CN114985024A - Self-adaptive heat flow control chip and manufacturing method thereof - Google Patents
Self-adaptive heat flow control chip and manufacturing method thereof Download PDFInfo
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- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
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Abstract
The invention provides a self-adaptive heat flow control chip and a manufacturing method thereof, wherein the chip comprises an upper shell, a lower shell and a silicon chip substrate, wherein the upper shell and the lower shell are installed in a matching way to form a sealed fluid channel cavity, and the silicon chip substrate is packaged in the fluid channel cavity; the surface of the silicon chip substrate is provided with a rough hydrophilic area, V-shaped grooves distributed in an array mode are arranged in the rough hydrophilic area, the depth of the V-shaped grooves gradually changes, a wedge-shaped structure with the surface gradually narrowed or widened is formed between every two adjacent V-shaped grooves, and the V-shaped grooves and the wedge-shaped structure form a micro-channel with gradient wettability. The manufacturing method comprises the steps of material selection, laser etching, deionized water hydrophilic treatment, micro-channel processing by using a grinding wheel, upper and lower shell processing and assembly. The manufacturing method of the self-adaptive heat flow control chip simplifies the manufacturing process of the heat dissipation technology of the micro-fluidic chip, has the characteristic of forward high-efficiency heat transfer and heat dissipation circulation, and is beneficial to quickly manufacturing the heat dissipation micro-fluidic chip in a short time so as to meet the requirement of the market on the heat dissipation of the chip.
Description
Technical Field
The invention relates to the technical field of heat flow control microstructure chips, in particular to a self-adaptive heat flow control chip and a manufacturing method thereof.
Background
Because people increasingly demand the use of micro-fluidic chips, and most of the chips are cooled outside the structure, extra driving force needs to be set to drive the micro-fluid to flow and extra cooling systems need to be set, and in order to realize the characteristic of microminiaturization of the chip structure, a chip capable of performing self-adaptive cooling inside the structure is needed to meet the market demand.
The heat dissipation structure aims at solving the technical problem existing in the prior art, namely the heat dissipation problem of the chip. The invention provides a self-adaptive heat flow control chip and a manufacturing method thereof, aiming at enabling a heat dissipation working medium to flow in a self-adaptive manner inside a chip structure and enabling the chip to dissipate heat independently without arranging an external heat dissipation system.
Disclosure of Invention
The invention aims to provide a self-adaptive heat flow control chip and a manufacturing method thereof, and aims to enable heat dissipation working medium to flow in a self-adaptive mode inside the chip, so that the chip can dissipate heat independently under the condition that an external heat dissipation system is not required to be arranged.
The invention provides a self-adaptive heat flow control chip, which comprises: the silicon chip substrate is packaged in the fluid channel cavity;
the silicon wafer substrate is characterized in that a rough hydrophilic region is arranged on the surface of the silicon wafer substrate, V-shaped grooves distributed in an array mode are arranged in the rough hydrophilic region, the depth of one end of each V-shaped groove gradually increases or decreases from the other end of each V-shaped groove, a wedge-shaped structure gradually narrowing or widening from one end to the other end of the V-shaped groove is formed between every two adjacent V-shaped grooves, and a micro-channel with gradient wettability is formed by the V-shaped grooves and the wedge-shaped structures.
Preferably, the silicon wafer substrate is characterized by hydrophobicity.
Preferably, the middle parts of the upper shell and the lower shell are both provided with hollow areas, so that the upper shell and the lower shell are matched to form the square-shaped fluid channel cavity.
Preferably, the edges of the middle hollow-out areas of the upper shell and the lower shell are respectively provided with a circle of inserting groove and an inserting protrusion, and the inserting protrusion and the inserting groove are installed in a matched mode.
Preferably, the outer sides of the upper shell and the lower shell are provided with external joints, and one end of each external joint penetrates through the upper shell or the lower shell and is fixedly connected with the silicon wafer substrate.
