CN114978338B - High-speed BPSK phase modulation circuit for optical carrier radio frequency signals - Google Patents
High-speed BPSK phase modulation circuit for optical carrier radio frequency signals Download PDFInfo
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- CN114978338B CN114978338B CN202210507258.5A CN202210507258A CN114978338B CN 114978338 B CN114978338 B CN 114978338B CN 202210507258 A CN202210507258 A CN 202210507258A CN 114978338 B CN114978338 B CN 114978338B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 61
- 238000006243 chemical reaction Methods 0.000 claims abstract description 26
- 230000005540 biological transmission Effects 0.000 claims abstract description 20
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 230000008878 coupling Effects 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims abstract description 10
- 238000005859 coupling reaction Methods 0.000 claims abstract description 10
- 239000013307 optical fiber Substances 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 7
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/516—Details of coding or modulation
- H04B10/548—Phase or frequency modulation
- H04B10/556—Digital modulation, e.g. differential phase shift keying [DPSK] or frequency shift keying [FSK]
- H04B10/5561—Digital phase modulation
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- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Digital Transmission Methods That Use Modulated Carrier Waves (AREA)
- Optical Communication System (AREA)
Abstract
The invention discloses a high-speed BPSK phase modulation circuit of an optical carrier radio frequency signal, which comprises an electric-optical conversion part and an optical-electric conversion part which are connected through an optical transmission medium; the electro-optical conversion part comprises a laser and a modulator, wherein an output optical fiber of the laser is connected with an input optical fiber of the modulator, and the modulator inputs an electric signal and outputs an optical signal; the photoelectric conversion part comprises an optical power divider, a positive bias light detector, a negative bias light detector, a matching resistor a, a matching resistor b, a BPSK change-over switch and an alternating current coupling capacitor. The invention realizes the change of the phase of the electric signal between 0 and 180 degrees, so that the ultra-wideband BPSK modulation can be completed on the basis of completing the high-fidelity long-distance transmission of the electric signal. The invention can be widely applied to products with ultra-wideband, high-speed and high-quality modulation requirements on electric signals or requirements on BPSK modulation and ROF transmission at the same time.
Description
Technical Field
The invention belongs to the technical field of microwave photons, and particularly relates to a high-speed BPSK phase modulation circuit for an optical carrier radio frequency signal.
Background
The optical carrier radio frequency technology mainly uses electric-optical conversion to convert an input electric signal into an optical signal, uses an optical fiber as a transmission medium to realize long-distance transmission of the signal, and then recovers the optical signal into an electric signal again through the optical-electric conversion. Compared with a transmission mode based on a cable as a transmission medium, the optical carrier radio frequency technology utilizes the advantages of large broadband, low transmission loss, wavelength division multiplexing and the like of a photon-based technology to realize the purposes of system weight reduction, broadband signal stable phase transmission, long-time delay, distributed signal centralized processing and the like, and has been increasingly widely applied.
BPSK (Binary Phase Shift Keying, BPSK binary phase shift keying) is a method of changing the modulation scheme of the phase information of an electrical signal, so that the phase of the electrical signal is respectively operated at two states of 0 ° and 180 °. The BPSK modulation of the electric signal is realized by adopting a traditional microwave phase shifter, and the BPSK modulation device has the problems of low frequency bandwidth, large volume, poor phase consistency and the like, and the working bandwidth of the traditional microwave phase shifter is about 10 GHz.
In the application of the traditional system, the long-distance optical transmission and BPSK modulation of the electric signal are realized separately, the long-distance transmission of the electric signal is realized by utilizing an optical carrier radio frequency technology, the optical signal is converted into the electric signal again by utilizing a photoelectric conversion part, and then the BPSK modulation of the electric signal is realized by adopting a microwave phase shifter. The mode that the two technologies are adopted to realize respectively in turn has the problems of large volume, high weight, difficult miniaturization and the like, and cannot meet the requirements of miniaturization and high integration of the system. Meanwhile, the microwave phase shifter cannot meet the requirements of high broadband, high modulation quality and the like of the system.
