CN114975675A - Photoelectric device and preparation method thereof - Google Patents
Photoelectric device and preparation method thereof Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
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Abstract
The invention discloses a photoelectric device, comprising: the substrate is a P-type heavily doped or N-type heavily doped Ge metal; an insulating layer formed on a part of a surface of one side of the substrate; a GeSe two-dimensional material layer extending from a portion of the surface of the substrate onto the insulating layer, the GeSe two-dimensional material layer including at least one piece of GeSe thin film configured to generate photo-generated carriers in response to light; an electrode comprising at least one set of source and drain electrodes configured to receive photogenerated carriers; at least one group of source and drain electrodes are respectively formed on each GeSe thin film and on the opposite side of the substrate from the GeSe two-dimensional material layer; wherein the substrate and the GeSe two-dimensional material layer form a two-dimensional three-dimensional heterojunction. The invention also discloses a preparation method of the photoelectric device.
Description
Technical Field
At least one embodiment of the present invention relates to an optoelectronic device, and more particularly, to an optoelectronic device having a two-dimensional three-dimensional heterojunction and a method of fabricating the same.
Background
In-plane atoms of a two-dimensional (2D) material are interacted by strong chemical bonds and then stacked into a bulk material by weak van der waals force interaction, so that the two-dimensional material can be peeled into different layers by strong mechanical force, and two axial directions of the two-dimensional material having a low-symmetry crystal structure in a two-dimensional plane are arranged in different ways, so that the two-dimensional material exhibits in-plane anisotropy, and the regulation of physical properties by simply changing the plane crystal orientation can be utilized to develop a novel device such as a polarization-sensitive photodetector.
Devices based on two-dimensional materials have been widely used in photovoltaics, semiconductors, electrodes, and biological monitoring due to their unique properties. Meanwhile, the development of conventional substrates such as silicon, germanium, gallium nitride, indium phosphide, mica and the like has reached a very mature stage, and further development space needs to be opened. The novel two-dimensional materials such as graphene and transition metal disulfide have unique optical, electrical and magnetic properties and new quantum physical phenomena, and have potential application in the aspects of information, micro-nano photoelectricity and the like. Therefore, a cross-dimensional heterostructure that can combine the advantages of low dimensional materials and conventional substrates is of interest.
Disclosure of Invention
In view of the above, the present invention provides a photoelectric device having a two-dimensional three-dimensional heterojunction and a method for fabricating the same, which improves the detection capability of polarized light with a broad spectrum by forming a built-in electric field near a heterojunction interface.
The present invention provides a photovoltaic device comprising: the substrate is a P-type heavily doped or N-type heavily doped Ge metal; an insulating layer formed on a part of a surface of one side of the substrate; a GeSe two-dimensional material layer extending from a portion of the surface of the substrate onto the insulating layer, the GeSe two-dimensional material layer including at least one piece of GeSe thin film configured to generate photo-generated carriers in response to light; an electrode comprising at least one set of source and drain electrodes configured to receive photogenerated carriers; at least one group of source and drain electrodes are respectively formed on each GeSe thin film and on the opposite side of the substrate from the GeSe two-dimensional material layer; wherein the substrate and the GeSe two-dimensional material layer form a two-dimensional three-dimensional heterojunction.
According to an embodiment of the invention, the resistivity of the substrate is less than 0.1 Ω · cm -1 ；
According to an embodiment of the invention, the insulating layer is silicon oxide or aluminum oxide.
According to an embodiment of the present invention, the GeSe thin film is formed of a GeSe single crystal having in-plane anisotropy; the molar ratio of Ge to Se of the GeSe two-dimensional material layer is 1: 1.
According to the embodiment of the invention, the thickness of the GeSe two-dimensional material layer is 20-100 nm.
According to the embodiment of the invention, the material of the source electrode and the drain electrode is gold; the thickness of the source electrode is 30-60 nm; the thickness of the drain electrode is 30 to 60 nm.
The invention also provides a preparation method of the photoelectric device, which comprises the following steps: forming an insulating layer on one side of a substrate; etching the insulating layer to expose part of the surface of the substrate; transferring at least one GeSe thin film to a part of the surface of the substrate; wherein at least one GeSe film extends from part of the surface of the substrate to the insulating layer; forming a source electrode on at least one piece of GeSe thin film; and forming a drain corresponding to each source on the other side of the substrate.
According to the embodiment of the invention, an insulating layer is formed on one side of a substrate by utilizing an atomic layer deposition technology or an ion beam sputtering technology; and etching the insulating layer by utilizing a photoetching technology and an inductive coupling plasma etching technology to expose part of the surface of the substrate.