The invention also provides a manufacturing method of the self-adaptive thermal flow control chip, which comprises the following steps:
selecting a silicon wafer substrate with proper specification and hydrophobicity;
secondly, performing laser etching on the surface of the silicon wafer substrate to process a rough surface structure, and performing hydrophilic treatment on the rough surface structure to form the rough hydrophilic region;
thirdly, precisely grinding the surface of the rough hydrophilic area by using a grinding wheel, processing the V-shaped grooves which are distributed in an array manner and gradually increase in depth from the starting end to the tail end, forming wedge-shaped structures with gradually narrowed surfaces between the adjacent V-shaped grooves, and forming microchannels with gradient wettability by the V-shaped grooves and the wedge-shaped structures which are arranged at intervals;
respectively processing the outer contour and the inner structure of the upper shell and the lower shell which can be installed in a matching manner by adopting a milling machine, so that the fluid passage cavity can be formed after the upper shell and the lower shell are installed in a matching manner;
and step five, packaging the silicon chip substrate processed in the step three into the fluid channel cavity by adopting high-temperature-resistant glue or in a welding mode, and then carrying out adaptive sealing installation on the upper shell and the lower shell to obtain the self-adaptive heat flow control chip.
Preferably, in the second step, ultraviolet laser with the wavelength of 300-400nm emitted by an ultraviolet laser is used for inducing the surface micro-nano structure of the silicon wafer substrate, wherein the micro-nano pores are 20-100nm, the repetition frequency is 20-100 KHz, the pulse width is set to 10-20 ns, and the silicon wafer substrate is scanned for 1-2 times to process the rough surface structure.
Preferably, deionized water is used for hydrophilic treatment of the rough surface structure in the second step.
Preferably, the silicon wafer substrate subjected to the hydrophilic treatment in the second step is clamped on the surface of a workbench of a precise grinding machine in the third step, the feeding parameters of a grinding wheel can be adjusted by controlling the traveling route of the grinding wheel, and the V-shaped groove with the gradually increasing depth is ground on the surface of the silicon wafer substrate.
Preferably, the internal structure in the fourth step includes rectangular hollow areas arranged in the middle of the upper shell and the lower shell, and a circle of insertion protrusions and insertion grooves respectively located at the edges of the rectangular hollow areas and matched with each other.
According to the technical scheme, the V-shaped grooves with gradually changed depths are processed on the surface of the silicon wafer substrate, so that a micro-channel with a capillary wedge-shaped structure for liquid is formed between the adjacent V-shaped grooves, the liquid working medium can be transported, and the phenomenon that the liquid working medium is additionally provided with a driving force to drive the liquid working medium to flow in a micro-fluidic process is avoided. The directional self-flow of the liquid working medium on the surface of the wedge-shaped microstructure can reduce flow resistance and pressure drop, so that hydrodynamic heat transportation is improved, the circulating heat dissipation speed is enhanced, and heat is orderly transported according to needs under the rectification action. The resistance is small when the liquid working medium flows in the forward direction, the liquid working medium flows easily and automatically, and heat generated during the working of the chip is absorbed, so that the heat is taken away quickly, the temperature of the chip is reduced, the flow resistance in the reverse direction is large, the liquid working medium is difficult to flow back, fluid thermal circulation in a channel cannot be carried out continuously, and heat backflow is blocked. The manufacturing method of the self-adaptive heat flow control chip simplifies the manufacturing process of the heat dissipation technology of the micro-fluidic chip, has the characteristic of forward high-efficiency heat transfer and heat dissipation circulation, and is beneficial to quickly manufacturing the heat dissipation micro-fluidic chip in a short time so as to meet the heat dissipation requirement of the market on the micro-fluidic chip.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a self-adaptive thermal flow control chip according to the present invention in a disassembled state;
FIG. 2 is a schematic view of the structure of a silicon wafer substrate according to the present invention;
FIG. 3 is a schematic side right view of a silicon wafer substrate according to the present invention;
FIG. 4 is a schematic diagram of the present invention illustrating the processing of a silicon wafer substrate using a precision grinding machine;
FIG. 5 is a schematic view of a routing path of a V-shaped groove machined by a grinding wheel according to the present invention;
FIG. 6 is a schematic view of the directional flow heat transfer of the liquid working medium in the chip according to the present invention.
Description of reference numerals:
1: an upper housing; 11: inserting grooves; 2: a lower housing; 21: inserting and connecting the bulges; 3: a silicon wafer substrate; 31: a rough hydrophilic region; 32: a V-shaped groove; 33: a wedge-shaped structure; 4: a fluid passage cavity; 5: an external joint; 6: a microchannel; 7: a precision grinding machine table; 8: and (5) grinding wheels.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, merely for convenience of description and simplification of the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. Furthermore, the terms "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 1-3, the present invention provides a self-adaptive thermal flow control chip, which includes an upper casing 1, a lower casing 2 and a silicon wafer substrate 3, wherein the upper casing 1 and the lower casing 2 are installed in a fitting manner to form a sealed fluid channel cavity 4, and the silicon wafer substrate 3 is packaged in the fluid channel cavity 4.