Disclosure of Invention
Aiming at the defects in the prior art, the high-speed BPSK phase modulation circuit for the optical carrier radio frequency signal provided by the invention solves the problems of ultra-high bandwidth, miniaturization, high-consistency long-distance transmission of electric signals and BPSK modulation.
In order to achieve the aim of the invention, the invention adopts the following technical scheme: an optical carrier radio frequency signal high-speed BPSK phase modulation circuit comprises an electric-optical conversion part and an optical-electric conversion part which are connected through an optical transmission medium;
the electro-optical conversion part comprises a laser and a modulator, wherein an output optical fiber of the laser is connected with an input optical fiber of the modulator, and the modulator inputs an electric signal and outputs a modulated optical signal;
the photoelectric conversion part comprises an optical power divider, a positive bias optical detector, a negative bias optical detector, a matching resistor a, a matching resistor b, a BPSK switcher and an alternating current coupling capacitor, wherein the optical power divider distributes 1:1 power of an input optical signal and respectively injects the input optical signal into the positive bias optical detector and the negative bias optical detector to convert the optical signal into an electric signal, the radio frequency output end of the positive bias optical detector is respectively connected with the matching resistor a and the input end 1 of the BPSK switcher, the radio frequency output end of the negative bias optical detector is respectively connected with the matching resistor b and the input end 2 of the BPSK switcher, the output end of the BPSK switcher is connected with the alternating current coupling capacitor, and the direct current component in the output electric signal is removed through the alternating current coupling capacitor, so that the BPSK phase modulation of the electric signal is realized.
Further: the modulator is made of lithium niobate material, indium phosphide material or silicon-based material.
Further: the laser is a semiconductor laser or an external cavity laser and is used for providing an optical carrier of an optical link.
Further: the photoelectric responsivity of the positive bias light detector is the same as that of the negative bias light detector, the resistance values of the matching resistor a and the matching resistor b are the same, the states of the two input ends of the BPSK change-over switch are the same, and the consistency of the electric signals of the output BPSK change-over switch between 0 degrees and 180 degrees is ensured.
Further: the positive bias photodetector is connected to a positive voltage (+v) and the negative bias photodetector is connected to a negative voltage (-V).
The beneficial effects of the invention are as follows: the invention provides a high-speed BPSK phase modulation circuit for an optical carrier radio frequency signal, which realizes BPSK phase modulation of an electric signal with ultra-high bandwidth, miniaturization and high consistency by utilizing a microwave photon technology so as to meet the requirements of electronic equipment on a multifunctional and integrated system for broadband long-distance transmission, high bandwidth and high quality phase modulation of the electric signal.
The invention adopts two detectors with positive and negative bias and uses a high-speed change-over switch to switch channels in the photoelectric conversion part of the optical-electrical radio frequency transmission technology, thereby realizing the change of the phase of the electric signal between 0 DEG and 180 DEG, and realizing the ultra-wideband BPSK modulation on the basis of completing the high-fidelity long-distance transmission of the electric signal. The invention can be widely applied to products with ultra-wideband, high-speed and high-quality modulation requirements on electric signals or requirements on BPSK modulation and ROF transmission at the same time.
Drawings
FIG. 1 is a circuit block diagram of the present invention;
FIG. 2 is a schematic waveform diagram of an output electrical signal of a forward biased photodetector according to an embodiment of the invention;
FIG. 3 is a schematic waveform diagram of an output electrical signal of a negative bias photodetector according to an embodiment of the invention;
fig. 4 is a schematic waveform diagram of an electrical signal output after BPSK modulation in an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
As shown in fig. 1, a schematic block diagram of a high-speed BPSK phase modulation circuit for an optical carrier radio frequency signal according to the present invention includes an electric-to-optical conversion portion, an optical-to-electrical conversion portion, and an optical transmission medium, where the electric-to-optical conversion portion and the optical-to-electrical conversion portion are connected to each other through the optical transmission medium.
