CN114975305A - Packaged gallium nitride power module integrating current temperature detection and electrostatic protection - Google Patents

Packaged gallium nitride power module integrating current temperature detection and electrostatic protection Download PDF

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Publication number
CN114975305A
CN114975305A CN202210437656.4A CN202210437656A CN114975305A CN 114975305 A CN114975305 A CN 114975305A CN 202210437656 A CN202210437656 A CN 202210437656A CN 114975305 A CN114975305 A CN 114975305A
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gallium nitride
power tube
module
wafer
electrostatic protection
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杜建霞
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Hangzhou Yuanxin Semiconductor Technology Co ltd
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Hangzhou Yuanxin Semiconductor Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • G01D21/02—Measuring two or more variables by means not covered by a single other subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T10/00—Road transport of goods or passengers
    • Y02T10/60—Other road transportation technologies with climate change mitigation effect
    • Y02T10/7072—Electromobility specific charging systems or methods for batteries, ultracapacitors, supercapacitors or double-layer capacitors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

The invention discloses a packaged gallium nitride power module integrating current temperature detection and electrostatic protection, which mainly comprises a gallium nitride power tube wafer and a silicon driving wafer, wherein the gallium nitride power tube wafer and the silicon driving wafer are fixed on a chip connecting frame in parallel through epoxy resin compounds, the gallium nitride power tube wafer and the silicon driving wafer are closely abutted together and are connected through copper or gold bonding wires, and meanwhile, the gallium nitride power tube wafer and the silicon driving wafer are respectively connected with the internal connecting frame of packaged pins through the bonding wires. The invention has the beneficial effects that: the invention has the advantages of adjustable driving strength and slope to reduce the electromagnetic interference characteristic of the system and improve the electric energy conversion efficiency, real-time temperature detection of the gallium nitride module to improve the reliability and safety of the electronic system, real-time current detection to realize cycle-by-cycle current loop control and overcurrent protection and improve the stability of the system.

Description

Packaged gallium nitride power module integrating current temperature detection and electrostatic protection
Technical Field
The invention relates to a gallium nitride power module, in particular to a packaged gallium nitride power module integrating current temperature detection and electrostatic protection.
Background
Compared with the traditional silicon, the gallium nitride third-generation semiconductor has wider band gap voltage and higher electron mobility, so that the gallium nitride power device has the advantages of high breakdown voltage, small switching loss, small conduction loss and small volume size. In the fields of electric automobiles, large data centers and consumer electronics, the gallium nitride power converter can greatly improve the electric energy conversion efficiency and reduce the heat dissipation cost, improve the switching frequency to reduce the size of a system scheme, and realize higher power to meet the requirements of quick charging of the electric automobiles and the consumer electronics. However, gallium nitride power also presents some challenges, such as gate breakdown susceptibility and electromagnetic interference.
Fig. 1 shows a conventional gan power converter circuit, which employs multiple chips, including a gan power tube (which may be replaced by a silicon high-voltage power tube and a silicon carbide power tube), a driving chip, a current detecting chip, a temperature detecting chip, an electrostatic protection chip, a resistor, a diode, and the like. The main working principle is that when the AC-DC controller or the DC-DC controller sends out PWM signals to turn on the gallium nitride switching tube, the driving chip receives the PWM signals and pulls up V through the driving circuit G To turn on the gan power transistor. Wherein the gate resistance R G The pull-up strength can be reduced and the gate V can be slowed down G The speed is switched on to reduce the electromagnetic interference of the system. And on the pull-down path, diode D G Can be substituted by R G The resistance is short-circuited, thereby realizing higher pull-down speed and controlling the grid V when the drain end of the gallium nitride power tube rises G The coupling voltage of (c). As shown in fig. 1, the conventional current detection uses a resistor R SNS And a gallium nitride power transistor (M) HV ) In series connection, and further processing the detected signal by filtering to generate a voltage signal V containing current information ISNS On the other hand, the traditional temperature detection adopts the mode of an external temperature detection chip to detect the temperature of the gallium nitride chip and the system and detect the temperature information V TSNS And feeding back to an AC-DC or DC-DC controller to realize protection of the gallium nitride power tube and the system so as to prevent over-temperature and fire. In addition, an off-chip electrostatic protection (ESD) circuit can protect gallium nitride and other electronic devices and avoid damage of the devices caused by electrostatic discharge.
