preceding claims 1-8.
16. A method of optoelectronic heterointegration comprising the method of claim 15.
CN202210493259.9A 2022-05-07 2022-05-07 Waveguide and optical quantum integrated chip comprising same Pending CN114994832A (en)

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CN202210493259.9A CN114994832A (en) 2022-05-07 2022-05-07 Waveguide and optical quantum integrated chip comprising same
PCT/CN2023/092599 WO2023217051A1 (en) 2022-05-07 2023-05-06 Waveguide and optical assembly comprising same

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CN116106862A (en) * 2023-04-10 2023-05-12 深圳市速腾聚创科技有限公司 Optical chip, laser radar, automatic driving system and movable equipment
WO2023217051A1 (en) * 2022-05-07 2023-11-16 上海图灵智算量子科技有限公司 Waveguide and optical assembly comprising same

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CN106125195A (en) * 2015-05-05 2016-11-16 华为技术有限公司 Optical coupling mechanism
CN107942444A (en) * 2017-11-20 2018-04-20 中山大学 A kind of layer coupling device of three-dimensionally integrated photon chip
CN108020889A (en) * 2017-12-05 2018-05-11 青岛海信宽带多媒体技术有限公司 Optical waveguide coupler
CN112987173A (en) * 2021-04-22 2021-06-18 中国科学院半导体研究所 Multilayer coupling structure

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Publication number Priority date Publication date Assignee Title
WO2015011845A1 (en) * 2013-07-23 2015-01-29 独立行政法人産業技術総合研究所 Interlayer lightwave coupling device
CN106125195A (en) * 2015-05-05 2016-11-16 华为技术有限公司 Optical coupling mechanism
CN107942444A (en) * 2017-11-20 2018-04-20 中山大学 A kind of layer coupling device of three-dimensionally integrated photon chip
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Publication number Priority date Publication date Assignee Title
WO2023217051A1 (en) * 2022-05-07 2023-11-16 上海图灵智算量子科技有限公司 Waveguide and optical assembly comprising same
CN116106862A (en) * 2023-04-10 2023-05-12 深圳市速腾聚创科技有限公司 Optical chip, laser radar, automatic driving system and movable equipment
CN116106862B (en) * 2023-04-10 2023-08-04 深圳市速腾聚创科技有限公司 Optical chip, laser radar, automatic driving system and movable equipment

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