The silicon wafer substrate 3 is made of a hydrophobic substrate, a rough hydrophilic region 31 formed by treatment is arranged on the surface of the substrate, V-shaped grooves 32 distributed in an array mode are arranged in the rough hydrophilic region 31, the V-shaped grooves 32 are arranged along the length direction of the silicon wafer substrate 3, the depth of one end of each V-shaped groove 32 is gradually increased or reduced from the other end of each V-shaped groove 32, a wedge-shaped structure 33 gradually narrowed or widened (gradually increased or reduced in gradient) from one end to the other end of the surface is formed between every two adjacent V-shaped grooves 32, and the V-shaped grooves 32 and the wedge-shaped structures 33 form a microchannel 6 with gradient wettability.
In this embodiment, go up casing 1 and casing 2 down and all adopt high temperature resistant material to make, the middle part of going up casing 1 and casing 2 down all is equipped with the fretwork region of rectangle, the edge in fretwork region is equipped with the structure that can adapt the installation, wherein, be equipped with round grafting arch 21 at the fretwork region edge of casing 2 down, be equipped with round inserting groove 11 at the fretwork region edge of last casing 1, through grafting arch 21 and inserting groove 11 adaptation, make casing 1 and casing 2 adaptation seal installation down, form the fluid passage cavity 4 of returning the shape between the two.
In this embodiment, an external joint 5 is disposed on the outer side of the lower shell 2, one end of the external joint 5 penetrates through the lower shell 2 and is integrally and fixedly connected with the side surface of the silicon wafer substrate 3, and the chip can be connected with other devices through the external joint 5.
The invention also provides a manufacturing method of the self-adaptive thermal flow control chip, which comprises the following steps:
step one, selecting a silicon wafer substrate 3 with appropriate specification and hydrophobicity, wherein in the embodiment, an untreated silicon wafer with the specification of 10mm × 20mm × 5mm and the hydrophobicity is adopted as a substrate to be processed;
step two, installing the silicon chip substrate 3 on an ultraviolet laser, selecting ultraviolet laser with the wavelength of 300-400nm for inducing the surface micro-nano structure of the silicon chip 1, wherein the micro-nano pore is 20-100nm, the repetition frequency is 20-100 KHz, the pulse width is set to 10-20 ns, the laser scanning range is set to 20mm multiplied by 8mm multiplied by 1mm, scanning is carried out for 1-2 times, a rough surface structure is processed on the surface of the silicon chip, and then the rough surface structure is subjected to hydrophilic treatment for 10min by using deionized water to form a rough hydrophilic region 31.
Step three, as shown in fig. 4 and 5, clamping the silicon wafer substrate 3 with the processed surface structure on a workbench of a precision grinding machine table 7 for processing, controlling a traveling route of a grinding wheel 8 by controlling a transmission system of the precision grinding machine table 7, performing precision grinding on the surface of the rough hydrophilic region 31, and processing V-shaped grooves 32 and wedge-shaped structures 33 which are alternately arranged in the transverse direction and the longitudinal direction of the silicon wafer substrate 3 so as to obtain the microchannel 6 formed by combining the two. The V-shaped grooves 32 are V-shaped grooves 32 with the depth gradually increasing from the starting end (the initial grinding position, which is close to the edge of the short side of the silicon wafer substrate 3) to the tail end (which is flush with the edge of the other short side of the silicon wafer substrate 3), the tail end openings of the V-shaped grooves 32 are positioned on the side face of the silicon wafer substrate 3, the V-shaped grooves 32 are distributed in an array manner, wedge-shaped structures 33 with gradually narrowed surfaces and gradually increased longitudinal gradients are formed between the adjacent V-shaped grooves 32, and the V-shaped grooves 32 and the wedge-shaped structures 33 which are arranged at intervals form a microchannel 6 with gradient wettability. Because the silicon chip substrate 3 has hydrophobicity, the rough surface processed by the laser is hydrophilic after being treated by the deionized water, so that the liquid on the surface of the silicon chip substrate 3 is subjected to the repulsive force of the hydrophobicity of the micro-channel 6, and the flowing and the transportation of the liquid working medium on the surface of the chip are facilitated.