However, the technical difficulties of the conventional gan converter include large package size, large impedance, weak current capability, and poor heat dissipation, inaccurate temperature and current detection or huge ringing caused by the adoption of a plurality of chips having long parasitic parameters, how to adopt an intelligent driving technology to reduce electromagnetic interference and improve power conversion efficiency, and how to quickly and accurately detect current and temperature, and how to adopt an effective gan electrostatic protection technology. Thus, challenges facing conventional multi-chip assembled gallium nitride converters include:
1. the electromagnetic interference caused by the over-fast driving of gallium nitride and the extremely low electric energy efficiency caused by the over-slow driving of gallium nitride;
2. the current detection speed is too slow and the working frequency and the loop stability of the system are not limited accurately;
3. the safety of the system is affected by inaccurate temperature detection;
4. failure of no or electrostatic protection results in damage to the gallium nitride device and the gate.
If the problems are not solved or optimally designed, the safety problems of low electric energy efficiency, large electromagnetic interference, unstable system operation, poor current capability, system overheating and the like of the gallium nitride converter can be caused.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a packaged gallium nitride power module integrating current temperature detection and electrostatic protection.
The object of the present invention is achieved by the following technical means. A packaged gallium nitride power module integrating current temperature detection and electrostatic protection mainly comprises a gallium nitride power tube wafer and a silicon driving wafer, wherein the gallium nitride power tube wafer and the silicon driving wafer are fixed on a chip connecting frame in parallel through epoxy resin compounds, the gallium nitride power tube wafer and the silicon driving wafer are close to each other and are connected through copper or gold bonding wires, and meanwhile, the gallium nitride power tube wafer and the silicon driving wafer are respectively connected with a packaged pin internal connecting frame through the bonding wires.
Furthermore, the silicon driving wafer comprises an integrated temperature detection module, a primary clamping and electrostatic protection module, an integrated driving strength control circuit module and an integrated current detection module; the gallium nitride power tube wafer comprises a gallium nitride power tube, a secondary clamping and electrostatic protection module, a gallium nitride temperature detection matching power tube and a gallium nitride current detection matching power tube; wherein the content of the first and second substances,
the integrated driving strength control circuit module is used for controlling the switching-on speed of the gallium nitride power tube and the falling slope dv/dt of the drain end of the gallium nitride power tube; v of integrated drive strength control circuit module PWM End connected to a controller, V DRV V of end and gallium nitride power tube G End to end connected, V DSS The end is connected with the Vs end of the gallium nitride power tube; v DRV Terminal and V G Terminal, V DSS The end is connected with the Vs end through a bonding wire;
the integrated temperature detection module outputs PWM waveforms with different duty ratios and frequencies based on the temperature value, detects the temperature of the gallium nitride power tube wafer and protects the gallium nitride power tube wafer; v of integrated temperature detection module TSNS End connected to a controller, V N V of end and gallium nitride temperature detection matching power tube XTSNS End connection, gallium nitride temperature detection matching power tube connected with gallium nitride power tube for temperature matching and detection, V N Terminal and V XTSNS The ends are connected through a bonding wire;
the integrated current detection module is used for detecting the current flowing from the drain terminal D to the source terminal S of the gallium nitride power tube; v of integrated current detection module AP V of power tube matched with gallium nitride current detection terminal XD End to end connected, V AN V of power tube matched with end and gallium nitride current detection XS Are connected with each other; v AP Terminal and V XD Terminal, V AN Terminal and V XS The ends are connected through a bonding wire;
the primary clamping and electrostatic protection module and the secondary clamping and electrostatic protection module form a two-stage clamping circuit and electrostatic protection framework, and are used for providing bidirectional voltage clamping and electrostatic protection from a grid electrode to a source electrode and controlling the voltage from the grid electrode to the source electrode within a certain range; wherein the primary clamping and electrostatic protection module passes V DRV V of terminal and two-stage clamping and electrostatic protection module G Are communicated with each other throughV DSS The terminals are communicated with the Vs terminals of the secondary clamping and electrostatic protection module.