The electro-optical conversion section includes a laser 1 and a modulator 2, thereby realizing conversion of an electrical signal into an optical signal. The output optical fiber of the laser 1 is connected with the input optical fiber of the modulator 2, and an input electric signal is loaded to the radio frequency input port of the modulator 2.
The photoelectric conversion part comprises an optical power divider 3, a positive bias detector 4, a negative bias detector 5, a matching resistor a6, a matching resistor b7, a BPSK switcher 8 and an alternating current coupling capacitor 9. The optical power divider 3 distributes the power of an input optical signal by 1:1, and respectively injects the power into the positive bias detector 4 and the negative bias detector 5 to convert the optical signal into an electric signal; the radio frequency output ends of the positive bias detector 4 and the negative bias detector 5 are respectively connected with the matching resistor a6 and the matching resistor b7, so that the output photo-generated current signals are converted into voltage signals and 50 ohm matching with an output port is realized; the output voltage signals of the matching resistor a6 and the matching resistor b7 are respectively connected with two input ends of the BPSK selector switch 8, and the phase of the electric signal is switched at a high speed between 0 DEG and 180 DEG by switching; the output end of the BPSK switcher 8 is connected with the AC coupling capacitor 9, the AC coupling capacitor 9 is utilized to remove the DC component in the output electric signal, only the AC component in the electric signal is reserved, and the external output of the signal is realized.
The implementation mode of the electro-optical conversion part can be an implementation mode of external modulation electro-optical conversion or an implementation mode of direct modulation electro-optical conversion.
The material of the modulator 2 may be lithium niobate material, indium phosphide material, or silicon-based material.
The laser 1 is a semiconductor laser or an external cavity laser, and is used for providing an optical carrier wave of a microwave photon link.
To ensure consistency of the output BPSK electrical signals between 0 ° and 180 °, the responsivity of the positive bias detector 4 and the negative bias detector 5 should be kept consistent; the resistances of the matching resistor a6 and the matching resistor b7 should be kept consistent, and the BPSK switch 8 should be kept consistent in the port 1 state and the port 2 state.
As can be seen by comparing the waveforms of the electrical signals in the waveform diagram of the output electrical signal of the positive bias photodetector of fig. 2 and the waveform diagram of the output electrical signal of the negative bias photodetector of fig. 3, the two electrical signal waveforms are 180 ° out of phase.
Fig. 4 is a schematic waveform diagram of an electrical signal output after BPSK modulation in the implementation method of high-speed BPSK phase modulation of an optical carrier radio frequency signal according to the present invention. The BPSK switch realizes the mutual switching between the output port 1 and the port 2 at the time t1, t2, t3 and t4 respectively. It can be seen from fig. 4 that the phases of the output electrical signals achieve 180 ° phase changes at t1, t2, t3, t4, respectively.
Claims (4)
1. An optical carrier radio frequency signal high-speed BPSK phase modulation circuit is characterized by comprising an electric-optical conversion part and an optical-electric conversion part which are connected through an optical transmission medium;
the electro-optical conversion part comprises a laser and a modulator, wherein an output optical fiber of the laser is connected with an input optical fiber of the modulator, and the modulator inputs an electric signal and outputs a modulated optical signal;
the photoelectric conversion part comprises an optical power divider, a positive bias optical detector, a negative bias optical detector, a matching resistor a, a matching resistor b, a BPSK switcher and an alternating-current coupling capacitor, wherein the optical power divider distributes 1:1 power of an input optical signal and respectively injects the input optical signal into the positive bias optical detector and the negative bias optical detector to convert the optical signal into an electric signal, the radio frequency output end of the positive bias optical detector is respectively connected with the input end 1 of the matching resistor a and the BPSK switcher, and the radio frequency output end of the negative bias optical detector is respectively connected with the input end 2 of the matching resistor b and the BPSK switcher, and the high-speed phase switching of the electric signal between 0 DEG and 180 DEG is realized by switching the switch; the output end of the BPSK change-over switch is connected with the alternating-current coupling capacitor, and the direct-current component in the output electric signal is removed through the alternating-current coupling capacitor, so that the BPSK phase modulation of the electric signal is realized; the photoelectric responsivity of the positive bias light detector is the same as that of the negative bias light detector, the resistance values of the matching resistor a and the matching resistor b are the same, the states of the two input ends of the BPSK change-over switch are the same, and the consistency of the electric signals of the output BPSK change-over switch between 0 degrees and 180 degrees is ensured.