When a precise grinding machine table 7 is used for processing the micro-channel 6 on the surface of the silicon wafer substrate 3, the gradient size of the wedge-shaped structure 3 required by processing is determined according to the wetting condition required to be realized, and the gradient size can be realized by controlling the continuously increased feeding parameter f during the processing of the grinding wheel 8 for grinding processing. The precision grinding processing uses a V-shaped grinding wheel for processing, the arc radius r of the micro-grinding cutting tip of the V-shaped grinding wheel is not more than 5 mu m, the V-shaped angle alpha of the grinding wheel 8 is 60 degrees, the walking path of the grinding wheel 8 is arranged to move along the oblique line of the workpiece which continuously deepens the cutting depth, specifically as shown in figure 4, the feeding speed is 100-400mm/min, and the structure design of the V-shaped groove 32 is as follows: the depth d is 10-100 mu m (the shallowest is 10 mu m at the starting end and the deepest is 100 mu m at the tail end), the gradient beta is 2-10 degrees, and the feeding depth of the grinding wheel 8 is provided with corresponding oblique line walking paths according to different preset wedge-shaped depths and gradients. In the embodiment, the oblique line angle beta of the processing path is set to be 10 degrees, the maximum value d of the feeding depth is 100 microns, the radius r of the arc of the tip of the grinding wheel 8 is 5 microns, the feeding speed is 400mm/min, the linear speed of the grinding wheel 8 is 50m/s, and the structure of a single V-shaped groove 32 is obtained after processing. And repeating the steps, and repeating the processing by controlling the distance h between the adjacent V-shaped grooves 32 to be about 500 mu m, so as to process the chip comprising the longitudinally-spaced wedge-shaped structures 33 and the transverse V-shaped grooves 32.
The micro-channel 6 has better capillary action on liquid, is beneficial to transporting liquid working media, and avoids additionally arranging a driving force for the liquid working media in micro-fluidic to drive the liquid working media to flow. The wettability of the liquid working medium on the surface of the wedge-shaped structure 33 is different, so that the liquid flows directionally and automatically, the flow resistance is reduced, the pressure is reduced, the hydrodynamic heat transportation is improved, the circulating heat dissipation speed is enhanced, and the heat is transported orderly according to the requirement under the rectification action.
Selecting high-temperature-resistant materials as raw materials of the upper shell 1 and the lower shell 2, in the embodiment, selecting hard alloy, and then respectively processing the outer contour and the inner structure of the upper shell 1 and the lower shell 2 which can be installed in a matched mode by adopting a milling machine, wherein the inner structure comprises a hollow area, a circle of inserting groove 11 at the edge of the hollow area of the upper shell 1 and an inserting protrusion 21 at the edge of the hollow area of the lower shell 2, a lower half cavity in a square-wave shape is processed between the inserting protrusion 21 and the lower shell 2, an upper half cavity in a square-wave shape is processed between the inserting groove 11 and the upper shell 1, the upper shell 1 and the lower shell 2 are installed in a matched mode through the inserting protrusion 21 and the inserting groove 11, and the upper half cavity and the lower half cavity are combined to form a fluid channel cavity 4 for the circulation of a liquid working medium after the upper half cavity and the lower half cavity are installed and sealed.
And step five, packaging the silicon chip substrate 3 processed in the step three into a fluid channel cavity 4 by adopting high-temperature-resistant glue or in a welding mode, then carrying out adaptive sealing installation on the upper shell 1 and the lower shell 2 to obtain a self-adaptive heat flow control chip, and then filling a liquid heat dissipation working medium into the fluid channel cavity 4.