Furthermore, the integrated driving intensity control circuit module controls the driving intensity in a source resistance modulation mode, and when the gallium nitride power tube is switched on, V is PWM The PWM input signal of the terminal is changed from low level to high level and is controlled by non-overlapping time to turn on the pull-up PMOS tube M of the last stage P (ii) a Only when PMOS transistor M P After turn-off, the gate voltage V GP Is detected to determine that it has been turned off, and then pulls V high GN To turn on the NMOS transistor M N By external regulation of R G The magnitude of the resistance changes the driving strength and the pull-up capability of the gallium nitride power tube grid electrode.
Furthermore, the integrated temperature detection module adopts a mode V of generating a PWM waveform related to temperature PWMOUT And the higher the temperature is, the higher the frequency of the output PWM is, the larger the duty ratio of the PWM is, and the system can accurately determine the temperature of the module by monitoring the output PWM signal and the duty ratio.
Furthermore, the integrated current detection module detects a voltage signal related to the current as: v ISNS ＝K×R ISNS ×I DS N by detection of I DS And is reflected in the detected V with an extremely low delay ISNS And on the voltage, the high-speed and high-precision detection of the current of the gallium nitride power tube is realized.
Furthermore, the clamping and electrostatic protection module of the silicon drive wafer is used for realizing bidirectional voltage clamping primary protection from the grid electrode to the source electrode of the gallium nitride power tube, and the secondary clamping and electrostatic protection module and the current limiting resistor R are added on the gallium nitride power tube wafer LM Thereby realizing the bidirectional voltage clamping diode protection from the grid electrode to the source electrode inside the gallium nitride power chip.
The invention has the beneficial effects that: the invention has the advantages of adjustable driving strength and slope to reduce the electromagnetic interference characteristic of the system and improve the electric energy conversion efficiency, real-time temperature detection of the gallium nitride module to improve the reliability and safety of the electronic system, and real-time current detection to realize cycle-by-cycle current loop control and overcurrent protection and improve the stability of the system. The circuit can greatly improve the switching frequency to reduce the size of a system scheme, improve the electric energy conversion efficiency and reduce the electromagnetic interference of the system, and improve the reliability and the stability of the system to meet the application requirements of high-performance consumer electronics products, electric automobiles and data center power systems in the application fields of alternating current-direct current (AC-DC) converters, direct current-direct current (DC-DC) converters, alternating current-alternating current (AC-AC) converters and the like, particularly in the application field of high-voltage and high-current gallium nitride. Effectively overcoming the problems and challenges of conventional gallium nitride devices and power converters. These gallium nitride converter technologies can also be applied to Silicon field effect transistor Silicon MOSFET converters, Silicon carbide field effect transistor SiC MOSFETs, and Silicon carbide nodal field effect transistor SiC JFET converters, and achieve miniaturization of electronic systems through higher operating frequencies.
Drawings
FIG. 1 is a diagram of a conventional GaN driver circuit and a method for detecting off-chip current and temperature;
FIG. 2 is a schematic diagram of an integrated GaN power module using advanced packaging according to the invention;
FIG. 3 is a schematic diagram of the general structure of an integrated GaN power module using advanced packaging according to the present invention;
FIG. 4 is a schematic diagram of a GaN integrated drive strength control circuit module;
FIG. 5 is a schematic diagram of a gallium nitride integrated temperature detection module;
FIG. 6 is a schematic diagram of a gallium nitride integrated current detection module;
fig. 7 is a schematic diagram of the clamping and electrostatic protection principle of the integrated gate voltage of gan.