2. The high-speed BPSK phase modulation circuit of the radio frequency signal on optical carrier of claim 1, wherein the modulator is made of lithium niobate material, indium phosphide material or silicon-based material.
3. The high-speed BPSK phase modulation circuit of an optical carrier radio frequency signal according to claim 1, wherein the laser is a semiconductor laser or an external cavity laser for providing an optical carrier of an optical link.
4. The high-speed BPSK phase modulation circuit of an optical carrier radio frequency signal according to claim 1, wherein said positive bias photodetector is connected to a positive voltage +v, and said negative bias photodetector is connected to a negative voltage-V.
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| CN202210507258.5A CN114978338B (en) | 2022-05-11 | 2022-05-11 | High-speed BPSK phase modulation circuit for optical carrier radio frequency signals |
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| CN202210507258.5A CN114978338B (en) | 2022-05-11 | 2022-05-11 | High-speed BPSK phase modulation circuit for optical carrier radio frequency signals |
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| CN114978338B true CN114978338B (en) | 2023-11-21 |
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| CN101112024A (en) * | 2004-12-30 | 2008-01-23 | 泰科电讯（美国）有限公司 | Optical receiver including a system and method of controlling gain of an optical amplifier |
| CN110780398A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第二十九研究所 | Direct-adjusting analog electro-optical conversion integrated assembly |
| CN111464242A (en) * | 2020-03-20 | 2020-07-28 | 常州工学院 | Device and method for generating octave frequency optical millimeter wave QPSK signal |
| CN113671445A (en) * | 2021-07-29 | 2021-11-19 | 杭州电子科技大学 | DP-BPSK-based method and system for generating dual-band phase encoding signal |
| CN114301538A (en) * | 2021-12-31 | 2022-04-08 | 杭州电子科技大学 | Phase coding signal generation system and method based on DOMZM |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20120288284A1 (en) * | 2010-02-25 | 2012-11-15 | Mitsubishi Electric Corporation | Optical transmitter |
| JP6620409B2 (en) * | 2015-03-11 | 2019-12-18 | 富士通株式会社 | Optical transmitter, optical transmission system, and optical communication control method |
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2022
- 2022-05-11 CN CN202210507258.5A patent/CN114978338B/en active Active
Patent Citations (5)
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|---|---|---|---|---|
| CN101112024A (en) * | 2004-12-30 | 2008-01-23 | 泰科电讯（美国）有限公司 | Optical receiver including a system and method of controlling gain of an optical amplifier |
| CN110780398A (en) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第二十九研究所 | Direct-adjusting analog electro-optical conversion integrated assembly |
| CN111464242A (en) * | 2020-03-20 | 2020-07-28 | 常州工学院 | Device and method for generating octave frequency optical millimeter wave QPSK signal |
| CN113671445A (en) * | 2021-07-29 | 2021-11-19 | 杭州电子科技大学 | DP-BPSK-based method and system for generating dual-band phase encoding signal |
| CN114301538A (en) * | 2021-12-31 | 2022-04-08 | 杭州电子科技大学 | Phase coding signal generation system and method based on DOMZM |
Non-Patent Citations (2)
| Title |
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