According to the embodiment of the invention, the GeSe thin film is obtained by mechanically stripping GeSe crystal.
According to an embodiment of the present invention, at least one GeSe thin film is transferred onto a portion of the surface of a substrate using dry transfer.
According to an embodiment of the present invention, forming a source electrode on at least one piece of GeSe thin film includes: spin-coating a polymethyl methacrylate layer on at least one GeSe film; etching the polymethyl methacrylate layer by using an electron beam evaporation technology to obtain a source electrode pattern groove; evaporating metal to the source pattern groove by using an electron beam evaporation technology; and removing the polymethyl methacrylate layer outside the groove of the source electrode pattern by using a developing solution.
According to the photoelectric device provided by the embodiment of the invention, because the GeSe two-dimensional material has in-plane anisotropy, the GeSe two-dimensional material can respond to the polarized light in the range of 360-1064 nm, and the photoelectric device prepared by adopting the GeSe two-dimensional material can detect the polarized light with the wavelength in the range of 360-1064 nm, so that the detection of a polarized light source with a wide spectrum is realized, and the application range of the photoelectric device is wider.
According to the photoelectric device provided by the embodiment of the invention, the heavily doped Ge metal is used as the substrate, so that the response current of photoelectric conversion of the photoelectric device can be improved.
According to the photoelectric device provided by the embodiment of the invention, the two-dimensional three-dimensional heterojunction structure is formed, and the built-in electric field is formed near the heterojunction interface, so that the generated photon-generated carriers are accelerated to be transmitted to the electrode, the photoresponse current of the photoelectric device can be further improved, and the detection capability of the polarized light with a wide spectrum is improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a photovoltaic device according to an embodiment of the present invention;
fig. 2 is a schematic top view of a photovoltaic device according to an embodiment of the present invention; and
fig. 3 is a flow chart of a method of fabricating a photovoltaic device according to an embodiment of the present invention.
[ description of reference ]
1-a substrate;
2-an insulating layer;
3-GeSe two-dimensional material layer;
a 4-source electrode;
5-drain electrode.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments. This invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numerals refer to like elements throughout.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The terms "comprises," "comprising," and the like, as used herein, specify the presence of stated features, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, or components.
In related research, a large number of cross-dimensional 1D/2D, 2D/2D and 2D/3D heterostructure devices have been successfully fabricated, with 2D/3D heterojunction photodetectors being of the greatest interest. On the one hand, the light absorption efficiency in 2D/3D heterostructures will be much stronger than ultra-thin 1D (2D)/2D stacks, laying a solid foundation for photo-carrier generation. Meanwhile, the 2D/3D heterostructure device can show excellent performance that a two-dimensional device and a three-dimensional device cannot exert independently. On the other hand, 2D/3D heterojunction photodetectors can be realized by integrating 2D layered materials directly onto mature 3D commercial substrates (e.g., silicon) through inter-layer van der waals interactions.
In view of this, the present invention provides a photoelectric device having a two-dimensional three-dimensional heterojunction and a method for manufacturing the same, so as to improve the detection capability of polarized light with a broad spectrum.
Fig. 1 is a schematic cross-sectional view of a photovoltaic device according to an embodiment of the present invention. Fig. 2 is a schematic top view of a photovoltaic device according to an embodiment of the present invention.
According to an exemplary embodiment of the present invention, as illustrated with reference to fig. 1 and 2, the present invention provides an optoelectronic device comprising: the substrate 1, the substrate 1 is Ge metal of P type heavy doping or N type heavy doping; an insulating layer 2 formed on a part of the surface of one side of the substrate 1; a GeSe two-dimensional material layer 3 extending from a portion of the surface of the substrate 1 onto the insulating layer 2, the GeSe two-dimensional material layer 3 including at least one GeSe thin film configured to generate photo-generated carriers in response to light; an electrode comprising at least one set of a source 4 and a drain 5 configured to receive photogenerated carriers; at least one set of source electrode 4 and drain electrode 5 are respectively formed on each GeSe thin film and on the opposite side of the substrate 1 from the GeSe two-dimensional material layer; wherein the substrate 1 and the GeSe two-dimensional material layer 3 form a two-dimensional three-dimensional heterojunction.
According to an embodiment of the present invention, the substrate 1 has a resistivity of less than 0.1 Ω · cm -1 。
According to the embodiment of the invention, the insulating layer 2 can be silicon oxide, and the thickness of the silicon oxide is 100-150 nm; alternatively, the insulating layer 2 may be alumina; the thickness of the alumina is 30 to 50 nm.