Detailed Description
The invention will be described in detail with reference to the following figures and examples:
the invention provides a packaged gallium nitride power module integrating current temperature detection and electrostatic protection, which adopts an advanced packaging technology to realize integrated drive control, temperature and current detection of a single packaged chip, as shown in figure 2. The invention adopts a multi-chip heterogeneous integration mode, and comprises a silicon driving wafer (the left part of a figure 2) and a gallium nitride power tube wafer (the right part of the figure 2). The silicon driving wafer comprises an integrated temperature detection module, a primary clamping and electrostatic protection module, an integrated driving strength control circuit module and an integrated current detection module; the gallium nitride power tube wafer comprises a gallium nitride power tube, a secondary clamping and electrostatic protection module, a gallium nitride temperature detection matching power tube and a gallium nitride current detection matching power tube.
The present invention proposes an advanced packaging method of a gan power module using parallel chip bonding wires, as shown in fig. 3. The invention utilizes copper wires or gold wires to package and connect the silicon driving wafer and the gallium nitride power tube wafer, and realizes the heterogeneous sealing of the gallium nitride power tube wafer and the silicon driving wafer, thereby reducing the size of the gallium nitride power module, the parasitic resistance and the inductance of the system, improving the overall current capacity of the module, improving the detection speed and the precision of the current and the temperature, and realizing the effective electrostatic protection.
The parallel Die bonding wire is formed by fixing a gallium nitride power transistor wafer (Die) and a silicon driver wafer (Die) in parallel on a Die Attach Paddle (DAP) via an epoxy compound. And then, connecting the gallium nitride power tube wafer and the silicon driving wafer by adopting a copper or gold bonding wire, and simultaneously connecting the gallium nitride power tube wafer and the silicon driving wafer with the pin internal connection frame of the package by utilizing the bonding wire. The heterogeneous packaging mode can greatly reduce the packaging size of the gallium nitride power module to realize higher power density, and is suitable for application scenes of power supply chips of large data centers.
Specifically, the invention provides a drive detection and electrostatic protection technology based on advanced packaging heterogeneous integration, and provides four-point design invention.
1. Gallium nitride integrated drive strength control technique
The invention provides an integrated driving strength control circuit module and a source resistance modulation circuit implementation method, and as shown in fig. 4, V of the integrated driving strength control circuit module PWM End connected to a controller, V DRV Terminal and gallium nitrideV of power tube G End to end connected, V DSS The end is connected with the Vs end of the gallium nitride power tube; v DRV Terminal and V G Terminal, V DSS The terminal is connected with the Vs terminal through a bonding wire. The driving strength control circuit can effectively control the turn-on speed of the gallium nitride power tube and the falling slope dv/dt of the gallium nitride drain terminal, effectively reduce the electromagnetic interference of a system and optimize the electric energy efficiency of the gallium nitride converter. The working principle of the source resistance modulation type driving strength control technology is described in detail below. The source resistance modulation circuit is shown in FIG. 4, in which the resistor R G Can be externally connected or internally arranged, and the equivalent resistance of the PMOS tube for driving the pull-up of the last stage is R P1 . When the gallium nitride power tube is switched on, the PWM input signal is changed from low level to high level and is controlled by non-overlapping time to switch on the pull-up PMOS tube M of the last stage P . The control principle of non-overlapping dead time is that only the PMOS transistor M P After turn-off, the gate voltage V GP Is detected to determine that it has been turned off, and then pulls V high GN To turn on the NMOS transistor M N Thereby preventing M P And M N And the simultaneous turn-on causes a drive short. Therefore, the equivalent total pull-up resistance driving the last stage is: r G +R P The smaller the pull-up resistance, the stronger the pull-up drive, the faster the gallium nitride gate voltage rises and the faster the gallium nitride power tube turns on. The circuit can adjust R through the outside G The magnitude of the resistance changes the drive strength and pull-up capability of the gate. When R is G The larger the driving capability is, the longer the gate opening process is, and the lower the slope dv/dt of the drain terminal when the gallium nitride is opened is, so as to reduce the electromagnetic interference of the system. On the contrary, if R G The smaller the driving capability is, the enhanced driving capability is, the shorter the gate turn-on process is, the faster the slope dv/dt of the drain terminal drop when the gallium nitride is turned on becomes, the switching loss of the system can be reduced, but the faster dv/dt and the transient current bring the problem of electromagnetic interference. Different systems will select different R G The power conversion efficiency and the electromagnetic interference of the system are optimized.