As shown in fig. 6, a wedge-shaped structure 33 having a capillary action on liquid is formed between the V-shaped grooves 32, and the wedge-shaped structure form a micro-channel 6, so that liquid working media can be transported, and the situation that a driving force is additionally arranged on the liquid working media in micro-fluidic to drive the liquid working media to flow is avoided. The directional self-flow of the liquid working medium on the surface of the wedge-shaped microstructure can reduce flow resistance and pressure drop, so that hydrodynamic heat transportation is improved, the circulating heat dissipation speed is enhanced, and heat is orderly transported according to needs under the rectification action. When the liquid working medium works in the positive direction of the fluid channel cavity 4, the liquid can be filled in the micro channel by the capillary force of the micro-scale pore channel, a passage is rapidly opened under certain pressure, gas-liquid multiphase separation is realized, the flowing resistance of the liquid working medium in the fluid channel cavity along the self-flowing direction is small, the liquid working medium is easy to flow automatically, and the liquid working medium absorbs heat generated by the chip during working in the flowing process, so that the heat is rapidly taken away, and the temperature of the chip is reduced; and a condensing working medium is arranged at the other end of the fluid channel cavity and used as a condensing end, and the reciprocating heat transfer and heat dissipation circulation is realized, so that the forward efficient heat transfer and heat dissipation are realized. When the device works in the reverse direction, the liquid working medium is difficult to flow back due to the large flow resistance in the reverse direction, so that the thermal circulation of the fluid in the channel cannot be continuously carried out, and the heat backflow is blocked. In the process of preparing the self-adaptive heat flow control chip, the chip surface is subjected to hydrophilic treatment, so that the liquid transportation capacity is improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. An adaptive thermal flow control chip, comprising: the silicon chip substrate is packaged in the fluid channel cavity;
the silicon wafer substrate is characterized in that a rough hydrophilic region is arranged on the surface of the silicon wafer substrate, V-shaped grooves distributed in an array mode are arranged in the rough hydrophilic region, the depth of one end of each V-shaped groove gradually increases or decreases from the other end of each V-shaped groove, a wedge-shaped structure gradually narrowing or widening from one end to the other end is formed between every two adjacent V-shaped grooves, and a microchannel with gradient wettability is formed by the V-shaped grooves and the wedge-shaped structures.
2. The adaptive thermal flow control chip of claim 1, wherein the silicon wafer substrate is hydrophobic.
3. The adaptive thermal flow control chip of claim 1, wherein a hollow area is disposed in the middle of each of the upper and lower housings, so that the upper and lower housings are adapted to form the fluid channel cavity in a shape of a square-circle.
4. The adaptive heat flow control chip according to claim 3, wherein a circle of insertion groove and an insertion protrusion are respectively formed at the edges of the middle hollow area of the upper shell and the lower shell, and the insertion protrusion and the insertion groove are installed in a matching manner.
5. The adaptive thermal flow control chip according to claim 1, wherein external joints are disposed on outer sides of the upper case and the lower case, and one end of each external joint penetrates through the upper case or the lower case and is fixedly connected to the silicon wafer substrate.
6. The method of manufacturing an adaptive thermal flow control chip according to any one of claims 1-5, comprising the steps of:
selecting a silicon wafer substrate with proper specification and hydrophobicity;
secondly, performing laser etching on the surface of the silicon wafer substrate to process a rough surface structure, and performing hydrophilic treatment on the rough surface structure to form a rough hydrophilic region;
thirdly, precisely grinding the surface of the rough hydrophilic area by using a grinding wheel, processing the V-shaped grooves which are distributed in an array manner and the depth of which is gradually increased from the starting end to the tail end, forming wedge-shaped structures with gradually narrowed surfaces between the adjacent V-shaped grooves, and forming microchannels with gradient wettability by the V-shaped grooves and the wedge-shaped structures which are arranged at intervals;
respectively processing the outer contour and the inner structure of the upper shell and the lower shell which can be installed in an adaptive mode by adopting a milling machine, so that the fluid passage cavity can be formed after the upper shell and the lower shell are installed in an adaptive mode;
and step five, packaging the silicon chip substrate processed in the step three into the fluid channel cavity by adopting high-temperature-resistant glue or in a welding mode, and then carrying out adaptive sealing installation on the upper shell and the lower shell to obtain the self-adaptive heat flow control chip.
7. The manufacturing method of the adaptive heat flow control chip according to claim 6, wherein in the second step, ultraviolet laser with wavelength of 300-400nm emitted by an ultraviolet laser is used for inducing the surface micro-nano structure of the silicon chip substrate, wherein the micro-nano pore is 20-100nm, the repetition frequency is 20-100 KHz, the pulse width is set to 10-20 ns, and the rough surface structure is processed by scanning for 1-2 times.
8. The method of claim 6, wherein in step two, deionized water is used to perform hydrophilic treatment on the rough surface structure.
9. The method according to claim 6, wherein the silicon wafer substrate after the hydrophilic treatment in the second step is clamped on the surface of a worktable of a precision grinding machine in the third step, and the feeding parameters of the grinding wheel can be adjusted by controlling the traveling route of the grinding wheel, so that the V-shaped groove with gradually increasing depth is ground on the surface of the silicon wafer substrate.
10. The method according to claim 6, wherein the internal structure in step four includes rectangular hollow areas formed in the middle of the upper case and the lower case, and a circle of mating protrusions and mating grooves respectively formed at edges of the rectangular hollow areas.
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Citations (9)
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