According to an embodiment of the present invention, the GeSe thin film is formed of a GeSe single crystal having in-plane anisotropy; the GeSe two-dimensional material layer 3 has a molar ratio of Ge to Se of 1: 1.
According to an embodiment of the present invention, the GeSe two-dimensional material layer 3 may include a plurality of GeSe thin films that are tiled on different positions on a partial surface of one side of the substrate 1, extending from the partial surface of the substrate 1 onto the insulating layer 2.
Fig. 3 is a flow chart of a method of fabricating a photovoltaic device according to an embodiment of the present invention.
The invention also provides a method for preparing the photoelectric device, which is shown in fig. 3 and comprises the following steps: steps S01 to S04.
In step S01, an insulating layer 2 is formed on one side of the substrate 1.
According to an embodiment of the invention, an insulating layer 2 is grown on one side of the substrate 1 using Atomic Layer Deposition (ALD) or ion beam sputtering.
In step S02, the insulating layer 2 is etched to expose a portion of the surface of the substrate 1.
According to an embodiment of the present invention, the insulating layer 2 is etched using a photolithography technique and an inductively coupled plasma etching technique to expose a portion of the surface of the substrate 1. Specifically, a mask pattern of a reticle is transferred onto the substrate 1 by a photolithography technique, a photoresist is used as a mask, and then a portion not covered by the photoresist is etched by an inductively coupled plasma technique to expose a portion of the surface of the substrate 1.
At step S03, transferring at least one GeSe thin film onto a portion of the surface of the substrate 1; wherein at least one GeSe thin film extends from part of the surface of the substrate 1 to the insulating layer 2.
According to the embodiment of the invention, the GeSe single crystal is separated by adopting a mechanical stripping method to obtain a GeSe thin film, specifically, the GeSe single crystal is repeatedly adhered and torn by using an adhesive tape by adopting the mechanical stripping method, the GeSe crystal is transferred to Polydimethylsiloxane (PDMS), the PDMS is placed on a transfer platform, a qualified GeSe thin film is searched by a microscope to move to a part of the surface of the substrate 1, and the GeSe thin film is attached to the part of the surface of the substrate 1 and extends to the insulating layer 2. Wherein the GeSe single crystal is prepared in a vacuum environment at 650 ℃ by adopting a chemical vapor transport method.
According to the embodiment of the invention, qualified GeSe thin films are selected according to the thickness standard, and the GeSe thin films meeting the preset thickness after being qualified are transferred to part of the surface of the substrate 1.
According to the embodiment of the invention, the thickness of the GeSe two-dimensional material layer 3 is 20-100 nm, for example, 20nm, 50nm, 60nm, 80nm, 100 nm.
According to an embodiment of the present invention, the GeSe two-dimensional material layer 3 is transferred onto a portion of the surface of the substrate 1 using dry transfer. The GeSe two-dimensional material layer may be replaced by other two-dimensional materials having polarization properties, such as black phosphorus.
In step S04, forming a source electrode 4 on at least one GeSe thin film; a drain 5 corresponding to each source 4 is formed on the other side of the substrate 1.
According to an embodiment of the present invention, forming the source electrode 4 on at least one GeSe thin film includes: spin-coating a polymethyl methacrylate layer (PMMA layer) on at least one GeSe film; etching the polymethyl methacrylate layer by using an electron beam evaporation technology to obtain a source electrode pattern groove; evaporating metal to the source pattern groove by using an electron beam evaporation technology; and removing the polymethyl methacrylate layer outside the groove of the source pattern by using a developing solution.
According to the embodiment of the invention, the thickness of the PMMA layer is 1-1.2 mu m, the spin coating glue homogenizing speed of the PMMA layer is 8000-10000 r/s, and the glue homogenizing time is 60-70 s.
According to the embodiment of the invention, the material of the source electrode 4 and the drain electrode 5 is gold; the thickness is 30 to 60nm, and may be, for example, 30nm, 40nm, 50nm, 55nm or 60 nm.
Since gold has an advantage of high conductivity, the source electrode 4 and the drain electrode 5 are made of gold, and ohmic contact is easily formed.
The invention also provides a detection method for detecting polarized light by using the photoelectric device, which comprises the following steps: electrically connecting the photoelectric device with the PCB through the metal electrode on the PCB and the electrode of the photoelectric device; connecting the photoelectric device and the PCB into a closed circuit and connecting the photoelectric device and the PCB with an oscilloscope; selecting any laser in the response wavelength range of the photoelectric device as incident light, and irradiating the incident light on a heterojunction of the photoelectric device after the incident light passes through a polarizer and a half-wave plate; the incident light is repeatedly switched on and off with the period of 20 seconds, and the duty ratio is 50 percent; when the incident light is closed, the half-wave plate is rotated; the optoelectronic device can be determined to have polarization characteristics when the oscilloscope displays a cosine-like pattern.