2. Gallium nitride integrated high-precision temperature detection technology
The invention provides gallium nitride integrationThe temperature detection module also provides an implementation method, and PWM waveforms with different duty ratios and frequencies are output based on temperature. The output PWM waveform mode can be applied to an isolated converter. The temperature detection circuit is integrated on the silicon drive wafer and the gallium nitride power tube wafer, and can detect the temperature of the gallium nitride power tube wafer with high precision and effectiveness and protect the gallium nitride power tube wafer, thereby ensuring the safety of an electronic system. V of integrated temperature detection module TSNS End connected to a controller, V N V of end and gallium nitride temperature detection matching power tube XTSNS The end is connected, and the gallium nitride temperature detection matching power tube is connected with the gallium nitride power tube for temperature matching and detection.
The temperature detection techniques and the working principles of the implementation are further described below. FIG. 5 illustrates a method V for generating a temperature-dependent PWM waveform PWMOUT The higher the temperature, the higher the frequency of the output PWM and the larger the duty cycle of the PWM. Wherein V N Is composed of two or more stacked gallium nitride temperature-detecting power transistors and has a forward on-state voltage V XTSNS V increases with increasing temperature XTSNS And V N Connected by bonding wires, so V N Has a positive temperature coefficient. And the other end has a fixed current source I CON Charging a capacitor with constant current when charging voltage V P To V N At a constant time delay t DLY Then discharging the capacitor to reset V P The voltage of (c). The lower the temperature of the chip or system, the lower V N The lower, V P Charging to V N The shorter the time required, and the time delay t DLY Is fixed thereby V PWMOUT The higher the frequency of the output, the smaller the duty cycle. Conversely, when the temperature of the chip or system increases, V N Is raised, then V PWMOUT The lower the frequency of the output, the larger the duty cycle. Therefore, the circuit can detect the temperature of a chip or a system and output a PWM waveform related to the temperature, and has great application prospect in isolated power supplies of automobiles and data centers.
3. Gallium nitride integrated high-speed high-precision current detection technology
The invention provides a gallium nitride integrated high-speed and high-precision current detection technology, can realize the current detection of a gallium nitride power tube, realizes the current detection from a drain terminal (D) to a source terminal (S) as shown in figure 6, and integrates a V of a current detection module AP V of power tube matched with end and gallium nitride current detection XD End to end connected, V AN V of power tube matched with gallium nitride current detection terminal XS Connected with each other. The invention adopts the mode that the gallium nitride power tube and the gallium nitride are matched with the power tube, and adopts the high-speed and high-precision operational amplifier circuit to realize the quick and accurate detection of the current.
The working principle of the current detection is explained below, where M HV Is a gallium nitride main power tube, M D Matching the power transistor with the drain terminal gallium nitride, and M S Is a source end gallium nitride matching power tube. V of silicon drive wafer by way of bonding wire monomer integrated packaging AP And V AN V of terminal is connected to GaN wafer XD And V XS Are connected. Wherein M is D And M S Size of main power tube M only HV 1/N of (i) so that M S On-resistance of M HV N times. By using the principle that the voltages at two input ends of the high-speed high-precision operational amplifier are equal, the gallium nitride matching tube M S And a main gallium nitride power tube M HV Having the same drain-source voltage V DS . Due to M S On-resistance of M HV N times of then flows through M S Is passed through the main power tube M HV one-N of (1): i is DS The current P-type current mirror is amplified by K times and injected into an externally connected resistor. Therefore, the detected voltage signal related to the current is: v ISNS ＝K×R ISNS ×I DS and/N. Since the current signal usually changes rapidly with a certain slope, the high-speed high-precision operational amplifier can rapidly detect I DS And is reflected in the detected V with extremely low delay ISNS And on the voltage, the high-speed and high-precision detection of the current of the gallium nitride power tube is realized.
4. Integrated gate voltage clamping and electrostatic protection techniques
The invention provides two levels of integrated grid voltage clamping and electrostatic protection technology, can realize two levels of grid-to-source bidirectional voltage clamping and electrostatic protection on a silicon driving wafer and a gallium nitride power tube wafer, and prevents a P-type gallium nitride grid of a gallium nitride device from being damaged due to forward or reverse overvoltage, thereby improving the reliability of the gallium nitride device and a system.
In a conventional enhanced gallium nitride High Electron Mobility Transistor (HEMT), a parasitic schottky barrier diode is generated due to a structure from P-type gallium nitride (pGaN) to gallium aluminum nitride (AlGaN) to a gate thereof, and can clamp a forward overvoltage from the gate to a source. However, due to the weak current capability of the P-type gan gate schottky barrier diode, the gan device is permanently damaged by the instantaneous overvoltage or large current of the gate.
As shown in fig. 7, the present invention provides a novel clamping circuit and electrostatic protection architecture with a total of two stages: on one hand, the primary clamping and electrostatic protection module of the silicon driving wafer is utilized to realize the bidirectional voltage clamping primary protection from the grid electrode to the source electrode of the gallium nitride transistor. Meanwhile, a secondary clamping and electrostatic protection module and a current limiting resistor R are added on a gallium nitride power tube chip LM Thereby realizing the bidirectional voltage clamping dipolar protection from the grid electrode to the source electrode inside the gallium nitride power tube wafer. Due to the adoption of the bonding wire monomer integrated packaging mode, the silicon driving wafer and the gallium nitride power tube wafer can realize effective connection and low parasitic resistance inductance, and the mode can effectively protect the grid electrode of the gallium nitride power tube and prevent the grid electrode of the gallium nitride power tube from being lost in the application and test processes. By using the method, primary protection is realized on the silicon driving wafer, and secondary protection is realized on the gallium nitride power tube wafer, so that the reliability and stability of the gallium nitride device can be effectively improved, and the requirements of electric automobiles, large data centers and consumer electronics on high reliability and safety of the gallium nitride device are met.
It should be understood that equivalent substitutions and changes to the technical solution and the inventive concept of the present invention should be made by those skilled in the art to the protection scope of the appended claims.

Claims (6)

1. A packaged gallium nitride power module integrating current temperature detection and electrostatic protection is characterized in that: the packaging structure mainly comprises a gallium nitride power tube wafer and a silicon driving wafer, wherein the gallium nitride power tube wafer and the silicon driving wafer are fixed on a chip connecting frame in parallel through epoxy resin compounds, the gallium nitride power tube wafer and the silicon driving wafer are close to each other and are connected through copper or gold bonding wires, and meanwhile, the gallium nitride power tube wafer and the silicon driving wafer are respectively connected with a pin internal connecting frame of a package through the bonding wires.