According to an embodiment of the present invention, adjusting the angle of the half-wave plate is used to change the polarization direction of the incident light. And irradiating polarized light in different directions onto the prepared photoelectric device, and measuring the change of light dark current generated by the photoelectric device to verify the polarization characteristic of the prepared photoelectric device.
According to the photoelectric device provided by the embodiment of the invention, because the GeSe two-dimensional material has in-plane anisotropy, the GeSe two-dimensional material can respond to the polarized light in the range of 360-1064 nm, and the photoelectric device prepared by adopting the GeSe two-dimensional material can detect the polarized light with the wavelength in the range of 360-1064 nm, so that the detection of a polarized light source with a wide spectrum is realized, and the application range of the photoelectric device is wider.
According to the photoelectric device provided by the embodiment of the invention, the heavily doped Ge metal is used as the substrate, so that the response current of photoelectric conversion of the photoelectric device can be improved.
According to the photoelectric device provided by the embodiment of the invention, the two-dimensional three-dimensional heterojunction structure is formed, and the built-in electric field is formed near the heterojunction interface, so that the generated photon-generated carriers are accelerated to be transmitted to the electrode, the photoresponse current of the photoelectric device can be further improved, and the detection capability of the polarized light with a wide spectrum is improved.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An optoelectronic device, comprising:
the substrate (1), the substrate (1) is Ge metal of P type heavy doping or N type heavy doping;
an insulating layer (2) formed on a part of the surface on the substrate (1) side;
a GeSe two-dimensional material layer (3) extending from a portion of the surface of the substrate (1) onto the insulating layer (2), the GeSe two-dimensional material layer (3) comprising at least one sheet of GeSe thin film configured to generate photo-generated carriers in response to light;
an electrode comprising at least one set of a source (4) and a drain (5) configured to receive the photogenerated carriers; the at least one group of source electrode (4) and drain electrode (5) are respectively formed on each GeSe thin film and on the opposite side of the substrate (1) to the GeSe two-dimensional material layer (3);
wherein the substrate (1) and the GeSe two-dimensional material layer (3) form a two-dimensional three-dimensional heterojunction.
2. The optoelectronic device according to claim 1, wherein the substrate (1) has a resistivity of less than 0.1 Ω -cm -1 ；
Preferably, the insulating layer (2) is silicon oxide or aluminum oxide.
3. The optoelectronic device according to claim 1, wherein the GeSe thin film is formed of a GeSe single crystal having in-plane anisotropy;
preferably, the GeSe thin film has a molar ratio of Ge to Se of 1: 1.
4. The optoelectronic device according to claim 1, wherein the GeSe two-dimensional material layer (3) has a thickness of 20-100 nm.
5. The optoelectronic device according to claim 1, wherein the material of the source (4) and the drain (5) is gold;
preferably, the thickness of the source electrode (4) is 30-60 nm;
the thickness of the drain electrode (5) is 30-60 nm.
6. A method of fabricating an optoelectronic device according to any one of claims 1 to 5, comprising:
forming an insulating layer (2) on one side of a substrate (1);
etching the insulating layer (2) to expose a part of the surface of the substrate (1);
transferring at least one GeSe thin film onto a part of the surface of the substrate (1); wherein the at least one GeSe thin film extends from part of the surface of the substrate (1) to the insulating layer (2);
forming a source electrode (4) on the at least one GeSe thin film;
and forming a drain electrode (5) corresponding to each source electrode (4) on the other side of the substrate (1).
7. The production method according to claim 6, characterized in that an insulating layer (2) is formed on one side of the substrate (1) by an atomic layer deposition technique or an ion beam sputtering technique;
and etching the insulating layer (2) by utilizing a photoetching technology and an inductive coupling plasma etching technology to expose part of the surface of the substrate (1).
8. The production method according to claim 6, wherein the GeSe thin film is obtained by mechanically exfoliating a GeSe crystal.
9. The production method according to claim 6, wherein the at least one GeSe thin film is transferred onto a portion of the surface of the substrate (1) by dry transfer.
10. The method according to claim 6, wherein forming a source electrode (4) on the at least one GeSe thin film comprises:
spin coating a polymethyl methacrylate layer on the at least one GeSe thin film;
etching the polymethyl methacrylate layer by using an electron beam evaporation technology to obtain a source electrode pattern groove;
evaporating metal to the source electrode pattern groove by using an electron beam evaporation technology;
and removing the polymethyl methacrylate layer outside the source electrode pattern groove by using a developing solution.
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