2. The packaged gan power module with integrated current temperature sensing and esd protection of claim 1, wherein: the silicon driving wafer comprises an integrated temperature detection module, a primary clamping and electrostatic protection module, an integrated driving strength control circuit module and an integrated current detection module; the gallium nitride power tube wafer comprises a gallium nitride power tube, a secondary clamping and electrostatic protection module, a gallium nitride temperature detection matching power tube and a gallium nitride current detection matching power tube; wherein the content of the first and second substances,
the integrated driving strength control circuit module is used for controlling the switching-on speed of the gallium nitride power tube and the falling slope dv/dt of the drain end of the gallium nitride power tube; v of integrated drive strength control circuit module PWM End connected to a controller, V DRV V of end and gallium nitride power tube G End to end connected, V DSS The end is connected with the Vs end of the gallium nitride power tube; v DRV Terminal and V G Terminal, V DSS The end is connected with the Vs end through a bonding wire;
the integrated temperature detection module outputs PWM waveforms with different duty ratios and frequencies based on the temperature value, detects the temperature of the gallium nitride power tube wafer and protects the gallium nitride power tube wafer; v of integrated temperature detection module TSNS End connected to a controller, V N V of end and gallium nitride temperature detection matching power tube XTSNS End connection, the gallium nitride temperature detection matching power tube is connected with the gallium nitride power tube for temperature matching and detection, V N Terminal and V XTSNS End through bondingWire connection;
the integrated current detection module is used for detecting the current flowing from the drain end D to the source end S of the gallium nitride power tube; v of integrated current detection module AP V of power tube matched with gallium nitride current detection terminal XD End to end connected, V AN V of power tube matched with gallium nitride current detection terminal XS Are connected with each other; v AP Terminal and V XD Terminal, V AN Terminal and V XS The ends are connected through a bonding wire;
the primary clamping and electrostatic protection module and the secondary clamping and electrostatic protection module form a two-stage clamping circuit and electrostatic protection framework, and are used for providing bidirectional voltage clamping and electrostatic protection from a grid electrode to a source electrode and controlling the voltage from the grid electrode to the source electrode within a certain range; wherein the primary clamping and electrostatic protection module passes V DRV V of terminal and two-stage clamping and electrostatic protection module G Are communicated with each other through V DSS The terminals are communicated with the Vs terminals of the secondary clamping and electrostatic protection module.
3. The packaged gan power module with integrated current temperature sensing and electrostatic protection of claim 2, wherein: the integrated drive intensity control circuit module controls drive intensity in a source electrode resistance modulation mode, and when the gallium nitride power tube is switched on, V is PWM The PWM input signal at the end is changed from low level to high level and is controlled by non-overlapping time to turn on the pull-up PMOS tube M at the last stage P (ii) a Only when PMOS transistor M P After turn-off, the gate voltage V GP Is detected to determine that it has been turned off, and then pulls V high GN To turn on the NMOS transistor M N By external regulation of R G The magnitude of the resistance changes the driving strength and the pull-up capability of the gallium nitride power tube grid electrode.
4. The packaged gan power module with integrated current temperature sensing and electrostatic protection of claim 2, wherein: the integrated temperature detection module adopts a mode V of generating a PWM waveform related to temperature PWMOUT The higher the temperature, the higher the frequency of the output PWMThe higher the duty cycle of the PWM, the more accurate the temperature of the module is determined by monitoring the output PWM signal and the duty cycle.
5. The packaged gan power module with integrated current temperature sensing and electrostatic protection of claim 2, wherein: the integrated current detection module detects voltage signals related to the current as follows: v ISNS ＝K×R ISNS ×I DS N by detection of I DS And is reflected in the detected V with an extremely low delay ISNS And on the voltage, the high-speed and high-precision detection of the current of the gallium nitride power tube is realized.
6. The packaged gan power module with integrated current temperature sensing and electrostatic protection of claim 2, wherein: the clamping and electrostatic protection module of the silicon drive wafer is used for realizing the bidirectional voltage clamping primary protection from the grid electrode to the source electrode of the gallium nitride power tube, and the secondary clamping and electrostatic protection module and the current-limiting resistor R are added on the gallium nitride power tube wafer LM Thereby realizing the bidirectional voltage clamping diode protection from the grid electrode to the source electrode inside the gallium nitride power chip.
CN202210437656.4A 2022-04-25 2022-04-25 Packaged gallium nitride power module integrating current temperature detection and electrostatic protection Pending CN114975305A (en)

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